1
|
Guo Z, Wang J, Malinowski G, Zhang B, Zhang W, Wang H, Lyu C, Peng Y, Vallobra P, Xu Y, Xu Y, Jenkins S, Chantrell RW, Evans RFL, Mangin S, Zhao W, Hehn M. Single-Shot Laser-Induced Switching of an Exchange Biased Antiferromagnet. Adv Mater 2024:e2311643. [PMID: 38407359 DOI: 10.1002/adma.202311643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 02/09/2024] [Indexed: 02/27/2024]
Abstract
Ultrafast manipulation of magnetic order has challenged the understanding of the fundamental and dynamic properties of magnetic materials. So far single-shot magnetic switching has been limited to ferrimagnetic alloys, multilayers, and designed ferromagnetic (FM) heterostructures. In FM/antiferromagnetic (AFM) bilayers, exchange bias (He ) arises from the interfacial exchange coupling between the two layers and reflects the microscopic orientation of the antiferromagnet. Here the possibility of single-shot switching of the antiferromagnet (change of the sign and amplitude of He ) with a single femtosecond laser pulse in IrMn/CoGd bilayers is demonstrated. The manipulation is demonstrated in a wide range of fluences for different layer thicknesses and compositions. Atomistic simulations predict ultrafast switching and recovery of the AFM magnetization on a timescale of 2 ps. The results provide the fastest and the most energy-efficient method to set the exchange bias and pave the way to potential applications for ultrafast spintronic devices.
Collapse
Affiliation(s)
- Zongxia Guo
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing, 100191, China
- Institut Jean Lamour, UMR CNRS, Université de Lorraine, Nancy, 54011, France
| | - Junlin Wang
- School of Integrated Circuits, Guangdong University of Technology, Guangdong, 510006, China
| | - Gregory Malinowski
- Institut Jean Lamour, UMR CNRS, Université de Lorraine, Nancy, 54011, France
| | - Boyu Zhang
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing, 100191, China
| | - Wei Zhang
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing, 100191, China
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, Hefei, 230012, China
| | - Hangtian Wang
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing, 100191, China
- Institut Jean Lamour, UMR CNRS, Université de Lorraine, Nancy, 54011, France
| | - Chen Lyu
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing, 100191, China
- Institut Jean Lamour, UMR CNRS, Université de Lorraine, Nancy, 54011, France
| | - Yi Peng
- Institut Jean Lamour, UMR CNRS, Université de Lorraine, Nancy, 54011, France
| | - Pierre Vallobra
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing, 100191, China
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, Hefei, 230012, China
| | - Yong Xu
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing, 100191, China
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, Hefei, 230012, China
| | - Yongbing Xu
- School of Integrated Circuits, Guangdong University of Technology, Guangdong, 510006, China
- School of Physics, Engineering and Technology, University of York, York, YO105DD, UK
| | - Sarah Jenkins
- School of Physics, Engineering and Technology, University of York, York, YO105DD, UK
| | - Roy W Chantrell
- School of Physics, Engineering and Technology, University of York, York, YO105DD, UK
| | - Richard F L Evans
- School of Physics, Engineering and Technology, University of York, York, YO105DD, UK
| | - Stéphane Mangin
- Institut Jean Lamour, UMR CNRS, Université de Lorraine, Nancy, 54011, France
| | - Weisheng Zhao
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing, 100191, China
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, Hefei, 230012, China
| | - Michel Hehn
- Institut Jean Lamour, UMR CNRS, Université de Lorraine, Nancy, 54011, France
| |
Collapse
|
2
|
Liu J, Marquez M, Lai Y, Ibrahim H, Légaré K, Lassonde P, Liu X, Hehn M, Mangin S, Malinowski G, Li Z, Légaré F, Liang J. Swept coded aperture real-time femtophotography. Nat Commun 2024; 15:1589. [PMID: 38383494 PMCID: PMC10882056 DOI: 10.1038/s41467-024-45820-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Accepted: 01/31/2024] [Indexed: 02/23/2024] Open
Abstract
Single-shot real-time femtophotography is indispensable for imaging ultrafast dynamics during their times of occurrence. Despite their advantages over conventional multi-shot approaches, existing techniques confront restricted imaging speed or degraded data quality by the deployed optoelectronic devices and face challenges in the application scope and acquisition accuracy. They are also hindered by the limitations in the acquirable information imposed by the sensing models. Here, we overcome these challenges by developing swept coded aperture real-time femtophotography (SCARF). This computational imaging modality enables all-optical ultrafast sweeping of a static coded aperture during the recording of an ultrafast event, bringing full-sequence encoding of up to 156.3 THz to every pixel on a CCD camera. We demonstrate SCARF's single-shot ultrafast imaging ability at tunable frame rates and spatial scales in both reflection and transmission modes. Using SCARF, we image ultrafast absorption in a semiconductor and ultrafast demagnetization of a metal alloy.
Collapse
Affiliation(s)
- Jingdan Liu
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Québec, J3X1P7, Canada
- Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Miguel Marquez
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Québec, J3X1P7, Canada
| | - Yingming Lai
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Québec, J3X1P7, Canada
| | - Heide Ibrahim
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Québec, J3X1P7, Canada
| | - Katherine Légaré
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Québec, J3X1P7, Canada
| | - Philippe Lassonde
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Québec, J3X1P7, Canada
| | - Xianglei Liu
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Québec, J3X1P7, Canada
| | - Michel Hehn
- Institut Jean Lamour, Université de Lorraine, Parc de Saurupt CS 50840, Nancy, 54011, France
| | - Stéphane Mangin
- Institut Jean Lamour, Université de Lorraine, Parc de Saurupt CS 50840, Nancy, 54011, France
| | - Grégory Malinowski
- Institut Jean Lamour, Université de Lorraine, Parc de Saurupt CS 50840, Nancy, 54011, France
| | - Zhengyan Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, China
| | - François Légaré
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Québec, J3X1P7, Canada
| | - Jinyang Liang
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Université du Québec, 1650 boulevard Lionel-Boulet, Varennes, Québec, J3X1P7, Canada.
| |
Collapse
|
3
|
Peng Y, Salomoni D, Malinowski G, Zhang W, Hohlfeld J, Buda-Prejbeanu LD, Gorchon J, Vergès M, Lin JX, Lacour D, Sousa RC, Prejbeanu IL, Mangin S, Hehn M. In-plane reorientation induced single laser pulse magnetization reversal. Nat Commun 2023; 14:5000. [PMID: 37591992 PMCID: PMC10435580 DOI: 10.1038/s41467-023-40721-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 08/08/2023] [Indexed: 08/19/2023] Open
Abstract
Single Pulse All Optical Switching represents the ability to reverse the magnetization of a nanostructure using a femtosecond single laser pulse without any applied field. Since the first switching experiments carried out on GdFeCo ferrimagnets, this phenomena has been only recently extended to a few other materials, MnRuGa alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse switching can be obtained for a large range of rare earth-transition metal multilayers, making this phenomenon much more general. Surprisingly, the threshold fluence for switching is observed to be independent of the laser pulse duration. Moreover, at high laser intensities, concentric ring domain structures are induced. These striking features contrast to those observed in Gd based materials pointing towards a different reversal mechanism. Concomitant with the demonstration of an in-plane magnetization reorientation, a precessional reversal mechanism explains all the observed features.
Collapse
Affiliation(s)
- Y Peng
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - D Salomoni
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - G Malinowski
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France.
| | - W Zhang
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, 230013, Hefei, China
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, China
| | - J Hohlfeld
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - L D Buda-Prejbeanu
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - J Gorchon
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - M Vergès
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - J X Lin
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - D Lacour
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - R C Sousa
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - I L Prejbeanu
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - S Mangin
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - M Hehn
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France.
| |
Collapse
|
4
|
Kurnosikov O, Sicot M, Gaudry E, Pierre D, Lu Y, Mangin S. Bringing ultimate depth to scanning tunnelling microscopy: deep subsurface vision of buried nano-objects in metals. Nanoscale Horiz 2023. [PMID: 37140260 DOI: 10.1039/d3nh00052d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
A method for subsurface visualization and characterization of hidden subsurface nano-structures based on scanning tunelling microscopy/spectroscopy (STM/STS) has been developed. Nano-objects buried under a metal surface up to several tens of nanometers can be visualized through the metal surface and characterized with STM without destroying the sample. This non-destructive method exploits quantum well (QW) states formed by partial electron confinement between the surface and buried nano-objects. The specificity of STM allows for nano-objects to be singled out and easily accessed. Their burial depth can be determined by analysing the oscillatory behaviour of the electron density at the surface of the sample, while the spatial distribution of electron density can give additional information about their size and shape. The proof of concept was demonstrated with different materials such as Cu, Fe, and W in which the nanoclusters of Ar, H, Fe and Co were buried. For each material, the maximal depth of subsurface visualisation is determined by the material parameters and ranges from several nanometers to several tens of nanometers. To demonstrate the ultimate depth of subsurface STM-vision as the principal limit of our approach, the system of Ar nanoclusters embedded into a single-crystalline Cu(110) matrix has been chosen since it represents the best combination of the mean free path, smooth interface and inner electron focusing. With this system we experimentally demonstrated that Ar nanoclusters of several nanometers large buried as deep as 80 nm can still be detected, characterized and imaged. The ultimate depth of this ability is estimated to be 110 nm. This approach using QW states paves the way for enhanced 3D characterization of nanostructures hidden well below a metallic surface.
Collapse
Affiliation(s)
| | - Muriel Sicot
- Université de Lorraine, Institute Jean Lamour, France.
| | - Emilie Gaudry
- Université de Lorraine, Institute Jean Lamour, France.
| | | | - Yuan Lu
- Université de Lorraine, Institute Jean Lamour, France.
| | | |
Collapse
|
5
|
Wang H, Lu H, Guo Z, Li A, Wu P, Li J, Xie W, Sun Z, Li P, Damas H, Friedel AM, Migot S, Ghanbaja J, Moreau L, Fagot-Revurat Y, Petit-Watelot S, Hauet T, Robertson J, Mangin S, Zhao W, Nie T. Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe 4GeTe 2 far above room temperature. Nat Commun 2023; 14:2483. [PMID: 37120587 PMCID: PMC10148834 DOI: 10.1038/s41467-023-37917-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2022] [Accepted: 04/05/2023] [Indexed: 05/01/2023] Open
Abstract
Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.
Collapse
Affiliation(s)
- Hangtian Wang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - Haichang Lu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
- Engineering Department, Cambridge University, Cambridge, CB2 1PZ, UK.
| | - Zongxia Guo
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - Ang Li
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Peichen Wu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Jing Li
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Weiran Xie
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhimei Sun
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Peng Li
- Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, USA
| | - Héloïse Damas
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - Anna Maria Friedel
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
- Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663, Kaiserslautern, Germany
| | - Sylvie Migot
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - Jaafar Ghanbaja
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - Luc Moreau
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | | | | | - Thomas Hauet
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France
| | - John Robertson
- Engineering Department, Cambridge University, Cambridge, CB2 1PZ, UK
| | - Stéphane Mangin
- Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
| | - Weisheng Zhao
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
| | - Tianxiao Nie
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
| |
Collapse
|
6
|
Igarashi J, Zhang W, Remy Q, Díaz E, Lin JX, Hohlfeld J, Hehn M, Mangin S, Gorchon J, Malinowski G. Optically induced ultrafast magnetization switching in ferromagnetic spin valves. Nat Mater 2023:10.1038/s41563-023-01499-z. [PMID: 36894773 DOI: 10.1038/s41563-023-01499-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2022] [Accepted: 02/06/2023] [Indexed: 05/07/2023]
Abstract
The discovery of spin-transfer torque (STT) enabled the control of the magnetization direction in magnetic devices in nanoseconds using an electrical current. Ultrashort optical pulses have also been used to manipulate the magnetization of ferrimagnets at picosecond timescales by bringing the system out of equilibrium. So far, these methods of magnetization manipulation have mostly been developed independently within the fields of spintronics and ultrafast magnetism. Here we show optically induced ultrafast magnetization reversal taking place within less than a picosecond in rare-earth-free archetypal spin valves of [Pt/Co]/Cu/[Co/Pt] commonly used for current-induced STT switching. We find that the magnetization of the free layer can be switched from a parallel to an antiparallel alignment, as in STT, indicating the presence of an unexpected, intense and ultrafast source of opposite angular momentum in our structures. Our findings provide a route to ultrafast magnetization control by bridging concepts from spintronics and ultrafast magnetism.
Collapse
Affiliation(s)
| | - Wei Zhang
- Université de Lorraine, CNRS, IJL, Nancy, France
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, Hefei, China
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Quentin Remy
- Université de Lorraine, CNRS, IJL, Nancy, France
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Eva Díaz
- Université de Lorraine, CNRS, IJL, Nancy, France
| | - Jun-Xiao Lin
- Université de Lorraine, CNRS, IJL, Nancy, France
| | | | - Michel Hehn
- Université de Lorraine, CNRS, IJL, Nancy, France
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan
| | - Stéphane Mangin
- Université de Lorraine, CNRS, IJL, Nancy, France
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan
| | - Jon Gorchon
- Université de Lorraine, CNRS, IJL, Nancy, France.
| | | |
Collapse
|
7
|
Vergès M, Perumbilavil S, Hohlfeld J, Freire‐Fernández F, Le Guen Y, Kuznetsov N, Montaigne F, Malinowski G, Lacour D, Hehn M, van Dijken S, Mangin S. Energy Efficient Single Pulse Switching of [Co/Gd/Pt] N Nanodisks Using Surface Lattice Resonances. Adv Sci (Weinh) 2023; 10:e2204683. [PMID: 36507620 PMCID: PMC9896076 DOI: 10.1002/advs.202204683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Revised: 11/18/2022] [Indexed: 06/18/2023]
Abstract
The impact of plasmonic surface lattice resonances on the magneto-optical properties and energy absorption efficiency has been studied in arrays of [Co/Gd/Pt]N multilayer nanodisks. Varying the light wavelength, the disk diameter, and the period of the array, it is demonstrated that surface lattice resonances allow all-optical single pulse switching of [Co/Gd/Pt]N nanodisk arrays with an energy 400% smaller than the energy needed to switch a continuous [Co/Gd/Pt]N film. Moreover, the magneto-optical Faraday effect is enhanced at the resonance condition by up to 5,000%. The influence of the disk diameter and array period on the amplitude, width and position of the surface lattice resonances is in qualitative agreement with theoretical calculations and opens the way to designing magnetic metasurfaces for all-optical magnetization switching applications.
Collapse
Affiliation(s)
- Maxime Vergès
- Université de LorraineInstitut Jean LamourUMR CNRS 7198Nancy54011France
| | - Sreekanth Perumbilavil
- Department of Applied PhysicsAalto University School of ScienceP.O. Box 15100AaltoFI‐00076Finland
| | - Julius Hohlfeld
- Université de LorraineInstitut Jean LamourUMR CNRS 7198Nancy54011France
| | - Francisco Freire‐Fernández
- Department of Materials Science and Engineering and Department of ChemistryNorthwestern UniversityEvanstonIllinois60208USA
| | - Yann Le Guen
- Université de LorraineInstitut Jean LamourUMR CNRS 7198Nancy54011France
- Department of Applied PhysicsAalto University School of ScienceP.O. Box 15100AaltoFI‐00076Finland
| | - Nikolai Kuznetsov
- Department of Applied PhysicsAalto University School of ScienceP.O. Box 15100AaltoFI‐00076Finland
| | | | | | - Daniel Lacour
- Université de LorraineInstitut Jean LamourUMR CNRS 7198Nancy54011France
| | - Michel Hehn
- Université de LorraineInstitut Jean LamourUMR CNRS 7198Nancy54011France
| | - Sebastiaan van Dijken
- Department of Applied PhysicsAalto University School of ScienceP.O. Box 15100AaltoFI‐00076Finland
| | - Stéphane Mangin
- Université de LorraineInstitut Jean LamourUMR CNRS 7198Nancy54011France
| |
Collapse
|
8
|
Zhang W, Huang TX, Hehn M, Malinowski G, Verges M, Hohlfeld J, Remy Q, Lacour D, Wang XR, Zhao GP, Vallobra P, Xu Y, Mangin S, Zhao WS. Optical Creation of Skyrmions by Spin Reorientation Transition in Ferrimagnetic CoHo Alloys. ACS Appl Mater Interfaces 2023; 15:5608-5619. [PMID: 36689950 DOI: 10.1021/acsami.2c19411] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Manipulating magnetic skyrmions by means of a femtosecond (fs) laser pulse has attracted great interest due to their promising applications in efficient information-storage devices with ultralow energy consumption. However, the mechanism underlying the creation of skyrmions induced by an fs laser is still lacking. As a result, a key challenge is to reveal the pathway for the massive reorientation of magnetization from trivial to nontrivial topological states. Here, we studied a series of ferrimagnetic CoHo alloys and investigated the effect of a single laser pulse on the magnetic states. Thanks to the time-resolved magneto-optical Kerr effect and imaging techniques, we demonstrate that the laser-induced phase transitions from single domains into a topological skyrmion phase are mediated by the transient in-plane magnetization state, in real time and space domains, respectively. Combining experiments and micromagnetic simulations, we propose a two-step process for creating skyrmions through laser pulse irradiation: (i) the electron temperature enhancement induces a spin reorientation transition on a picosecond (ps) timescale due to the suppression of perpendicular magnetic anisotropy (PMA) and (ii) the PMA slowly restores, accompanied by out-of-plane magnetization recovery, leading to the generation of skyrmions with the help of spin fluctuations. This work provides a route to control skyrmion patterns using an fs laser, thereby establishing the foundation for further exploration of topological magnetism at ultrafast timescales.
Collapse
Affiliation(s)
- Wei Zhang
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, Hefei230013, China
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing100191, China
- CNRS, IJL, Université de Lorraine, NancyF-54000, France
| | | | - Michel Hehn
- CNRS, IJL, Université de Lorraine, NancyF-54000, France
| | | | - Maxime Verges
- CNRS, IJL, Université de Lorraine, NancyF-54000, France
| | | | - Quentin Remy
- CNRS, IJL, Université de Lorraine, NancyF-54000, France
| | - Daniel Lacour
- CNRS, IJL, Université de Lorraine, NancyF-54000, France
| | - Xin Ran Wang
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing100191, China
| | - Guo Ping Zhao
- College of Physics and Electronic Engineering and Institute of Solid State Physics, Sichuan Normal University, Chengdu610066, China
| | - Pierre Vallobra
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, Hefei230013, China
| | - Yong Xu
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, Hefei230013, China
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing100191, China
| | | | - Wei Sheng Zhao
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, Hefei230013, China
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing100191, China
| |
Collapse
|
9
|
Remy Q, Hohlfeld J, Vergès M, Le Guen Y, Gorchon J, Malinowski G, Mangin S, Hehn M. Accelerating ultrafast magnetization reversal by non-local spin transfer. Nat Commun 2023; 14:445. [PMID: 36707525 PMCID: PMC9883451 DOI: 10.1038/s41467-023-36164-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Accepted: 01/19/2023] [Indexed: 01/29/2023] Open
Abstract
When exciting a magnetic material with a femtosecond laser pulse, the amplitude of magnetization is no longer constant and can decrease within a time scale comparable to the duration of the optical excitation. This ultrafast demagnetization can even trigger an ultrafast, out of equilibrium, phase transition to a paramagnetic state. The reciprocal effect, namely an ultrafast remagnetization from the zero magnetization state, is a necessary ingredient to achieve a complete ultrafast reversal. However, the speed of remagnetization is limited by the universal critical slowing down which appears close to a phase transition. Here we demonstrate that magnetization can be reversed in a few hundreds of femtoseconds by overcoming the critical slowing down thanks to ultrafast spin cooling and spin heating mechanisms. We foresee that these results outline the potential of ultrafast spintronics for future ultrafast and energy efficient magnetic memory and storage devices. Furthermore, this should motivate further theoretical works in the field of femtosecond magnetization reversal.
Collapse
Affiliation(s)
- Quentin Remy
- grid.461892.00000 0000 9407 7201Université de Lorraine, Institut Jean Lamour, UMR, 7198 CNRS Nancy, France
| | - Julius Hohlfeld
- grid.461892.00000 0000 9407 7201Université de Lorraine, Institut Jean Lamour, UMR, 7198 CNRS Nancy, France
| | - Maxime Vergès
- grid.461892.00000 0000 9407 7201Université de Lorraine, Institut Jean Lamour, UMR, 7198 CNRS Nancy, France
| | - Yann Le Guen
- grid.461892.00000 0000 9407 7201Université de Lorraine, Institut Jean Lamour, UMR, 7198 CNRS Nancy, France
| | - Jon Gorchon
- grid.461892.00000 0000 9407 7201Université de Lorraine, Institut Jean Lamour, UMR, 7198 CNRS Nancy, France
| | - Grégory Malinowski
- grid.461892.00000 0000 9407 7201Université de Lorraine, Institut Jean Lamour, UMR, 7198 CNRS Nancy, France
| | - Stéphane Mangin
- grid.461892.00000 0000 9407 7201Université de Lorraine, Institut Jean Lamour, UMR, 7198 CNRS Nancy, France
| | - Michel Hehn
- grid.461892.00000 0000 9407 7201Université de Lorraine, Institut Jean Lamour, UMR, 7198 CNRS Nancy, France
| |
Collapse
|
10
|
Wong PKJ, Zhang W, Wee ATS, Mangin S, Heutz S. Editorial: Intelligent Spintronics: From Hybrid Materials to Integrative Devices and Computing Architectures. Front Nanotechnol 2022. [DOI: 10.3389/fnano.2022.863388] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
|
11
|
Brock JA, Kitcher MD, Vallobra P, Medapalli R, Li MP, De Graef M, Riley GA, Nembach HT, Mangin S, Sokalski V, Fullerton EE. Dynamic Symmetry Breaking in Chiral Magnetic Systems. Adv Mater 2021; 33:e2101524. [PMID: 34363253 DOI: 10.1002/adma.202101524] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2021] [Revised: 05/01/2021] [Indexed: 06/13/2023]
Abstract
The Dzyaloshinskii-Moriya interaction (DMI) in magnetic systems stabilizes spin textures with preferred chirality, applicable to next-generation memory and computing architectures. In perpendicularly magnetized heavy-metal/ferromagnet films, the interfacial DMI originating from structural inversion asymmetry and strong spin-orbit coupling favors chiral Néel-type domain walls (DWs) whose energetics and mobility remain at issue. Here, a new effect is characterized in which domains expand unidirectionally in response to a combination of out-of-plane and in-plane magnetic fields, with the growth direction controlled by the in-plane field strength. These growth directionalities and symmetries with applied fields cannot be understood from static treatments alone. The authors theoretically demonstrate that perpendicular field torques stabilize steady-state magnetization profiles highly asymmetric in elastic energy, resulting in a dynamic symmetry breaking consistent with the experimental findings. This phenomenon sheds light on the mechanisms governing the dynamics of Néel-type DWs and expands the utility of field-driven DW motion to probe and control chiral DWs.
Collapse
Affiliation(s)
- Jeffrey A Brock
- Center for Memory and Recording Research, University of California - San Diego, La Jolla, 92093, USA
| | - Michael D Kitcher
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, 15213, USA
| | - Pierre Vallobra
- Center for Memory and Recording Research, University of California - San Diego, La Jolla, 92093, USA
- Institute Jean Lamour, University of Lorraine, UMR CNRS, Nancy, 7198, France
| | - Rajasekhar Medapalli
- Center for Memory and Recording Research, University of California - San Diego, La Jolla, 92093, USA
| | - Maxwell P Li
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, 15213, USA
| | - Marc De Graef
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, 15213, USA
| | - Grant A Riley
- Center for Memory and Recording Research, University of California - San Diego, La Jolla, 92093, USA
| | - Hans T Nembach
- Department of Physics, University of Colorado, Boulder, CO, 80309, USA
| | - Stéphane Mangin
- Institute Jean Lamour, University of Lorraine, UMR CNRS, Nancy, 7198, France
| | - Vincent Sokalski
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, 15213, USA
| | - Eric E Fullerton
- Center for Memory and Recording Research, University of California - San Diego, La Jolla, 92093, USA
| |
Collapse
|
12
|
Scheid P, Sharma S, Malinowski G, Mangin S, Lebègue S. Ab Initio Study of Helicity-Dependent Light-Induced Demagnetization: From the Optical Regime to the Extreme Ultraviolet Regime. Nano Lett 2021; 21:1943-1947. [PMID: 33605143 DOI: 10.1021/acs.nanolett.0c04166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We use ab initio real-time time-dependent density functional theory to investigate the effect of optical and extreme ultraviolet (XUV) circularly polarized femtosecond pulses on the magnetization dynamics of ferromagnetic materials. We demonstrate that the light induces a helicity-dependent reduction of the magnitude of the magnetization. In the XUV regime, where the 3p semicore states are involved, a larger helicity dependence persisting even after the passage of light is exhibited. Finally, we were able to separate the part of the helicity-dependent dynamics due to the absorption from the part due to the inverse Faraday effect. Doing so, we show that the former has, overall, a greater impact on the magnetization than the latter, especially after the pulse and in the XUV regime. This work hints at the yet experimentally unexplored territory of the XUV light-induced helicity-dependent dynamics, which, according to our prediction, could magnify the helicity-dependent dynamics already exhibited in the optical regime.
Collapse
Affiliation(s)
- Philippe Scheid
- Université de Lorraine, LPCT, CNRS, UMR 7019, BP 70239, 54506 Cedex Vandoeuvre-lès-Nancy, France
- Université de Lorraine, IJL, CNRS, UMR 7198, BP 70239, 54000 Cedex Nancy, France
| | - Sangeeta Sharma
- Max-Born-Institute for Non-linear Optics and Short Pulse Spectroscopy, Max-Born Strasse 2A, 12489 Berlin, Germany
| | - Gregory Malinowski
- Université de Lorraine, IJL, CNRS, UMR 7198, BP 70239, 54000 Cedex Nancy, France
| | - Stéphane Mangin
- Université de Lorraine, IJL, CNRS, UMR 7198, BP 70239, 54000 Cedex Nancy, France
| | - Sébastien Lebègue
- Université de Lorraine, LPCT, CNRS, UMR 7019, BP 70239, 54506 Cedex Vandoeuvre-lès-Nancy, France
| |
Collapse
|
13
|
Céspedes-Berrocal D, Damas H, Petit-Watelot S, Maccariello D, Tang P, Arriola-Córdova A, Vallobra P, Xu Y, Bello JL, Martin E, Migot S, Ghanbaja J, Zhang S, Hehn M, Mangin S, Panagopoulos C, Cros V, Fert A, Rojas-Sánchez JC. Current-Induced Spin Torques on Single GdFeCo Magnetic Layers. Adv Mater 2021; 33:e2007047. [PMID: 33604960 DOI: 10.1002/adma.202007047] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2020] [Revised: 12/20/2020] [Indexed: 06/12/2023]
Abstract
Spintronics exploit spin-orbit coupling (SOC) to generate spin currents, spin torques, and, in the absence of inversion symmetry, Rashba and Dzyaloshinskii-Moriya interactions. The widely used magnetic materials, based on 3d metals such as Fe and Co, possess a small SOC. To circumvent this shortcoming, the common practice has been to utilize the large SOC of nonmagnetic layers of 5d heavy metals (HMs), such as Pt, to generate spin currents and, in turn, exert spin torques on the magnetic layers. Here, a new class of material architectures is introduced, excluding nonmagnetic 5d HMs, for high-performance spintronics operations. Very strong current-induced torques exerted on single ferrimagnetic GdFeCo layers, due to the combination of large SOC of the Gd 5d states and inversion symmetry breaking mainly engineered by interfaces, are demonstrated. These "self-torques" are enhanced around the magnetization compensation temperature and can be tuned by adjusting the spin absorption outside the GdFeCo layer. In other measurements, the very large emission of spin current from GdFeCo, 80% (20%) of spin anomalous Hall effect (spin Hall effect) symmetry is determined. This material platform opens new perspectives to exert "self-torques" on single magnetic layers as well as to generate spin currents from a magnetic layer.
Collapse
Affiliation(s)
- David Céspedes-Berrocal
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
- Facultad de Ciencias, Universidad Nacional de Ingeniería, Rímac, Lima, 15333, Peru
| | - Heloïse Damas
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | | | - Davide Maccariello
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | - Ping Tang
- Department of Physics, University of Arizona, Tucson, AZ, 85721, USA
| | - Aldo Arriola-Córdova
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
- Facultad de Ciencias, Universidad Nacional de Ingeniería, Rímac, Lima, 15333, Peru
| | - Pierre Vallobra
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Yong Xu
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Jean-Loïs Bello
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Elodie Martin
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Sylvie Migot
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Jaafar Ghanbaja
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Shufeng Zhang
- Department of Physics, University of Arizona, Tucson, AZ, 85721, USA
| | - Michel Hehn
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Stéphane Mangin
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Christos Panagopoulos
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Vincent Cros
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | - Albert Fert
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | | |
Collapse
|
14
|
Igarashi J, Remy Q, Iihama S, Malinowski G, Hehn M, Gorchon J, Hohlfeld J, Fukami S, Ohno H, Mangin S. Engineering Single-Shot All-Optical Switching of Ferromagnetic Materials. Nano Lett 2020; 20:8654-8660. [PMID: 33226825 DOI: 10.1021/acs.nanolett.0c03373] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Since it was recently demonstrated in a spin-valve structure, magnetization reversal of a ferromagnetic layer using a single ultrashort optical pulse has attracted attention for future ultrafast and energy-efficient magnetic storage or memory devices. However, the mechanism and the role of the magnetic properties of the ferromagnet as well as the time scale of the magnetization switching are not understood. Here, we investigate single-shot all-optical magnetization switching in a GdFeCo/Cu/[CoxNi1-x/Pt] spin-valve structure. We demonstrate that the threshold fluence for switching both the GdFeCo and the ferromagnetic layer depends on the laser pulse duration and the thickness and the Curie temperature of the ferromagnetic layer. We are able to explain most of the experimental results using a phenomenological model. This work provides a way to engineer ferromagnetic materials for energy efficient single-shot all-optical magnetization switching.
Collapse
Affiliation(s)
- Junta Igarashi
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy 54011, France
| | - Quentin Remy
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy 54011, France
| | - Satoshi Iihama
- Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, 6-3 Aramaki Aza Aoba, Sendai 980-8578, Japan
- Center for Spintronics Research Network, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
| | - Grégory Malinowski
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy 54011, France
| | - Michel Hehn
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy 54011, France
| | - Jon Gorchon
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy 54011, France
| | - Julius Hohlfeld
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy 54011, France
| | - Shunsuke Fukami
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- Center for Spintronics Research Network, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aramaki Aza Aoba, Sendai 980-0845, Japan
| | - Hideo Ohno
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- Center for Spintronics Research Network, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aramaki Aza Aoba, Sendai 980-0845, Japan
| | - Stéphane Mangin
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy 54011, France
| |
Collapse
|
15
|
Remy Q, Igarashi J, Iihama S, Malinowski G, Hehn M, Gorchon J, Hohlfeld J, Fukami S, Ohno H, Mangin S. Energy Efficient Control of Ultrafast Spin Current to Induce Single Femtosecond Pulse Switching of a Ferromagnet. Adv Sci (Weinh) 2020; 7:2001996. [PMID: 33304754 PMCID: PMC7709970 DOI: 10.1002/advs.202001996] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2020] [Revised: 08/10/2020] [Indexed: 05/23/2023]
Abstract
New methods to induce magnetization switching in a thin ferromagnetic material using femtosecond laser pulses without the assistance of an applied external magnetic field have recently attracted a lot of interest. It has been shown that by optically triggering the reversal of the magnetization in a GdFeCo layer, the magnetization of a nearby ferromagnetic thin film can also be reversed via spin currents originating in the GdFeCo layer. Here, using a similar structure, it is shown that the magnetization reversal of the GdFeCo is not required in order to reverse the magnetization of the ferromagnetic thin film. This switching is attributed to the ultrafast spin current and can be generated by the GdFeCo demagnetization. A larger energy efficiency of the ferromagnetic layer single pulse switching is obtained for a GdFeCo with a larger Gd concentration. Those ultrafast and energy efficient switchings observed in such spintronic devices open a new path toward ultrafast and energy efficient magnetic memories.
Collapse
Affiliation(s)
- Quentin Remy
- Université de LorraineInstitut Jean LamourUMR CNRSNancy7198France
| | - Junta Igarashi
- Laboratory for Nanoelectronics and SpintronicsResearch Institute of Electrical CommunicationTohoku University2‐1‐1 Katahira, AobaSendai980‐8577Japan
| | - Satoshi Iihama
- Frontier Research Institute for Interdisciplinary SciencesTohoku University6‐3 Aramaki Aza AobaSendai980‐8578Japan
- Center for Spintronics Research NetworkTohoku University2‐1‐1 Katahira, AobaSendai980‐8577Japan
| | | | - Michel Hehn
- Université de LorraineInstitut Jean LamourUMR CNRSNancy7198France
| | - Jon Gorchon
- Université de LorraineInstitut Jean LamourUMR CNRSNancy7198France
| | - Julius Hohlfeld
- Université de LorraineInstitut Jean LamourUMR CNRSNancy7198France
| | - Shunsuke Fukami
- Laboratory for Nanoelectronics and SpintronicsResearch Institute of Electrical CommunicationTohoku University2‐1‐1 Katahira, AobaSendai980‐8577Japan
- WPI Advanced Institute for Materials ResearchTohoku University2‐1‐1 Katahira, AobaSendai980‐8577Japan
- Center for Science and Innovation in SpintronicsTohoku University2‐1‐1 Katahira, AobaSendai980‐8577Japan
- Center for Spintronics Research NetworkTohoku University2‐1‐1 Katahira, AobaSendai980‐8577Japan
- Center for Innovative Integrated Electronic SystemsTohoku University468‐1 Aramaki Aza AobaSendai980‐0845Japan
| | - Hideo Ohno
- Laboratory for Nanoelectronics and SpintronicsResearch Institute of Electrical CommunicationTohoku University2‐1‐1 Katahira, AobaSendai980‐8577Japan
- WPI Advanced Institute for Materials ResearchTohoku University2‐1‐1 Katahira, AobaSendai980‐8577Japan
- Center for Science and Innovation in SpintronicsTohoku University2‐1‐1 Katahira, AobaSendai980‐8577Japan
- Center for Spintronics Research NetworkTohoku University2‐1‐1 Katahira, AobaSendai980‐8577Japan
- Center for Innovative Integrated Electronic SystemsTohoku University468‐1 Aramaki Aza AobaSendai980‐0845Japan
| | - Stéphane Mangin
- Université de LorraineInstitut Jean LamourUMR CNRSNancy7198France
| |
Collapse
|
16
|
Guillemard C, Zhang W, Malinowski G, de Melo C, Gorchon J, Petit-Watelot S, Ghanbaja J, Mangin S, Le Fèvre P, Bertran F, Andrieu S. Engineering Co 2 MnAl x Si 1- x Heusler Compounds as a Model System to Correlate Spin Polarization, Intrinsic Gilbert Damping, and Ultrafast Demagnetization. Adv Mater 2020; 32:e1908357. [PMID: 32452576 DOI: 10.1002/adma.201908357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2019] [Revised: 04/07/2020] [Accepted: 04/14/2020] [Indexed: 06/11/2023]
Abstract
Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping, responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond timescale. Here, engineered Co2 MnAlx Si1- x Heusler compounds are used to adjust the degree of spin polarization at the Fermi energy, P, from 60% to 100% and to investigate how they correlate with the damping. It is experimentally demonstrated that the damping decreases when increasing the spin polarization from 1.1 × 10-3 for Co2 MnAl with 63% spin polarization to an ultralow value of 4.6 × 10-4 for the half-metallic ferromagnet Co2 MnSi. This allows the investigation of the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1 - P and, as a consequence, to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, the high-quality Heusler compounds allow control over the band structure and therefore the channel for spin angular momentum dissipation.
Collapse
Affiliation(s)
- Charles Guillemard
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy, 54500, France
- Synchrotron SOLEIL-CNRS, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Wei Zhang
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy, 54500, France
| | - Gregory Malinowski
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy, 54500, France
| | - Claudia de Melo
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy, 54500, France
| | - Jon Gorchon
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy, 54500, France
| | | | - Jaafar Ghanbaja
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy, 54500, France
| | - Stéphane Mangin
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy, 54500, France
| | - Patrick Le Fèvre
- Synchrotron SOLEIL-CNRS, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Francois Bertran
- Synchrotron SOLEIL-CNRS, Saint-Aubin, Gif-sur-Yvette, 91192, France
| | - Stéphane Andrieu
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy, 54500, France
| |
Collapse
|
17
|
Liao J, Vallobra P, O'Brien L, Atxitia U, Raposo V, Petit D, Vemulkar T, Malinowski G, Hehn M, Martínez E, Mangin S, Cowburn RP. Controlling All-Optical Helicity-Dependent Switching in Engineered Rare-Earth Free Synthetic Ferrimagnets. Adv Sci (Weinh) 2019; 6:1901876. [PMID: 31871864 PMCID: PMC6918116 DOI: 10.1002/advs.201901876] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/21/2019] [Revised: 09/25/2019] [Indexed: 06/10/2023]
Abstract
All-optical helicity-dependent switching in ferromagnetic layers has revealed an unprecedented route to manipulate magnetic configurations by circularly polarized femtosecond laser pulses. In this work, rare-earth free synthetic ferrimagnetic heterostructures made from two antiferromagnetically exchange coupled ferromagnetic layers are studied. Experimental results, supported by numerical simulations, show that the designed structures enable all-optical switching which is controlled, not only by light helicity, but also by the relative Curie temperature of each ferromagnetic layer. Indeed, through the antiferromagnetic exchange coupling, the layer with the larger Curie temperature determines the final orientation of the other layer and so the synthetic ferrimagnet. For similar Curie temperatures, helicity-independent back switching is observed and the final magnetic configuration is solely determined by the initial magnetic state. This demonstration of electrically-detected, optical control of engineered rare-earth free heterostructures opens a novel route toward practical opto-spintronics.
Collapse
Affiliation(s)
- Jung‐Wei Liao
- Cavendish LaboratoryUniversity of CambridgeJ J Thomson AvenueCambridgeCB3 0HEUK
| | - Pierre Vallobra
- Institute Jean LamourUMR CNRS 7198Universite de Lorraine2 allée André Guinier‐BP 5084054011NancyFrance
| | - Liam O'Brien
- Department of PhysicsUniversity of LiverpoolLiverpoolL69 7ZEUK
| | - Unai Atxitia
- Department of PhysicsFreie Universität BerlinArnimalle 1414195BerlinGermany
| | - Victor Raposo
- Department of Applied Physics of the Faculty of ScienceUniversity of Salamanca37008SalamancaSpain
| | - Dorothée Petit
- Cavendish LaboratoryUniversity of CambridgeJ J Thomson AvenueCambridgeCB3 0HEUK
| | - Tarun Vemulkar
- Cavendish LaboratoryUniversity of CambridgeJ J Thomson AvenueCambridgeCB3 0HEUK
| | - Gregory Malinowski
- Institute Jean LamourUMR CNRS 7198Universite de Lorraine2 allée André Guinier‐BP 5084054011NancyFrance
| | - Michel Hehn
- Institute Jean LamourUMR CNRS 7198Universite de Lorraine2 allée André Guinier‐BP 5084054011NancyFrance
| | - Eduardo Martínez
- Department of Applied Physics of the Faculty of ScienceUniversity of Salamanca37008SalamancaSpain
| | - Stéphane Mangin
- Institute Jean LamourUMR CNRS 7198Universite de Lorraine2 allée André Guinier‐BP 5084054011NancyFrance
| | - Russell P. Cowburn
- Cavendish LaboratoryUniversity of CambridgeJ J Thomson AvenueCambridgeCB3 0HEUK
| |
Collapse
|
18
|
Gao X, Yang B, Devaux X, Yang H, Liu J, Liang S, Stoffel M, Pasquier L, Hyot B, Grenier A, Bernier N, Migot S, Mangin S, Rinnert H, Jiang C, Zeng Z, Tang N, Sun Q, Ding S, Yang H, Lu Y. Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures. Nanoscale Adv 2019; 1:4466-4475. [PMID: 36134416 PMCID: PMC9416972 DOI: 10.1039/c9na00340a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2019] [Accepted: 09/29/2019] [Indexed: 06/16/2023]
Abstract
We report a strong perpendicular magnetic anisotropy (PMA) in Au/Co/MgO/GaN heterostructures from both experiments and first-principles calculations. The Au/Co/MgO heterostructures have been grown by molecular beam epitaxy (MBE) on GaN/sapphire substrates. By carefully optimizing the growth conditions, we obtained a fully epitaxial structure with a crystalline orientation relationship Au(111)[1̄10]//Co(0001)[112̄0]//MgO(111)[101̄]//GaN(0002)[112̄0]. More interestingly, we demonstrate that a 4.6 nm thick Co film grown on MgO/GaN still exhibits a large perpendicular magnetic anisotropy. First-principles calculations performed on the Co (4ML)/MgO(111) structure showed that the MgO(111) surface can strongly enhance the magnetic anisotropy energy by 40% compared to a reference 4ML thick Co hcp film. Our layer-resolved and orbital-hybridization resolved anisotropy analyses helped to clarify that the origin of the PMA enhancement is due to the interfacial hybridization of O 2p and Co 3d orbitals at the Co/MgO interface. The perpendicularly magnetized Au/Co/MgO/GaN heterostructures are promising for efficient spin injection and detection in GaN based opto-electronics without any external magnetic field.
Collapse
Affiliation(s)
- Xue Gao
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Baishun Yang
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo 315201 P. R. China
| | - Xavier Devaux
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Hongxin Yang
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo 315201 P. R. China
| | - Jianping Liu
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Shiheng Liang
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Mathieu Stoffel
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Ludovic Pasquier
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | | | | | | | - Sylvie Migot
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Stéphane Mangin
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Hervé Rinnert
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Chunping Jiang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Zhongming Zeng
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Ning Tang
- School of Physics, Peking University 100871 Beijing P. R. China
| | - Qian Sun
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Sunan Ding
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Hui Yang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Yuan Lu
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| |
Collapse
|
19
|
Wu H, Xu Y, Deng P, Pan Q, Razavi SA, Wong K, Huang L, Dai B, Shao Q, Yu G, Han X, Rojas-Sánchez JC, Mangin S, Wang KL. Spin-Orbit Torque Switching of a Nearly Compensated Ferrimagnet by Topological Surface States. Adv Mater 2019; 31:e1901681. [PMID: 31282067 DOI: 10.1002/adma.201901681] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2019] [Revised: 05/07/2019] [Indexed: 06/09/2023]
Abstract
Utilizing spin-orbit torque (SOT) to switch a magnetic moment provides a promising route for low-power-dissipation spintronic devices. Here, the SOT switching of a nearly compensated ferrimagnet Gdx (FeCo)1- x by the topological insulator [Bi2 Se3 and (BiSb)2 Te3 ] is investigated at room temperature. The switching current density of (BiSb)2 Te3 (1.20 × 105 A cm-2 ) is more than one order of magnitude smaller than that in conventional heavy-metal-based structures, which indicates the ultrahigh efficiency of charge-spin conversion (>1) in topological surface states. By tuning the net magnetic moment of Gdx (FeCo)1- x via changing the composition, the SOT efficiency has a significant enhancement (6.5 times) near the magnetic compensation point, and at the same time the switching speed can be as fast as several picoseconds. Combining the topological surface states and the nearly compensated ferrimagnets provides a promising route for practical energy-efficient and high-speed spintronic devices.
Collapse
Affiliation(s)
- Hao Wu
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA
| | - Yong Xu
- Institut Jean Lamour, CNRS UMR 7198, Université de Lorraine, Nancy, F-54500, France
| | - Peng Deng
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA
| | - Quanjun Pan
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA
| | - Seyed Armin Razavi
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA
| | - Kin Wong
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA
| | - Li Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA
| | - Qiming Shao
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | | | - Stéphane Mangin
- Institut Jean Lamour, CNRS UMR 7198, Université de Lorraine, Nancy, F-54500, France
| | - Kang L Wang
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA
| |
Collapse
|
20
|
Deb M, Popova E, Hehn M, Keller N, Petit-Watelot S, Bargheer M, Mangin S, Malinowski G. Femtosecond Laser-Excitation-Driven High Frequency Standing Spin Waves in Nanoscale Dielectric Thin Films of Iron Garnets. Phys Rev Lett 2019; 123:027202. [PMID: 31386535 DOI: 10.1103/physrevlett.123.027202] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2019] [Indexed: 06/10/2023]
Abstract
We demonstrate that femtosecond laser pulses allow triggering high-frequency standing spin-wave modes in nanoscale thin films of a bismuth-substituted yttrium iron garnet. By varying the strength of the external magnetic field, we prove that two distinct branches of the dispersion relation are excited for all the modes. This is reflected in particular at a very weak magnetic field (∼33 mT) by a spin dynamics with a frequency up to 15 GHz, which is 15 times higher than the one associated with the ferromagnetic resonance mode. We argue that this phenomenon is triggered by ultrafast changes of the magnetic anisotropy via laser excitation of incoherent and coherent phonons. These findings open exciting prospects for ultrafast photo magnonics.
Collapse
Affiliation(s)
- Marwan Deb
- Institut Jean Lamour (IJL), CNRS UMR 7198, Université de Lorraine, 54506 Vandœuvre-lès-Nancy, France
- Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Str. 24-25, 14476 Potsdam, Germany
| | - Elena Popova
- Groupe d'Etude de la Matière Condensée (GEMaC), CNRS UMR 8635, Université Paris-Saclay, 78035 Versailles, France
| | - Michel Hehn
- Institut Jean Lamour (IJL), CNRS UMR 7198, Université de Lorraine, 54506 Vandœuvre-lès-Nancy, France
| | - Niels Keller
- Groupe d'Etude de la Matière Condensée (GEMaC), CNRS UMR 8635, Université Paris-Saclay, 78035 Versailles, France
| | - Sébastien Petit-Watelot
- Institut Jean Lamour (IJL), CNRS UMR 7198, Université de Lorraine, 54506 Vandœuvre-lès-Nancy, France
| | - Matias Bargheer
- Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Str. 24-25, 14476 Potsdam, Germany
| | - Stéphane Mangin
- Institut Jean Lamour (IJL), CNRS UMR 7198, Université de Lorraine, 54506 Vandœuvre-lès-Nancy, France
| | - Gregory Malinowski
- Institut Jean Lamour (IJL), CNRS UMR 7198, Université de Lorraine, 54506 Vandœuvre-lès-Nancy, France
| |
Collapse
|
21
|
Tao B, Wan C, Tang P, Feng J, Wei H, Wang X, Andrieu S, Yang H, Chshiev M, Devaux X, Hauet T, Montaigne F, Mangin S, Hehn M, Lacour D, Han X, Lu Y. Coherent Resonant Tunneling through Double Metallic Quantum Well States. Nano Lett 2019; 19:3019-3026. [PMID: 30933564 DOI: 10.1021/acs.nanolett.9b00205] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Study of resonant tunneling through multimetallic quantum well (QW) structure is not only important for the fundamental understanding of quantum transport but also for the great potential to generate advanced functionalities of spintronic devices. However, it remains challenging to engineer such a structure due to the short electron phase coherence length in metallic QW system. Here, we demonstrate the successful fabrication of double-QW structure in a single fully epitaxial magnetic tunnel junction (MTJ) heterostructure, where two Fe QW layers are sandwiched between three MgAlO x tunnel barriers. We show clear evidence of the coherent resonant tunneling through the discrete QW states in the two QWs. The coherent resonant tunneling condition is fulfilled only when the middle barrier between the two QWs is thin enough and available QW states are present simultaneously in both QWs under a certain bias. Compared to the single QW structure, the resonant tunneling in double-QW MTJ produces strong conductivity oscillations with much narrower peak width (about half) owing to the enhanced energy filtering effect. This study presents a comprehensive understanding of the resonant tunneling mechanism in MTJ with multiple QWs, which is essential for future development of new spintronic devices operating in the quantum tunneling regime.
Collapse
Affiliation(s)
- Bingshan Tao
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France
- Institute of Electrical Engineering , Chinese Academy of Sciences , Beijing 100190 , China
| | - Caihua Wan
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Ping Tang
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Jiafeng Feng
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Hongxiang Wei
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Xiao Wang
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Stéphane Andrieu
- Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France
| | - Hongxin Yang
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , China
| | - Mairbek Chshiev
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-Spintec , 38000 Grenoble , France
| | - Xavier Devaux
- Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France
| | - Thomas Hauet
- Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France
| | - François Montaigne
- Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France
| | - Stéphane Mangin
- Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France
| | - Michel Hehn
- Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France
| | - Daniel Lacour
- Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France
| | - Xiufeng Han
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Yuan Lu
- Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France
| |
Collapse
|
22
|
Cerqueira C, Qin JY, Dang H, Djeffal A, Le Breton JC, Hehn M, Rojas-Sanchez JC, Devaux X, Suire S, Migot S, Schieffer P, Mussot JG, Łaczkowski P, Anane A, Petit-Watelot S, Stoffel M, Mangin S, Liu Z, Cheng BW, Han XF, Jaffrès H, George JM, Lu Y. Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal-Silicon-Metal Vertical Structures. Nano Lett 2019; 19:90-99. [PMID: 30472859 DOI: 10.1021/acs.nanolett.8b03386] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, we have successfully fabricated metal-semiconductor-metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 μm in n-type Si at room temperature. In those experiments, a pure propagating spin current is generated via ferromagnetic resonance spin pumping and converted into a measurable voltage by using the inverse spin Hall effect occurring in the top Pt layer. A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO-Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO-Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action.
Collapse
Affiliation(s)
- Carolina Cerqueira
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
- Laboratoire des Solides Irradiés, École Polytechnique, CNRS, CEA , Université Paris-Saclay , 91128 Palaiseau , France
| | - Jian Yin Qin
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
- Beijing National Laboratory of Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences , Beijing 100190 , PR China
| | - Huong Dang
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
| | - Abdelhak Djeffal
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | | | - Michel Hehn
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Juan-Carlos Rojas-Sanchez
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Xavier Devaux
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Stéphane Suire
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Sylvie Migot
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Philippe Schieffer
- Univ RennesCNRS, IPR (Institut de Physique de Rennes) - UMR 6251 , F-35000 Rennes , France
| | - Jean-Georges Mussot
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Piotr Łaczkowski
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
| | - Abdelmadjid Anane
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
| | - Sebastien Petit-Watelot
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Mathieu Stoffel
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Stéphane Mangin
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| | - Zhi Liu
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Center of Materials Science and Optoelectronics Engineering , University of Chinese Academy of Sciences Chinese Academy of Sciences , Beijing 100083 , PR China
| | - Bu Wen Cheng
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Center of Materials Science and Optoelectronics Engineering , University of Chinese Academy of Sciences Chinese Academy of Sciences , Beijing 100083 , PR China
| | - Xiu Feng Han
- Beijing National Laboratory of Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences , Beijing 100190 , PR China
| | - Henri Jaffrès
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
| | - Jean-Marie George
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay , 91767 , Palaiseau , France
| | - Yuan Lu
- Université de Lorraine , CNRS, Institut Jean Lamour, UMR 7198, campus ARTEM , 2 Allée André Guinier , 54011 Nancy , France
| |
Collapse
|
23
|
Iihama S, Xu Y, Deb M, Malinowski G, Hehn M, Gorchon J, Fullerton EE, Mangin S. Single-Shot Multi-Level All-Optical Magnetization Switching Mediated by Spin Transport. Adv Mater 2018; 30:e1804004. [PMID: 30335226 DOI: 10.1002/adma.201804004] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2018] [Revised: 08/26/2018] [Indexed: 05/23/2023]
Abstract
All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is explored for future ultrafast and energy-efficient magnetic storage and memories. It is shown that femtosecond (fs) light pulses induce magnetization reversal in a large variety of magnetic materials. However, so far, only GdFeCo-based ferrimagnetic thin films exhibit magnetization switching via a single optical pulse. Here, the single-pulse switching of Co/Pt multilayers within a magnetic spin-valve structure ([Co/Pt]/Cu/GdFeCo) is demonstrated and four possible magnetic configurations of the spin valve can be accessed using a sequence of single fs light pulses. The experimental study reveals that the magnetization final state of the ferromagnetic [Co/Pt] layer is determined by spin-polarized currents generated by the light pulse interactions with the GdFeCo layer. This work provides an approach to deterministically switch ferromagnetic layers and a pathway to engineering materials for opto-magnetic multi-bit recording.
Collapse
Affiliation(s)
- Satoshi Iihama
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506, Vandoeuvre-lés-Nancy, France
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8568, Japan
| | - Yong Xu
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506, Vandoeuvre-lés-Nancy, France
| | - Marwan Deb
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506, Vandoeuvre-lés-Nancy, France
| | - Grégory Malinowski
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506, Vandoeuvre-lés-Nancy, France
| | - Michel Hehn
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506, Vandoeuvre-lés-Nancy, France
| | - Jon Gorchon
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506, Vandoeuvre-lés-Nancy, France
| | - Eric E Fullerton
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506, Vandoeuvre-lés-Nancy, France
- Center for Memory and Recording Research, University of California San Diego, 9500 Gilman Drive, La Jolla, CA, 92093-0401, USA
| | - Stéphane Mangin
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506, Vandoeuvre-lés-Nancy, France
| |
Collapse
|
24
|
Je SG, Vallobra P, Srivastava T, Rojas-Sánchez JC, Pham TH, Hehn M, Malinowski G, Baraduc C, Auffret S, Gaudin G, Mangin S, Béa H, Boulle O. Creation of Magnetic Skyrmion Bubble Lattices by Ultrafast Laser in Ultrathin Films. Nano Lett 2018; 18:7362-7371. [PMID: 30295499 DOI: 10.1021/acs.nanolett.8b03653] [Citation(s) in RCA: 33] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Magnetic skyrmions are topologically nontrivial spin textures which hold great promise as stable information carriers in spintronic devices at the nanoscale. One of the major challenges for developing novel skyrmion-based memory and logic devices is fast and controlled creation of magnetic skyrmions at ambient conditions. Here we demonstrate controlled generation of skyrmion bubbles and skyrmion bubble lattices from a ferromagnetic state in sputtered ultrathin magnetic films at room temperature by a single ultrafast (35 fs) laser pulse. The skyrmion bubble density increases with the laser fluence, and it finally becomes saturated, forming disordered hexagonal lattices. Moreover, we present that the skyrmion bubble lattice configuration leads to enhanced topological stability as compared to isolated skyrmions, suggesting its promising use in data storage. Our findings shed light on the optical approach to the skyrmion bubble lattice in commonly accessible materials, paving the road toward the emerging skyrmion-based memory and synaptic devices.
Collapse
Affiliation(s)
- Soong-Geun Je
- INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France
- Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France
| | - Pierre Vallobra
- Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France
| | - Titiksha Srivastava
- INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France
| | | | - Thai Ha Pham
- Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France
| | - Michel Hehn
- Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France
| | - Gregory Malinowski
- Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France
| | - Claire Baraduc
- INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France
| | - Stéphane Auffret
- INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France
| | - Gilles Gaudin
- INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France
| | - Stéphane Mangin
- Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France
| | - Hélène Béa
- INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France
| | - Olivier Boulle
- INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France
| |
Collapse
|
25
|
Liang S, Yu Z, Devaux X, Ferri A, Huang W, Yang H, Desfeux R, Li X, Migot S, Chaudhuri D, Yang H, Chshiev M, Yang C, Zhou B, Fang J, Mangin S, Lu Y. Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier. ACS Appl Mater Interfaces 2018; 10:30614-30622. [PMID: 30125490 DOI: 10.1021/acsami.8b11437] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric "ailing-channel" in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on La0.6Sr0.4MnO3/P(VDF-TrFE) ( t)/Co/Au structures with different P(VDF-TrFE) thickness ( t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDF-TrFE) needle-like grains are evidenced to induce "ailing-channels" that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric "ailing-channels" is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of "spinterface".
Collapse
Affiliation(s)
- Shiheng Liang
- Institut Jean Lamour, UMR 7198 , CNRS-Université de Lorraine, Campus ARTEM , 2 Allée André Guinier, BP 50840 , 54011 Nancy , France
- Department of Physics , Hubei University , Wuhan 430062 , P. R. China
| | - Zhongwei Yu
- Institut Jean Lamour, UMR 7198 , CNRS-Université de Lorraine, Campus ARTEM , 2 Allée André Guinier, BP 50840 , 54011 Nancy , France
- School of Science , Nantong University , 9 Seyuan Road , Nantong 226019 , P. R. China
| | - Xavier Devaux
- Institut Jean Lamour, UMR 7198 , CNRS-Université de Lorraine, Campus ARTEM , 2 Allée André Guinier, BP 50840 , 54011 Nancy , France
| | - Anthony Ferri
- Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS) , F-62300 Lens , France
| | - Weichuan Huang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics , University of Science and Technology of China , Hefei 230026 , P. R. China
| | - Huaiwen Yang
- Institut Jean Lamour, UMR 7198 , CNRS-Université de Lorraine, Campus ARTEM , 2 Allée André Guinier, BP 50840 , 54011 Nancy , France
| | - Rachel Desfeux
- Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS) , F-62300 Lens , France
| | - Xiaoguang Li
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics , University of Science and Technology of China , Hefei 230026 , P. R. China
| | - Sylvie Migot
- Institut Jean Lamour, UMR 7198 , CNRS-Université de Lorraine, Campus ARTEM , 2 Allée André Guinier, BP 50840 , 54011 Nancy , France
| | - Debapriya Chaudhuri
- Univ. Grenoble Alpes, CEA, CNRS , Grenoble INP, INAC-Spintec, 38000 Grenoble , France
| | - Hongxin Yang
- Key Laboratory of Magnetic Materials and Devices , Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201 , China
| | - Mairbek Chshiev
- Univ. Grenoble Alpes, CEA, CNRS , Grenoble INP, INAC-Spintec, 38000 Grenoble , France
| | - Changping Yang
- Department of Physics , Hubei University , Wuhan 430062 , P. R. China
| | - Bin Zhou
- Department of Physics , Hubei University , Wuhan 430062 , P. R. China
| | - Jinghuai Fang
- School of Science , Nantong University , 9 Seyuan Road , Nantong 226019 , P. R. China
| | - Stéphane Mangin
- Institut Jean Lamour, UMR 7198 , CNRS-Université de Lorraine, Campus ARTEM , 2 Allée André Guinier, BP 50840 , 54011 Nancy , France
| | - Yuan Lu
- Institut Jean Lamour, UMR 7198 , CNRS-Université de Lorraine, Campus ARTEM , 2 Allée André Guinier, BP 50840 , 54011 Nancy , France
| |
Collapse
|
26
|
Tao B, Barate P, Devaux X, Renucci P, Frougier J, Djeffal A, Liang S, Xu B, Hehn M, Jaffrès H, George JM, Marie X, Mangin S, Han X, Wang Z, Lu Y. Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence. Nanoscale 2018; 10:10213-10220. [PMID: 29789851 DOI: 10.1039/c8nr02250j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Remanent spin injection into a spin light emitting diode (spin-LED) at zero magnetic field is a prerequisite for future application of spin optoelectronics. Here, we demonstrate the remanent spin injection into GaAs based LEDs with a thermally stable Mo/CoFeB/MgO spin injector. A systematic study of magnetic properties, polarization-resolved electroluminescence (EL) and atomic-scale interfacial structures has been performed in comparison with the Ta/CoFeB/MgO spin injector. The perpendicular magnetic anisotropy (PMA) of the Mo/CoFeB/MgO injector shows more advanced thermal stability than that of the Ta/CoFeB/MgO injector and robust PMA can be maintained up to 400 °C annealing. The remanent circular polarization (PC) of EL from the Mo capped spin-LED reaches a maximum value of 10% after 300 °C annealing, and even remains at 4% after 400 °C annealing. In contrast, the Ta capped spin-LED almost completely loses the remanent PC under 400 °C annealing. Combined advanced electron microscopy and spectroscopy studies reveal that a large amount of Ta diffuses into the MgO tunneling barrier through the CoFeB layer after 400 °C annealing. However, the diffusion of Mo into CoFeB is limited and never reaches the MgO barrier. These findings afford a comprehensive perspective to use the highly thermally stable Mo/CoFeB/MgO spin injector for efficient electrical spin injection in remanence.
Collapse
Affiliation(s)
- Bingshan Tao
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, Campus ARTEM, 2 Allée André Guinier, BP 50840, 54011 Nancy, France.
| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|
27
|
Talantsev A, Lu Y, Fache T, Lavanant M, Hamadeh A, Aristov A, Koplak O, Morgunov R, Mangin S. Relaxation dynamics of magnetization transitions in synthetic antiferromagnet with perpendicular anisotropy. J Phys Condens Matter 2018; 30:135804. [PMID: 29437155 DOI: 10.1088/1361-648x/aaaf04] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two synthetic antiferromagnet bilayer systems with strong perpendicular anisotropy CoFeB/Ta/CoFeB and Pt/Co/Ir/Co/Pt have been grown using sputtering techniques. For both systems two types of magnetization transitions have been studied. The first one concerns transitions from a state where magnetizations of the two magnetic layers are parallel (P state) to a state where magnetizations of the two layers are aligned antiparallel (AP state). The second one concerns transitions between the two possible antiparallel alignments (AP+ to AP-). For both systems and both transitions after-effect measurements can be understood in the frame of nucleation-propagation model. Time derivative analysis of magnetic relaxation curves and mapping of the first order reversal curves at different temperature allowed us to demonstrate the presence of different pinning centers, which number can be controlled by magnetic field and temperature.
Collapse
Affiliation(s)
- A Talantsev
- Institute of Problems of Chemical Physics, 142432, Chernogolovka, Moscow, Russia. Department of Emerging Materials Science, DGIST, 42988, Daegu, Republic of Korea. Tambov State Technical University, 392000, Tambov, Russia
| | | | | | | | | | | | | | | | | |
Collapse
|
28
|
Xu Y, Deb M, Malinowski G, Hehn M, Zhao W, Mangin S. Ultrafast Magnetization Manipulation Using Single Femtosecond Light and Hot-Electron Pulses. Adv Mater 2017; 29:1703474. [PMID: 28961343 DOI: 10.1002/adma.201703474] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2017] [Revised: 07/28/2017] [Indexed: 06/07/2023]
Abstract
Current-induced magnetization manipulation is a key issue for spintronic applications. This manipulation must be fast, deterministic, and nondestructive in order to function in device applications. Therefore, single- electronic-pulse-driven deterministic switching of the magnetization on the picosecond timescale represents a major step toward future developments of ultrafast spintronic systems. Here, the ultrafast magnetization dynamics in engineered Gdx [FeCo]1-x -based structures are studied to compare the effect of femtosecond laser and hot-electron pulses. It is demonstrated that a single femtosecond hot-electron pulse causes deterministic magnetization reversal in either Gd-rich and FeCo-rich alloys similarly to a femtosecond laser pulse. In addition, it is shown that the limiting factor of such manipulation for perpendicular magnetized films arises from the formation of a multidomain state due to dipolar interactions. By performing time-resolved measurements under various magnetic fields, it is demonstrated that the same magnetization dynamics are observed for both light and hot-electron excitation, and that the full magnetization reversal takes place within 40 ps. The efficiency of the ultrafast current-induced magnetization manipulation is enhanced due to the ballistic transport of hot electrons before reaching the GdFeCo magnetic layer.
Collapse
Affiliation(s)
- Yong Xu
- Institut Jean Lamour, CNRS UMR 7198, Université de Lorraine, 54506, Vandœuvre-lès-Nancy, France
- Fert Beijing Research Institute, BDBC Beihang University, Beijing, 100191, China
| | - Marwan Deb
- Institut Jean Lamour, CNRS UMR 7198, Université de Lorraine, 54506, Vandœuvre-lès-Nancy, France
| | - Grégory Malinowski
- Institut Jean Lamour, CNRS UMR 7198, Université de Lorraine, 54506, Vandœuvre-lès-Nancy, France
| | - Michel Hehn
- Institut Jean Lamour, CNRS UMR 7198, Université de Lorraine, 54506, Vandœuvre-lès-Nancy, France
| | - Weisheng Zhao
- Fert Beijing Research Institute, BDBC Beihang University, Beijing, 100191, China
| | - Stéphane Mangin
- Institut Jean Lamour, CNRS UMR 7198, Université de Lorraine, 54506, Vandœuvre-lès-Nancy, France
| |
Collapse
|
29
|
Liang S, Yang H, Yang H, Tao B, Djeffal A, Chshiev M, Huang W, Li X, Ferri A, Desfeux R, Mangin S, Lacour D, Hehn M, Copie O, Dumesnil K, Lu Y. Ferroelectric Control of Organic/Ferromagnetic Spinterface. Adv Mater 2016; 28:10204-10210. [PMID: 27709711 DOI: 10.1002/adma.201603638] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2016] [Revised: 08/18/2016] [Indexed: 06/06/2023]
Abstract
Organic multiferroic tunnel junctions based on La0.6 Sr0.4 MnO3 /poly(vinylidene fluoride) (PVDF)/Co structures are fabricated. The tunneling magneto-resistance sign can be changed by electrically switching the ferroelectric polarization of PVDF barrier. It is demonstrated that the spin-polarization of the PVDF/Co spinterface can be actively controlled by tuning the ferroelectric polarization of PVDF. This study opens new functionality in controlling the injection of spin polarization into organic materials via the ferroelectric polarization of the barrier.
Collapse
Affiliation(s)
- Shiheng Liang
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France
| | - Hongxin Yang
- Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble, France CEA, INAC-SPINTEC F-38000 Grenoble, France CNRS, SPINTEC, F-38000, Grenoble, France
| | - Huaiwen Yang
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France
| | - Bingshan Tao
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France
| | - Abdelhak Djeffal
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France
| | - Mairbek Chshiev
- Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble, France CEA, INAC-SPINTEC F-38000 Grenoble, France CNRS, SPINTEC, F-38000, Grenoble, France
| | - Weichuan Huang
- Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Xiaoguang Li
- Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Anthony Ferri
- Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), F-62300, Lens, France
| | - Rachel Desfeux
- Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), F-62300, Lens, France
| | - Stéphane Mangin
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France
| | - Daniel Lacour
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France
| | - Michel Hehn
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France
| | - Olivier Copie
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France
| | - Karine Dumesnil
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France
| | - Yuan Lu
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France
| |
Collapse
|
30
|
Bergeard N, Hehn M, Mangin S, Lengaigne G, Montaigne F, Lalieu MLM, Koopmans B, Malinowski G. Hot-Electron-Induced Ultrafast Demagnetization in Co/Pt Multilayers. Phys Rev Lett 2016; 117:147203. [PMID: 27740830 DOI: 10.1103/physrevlett.117.147203] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2016] [Indexed: 05/23/2023]
Abstract
Using specially engineered structures to tailor the optical absorption in a metallic multilayer, we analyze the magnetization dynamics of a Co/Pt multilayer buried below a thick Cu layer. We demonstrate that hot electrons alone can very efficiently induce ultrafast demagnetization. Simulations based on hot electron ballistic transport implemented within a microscopic model that accounts for local dissipation of angular momentum nicely reproduce the experimental results, ruling out contribution of pure thermal transport.
Collapse
Affiliation(s)
- N Bergeard
- Institut Jean Lamour, CNRS UMR 7198, Universitè de Lorraine, 54506 Vandoeuvre-lès-Nancy, France
| | - M Hehn
- Institut Jean Lamour, CNRS UMR 7198, Universitè de Lorraine, 54506 Vandoeuvre-lès-Nancy, France
| | - S Mangin
- Institut Jean Lamour, CNRS UMR 7198, Universitè de Lorraine, 54506 Vandoeuvre-lès-Nancy, France
| | - G Lengaigne
- Institut Jean Lamour, CNRS UMR 7198, Universitè de Lorraine, 54506 Vandoeuvre-lès-Nancy, France
| | - F Montaigne
- Institut Jean Lamour, CNRS UMR 7198, Universitè de Lorraine, 54506 Vandoeuvre-lès-Nancy, France
| | - M L M Lalieu
- Department of Applied Physics, center for NanoMaterials (cNM) Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - B Koopmans
- Department of Applied Physics, center for NanoMaterials (cNM) Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - G Malinowski
- Institut Jean Lamour, CNRS UMR 7198, Universitè de Lorraine, 54506 Vandoeuvre-lès-Nancy, France
| |
Collapse
|
31
|
Tao BS, Yang HX, Zuo YL, Devaux X, Lengaigne G, Hehn M, Lacour D, Andrieu S, Chshiev M, Hauet T, Montaigne F, Mangin S, Han XF, Lu Y. Publisher's Note: Long-Range Phase Coherence in Double-Barrier Magnetic Tunnel Junctions with a Large Thick Metallic Quantum Well [Phys. Rev. Lett. 115, 157204 (2015)]. Phys Rev Lett 2015; 115:249903. [PMID: 26705664 DOI: 10.1103/physrevlett.115.249903] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2015] [Indexed: 06/05/2023]
Abstract
This corrects the article DOI: 10.1103/PhysRevLett.115.157204.
Collapse
|
32
|
Tao BS, Yang HX, Zuo YL, Devaux X, Lengaigne G, Hehn M, Lacour D, Andrieu S, Chshiev M, Hauet T, Montaigne F, Mangin S, Han XF, Lu Y. Long-Range Phase Coherence in Double-Barrier Magnetic Tunnel Junctions with a Large Thick Metallic Quantum Well. Phys Rev Lett 2015; 115:157204. [PMID: 26550750 DOI: 10.1103/physrevlett.115.157204] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2015] [Indexed: 06/05/2023]
Abstract
Double-barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallic QWs have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QWs up to 12 nm thick and at room temperature in fully epitaxial double MgAlO_{x} barrier magnetic tunnel junctions. The electron phase coherence displayed in this QW is of unprecedented quality because of a homogenous interface phase shift due to the small lattice mismatch at the Fe-MgAlO_{x} interface. The physical understanding of the critical role of interface strain on QW phase coherence will greatly promote the development of spin-dependent quantum resonant tunneling applications.
Collapse
Affiliation(s)
- B S Tao
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| | - H X Yang
- Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble, France; CEA, INAC-SPINTEC, F-38000 Grenoble, France and CNRS, SPINTEC, F-38000 Grenoble, France
| | - Y L Zuo
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| | - X Devaux
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| | - G Lengaigne
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| | - M Hehn
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| | - D Lacour
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| | - S Andrieu
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| | - M Chshiev
- Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble, France; CEA, INAC-SPINTEC, F-38000 Grenoble, France and CNRS, SPINTEC, F-38000 Grenoble, France
| | - T Hauet
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| | - F Montaigne
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| | - S Mangin
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| | - X F Han
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Y Lu
- Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandœuvre-lès-Nancy, France
| |
Collapse
|
33
|
Zhou X, Ma L, Shi Z, Fan WJ, Evans RFL, Zheng JG, Chantrell RW, Mangin S, Zhang HW, Zhou SM. Mapping motion of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers. Sci Rep 2015; 5:9183. [PMID: 25777540 PMCID: PMC4361867 DOI: 10.1038/srep09183] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/12/2014] [Accepted: 02/23/2015] [Indexed: 11/09/2022] Open
Abstract
In this work, disordered-IrMn3/insulating-Y3Fe5O12 exchange-biased bilayers are studied. The behavior of the net magnetic moment ΔmAFM in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The ΔmAFM is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis loss are induced by partial rotation and irreversible switching of the ΔmAFM. In the athermal training effect, the state of the ΔmAFM cannot be recovered after one cycle of hysteresis loop. This work highlights the fundamental role of the ΔmAFM in the exchange bias and facilitates the manipulation of antiferromagnetic spintronic devices.
Collapse
Affiliation(s)
- X Zhou
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - L Ma
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Z Shi
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - W J Fan
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - R F L Evans
- Department of Physics, University of York, York YO10 5DD, United Kingdom
| | - Jian-Guo Zheng
- The Laboratory for Electron and X-ray Instrumentation, Calit2, University of California, Irvine, CA 92697-2800, USA
| | - R W Chantrell
- Department of Physics, University of York, York YO10 5DD, United Kingdom
| | - S Mangin
- Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine- boulevard des aiguillettes, BP 70239, Vandoeuvre cedex F-54506, France
| | - H W Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - S M Zhou
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| |
Collapse
|
34
|
Lambert CH, Mangin S, Varaprasad BSDCS, Takahashi YK, Hehn M, Cinchetti M, Malinowski G, Hono K, Fainman Y, Aeschlimann M, Fullerton EE. All-optical control of ferromagnetic thin films and nanostructures. Science 2014; 345:1337-40. [DOI: 10.1126/science.1253493] [Citation(s) in RCA: 437] [Impact Index Per Article: 43.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Affiliation(s)
- C-H. Lambert
- Center for Magnetic Recording Research, University of California San Diego, La Jolla, CA 92093-0401, USA
- Institut Jean Lamour, UMR CNRS 7198–Université de Lorraine–BP 70239, F-54506 Vandoeuvre, France
| | - S. Mangin
- Center for Magnetic Recording Research, University of California San Diego, La Jolla, CA 92093-0401, USA
- Institut Jean Lamour, UMR CNRS 7198–Université de Lorraine–BP 70239, F-54506 Vandoeuvre, France
| | | | - Y. K. Takahashi
- Magnetic Materials Unit, National Institute for Materials Science, Tsukuba 305-0047, Japan
| | - M. Hehn
- Institut Jean Lamour, UMR CNRS 7198–Université de Lorraine–BP 70239, F-54506 Vandoeuvre, France
| | - M. Cinchetti
- Department of Physics and Research Center OPTIMAS, University of Kaiserslautern, Erwin Schroedinger Strasse 46, 67663 Kaiserslautern, Germany
| | - G. Malinowski
- Institut Jean Lamour, UMR CNRS 7198–Université de Lorraine–BP 70239, F-54506 Vandoeuvre, France
| | - K. Hono
- Magnetic Materials Unit, National Institute for Materials Science, Tsukuba 305-0047, Japan
| | - Y. Fainman
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093-0401, USA
| | - M. Aeschlimann
- Department of Physics and Research Center OPTIMAS, University of Kaiserslautern, Erwin Schroedinger Strasse 46, 67663 Kaiserslautern, Germany
| | - E. E. Fullerton
- Center for Magnetic Recording Research, University of California San Diego, La Jolla, CA 92093-0401, USA
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093-0401, USA
| |
Collapse
|
35
|
Mangin S, Gottwald M, Lambert CH, Steil D, Uhlíř V, Pang L, Hehn M, Alebrand S, Cinchetti M, Malinowski G, Fainman Y, Aeschlimann M, Fullerton EE. Engineered materials for all-optical helicity-dependent magnetic switching. Nat Mater 2014; 13:286-92. [PMID: 24531398 DOI: 10.1038/nmat3864] [Citation(s) in RCA: 141] [Impact Index Per Article: 14.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2013] [Accepted: 12/13/2013] [Indexed: 05/23/2023]
Abstract
The possibility of manipulating magnetic systems without applied magnetic fields have attracted growing attention over the past fifteen years. The low-power manipulation of the magnetization, preferably at ultrashort timescales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization in engineered magnetic materials. We demonstrate that all-optical helicity-dependent switching (AO-HDS) can be observed not only in selected rare earth-transition metal (RE-TM) alloy films but also in a much broader variety of materials, including RE-TM alloys, multilayers and heterostructures. We further show that RE-free Co-Ir-based synthetic ferrimagnetic heterostructures designed to mimic the magnetic properties of RE-TM alloys also exhibit AO-HDS. These results challenge present theories of AO-HDS and provide a pathway to engineering materials for future applications based on all-optical control of magnetic order.
Collapse
Affiliation(s)
- S Mangin
- 1] Center for Magnetic Recording Research, University of California San Diego La Jolla, California 92093-0401 USA [2] Institut Jean Lamour, UMR CNRS 7198 - Université de Lorraine - boulevard des aiguillettes BP 70239, Vandoeuvre cedex F-54506 France
| | - M Gottwald
- Center for Magnetic Recording Research, University of California San Diego La Jolla, California 92093-0401 USA
| | - C-H Lambert
- 1] Center for Magnetic Recording Research, University of California San Diego La Jolla, California 92093-0401 USA [2] Institut Jean Lamour, UMR CNRS 7198 - Université de Lorraine - boulevard des aiguillettes BP 70239, Vandoeuvre cedex F-54506 France
| | - D Steil
- Department of Physics and Research Center OPTIMAS University of Kaiserslautern Erwin Schroedinger Str. 46 Kaiserslautern D-67663 Germany
| | - V Uhlíř
- Center for Magnetic Recording Research, University of California San Diego La Jolla, California 92093-0401 USA
| | - L Pang
- Department of Electrical and Computer Engineering, University of California San Diego La Jolla, California 92093-0401 USA
| | - M Hehn
- Institut Jean Lamour, UMR CNRS 7198 - Université de Lorraine - boulevard des aiguillettes BP 70239, Vandoeuvre cedex F-54506 France
| | - S Alebrand
- Department of Physics and Research Center OPTIMAS University of Kaiserslautern Erwin Schroedinger Str. 46 Kaiserslautern D-67663 Germany
| | - M Cinchetti
- Department of Physics and Research Center OPTIMAS University of Kaiserslautern Erwin Schroedinger Str. 46 Kaiserslautern D-67663 Germany
| | - G Malinowski
- 1] Institut Jean Lamour, UMR CNRS 7198 - Université de Lorraine - boulevard des aiguillettes BP 70239, Vandoeuvre cedex F-54506 France [2] Laboratoire de Physique des Solides, Université Paris-Sud, CNRS UMR 8502 Orsay 91405 France
| | - Y Fainman
- Department of Electrical and Computer Engineering, University of California San Diego La Jolla, California 92093-0401 USA
| | - M Aeschlimann
- Department of Physics and Research Center OPTIMAS University of Kaiserslautern Erwin Schroedinger Str. 46 Kaiserslautern D-67663 Germany
| | - E E Fullerton
- 1] Center for Magnetic Recording Research, University of California San Diego La Jolla, California 92093-0401 USA [2] Department of Electrical and Computer Engineering, University of California San Diego La Jolla, California 92093-0401 USA
| |
Collapse
|
36
|
Lin W, Hehn M, Chaput L, Negulescu B, Andrieu S, Montaigne F, Mangin S. Giant spin-dependent thermoelectric effect in magnetic tunnel junctions. Nat Commun 2012; 3:744. [DOI: 10.1038/ncomms1748] [Citation(s) in RCA: 104] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2011] [Accepted: 02/13/2012] [Indexed: 11/09/2022] Open
|
37
|
Benezra V, Mangin S, Treska M, Spector M, Hunter G, Hobbs L. Microstructural Investigation of the Oxide Scale on Zr-2.5NB and its Interface with the Alloy Substrate. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-550-337] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractOxidized Zr-2.5Nb is being developed as an articular bearing surface for the femoral component in total joint arthroplasty. It has so far demonstrated superior wear performance against ultrahigh molecular weight polyethylene (UHMWPE) with respect to traditional articulating materials such as Co-Cr-Mo alloys. In this investigation, we used thermogravimetric analysis, transmission electron microscopy, and in situ x-ray diffraction techniques to study the microstructure and stress state of the oxide scale grown on Zr-2.5Nb.The oxidation temperature not only determines the kinetics of oxidation but the morphology of the various oxidation products. We have identified the oxidation products of both phases of the two phase alloy and correlated them with the original alloy microstructure. These include not only monoclinic zirconia but also small amounts of tetragonal zirconia and a mixed oxide phase combining both zirconium and niobium. The alloy microstructure both influences the final oxidation products and is reflected in the microstructure of the oxide. The oxide scale itself has a predominantly columnar microstructure which extends from the oxide/metal interface to the outer surface of the oxide. In situ x-ray diffraction measurements revealed that the oxide scale is stressed in compression following cooling and exhibits strong crystallographic texture. The oxide/metal interface is continuous, without pores or voids which might be detrimental to oxide adhesion. In addition, we have identified a phase which develops at the interface between the beta-zirconium grains and the oxide. We have also identified amorphous regions within the oxide scale which serve as sinks for silicon and other impurity elements found in the alloy.
Collapse
|
38
|
Gottwald M, Girod S, Andrieu S, Mangin S. Tuneable perpendicular magnetic anisotropy in single crystal [Co/Ni](111) superlattices. ACTA ACUST UNITED AC 2010. [DOI: 10.1088/1757-899x/12/1/012018] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
|
39
|
Fullerton EE, Mangin S. Origin of the magneto-thermogalvanic voltage in cluster-assembled metallic nanostructures. Nat Mater 2008; 7:257-258. [PMID: 18354402 DOI: 10.1038/nmat2153a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
|
40
|
Ravelosona D, Mangin S, Lemaho Y, Katine JA, Terris BD, Fullerton EE. Domain wall creation in nanostructures driven by a spin-polarized current. Phys Rev Lett 2006; 96:186604. [PMID: 16712386 DOI: 10.1103/physrevlett.96.186604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2006] [Indexed: 05/09/2023]
Abstract
We report on current-driven magnetization reversal in nanopillars with elements having perpendicular magnetic anisotropy. Whereas only the two uniform magnetization states are available under the action of a magnetic field, we observed current-induced Bloch domain walls in pillars as small as 50 x 100 nm(2). This domain wall state can be further controlled by current to restore the uniform states. The ability to nucleate and manipulate domain walls by a current gives insight into the reversal mechanisms of small nanoelements and provides new prospects for ultrahigh density spintronic devices.
Collapse
Affiliation(s)
- D Ravelosona
- Hitachi Global Storage Technologies, San Jose Research Center, 650 Harry Road, San Jose, California 95120, USA
| | | | | | | | | | | |
Collapse
|
41
|
Hauet T, Borchers JA, Mangin P, Henry Y, Mangin S. Training effect in an exchange bias system: the role of interfacial domain walls. Phys Rev Lett 2006; 96:067207. [PMID: 16606043 DOI: 10.1103/physrevlett.96.067207] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2005] [Indexed: 05/08/2023]
Abstract
Polarized neutron reflectivity (PNR) is used to obtain the magnetic depth profile of an antiferromagnetically coupled ferrimagnetic/ferrimagnetic bilayer, Gd40Fe60/Tb12Fe88. This system shows a transition from positive to negative exchange bias field H(E) as the cooling field H(cf) is increased from small to large positive value. It also exhibits training behavior upon field cycling which affects H(E) and the coercive field H(C). From the PNR measurements at room temperature and at 15 K, we confirm that the magnetic configuration inside the TbFe layer is frozen when the sample is cooled in various H(cf). The thickness and pitch of the magnetic twist inside the TbFe layer depend on H(cf) and give rise to the observed differences in the bias field. Irreversible reorganization of the TbFe magnetization at the interface occurs upon GdFe magnetization reversal and is found to explain the training effect as well as the overall reduction in coercivity.
Collapse
Affiliation(s)
- T Hauet
- LPM, Université Henri Poincaré-Nancy I, Boîte Postale 239, F-54506 Vandoeuvre Cedex, France
| | | | | | | | | |
Collapse
|
42
|
Guinet C, Servera N, Mangin S, Georges JY, Lacroix A. Change in plasma cortisol and metabolites during the attendance period ashore in fasting lactating subantarctic fur seals. Comp Biochem Physiol A Mol Integr Physiol 2004; 137:523-31. [PMID: 15123189 DOI: 10.1016/j.cbpb.2003.11.006] [Citation(s) in RCA: 25] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2003] [Revised: 11/10/2003] [Accepted: 11/11/2003] [Indexed: 11/19/2022]
Abstract
Lactating fur seals (Arctocephalus tropicalis) alternate foraging trips at sea and pup attendance periods ashore. During the onshore nursing periods, lactating females do not have access to food and meet both their own metabolic requirements and milk production from their body reserve. Blood and milk samples were collected from females captured soon after their arrival ashore from a foraging trip and before their departure. Milk lipid but not milk protein content was positively related to the body condition index (BCI) of the female. During the 4-day attendance period ashore, females lost body mass, and plasma cortisol levels increased, whereas plasma urea concentration decreased and beta-hydroxybutyrate (beta-OHB) remained unchanged. The increase in cortisol level took place while blood urea concentration decreased and beta-OHB remained at a low level suggesting that it was independent from the transition from phase II to phase III that is indicative of the depletion of lipid body store as described in penguins. Thus, our results suggest that the increase in cortisol level in relation to decreasing BCI may either contribute to the mobilization of protein stores to ensure milk production when easily mobilized stores are used and/or could act as a re-feeding signal which is triggered well before females have depleted their body store.
Collapse
Affiliation(s)
- C Guinet
- Centre d'Etudes Biologiques de Chizé, Centre National de la Recherche Scientifique (CNRS) UPR 1934, 79 360 Villiers en Bois, France.
| | | | | | | | | |
Collapse
|
43
|
Bellouard C, Rapp HD, George B, Mangin S, Marchal G, Ousset JC. Negative spin-valve effect in Co65Fe35/Ag/(Co65Fe35)50Gd50 trilayers. Phys Rev B Condens Matter 1996; 53:5082-5085. [PMID: 9984095 DOI: 10.1103/physrevb.53.5082] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|