Two-dimensional gas of massless Dirac fermions in graphene

Electronic transport and quantum hall effect in bipolar graphene p-n-p junctions

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.

Algebraic solution of a graphene layer in transverse electric and perpendicular magnetic fields

We present an exact algebraic solution of a single graphene plane in transverse electric and perpendicular magnetic fields. The method presented gives both the eigenvalues and the eigenfunctions of the graphene plane. It is shown that the eigenstates of the problem can be cast in terms of coherent states, which appears in a natural way from the formalism.

Weiss oscillations in the electronic structure of modulated graphene

We present a theoretical study of the electronic structure of modulated graphene in the presence of a perpendicular magnetic field. The density of states and the bandwidth for the Dirac electrons in this system are determined. The appearance of unusual Weiss oscillations in the bandwidth and density of states is the main focus of this work.

Theory of the three-dimensional quantum Hall effect in graphite

We predict the existence of a three-dimensional quantum Hall effect plateau in a graphite crystal subject to a magnetic field. The plateau has a Hall conductivity quantized at 4e2/variant Planck's over 2pi 1/c0 with c0 the c-axis lattice constant. We analyze the three-dimensional Hofstadter problem of a realistic tight-binding Hamiltonian for graphite, find the gaps in the spectrum, and estimate the critical value of the magnetic field above which the Hall plateau appears. When the Fermi level is in the bulk Landau gap, Hall transport occurs through the appearance of chiral surface states. We estimate the magnetic field necessary for the appearance of the effect to be 15.4 T for electron carriers and 7.0 T for holes.

Excitonic effects in the optical spectra of graphene nanoribbons

We present a first-principles calculation of the optical properties of armchair-edged graphene nanoribbons (AGNRs) with many-electron effects included. The reduced dimensionality of the AGNRs gives rise to an enhanced electron-hole binding energy for both bright and dark exciton states (0.8-1.4 eV for GNRs with width approximately 1.2 nm) and dramatically changes the optical spectra owing to a near complete transfer of oscillator strength to the exciton states from the continuum transitions. The characteristics of the excitons of the three distinct families of AGNRs are compared and discussed. The enhanced excitonic effects found here are expected to be of importance in optoelectronic applications of graphene-based nanostructures.

Synthesis of carbon nanotubes by rolling up patterned graphene nanoribbons using selective atomic adsorption

We demonstrate a new method (U.S. Patent Appl., serial no. 60/908039) for synthesizing carbon nanotubes (CNTs), using first-principles and classical molecular dynamics simulations. The single-walled nanotubes (SWNTs) are formed by folding graphene nanoribbons patterned on graphite films through adsorption of atoms of varying coverage, which introduces an external stress to drive the folding process. The diameter and chirality of SWNTs can be a priori controlled by patterning graphene nanoribbons with predefined width and direction so that the postsynthesis sorting process is eliminated. Our method allows potentially mass production of identical tubes and easy integration into device structures on a substrate.

Substrate-induced bandgap opening in epitaxial graphene

Graphene has shown great application potential as the host material for next-generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is the lack of an energy gap in its electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphene's electronic spectra, they all require complex engineering of the graphene layer. Here, we show that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe that our results highlight a promising direction for bandgap engineering of graphene.

Carbon-based electronics

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

First principles study of magnetism in nanographenes

Magnetism in nanographenes [also known as polycyclic aromatic hydrocarbons (PAHs)] is studied with first principles density functional calculations. We find that an antiferromagnetic (AFM) phase appears as the PAH reaches a certain size. This AFM phase in PAHs has the same origin as the one in infinitely long zigzag-edged graphene nanoribbons, namely, from the localized electronic state at the zigzag edge. The smallest PAH still having an AFM ground state is identified. With increased length of the zigzag edge, PAHs approach an infinitely long ribbon in terms of (1) the energetic ordering and difference among the AFM, ferromagnetic, and nonmagnetic phases and (2) the average local magnetic moment at the zigzag edges. These PAHs serve as ideal targets for chemical synthesis of nanographenes that possess magnetic properties. Moreover, our calculations support the interpretation that experimentally observed magnetism in activated carbon fibers originates from the zigzag edges of the nanographenes.

Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001[over]) 4H-SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. Hence the graphene is doped and a gap opens at the Dirac point after three Bernal stacked carbon layers are formed.

Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001[over]) 4H-SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. Hence the graphene is doped and a gap opens at the Dirac point after three Bernal stacked carbon layers are formed.

Diluted graphene antiferromagnet

We study RKKY interactions between local magnetic moments for both doped and undoped graphene. In the former case interactions for moments located on definite sublattices fall off as 1/R2, whereas for those placed at interstitial sites they decay as 1/R3. The interactions are primarily (anti)ferromagnetic for moments on (opposite) equivalent sublattices, suggesting that at low temperature dilute magnetic moments embedded in graphene can order into a state analogous to that of a dilute antiferromagnet. In the undoped case we find no net magnetic moment in the ground state, and demonstrate numerically this effect for ribbons, suggesting the possibility of an unusual spin-transfer device.

Phase-Coherent Transport in Graphene Quantum Billiards

As an emergent electronic material and model system for condensed-matter physics, graphene and its electrical transport properties have become a subject of intense focus. By performing low-temperature transport spectroscopy on single-layer and bilayer graphene, we observe ballistic propagation and quantum interference of multiply reflected waves of charges from normal electrodes and multiple Andreev reflections from superconducting electrodes, thereby realizing quantum billiards in which scattering only occurs at the boundaries. In contrast to the conductivity of conventional two-dimensional materials, graphene's conductivity at the Dirac point is geometry-dependent because of conduction via evanescent modes, approaching the theoretical value 4e(2)/pih (where e is the electron charge and h is Planck's constant) only for short and wide devices. These distinctive transport properties have important implications for understanding chaotic quantum systems and implementing nanoelectronic devices, such as ballistic transistors.

Quantum Hall states near the charge-neutral Dirac point in graphene

We investigate the quantum Hall (QH) states near the charge-neutral Dirac point of a high mobility graphene sample in high magnetic fields. We find that the QH states at filling factors nu=+/-1 depend only on the perpendicular component of the field with respect to the graphene plane, indicating that they are not spin related. A nonlinear magnetic field dependence of the activation energy gap at filling factor nu=1 suggests a many-body origin. We therefore propose that the nu=0 and +/-1 states arise from the lifting of the spin and sublattice degeneracy of the n=0 Landau level, respectively.

Rayleigh imaging of graphene and graphene layers

We investigate graphene and graphene layers on different substrates by monochromatic and white-light confocal Rayleigh scattering microscopy. The image contrast depends sensitively on the dielectric properties of the sample as well as the substrate geometry and can be described quantitatively using the complex refractive index of bulk graphite. For a few layers (<6), the monochromatic contrast increases linearly with thickness. The data can be adequately understood by considering the samples behaving as a superposition of single sheets that act as independent two-dimensional electron gases. Thus, Rayleigh imaging is a general, simple, and quick tool to identify graphene layers, which is readily combined with Raman scattering, that provides structural identification.

Graphene thickness determination using reflection and contrast spectroscopy

We have clearly discriminated the single-, bilayer-, and multiple-layer graphene (<10 layers) on Si substrate with a 285 nm SiO2 capping layer by using contrast spectra, which were generated from the reflection light of a white light source. Calculations based on Fresnel's law are in excellent agreement with the experimental results (deviation 2%). The contrast image shows the reliability and efficiency of this new technique. The contrast spectrum is a fast, nondestructive, easy to be carried out, and unambiguous way to identify the numbers of layers of graphene sheet. We provide two easy-to-use methods to determine the number of graphene layers based on contrast spectra: a graphic method and an analytical method. We also show that the refractive index of graphene is different from that of graphite. The results are compared with those obtained using Raman spectroscopy.

Detection of individual gas molecules adsorbed on graphene

The ultimate aim of any detection method is to achieve such a level of sensitivity that individual quanta of a measured entity can be resolved. In the case of chemical sensors, the quantum is one atom or molecule. Such resolution has so far been beyond the reach of any detection technique, including solid-state gas sensors hailed for their exceptional sensitivity. The fundamental reason limiting the resolution of such sensors is fluctuations due to thermal motion of charges and defects, which lead to intrinsic noise exceeding the sought-after signal from individual molecules, usually by many orders of magnitude. Here, we show that micrometre-size sensors made from graphene are capable of detecting individual events when a gas molecule attaches to or detaches from graphene's surface. The adsorbed molecules change the local carrier concentration in graphene one by one electron, which leads to step-like changes in resistance. The achieved sensitivity is due to the fact that graphene is an exceptionally low-noise material electronically, which makes it a promising candidate not only for chemical detectors but also for other applications where local probes sensitive to external charge, magnetic field or mechanical strain are required.

The optical visibility of graphene: interference colors of ultrathin graphite on SiO(2)

Monatomic layers of graphite are emerging as building blocks for novel optoelectronic devices. Experimental studies on a single graphite layer (graphene) are today possible since very thin graphite can be identified on a dielectric substrate using a normal optical microscope. We investigate the mechanism behind the strong visibility of graphite, and we discuss the importance of substrates and of the microscope objective used for the imaging.

Temperature dependence of the Raman spectra of graphene and graphene multilayers

We investigated the temperature dependence of the frequency of G peak in the Raman spectra of graphene on Si/SiO2 substrates. The micro-Raman spectroscopy was carried out under the 488 nm laser excitation over the temperature range from -190 to +100 degrees C. The extracted value of the temperature coefficient of G mode of graphene is chi = -0.016 cm-1/ degrees C for the single layer and chi = -0.015 cm-1/ degrees C for the bilayer. The obtained results shed light on the anharmonic properties of graphene.

Filling-factor-dependent magnetophonon resonance in graphene

We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this lattice mode (associated with the G band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0 --> +, 1 and -, 1 --> 0, at a magnetic field B{0} approximately 30 T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice vibrations.

Velocity renormalization and carrier lifetime in graphene from the electron-phonon interaction

We present a first-principles investigation of the phonon-induced electron self-energy in graphene. The energy dependence of the self-energy reflects the peculiar linear band structure of graphene and deviates substantially from the usual metallic behavior. The effective band velocity of the Dirac fermions is found to be reduced by 4%-8%, depending on doping, by the interaction with lattice vibrations. Our results are consistent with the observed linear dependence of the electronic linewidth on the binding energy in photoemission spectra.

Flat bands and Wigner crystallization in the honeycomb optical lattice

We study the ground states of cold atoms in the tight-binding bands built from p orbitals on a two dimensional honeycomb optical lattice. The band structure includes two completely flat bands. Exact many-body ground states with on-site repulsion can be found at low particle densities, for both fermions and bosons. We find crystalline order at n=1/6 with a sqrt[3] x sqrt[3] structure breaking a number of discrete lattice symmetries. In fermionic systems, if the repulsion is strong enough, we find the bonding strength becomes dimerized at n=1/2. Experimental signatures of crystalline order can be detected through the noise correlations in time of flight experiments.

Multiscale imaging and tip-scratch studies reveal insight into the plasma oxidation of graphite

The plasma oxidation process of highly oriented pyrolytic graphite (HOPG) has been investigated through a combination of multiscale (micrometric to atomic) imaging by atomic force and scanning tunneling microscopies (AFM/STM) and STM tip-scratching of the HOPG substrate. Complementary information was obtained by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Repetitive imaging of the same HOPG location following a series of consecutive plasma treatments allowed an accurate determination of the plasma etch rates along both the a and c crystallographic directions of the graphite lattice. The etch rates were typically in the range of a few nm per min along the a axis, and the equivalent of 1-6 graphene layers per min along the c axis. The results pointed to the existence of two main plasma etching regimes, related to short (<20-30 min) and long (> or =30 min) treatment times. This was inferred not only from the measured plasma etch rates but also from the observation of fundamental differences in the atomic-scale surface structure of the plasma-treated HOPG samples, and from the general mechanical behavior of the materials under the action of the AFM tip. In particular, atomic-scale STM imaging suggested a change from a defected, but essentially graphitic, surface in the first regime to an amorphous carbon surface in the second regime. Together with AFM and STM, Raman spectroscopy and XPS provided a consistent picture of the surface structure and chemistry of the plasma-modified HOPG in the two regimes. The implications of these results as well as the possible mechanism that drives the plasma etching process in the two regimes are discussed.

Role of the trigonal warping on the minimal conductivity of bilayer graphene

Using a reformulated Kubo formula we calculate the zero-energy minimal conductivity of bilayer graphene taking into account the small but finite trigonal warping. We find that the conductivity is independent of the strength of the trigonal warping and it is 3 times as large as that without trigonal warping and 6 times larger than that in single layer graphene. Although the trigonal warping of the dispersion relation around the valleys in the Brillouin zone is effective only for low-energy excitations, our result shows that its role cannot be neglected in the zero-energy minimal conductivity.

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and 32 times the quantum of conductance, e(2)/h, consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the demonstrated local-gating technique sets the foundation for a future graphene-based bipolar technology.

Quantized Transport in Graphene p-n Junctions in a Magnetic Field

Recent experimental work on locally gated graphene layers resulting in p-n junctions has revealed the quantum Hall effect in their transport behavior. We explain the observed conductance quantization, which is fractional in the bipolar regime and an integer in the unipolar regime, in terms of quantum Hall edge modes propagating along and across the p-n interface. In the bipolar regime, the electron and hole modes can mix at the p-n boundary, leading to current partition and quantized shot-noise plateaus similar to those of conductance, whereas in the unipolar regime transport is noiseless. These quantum Hall phenomena reflect the massless Dirac character of charge carriers in graphene, with particle/hole interplay manifest in mode mixing and noise in the bipolar regime.

Transverse field effect in graphene ribbons

It is shown that a graphene ribbon, a ballistic strip of carbon monolayer, may serve as a quantum wire whose electronic properties can be continuously and reversibly controlled by an externally applied transverse voltage. The electron bands of armchair-edge ribbons undergo dramatic transformations: The Fermi surface fractures, Fermi velocity and effective mass change sign, and excitation gaps are reduced by the transverse field. These effects are manifest in the conductance plateaus, van Hove singularities, thermopower, and activated transport. The control over one-dimensional bands may help enhance effects of electron correlations, and be utilized in device applications.

Surface transfer p-type doping of epitaxial graphene

Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications.

Nonlocal exchange interaction removes half-metallicity in graphene nanoribbons

Band gap studies of zigzag-edge graphene ribbons are presented. While earlier calculations at LDA level show that zigzag-edge graphene ribbons become half-metallic when cross-ribbon electric fields are applied, our calculations with hybrid density functional demonstrate that finite graphene ribbons behave as half-semiconductors. The spin-dependent band gap can be changed in a wide range, making possible many applications in spintronics.

Carbon nanostructures as an electromechanical bicontinuum

A two-field model provides a unifying framework for elasticity, lattice dynamics and electromechanical coupling in graphene and carbon nanotubes, describes optical phonons, nontrivial acoustic branches, strain-induced gap opening, gap-induced phonon softening, doping-induced deformations, and even the hexagonal graphenic Brillouin zone, and thus explains and extends a previously disparate accumulation of analytical and computational results.

Electronic bisection of a single-wall carbon nanotube by controlled chemisorption

Conversion of two diametrically opposed atomic rows on a carbon nanotube to sp(3) hybridization produces two identical weakly coupled one-dimensional electronic systems within a single robust covalently bonded package: a biribbon. Arm-chair tubes, when so divided, acquire a pair of narrow spin-polarized bands at the Fermi energy; interaction across the sp(3) dividers produces a tunable band splitting in the THz range. For semiconducting tubes, the eigenvalues of the low-energy electronic states are surprisingly unaffected by the bifurcation; however, the tubes' response functions to external electric fields are dramatically altered. These modified tubes could be produced by uniaxial compression transverse to the tube axis followed by site-selective chemisorption.

Scattering and Interference in Epitaxial Graphene

A single sheet of carbon, graphene, exhibits unexpected electronic properties that arise from quantum state symmetries, which restrict the scattering of its charge carriers. Understanding the role of defects in the transport properties of graphene is central to realizing future electronics based on carbon. Scanning tunneling spectroscopy was used to measure quasiparticle interference patterns in epitaxial graphene grown on SiC(0001). Energy-resolved maps of the local density of states reveal modulations on two different length scales, reflecting both intravalley and intervalley scattering. Although such scattering in graphene can be suppressed because of the symmetries of the Dirac quasiparticles, we show that, when its source is atomic-scale lattice defects, wave functions of different symmetries can mix.

New electromagnetic mode in graphene

A new, weakly damped, transverse electromagnetic mode is predicted in graphene. The mode frequency omega lies in the window 1.667<[see text]omega/micro < 2, where micro is the chemical potential, and can be tuned from radio waves to the infrared by changing the density of charge carriers through a gate voltage.

Role of electronic excitations in ion collisions with carbon nanostructures

By combining ab initio time-dependent density functional calculations for electrons with molecular dynamics simulations for ions in real time, we investigate the microscopic mechanism of collisions between energetic protons and graphitic carbon nanostructures. We identify not only the amount of energy lost by the projectile, but also the electronic and ionic degrees of freedom of the target that accommodate this energy as a function of the impact parameter and projectile energy. Our results establish validity limits for the Born-Oppenheimer approximation and the threshold energy for defect formation in carbon nanostructures.

Charge carrier interaction with a purely electronic collective mode: plasmarons and the infrared response of elemental bismuth

We present a detailed optical study of single-crystal bismuth using infrared reflectivity and ellipsometry. Large changes in the plasmon frequency are observed as a function of temperature due to charge transfer between hole and electron Fermi pockets. In the optical conductivity, an anomalous temperature dependent midinfrared absorption feature is observed. An extended Drude model analysis reveals that it can be connected to a sharp upturn in the scattering rate, the frequency of which exactly tracks the temperature dependent plasmon frequency. We interpret this absorption and increased scattering as direct optical evidence for a charge carrier interaction with a collective mode of purely electronic origin, here electron-plasmon scattering. The observation of a plasmaron as such is made possible only by the unique coincidence of various energy scales and exceptional properties of semimetal bismuth.

Simulation and detection of dirac fermions with cold atoms in an optical lattice

We propose an experimental scheme to simulate and observe relativistic Dirac fermions with cold atoms in a hexagonal optical lattice. By controlling the lattice anisotropy, one can realize both massive and massless Dirac fermions and observe the phase transition between them. Through explicit calculations, we show that both the Bragg spectroscopy and the atomic density profile in a trap can be used to demonstrate the Dirac fermions and the associated phase transition.

Valley polarization and susceptibility of composite fermions around a filling factor nu=3/2

We report magnetotransport measurements of fractional quantum Hall states in an AlAs quantum well around a Landau level filling factor nu=3/2, demonstrating that the quasiparticles are composite fermions (CFs) with a valley degree of freedom. By monitoring the valley level crossings for these states as a function of applied symmetry-breaking strain, we determine the CF valley susceptibility and polarization. The data can be explained well by a simple Landau level fan diagram for CFs, and are in nearly quantitative agreement with the results reported for CF spin polarization.

Electromagnetic-field-induced suppression of transport through n-p junctions in graphene

We study electronic transport through an n-p junction in graphene irradiated by an electromagnetic field (EF). In the absence of EF one may expect the perfect transmission of quasiparticles flowing perpendicular to the junction. We show that the resonant interaction of propagating quasiparticles with the EF induces a dynamic gap between electron and hole bands in the quasiparticle spectrum of graphene. In this case the strongly suppressed quasiparticle transmission is only possible due to interband tunneling. The effect may be used to control transport properties of diverse structures in graphene, e.g., n-p-n transistors and quantum dots, by variation of the intensity and frequency of the external radiation.

Quantum criticality and minimal conductivity in graphene with long-range disorder

We consider the conductivity sigma of graphene with negligible intervalley scattering at half filling. We derive the effective field theory, which, for the case of a potential disorder, is a symplectic-class sigma model including a topological term with theta=pi. As a consequence, the system is at a quantum critical point with a universal value of the conductivity of the order of e(2)/h. When the effective time-reversal symmetry is broken, the symmetry class becomes unitary, and sigma acquires the value characteristic for the quantum Hall transition.

Signatures of the Dirac electron in the flux dependence of total persistent currents in isolated Aharonov-Bohm rings

This paper deals with the total persistent current at T = 0 produced by the exact energy solution of the Dirac electron moving on isolated 1D Aharonov-Bohm rings. Leading contributions concerning the non-relativistic limit are written down for large values of the electron number. Usual non-relativistic currents get reproduced, but now in terms of a reversed parity of the electron number. Such an 'anomaly' is able to serve as a signature of the Dirac electron referred to above.

Soft materials with graphitic nanostructures

This review article focuses on our recent studies on novel soft materials consisting of carbon nanotubes. Single-walled carbon nanotubes, when suspended in imidazolium ion-based ionic liquids and ground in an agate mortar, form physical gels (bucky gels), where heavily entangled bundles of carbon nanotubes are exfoliated to give highly dispersed, much finer bundles. By using bucky gels, the first printable actuators that operate in air for a long time without any external electrolyte are developed. Furthermore, the use of polymerizable ionic liquids as the gelling media results in the formation of electroconductive polymer/nanotube composites with enhanced mechanical properties. The article also highlights a new family of nanotubular graphite, via self-assembly of amphiphilic hexabenzocoronene (HBC) derivatives. The nanotubes consist of a graphitic wall composed of a great number of pi-stacked HBC units and are electroconductive upon oxidation. The use of amphiphilic HBCs with functional groups results in the formation of nanotubes with various interesting properties.

Chirality and correlations in graphene

Graphene is described at low energy by a massless Dirac equation whose eigenstates have definite chirality. We show that the tendency of Coulomb interactions in lightly doped graphene to favor states with larger net chirality leads to suppressed spin and charge susceptibilities. Our conclusions are based on an evaluation of graphene's exchange and random-phase-approximation correlation energies. The suppression is a consequence of the quasiparticle chirality switch which enhances quasiparticle velocities near the Dirac point.

Charge mobility of discotic mesophases: a multiscale quantum and classical study

A correlation is established between the molecular structure and charge mobility of discotic mesophases of hexabenzocoronene derivatives by combining electronic structure calculations, molecular dynamics, and kinetic Monte Carlo simulations. It is demonstrated that this multiscale approach can provide an accurate ab initio description of charge transport in organic materials.

Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10(3)-10(4), subthreshold swing of 60 meV per decade, and transconductance of 9.5 x 10(3) Sm-1.

Effect of electron-electron interactions on the conductivity of clean graphene

Minimal conductivity of a single undoped graphene layer is known to be of the order of the conductance quantum, independent of the electron velocity. We show that this universality does not survive electron-electron interaction, which results in nontrivial frequency dependence. We begin with analyzing the perturbation theory in the interaction parameter g for the electron self-energy and observe the failure of the random-phase approximation. The optical conductivity is then derived from the quantum kinetic equation, and the exact result is obtained in the limit when g<<1<< g|lnomega|.