251
|
Graham AHD, Robbins J, Bowen CR, Taylor J. Commercialisation of CMOS integrated circuit technology in multi-electrode arrays for neuroscience and cell-based biosensors. Sensors (Basel) 2011; 11:4943-71. [PMID: 22163884 PMCID: PMC3231360 DOI: 10.3390/s110504943] [Citation(s) in RCA: 37] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/17/2011] [Accepted: 05/03/2011] [Indexed: 11/16/2022]
Abstract
The adaptation of standard integrated circuit (IC) technology as a transducer in cell-based biosensors in drug discovery pharmacology, neural interface systems and electrophysiology requires electrodes that are electrochemically stable, biocompatible and affordable. Unfortunately, the ubiquitous Complementary Metal Oxide Semiconductor (CMOS) IC technology does not meet the first of these requirements. For devices intended only for research, modification of CMOS by post-processing using cleanroom facilities has been achieved. However, to enable adoption of CMOS as a basis for commercial biosensors, the economies of scale of CMOS fabrication must be maintained by using only low-cost post-processing techniques. This review highlights the methodologies employed in cell-based biosensor design where CMOS-based integrated circuits (ICs) form an integral part of the transducer system. Particular emphasis will be placed on the application of multi-electrode arrays for in vitro neuroscience applications. Identifying suitable IC packaging methods presents further significant challenges when considering specific applications. The various challenges and difficulties are reviewed and some potential solutions are presented.
Collapse
Affiliation(s)
- Anthony H. D. Graham
- Department of Electronic & Electrical Engineering, University of Bath, Bath, BA2 7AY, UK; E-Mail:
| | - Jon Robbins
- Receptors & Signalling, Wolfson CARD, King’s College London, London SE1 1UL, UK; E-Mail:
| | - Chris R. Bowen
- Department of Mechanical Engineering, University of Bath, Bath, BA2 7AY, UK; E-Mail:
| | - John Taylor
- Department of Electronic & Electrical Engineering, University of Bath, Bath, BA2 7AY, UK; E-Mail:
| |
Collapse
|
252
|
Colyer RA, Scalia G, Villa FA, Guerrieri F, Tisa S, Zappa F, Cova S, Weiss S, Michalet X. Ultra high-throughput single molecule spectroscopy with a 1024 pixel SPAD. Proc SPIE Int Soc Opt Eng 2011; 7905. [PMID: 24386535 DOI: 10.1117/12.874238] [Citation(s) in RCA: 26] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
Abstract
Single-molecule spectroscopy is a powerful approach to measuring molecular properties such as size, brightness, conformation, and binding constants. Due to the low concentrations in the single-molecule regime, measurements with good statistical accuracy require long acquisition times. Previously we showed a factor of 8 improvement in acquisition speed using a custom-CMOS 8x1 SPAD array. Here we present preliminary results with a 64X improvement in throughput obtained using a liquid crystal on silicon spatial light modulator (LCOS-SLM) and a novel standard CMOS 1024 pixel SPAD array, opening the way to truly high-throughput single-molecule spectroscopy.
Collapse
Affiliation(s)
- Ryan A Colyer
- Department of Chemistry & Biochemistry, UCLA, Los Angeles, CA
| | - Giuseppe Scalia
- Department of Chemistry & Biochemistry, UCLA, Los Angeles, CA
| | - Federica A Villa
- Dipartimento di Elettronica ed Informazione, Politecnico di Milano, Milano, Italy
| | - Fabrizio Guerrieri
- Dipartimento di Elettronica ed Informazione, Politecnico di Milano, Milano, Italy
| | | | - Franco Zappa
- Dipartimento di Elettronica ed Informazione, Politecnico di Milano, Milano, Italy
| | - Sergio Cova
- Dipartimento di Elettronica ed Informazione, Politecnico di Milano, Milano, Italy
| | - Shimon Weiss
- Department of Chemistry & Biochemistry, UCLA, Los Angeles, CA
| | - Xavier Michalet
- Department of Chemistry & Biochemistry, UCLA, Los Angeles, CA
| |
Collapse
|
253
|
Khairi A, Hung SC, Paramesh J, Fedder G, Rabin Y. Ultra-miniature wireless temperature sensor for thermal medicine applications. Proc SPIE Int Soc Opt Eng 2011; 7901:79010T. [PMID: 28989222 PMCID: PMC5627957 DOI: 10.1117/12.874729] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
This study presents a prototype design of an ultra-miniature, wireless, battery-less, and implantable temperature-sensor, with applications to thermal medicine such as cryosurgery, hyperthermia, and thermal ablation. The design aims at a sensory device smaller than 1.5 mm in diameter and 3 mm in length, to enable minimally invasive deployment through a hypodermic needle. While the new device may be used for local temperature monitoring, simultaneous data collection from an array of such sensors can be used to reconstruct the 3D temperature field in the treated area, offering a unique capability in thermal medicine. The new sensory device consists of three major subsystems: a temperature-sensing core, a wireless data-communication unit, and a wireless power reception and management unit. Power is delivered wirelessly to the implant from an external source using an inductive link. To meet size requirements while enhancing reliability and minimizing cost, the implant is fully integrated in a regular foundry CMOS technology (0.15 μm in the current study), including the implant-side inductor of the power link. A temperature-sensing core that consists of a proportional-to-absolute-temperature (PTAT) circuit has been designed and characterized. It employs a microwatt chopper stabilized op-amp and dynamic element-matched current sources to achieve high absolute accuracy. A second order sigma-delta (Σ-Δ) analog-to-digital converter (ADC) is designed to convert the temperature reading to a digital code, which is transmitted by backscatter through the same antenna used for receiving power. A high-efficiency multi-stage differential CMOS rectifier has been designed to provide a DC supply to the sensing and communication subsystems. This paper focuses on the development of the all-CMOS temperature sensing core circuitry part of the device, and briefly reviews the wireless power delivery and communication subsystems.
Collapse
Affiliation(s)
- Ahmad Khairi
- Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pa, 15213
| | - Shih-Chang Hung
- Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pa, 15213
| | | | - Gary Fedder
- Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pa, 15213
| | - Yoed Rabin
- Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pa, 15213
| |
Collapse
|
254
|
Christian JF, Stapels CJ, Johnson EB, McClish M, Dokhale P, Shah KS, Mukhopadhyay S, Chapman E, Augustine FL. Advances in CMOS Solid-state Photomultipliers for Scintillation Detector Applications. Nucl Instrum Methods Phys Res A 2010; 624:449-458. [PMID: 25540471 PMCID: PMC4273941 DOI: 10.1016/j.nima.2010.03.004] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Solid-state photomultipliers (SSPMs) are a compact, lightweight, potentially low-cost alternative to a photomultiplier tube for a variety of scintillation detector applications, including digital-dosimeter and medical-imaging applications. Manufacturing SSPMs with a commercial CMOS process provides the ability for rapid prototyping, and facilitates production to reduce the cost. RMD designs CMOS SSPM devices that are fabricated by commercial foundries. This work describes the characterization and performance of these devices for scintillation detector applications. This work also describes the terms contributing to device noise in terms of the excess noise of the SSPM, the binomial statistics governing the number of pixels triggered by a scintillation event, and the background, or thermal, count rate. The fluctuations associated with these terms limit the resolution of the signal pulse amplitude. We explore the use of pixel-level signal conditioning, and characterize the performance of a prototype SSPM device that preserves the digital nature of the signal. In addition, we explore designs of position-sensitive SSPM detectors for medical imaging applications, and characterize their performance.
Collapse
Affiliation(s)
| | | | - Erik B. Johnson
- Radiation Monitoring Devices, 44 Hunt Street, Watertownm MA 02472 USA
| | - Mickel McClish
- Radiation Monitoring Devices, 44 Hunt Street, Watertownm MA 02472 USA
| | | | - Kanai S. Shah
- Radiation Monitoring Devices, 44 Hunt Street, Watertownm MA 02472 USA
| | | | - Eric Chapman
- Radiation Monitoring Devices, 44 Hunt Street, Watertownm MA 02472 USA
| | | |
Collapse
|
255
|
Nirschl M, Rantala A, Tukkiniemi K, Auer S, Hellgren AC, Pitzer D, Schreiter M, Vikholm-Lundin I. CMOS-integrated film bulk acoustic resonators for label-free biosensing. Sensors (Basel) 2010; 10:4180-93. [PMID: 22399875 PMCID: PMC3292114 DOI: 10.3390/s100504180] [Citation(s) in RCA: 53] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2010] [Revised: 03/18/2010] [Accepted: 04/04/2010] [Indexed: 11/26/2022]
Abstract
The throughput is an important parameter for label-free biosensors. Acoustic resonators like the quartz crystal microbalance have a low throughput because the number of sensors which can be used at the same time is limited. Here we present an array of 64 CMOS-integrated film bulk acoustic resonators. We compare the performance with surface plasmon resonance and the quartz crystal microbalance and demonstrate the performance of the sensor for multiplexed detection of DNA.
Collapse
Affiliation(s)
- Martin Nirschl
- Siemens AG Munich, Corporate Technology, Otto-Hahn-Ring 6, 81739 Munich, Germany; E-Mails: (D.P.); (M.S.)
- Laboratory of Biosensors and Bioelectronics, Institute for Biomedical Engineering, ETH Zurich, Switzerland
- Author to whom correspondence should be addressed; E-Mail: ; Tel.: +49-89-636-55250; Fax: +49-89-636-48131
| | - Arto Rantala
- VTT Technical Research Centre of Finland, Tietotie 3, Espoo, FI-02044 VTT, Finland; E-Mails: (A.R.); (K.T.)
| | - Kari Tukkiniemi
- VTT Technical Research Centre of Finland, Tietotie 3, Espoo, FI-02044 VTT, Finland; E-Mails: (A.R.); (K.T.)
| | - Sanna Auer
- VTT Technical Research Centre of Finland, P.O. Box 1300, FI-33101 Tampere, Finland; E-Mails: (S.A.); (I.V.-L.)
| | | | - Dana Pitzer
- Siemens AG Munich, Corporate Technology, Otto-Hahn-Ring 6, 81739 Munich, Germany; E-Mails: (D.P.); (M.S.)
| | - Matthias Schreiter
- Siemens AG Munich, Corporate Technology, Otto-Hahn-Ring 6, 81739 Munich, Germany; E-Mails: (D.P.); (M.S.)
| | - Inger Vikholm-Lundin
- VTT Technical Research Centre of Finland, P.O. Box 1300, FI-33101 Tampere, Finland; E-Mails: (S.A.); (I.V.-L.)
| |
Collapse
|
256
|
Etoh TG, Son DV, Akino TK, Akino T, Nishi K, Kureta M, Arai M. Ultra-high-speed image signal accumulation sensor. Sensors (Basel) 2010; 10:4100-13. [PMID: 22319344 DOI: 10.3390/s100404100] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2010] [Revised: 04/08/2010] [Accepted: 04/16/2010] [Indexed: 11/16/2022]
Abstract
Averaging of accumulated data is a standard technique applied to processing data with low signal-to-noise ratios (SNR), such as image signals captured in ultra-high-speed imaging. The authors propose an architecture layout of an ultra-high-speed image sensor capable of on-chip signal accumulation. The very high frame rate is enabled by employing an image sensor structure with a multi-folded CCD in each pixel, which serves as an in situ image signal storage. The signal accumulation function is achieved by direct connection of the first and the last storage elements of the in situ storage CCD. It has been thought that the multi-folding is achievable only by driving electrodes with complicated and impractical layouts. Simple configurations of the driving electrodes to overcome the difficulty are presented for two-phase and four-phase transfer CCD systems. The in situ storage image sensor with the signal accumulation function is named Image Signal Accumulation Sensor (ISAS).
Collapse
|
257
|
Rae BR, Muir KR, Gong Z, McKendry J, Girkin JM, Gu E, Renshaw D, Dawson MD, Henderson RK. A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System. Sensors (Basel) 2009; 9:9255-74. [PMID: 22291564 PMCID: PMC3260641 DOI: 10.3390/s91109255] [Citation(s) in RCA: 34] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/02/2009] [Revised: 09/25/2009] [Accepted: 11/13/2009] [Indexed: 11/16/2022]
Abstract
We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equivalent array of LED drivers realized in a standard low-voltage 0.35 μm CMOS technology, capable of producing excitation pulses with a width of 777 ps (FWHM). This system replaces instrumentation based on lasers, photomultiplier tubes, bulk optics and discrete electronics with a PC-based micro-system. Demonstrator lifetime measurements of colloidal quantum dot and Rhodamine samples are presented.
Collapse
Affiliation(s)
- Bruce R. Rae
- Institute for Integrated Micro and Nano Systems, The School of Engineering, The University of Edinburgh, The King's Buildings, Mayfield Road, Edinburgh, EH9 3JL, UK; E-Mails: (K.R.M.); (R.K.H.); (D.R.)
| | - Keith R. Muir
- Institute for Integrated Micro and Nano Systems, The School of Engineering, The University of Edinburgh, The King's Buildings, Mayfield Road, Edinburgh, EH9 3JL, UK; E-Mails: (K.R.M.); (R.K.H.); (D.R.)
| | - Zheng Gong
- Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow, G4 0NW, UK; E-Mails: (Z.G.); (J.M.); (E.G.); (M.D.D.)
| | - Jonathan McKendry
- Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow, G4 0NW, UK; E-Mails: (Z.G.); (J.M.); (E.G.); (M.D.D.)
| | - John M. Girkin
- Department of Physics, Durham University, South Road, Durham, DH1 3LE, UK; E-Mail:
| | - Erdan Gu
- Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow, G4 0NW, UK; E-Mails: (Z.G.); (J.M.); (E.G.); (M.D.D.)
| | - David Renshaw
- Institute for Integrated Micro and Nano Systems, The School of Engineering, The University of Edinburgh, The King's Buildings, Mayfield Road, Edinburgh, EH9 3JL, UK; E-Mails: (K.R.M.); (R.K.H.); (D.R.)
| | - Martin D. Dawson
- Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow, G4 0NW, UK; E-Mails: (Z.G.); (J.M.); (E.G.); (M.D.D.)
| | - Robert K. Henderson
- Institute for Integrated Micro and Nano Systems, The School of Engineering, The University of Edinburgh, The King's Buildings, Mayfield Road, Edinburgh, EH9 3JL, UK; E-Mails: (K.R.M.); (R.K.H.); (D.R.)
| |
Collapse
|
258
|
Ohta J, Tokuda T, Sasagawa K, Noda T. Implantable CMOS Biomedical Devices. Sensors (Basel) 2009; 9:9073-93. [PMID: 22291554 DOI: 10.3390/s91109073] [Citation(s) in RCA: 71] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/05/2009] [Revised: 11/06/2009] [Accepted: 11/09/2009] [Indexed: 11/18/2022]
Abstract
The results of recent research on our implantable CMOS biomedical devices are reviewed. Topics include retinal prosthesis devices and deep-brain implantation devices for small animals. Fundamental device structures and characteristics as well as in vivo experiments are presented.
Collapse
|
259
|
Hsiao PY, Cheng HC, Huang SS, Fu LC. CMOS Image Sensor with a Built-in Lane Detector. Sensors (Basel) 2009; 9:1722-37. [PMID: 22573983 PMCID: PMC3345863 DOI: 10.3390/s90301722] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/16/2009] [Revised: 03/08/2009] [Accepted: 03/11/2009] [Indexed: 11/17/2022]
Abstract
This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%.
Collapse
Affiliation(s)
- Pei-Yung Hsiao
- Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, Taiwan, ROC
- Author to whom correspondence should be addressed; E-Mail: ; Tel:+886-7-5919-423; Fax: +886-7-5919-374
| | - Hsien-Chein Cheng
- Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, ROC; E-Mail:
| | - Shih-Shinh Huang
- Department of Computer and Communication Engineering, National Kaohsiung First University of Science and Technology, Kaohsiung, Taiwan, ROC; E-Mail:
| | - Li-Chen Fu
- Department of Computer Science and Information Engineering, National Taiwan University, Taipei, Taiwan, ROC; E-Mail:
| |
Collapse
|
260
|
Liu MC, Dai CL, Chan CH, Wu CC. Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique. Sensors (Basel) 2009; 9:869-80. [PMID: 22399944 DOI: 10.3390/s90200869] [Citation(s) in RCA: 54] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2008] [Revised: 01/15/2009] [Accepted: 02/09/2009] [Indexed: 11/19/2022]
Abstract
This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature.
Collapse
|
261
|
El-Desouki M, Deen MJ, Fang Q, Liu L, Tse F, Armstrong D. CMOS Image Sensors for High Speed Applications. Sensors (Basel) 2009; 9:430-44. [PMID: 22389609 PMCID: PMC3280755 DOI: 10.3390/s90100430] [Citation(s) in RCA: 130] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2008] [Revised: 01/04/2009] [Accepted: 01/05/2009] [Indexed: 11/16/2022]
Abstract
Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4∼5 μm) due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps).
Collapse
Affiliation(s)
- Munir El-Desouki
- Department of Electrical and Computer Engineering, McMaster University, Hamilton, ON, Canada; E-Mail:
| | - M. Jamal Deen
- Department of Electrical and Computer Engineering, McMaster University, Hamilton, ON, Canada; E-Mail:
| | - Qiyin Fang
- Department of Engineering Physics, McMaster University, Hamilton, ON, Canada; E-Mail:
| | - Louis Liu
- Department of Medicine, University of Toronto, Toronto, ON, Canada; E-Mail:
| | - Frances Tse
- Department of Medicine, McMaster University, Hamilton, ON, Canada; E-Mails: ;
| | - David Armstrong
- Department of Medicine, McMaster University, Hamilton, ON, Canada; E-Mails: ;
| |
Collapse
|
262
|
Shalev G, Cohen A, Doron A, Machauf A, Horesh M, Virobnik U, Ullien D, Levy I. Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications. Sensors (Basel) 2009; 9:4366-79. [PMID: 22408530 DOI: 10.3390/s90604366] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/25/2009] [Revised: 05/20/2009] [Accepted: 05/25/2009] [Indexed: 11/17/2022]
Abstract
Microfabricated semiconductor devices are becoming increasingly relevant for detection of biological and chemical components. The integration of active biological materials together with sensitive transducers offers the possibility of generating highly sensitive, specific, selective and reliable biosensors. This paper presents the fabrication of a sensitive, fully depleted (FD), electrolyte-insulator-semiconductor field-effect transistor (EISFET) made with a silicon-on-insulator (SOI) wafer of a thin 10-30 nm active SOI layer. Initial results are presented for device operation in solutions and for bio-sensing. Here we report the first step towards a high volume manufacturing of a CMOS-based biosensor that will enable various types of applications including medical and environmental sensing.
Collapse
|
263
|
Ballin JA, Crooks JP, Dauncey PD, Magnan AM, Mikami Y, Miller OD, Noy M, Rajovic V, Stanitzki M, Stefanov K, Turchetta R, Tyndel M, Villani EG, Watson NK, Wilson JA. Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels. Sensors (Basel) 2008; 8:5336-5351. [PMID: 27873817 PMCID: PMC3705507 DOI: 10.3390/s8095336] [Citation(s) in RCA: 49] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2008] [Revised: 09/01/2008] [Accepted: 09/01/2008] [Indexed: 11/16/2022]
Abstract
In this paper we present a novel, quadruple well process developed in a modern 0.18 μm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 μm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.
Collapse
Affiliation(s)
- Jamie Alexander Ballin
- Department of Physics, Blackett Laboratory, Imperial College London, London, SW7 2AZ, UK.
| | - Jamie Phillip Crooks
- Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), Harwell Science and Innovation Campus, Didcot, OX11 0QX, UK.
| | - Paul Dominic Dauncey
- Department of Physics, Blackett Laboratory, Imperial College London, London, SW7 2AZ, UK.
| | - Anne-Marie Magnan
- Department of Physics, Blackett Laboratory, Imperial College London, London, SW7 2AZ, UK.
| | - Yoshiari Mikami
- Institut Pluridisciplinaire Hubert Curien, 23 rue du Loess - BP28, 67037 Strasbourg, France.
| | - Owen Daniel Miller
- Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), Harwell Science and Innovation Campus, Didcot, OX11 0QX, UK.
- School of Physics and Astronomy, University of Birmingham, Birmingham, B15 2TT, UK.
| | - Matthew Noy
- Department of Physics, Blackett Laboratory, Imperial College London, London, SW7 2AZ, UK.
| | - Vladimir Rajovic
- Faculty of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade, Serbia.
| | - Marcel Stanitzki
- Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), Harwell Science and Innovation Campus, Didcot, OX11 0QX, UK.
| | - Konstantin Stefanov
- Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), Harwell Science and Innovation Campus, Didcot, OX11 0QX, UK.
| | - Renato Turchetta
- Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), Harwell Science and Innovation Campus, Didcot, OX11 0QX, UK.
| | - Mike Tyndel
- Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), Harwell Science and Innovation Campus, Didcot, OX11 0QX, UK.
| | - Enrico Giulio Villani
- Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), Harwell Science and Innovation Campus, Didcot, OX11 0QX, UK.
| | - Nigel Keith Watson
- School of Physics and Astronomy, University of Birmingham, Birmingham, B15 2TT, UK.
| | - John Allan Wilson
- School of Physics and Astronomy, University of Birmingham, Birmingham, B15 2TT, UK.
| |
Collapse
|
264
|
Lee SP, Lee JG, Chowdhury S. CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials. Sensors (Basel) 2008; 8:2662-72. [PMID: 27879842 DOI: 10.3390/s8042662] [Citation(s) in RCA: 44] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/12/2008] [Accepted: 04/10/2008] [Indexed: 11/16/2022]
Abstract
An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 μA/%RH.
Collapse
|
265
|
Marshall JC. Electro-Physical Technique for Post-Fabrication Measurements of CMOS Process Layer Thicknesses. J Res Natl Inst Stand Technol 2007; 112:223-256. [PMID: 27110468 PMCID: PMC4656013 DOI: 10.6028/jres.112.018] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Accepted: 09/10/2007] [Indexed: 06/01/2023]
Abstract
This paper presents a combined physical and electrical post-fabrication method for determining the thicknesses of the various layers in a commercial 1.5 μm complementary-metal-oxide-semiconductor (CMOS) foundry process available through MOSIS. Forty-two thickness values are obtained from physical step-height measurements performed on thickness test structures and from electrical measurements of capacitances, sheet resistances, and resistivities. Appropriate expressions, numeric values, and uncertainties for each layer of thickness are presented, along with a systematic nomenclature for interconnect and dielectric thicknesses. However, apparent inconsistencies between several of the physical and electrical results for film thickness suggest that further uncertainty analysis is required and the effects of several assumptions need to be quantified.
Collapse
|
266
|
Geist J, Afridi MY, Varma A, Hefner AR. Simple Thermal-Efficiency Model for CMOS-Microhotplate Design. J Res Natl Inst Stand Technol 2006; 111:243-253. [PMID: 27274932 PMCID: PMC4659451 DOI: 10.6028/jres.111.020] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Accepted: 03/16/2006] [Indexed: 06/06/2023]
Abstract
Simple, semi-empirical, first-order, analytic approximations to the current, voltage, and power as a function of microhotplate temperature are derived. To lowest order, the voltage is independent of, and the power and current are inversely proportional to, the length of the microhotplate heater legs. A first-order design strategy based on this result is described.
Collapse
|