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Wang J, Wang C, Cai P, Luo Y, Cui Z, Loh XJ, Chen X. Artificial Sense Technology: Emulating and Extending Biological Senses. ACS NANO 2021; 15:18671-18678. [PMID: 34881877 DOI: 10.1021/acsnano.1c10313] [Citation(s) in RCA: 42] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Biological senses are critical for the survival of organisms. A great deal of attention has focused on elucidating the underlying physiological mechanisms of the senses, inspiring various sensing techniques. Despite progress in this area, gaps remain between the biological senses and conventional sensing techniques. In this Perspective, we propose the concept of artificial sense technology, which mimics the biological senses but differs in terms of objective sensing and intelligent feedback capabilities. We first summarize recent progress in the use of nanotechnologies to emulate the biological senses and then outline the advantages of artificial sense technology, which extend the capabilities of its biological counterparts. We envision artificial sense technology as a powerful perceptual interface that will play key roles in sensation substitution, digital healthcare, animal interactions, plant electronics, smart robots, and other areas that enrich the connections of the physical and virtual worlds.
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Affiliation(s)
- Jianwu Wang
- Innovative Centre for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Pingqiang Cai
- Chemistry and Biomedicine Innovation Center, Nanjing University, School of Medicine, Nanjing 210093, China
| | - Yifei Luo
- Institute of Materials Research and Engineering, Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, 138634 Singapore
| | - Zequn Cui
- Innovative Centre for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Xian Jun Loh
- Institute of Materials Research and Engineering, Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, 138634 Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
- Institute of Materials Research and Engineering, Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, 138634 Singapore
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Takakuwa M, Fukuda K, Yokota T, Inoue D, Hashizume D, Umezu S, Someya T. Direct gold bonding for flexible integrated electronics. SCIENCE ADVANCES 2021; 7:eabl6228. [PMID: 34936437 PMCID: PMC8694591 DOI: 10.1126/sciadv.abl6228] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Accepted: 11/05/2021] [Indexed: 06/14/2023]
Abstract
Flexible and stable interconnections are critical for the next generation of shape-conformable and wearable electronics. These interconnections should have metal-like conductivity and sufficiently low stiffness that does not compromise the flexibility of the device; moreover, they must be achieved using low-temperature processes to prevent device damage. However, conventional interconnection bonding methods require additional adhesive layers, making it challenging to achieve these characteristics simultaneously. Here, we develop and characterize water vapor plasma–assisted bonding (WVPAB) that enables direct bonding of gold electrodes deposited on ultrathin polymer films. WVPAB bonds rough gold electrodes at room temperature and atmospheric pressure in ambient air. Hydroxyl groups generated by the plasma assist bonding between two gold surfaces, allowing the formation of a strong and stable interface. The applicability of WVPAB-mediated connections to ultrathin electronic systems was also demonstrated, and ultraflexible organic photovoltaics and light-emitting diodes fabricated on separate films were successfully interconnected via ultrathin wiring films.
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Affiliation(s)
- Masahito Takakuwa
- Department of Modern Mechanical Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
- Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Kenjiro Fukuda
- Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Tomoyuki Yokota
- Electrical and Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Daishi Inoue
- Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Daisuke Hashizume
- Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Shinjiro Umezu
- Department of Modern Mechanical Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
| | - Takao Someya
- Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Electrical and Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Woo S, Ryu G, Kang SS, Kim TS, Hong N, Han JH, Chu RJ, Lee IH, Jung D, Choi WJ. High-Performance Flexible InAs Thin-Film Photodetector Arrays with Heteroepitaxial Growth Using an Abruptly Graded In xAl 1-xAs Buffer. ACS APPLIED MATERIALS & INTERFACES 2021; 13:55648-55655. [PMID: 34779602 DOI: 10.1021/acsami.1c14687] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Current infrared thermal image sensors are mainly based on planar firm substrates, but the rigid form factor appears to restrain the versatility of their applications. For wearable health monitoring and implanted biomedical sensing, transfer of active device layers onto a flexible substrate is required while controlling the high-quality crystalline interface. Here, we demonstrate high-detectivity flexible InAs thin-film mid-infrared photodetector arrays through high-yield wafer bonding and a heteroepitaxial lift-off process. An abruptly graded InxAl1-xAs (0.5 < x < 1) buffer was found to drastically improve the lift-off interface morphology and reduce the threading dislocation density twice, compared to the conventional linear grading method. Also, our flexible InAs photodetectors showed excellent optical performance with high mechanical robustness, a peak room-temperature specific detectivity of 1.21 × 109 cm-Hz1/2/W at 3.4 μm, and excellent device reliability. This flexible InAs photodetector enabled by the heteroepitaxial lift-off method shows promise for next-generation thermal image sensors.
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Affiliation(s)
- Seungwan Woo
- Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Geunhwan Ryu
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Soo Seok Kang
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Tae Soo Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea
| | - Namgi Hong
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Jae-Hoon Han
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Rafael Jumar Chu
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Division of Nano and Information Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea
| | - In-Hwan Lee
- Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea
| | - Daehwan Jung
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Division of Nano and Information Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea
| | - Won Jun Choi
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea
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Yang X, Chen YH, Xia F, Sawan M. Photoacoustic imaging for monitoring of stroke diseases: A review. PHOTOACOUSTICS 2021; 23:100287. [PMID: 34401324 PMCID: PMC8353507 DOI: 10.1016/j.pacs.2021.100287] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2021] [Revised: 07/02/2021] [Accepted: 07/16/2021] [Indexed: 05/14/2023]
Abstract
Stroke is the leading cause of death and disability after ischemic heart disease. However, there is lacking a non-invasive long-time monitoring technique for stroke diagnosis and therapy. The photoacoustic imaging approach reconstructs images of an object based on the energy excitation by optical absorption and its conversion to acoustic waves, due to corresponding thermoelastic expansion, which has optical resolution and acoustic propagation. This emerging functional imaging method is a non-invasive technique. Due to its precision, this method is particularly attractive for stroke monitoring purpose. In this paper, we review the achievements of this technology and its applications on stroke, as well as the development status in both animal and human applications. Also, various photoacoustic systems and multi-modality photoacoustic imaging are introduced as for potential clinical applications. Finally, the challenges of photoacoustic imaging for monitoring stroke are discussed.
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Affiliation(s)
- Xi Yang
- Zhejiang University, Hangzhou, 310024, Zhejiang, China
- CenBRAIN Lab., School of Engineering, Westlake University, Hangzhou, 310024, Zhejiang, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, Zhejiang, China
| | - Yun-Hsuan Chen
- CenBRAIN Lab., School of Engineering, Westlake University, Hangzhou, 310024, Zhejiang, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, Zhejiang, China
| | - Fen Xia
- Zhejiang University, Hangzhou, 310024, Zhejiang, China
- CenBRAIN Lab., School of Engineering, Westlake University, Hangzhou, 310024, Zhejiang, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, Zhejiang, China
| | - Mohamad Sawan
- CenBRAIN Lab., School of Engineering, Westlake University, Hangzhou, 310024, Zhejiang, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, Zhejiang, China
- Corresponding author at: CenBRAIN Lab., School of Engineering, Westlake University, Hangzhou, 310024, Zhejiang, China.
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Abstract
Soft wearable electronics are rapidly developing through exploration of new materials, fabrication approaches, and design concepts. Although there have been many efforts for decades, a resurgence of interest in liquid metals (LMs) for sensing and wiring functional properties of materials in soft wearable electronics has brought great advances in wearable electronics and materials. Various forms of LMs enable many routes to fabricate flexible and stretchable sensors, circuits, and functional wearables with many desirable properties. This review article presents a systematic overview of recent progresses in LM-enabled wearable electronics that have been achieved through material innovations and the discovery of new fabrication approaches and design architectures. We also present applications of wearable LM technologies for physiological sensing, activity tracking, and energy harvesting. Finally, we discuss a perspective on future opportunities and challenges for wearable LM electronics as this field continues to grow.
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Affiliation(s)
- Phillip Won
- Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA
- Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
| | - Seongmin Jeong
- Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
| | - Carmel Majidi
- Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA
| | - Seung Hwan Ko
- Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
- Institute of Advanced Machines and Design / Institute of Engineering Research, Seoul National University, Seoul 08826, Korea
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A Review of the Progress of Thin-Film Transistors and Their Technologies for Flexible Electronics. MICROMACHINES 2021; 12:mi12060655. [PMID: 34199683 PMCID: PMC8227224 DOI: 10.3390/mi12060655] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 05/26/2021] [Accepted: 05/27/2021] [Indexed: 12/30/2022]
Abstract
Flexible electronics enable various technologies to be integrated into daily life and fuel the quests to develop revolutionary applications, such as artificial skins, intelligent textiles, e-skin patches, and on-skin displays. Mechanical characteristics, including the total thickness and the bending radius, are of paramount importance for physically flexible electronics. However, the limitation regarding semiconductor fabrication challenges the mechanical flexibility of thin-film electronics. Thin-Film Transistors (TFTs) are a key component in thin-film electronics that restrict the flexibility of thin-film systems. Here, we provide a brief overview of the trends of the last three decades in the physical flexibility of various semiconducting technologies, including amorphous-silicon, polycrystalline silicon, oxides, carbon nanotubes, and organics. The study demonstrates the trends of the mechanical properties, including the total thickness and the bending radius, and provides a vision for the future of flexible TFTs.
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