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Zhao W, Yan Y, Chen X, Wang T. Combining printing and nanoparticle assembly: Methodology and application of nanoparticle patterning. Innovation (N Y) 2022; 3:100253. [PMID: 35602121 PMCID: PMC9117940 DOI: 10.1016/j.xinn.2022.100253] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 04/24/2022] [Indexed: 11/18/2022] Open
Abstract
Functional nanoparticles (NPs) with unique photoelectric, mechanical, magnetic, and chemical properties have attracted considerable attention. Aggregated NPs rather than individual NPs are generally required for sensing, electronics, and catalysis. However, the transformation of functional NP aggregates into scalable, controllable, and affordable functional devices remains challenging. Printing is a promising additive manufacturing technology for fabricating devices from NP building blocks because of its capabilities for rapid prototyping and versatile multifunctional manufacturing. This paper reviews recent advances in NP patterning based on the combination of self-assembly and printing technologies (including two-, three-, and four-dimensional printing), introduces the basic characteristics of these methods, and discusses various fields of NP patterning applications. Nanoparticles (NPs) printing assembly is a good solution for patterned devices NPs assembly can be combined with 2D, 3D, and 4D printing technologies A variety of ink-dispersed NPs are available for printing assembly NPs printing assembly technology is applied for nanosensing, energy storage, photodetector
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Affiliation(s)
- Weidong Zhao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Life and Health Research Institute, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Yanling Yan
- National Engineering Research Center for Advanced Polymer Processing Technology, College of Materials Science and Engineering, Henan Province Industrial Technology Research Institute of Resources and Materials, Key Laboratory of Advanced Material Processing & Mold (Ministry of Education), Zhengzhou University, Zhengzhou 450002, China
- Life and Health Research Institute, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Xiangyu Chen
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Life and Health Research Institute, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Tie Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Life and Health Research Institute, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384, China
- Corresponding author
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Li Z, Hong E, Zhang X, Deng M, Fang X. Perovskite-Type 2D Materials for High-Performance Photodetectors. J Phys Chem Lett 2022; 13:1215-1225. [PMID: 35089041 DOI: 10.1021/acs.jpclett.1c04225] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Photodetectors are light sensors in widespread use in image sensing, optical communication, and consumer electronics. In current smart optoelectronic technology, conventional semiconductors have encountered a bottleneck caused by inflexibility and opacity. With the ever-increasing demands for versatile optoelectronic applications, perovskite-type 2D materials demonstrate great potential for advanced photodetectors inspired by molecularly thin 2D materials. Through the reduction of thickness to thin or molecularly thin levels, single-crystalline 2D perovskites can exhibit superior optoelectronic performance characteristics, such as tunable absorption property by chemical design, enhanced carrier separation by remarkable photosensing capability, and improved carrier extraction by versatile band engineering. More importantly, perovskite-type 2D materials exhibit great potential for large-scale monolithic integration to achieve all-in-one sensing-memory-computing optoelectronic devices. In this Perspective, recent progress in 2D perovskite-based photodetectors is presented in detail. The focus is on growth strategies for reducing thickness, thickness-dependent optical and electrical properties, device engineering, heterojunction fabrication, and device performance. Finally, the current challenges and future prospects in this field are presented.
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Affiliation(s)
- Ziqing Li
- Institute of Optoelectronics, Fudan University, Shanghai 200433, P.R. China
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
| | - Enliu Hong
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
| | - Xinyu Zhang
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
| | - Ming Deng
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
| | - Xiaosheng Fang
- Institute of Optoelectronics, Fudan University, Shanghai 200433, P.R. China
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
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Weng W, Chen Q, Fan Y, Li Z, Huang H, Wu H, Ji C, Lin W. A lead-free halide hybrid perovskite (TMHD)BiCl 5 for ultraviolet photodetection. Inorg Chem Front 2022. [DOI: 10.1039/d2qi01030e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Lead halide hybrid perovskites with a wide bandgap (e.g., CH3NH3PbCl3) have gained tremendous attention in the field of ultraviolet (UV) photodetection due to their brilliant optoelectronic activity.
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Affiliation(s)
- Wen Weng
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, 350002, P.R. China
- University of the Chinese Academy of Sciences, Beijing 100039, P.R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectcronic Information of China, Fuzhou, 350108, P.R. China
- Advanced Energy Science and Technology Guangdong Laboratory, Huizhou, 116023, P.R. China
| | - Qin Chen
- University of the Chinese Academy of Sciences, Beijing 100039, P.R. China
| | - Yipeng Fan
- University of the Chinese Academy of Sciences, Beijing 100039, P.R. China
| | - Zhou Li
- University of the Chinese Academy of Sciences, Beijing 100039, P.R. China
| | - Haizhou Huang
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, 350002, P.R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectcronic Information of China, Fuzhou, 350108, P.R. China
| | - Hongchun Wu
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, 350002, P.R. China
- University of the Chinese Academy of Sciences, Beijing 100039, P.R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectcronic Information of China, Fuzhou, 350108, P.R. China
| | - Chengmin Ji
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, 350002, P.R. China
- University of the Chinese Academy of Sciences, Beijing 100039, P.R. China
| | - Wenxiong Lin
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, 350002, P.R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectcronic Information of China, Fuzhou, 350108, P.R. China
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Huang X, Guo Y, Liu Y. Perovskite photodetectors and their application in artificial photonic synapses. Chem Commun (Camb) 2021; 57:11429-11442. [PMID: 34642713 DOI: 10.1039/d1cc04447h] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Organic-inorganic hybrid perovskites exhibit superior optoelectrical properties and have been widely used in photodetectors. Perovskite photodetectors with excellent detectivity have great potential for developing artificial photonic synapses which can merge data transmission and storage. They are highly desired for next generation neuromorphic computing. The recent progress of perovskite photodetectors and their application in artificial photonic synapses are summarized in this review. Firstly, the key performance parameters of photodetectors are briefly introduced. Secondly, the recent research progress of photodetectors including photoconductors, photodiodes, and phototransistors is summarized. Finally, the applications of perovskite photodetectors in artificial photonic synapses in recent years are highlighted. All these demonstrate the great potential of perovskite photonic synapses for the development of artificial intelligence.
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Affiliation(s)
- Xin Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
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