Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers

Synthetic antiferromagnetic structures can exhibit the advantages of high velocity similarly to antiferromagnets with the additional benefit of being imaged and read-out through techniques applied to ferromagnets. Here, we explore the potential and limits of synthetic antiferromagnets to uncover ways to harness their valuable properties for applications. Two synthetic antiferromagnetic systems have been engineered and systematically investigated to provide an informed basis for creating devices with maximum potential for data storage, logic devices, and skyrmion racetrack memories. The two systems considered are (system 1) CoB/Ir/Pt of N repetitions with Ir inducing the negative coupling between the ferromagnetic layers and (system 2) two ferromagnetically coupled multilayers of CoB/Ir/Pt, coupled together antiferromagnetically with an Ir layer. From the hysteresis, it is found that system 1 shows stable antiferromagnetic interlayer exchange coupling between each magnetic layer up to N = 7. Using Kerr imaging, the two ferromagnetic multilayers in system 2 are shown to undergo separate maze-like switches during hysteresis. Both systems are also studied as a function of temperature and show different behaviors. Micromagnetic simulations predict that in both systems the skyrmion Hall angle is suppressed with the skyrmion velocity five times higher in system 1 than system 2.

Manipulation of Magnetic Skyrmion Density in Continuous Ir/Co/Pt Multilayers

We show that magnetic skyrmions can be stabilised at room temperature in continuous [Ir/Co/Pt]₅ multilayers on SiO₂/Si substrates without the prior application of electric current or magnetic field. While decreasing the Co thickness, a transition of the magnetic domain patterns from worm-like state to separated stripes is observed. The skyrmions are clearly imaged in both states using magnetic force microscopy. The density of skyrmions can be significantly enhanced after applying the "in-plane field procedure". Our results provide means to manipulate magnetic skyrmion density, further allowing for the optimised engineering of skyrmion-based devices.

Pt and CoB trilayer Josephson [Formula: see text] junctions with perpendicular magnetic anisotropy

We report on the electrical transport properties of Nb based Josephson junctions with Pt/Co[Formula: see text]B[Formula: see text]/Pt ferromagnetic barriers. The barriers exhibit perpendicular magnetic anisotropy, which has the main advantage for potential applications over magnetisation in-plane systems of not affecting the Fraunhofer response of the junction. In addition, we report that there is no magnetic dead layer at the Pt/Co[Formula: see text]B[Formula: see text] interfaces, allowing us to study barriers with ultra-thin Co[Formula: see text]B[Formula: see text]. In the junctions, we observe that the magnitude of the critical current oscillates with increasing thickness of the Co[Formula: see text]B[Formula: see text] strong ferromagnetic alloy layer. The oscillations are attributed to the ground state phase difference across the junctions being modified from zero to [Formula: see text]. The multiple oscillations in the thickness range [Formula: see text] nm suggests that we have access to the first zero-[Formula: see text] and [Formula: see text]-zero phase transitions. Our results fuel the development of low-temperature memory devices based on ferromagnetic Josephson junctions.