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Peng Y, Salomoni D, Malinowski G, Zhang W, Hohlfeld J, Buda-Prejbeanu LD, Gorchon J, Vergès M, Lin JX, Lacour D, Sousa RC, Prejbeanu IL, Mangin S, Hehn M. In-plane reorientation induced single laser pulse magnetization reversal. Nat Commun 2023; 14:5000. [PMID: 37591992 PMCID: PMC10435580 DOI: 10.1038/s41467-023-40721-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 08/08/2023] [Indexed: 08/19/2023] Open
Abstract
Single Pulse All Optical Switching represents the ability to reverse the magnetization of a nanostructure using a femtosecond single laser pulse without any applied field. Since the first switching experiments carried out on GdFeCo ferrimagnets, this phenomena has been only recently extended to a few other materials, MnRuGa alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse switching can be obtained for a large range of rare earth-transition metal multilayers, making this phenomenon much more general. Surprisingly, the threshold fluence for switching is observed to be independent of the laser pulse duration. Moreover, at high laser intensities, concentric ring domain structures are induced. These striking features contrast to those observed in Gd based materials pointing towards a different reversal mechanism. Concomitant with the demonstration of an in-plane magnetization reorientation, a precessional reversal mechanism explains all the observed features.
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Affiliation(s)
- Y Peng
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - D Salomoni
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - G Malinowski
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France.
| | - W Zhang
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, 230013, Hefei, China
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, China
| | - J Hohlfeld
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - L D Buda-Prejbeanu
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - J Gorchon
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - M Vergès
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - J X Lin
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - D Lacour
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - R C Sousa
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - I L Prejbeanu
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - S Mangin
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - M Hehn
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France.
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Jeudy V, Mougin A, Bustingorry S, Savero Torres W, Gorchon J, Kolton AB, Lemaître A, Jamet JP. Universal Pinning Energy Barrier for Driven Domain Walls in Thin Ferromagnetic Films. Phys Rev Lett 2016; 117:057201. [PMID: 27517790 DOI: 10.1103/physrevlett.117.057201] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2016] [Indexed: 06/06/2023]
Abstract
We report a comparative study of magnetic field driven domain wall motion in thin films made of different magnetic materials for a wide range of field and temperature. The full thermally activated creep motion, observed below the depinning threshold, is shown to be described by a unique universal energy barrier function. Our findings should be relevant for other systems whose dynamics can be modeled by elastic interfaces moving on disordered energy landscapes.
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Affiliation(s)
- V Jeudy
- Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay Cedex, France
| | - A Mougin
- Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay Cedex, France
| | - S Bustingorry
- CONICET, Centro Atómico Bariloche, 8400 San Carlos de Bariloche, Río Negro, Argentina
| | - W Savero Torres
- Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay Cedex, France
| | - J Gorchon
- Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay Cedex, France
| | - A B Kolton
- CONICET, Centro Atómico Bariloche, 8400 San Carlos de Bariloche, Río Negro, Argentina
| | - A Lemaître
- Laboratoire de Photonique et de Nanostructures, CNRS, Université Paris-Saclay, 91460 Marcoussis, France
| | - J-P Jamet
- Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay Cedex, France
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Gorchon J, Bustingorry S, Ferré J, Jeudy V, Kolton AB, Giamarchi T. Pinning-dependent field-driven domain wall dynamics and thermal scaling in an ultrathin Pt/Co/Pt magnetic film. Phys Rev Lett 2014; 113:027205. [PMID: 25062227 DOI: 10.1103/physrevlett.113.027205] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2013] [Indexed: 06/03/2023]
Abstract
Magnetic-field-driven domain wall motion in an ultrathin Pt/Co(0.45 nm)/Pt ferromagnetic film with perpendicular anisotropy is studied over a wide temperature range. Three different pinning dependent dynamical regimes are clearly identified: the creep, the thermally assisted flux flow, and the depinning, as well as their corresponding crossovers. The wall elastic energy and microscopic parameters characterizing the pinning are determined. Both the extracted thermal rounding exponent at the depinning transition, ψ=0.15, and the Larkin length crossover exponent, ϕ=0.24, fit well with the numerical predictions.
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Affiliation(s)
- J Gorchon
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France
| | - S Bustingorry
- CONICET, Centro Atómico Bariloche, 8400 San Carlos de Bariloche, Río Negro, Argentina
| | - J Ferré
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France
| | - V Jeudy
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France and Université Cergy-Pontoise, 95000 Cergy-Pontoise, France
| | - A B Kolton
- CONICET, Centro Atómico Bariloche, 8400 San Carlos de Bariloche, Río Negro, Argentina
| | - T Giamarchi
- DPMC-MaNEP, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
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Gorchon J, Curiale J, Lemaître A, Moisan N, Cubukcu M, Malinowski G, Ulysse C, Faini G, von Bardeleben HJ, Jeudy V. Stochastic current-induced magnetization switching in a single semiconducting ferromagnetic layer. Phys Rev Lett 2014; 112:026601. [PMID: 24484033 DOI: 10.1103/physrevlett.112.026601] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2013] [Indexed: 06/03/2023]
Abstract
We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
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Affiliation(s)
- J Gorchon
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France
| | - J Curiale
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France and Laboratoire de Photonique et de Nanostructures, CNRS, UPR 20, 91460 Marcoussis, France and Consejo Nacional de Investigaciones Científicas y Técnicas, Centro Atómico Bariloche-Comisíon Nacional de Energía Atómica, Avenida Bustillo 9500, 8400 San Carlos de Bariloche, Río Negro, Argentina
| | - A Lemaître
- Laboratoire de Photonique et de Nanostructures, CNRS, UPR 20, 91460 Marcoussis, France
| | - N Moisan
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France
| | - M Cubukcu
- Institut des nanosciences de Paris, Université Pierre et Marie Curie, CNRS, UMR7588, 75252 Paris, France
| | - G Malinowski
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France
| | - C Ulysse
- Laboratoire de Photonique et de Nanostructures, CNRS, UPR 20, 91460 Marcoussis, France
| | - G Faini
- Laboratoire de Photonique et de Nanostructures, CNRS, UPR 20, 91460 Marcoussis, France
| | - H J von Bardeleben
- Institut des nanosciences de Paris, Université Pierre et Marie Curie, CNRS, UMR7588, 75252 Paris, France
| | - V Jeudy
- Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France and Université Cergy-Pontoise, 95000 Cergy-Pontoise, France
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