Plasmon-Polaron Coupling in Conjugated Polymer on Infrared Nanoantennas

We propose and demonstrate a novel type of coupling between polarons in a conjugated polymer and localized surface plasmons in infrared (IR) nanoantennas. The near-field interaction between plasmons and polarons is revealed by polarized photoinduced absorption measurements, probing mid-IR polaron transitions, and infrared-active vibrational modes of the polymer, which directly gauge the density of photogenerated charge carriers. This work proves the possibility of tuning the polaronic properties of organic semiconductors with plasmonic nanostructures.

Dichroic spin-valley photocurrent in monolayer molybdenum disulphide

The aim of valleytronics is to exploit confinement of charge carriers in local valleys of the energy bands of semiconductors as an additional degree of freedom in optoelectronic devices. Thanks to strong direct excitonic transitions in spin-coupled K valleys, monolayer molybdenum disulphide is a rapidly emerging valleytronic material, with high valley polarization in photoluminescence. Here we elucidate the excitonic physics of this material by light helicity-dependent photocurrent studies of phototransistors. We demonstrate that large photocurrent dichroism (up to 60%) can also be achieved in high-quality molybdenum disulphide monolayers grown by chemical vapour deposition, due to the circular photogalvanic effect on resonant excitations. This opens up new opportunities for valleytonic applications in which selective control of spin-valley-coupled photocurrents can be used to implement polarization-sensitive light-detection schemes or integrated spintronic devices, as well as biochemical sensors operating at visible frequencies.

Diurnal temperature cycle deduced from extreme daily temperatures and impact over a surface reanalysis system

Abstract. Due to the evolution of the observation network, hourly 2 m temperature analysis performed by reanalysis systems shows temporal inhomogeneities. The observation network gap is less present for extreme daily temperature observations. In order to reduce inhomogeneities and enable a climatological use of temperature analysis, information from extreme temperatures could be useful. In this study, the diurnal temperature cycle has been reconstructed for stations which only record extreme temperatures. These new "pseudo" hourly temperature observations are then provided to the analysis system. Two methods have been used to deduce hourly temperatures from extremes and compared to real observations. The results have shown that using those new pseudo-observations as an input for two different reanalysis systems enables reducing the bias in temperature analysis.

Lead iodide perovskite light-emitting field-effect transistor

Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH₃NH₃PbI₃) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH₃NH₃PbI₃ light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

Hybrid organic–inorganic perovskites have shown great potential for use in optoelectronic applications. Here, the authors create solution-processed lead iodide perovskite light-emitting field-effect transistors and demonstrate both ambipolar behaviour and gate-assisted electroluminescence.

Coherent perfect absorption in deeply subwavelength films in the single-photon regime

The technologies of heating, photovoltaics, water photocatalysis and artificial photosynthesis depend on the absorption of light and novel approaches such as coherent absorption from a standing wave promise total dissipation of energy. Extending the control of absorption down to very low light levels and eventually to the single-photon regime is of great interest and yet remains largely unexplored. Here we demonstrate the coherent absorption of single photons in a deeply subwavelength 50% absorber. We show that while the absorption of photons from a travelling wave is probabilistic, standing wave absorption can be observed deterministically, with nearly unitary probability of coupling a photon into a mode of the material, for example, a localized plasmon when this is a metamaterial excited at the plasmon resonance. These results bring a better understanding of the coherent absorption process, which is of central importance for light harvesting, detection, sensing and photonic data processing applications.

Interfacial Charge Transfer Anisotropy in Polycrystalline Lead Iodide Perovskite Films

Solar cells based on organic-inorganic lead iodide perovskite (CH3NH3PbI3) exhibit remarkably high power conversion efficiency (PCE). One of the key issues in solution-processed films is that often the polycrystalline domain orientation is not well-defined, which makes it difficult to predict energy alignment and charge transfer efficiency. Here we combine ab initio calculations and photoelectron spectroscopy to unravel the electronic structure and charge redistribution at the interface between different surfaces of CH3NH3PbI3 and typical organic hole acceptor Spiro-OMeTAD and electron acceptor PCBM. We find that both hole and electron interfacial transfer depend strongly on the CH3NH3PbI3 surface orientation: while the (001) and (110) surfaces tend to favor hole injection to Spiro-OMeTAD, the (100) surface facilitates electron transfer to PCBM due to surface delocalized charges and hole/electron accumulation at the CH3NH3PbI3/organic interfaces. Molecular dynamic simulations indicate that this is due to strong orbital interactions under thermal fluctuations at room temperature, suggesting the possibility to further improve charge separation and extraction in perovskite-based solar cells by controlling perovskite film crystallization and surface orientation.

Plasmonic nanoclocks

Plasmonic spectra of "nanoclock" metamaterials can be topologically mapped on a torus. We manufactured arrays of such a metamaterial with different "time" shown on the clocks and demonstrated that the near-infrared spectra of the nanostructures can be predictably tuned exhibiting a rich series of high-order plasmon modes, from the electric dipole to exotic electric triakontadipole that could be engaged in chemo/biosensor applications.

GaAs/AlGaAs nanowire photodetector

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge separation, enhancing photosensitivity. The spectral photoconductive response shows that the nanowire supports resonant optical modes in the near-infrared region, which lead to large photocurrent density in agreement with the predictions of electromagnetic and transport computational models. The single nanowire photodetector shows a remarkable peak photoresponsivity of 0.57 A/W, comparable to large-area planar GaAs photodetectors on the market, and a high detectivity of 7.2 × 10(10) cm·Hz(1/2)/W at λ = 855 nm. This is promising for the design of a new generation of highly sensitive single nanowire photodetectors by controlling the optical mode confinement, bandgap, density of states, and electrode engineering.

Ambipolar Charge Photogeneration and Transfer at GaAs/P3HT Heterointerfaces

Recent work on hybrid photovoltaic systems based on conjugated polymers and III-V compound semiconductors with relatively high power conversion efficiency revived fundamental questions regarding the nature of charge separation and transfer at the interface between organic and inorganic semiconductors with different degrees of delocalization. In this work, we studied photoinduced charge generation and interfacial transfer dynamics in a prototypical photovoltaic n-type GaAs (111)B and poly(3-hexyl-thiophene) (P3HT) bilayer system. Ultrafast spectroscopy and density functional theory calculations indicate the coexistence of electron and hole transfer at the GaAs/P3HT interface, leading to the generation of long-lived species and photoinduced absorption upon creation of hybrid interfacial states. This opens up new avenues for the use of low-dimensional III-V compounds (e.g., nanowires or quantum dots) in hybrid organic/inorganic photovoltaics, where advanced bandgap and density of states engineering may also be exploited as design parameters.

Computing matrix inversion with optical networks

With this paper we bring about a discussion on the computing potential of complex optical networks and provide experimental demonstration that an optical fiber network can be used as an analog processor to calculate matrix inversion. A 3x3 matrix is inverted as a proof-of-concept demonstration using a fiber network containing three nodes and operating at telecomm wavelength. For an NxN matrix, the overall solving time (including setting time of the matrix elements and calculation time of inversion) scales as O(N(2)), whereas matrix inversion by most advanced computer algorithms requires ~O(N(2.37)) computational time. For well-conditioned matrices, the error of the inversion performed optically is found to be around 3%, limited by the accuracy of measurement equipment.

Two-photon-induced singlet fission in rubrene single crystal

The two-photon-induced singlet fission was observed in rubrene single crystal and studied by use of femtosecond pump-probe spectroscopy. The location of two-photon excited states was obtained from the nondegenerate two-photon absorption (TPA) spectrum. Time evolution of the two-photon-induced transient absorption spectra reveals the direct singlet fission from the two-photon excited states. The TPA absorption coefficient of rubrene single crystal is 52 cm∕GW at 740 nm, as obtained from Z-scan measurements. Quantum chemical calculations based on time-dependent density functional theory support our experimental data.

Enhancing photocurrent transient spectroscopy by electromagnetic modeling

The shape and duration of photocurrent transients generated by a photoconductive switch depend on both the intrinsic response of the active material and the geometry of the transmission line structure. The present electromagnetic model decouples both shape forming contributions. In contrast to previously published work, it accounts for the particular operating mode of transient spectroscopy. The objective is to increase the time resolution by two approaches, by optimizing structural response and by deconvolving it from experimental data. The switch structure is represented by an effective transimpedance onto which the active material acts as current generator. As proof of concept, the response of a standard microstrip switch is modeled and deconvolved from experimental data acquired in GaAs, yielding a single exponential material response and hence supporting the validity of the approach. Beyond compensating for the response deterioration by the structure, switch architectures can be a priori optimized with respect to frequency response. As an example, it is shown that a microstrip gap that can be deposited on materials incompatible with standard lithography reduces pulse broadening by an order of magnitude if it is provided with transitions to coplanar access lines.

Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission

A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10³ cm⁻¹) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.

Anisotropic photonic properties of III-V nanowires in the zinc-blende and wurtzite phase

Some critical aspects of the anisotropic absorption and emission properties of quasi one-dimensional structures are reviewed in the context of III-V compound semiconductor nanowires. The unique optical and electronic properties of III-V nanowires stem from the combination of dielectric effects due to their large aspect ratio, and their specific crystallographic structure which can differ significantly from the bulk case. The growth conditions leading to single-crystal nanowires with either zinc blende or wurtzite phase are first presented. Dipole selection rules for interband transitions in common III-V compounds are then summarized for the two different phases, and corroborated by ab initio Density Functional Theory calculations of the oscillator strength. The optical anisotropy is discussed considering both the effect of refractive index mismatch between the nanowire and its surroundings and the polarization of the emitting dipoles set by the nanowire crystallographic structure and orientation. Finite Difference Time Domain simulations are finally employed to illustrate the influence of the emitting dipole orientation and the nanowire diameter on the distribution of radiation in the far-field. The importance of the correlation between structural and optoelectronic properties is highlighted in view of potential applications in future nanowire photonics.

Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions

New insights into understanding and controlling the intriguing phenomena of spontaneous merging (kissing) and the self-assembly of monolithic Y- and T-junctions is demonstrated in the metal-organic chemical vapor deposition growth of GaAs nanowires. High-resolution transmission electron microscopy for determining polar facets was coupled to electrostatic-mechanical modeling and position-controlled synthesis to identify nanowire diameter, length, and pitch, leading to junction formation. When nanowire patterns are designed so that the electrostatic energy resulting from the interaction of polar surfaces exceeds the mechanical energy required to bend the nanowires to the point of contact, their fusion can lead to the self-assembly of monolithic junctions. Understanding and controlling this phenomenon is a great asset for the realization of dense arrays of vertical nanowire devices and opens up new ways toward the large scale integration of nanowire quantum junctions or nanowire intracellular probes.

Nanowire photodetectors

The use of nanowires and nanowire structures as photodetectors is an emerging research topic. Despite the large amount of reports on nanowire photoresponse that appeared in the literature over the last decade, the mechanism leading to high photosensitivity and photoconductive gain in high aspect ratio nanostructures has been elucidated only recently. Novel device architectures integrated in single nanowire devices are also being actively studied and developed. In this article, the general nanowire photodetector concepts are reviewed, together with a detailed description of the physical phenomena occurring in nanowire photoconductors and phototransistors, with some examples from recent experimental results obtained in our groups. An outlook on future directions toward the use of semiconductor nanowire photoconductors as intrachip interconnects, single-photon detectors, and image sensors, is also given.

Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection

Catalyst-free, direct heteroepitaxial growth of vertical InAs nanowires on Si(111) substrates was accomplished over a large area by metal-organic chemical vapor deposition. Nanowires showed very uniform diameters and a zinc blende crystal structure. The heterojunctions formed at the interface between the n-type InAs nanowires and the p-type Si substrate were exploited to fabricate vertical array photodiode devices which showed an excellent rectification ratio and low reverse leakage current. Temperature-dependent current transport across the heterojunctions was studied theoretically and experimentally in the dark and under AM 1.5 illumination. When operated in photovoltaic mode, the open-circuit voltage was found to increase linearly with decreasing temperature while the energy conversion efficiency changed nonmonotonically with a maximum of 2.5% at 110 K. Modeling of the nanowire/substrate heterojunctions showed good agreement with the experimental observations, and allowed determining the conduction band offset between the InAs nanowires and Si to be 0.10-0.15 eV. The external quantum efficiency and photoresponsivity profiles of the device showed a broad spectral response from the visible to the infrared region, indicating potential applications as a broad band photovoltaic cell or a visible-infrared dual-band photodetector.

A systematic study on the growth of gaas nanowires by metal-organic chemical vapor deposition

The epitaxial growth of GaAs nanowires (NWs) on GaAs(111)B substrates by metal-organic chemical vapor deposition has been systematically investigated as a function of relevant growth parameters, namely, temperature, arsine (AsH3) and trimethyl-gallium (TMGa) flow rates, growth time, and gold nanoparticle catalyst size. When growing in excess As conditions (V/III molar ratios greater than four), the NW growth rate is independent of AsH3 concentration, while it is linearly dependent on TMGa concentration, and it is thermally activated. The NW morphology is primarily affected by the growth temperature, with very uniform NWs growing at around 400 degrees C and severely tapered NWs growing above 500 degrees C. A simple phenomenological expression that allows prediction of the NW growth rate over a wide range of growth parameters has been derived. The growth rate dependence on the seed nanoparticle size has also been investigated, which reveals valuable information on the role of catalyst supersaturation and Ga surface diffusion in the growth mechanism. The NW growth rate is found to be almost independent of Au nanoparticle size down to diameters of approximately 20 nm over a wide range of temperatures and TMGa and AsH3 molar flows. For smaller NW radii, the growth rate becomes size-dependent and is strongly affected by the V/III molar ratio; at relatively low V/III ratios, smaller NWs grow more slowly due to the Gibbs-Thompson effect, while at higher V/III ratios (V/III >50), Ga adatom diffusion becomes the dominant mass-transport mechanism, and smaller NWs grow faster than larger ones. The growth-limiting mechanisms in the above growth regimes are finally discussed, and important quantities such as pyrolysis efficiency of the precursors, supersaturation, and surface diffusion length are deduced by comparing the experimental results with the NW growth rates predicted from first principles.

Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition

Epitaxial growth of vertical GaAs nanowires on Si(111) substrates is demonstrated by metal-organic chemical vapor deposition via a vapor-liquid-solid growth mechanism. Systematic experiments indicate that substrate pretreatment, pregrowth alloying temperature, and growth temperature are all crucial to vertical epitaxial growth. Nanowire growth rate and morphology can be well controlled by the growth temperature, the metal-organic precursor molar fraction, and the molar V/III ratio. The as-grown GaAs nanowires have a predominantly zinc-blende crystal structure along a <111> direction. Crystallographic {111} stacking faults found perpendicular to the growth axis could be almost eliminated via growth at high V/III ratio and low temperature. Single nanowire field effect transistors based on unintentionally doped GaAs nanowires were fabricated and found to display a strong effect of surface states on their transport properties.

ZnO nanowire UV photodetectors with high internal gain

ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.