2D V-V Binary Materials: Status and Challenges

Epitaxial Growth of 2D Binary Phosphides

Combinations of phosphorus with main group III, IV, and V elements are theoretically predicted to generate 2D binary phosphides with extraordinary properties and promising applications. However, experimental synthesis is significantly lacking. Here, a general approach for preparing 2D binary phosphides is reported using single crystalline surfaces containing the constituent element of target 2D materials as the substrate. To validate this, SnP3 and BiP, representing typical 2D binary phosphides, are successfully synthesized on Cu2Sn and bismuthene, respectively. Scanning tunneling microscopy imaging reveals a hexagonal pattern of SnP3 on Cu2Sn, while α-BiP can be epitaxially grown on the α-bismuthene domain on Cu2Sb. First-principles calculations reveal that the formation of SnP3 on Cu2Sn is associated with strong interface bonding and significant charge transfer, while α-BiP interacts weakly with α-bismuthene so that its semiconducting property is preserved. The study demonstrates an attractive avenue for the atomic-scale growth of binary 2D materials via substrate phase engineering.

Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.

Unusual Janus Bi2TeSe2 Topological Insulators Displaying Second-Harmonic Generation, Linear-in-Temperature Resistivity, and Weak Antilocalization

Well-established knowledge about inversion-symmetric Bi2TexSe3-x topological insulators characterizes the promising new-generation quantum device. Noticeably, the inversion asymmetric phase containing different surface electronic structures may create an extra topological phenomenon pointing to a new device paradigm. Herein, Janus Bi2TeSe2 single-crystal nanosheets with an unconventional stacking sequence of Se-Bi-Se-Bi-Te are realized via chemical vapor deposition growth, which is clarified by atomically resolved AC-STEM and elemental mapping. An obvious polarization-dependent second-harmonic generation with a representative 6-fold rotational symmetry is detected due to the broken out-of-plane mirror symmetry in this system. Low-temperature transport measurements display a strange metal-like linear-in-temperature resistivity. Anomalous conductance peaks under low magnetic fields induced by the weak antilocalization effect of topological surface states and the two-dimensional transport-dominated anisotropic magnetoresistance are revealed. These findings correlate the Janus Bi2TeSe2 phase with emerging physics topics, which would inspire fresh thoughts in well-developed Bi3TexSe3-x topological insulators and open up opportunities for exploring hybrid nonlinear optoelectronic topological devices.

Pentacenequinone-Modulated 2D GdSn-PQ Nanosheets as a Fluorescent Probe for the Detection of Enrofloxacin in Biological and Environmental Samples

The fate and effects of fluoroquinolone antibacterial (FQ) on the environment are important since there appears to be a surge in FQ resistance like enrofloxacin (ENR) in both environmental and clinical organisms. Numerous reports indicate that the sensing capabilities of these antibiotics need to be improved. Here, we have investigated the interaction of ENR with our synthesized pentacenequinone-modulated gadolinium-tin (GdSn-PQ) nanosheets and the formation of intermolecular interactions that caused the occurrence of aggregation-induced emission enhancement. The concept for designing hybrid metallic nanosheets comes from the unique features inherited from the parent organic precursor. Due to the distinct interaction between ENR and GdSn-PQ, the interstate conversion (ISC) between GdSn-PQ and ENR induces a significant wavelength shift in photoluminescence (PL), improving reliability, selectivity, and visibility compared to quenching- or AIEE-based methods without peak shifts, allowing for highly sensitive and visually detectable analyses. The fluorescence signal of GdSn-PQ exhibited a linear relationship (R2 = 0.9911), with the added ENR concentrations ranging from 5 to 90 nM, with a detection limit of 0.10 nM. We have demonstrated its potential and wide use in the detection of ENR in biological samples (human urine and blood serum) and environmental samples (tap water and seawater) with a recovery rate of 98- 108%. The current approach has demonstrated that the 2D GdSn-PQ nanosheet is a novel and powerful platform for future biological and environmental studies.

Wet-Chemical Synthesis of Elemental 2D Materials

Wet-chemical synthesis refers to the bottom-up chemical synthesis in solution, which is among the most popular synthetic approaches towards functional two-dimensional (2D) materials. It offers several advantages, including cost-effectiveness, high yields,, precious control over the production process. As an emerging family of 2D materials, elemental 2D materials (Xenes) have shown great potential in various applications such as electronics, catalysts, biochemistry,, sensing technologies due to their exceptional/exotic properties such as large surface area, tunable band gap,, high carrier mobility. In this review, we provide a comprehensive overview of the current state-of-the-art in wet-chemical synthesis of Xenes including tellurene, bismuthene, antimonene, phosphorene,, arsenene. The current solvent compositions, process parameters utilized in wet-chemical synthesis, their effects on the thickness, stability of the resulting Xenes are also presented. Key factors considered involves ligands, precursors, surfactants, reaction time, temperature. Finally, we highlight recent advances, existing challenges in the current application of wet-chemical synthesis for Xenes production, provide perspectives on future improvement.

Comparison of electron scattering by acoustic-phonons in two types of quantum wells with GaAs and GaN materials

In this work, we report a detailed comparison of electron-acoustic-phonon (EAP) interaction strength in symmetric (parabolic) and asymmetric (semi-parabolic) quantum-wells (QWs) for both GaAs and GaN materials. The operator projection method will be utilized to calculate the acoustic-phonon-assisted cyclotron resonance (CR) absorption power. The EAP interaction strength is determined by measuring the full width at half maximum (FWHM) of the acoustic-phonon-assisted CR absorption peak based on the profile of the curve describing the dependence of the acoustic-phonon-assisted CR absorption power on the photon energy. The studied result reveals that the EAP interaction strengths in the symmetric and asymmetric QWs are functions of the electron temperature (ET), external magnetic field (EMF), and confined potential frequency (CPF). Namely, the larger the ET, the EMF, and the CPF, the stronger the EAP interaction strengths in the symmetric and asymmetric QWs are for both GaN and GaAs materials. More importantly, the obtained result demonstrates that under the influence of the structural (CPF) and external (ET and EMF) parameters, the EAP interaction strength in the symmetric QW is always much stronger than that in the asymmetric QW for both GaN and GaAs materials. Simultaneously, the EAP interaction strength in the GaN material is much stronger than that in the GaAs material for both the symmetric and asymmetric QWs.

Graphene-wrapped petal-like gap-enhanced Raman tags for enhancing photothermal conversion and Raman imaging

Multifunctional nanoplatform that combine imaging, diagnostic, and therapeutic functions into a single agent have great significance for the early diagnosis and efficient treatment of diseases, particularly tumors. In this study, we report on a novel graphene-wrapped petal-like gap-enhanced Raman tags with mesoporous silica shells (MS-GP-GERTs). These MS-GP-GERTs have 4-NBT Raman reporters embedded in the gap between the gold nanocore and the petal-shaped shell and are wrapped in graphene and mesoporous silica. The results of photothermal measurement experiments show that graphene layers significantly enhanced the photothermal effect of gap-enhanced Raman tags (GERTs). The photothermal conversion efficiency of MS-GP-GERTs reaches 40.8%, comparable to pure graphene. Moreover, MS-GP-GERTs show good photothermal performance in agarose phantoms, heating the phantom to 47 °C within 5 min under a low power density laser (0.5 W/cm2). MS-GP-GERTs also exhibit excellent photothermal stability and physiological environment stability, making them a promising candidate for repeated photothermal therapy. Raman spectra and mapping imaging experiments demonstrate MS-GP-GERTs' low detection limit (100 fM), large imaging depth (2.74 mm), and excellent ability to image simulated biological tissue and cells. This novel Raman tag has the potential to become a multifunctional nano platform for integrating Raman imaging diagnosis and photothermal therapy.

Adsorption and sensing performance of air pollutants on a β-TeO2 monolayer: a first-principles study

Two-dimensional (2D) β-TeO2 is a novel semiconductor with potential applications in electronic circuits due to its air-stability and ultra-high carrier mobility. In this study, we explore the possibility of using a 2D β-TeO2 monolayer for the detection of gaseous pollutants including SO2, NO2, H2S, CO2, CO, and NH3 gas molecules based on first-principles calculations. The adsorption properties including the adsorption energy, adsorption distance and charge transfer indicate that the interaction between 2D β-TeO2 and the six gases is via a physisorption mechanism. Among the six gas adsorption systems, the SO2 adsorption system has the most negative adsorption energy and the largest charge transfer. In addition, the adsorption of SO2 obviously changes the electrical conductivity of the β-TeO2 monolayer because the band gap decreases from 2.727 eV to 1.897 eV after adsorbing SO2. Our results suggest that the 2D β-TeO2 should be an eminently promising SO2 sensing material.

Large-area 2D bismuth antimonide with enhanced thermoelectric properties via multiscale electron-phonon decoupling

It is a challenge to obtain high thermoelectric efficiency owing to the conflicting parameters of the materials that are required. In this work, the composition-adjustable 2D bismuth antimonide (Bi_100-xSb_x) is synthesized using an e-beam evaporation system with homemade targets. Engineering multiscale defects is done to optimize the thermoelectric performance in the compound. Sb alloying introduces atomic defects, lattice distortion and increased grain boundary. They drastically decrease the thermal conductivity, with an ultralow value of ∼0.23 W m^-1 K^-1 obtained for the composition with x = 18. It is noticed that the atomic and nanoscale defects do not deteriorate the electrical conductivity (10⁵ S m^-1), and the value is even comparable to the bulk counterpart over a wide composition range (0 ≤ x ≤ 35). Annealing induces pore structure with microscale defects, which increase the Seebeck coefficient by 84% due to the energy barrier. The resultant ZT of 0.13 is enhanced by 420% in the annealed Bi₈₂Sb₁₈ when compared with the as-grown Bi. This work demonstrates a cost-effective and controllable way to decouple electrons and phonons in the thermoelectric field.

Nanosized indium selenide saturable absorber for multiple solitons operation in Er3+-doped fiber laser

With the advances in the field of ultrafast photonics occurring so fast, the demand for optical modulation devices with high performance and soliton lasers which can realize the evolution of multiple soliton pulses is gradually increasing. Nevertheless, saturable absorbers (SAs) with appropriate parameters and pulsed fiber lasers which can output abundant mode-locking states still need to be further explored. Due to the special band gap energy values of few-layer indium selenide (InSe) nanosheets, we have prepared a SA based on InSe on a microfiber by optical deposition. In addition, we demonstrate that our prepared SA possesses a modulation depth and saturable absorption intensity about 6.87% and 15.83 MW/cm², respectively. Then, multiple soliton states are obtained by dispersion management techniques, including regular solitons, and second-order harmonic mode-locking solitons. Meanwhile, we have obtained multi-pulse bound state solitons. We also provide theoretical basis for the existence of these solitons. The results of the experiment show that the InSe has the potential to be an excellent optical modulator because of its excellent saturable absorption properties. This work also is important for improving the understanding and knowledge of InSe and the output performance of fiber lasers.

Recent Development Strategies for Bismuth-Driven Materials in Sustainable Energy Systems and Environmental Restoration

Bismuth(Bi)-based materials have gained considerable attention in recent decades for use in a diverse range of sustainable energy and environmental applications due to their low toxicity and eco-friendliness. Bi materials are widely employed in electrochemical energy storage and conversion devices, exhibiting excellent catalytic and non-catalytic performance, as well as CO₂ /N₂ reduction and water treatment systems. A variety of Bi materials, including its oxides, chalcogenides, oxyhalides, bismuthates, and other composites, have been developed for understanding their physicochemical properties. In this review, a comprehensive overview of the properties of individual Bi material systems and their use in a range of applications is provided. This review highlights the implementation of novel strategies to modify Bi materials based on morphological and facet control, doping/defect inclusion, and composite/heterojunction formation. The factors affecting the development of different classes of Bi materials and how their control differs between individual Bi compounds are also described. In particular, the development process for these material systems, their mass production, and related challenges are considered. Thus, the key components in Bi compounds are compared in terms of their properties, design, and applications. Finally, the future potential and challenges associated with Bi complexes are presented as a pathway for new innovations.

A first-principles study of the adsorption mechanism of NO2 on monolayer antimonide phosphide: a highly sensitive and selective gas sensor

A NO2/SbP adsorption system with high adsorption energy (−0.876 eV) and charge transfer value (−0.83 e) is reported.

Passively mode-locked fiber laser based on GeTe as a saturable absorber

In this work, we fabricate a saturable absorber based on GeTe with saturation intensity and modulation depth of 12.6M W/c m ² and 7%, respectively. We obtain stable conventional soliton and stretched soliton mode-locking operation. For the conventional soliton state, the average output power increased from 0.93 to 8.70 mW with the increase of pump power, and the fundamental repetition rate was 7.8351 MHz. Its central wavelength and 3 dB bandwidth were 1564.72 and 4.78 nm, respectively. For the stretched soliton state, when the pump power was increased from 87.4 to 420.3 mW, the average output power increased from 2.05 to 10.46 mW. When the maximum average output power reached 10.46 mW, the maximum average single-pulse energy was 0.86 nJ. The experimental results show that GeTe nanosheets will have broad application potential in the field of ultrafast photonics.

First-principles study of O-functionalized two-dimensional AsP monolayers: electronic structure, mechanical, piezoelectric, and optical properties

Using density functional theory, we investigated the geometrical properties, electronic structures, carrier mobilities, piezoelectric coefficients, and optical absorption behaviors of three O-functionalizedβ-phase AsP structures (b-AsPO-FO, b-AsPO-As-SO and b-AsPO-P-SO). It is shown that three O-functionalized monolayers are all indirect semiconductors with bandgaps of 0.21, 0.67, and 0.80 eV, respectively. Our calculations demonstrated that the pristine AsP monolayer and these O-functionalized AsP monolayers have strongly anisotropic carrier mobilities, allowing their potential applications for in-plane anisotropic electronic device. The bandgaps of three functionalized nanomaterials exhibit non-monotonic variations under the biaxial strains changing from -0.10 to +0.10, all experiencing metal-indirect bandgap-direct bandgap transition. The calculated in-plane Young's modulus results suggest that they are fairly flexible to allow the application of large elastic strains on the chemically functionalized AsP monolayers. Furthermore, the b-AsPO-FO monolayer exhibits excellent anisotropic light-harvesting behavior (absorption peak: 2.36 and 2.76 eV alongxand 2.37 eV alongydirection) in visible light region. The b-AsPO-As-SO and b-AsPO-P-SO monolayers have strong absorption peak at 2.60 eV and 2.87 eV, respectively. The tunable electronic structures, anisotropic carrier mobility, and excellent optical absorption properties may facilitate practical applications of O-functionalized b-AsP monolayers in nanoelectronics and photovoltaics.

A two-dimensional α-As/α-AsP van der Waals heterostructure for photovoltaic applications

On the basis of first-principles calculations, we constructed a two-dimensional (2D) α-As/α-AsP van der Waals heterostructure (vdWH) to study the structural stability, and electronic and optical properties. Our results show that the 2D α-As/α-AsP vdWH displays indirect semiconductor characteristics with a band gap of 0.86 eV. Furthermore, it exhibits anisotropic properties and a high light absorption coefficient of up to 10⁶ cm^-1 in the ultraviolet region. Our predicted photoelectric conversion efficiency (PCE) of the 2D α-As/α-AsP vdWH reaches 21.30%, which is higher than those of blue-AsP/CdSe (13%), GeSe/AsP (16%), and As/tetracyanonaphtho-quinodimethane (TCNNQ) (20%). By applying an in-plane strain in the range from -6% to 6%, the band structure of the 2D α-As/α-AsP vdWH can be effectively tuned. In particular, under a uniaxial strain of -2% along the x-axis (2% along the y-axis), a transition from indirect to direct in the band structure occurs, while when applying a biaxial strain of -4% a transition from a semiconductor to a metal can be realized. These results indicate that the 2D α-As/α-AsP vdWH has potential applications in optoelectronic devices and solar cells.

Highly Stable, Graphene-Wrapped, Petal-like, Gap-Enhanced Raman Tags

Gap-enhanced Raman tags (GERTs) were widely used in cell or biological tissue imaging due to their narrow spectral linewidth, weak photobleaching effect, and low biological matrix interference. Here, we reported a new kind of graphene-wrapped, petal-like, gap-enhanced Raman tags (GP-GERTs). The 4-Nitrobenzenethiol (4-NBT) Raman reporters were embedded in the petal-like nanogap, and graphene was wrapped on the surface of the petal-like, gap-enhanced Raman tags. Finite-difference time-domain (FDTD) simulations and Raman experimental studies jointly reveal the Raman enhancement mechanism of graphene. The SERS enhancement of GP-GERTs is jointly determined by the petal-like “interstitial hotspots” and electron transfer between graphene and 4-NBT molecules, and the total Raman enhancement factor (EF) can reach 10¹⁰. Mesoporous silica was grown on the surface of GP-GERTs by tetraethyl orthosilicate hydrolysis to obtain Raman tags of MS-GP-GERTs. Raman tag stability experiments showed that: MS-GP-GERTs not only can maintain the signal stability in aqueous solutions of different pH values (from 3 to 12) and simulated the physiological environment (up to 72 h), but it can also stably enhance the signal of different Raman molecules. These highly stable, high-signal-intensity nanotags show great potential for SERS-based bioimaging and multicolor imaging.

One-dimensional quantum channel in bent honeycomb nanoribbons

The directionality of steering charge carriers is of great importance for the application of two-dimensional (2D) materials. Using the generalized Bloch theorem coupled with the self-consistent charge density-functional tight-binding method, we theoretically propose an approach to construct a one-dimensional (1D) quantum channel in honeycomb nanoribbons (NR) via in-plane bending deformation. Bending-induced pseudo-magnetic fields lead to Landau quantization and localize the electronic states along both edges of bent NR. These localized states form robust 1D quantum channels, whose energies can be linearly modulated through the bending angle. Our findings give new inspiration for the realization of transverse magnetic focusing (TMF) under zero magnetic fields and pave the way for the design of 2D material-based nano-devices via strain-engineering.

Electronic and optical properties of a novel two-dimensional semiconductor material TlPt2S3: a first-principles study

Two-dimensional (2D) materials have attracted widespread attention due to their unique physical and chemical properties. Here, by using density functional theory calculations, we suggest a novel 2D TlPt₂S₃ material whose layered bulk counterpart was synthesized in 1973. Theoretical calculation results indicate that the exfoliating energy of monolayer and bilayer TlPt₂S₃ is 34.96 meV Å^-2 and 36.03 meV Å^-2. We systematically studied the electronic and optical properties of monolayer and bilayer TlPt₂S₃, and revealed that they are indirect band gap semiconductors with band gaps of 2.26 eV and 2.10 eV, respectively. Monolayer and bilayer TlPt₂S₃ exhibit superior carrier mobility (901.63 cm² V^-1 s^-1 and 13635.04 cm² V^-1 s^-1 for electron mobility of the monolayer and bilayer, respectively) and photocatalytic performance (as high as 1 × 10⁵ light absorption coefficient in the visible light region). Interestingly, we find that monolayer TlPt₂S₃ has significant hydrogen evolution performance, while in the bilayer, the electron band distribution shows complete oxygen evolution ability, which indicates that the proposed monolayer and bilayer TlPt₂S₃ are potential novel 2D materials suitable for photocatalytic water splitting driven by visible light.

Study on SO2 and Cl2 sensor application of 2D PbSe based on first principles calculations

In this paper, we use 2D PbSe to design a gas sensor to monitor the presence of SO2 and Cl2. We use first principles to verify the feasibility of this material, such as atomic structure, band gap, differential charge density and Bader charge. The results show that 2D PbSe can distinctly adsorb SO2 and Cl2. Furthermore, the adsorption of SO2 and Cl2 will affect the electronic structure of 2D PbSe, and some electrons in the PbSe are transferred to gas atoms. The band gap of the system after adsorption is smaller than that of the PbSe before adsorption. The band gap of single layer PbSe decreases by 41.92% after SO2 adsorption and 60.61% after Cl2 adsorption. The band gap of multi-layer PbSe decreases by 72.97% after SO2 adsorption and 43.24% after Cl2 adsorption. This shows that single layer PbSe is more sensitive to Cl2 and multi-layer PbSe is more sensitive to SO2. It provides a potential possibility for designing gas sensors for SO2 and Cl2 based on 2D PbSe.

2D Arsenene and Arsenic Materials: Fundamental Properties, Preparation, and Applications

As emerging 2D materials, arsenene and arsenic materials have attracted rising interest in the past few years. The diverse crystalline phases, exotic electrical characteristics, and widespread applications of 2D arsenene and arsenic bring them great research value and utilization potential. Herein, the recent progress of 2D arsenene and arsenic is reviewed in terms of fundamental properties, preparation, and applications. The fundamental properties of 2D arsenene and arsenic, including the crystal phases, environmental stability, and electrical structure, from theoretical to experimental reports are first summarized. Then, the experimental processes for preparing 2D arsenene and arsenic, along with their respective advantages and disadvantages, are introduced including epitaxial growth, mechanical exfoliation, and liquid-phase exfoliation. Moreover, applications of 2D arsenene and arsenic are discussed, suggesting a wide range of applications of 2D arsenene and arsenic in field-effect transistors, sensors, catalysts, biological applications, and so on. Finally, some perspectives about the challenges and opportunities of promising 2D arsenene and arsenic are provided. This review provides a helpful guidance and stimulates more focus on future explorations and developments of 2D arsenene and arsenic.

Efficient Saturable Absorber Based on Ferromagnetic Insulator Cr2Ge2Te6 in Er-Doped Mode-Locked Fiber Laser

A ferromagnetic insulator Cr₂Ge₂Te₆ as a saturable absorber in an Er-doped fiber laser (EDFL) was demonstrated. In this work, a CGT-PVA composite film was successfully fabricated using the liquid-phase exfoliation method and employed in an EDFL. The modulation depth and saturation intensity of the SA are 4.26% and 89.40 MW/cm², respectively. Stable pulses with a minimum pulse width of 978.5 fs when the repetition rate was 3.25 MHz were recorded experimentally. Furthermore, stable solitons still need to be obtained when the pulse energy in the cavity is as high as 11.6 nJ. The results fully suggest that CGT has outstanding nonlinear absorption properties, which may have broad potential applications in ultrafast photons.

Identifying infectiousness of SARS-CoV-2 by ultra-sensitive SnS2 SERS biosensors with capillary effect

The current COVID-19 pandemic urges us to develop ultra-sensitive surface-enhanced Raman scattering (SERS) substrates to identify the infectiousness of SARS-CoV-2 virions in actual environments. Here, a micrometer-sized spherical SnS₂ structure with the hierarchical nanostructure of "nano-canyon" morphology was developed as semiconductor-based SERS substrate, and it exhibited an extremely low limit of detection of 10^-13 M for methylene blue, which is one of the highest sensitivities among the reported pure semiconductor-based SERS substrates. Such ultra-high SERS sensitivity originated from the synergistic enhancements of the molecular enrichment caused by capillary effect and the charge transfer chemical enhancement boosted by the lattice strain and sulfur vacancies. The novel two-step SERS diagnostic route based on the ultra-sensitive SnS₂ substrate was presented to diagnose the infectiousness of SARS-CoV-2 through the identification standard of SERS signals for SARS-CoV-2 S protein and RNA, which could accurately identify non-infectious lysed SARS-CoV-2 virions in actual environments, whereas the current PCR methods cannot.

Passively mode-locked Er-doped fiber laser based on a ferromagnetic insulator Cr2Si2Te6 as a saturable absorber

In our work, a new-type, to the best of our knowledge, ferromagnetic insulator and its nonlinear optical absorption characteristics and related ultrafast modulation applications were investigated. Cr₂Si₂Te₆ saturable absorbers (SAs) with a modulation depth and a saturable intensity of 9.7% and 3.5MW/cm² were fabricated. By adjusting the pump power to 120 mW and optimizing the polarization state, traditional soliton operations were obtained successfully; the corresponding duration of pulse and the fundamental repetition rate were ∼1.33ps and 6.70 MHz, and the signal-to-noise ratio was 50 dB. The experimental results reveal that Cr₂Si₂Te₆ with excellent saturable absorption characteristics can be used as a SA to obtain ultrafast pulse lasers.

Anisotropic thermal conductivity and corrugated patterns in single-layer black phosphorus nanoribbon subjected to shear loading: a molecular dynamics study

Single-layer black phosphorus (SLBP) also known as phosphorene is a recently introduced two-dimensional material with unique structure and promising physical properties that has drawn considerable attention in the field of nanodevices. This structure demonstrates a high anisotropy in mechanical and thermal behavior along zigzag (ZZ) and armchair (AC) principal in-plane directions. Here in this study, it is shown that implementing shear strain on 10 nm × 50 nm SLBP nanoribbons (SLBPNRs) along ZZ and AC directions, the anisotropy leads to different corrugated patterns on the pristine structure. Applying non-equilibrium molecular dynamics under a parameterized Stillinger-Weber potential for modelling SLBP, thermal conductivity (TC) behavior of the sheared SLBPNRs with corrugated patterns are examined. The results show a higher amplitude and wavelength of the corregations on the ZZ-aligned SLBPNRs, which is around two times higher than that of AC-aligned counterparts. Although, it is also shown that unlike some other 2D materials, such as graphene, the wrinkling does not have such a significant effect on TC of SLBP. The phonon density of states results obtained in this work as well as phonon dispersion curves by first-principle calculations in other works concrete this finding. The results show small frequency shifts in both high- and low-frequency phonons, which are not strong enough to affect TC in SLBPNRs. This interesting thermal property of SLBP under shear strain suggests the great potential application of these corrugated structures in nanodevices without any loss of TC abilities.

High Anisotropic Optoelectronics in Two Dimensional Layered PbSnX2 (X = S/Se)

We systematically study the giant anisotropic optoelectronics in layered PbSnX₂ (X = S/Se). The highly anisotropic optoelectronics mainly originates from the asymmetric sublattices SnX, resulting in the anisotropy of photoelectronic properties with fascinating visible light absorption range in single-layer and bilayer PbSnX₂. We employ uniaxial strain in both the x and y directions and find an indirect-to-direct band gap transition, while the quasiparticle indirect band gap presents excellent linear scaling with biaxial strain in monolayer PbSnX₂. We also demonstrate ultrahigh anisotropic mobilities of electrons (μ_y > μ_x) and holes (μ_x > μ_y) in both single-layer and bilayer PbSnX₂ (X = S/Se), and spin-orbit coupling effects and the increase of layer number significantly reduce exciton binding energies and band gaps. Finally, the strong layer dependence of the band structure is clearly seen when the film thickness is less than 4 layers. Our results provide a fundamental understanding of highly anisotropic PbSnX₂ (X = S/Se) and show two potential candidates in photoelectric applications.

Atomic-Layer-Deposition-Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigation of industry-compatible synthesis techniques is of key importance. In this respect, it is important to study 2D TMC materials synthesized by the atomic layer deposition (ALD) technique, which is widely applied in industries. In addition to the synthesis of 2D TMCs, ALD is used to modulate the characteristic of 2D TMCs such as their carrier density and morphology. So far, the improvement of thin film uniformity without oxidation and the synthesis of low-dimensional nanomaterials on 2D TMCs have been the research focus. Herein, the synthesis and modulation of 2D TMCs by ALD is described, and the characteristics of ALD-based TMCs used in nanoelectronics, sensors, and energy applications are discussed.

Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table

This tutorial review describes the ongoing effort to convert main-group elements of the periodic table and their combinations into stable 2D materials, which is sometimes called modern 'alchemy'. Theory is successfully approaching this goal, whereas experimental verification is lagging far behind in the synergistic interplay between theory and experiment. The data collected here gives a clear picture of the bonding, structure, and mechanical performance of the main-group elements and their binary compounds. This ranges from group II elements, with two valence electrons, to group VI elements with six valence electrons, which form not only 1D structures but also, owing to their variable oxidation states, low-symmetry 2D networks. Outside of these main groups reviewed here, predominantly ionic bonding may be observed, for example in group II-VII compounds. Besides high-symmetry graphene with its shortest and strongest bonds and outstanding mechanical properties, low-symmetry 2D structures such as various borophene and tellurene phases with intriguing properties are receiving increasing attention. The comprehensive discussion of data also includes bonding and structure of few-layer assemblies, because the electronic properties, e.g., the band gap, of these heterostructures vary with interlayer layer separation and interaction energy. The available data allows the identification of general relationships between bonding, structure, and mechanical stability. This enables the extraction of periodic trends and fundamental rules governing the 2D world, which help to clear up deviating results and to estimate unknown properties. For example, the observed change of the bond length by a factor of two alters the cohesive energy by a factor of four and the extremely sensitive Young's modulus and ultimate strength by more than a factor of 60. Since the stiffness and strength decrease with increasing atom size on going down the columns of the periodic table, it is important to look for suitable allotropes of elements and binaries in the upper rows of the periodic table when mechanical stability and robustness are issues. On the other hand, the heavy compounds are of particular interest because of their low-symmetry structures with exotic electronic properties.

Dual-responsive ultrathin 1T-phase niobium telluride nanosheet-based delivery systems for enhanced chemo-photothermal therapy

1T-phase niobium telluride (NbTe₂) nanosheets are becoming increasingly important in emerging fields, such as spintronics, sensors and magneto-optoelectronics, due to their excellent physical and chemical properties. However, exploration on their biomedical applications are limited. Herein, ultrathin 1T-phase NbTe₂ single-crystalline nanosheets with excellent photothermal performance, high drug-loading rate, near-infrared (NIR) light/acidic pH-triggered drug release, and low toxicity were developed for potentiated photothermal therapy. Importantly, they showed excellent biocompatibility in vivo and in vitro. NbTe₂ nanosheets loaded with integrated stress response inhibitors (ISRIB) could achieve chemo-photothermal therapy of tumors through the ATF4-ASNS signaling axis. Ultrathin 1T-phase NbTe₂ single-crystalline nanosheets with unique photothermal properties, drug loading rate and safety provide dramatic possibilities in biomedical applications, such as tissue imaging, photothermal therapeutics and pharmaceutics.

Switchable Interlayer Magnetic Coupling of Bilayer CrI3

Due to the weak van der Waals (vdW) interlayer interaction, interfacial geometry of two-dimensional (2D) magnetic vdW materials can be freely assembled, and the stacking order between layers can be readily controlled, such as laterally shifting or rotating, which may trigger the variation of magnetic order. We investigate the H-type bilayer CrI3 where the two layers are aligned in anti-parallel directions. Based on first-principles calculations, we propose two states with different interlayer magnetic couplings, i.e., ferromagnetic and antiferromagnetic, and analyze the superexchange mechanism inside. It is found that the two magnetic coupling states are stacking-dependent, and could be switched by applying out-of-plane axial strain and electron doping. Our findings show great application potential in the design of heterostructural and spintronic devices based on 2D magnetic vdW materials.

Black Phosphorus/Polymers: Status and Challenges

As a newly emerged mono-elemental nanomaterial, black phosphorus (BP) has been widely investigated for its fascinating physical properties, including layer-dependent tunable band gap (0.3-1.5 eV), high ON/OFF ratio (10⁴ ), high carrier mobility (10³ cm² V^-1 s^-1 ), excellent mechanical resistance, as well as special in-plane anisotropic optical, thermal, and vibrational characteristics. However, the instability caused by chemical degradation of its surface has posed a severe challenge for its further applications. A focused BP/polymer strategy has more recently been developed and implemented to hurdle this issue, so at present BP/polymers have been developed that exhibit enhanced stability, as well as outstanding optical, thermal, mechanical, and electrical properties. This has promoted researchers to further explore the potential applications of black phosphorous. In this review, the preparation processes and the key properties of BP/polymers are reviewed, followed by a detailed account of their diversified applications, including areas like optoelectronics, bio-medicine, and energy storage. Finally, in accordance with the current progress, the prospective challenges and future directions are highlighted and discussed.

2D NbOI2 : A Chiral Semiconductor with Highly In-Plane Anisotropic Electrical and Optical Properties

Exploring in-plane anisotropic 2D materials is of great significance to the fundamental studies and further development of polarizationsensitive optoelectronics. Herein, chiral niobium oxide diiodide (NbOI₂ ) is introduced into the intriguing anisotropic 2D family with the experimental demonstration of anisotropic optical and electrical properties. 2D NbOI₂ crystals exhibit highly anisotropic dispersed band structures around the Fermi surface and strong in-plane anisotropy of phonon vibrations owing to the different bonding modes of Nb atoms along the b- and c-axes. Consequently, the anisotropic factors of optical absorbance and photoresponsivity in 2D NbOI₂ crystals reach up to 1.75 and 1.7, respectively. These anisotropic properties make 2D NbOI₂ an interesting platform for novel polarization-sensitive optoelectronic applications.

2D III-Nitride Materials: Properties, Growth, and Applications

2D III-nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III-nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin-based devices, and gas detectors. Although the developments of 2D h-BN materials have been successful, the fabrication of other 2D III-nitride materials, such as 2D h-AlN, h-GaN, and h-InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III-nitride materials are summarized. The properties of the 2D III-nitride materials are mainly obtained by first-principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III-nitride materials is focused on 2D h-BN and h-AlN, as the developments of 2D h-GaN and h-InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h-BN materials; however, many potential applications are cited for the entire range of 2D III-nitride materials. Finally, future research directions and prospects in this field are also discussed.

Molybdenum Trioxide Quantum Dot-Encapsulated Nanogels for Virus Detection by Surface-Enhanced Raman Scattering on a 2D Substrate

The use of nanogels (NGs) to modulate surface-enhanced Raman scattering (SERS) activities is introduced as an innovative strategy to address certain critical issues with SERS-based immunoassays. This includes the chemical deformation of SERS nanotags, as well as their nonspecific interactions and effective "hotspots" formation. Herein, the polymeric cocoon and stimuli-responsive properties of NGs were used to encapsulate SERS nanotags containing plasmonic molybdenum trioxide quantum dots (MoO₃-QDs). The pH-controlled release of the encapsulated nanotags and their subsequent localization by maleimide-functionalized magnetic nanoparticles facilitated the creation of "hotspots" regions with catalyzed SERS activities. This approach resulted in developing a biosensing platform for the ultrasensitive immunoassays of hepatitis E virus (HEV) or norovirus (NoV). The immunoassays were optimized using the corresponding virus-like particles to attain limits of detection of 6.5 and 8.2 fg/mL for HEV-LPs and NoV-LPs, respectively. The SERS-based technique achieved a signal enhancement factor of up to ∼10⁸ due to the combined electromagnetic and chemical mechanisms of the employed dual-SERS substrate of MoO₃-QDs/2D hexagonal boron nitride nanosheets. The highlight and validation of the developed SERS-based immunoassays was the detection of NoV in infected patients' fecal specimen and clinical HEV G7 subtype. Importantly, this system can be used to maintain the stability of SERS nanotags and improve their reliability in immunoassays.

Structural, Electronic, and Optical Properties of Hexagonal XC6 (X=N, P, As, and Sb) Monolayers

Based on first-principles calculations, a novel family of two-dimensional (2D) IV-V compounds, XC₆ (X=N, P, As and Sb), is proposed. These compounds exhibit excellent stability, as determined from the cohesive energies, phonon dispersion analysis, ab initio molecular dynamics (AIMD) simulations, and mechanical properties. In this type of structure, the carbon atom is sp² hybridized, whereas the X (N, P, As and Sb) atom is nonplanar sp³ hybridized with one 2p_z orbital filled with lone pair electrons. NC₆ , PC₆ , AsC₆ and SbC₆ monolayers are intrinsic indirect semiconductors with wide bandgaps of 2.02, 2.36, 2.77, and 2.85 eV (based on HSE06 calculations), respectively. After applying mechanical strain, PC₆ , AsC₆ and SbC₆ monolayers can be transformed from indirect to direct semiconductors. The appropriate bandgaps and well-located band edge positions make XC₆ monolayers potential materials for photocatalytic water splitting. XC₆ family members also have high absorption coefficients (∼10⁵  cm^-1 ) in the ultraviolet region and higher electron mobilities (∼10³  cm²  V^-1  s^-1 ) than many known 2D semiconductors.