Interface Characterization and Control of 2D Materials and Heterostructures

A DFT study on a borophene/boron nitride interface for its application as an electrode

In order to search for a new anode material for lithium-ion batteries (LIBs), a borophene/boron nitride (B/BN) interface was investigated in detail using density functional theory. Borophene is an excellent two-dimensional (2D) anode material that offers high charging capacity and a low energy barrier, but it suffers from stability issues when it is used in its free-standing form. The findings of this work indicate that the thermal and mechanical stabilities of the borophene epilayer are notably increased by preparing its interface with a boron nitride substrate. The electronic properties of the lithiated and delithiated interface exhibited metallic behavior, whereas the mechanical stiffness of the interface increased three times when compared with that of the pristine borophene. The thermal stability was calculated by molecular dynamics and indicated a six times increase in its value for the interface. The interface exhibited a specific charging capacity of 1698 mA h g^-1, which is higher than that of bare borophene and several other 2D materials. Furthermore, nudged elastic band (NEB) calculations indicated a low energy barrier to diffusion of Li in the interface. These advantages of the B/BN interface make it an excellent choice as an anode material for LIBs.

Atomic Layer Deposition of High-Quality Al2O3 Thin Films on MoS2 with Water Plasma Treatment

Atomic layer deposition (ALD) of ultrathin dielectric films on two-dimensional (2D) materials for electronic device applications remains one of the key challenges because of the lack of dangling bonds on the 2D material surface. In this work, a new technique to deposit uniform and high-quality Al₂O₃ films with thickness down to 1.5 nm on MoS₂ is introduced. By treating the surface using water plasma prior to the ALD process, hydroxyl groups are introduced to the MoS₂ surface, facilitating the chemisorption of trimethylaluminum in a conventional water-based ALD system. Raman and X-ray photoelectron spectroscopy measurements show that the water plasma treatment does not induce noticeable material degradation. The deposited Al₂O₃ films show excellent device-related electrical performance characteristics, including low interface trap density and outstanding gate controllability.

Photoinduced Carrier Dynamics at the Interface of Pentacene and Molybdenum Disulfide

Understanding of photoinduced interfacial carrier dynamics in organic-transition metal dichalcogenides heterostructures is very important for the enhancement of their potential photoelectronic conversion efficiencies. In this work we have used density functional theory (DFT) calculations and DFT-based fewest-switches surface-hopping dynamics simulations to explore the photoinduced hole transfer and subsequent nonadiabatic electron-hole recombination dynamics taking place at the interface of pentacene and MoS₂ in pentacene@MoS₂. Upon photoexcitation the electronic transition mainly occurs on the MoS₂ monolayer, which corresponds to moving an electron to the MoS₂ conduction band. As a result, a hole is left in the valence band. This hole state is energetically lower than certain occupied states of the pentacene molecule; thus, the interfacial hole transfer from MoS₂ to pentacene is favorable in energy. In terms of nonadiabatic dynamics simulations, the hole transfer time to the HOMO-1 state of the pentacene is estimated to be about 600 fs; however, the following hole relaxation process from HOMO-1 to HOMO takes much longer time of ca. 15 ps due to the large energy gap between HOMO-1 and HOMO. Moreover, our results also show that the subsequent radiationless recombination process between the hole transferred to the pentacene molecule and the remaining electron on the MoS₂ CBM needs about 10.2 ns. The computational results shed important mechanistic insights on the interfacial carrier dynamics of mixed-dimensional pentacene@MoS₂. These insights could help to design excellent interfaces for organic-TMDs heterostructures.

Strain-Engineered van der Waals Interfaces of Mixed-Dimensional Heterostructure Arrays

van der Waals (vdWs) heterostructures have provided a platform for nanoscale material integrations and enabled promise for use in optoelectronic devices. Because of the ultrastrength of two-dimensional materials, strain engineering is considered as an effective way to tune their band structures and further tailor the interface performance of vdWs heterostructures. However, the less-constrained vdWs interfaces make the traditional strain technique via lattice-mismatched growth infeasible. Here, we report a strategy to construct mixed-dimensional heterostructure arrays with periodically strain-engineered vdWs interfaces utilizing one-dimensional semiconductor-induced nanoindentation. Using monolayer MoS₂ (1L-MoS₂)/ZnO heterostructure arrays as a model system, we demonstrate inhomogeneous built-in strain gradient at the heterointerfaces ranging from 0 to 0.6% tensile. Through systematic optical characterization of the hybrid structures, we verify that strain can improve the interfacial charge transfer efficiency. Consequently, we observe that the photoluminescence (PL) emission of 1L-MoS₂ at strained interfaces is dramatically quenched more than 50% with respect to that at unstrained interfaces. Furthermore, we confirm that the strain-optimized interfacial carrier behavior is attributed to the reduction of interfacial barrier height, which originated from the strain-dependent Fermi level of 1L-MoS₂. These results demonstrate that strain provides another degree of freedom in tuning the vdWs interface performance and our method developed here should enable flexibility in achieving more sophisticated vdWs integration via strain engineering.

Atomic-scale mapping of hydrophobic layers on graphene and few-layer MoS2 and WSe2 in water

The structure and the role of the interfacial water in mediating the interactions of extended hydrophobic surfaces are not well understood. Two-dimensional materials provide a variety of large and atomically flat hydrophobic surfaces to facilitate our understanding of hydrophobic interactions. The angstrom resolution capabilities of three-dimensional AFM are exploited to image the interfacial water organization on graphene, few-layer MoS2 and few-layer WSe2. Those interfaces are characterized by the existence of a 2 nm thick region above the solid surface where the liquid density oscillates. The distances between adjacent layers for graphene, few-layer MoS2 and WSe2 are ~0.50 nm. This value is larger than the one predicted and measured for water density oscillations (~0.30 nm). The experiments indicate that on extended hydrophobic surfaces water molecules are expelled from the vicinity of the surface and replaced by several molecular-size hydrophobic layers.

A Universal Approach toward Light-Responsive Two-Dimensional Electronics: Chemically Tailored Hybrid van der Waals Heterostructures

Stimuli-responsive hybrid van der Waals heterostructures (vdWHs), composed of organic molecular switches superimposed on inorganic 2D materials (2DMs), can combine the outstanding physical properties of the latter components with the virtually infinite variety of tunable functionality of molecules, thereby offering an efficient protocol for the development of high-performance multifunctional materials and devices. The use of light as a remote control to modulate the properties of semiconducting 2DMs when interfaced with photochromic molecules suffers from both the limitation associated with the persistent photoconductivity characterizing the 2DMs and the finite thermal stability of the photochromic molecule in its different states. Here, we have devised a universal approach toward the fabrication of optically switchable electronic devices comprising a few nanometers thick azobenzene (AZO) layer physisorbed on 2D semiconductors supported on a trap-free polymer dielectric. The joint effect of the improved 2D/dielectric interface, the molecule's light-modulated dipolar doping, and the high thermal stability of cis-AZO offers the highest control over the reversible and efficient charge carrier tuning in 2D semiconductors with a preserved high performance in 2D field-effect transistors, as quantified in terms of carrier mobility and I_on/ I_off ratio. The device has the potential to operate as an optical memory with four current levels and long retention time (>15 h). Furthermore, by using a CMOS-compatible micropatterning process, the photoswitchable resistor-diode transition has been achieved on hybrid lateral heterojunction devices. Our approach is of general applicability toward the generation of high-performance hybrid vdWHs for the emergence of functional and responsive devices.

Self-Healing Originated van der Waals Homojunctions with Strong Interlayer Coupling for High-Performance Photodiodes

The dangling-bond-free surfaces of van der Waals (vdW) materials make it possible to build ultrathin junctions. Fundamentally, the interfacial phenomena and related optoelectronic properties of vdW junctions are modulated by the interlayer coupling effect. However, the weak interlayer coupling of vdW heterostructures limits the interlayer charge transfer efficiency, resulting in low photoresponsivity. Here, a bilayer MoS₂ homogeneous junction is constructed by stacking the as-grown onto the self-healed monolayer MoS₂. The homojunction barrier of ∼165 meV is obtained by the electronic structure modulation of defect self-healing. This homojunction reveals the stronger interlayer coupling effect in comparison with vdW heterostructures. This ultrastrong interlayer coupling effect is experimentally verified by Raman spectra and angle-resolved photoemission spectroscopy. The ultrafast interlayer charge transfer takes place within ∼447 fs, which is faster than those of most vdW heterostructures. Furthermore, the homojunction photodiode manifests outstanding rectifying behavior with an ideal factor of ∼1.6, perfect air stability over 12 months, and high responsivity of ∼54.6 mA/W. Moreover, the interlayer exciton peak of ∼1.66 eV is found in vdW homojunctions. This work offers an uncommon vdW junction with strong interlayer coupling and perfects the relevance of interlayer coupling and interlayer charge transfer.

Ångstrom-Scale, Atomically Thin 2D Materials for Corrosion Mitigation and Passivation

Metal deterioration via corrosion is a ubiquitous and persistent problem. Ångstrom-scale, atomically thin 2D materials are promising candidates for effective, robust, and economical corrosion passivation coatings due to their ultimate thinness and excellent mechanical and electrical properties. This review focuses on elucidating the mechanism of 2D materials in corrosion mitigation and passivation related to their physicochemical properties and variations, such as defects, out-of-plane deformations, interfacial states, temporal and thickness variations, etc. In addition, this review discusses recent progress and developments of 2D material coatings for corrosion mitigation and passivation as well as the significant challenges to overcome in the future.

2D oxides on metal materials: concepts, status, and perspectives

Two-dimensional oxide-on-metal materials: concepts, methods, and link to technological applications, with 5 subtopics: structural motifs, robustness, catalysis, ternaries, and nanopatterning.