Atomic layers of hybridized boron nitride and graphene domains

Graphene edges: a review of their fabrication and characterization

The current status of graphene edge fabrication and characterization is reviewed in detail. We first compare different fabrication methods, including the chemical vapor deposition method, various ways of unzipping carbon nanotubes, and lithographic methods. We then summarize the different edge/ribbon structures that have been produced experimentally or predicted theoretically. We discuss different characterization tools, such as transmission electron microscopy and Raman spectroscopy, that are currently used for evaluating the edge quality as well as the atomic structures. Finally, a detailed discussion of defective and folded edges is also presented. Considering the short history of graphene edge research, the progress has been impressive, and many further advances in this field are anticipated.

"White graphenes": boron nitride nanoribbons via boron nitride nanotube unwrapping

Inspired by rich physics and functionalities of graphenes, scientists have taken an intensive interest in two-dimensional (2D) crystals of h-BN (analogue of graphite, so-called "white" graphite). Recent calculations have predicted the exciting potentials of BN nanoribbons in spintronics due to tunable magnetic and electrical properties; however no experimental evidence has been provided since fabrication of such ribbons remains a challenge. Here, we show that few- and single-layered BN nanoribbons, mostly terminated with zigzag edges, can be produced under unwrapping multiwalled BN nanotubes through plasma etching. The interesting stepwise unwrapping and intermediate states were observed and analyzed. Opposed to insulating primal tubes, the nanoribbons become semiconducting due to doping-like conducting edge states and vacancy defects, as revealed by structural analyses and ab initio simulations. This study paves the way for BN nanoribbon production and usage as functional semiconductors with a wide range of applications in optoelectronics and spintronics.

Controllable N-doping of graphene

Opening and tuning an energy gap in graphene are central to many electronic applications of graphene. Here we report N-doped graphene obtained by NH3 annealing after N(+)-ion irradiation of graphene samples. First, the evolution of the graphene microstructure was investigated following N(+)-ion irradiation at different fluences using Raman spectroscopy, showing that defects were introduced in plane after irradiation and then restored after annealing in N2 or in NH3. Auger electron spectroscopy (AES) of the graphene annealed in NH3 after irradiation showed N signal, however, no N signal was observed after annealing in N2. Last, the field-effect transistor (FET) was fabricated using N-doped graphene and monitored by the source-drain conductance and back-gate voltage (Gsd-Vg) curves in the measurement. The transport property changed compared to that of the FET made by intrinsic graphene, that is, the Dirac point position moved from positive Vg to negative Vg, indicating the transition of graphene from p-type to n-type after annealing in NH3. Our approach, which provides a physical mechanism for the introduction of defect and subsequent hetero dopant atoms into the graphene material in a controllable fashion, will be promising for producing graphene-based devices for multiple applications.

Synthesis of nitrogen-doped graphene films for lithium battery application

We demonstrate a controlled growth of nitrogen-doped graphene layers by liquid precursor based chemical vapor deposition (CVD) technique. Nitrogen-doped graphene was grown directly on Cu current collectors and studied for its reversible Li-ion intercalation properties. Reversible discharge capacity of N-doped graphene is almost double compared to pristine graphene due to the large number of surface defects induced due to N-doping. All the graphene films were characterized by Raman spectroscopy, transmission electron microscopy, and X-ray photoemission spectroscopy. Direct growth of active electrode material on current collector substrates makes this a feasible and efficient process for integration into current battery manufacture technology.

Large scale growth and characterization of atomic hexagonal boron nitride layers

Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called "white graphene", has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN films consisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoindentation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.

Electronic structure of a graphene/hexagonal-BN heterostructure grown on Ru(0001) by chemical vapor deposition and atomic layer deposition: extrinsically doped graphene

A significant BN-to-graphene charge donation is evident in the electronic structure of a graphene/h-BN(0001) heterojunction grown by chemical vapor deposition and atomic layer deposition directly on Ru(0001), consistent with density functional theory. This filling of the lowest unoccupied state near the Brillouin zone center has been characterized by combined photoemission/k vector resolved inverse photoemission spectroscopies, and Raman and scanning tunneling microscopy/spectroscopy. The unoccupied σ*(Γ(1) +) band dispersion yields an effective mass of 0.05 m(e) for graphene in the graphene/h-BN(0001) heterostructure, in spite of strong perturbations to the graphene conduction band edge placement.