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Kim WG, Kim DW, Tcho IW, Kim JK, Kim MS, Choi YK. Triboelectric Nanogenerator: Structure, Mechanism, and Applications. ACS NANO 2021; 15:258-287. [PMID: 33427457 DOI: 10.1021/acsnano.0c09803] [Citation(s) in RCA: 122] [Impact Index Per Article: 40.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
With the rapid development of the Internet of Things (IoT), the number of sensors utilized for the IoT is expected to exceed 200 billion by 2025. Thus, sustainable energy supplies without the recharging and replacement of the charge storage device have become increasingly important. Among various energy harvesters, the triboelectric nanogenerator (TENG) has attracted considerable attention due to its high instantaneous output power, broad selection of available materials, eco-friendly and inexpensive fabrication process, and various working modes customized for target applications. The TENG harvests electrical energy from wasted mechanical energy in the ambient environment. Three types of operational modes based on contact-separation, sliding, and freestanding are reviewed for two different configurations with a double-electrode and a single-electrode structure in the TENGs. Various charge transfer mechanisms to explain the operational principles of TENGs during triboelectrification are also reviewed for electron, ion, and material transfers. Thereafter, diverse methodologies to enhance the output power considering the energy harvesting efficiency and energy transferring efficiency are surveyed. Moreover, approaches involving not only energy harvesting by a TENG but also energy storage by a charge storage device are also reviewed. Finally, a variety of applications with TENGs are introduced. This review can help to advance TENGs for use in self-powered sensors, energy harvesters, and other systems. It can also contribute to assisting with more comprehensive and rational designs of TENGs for various applications.
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Affiliation(s)
- Weon-Guk Kim
- School of Electrical Engineering, KAIST, Daejeon 34141, Republic of Korea
| | - Do-Wan Kim
- School of Electrical Engineering, KAIST, Daejeon 34141, Republic of Korea
| | - Il-Woong Tcho
- School of Electrical Engineering, KAIST, Daejeon 34141, Republic of Korea
| | - Jin-Ki Kim
- School of Electrical Engineering, KAIST, Daejeon 34141, Republic of Korea
| | - Moon-Seok Kim
- School of Electrical Engineering, KAIST, Daejeon 34141, Republic of Korea
| | - Yang-Kyu Choi
- School of Electrical Engineering, KAIST, Daejeon 34141, Republic of Korea
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Yu J, Wei X, Guo Y, Zhang Z, Rui P, Zhao Y, Zhang W, Shi S, Wang P. Self-powered droplet manipulation system for microfluidics based on triboelectric nanogenerator harvesting rotary energy. LAB ON A CHIP 2021; 21:284-295. [PMID: 33439205 DOI: 10.1039/d0lc00994f] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Microfluidic technology, as a method for manipulating tiny fluids, has the advantages of low sample consumption, fast reaction, and no cross-contamination. In a microfluidic system, accurate manipulation of droplets is a crucial technology that has been widely investigated. In this work, a self-powered droplet manipulation system (SDMS) is proposed to realize various droplet operations, including moving, splitting, merging, mixing, transporting chemicals and reacting. The SDMS is mainly composed of a triboelectric nanogenerator (TENG), an electric brush, and a microfluidic device. The TENG serves as a high-voltage source to power the system. Using different electric brushes and microfluidic devices, different manipulations of droplets can be achieved. Moreover, by experiments and simulations, the influence of the electrode width, the electrode gap and the central angle of one electrode on the performance of SDMS is analyzed in detail. Firstly, by using electrowetting-on-dielectric (EWOD) technology, SDMS can accurately control droplets for long-distance linear movement and simultaneously control multiple droplets to move in a circular electrode track consisting of 40 electrodes. SDMS can also manipulate two droplets of different components to merge and react. In addition, using dielectrophoresis (DEP) technology, SDMS can separate droplets with maximum volumes of 400 μL and reduce the time of the complete mixing of two droplets with different components by 6.3 times compared with the passive mixing method. Finally, the demonstration shows that a droplet can be manipulated by hand power for chemical delivery and chemical reactions on a circular electrode track without an external power source, which proves the applicability of SDMS as an open-surface microfluidic device. Therefore, the self-powered droplet manipulation system proposed in this work may have great application in the fields of drug delivery, micro chemical reactions, and biological microanalysis.
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Affiliation(s)
- Junjie Yu
- School of Physics and Materials Science, Energy Materials and Devices Key Lab of Anhui Province for Photoelectric Conversion, Anhui University, Hefei, 230601, P. R. China.
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Zhao Z, Dai Y, Liu D, Zhou L, Li S, Wang ZL, Wang J. Rationally patterned electrode of direct-current triboelectric nanogenerators for ultrahigh effective surface charge density. Nat Commun 2020; 11:6186. [PMID: 33273477 PMCID: PMC7712892 DOI: 10.1038/s41467-020-20045-y] [Citation(s) in RCA: 73] [Impact Index Per Article: 18.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/27/2020] [Accepted: 11/11/2020] [Indexed: 12/04/2022] Open
Abstract
As a new-era of energy harvesting technology, the enhancement of triboelectric charge density of triboelectric nanogenerator (TENG) is always crucial for its large-scale application on Internet of Things (IoTs) and artificial intelligence (AI). Here, a microstructure-designed direct-current TENG (MDC-TENG) with rationally patterned electrode structure is presented to enhance its effective surface charge density by increasing the efficiency of contact electrification. Thus, the MDC-TENG achieves a record high charge density of ~5.4 mC m−2, which is over 2-fold the state-of-art of AC-TENGs and over 10-fold compared to previous DC-TENGs. The MDC-TENG realizes both the miniaturized device and high output performance. Meanwhile, its effective charge density can be further improved as the device size increases. Our work not only provides a miniaturization strategy of TENG for the application in IoTs and AI as energy supply or self-powered sensor, but also presents a paradigm shift for large-scale energy harvesting by TENGs. Low charge density is the bottleneck for the applications of triboelectric nanogenerator (TENG). Here, the authors demonstrate a microstructure-designed direct-current TENG with rationally patterned electrode structure to enhance its effective charge density to a new milestone.
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Affiliation(s)
- Zhihao Zhao
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.,School of Materials, Sun Yat-sen University, Guangzhou, 510275, China
| | - Yejing Dai
- School of Materials, Sun Yat-sen University, Guangzhou, 510275, China
| | - Di Liu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.,College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Linglin Zhou
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.,College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shaoxin Li
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.,College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China. .,College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China. .,School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
| | - Jie Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China. .,College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China.
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Lin S, Zheng M, Luo J, Wang ZL. Effects of Surface Functional Groups on Electron Transfer at Liquid-Solid Interfacial Contact Electrification. ACS NANO 2020; 14:10733-10741. [PMID: 32806074 DOI: 10.1021/acsnano.0c06075] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Contact electrification (CE) at interfaces is sensitive to the functional groups on the solid surface, but its mechanism is poorly understood, especially for the liquid-solid cases. A core controversy is the identity of the charge carriers (electrons or/and ions) in the CE between liquids and solids. Here, the CE between SiO2 surfaces with different functional groups and different liquids, including DI water and organic solutions, is systematically studied, and the contribution of electron transfer is distinguished from that of ion transfer according to the charge decay behavior at surfaces at specific temperature, because electron release follows the thermionic emission theory. It is revealed that electron transfer plays an important role in the CE between liquids and functional group modified SiO2. Moreover, the electron transfer between the DI water and the SiO2 is found highly related to the electron affinity of the functional groups on the SiO2 surfaces, while the electron transfer between organic solutions and the SiO2 is independent of the functional groups, due to the limited ability of organic solutions to donate or gain electrons. An energy band model for the electron transfer between liquids and solids is further proposed, in which the effects of functional groups are considered. The discoveries in this work support the "two-step" model about the formation of an electric double-layer (Wang model), in which the electron transfer occurs first when the liquids contact the solids for the very first time.
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Affiliation(s)
- Shiquan Lin
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Mingli Zheng
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jianjun Luo
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
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Yuan Z, Pan C. Quantifying electron-transfer in liquid-solid contact electrification. Sci Bull (Beijing) 2020; 65:868-869. [PMID: 36747416 DOI: 10.1016/j.scib.2020.03.009] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Affiliation(s)
- Zuqing Yuan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China; College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China; College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
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Zheng M, Lin S, Xu L, Zhu L, Wang ZL. Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000928. [PMID: 32270901 DOI: 10.1002/adma.202000928] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Revised: 03/16/2020] [Accepted: 03/17/2020] [Indexed: 06/11/2023]
Abstract
Contact electrification (CE or triboelectrification) is a common phenomenon, which can occur for almost all types of materials. In previous studies, the CE between insulators and metals has been widely discussed, while CE involving semiconductors is only recently. Here, a tribo-current is generated by sliding an N-type diamond coated tip on a P-type or N-type Si wafers. The density of surface states of the Si wafer is changed by introducing different densities of doping. It is found that the tribo-current between two sliding semiconductors increases with increasing density of surface states of the semiconductor and the sliding load. The results suggest that the tribo-current is induced by the tribovoltaic effect, in which the electron-hole pairs at the sliding interface are excited by the energy release during friction, which may be due to the transition of electrons between the surface states during contact, or bond formation across the sliding interface. The electron-hole pairs at the sliding interface are subsequently separated by the built-in electric field at the PN or NN heterojunctions, which results in a tribo-current, in analogy to that which occurs in the photovoltaic effect.
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Affiliation(s)
- Mingli Zheng
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Shiquan Lin
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liang Xu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Laipan Zhu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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Kong TH, Lee SS, Choi GJ, Park IK. Churros-like Polyvinylidene Fluoride Nanofibers for Enhancing Output Performance of Triboelectric Nanogenerators. ACS APPLIED MATERIALS & INTERFACES 2020; 12:17824-17832. [PMID: 32223263 DOI: 10.1021/acsami.0c00708] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Triboelectric nanogenerators (TENGs) have emerged as a next-generation sustainable power source for Internet of Things technology. Polyvinylidene fluoride (PVDF) nanofibers (NFs) have been investigated widely to enhance the TENG performance by controlling their polarity; however, controlling the surface morphology of the PVDF NFs has rarely been studied. Here, surface-roughened, churros-like PVDF NFs were fabricated by controlling the solvent evaporation kinetics. The solvent evaporation rate was modulated by varying the relative humidity (RH) during the electrospinning process. With increasing RH, the fraction of polar β-phase in the PVDF NFs increased, the specific surface area of the PVDF NFs increased gradually and the surface morphology changed from smooth to rough, finally resulting in a churros-like structure. Therefore, the output performance of the TENG devices was enhanced with increasing RH, because of the combined effects of the enlarged surface area and the increased fraction of the polar phase in the PVDF NFs. The TENG device with the churros-like PVDF NFs showed an output voltage of 234 V, current of 11 μA, and power density up to 1738 μW/cm2, giving it the capability to turn on 60 series-connected commercial light-emitting diodes without using an external charge storage circuit.
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Affiliation(s)
- Tae-Hoon Kong
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
| | - Sang-Seok Lee
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
| | - Geon-Ju Choi
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
| | - Il-Kyu Park
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
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Xia X, Wang H, Basset P, Zhu Y, Zi Y. Inductor-Free Output Multiplier for Power Promotion and Management of Triboelectric Nanogenerators toward Self-Powered Systems. ACS APPLIED MATERIALS & INTERFACES 2020; 12:5892-5900. [PMID: 31913007 DOI: 10.1021/acsami.9b20060] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The output voltage of triboelectric nanogenerators (TENGs) is much higher than the overload capacity of most commercial electronics, making it hard to power them directly; so the power-management solution is indispensable. In the meanwhile, it is critical for practical applications to enhance the output performance of the TENG toward its breakdown limit, which is usually ignored before. Here, an inductor-free output multiplier (OM) for power promotion and management of TENGs is proposed, with the breakdown effect considered. This OM, as expanded based on bennet's doubler, is theoretically studied and experimentally demonstrated to significantly enhance the output performance of the TENG within only a few working cycles. The charge output was enhanced by 7.6 times experimentally with the OM. An external capacitor and a switch are applied to realize a high energy extraction ratio of up to 196%, with the average charge output per cycle of ∼3-3.75 μC achieved. This OM circuit with the smart switch is suitable for power promotion of TENGs with variable capacitance and for power management of all TENGs. The OM circuit is demonstrated to ensure the high output performance of TENGs even at a low triboelectric charge density, which is crucial for broad applications of the TENG toward self-powered systems, potentially to be a solution for improving the output performance of TENGs working in harsh environments.
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Affiliation(s)
- Xin Xia
- Department of Mechanical and Automation Engineering , The Chinese University of Hong Kong , Shatin , N.T., Hong Kong SAR 999077 , China
| | - Haoyu Wang
- Department of Mechanical and Automation Engineering , The Chinese University of Hong Kong , Shatin , N.T., Hong Kong SAR 999077 , China
- Shun Hing Institute of Advanced Engineering , The Chinese University of Hong Kong , Shatin , N.T., Hong Kong SAR 999077 , China
| | - Philippe Basset
- Université Paris-Est, ESYCOM, ESIEE Paris-CNAM-UPEM , Noisy-le-Grand 93162 , France
| | - Yuyan Zhu
- Department of Applied Biology and Chemical Technology , The Hong Kong Polytechnic University , Hung Hom, Kowloon , Hong Kong SAR 999077 , China
| | - Yunlong Zi
- Department of Mechanical and Automation Engineering , The Chinese University of Hong Kong , Shatin , N.T., Hong Kong SAR 999077 , China
- Shun Hing Institute of Advanced Engineering , The Chinese University of Hong Kong , Shatin , N.T., Hong Kong SAR 999077 , China
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Dong K, Peng X, Wang ZL. Fiber/Fabric-Based Piezoelectric and Triboelectric Nanogenerators for Flexible/Stretchable and Wearable Electronics and Artificial Intelligence. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1902549. [PMID: 31348590 DOI: 10.1002/adma.201902549] [Citation(s) in RCA: 300] [Impact Index Per Article: 75.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2019] [Revised: 05/27/2019] [Indexed: 05/17/2023]
Abstract
Integration of advanced nanogenerator technology with conventional textile processes fosters the emergence of textile-based nanogenerators (NGs), which will inevitably promote the rapid development and widespread applications of next-generation wearable electronics and multifaceted artificial intelligence systems. NGs endow smart textiles with mechanical energy harvesting and multifunctional self-powered sensing capabilities, while textiles provide a versatile flexible design carrier and extensive wearable application platform for their development. However, due to the lack of an effective interactive platform and communication channel between researchers specializing in NGs and those good at textiles, it is rather difficult to achieve fiber/fabric-based NGs with both excellent electrical output properties and outstanding textile-related performances. To this end, a critical review is presented on the current state of the arts of wearable fiber/fabric-based piezoelectric nanogenerators and triboelectric nanogenerators with respect to basic classifications, material selections, fabrication techniques, structural designs, and working principles, as well as potential applications. Furthermore, the potential difficulties and tough challenges that can impede their large-scale commercial applications are summarized and discussed. It is hoped that this review will not only deepen the ties between smart textiles and wearable NGs, but also push forward further research and applications of future wearable fiber/fabric-based NGs.
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Affiliation(s)
- Kai Dong
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Xiao Peng
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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Lin S, Xu L, Chi Wang A, Wang ZL. Quantifying electron-transfer in liquid-solid contact electrification and the formation of electric double-layer. Nat Commun 2020; 11:399. [PMID: 31964882 PMCID: PMC6972942 DOI: 10.1038/s41467-019-14278-9] [Citation(s) in RCA: 141] [Impact Index Per Article: 35.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2019] [Accepted: 12/16/2019] [Indexed: 12/04/2022] Open
Abstract
Contact electrification (CE) has been known for more than 2600 years but the nature of charge carriers and their transfer mechanisms still remain poorly understood, especially for the cases of liquid-solid CE. Here, we study the CE between liquids and solids and investigate the decay of CE charges on the solid surfaces after liquid-solid CE at different thermal conditions. The contribution of electron transfer is distinguished from that of ion transfer on the charged surfaces by using the theory of electron thermionic emission. Our study shows that there are both electron transfer and ion transfer in the liquid-solid CE. We reveal that solutes in the solution, pH value of the solution and the hydrophilicity of the solid affect the ratio of electron transfers to ion transfers. Further, we propose a two-step model of electron or/and ion transfer and demonstrate the formation of electric double-layer in liquid-solid CE.
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Affiliation(s)
- Shiquan Lin
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, PR China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, PR China
| | - Liang Xu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, PR China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, PR China
| | - Aurelia Chi Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, PR China.
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, PR China.
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
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Nie J, Ren Z, Xu L, Lin S, Zhan F, Chen X, Wang ZL. Probing Contact-Electrification-Induced Electron and Ion Transfers at a Liquid-Solid Interface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905696. [PMID: 31782572 DOI: 10.1002/adma.201905696] [Citation(s) in RCA: 125] [Impact Index Per Article: 31.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2019] [Revised: 11/03/2019] [Indexed: 05/11/2023]
Abstract
As a well-known phenomenon, contact electrification (CE) has been studied for decades. Although recent studies have proven that CE between two solids is primarily due to electron transfer, the mechanism for CE between liquid and solid remains controversial. The CE process between different liquids and polytetrafluoroethylene (PTFE) film is systematically studied to clarify the electrification mechanism of the solid-liquid interface. The CE between deionized water and PTFE can produce a surface charges density in the scale of 1 nC cm-2 , which is ten times higher than the calculation based on the pure ion-transfer model. Hence, electron transfer is likely the dominating effect for this liquid-solid electrification process. Meanwhile, as ion concentration increases, the ion adsorption on the PTFE hinders electron transfer and results in the suppression of the transferred charge amount. Furthermore, there is an obvious charge transfer between oil and PTFE, which further confirms the presence of electron transfer between liquid and solid, simply because there are no ions in oil droplets. It is demonstrated that electron transfer plays the dominant role during CE between liquids and solids, which directly impacts the traditional understanding of the formation of an electric double layer (EDL) at a liquid-solid interface in physical chemistry.
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Affiliation(s)
- Jinhui Nie
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zewei Ren
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liang Xu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Shiquan Lin
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Fei Zhan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xiangyu Chen
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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Lu Y, Feng S, Shen R, Xu Y, Hao Z, Yan Y, Zheng H, Yu X, Gao Q, Zhang P, Lin S. Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport. RESEARCH 2019; 2019:5832382. [PMID: 31922135 PMCID: PMC6946282 DOI: 10.34133/2019/5832382] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/22/2019] [Accepted: 11/01/2019] [Indexed: 12/03/2022]
Abstract
Static heterojunction-based electronic devices have been widely applied because carrier dynamic processes between semiconductors can be designed through band gap engineering. Herein, we demonstrate a tunable direct-current generator based on the dynamic heterojunction, whose mechanism is based on breaking the symmetry of drift and diffusion currents and rebounding hot carrier transport in dynamic heterojunctions. Furthermore, the output voltage can be delicately adjusted and enhanced with the interface energy level engineering of inserting dielectric layers. Under the ultrahigh interface electric field, hot electrons will still transfer across the interface through the tunneling and hopping effect. In particular, the intrinsic anisotropy of black phosphorus arising from the lattice structure produces extraordinary electronic, transport, and mechanical properties exploited in our dynamic heterojunction generator. Herein, the voltage of 6.1 V, current density of 124.0 A/m2, power density of 201.0 W/m2, and energy-conversion efficiency of 31.4% have been achieved based on the dynamic black phosphorus/AlN/Si heterojunction, which can be used to directly and synchronously light up light-emitting diodes. This direct-current generator has the potential to convert ubiquitous mechanical energy into electric energy and is a promising candidate for novel portable and miniaturized power sources in the in situ energy acquisition field.
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Affiliation(s)
- Yanghua Lu
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Sirui Feng
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Runjiang Shen
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yujun Xu
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zhenzhen Hao
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yanfei Yan
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Haonan Zheng
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xutao Yu
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Qiuyue Gao
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Panpan Zhang
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Shisheng Lin
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.,State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China
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Lu Y, Hao Z, Feng S, Shen R, Yan Y, Lin S. Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output. iScience 2019; 22:58-69. [PMID: 31751825 PMCID: PMC6931221 DOI: 10.1016/j.isci.2019.11.004] [Citation(s) in RCA: 44] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2019] [Revised: 10/25/2019] [Accepted: 11/01/2019] [Indexed: 11/25/2022] Open
Abstract
The static PN junction is the foundation of integrated circuits. Herein, we pioneer a high current density generation by mechanically moving N-type semiconductor over P-type semiconductor, named as the dynamic PN junction. The establishment and destruction of the depletion layer causes the redistribution and rebounding of diffusing carriers by the built-in field, similar to a capacitive charge/discharge process of PN junction capacitance during the movement. Through inserting dielectric layer at the interface of the dynamic PN junction, output voltage can be improved and designed numerically according to the energy level difference between the valence band of semiconductor and conduction band of dielectric layer. Especially, the dynamic MoS2/AlN/Si generator with open-circuit voltage of 5.1 V, short-circuit current density of 112.0 A/m2, power density of 130.0 W/m2, and power-conversion efficiency of 32.5% has been achieved, which can light up light-emitting diode timely and directly. This generator can continuously work for 1 h, demonstrating its great potential applications. High current density direct-current generator based on dynamic PN junctions Dynamic equilibrium between establishment and destruction of the depletion layer Capacitive discharge of PN junction capacitance caused by hot carriers rebounding Enhance and design voltage numerically by inserting dielectric layer at the interface
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Affiliation(s)
- Yanghua Lu
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zhenzhen Hao
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Sirui Feng
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Runjiang Shen
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yanfei Yan
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Shisheng Lin
- College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China; State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China.
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Mizzi CA, Lin AYW, Marks LD. Does Flexoelectricity Drive Triboelectricity? PHYSICAL REVIEW LETTERS 2019; 123:116103. [PMID: 31573269 DOI: 10.1103/physrevlett.123.116103] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2019] [Indexed: 06/10/2023]
Abstract
The triboelectric effect, charge transfer during sliding, is well established but the thermodynamic driver is not well understood. We hypothesize here that flexoelectric potential differences induced by inhomogeneous strains at nanoscale asperities drive tribocharge separation. Modeling single asperity elastic contacts suggests that nanoscale flexoelectric potential differences of ±1-10 V or larger arise during indentation and pull-off. This hypothesis agrees with several experimental observations, including bipolar charging during stick slip, inhomogeneous tribocharge patterns, charging between similar materials, and surface charge density measurements.
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Affiliation(s)
- C A Mizzi
- Department of Materials Science and Engineering Northwestern University, Evanston, Illinois 60208, USA
| | - A Y W Lin
- Department of Materials Science and Engineering Northwestern University, Evanston, Illinois 60208, USA
| | - L D Marks
- Department of Materials Science and Engineering Northwestern University, Evanston, Illinois 60208, USA
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66
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Lin S, Xu L, Zhu L, Chen X, Wang ZL. Electron Transfer in Nanoscale Contact Electrification: Photon Excitation Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1901418. [PMID: 31095783 DOI: 10.1002/adma.201901418] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2019] [Revised: 04/15/2019] [Indexed: 06/09/2023]
Abstract
Contact electrification (CE) (or triboelectrification) is a well-known phenomenon, and the identity of the charge carriers and their transfer mechanism have been discussed for decades. Recently, the species of transferred charges in the CE between a metal and a ceramic was revealed as electron transfer and its subsequent release is dominated by the thermionic emission process. Here, the release of CE-induced electrostatic charges on a dielectric surface under photon excitation is studied by varying the light intensity and wavelength, but under no significant raise in temperature. The results suggest that there exists a threshold photon energy for releasing the triboelectric charges from the surface, which is 4.1 eV (light wavelength at 300 nm) for SiO2 and 3.4 eV (light wavelength at 360 nm) for PVC; photons with energy smaller than this cannot effectively excite the surface electrostatic charges. This process is attributed to the photoelectron emission of the charges trapped in the surface states of the dielectric material. Further, a photoelectron emission model is proposed to describe light-induced charge decay on a dielectric surface. The findings provide an additional strong evidence about the electron transfer process in the CE between metals and dielectrics as well as polymers.
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Affiliation(s)
- Shiquan Lin
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liang Xu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Laipan Zhu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xiangyu Chen
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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