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Peng Y, Salomoni D, Malinowski G, Zhang W, Hohlfeld J, Buda-Prejbeanu LD, Gorchon J, Vergès M, Lin JX, Lacour D, Sousa RC, Prejbeanu IL, Mangin S, Hehn M. In-plane reorientation induced single laser pulse magnetization reversal. Nat Commun 2023; 14:5000. [PMID: 37591992 PMCID: PMC10435580 DOI: 10.1038/s41467-023-40721-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 08/08/2023] [Indexed: 08/19/2023] Open
Abstract
Single Pulse All Optical Switching represents the ability to reverse the magnetization of a nanostructure using a femtosecond single laser pulse without any applied field. Since the first switching experiments carried out on GdFeCo ferrimagnets, this phenomena has been only recently extended to a few other materials, MnRuGa alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse switching can be obtained for a large range of rare earth-transition metal multilayers, making this phenomenon much more general. Surprisingly, the threshold fluence for switching is observed to be independent of the laser pulse duration. Moreover, at high laser intensities, concentric ring domain structures are induced. These striking features contrast to those observed in Gd based materials pointing towards a different reversal mechanism. Concomitant with the demonstration of an in-plane magnetization reorientation, a precessional reversal mechanism explains all the observed features.
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Affiliation(s)
- Y Peng
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - D Salomoni
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - G Malinowski
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France.
| | - W Zhang
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
- Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute, Beihang University, 230013, Hefei, China
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, China
| | - J Hohlfeld
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - L D Buda-Prejbeanu
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - J Gorchon
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - M Vergès
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - J X Lin
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - D Lacour
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - R C Sousa
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - I L Prejbeanu
- Univ Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000, Grenoble, France
| | - S Mangin
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - M Hehn
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France.
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