A novel approach to prepare a tissue engineering decellularized valve scaffold with poly(ethylene glycol)–poly(ε-caprolactone)

The objective of this study was to explore the feasibility of preparing a decellularized valve scaffold with methoxy poly(ethylene glycol)–poly(ε-caprolactone) (MPEG–PCL).

Development of a cellular biosensor system for genotoxicity detection based on Trp53 promoter

OBJECTIVE

To develop a mouse cell biosensor system for the high-throughput genotoxicity detection of chemicals, such as environmental pollutants.

METHOD

We developed a novel reporter vector pGL4-GFP, wherein the firefly luciferase reporter gene in the pGL4.82 vector was replaced by the green fluorescent protein (GFP) gene from the pAcGFP1-N1 vector. To construct the reporter pGL4-p53-GFP (p53 promoter linked to GFP), a fragment containing the p53 gene promoter was generated by amplifying a region from -481 to +180 of mouse genomic DNA isolated from mouse tail tissue. We developed a mouse cell biosensor system for the high-throughput genotoxicity detection of new drugs by stably integrating the reporter plasmid of pGL4-p53-GFP into the mouse embryonic fibroblast cells. Various genotoxic agents were used to treat this biosensor system. The resulting fluorescence was directly observed under a fluorescence microscope, and the GFP protein level was measured through Western blot analysis.

RESULT

The biosensor system was treated with genotoxic agents, such as doxorubicin, cyclophosphamide, and benzo(a)pyrene. The GFP protein expression was significantly increased in cells exposed to genotoxic agents but negatively responded to the non-genotoxic agent dimethyl sulfoxide, thereby proving the specificity and sensitivity of the biosensor system.

CONCLUSION

This novel in vitro biosensor system can be especially useful in genotoxicity detection.

PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction

Resistive switching (RS) devices are commonly believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, polymethylmethacrylate (PMMA) interlayer was introduced at the heterointerface of p-CuSCN hollow nanopyramid arrays and n-ZnO nanorod arrays, resulting in a typical bipolar RS behavior. We propose the mechanism of nanostructure trap-induced space charge polarization modulated by PMMA interlayer. At low reverse bias, PMMA insulator can block charges through the heterointerface, and and trapped states are respectively created on both sides of PMMA, resulting in a high resistance state (HRS) due to wider depletion region. At high reverse bias, however, electrons and holes can cross PMMA interlayer by Fowler-Nordeim tunneling due to a massive tilt of energy band, and then inject into the traps of ZnO and CuSCN, respectively. and trapped states are created, resulting in the formation of degenerate semiconductors on both sides of PMMA. Therefore, quantum tunneling and space charge polarization lead to a low resistance state (LRS). At relatively high forward bias, subsequently, the trapped states of and are recreated due to the opposite injection of charges, resulting in a recovery of HRS. The introduction of insulating interlayer at heterointerface, point a way to develop next-generation nonvolatile memories.

Reducing thermal crosstalk in ten-channel tunable slotted-laser arrays

Given the tight constraints on the wavelength stability of sources in optical networks, the thermal crosstalk between operating devices in a ten-channel thermally-tunable slotted laser array for DWDM applications has been investigated. It was found experimentally the current standard thermal solution with the laser array chip mounted on an AlN carrier does not allow for wavelength stability of ± 25 GHz ( ± 2 K) with a temperature rise of 5 K measured in a device with 100 mA (CW) applied to a neighbouring laser (device spacing = 360 µm). A combined experimental/numerical approach revealed solid state submounts comprising diamond or highly ordered pyrolytic graphite are inadequate to reduce crosstalk below an allowable level. Numerical simulations of advanced cooling technologies reveal a microfluidic enabled substrate would reduce thermal crosstalk between operational devices on the chip to acceptable levels. Critically our simulations show this reduced crosstalk is not at the expense of device tunability as the thermal resistance of individual lasers remains similar for the base and microfluidic cases.

Modulation of surface trap induced resistive switching by electrode annealing in individual PbS micro/nanowire-based devices for resistance random access memory

Bipolar resistive switching (RS) devices are commonly believed as a promising candidate for next generation nonvolatile resistance random access memory (RRAM). Here, two-terminal devices based on individual PbS micro/nanowires with Ag electrodes are constructed, whose electrical transport depends strongly on the abundant surface and bulk trap states in micro/nanostructures. The surface trap states can be filled/emptied effectively at negative/positive bias voltage, respectively, and the corresponding rise/fall of the Fermi level induces a variation in a degenerate/nondegenerate state, resulting in low/high resistance. Moreover, the filling/emptying of trap states can be utilized as RRAM. After annealing, the surface trap state can almost be eliminated completely; while most of the bulk trap states can still remain. In the devices unannealed and annealed at both ends, therefore, the symmetrical back-to-back Fowler-Nordheim tunneling with large ON/OFF resistance ratio and Poole-Frenkel emission with poor hysteresis can be observed under cyclic sweep voltage, respectively. However, a typical bipolar RS behavior can be observed effectively in the devices annealed at one end. The acquirement of bipolar RS and nonvolatile RRAM by the modulation of electrode annealing demonstrates the abundant trap states in micro/nanomaterials will be advantageous to the development of new type electronic components.

Misdiagnosis and long-term outcome of 13 patients with acute thallium poisoning in China

PURPOSE

To analyze clinical feature and evaluate long-term outcome of patients with thallium poisoning.

MATERIALS AND METHODS

An observational series of cases with acute thallium poisoning was analyzed retrospectively in West China Hospital of Sichuan University between 2000 and 2010. The clinical data including symptom, determination of thallium level, treatment, neurophysiological examination, and neuropsychological evaluation were analyzed. The patients were followed up until December 2012.

RESULTS

Seven men and six women were enrolled in the study. The median patient age was 37 years (range: 15-53 years). The median duration of hospitalization was 44 days (range: 7-72). All the patients were misdiagnosed initially. One patient died in the hospital. The other 12 patients were followed for a median of 7 years (range: 1-12 years) after discharge from hospital. One patient died from leukemia in the first year of follow-up. Long-term outcome results showed peripheral neuropathy improved substantially. However, many patients have mild or moderate sequelae in sensory nerve fibers of distal lower extremity. A sural nerve biopsy in one patient revealed shrunken axons, distorted myelin sheath, and myelinated fibers loss. During follow-up period, problem of intelligence (4/12 patients, 33%), memory impairment (4/12, 33%), anxiety (6/12, 50%), and depression (5/12, 42%) were demonstrated.

CONCLUSIONS

Neurological symptoms may lead to misdiagnosis of thallium poisoning. Mild or moderate neurological sequelae may last for a long time after thallium poisoning.

Effects of d-α-tocopherol and dietary energy on growth and health of preruminant dairy calves

To observe the effects of supplemental dietary d-α-tocopherol in relation to dietary energy on growth and immune status in dairy calves, 32 newborn Holstein bull calves were assigned to 1 of 4 treatments for 5 wk in a 2 × 2 factorial, randomized complete block, split-plot design. Calves received moderate growth (MG) or low growth (LG) all-milk dietary treatments, formulated to support daily gains of 0.5 or 0.25 kg/d, respectively, per the dietary energy recommendation for milk-fed calves according to the National Research Council's Nutrient Requirements of Dairy Cattle. Calves in both groups were either injected i.m. with Vital E-A+D (injectable solution of vitamins E, A, and D) on d 1 and supplemented with Emcelle Tocopherol (micellized vitamin E) via milk daily (MG-S and LG-S), or were not supplemented (MG-C and LG-C) during the study period. Total weight gain of MG calves was greater than that of LG calves and tended to be greater in MG-S calves than in MG-C calves. Calves receiving vitamin supplementation demonstrated greater concentrations of plasma α-tocopherol, retinol, and 25-(OH)-vitamin D than did control calves, whereas MG calves demonstrated a lower concentration of plasma α-tocopherol than did LG calves. The apparent increased utilization of α-tocopherol by MG calves was accompanied by a rise in serum haptoglobin, a positive acute-phase protein and indicator of inflammation, especially in MG-C calves. Serum amyloid A, also a positive acute-phase protein, was not different among groups, but was elevated from baseline in all groups during wk 1 through 3. Plasma IgG1 concentrations were higher in MG-S and LG-S calves than in their nonsupplemented dietary counterparts, whereas plasma IgG2, IgA, and IgM concentrations were not different among groups. In summary, dietary supplementation of d-α-tocopherol improved plasma α-tocopherol status and tended to increase growth in calves fed for 0.5 kg of average daily gain. Vitamin supplementation ameliorated the rise of serum haptoglobin associated with acute inflammation in MG calves, and may have improved passive transfer of maternal antibody. These results indicate a role for α-tocopherol in prevention of proinflammatory state associated with greater dietary energy and onset of infectious disease.

Effects of interface states on photoexcited carriers in ZnO/Zn(2)SnO(4) type-II radial heterostructure nanowires

Type-II band alignment of heterostructure contributes to spatially separate electrons and holes leading to an increase in minority carrier lifetime, which has much more advantages in photocatalytic activities and photovoltaic device applications. Here, Zn2SnO4-sheathed ZnO radial heterostructure nanowires were constructed to investigate systematically interfacial charge separation. The lattice mismatch between ZnO and Zn2SnO4 induces interface states to exist at their heterointerface. At low pump fluence, photoexcited charges are localized within the ZnO core rather than separated due to the large interface barrier. Correspondingly, only ZnO-related bandedge ultraviolet (UV) and green emissions are dominated in photoluminescence spectra. At high pump fluence, however, impurities are ionized and electrons trapped in interface states are excited, resulting in a decrease in interface barrier, which makes photogenerated charges efficiently separated at their heterointerface by direct tunneling, and, consequently, an additional blue-violet emission, attributed to the heterointerface recombination of electrons in Zn2SnO4 conduction band (CB) and holes in ZnO valence band. Additionally, the heterointerface can separate effectively photoexcited carriers and form a photovoltaic effect. Our results provide the localization/separation condition of photogenerated charges for the type-II band alignment of core/shell heterostructure, which should be very useful for the realization of underpinned mechanism of the developed optoelectronic devices.

Enhanced field emission properties from CNT arrays synthesized on Inconel superalloy

One of the most promising materials for fabricating cold cathodes for next generation high-performance flat panel devices is carbon nanotubes (CNTs). For this purpose, CNTs grown on metallic substrates are used to minimize contact resistance. In this report, we compare properties and field emission performance of CNTs grown via water assisted chemical vapor deposition using Inconel vs silicon (Si) substrates. Carbon nanotube forests grown on Inconel substrates are superior to the ones grown on silicon; low turn-on fields (∼1.5 V/μm), high current operation (∼100 mA/cm(2)) and very high local field amplification factors (up to ∼7300) were demonstrated, and these parameters are most beneficial for use in vacuum microelectronic applications.

Preparation and magnetic and microwave absorption properties of MnNb2O6 ellipsoid-like hierarchical structures

The MnNb₂O₆ ellipsoidal hierarchical structures exhibiting antiferromagnetic behavior with T_N ≈ 4 K are fabricated using a facile hydrothermal method.

Androgen receptor inducing bladder cancer progression by promoting an epithelial-mesenchymal transition

The study investigated the role of androgen receptor (AR) as a potential target for the treatment of bladder cancer in regulating epithelial-mesenchymal transition or transformation (EMT). Cell proliferation, and migration capacity were determined in bladder cancer T24 cells treated with small interfering RNA directed against AR, and expression levels of E-cadherin, β-catenin and N- cadherin were assessed using quantitative reverse transcription PCR (qRT-PCR). Tumour cell growth was evaluated in vivo in T24 tumour-bearing nude mice receiving electroporation-assisted administration of anti-AR small interfering RNA. It was found that low AR expression decreased proliferation and migration of bladder cancer cells. In vivo experiments showed that silencing AR expression significantly suppressed AR-positive bladder tumour growth with decreased cell proliferation. Low AR level of T24 bladder cancer cells treated with dehydrotestosterone (DHT) decreased expression of E-cadherin, β-catenin and N-cadherin expression, indicating a strong sensitivity to the EMT and In cells with low AR content, TGF-β induced down-regulation of E-cadherin and β-catenin. It is concluded that suppression of AR expression decreased the production of TGF-β, inhibiting EMT and bladder cancer cell growth in vitro and in vivo, implying that its use might be a potential therapeutic target for the treatment of bladder cancer.

Individual ZnO nanowires for photodetectors with wide response range from solar-blind ultraviolet to near-infrared modulated by bias voltage and illumination intensity

ZnO nanowires have relatively high sensitivity as ultraviolet (UV) photodetectors, while the bandgap of 3.37 eV is an important limitation for their applications in solar-blind UV (SBUV), visible (VIS) and near infrared (NIR) range. Besides UV response, in this study, we demonstrate the promising applications of individual undoped ZnO NWs as high performance SBUV-VIS-NIR broad-spectral-response photodetectors, strongly depended on applied bias voltage and illumination intensity. The dominant mechanism is attributed to the existence of surface states in nanostructured ZnO. At a negative bias voltage electrons can be injected into surface states from electrode, and moreover, under light illumination photogenerated electron-hole pairs can be separated efficiently by surface built-in electric field, resulting into a decrease of potential barrier height and depletion region width, and simultaneously accompanying a filling of oxygen vacancy and a rise of ZnO Fermi level.

Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states

Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn2SnO4-sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol-gel approach followed by post-annealing. The back-to-back bipolar RS properties were observed in the Ohmic contact two-terminal devices based on individual core/shell nanowires. With increasing bias to about 1.5 V, it changes from high-resistance states (HRS) to low-resistance states, and however, it can be restored to HRS by reverse bias. We propose a new mechanism, which is attributed to the injection of electrons into/from interfacial states, arising from the lattice mismatch at ZnO/Zn2SnO4 heterointerface. Upon applying negative/positive voltage at one end of devices, where interfacial states are filled/emptied, barrier will be eliminated/created, resulting into symmetric RS characteristics. The behavior of storage and removal charges demonstrates that the heterostructures have excellent properties for the application in resistance random access memory.