51
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Khaksaran MH, Kaya II. Spontaneous Nucleation and Growth of Graphene Flakes on Copper Foil in the Absence of External Carbon Precursor in Chemical Vapor Deposition. ACS OMEGA 2018; 3:12575-12583. [PMID: 31457991 PMCID: PMC6644764 DOI: 10.1021/acsomega.8b01652] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2018] [Accepted: 09/20/2018] [Indexed: 06/09/2023]
Abstract
In this work, we uncover a mechanism initiating spontaneous nucleation of graphene flakes on copper foil during the annealing phase of chemical vapor deposition (CVD) process. We demonstrate that the carbon in the bulk of copper foil is the source of nucleation. Although carbon solubility in a pure copper bulk is very low, excess carbon can be embedded inside the copper foil during the foil production process. Using time-of-flight secondary ion mass spectrometry, we measured the distribution profile of carbon atoms inside the copper foils and its variation by thermal annealing. We also studied the role of hydrogen in the segregation of carbon from the bulk to the surface of copper during annealing by scanning electron microscopy and Raman analysis. We found that carbon atoms diffuse out from the copper foil and accumulate on its surface during annealing in the presence of hydrogen. Consequently, graphene crystals can be nucleated and grown while "any external" carbon precursor was entirely avoided. To our knowledge, this is the first time that such growth has been demonstrated to take place. We believe that this finding brings a new insight into the initial nucleation of graphene in the CVD process and helps to achieve reproducible growth recipes.
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Affiliation(s)
- M. Hadi Khaksaran
- Faculty
of Engineering and Natural Sciences, Sabanci
University, 34956 Istanbul, Turkey
| | - Ismet I. Kaya
- Sabanci
University SUNUM Nanotechnology Research Center, TR-34956 Istanbul, Turkey
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52
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Lin L, Deng B, Sun J, Peng H, Liu Z. Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene. Chem Rev 2018; 118:9281-9343. [PMID: 30207458 DOI: 10.1021/acs.chemrev.8b00325] [Citation(s) in RCA: 97] [Impact Index Per Article: 16.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.
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Affiliation(s)
- Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Bing Deng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Jingyu Sun
- Soochow Institute for Energy and Materials Innovations (SIEMIS), College of Physics, Optoelectronics and Energy , Soochow University , Suzhou 215006 , P. R. China.,Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.,Beijing Graphene Institute (BGI) , Beijing 100095 , P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.,Beijing Graphene Institute (BGI) , Beijing 100095 , P. R. China
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53
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Zhu Z, Zhan L, Shih TM, Wan W, Lu J, Huang J, Guo S, Zhou Y, Cai W. Critical Annealing Temperature for Stacking Orientation of Bilayer Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1802498. [PMID: 30160374 DOI: 10.1002/smll.201802498] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2018] [Revised: 07/26/2018] [Indexed: 06/08/2023]
Abstract
It is rarely reported that stacking orientations of bilayer graphene (BLG) can be manipulated by the annealing process. Most investigators have painstakingly fabricated this BLG by chemical vapor deposition growth or mechanical means. Here, it is discovered that, at ≈600 °C, called the critical annealing temperature (CAT), most stacking orientations collapse into strongly coupled or AB-stacked states. This phenomenon is governed (i) macroscopically by the stress generation and release in top graphene domains, evolving from mild ripples to sharp billows in certain local areas, and (ii) microscopically by the principle of minimal potential obeyed by carbon atoms that have acquired sufficient thermal energy at CAT. Conspicuously, evolutions of stacking orientations in Raman mappings under various annealing temperatures are observed. Furthermore, MoS2 synthesized on BLG is used to directly observe crystal orientations of top and bottom graphene layers. The finding of CAT provides a guide for the fabrication of strongly coupled or AB-stacked BLG, and can be applied to aligning other 2D heterostructures.
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Affiliation(s)
- Zhenwei Zhu
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
- Department of Mechanical Engineering and Materials Science, Rice University, Houston, TX, 77005, USA
| | - Linjie Zhan
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Tien-Mo Shih
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Tianming Physics Research Institute, Changtai, 363900, China
| | - Wen Wan
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Jie Lu
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Junjie Huang
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Shengshi Guo
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Yinghui Zhou
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
| | - Weiwei Cai
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen, 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, China
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54
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Qian Y, Kang DJ. Large-Area High-Quality AB-Stacked Bilayer Graphene on h-BN/Pt Foil by Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2018; 10:29069-29075. [PMID: 30084250 DOI: 10.1021/acsami.8b06862] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Large-area, high-quality bilayer graphene (BLG) has attracted great interest because of its immense potential for many viable applications. However, its growth is still greatly limited owing to its small size and low carrier mobility. In this article, we report the successful growth of large-area, high-quality AB-stacked BLG on hexagonal boron nitride (h-BN)/Pt foil by chemical vapor deposition (CVD). Optical microscopy and scanning electron microscopy observations reveal the formation of uniform and continuous BLG films with sizes of up to 500 μm, which are 4-5 times larger than those reported elsewhere for CVD-grown BLG films. A large carrier mobility of up to 9000 cm2 V-1 s-1 is observed for the BLG films grown on h-BN/Pt foils under ambient conditions. We also propose a plausible growth mechanism of BLG growth on h-BN/Pt foils. Our findings will contribute for the better understanding of the fundamental BLG physics and the development of BLG-based devices.
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Affiliation(s)
- Yongteng Qian
- Department of Physics and Institute of Basic Science , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Dae Joon Kang
- Department of Physics and Institute of Basic Science , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
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55
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Nguyen P, Behura SK, Seacrist MR, Berry V. Intergrain Diffusion of Carbon Radical for Wafer-Scale, Direct Growth of Graphene on Silicon-Based Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2018; 10:26517-26525. [PMID: 30009598 DOI: 10.1021/acsami.8b07655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Graphene intrinsically hosts charge-carriers with ultrahigh mobility and possesses a high quantum capacitance, which are attractive attributes for nanoelectronic applications requiring graphene-on-substrate base architecture. Most of the current techniques for graphene production rely on the growth on metal catalyst surfaces, followed by a contamination-prone transfer process to put graphene on a desired dielectric substrate. Therefore, a direct graphene deposition process on dielectric surfaces is crucial to avoid polymer-adsorption-related contamination from the transfer process. Here, we present a chemical-diffusion mechanism of a process for transfer-free growth of graphene on silicon-based gate-dielectric substrates via low-pressure chemical vapor deposition. The process relies on the diffusion of catalytically produced carbon radicals through polycrystalline copper (Cu) grain boundaries and their crystallization at the interface of Cu and underneath silicon-based gate-dielectric substrates. The graphene produced exhibits low-defect multilayer domains ( La ∼ 140 nm) with turbostratic orientations as revealed by selected area electron diffraction. Further, graphene growth between Cu and the substrate was 2-fold faster on SiO2/Si(111) substrate than on SiO2/Si(100). The process parameters such as growth temperature and gas compositions (hydrogen (H2)/methane (CH4) flow rate ratio) play critical roles in the formation of high-quality graphene films. The low-temperature back-gating charge transport measurements of the interfacial graphene show density-independent mobility for holes and electrons. Consequently, the analysis of electronic transport at various temperatures reveals a dominant Coulombic scattering, a thermal activation energy (2.0 ± 0.2 meV), and two-dimensional hopping conduction in the graphene field-effect transistor. A band overlapping energy of 2.3 ± 0.4 meV is estimated by employing the simple two-band model.
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Affiliation(s)
- Phong Nguyen
- Department of Chemical Engineering , University of Illinois at Chicago , 810 S Clinton Street , Chicago , Illinois 60607 , United States
| | - Sanjay K Behura
- Department of Chemical Engineering , University of Illinois at Chicago , 810 S Clinton Street , Chicago , Illinois 60607 , United States
| | - Michael R Seacrist
- SunEdison Semiconductor , 501 Pearl Drive , Saint Peters , Missouri 63376 , United States
| | - Vikas Berry
- Department of Chemical Engineering , University of Illinois at Chicago , 810 S Clinton Street , Chicago , Illinois 60607 , United States
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56
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George G, Sisupal SB, Tomy T, Kumaran A, Vadivelu P, Suvekbala V, Sivaram S, Ragupathy L. Facile, environmentally benign and scalable approach to produce pristine few layers graphene suitable for preparing biocompatible polymer nanocomposites. Sci Rep 2018; 8:11228. [PMID: 30046158 PMCID: PMC6060110 DOI: 10.1038/s41598-018-28560-1] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2018] [Accepted: 05/08/2018] [Indexed: 01/08/2023] Open
Abstract
The success of developing graphene based biomaterials depends on its ease of synthesis, use of environmentally benign methods and low toxicity of the chemicals involved as well as biocompatibility of the final products/devices. We report, herein, a simple, scalable and safe method to produce defect free few layers graphene using naturally available phenolics i.e. curcumin/tetrahydrocurcumin/quercetin, as solid-phase exfoliating agents with a productivity of ∼45 g/batch (D/G ≤ 0.54 and D/D' ≤ 1.23). The production method can also be employed in liquid-phase using a ball mill (20 g/batch, D/G ≤ 0.23 and D/D' ≤ 1.12) and a sand grinder (10 g/batch, D/G ≤ 0.11 and D/D∼ ≤ 0.78). The combined effect of π-π interaction and charge transfer (from curcumin to graphene) is postulated to be the driving force for efficient exfoliation of graphite. The yielded graphene was mixed with the natural rubber (NR) latex to produce thin film nanocomposites, which show superior tensile strength with low modulus and no loss of % elongation at break. In-vitro and in-vivo investigations demonstrate that the prepared nanocomposite is biocompatible. This approach could be useful for the production of materials suitable in products (gloves/condoms/catheters), which come in contact with body parts/body fluids.
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Affiliation(s)
- Gejo George
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariam (P.O), Trivandrum, 695017, India
| | - Suja Bhargavan Sisupal
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariam (P.O), Trivandrum, 695017, India
| | - Teenu Tomy
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariam (P.O), Trivandrum, 695017, India
| | - Alaganandam Kumaran
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariam (P.O), Trivandrum, 695017, India
| | - Prabha Vadivelu
- CSIR-National Institute for Interdisciplinary Science and Technology, Industrial Estate (P.O), Pappanamcode, Trivandrum, 695019, India
| | - Vemparthan Suvekbala
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariam (P.O), Trivandrum, 695017, India
| | - Swaminathan Sivaram
- Polymers and Advanced Materials Laboratory, National Chemical Laboratory, Dr. Homi Bhabha Road, Pune, 411008, India
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57
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Laser Scribed Graphene Cathode for Next Generation of High Performance Hybrid Supercapacitors. Sci Rep 2018; 8:8179. [PMID: 29802281 PMCID: PMC5970221 DOI: 10.1038/s41598-018-26503-4] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2017] [Accepted: 05/08/2018] [Indexed: 11/23/2022] Open
Abstract
Hybrid supercapacitors have been regarded as next-generation energy storage devices due to their outstanding performances. However, hybrid supercapacitors remain a great challenge to enhance the energy density of hybrid supercapacitors. Herein, a novel approach for high-energy density hybrid supercapacitors based on a laser scribed graphene cathode and AlPO4-carbon hybrid coated H2Ti12O25 (LSG/H-HTO) was designed. Benefiting from high-energy laser scribed graphene and high-power H-HTO, it was demonstrated that LSG/H-HTO delivers superior energy and power densities with excellent cyclability. Compared to previous reports on other hybrid supercapacitors, LSG/H-HTO electrode composition shows extraordinary energy densities of ~70.8 Wh/kg and power densities of ~5191.9 W/kg. Therefore, LSG/H-HTO can be regarded as a promising milestone in hybrid supercapacitors.
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58
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Xu X, Liu C, Sun Z, Cao T, Zhang Z, Wang E, Liu Z, Liu K. Interfacial engineering in graphene bandgap. Chem Soc Rev 2018. [PMID: 29513306 DOI: 10.1039/c7cs00836h] [Citation(s) in RCA: 63] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Graphene exhibits superior mechanical strength, high thermal conductivity, strong light-matter interactions, and, in particular, exceptional electronic properties. These merits make graphene an outstanding material for numerous potential applications. However, a graphene-based high-performance transistor, which is the most appealing application, has not yet been produced, which is mainly due to the absence of an intrinsic electronic bandgap in this material. Therefore, bandgap opening in graphene is urgently needed, and great efforts have been made regarding this topic over the past decade. In this review article, we summarise recent theoretical and experimental advances in interfacial engineering to achieve bandgap opening. These developments are divided into two categories: chemical engineering and physical engineering. Chemical engineering is usually destructive to the pristine graphene lattice via chemical functionalization, the introduction of defects, doping, chemical bonds with substrates, and quantum confinement; the latter largely maintains the atomic structure of graphene intact and includes the application of an external field, interactions with substrates, physical adsorption, strain, electron many-body effects and spin-orbit coupling. Although these pioneering works have not met all the requirements for electronic applications of graphene at once, they hold great promise in this direction and may eventually lead to future applications of graphene in semiconductor electronics and beyond.
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Affiliation(s)
- Xiaozhi Xu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
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59
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Gao Z, Zhang Q, Naylor CH, Kim Y, Abidi IH, Ping J, Ducos P, Zauberman J, Zhao MQ, Rappe AM, Luo Z, Ren L, Johnson ATC. Crystalline Bilayer Graphene with Preferential Stacking from Ni-Cu Gradient Alloy. ACS NANO 2018; 12:2275-2282. [PMID: 29509401 DOI: 10.1021/acsnano.7b06992] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We developed a high-yield synthesis of highly crystalline bilayer graphene (BLG) with two preferential stacking modes using a Ni-Cu gradient alloy growth substrate. Previously reported approaches for BLG growth include flat growth substrates of Cu or Ni-Cu uniform alloys and "copper pocket" structures. Use of flat substrates has the advantage of being scalable, but the growth mechanism is either "surface limited" (for Cu) or carbon precipitation (for uniform Ni-Cu), which results in multicrystalline BLG grains. For copper pockets, growth proceeds through a carbon back-diffusion mechanism, which leads to the formation of highly crystalline BLG, but scaling of the copper pocket structure is expected to be difficult. Here we demonstrate a Ni-Cu gradient alloy that combines the advantages of these earlier methods: the substrate is flat, so easy to scale, while growth proceeds by a carbon back-diffusion mechanism leading to high-yield growth of BLG with high crystallinity. The BLG layer stacking was almost exclusively Bernal or twisted with an angle of 30°, consistent with first-principles calculations we conducted. Furthermore, we demonstrated scalable production of transistor arrays based crystalline Bernal-stacked BLG with a band gap that was tunable at room temperature.
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Affiliation(s)
- Zhaoli Gao
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Qicheng Zhang
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
- Department of Chemical and Biomolecular Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Carl H Naylor
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Youngkuk Kim
- The Makineni Theoretical Laboratories, Department of Chemistry , University of Pennsylvania , Philadelphia , Pennsylvania 19104-632 , United States
- Department of Physics , Sungkyunkwan University , Suwon 16419 , Korea
| | - Irfan Haider Abidi
- Department of Chemical and Biomolecular Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Jinglei Ping
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Pedro Ducos
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
- Departamento de Física , Universidad San Francisco de Quito , Quito 170901 , Ecuador
| | - Jonathan Zauberman
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Meng-Qiang Zhao
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Andrew M Rappe
- The Makineni Theoretical Laboratories, Department of Chemistry , University of Pennsylvania , Philadelphia , Pennsylvania 19104-632 , United States
| | - Zhengtang Luo
- Department of Chemical and Biomolecular Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Li Ren
- School of Materials Science and Engineering , South China University of Technology , Guangzhou 510006 , People's Republic of China
| | - Alan T Charlie Johnson
- Department of Physics and Astronomy , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
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60
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Evans PJ, Ouyang J, Favereau L, Crassous J, Fernández I, Perles J, Martín N. Synthesis of a Helical Bilayer Nanographene. Angew Chem Int Ed Engl 2018. [DOI: 10.1002/ange.201800798] [Citation(s) in RCA: 58] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Affiliation(s)
- Paul J. Evans
- Departamento de Química Orgánica I; Facultad de Ciencias Químicas; Universidad Complutense de Madrid; Ciudad Universitaria s/n 28040 Madrid Spain
| | - Jiangkun Ouyang
- Institut des Sciences Chimiques de Rennes; UMR 6226 CNRS-; Univ. Rennes; Campus de Beaulieu 35042 Rennes Cedex France
| | - Ludovic Favereau
- Institut des Sciences Chimiques de Rennes; UMR 6226 CNRS-; Univ. Rennes; Campus de Beaulieu 35042 Rennes Cedex France
| | - Jeanne Crassous
- Institut des Sciences Chimiques de Rennes; UMR 6226 CNRS-; Univ. Rennes; Campus de Beaulieu 35042 Rennes Cedex France
| | - Israel Fernández
- Departamento de Química Orgánica I; Facultad de Ciencias Químicas; Universidad Complutense de Madrid; Ciudad Universitaria s/n 28040 Madrid Spain
| | - Josefina Perles
- Single Crystal X-ray Diffraction Laboratory; Interdepartmental Research Service (SIdI); Universidad Autónoma de Madrid; Cantoblanco 28049 Madrid Spain
| | - Nazario Martín
- Departamento de Química Orgánica I; Facultad de Ciencias Químicas; Universidad Complutense de Madrid; Ciudad Universitaria s/n 28040 Madrid Spain
- IMDEA-Nanociencia; C/Faraday; 9, Campus de la Universidad Autónoma de Madrid 28049 Madrid Spain
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61
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Evans PJ, Ouyang J, Favereau L, Crassous J, Fernández I, Perles J, Martín N. Synthesis of a Helical Bilayer Nanographene. Angew Chem Int Ed Engl 2018; 57:6774-6779. [PMID: 29447436 DOI: 10.1002/anie.201800798] [Citation(s) in RCA: 136] [Impact Index Per Article: 22.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2018] [Indexed: 01/07/2023]
Abstract
A rigid, inherently chiral bilayer nanographene has been synthesized as both the racemate and enantioenriched M isomer (with 93 % ee) in three steps from established helicenes. This folded nanographene is composed of two hexa-peri-hexabenzocoronene layers fused to a [10]helicene, with an interlayer distance of 3.6 Å as determined by X-ray crystallography. The rigidity of the helicene linker forces the layers to adopt a nearly aligned AA-stacked conformation, rarely observed in few-layer graphene. By combining the advantages of nanographenes and helicenes, we have constructed a bilayer system of 30 fused benzene rings that is also chiral, rigid, and remains soluble in common organic solvents. We present this as a molecular model system of bilayer graphene, with properties of interest in a variety of potential applications.
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Affiliation(s)
- Paul J Evans
- Departamento de Química Orgánica I, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, 28040, Madrid, Spain
| | - Jiangkun Ouyang
- Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS-, Univ. Rennes, Campus de Beaulieu, 35042, Rennes Cedex, France
| | - Ludovic Favereau
- Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS-, Univ. Rennes, Campus de Beaulieu, 35042, Rennes Cedex, France
| | - Jeanne Crassous
- Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS-, Univ. Rennes, Campus de Beaulieu, 35042, Rennes Cedex, France
| | - Israel Fernández
- Departamento de Química Orgánica I, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, 28040, Madrid, Spain
| | - Josefina Perles
- Single Crystal X-ray Diffraction Laboratory, Interdepartmental Research Service (SIdI), Universidad Autónoma de Madrid, Cantoblanco, 28049, Madrid, Spain
| | - Nazario Martín
- Departamento de Química Orgánica I, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, 28040, Madrid, Spain.,IMDEA-Nanociencia, C/Faraday, 9, Campus de la Universidad Autónoma de Madrid, 28049, Madrid, Spain
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62
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Pham VP, Jang HS, Whang D, Choi JY. Direct growth of graphene on rigid and flexible substrates: progress, applications, and challenges. Chem Soc Rev 2018; 46:6276-6300. [PMID: 28857098 DOI: 10.1039/c7cs00224f] [Citation(s) in RCA: 64] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Graphene has recently been attracting considerable interest because of its exceptional conductivity, mechanical strength, thermal stability, etc. Graphene-based devices exhibit high potential for applications in electronics, optoelectronics, and energy harvesting. In this paper, we review various growth strategies including metal-catalyzed transfer-free growth and direct-growth of graphene on flexible and rigid insulating substrates which are "major issues" for avoiding the complicated transfer processes that cause graphene defects, residues, tears and performance degradation in graphene-based functional devices. Recent advances in practical applications based on "direct-grown graphene" are discussed. Finally, several important directions, challenges and perspectives in the commercialization of 'direct growth of graphene' are also discussed and addressed.
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Affiliation(s)
- Viet Phuong Pham
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, Republic of Korea.
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63
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Habib MR, Liang T, Yu X, Pi X, Liu Y, Xu M. A review of theoretical study of graphene chemical vapor deposition synthesis on metals: nucleation, growth, and the role of hydrogen and oxygen. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:036501. [PMID: 29355108 DOI: 10.1088/1361-6633/aa9bbf] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Graphene has attracted intense research interest due to its extraordinary properties and great application potential. Various methods have been proposed for the synthesis of graphene, among which chemical vapor deposition has drawn a great deal of attention for synthesizing large-area and high-quality graphene. Theoretical understanding of the synthesis mechanism is crucial for optimizing the experimental design for desired graphene production. In this review, we discuss the three fundamental steps of graphene synthesis in details, i.e. (1) decomposition of carbon feedstocks and formation of various active carbon species, (2) nucleation, and (3) attachment and extension. We provide a complete scenario of graphene synthesis on metal surfaces at atomistic level by means of density functional theory, molecular dynamics (MD), Monte Carlo (MC) and their combination and interface with other simulation methods such as quantum mechanical molecular dynamics, density functional tight binding molecular dynamics, and combination of MD and MC. We also address the latest investigation of the influences of the hydrogen and oxygen on the synthesis and the quality of the synthesized graphene.
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Affiliation(s)
- Mohammad Rezwan Habib
- State Key Laboratory of Silicon Materials, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
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64
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Zeng J, Ji X, Ma Y, Zhang Z, Wang S, Ren Z, Zhi C, Yu J. 3D Graphene Fibers Grown by Thermal Chemical Vapor Deposition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1705380. [PMID: 29423926 DOI: 10.1002/adma.201705380] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2017] [Revised: 11/27/2017] [Indexed: 06/08/2023]
Abstract
3D assembly of graphene sheets (GSs) is important for preserving the merits of the single-atomic-layered structure. Simultaneously, vertical growth of GSs has long been a challenge for thermal chemical vapor deposition (CVD). Here, vertical growth of the GSs is achieved in a thermal CVD reactor and a novel 3D graphene structure, 3D graphene fibers (3DGFs), is developed. The 3DGFs are prepared by carbonizing electrospun polyacrylonitrile fibers in NH3 and subsequently in situ growing the radially oriented GSs using thermal CVD. The GSs on the 3DGFs are densely arranged and interconnected with the edges fully exposed on the surface, resulting in high performances in multiple aspects such as electrical conductivity (3.4 × 104 -1.2 × 105 S m-1 ), electromagnetic shielding (60 932 dB cm2 g-1 ), and superhydrophobicity and superoleophilicity, which are far superior to the existing 3D graphene materials. With the extraordinary properties along with the easy scalability of the simple thermal CVD, the novel 3DGFs are highly promising for many applications such as high-strength and conducting composites, flexible conductors, electromagnetic shielding, energy storage, catalysis, and separation and purification. Furthermore, this strategy can be widely used to grow the vertical GSs on many other substrates by thermal CVD.
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Affiliation(s)
- Jie Zeng
- Shenzhen Engineering Lab for Supercapacitor Materials, Shenzhen Key Laboratory for Advanced Materials, Department of Material Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, University Town, Shenzhen, 518055, China
| | - Xixi Ji
- Shenzhen Engineering Lab for Supercapacitor Materials, Shenzhen Key Laboratory for Advanced Materials, Department of Material Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, University Town, Shenzhen, 518055, China
| | - Yihui Ma
- Shenzhen Engineering Lab for Supercapacitor Materials, Shenzhen Key Laboratory for Advanced Materials, Department of Material Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, University Town, Shenzhen, 518055, China
| | - Zhongxing Zhang
- Shenzhen Engineering Lab for Supercapacitor Materials, Shenzhen Key Laboratory for Advanced Materials, Department of Material Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, University Town, Shenzhen, 518055, China
| | - Shuguang Wang
- Shenzhen Engineering Lab for Supercapacitor Materials, Shenzhen Key Laboratory for Advanced Materials, Department of Material Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, University Town, Shenzhen, 518055, China
| | - Zhonghua Ren
- Shenzhen Engineering Lab for Supercapacitor Materials, Shenzhen Key Laboratory for Advanced Materials, Department of Material Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, University Town, Shenzhen, 518055, China
| | - Chunyi Zhi
- Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Jie Yu
- Shenzhen Engineering Lab for Supercapacitor Materials, Shenzhen Key Laboratory for Advanced Materials, Department of Material Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, University Town, Shenzhen, 518055, China
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65
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Zeng M, Xiao Y, Liu J, Yang K, Fu L. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control. Chem Rev 2018; 118:6236-6296. [DOI: 10.1021/acs.chemrev.7b00633] [Citation(s) in RCA: 298] [Impact Index Per Article: 49.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Affiliation(s)
- Mengqi Zeng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Yao Xiao
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, China
| | - Jinxin Liu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Kena Yang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, China
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66
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Han D, Yan Y, Wei J, Wang B, Li T, Guo G, Yang D, Xie S, Dong A. Fine-Tuning the Wall Thickness of Ordered Mesoporous Graphene by Exploiting Ligand Exchange of Colloidal Nanocrystals. Front Chem 2018; 5:117. [PMID: 29322042 PMCID: PMC5733481 DOI: 10.3389/fchem.2017.00117] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2017] [Accepted: 11/30/2017] [Indexed: 12/05/2022] Open
Abstract
Because of their unique physical properties, three-dimensional (3D) graphene has attracted enormous attention over the past years. However, it is still a challenge to precisely control the layer thickness of 3D graphene. Here, we report a novel strategy to rationally adjust the wall thickness of ordered mesoporous graphene (OMG). By taking advantage of ligand exchange capability of colloidal Fe3O4 nanocrystals, we are able to fine-tune the wall thickness of OMG from 2 to 6 layers of graphene. When evaluated as electrocatalyst for oxygen reduction reaction upon S and N doping, the 4-layer OMG is found to show better catalytic performance compared with their 2- and 6-layer counterparts, which we attribute to the enhanced exposure of active sites arising from the thin wall thickness and high surface area.
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Affiliation(s)
- Dandan Han
- Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Department of Chemistry, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai, China
| | - Yancui Yan
- Department of Macromolecular Science, Fudan University, Shanghai, China
| | - Jishi Wei
- Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Department of Chemistry, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai, China
| | - Biwei Wang
- Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Department of Chemistry, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai, China
| | - Tongtao Li
- Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Department of Chemistry, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai, China
| | - Guannan Guo
- Department of Macromolecular Science, Fudan University, Shanghai, China
| | - Dong Yang
- Department of Macromolecular Science, Fudan University, Shanghai, China
| | - Songhai Xie
- Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Department of Chemistry, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai, China
| | - Angang Dong
- Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Department of Chemistry, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai, China
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67
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Ji Y, Calderon B, Han Y, Cueva P, Jungwirth NR, Alsalman HA, Hwang J, Fuchs GD, Muller DA, Spencer MG. Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking. ACS NANO 2017; 11:12057-12066. [PMID: 29099576 DOI: 10.1021/acsnano.7b04841] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Two-dimensional hexagonal boron nitride (h-BN) is a wide bandgap material which has promising mechanical and optical properties. Here we report the realization of an initial nucleation density of h-BN <1 per mm2 using low-pressure chemical vapor deposition (CVD) on polycrystalline copper. This enabled wafer-scale CVD growth of single-crystal monolayer h-BN with a lateral size up to ∼300 μm, bilayer h-BN with a lateral size up to ∼60 μm, and trilayer h-BN with a lateral size up to ∼35 μm. Based on the large single-crystal monolayer h-BN domain, the sizes of the as-grown bi- and trilayer h-BN grains are 2 orders of magnitude larger than typical h-BN multilayer domains. In addition, we achieved coalesced h-BN films with an average grain size ∼100 μm. Various flake morphologies and their interlayer stacking configurations of bi- and trilayer h-BN domains were studied. Raman signatures of mono- and multilayer h-BN were investigated side by side in the same film. It was found that the Raman peak intensity can be used as a marker for the number of layers.
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Affiliation(s)
- Yanxin Ji
- School of Electrical and Computer Engineering, Cornell University , Ithaca, New York 14853, United States
| | - Brian Calderon
- School of Electrical and Computer Engineering, Cornell University , Ithaca, New York 14853, United States
| | - Yimo Han
- School of Applied and Engineering Physics, Cornell University , Ithaca, New York 14853, United States
| | - Paul Cueva
- School of Applied and Engineering Physics, Cornell University , Ithaca, New York 14853, United States
| | - Nicholas R Jungwirth
- School of Applied and Engineering Physics, Cornell University , Ithaca, New York 14853, United States
| | - Hussain A Alsalman
- School of Electrical and Computer Engineering, Cornell University , Ithaca, New York 14853, United States
- King Abdulaziz City for Science and Technology (KACST) , Riyadh, 6086-11442, Saudi Arabia
| | - Jeonghyun Hwang
- School of Electrical and Computer Engineering, Cornell University , Ithaca, New York 14853, United States
| | - Gregory D Fuchs
- School of Applied and Engineering Physics, Cornell University , Ithaca, New York 14853, United States
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University , Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Cornell University , Ithaca, New York 14853, United States
| | - Michael G Spencer
- School of Electrical and Computer Engineering, Cornell University , Ithaca, New York 14853, United States
- Morgan State University , Baltimore, Maryland 21215, United States
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68
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Shin H, Kim J, Lee H, Heinonen O, Benali A, Kwon Y. Nature of Interlayer Binding and Stacking of sp–sp2 Hybridized Carbon Layers: A Quantum Monte Carlo Study. J Chem Theory Comput 2017; 13:5639-5646. [DOI: 10.1021/acs.jctc.7b00747] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Hyeondeok Shin
- Leadership
Computing Facility, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Jeongnim Kim
- Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Hoonkyung Lee
- Department
of Physics, Konkuk University, Seoul 05029, Korea
| | - Olle Heinonen
- Material
Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Anouar Benali
- Leadership
Computing Facility, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Yongkyung Kwon
- Department
of Physics, Konkuk University, Seoul 05029, Korea
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69
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George G, Sisupal SB, Tomy T, Pottammal BA, Kumaran A, Suvekbala V, Gopimohan R, Sivaram S, Ragupathy L. Thermally conductive thin films derived from defect free graphene-natural rubber latex nanocomposite: Preparation and properties. CARBON 2017; 119:527-534. [PMID: 28775386 PMCID: PMC5465946 DOI: 10.1016/j.carbon.2017.04.068] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2017] [Revised: 03/29/2017] [Accepted: 04/25/2017] [Indexed: 06/07/2023]
Abstract
Commercially useful rubber products viz. gloves, condoms, tyres, and rubber hoses used in high temperature environments, etc., require efficient thermal conductivity, which increases the lifetime of these products. Graphene can fetch this property, if it is effectively incorporated into the rubber matrix. The great challenge in preparing graphene-rubber nanocomposites is formulating a scalable method to produce defect free graphene and its homogeneous dispersion into polymer matrices through an aqueous medium. Here, we used a simple method to produce defect free few layer (2-5) graphene, which can be easily dispersed into natural rubber (NR) latex without adversely affecting its colloidal stability. The resulting new composite showed large increase in thermal conductivity (480-980%) along with 40% increase in tensile properties and 60% improvement in electrical conductivity. This study provides a novel and generalized approach for the preparation of graphene based thermally conductive rubber nanocomposites.
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Affiliation(s)
- Gejo George
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariyam (P.O), Trivandrum, 695017, India
| | - Suja Bhargavan Sisupal
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariyam (P.O), Trivandrum, 695017, India
| | - Teenu Tomy
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariyam (P.O), Trivandrum, 695017, India
| | - Bincy Akkoli Pottammal
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariyam (P.O), Trivandrum, 695017, India
| | - Alaganandam Kumaran
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariyam (P.O), Trivandrum, 695017, India
| | - Vemparthan Suvekbala
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariyam (P.O), Trivandrum, 695017, India
| | - Rajmohan Gopimohan
- Corporate R&D Center, HLL Lifecare Limited, Akkulam, Sreekariyam (P.O), Trivandrum, 695017, India
| | - Swaminathan Sivaram
- Polymers and Advanced Materials Laboratory, National Chemical Laboratory, Dr. Homi Bhabha Road, Pune, 411008, India
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70
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Li Y, Wu B, Guo W, Wang L, Li J, Liu Y. Tailoring graphene layer-to-layer growth. NANOTECHNOLOGY 2017; 28:265101. [PMID: 28585519 DOI: 10.1088/1361-6528/aa730b] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A layered material grown between a substrate and the upper layer involves complex interactions and a confined reaction space, representing an unusual growth mode. Here, we show multi-layer graphene domains grown on liquid or solid Cu by the chemical vapor deposition method via this 'double-substrate' mode. We demonstrate the interlayer-induced coupling effect on the twist angle in bi- and multi-layer graphene. We discover dramatic growth disunity for different graphene layers, which is explained by the ideas of a chemical 'gate' and a material transport process within a confined space. These key results lead to a consistent framework for understanding the dynamic evolution of multi-layered graphene flakes and tailoring the layer-to-layer growth for practical applications.
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Affiliation(s)
- Yongtao Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, People's Republic of China. Faculty of Material and Energy Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
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71
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Abstract
AbstractDue to the unique properties of graphene, single layer, bilayer or even few layer graphene peeled off from bulk graphite cannot meet the need of practical applications. Large size graphene with quality comparable to mechanically exfoliated graphene has been synthesized by chemical vapor deposition (CVD). The main development and the key issues in controllable chemical vapor deposition of graphene has been briefly discussed in this chapter. Various strategies for graphene layer number and stacking control, large size single crystal graphene domains on copper, graphene direct growth on dielectric substrates, and doping of graphene have been demonstrated. The methods summarized here will provide guidance on how to synthesize other two-dimensional materials beyond graphene.
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72
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Fernández ACR, Castellani NJ. Noncovalent Interactions between Dopamine and Regular and Defective Graphene. Chemphyschem 2017; 18:2065-2080. [DOI: 10.1002/cphc.201700252] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/10/2017] [Revised: 05/10/2017] [Indexed: 11/11/2022]
Affiliation(s)
- Ana C. Rossi Fernández
- IFISUR, Universidad Nacional del Sur, CONICET; Departamento de Física; Av. L. N. Alem 1253 B8000CPB Bahía Blanca Argentina
| | - Norberto J. Castellani
- IFISUR, Universidad Nacional del Sur, CONICET; Departamento de Física; Av. L. N. Alem 1253 B8000CPB Bahía Blanca Argentina
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73
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Liang T, Luan C, Chen H, Xu M. Exploring oxygen in graphene chemical vapor deposition synthesis. NANOSCALE 2017; 9:3719-3735. [PMID: 28267184 DOI: 10.1039/c7nr00188f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Graphene's practical applications require its reproducible production with controlled means. In particular, graphene synthesis by chemical vapor deposition on metals has been shown to be a promising way to produce large-size and high-quality graphene film at low cost. Understanding the reaction mechanisms during the synthesis process is vital for process and product controllability. There have been a great deal of studies regarding the mutual interplays between the metal, graphene, and hydrogen in graphene production, leading to significant advances in controllable graphene synthesis. Recently, oxygen has been found to play a key role in each step of graphene synthesis, especially on Cu. Taking oxygen into consideration, one can explain the divergent experimental results under similar conditions reported before and can grasp it as another powerful tool that can help to regulate the synthesis processes. The primary discoveries of the function of oxygen in graphene synthesis are summarized and discussed herein, divided into four aspects, corresponding to the elementary steps in graphene synthesis. Oxygen may also further promote graphene synthesis toward the final goal of developing wafer-scale single crystals with definite layer numbers and defects.
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Affiliation(s)
- Tao Liang
- College of Information Science & Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China. and Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Chunyan Luan
- College of Information Science & Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Hongzheng Chen
- Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Mingsheng Xu
- College of Information Science & Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China.
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74
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Tan C, Cao X, Wu XJ, He Q, Yang J, Zhang X, Chen J, Zhao W, Han S, Nam GH, Sindoro M, Zhang H. Recent Advances in Ultrathin Two-Dimensional Nanomaterials. Chem Rev 2017; 117:6225-6331. [PMID: 28306244 DOI: 10.1021/acs.chemrev.6b00558] [Citation(s) in RCA: 1987] [Impact Index Per Article: 283.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocatalysis, batteries, supercapacitors, solar cells, photocatalysis, and sensing platforms. Finally, the challenges and outlooks in this promising field are featured on the basis of its current development.
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Affiliation(s)
- Chaoliang Tan
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiehong Cao
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore.,College of Materials Science and Engineering, Zhejiang University of Technology , 18 Chaowang Road, Hangzhou 310014, China
| | - Xue-Jun Wu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Qiyuan He
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jian Yang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiao Zhang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Junze Chen
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Wei Zhao
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Shikui Han
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Gwang-Hyeon Nam
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Melinda Sindoro
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Hua Zhang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
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75
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Choi JH, Cui P, Chen W, Cho JH, Zhang Z. Atomistic mechanisms of van der Waals epitaxy and property optimization of layered materials. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2017. [DOI: 10.1002/wcms.1300] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Affiliation(s)
- Jin-Ho Choi
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei China
- Research Institute of Mechanical Technology; Pusan National University; Pusan Korea
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei China
| | - Wei Chen
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei China
- Department of Physics and School of Engineering and Applied Sciences; Harvard University; Cambridge MA USA
| | - Jun-Hyung Cho
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei China
- Department of Physics and Research Institute for Natural Sciences; Hanyang University; Seoul Korea
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei China
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76
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Li F, Wei W, Lv X, Huang B, Dai Y. Evolution of the linear band dispersion of monolayer and bilayer germanene on Cu(111). Phys Chem Chem Phys 2017; 19:22844-22851. [DOI: 10.1039/c7cp03597g] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The bottom germanene layer plays a role as a buffer layer preserving the electronic properties of the upper germanene layer.
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Affiliation(s)
- Fengping Li
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Wei Wei
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Xingshuai Lv
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Baibiao Huang
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Ying Dai
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
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77
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Bottari G, Herranz MÁ, Wibmer L, Volland M, Rodríguez-Pérez L, Guldi DM, Hirsch A, Martín N, D'Souza F, Torres T. Chemical functionalization and characterization of graphene-based materials. Chem Soc Rev 2017; 46:4464-4500. [DOI: 10.1039/c7cs00229g] [Citation(s) in RCA: 308] [Impact Index Per Article: 44.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
This review offers an overview on the chemical functionalization, characterization and applications of graphene-based materials.
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Affiliation(s)
- Giovanni Bottari
- Department of Organic Chemistry
- Universidad Autónoma de Madrid
- 28049 Madrid
- Spain
- Institute for Advanced Research in Chemical Sciences
| | - Ma Ángeles Herranz
- Departamento de Química Orgánica I
- Facultad de Ciencias Químicas
- Universidad Complutense de Madrid
- 28040 Madrid
- Spain
| | - Leonie Wibmer
- Department of Chemistry and Pharmacy
- Interdisciplinary Center for Molecular Materials (ICMM)
- Friedrich-Alexander-Universität Erlangen-Nürnberg
- 91058 Erlangen
- Germany
| | - Michel Volland
- Department of Chemistry and Pharmacy
- Interdisciplinary Center for Molecular Materials (ICMM)
- Friedrich-Alexander-Universität Erlangen-Nürnberg
- 91058 Erlangen
- Germany
| | - Laura Rodríguez-Pérez
- Departamento de Química Orgánica I
- Facultad de Ciencias Químicas
- Universidad Complutense de Madrid
- 28040 Madrid
- Spain
| | - Dirk M. Guldi
- Department of Chemistry and Pharmacy
- Interdisciplinary Center for Molecular Materials (ICMM)
- Friedrich-Alexander-Universität Erlangen-Nürnberg
- 91058 Erlangen
- Germany
| | - Andreas Hirsch
- Department of Chemistry and Pharmacy
- University Erlangen-Nürnberg
- 91054 Erlangen
- Germany
| | - Nazario Martín
- IMDEA-Nanociencia
- Campus de Cantoblanco
- 28049 Madrid
- Spain
- Departamento de Química Orgánica I
| | | | - Tomás Torres
- Department of Organic Chemistry
- Universidad Autónoma de Madrid
- 28049 Madrid
- Spain
- Institute for Advanced Research in Chemical Sciences
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78
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Song Y, Zhuang J, Song M, Yin S, Cheng Y, Zhang X, Wang M, Xiang R, Xia Y, Maruyama S, Zhao P, Ding F, Wang H. Epitaxial nucleation of CVD bilayer graphene on copper. NANOSCALE 2016; 8:20001-20007. [PMID: 27858033 DOI: 10.1039/c6nr04557j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Bilayer graphene (BLG) has emerged as a promising candidate for next-generation electronic applications, especially when it exists in the Bernal-stacked form, but its large-scale production remains a challenge. Here we present an experimental and first-principles calculation study of the epitaxial chemical vapor deposition (CVD) nucleation process for Bernal-stacked BLG growth on Cu using ethanol as a precursor. Results show that a carefully adjusted flow rate of ethanol can yield a uniform BLG film with a surface coverage of nearly 90% and a Bernal-stacking ratio of nearly 100% on ordinary flat Cu substrates, and its epitaxial nucleation of the second layer is mainly due to the active CH3 radicals with the presence of a monolayer-graphene-covered Cu surface. We believe that this nucleation mechanism will help clarify the formation of BLG by the epitaxial CVD process, and lead to many new strategies for scalable synthesis of graphene with more controllable structures and numbers of layers.
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Affiliation(s)
- Yenan Song
- Institute of Applied Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310012, P. R. China.
| | - Jianing Zhuang
- Institute of Textiles and Clothing, Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
| | - Meng Song
- Department of Physics, Zhejiang University, Hangzhou 310012, P. R. China
| | - Shaoqian Yin
- Institute of Applied Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310012, P. R. China.
| | - Yu Cheng
- Institute of Applied Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310012, P. R. China.
| | - Xuewei Zhang
- Institute of Applied Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310012, P. R. China.
| | - Miao Wang
- Department of Physics, Zhejiang University, Hangzhou 310012, P. R. China
| | - Rong Xiang
- Department of Mechanical Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Yang Xia
- Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, P. R. China
| | - Shigeo Maruyama
- Department of Mechanical Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Pei Zhao
- Institute of Applied Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310012, P. R. China.
| | - Feng Ding
- Institute of Textiles and Clothing, Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
| | - Hongtao Wang
- Institute of Applied Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310012, P. R. China.
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79
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Wang ZJ, Dong J, Cui Y, Eres G, Timpe O, Fu Q, Ding F, Schloegl R, Willinger MG. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging. Nat Commun 2016; 7:13256. [PMID: 27759024 PMCID: PMC5075831 DOI: 10.1038/ncomms13256] [Citation(s) in RCA: 42] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2016] [Accepted: 09/13/2016] [Indexed: 11/11/2022] Open
Abstract
In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene-graphene and graphene-substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.
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Affiliation(s)
- Zhu-Jun Wang
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem D-14195, Germany
| | - Jichen Dong
- Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Yi Cui
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Gyula Eres
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Olaf Timpe
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem D-14195, Germany
| | - Qiang Fu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Feng Ding
- Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hong Kong 999077, China
| | - R. Schloegl
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem D-14195, Germany
| | - Marc-Georg Willinger
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem D-14195, Germany
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80
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Ta HQ, Perello DJ, Duong DL, Han GH, Gorantla S, Nguyen VL, Bachmatiuk A, Rotkin SV, Lee YH, Rümmeli MH. Stranski-Krastanov and Volmer-Weber CVD Growth Regimes To Control the Stacking Order in Bilayer Graphene. NANO LETTERS 2016; 16:6403-6410. [PMID: 27683947 DOI: 10.1021/acs.nanolett.6b02826] [Citation(s) in RCA: 37] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Aside from unusual properties of monolayer graphene, bilayer has been shown to have even more interesting physics, in particular allowing bandgap opening with dual gating for proper interlayer symmetry. Such properties, promising for device applications, ignited significant interest in understanding and controlling the growth of bilayer graphene. Here we systematically investigate a broad set of flow rates and relative gas ratio of CH4 to H2 in atmospheric pressure chemical vapor deposition of multilayered graphene. Two very different growth windows are identified. For relatively high CH4 to H2 ratios, graphene growth is relatively rapid with an initial first full layer forming in seconds upon which new graphene flakes nucleate then grow on top of the first layer. The stacking of these flakes versus the initial graphene layer is mostly turbostratic. This growth mode can be likened to Stranski-Krastanov growth. With relatively low CH4 to H2 ratios, growth rates are reduced due to a lower carbon supply rate. In addition bi-, tri-, and few-layer flakes form directly over the Cu substrate as individual islands. Etching studies show that in this growth mode subsequent layers form beneath the first layer presumably through carbon radical intercalation. This growth mode is similar to that found with Volmer-Weber growth and was shown to produce highly oriented AB-stacked materials. These systematic studies provide new insight into bilayer graphene formation and define the synthetic range where gapped bilayer graphene can be reliably produced.
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Affiliation(s)
- Huy Q Ta
- College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University , Suzhou 215006, China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , M. Curie-Sklodowskiej 34, Zabrze 41-819, Poland
- Department of Energy Science, Department of Physics, Sungkyunkwan University , Suwon 16419, Republic of Korea
| | - David J Perello
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 16419, Republic of Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 16419, Republic of Korea
| | - Gang Hee Han
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 16419, Republic of Korea
| | - Sandeep Gorantla
- Department of Physics, University of Oslo , Blindern, P.O. Box 1048, 0316 Oslo, Norway
| | - Van Luan Nguyen
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 16419, Republic of Korea
| | - Alicja Bachmatiuk
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , M. Curie-Sklodowskiej 34, Zabrze 41-819, Poland
- IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany
| | - Slava V Rotkin
- Department of Physics and Center for Advanced Materials and Nanotechnology, Lehigh University , Bethlehem, Pennsylvania 18015, United States
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 16419, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University , Suwon 16419, Republic of Korea
| | - Mark H Rümmeli
- College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University , Suzhou 215006, China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences , M. Curie-Sklodowskiej 34, Zabrze 41-819, Poland
- IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany
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81
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Nguyen VL, Perello DJ, Lee S, Nai CT, Shin BG, Kim JG, Park HY, Jeong HY, Zhao J, Vu QA, Lee SH, Loh KP, Jeong SY, Lee YH. Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:8177-8183. [PMID: 27414480 DOI: 10.1002/adma.201601760] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2016] [Revised: 06/19/2016] [Indexed: 06/06/2023]
Abstract
Single-crystalline artificial AB-stacked bilayer graphene is formed by aligned transfer of two single-crystalline monolayers on a wafer-scale. The obtained bilayer has a well-defined interface and is electronically equivalent to exfoliated or direct-grown AB-stacked bilayers.
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Affiliation(s)
- Van Luan Nguyen
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - David J Perello
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Seunghun Lee
- Department of Cogno-mechatronics Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Chang Tai Nai
- Department of Chemistry and Centre for Advanced 2D Materials (CA2DM), National University of Singapore, 3 Science Drive 3, Singapore, 117543
| | - Bong Gyu Shin
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Joong-Gyu Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Ho Yeol Park
- Department of Cogno-mechatronics Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798, Republic of Korea
| | - Jiong Zhao
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Quoc An Vu
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Sang Hyub Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Kian Ping Loh
- Department of Chemistry and Centre for Advanced 2D Materials (CA2DM), National University of Singapore, 3 Science Drive 3, Singapore, 117543
| | - Se-Young Jeong
- Department of Cogno-mechatronics Engineering, Pusan National University, Busan, 46241, Republic of Korea.
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea.
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
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82
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Park J, An H, Choi DC, Hussain S, Song W, An KS, Lee WJ, Lee N, Lee WG, Jung J. Selective growth of graphene in layer-by-layer via chemical vapor deposition. NANOSCALE 2016; 8:14633-14642. [PMID: 27436358 DOI: 10.1039/c6nr04306b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (∼40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices.
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Affiliation(s)
- Jaehyun Park
- Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
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83
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Hao Y, Wang L, Liu Y, Chen H, Wang X, Tan C, Nie S, Suk JW, Jiang T, Liang T, Xiao J, Ye W, Dean CR, Yakobson BI, McCarty KF, Kim P, Hone J, Colombo L, Ruoff RS. Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene. NATURE NANOTECHNOLOGY 2016; 11:426-31. [PMID: 26828845 DOI: 10.1038/nnano.2015.322] [Citation(s) in RCA: 119] [Impact Index Per Article: 14.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2015] [Accepted: 12/09/2015] [Indexed: 05/17/2023]
Abstract
Bernal (AB)-stacked bilayer graphene (BLG) is a semiconductor whose bandgap can be tuned by a transverse electric field, making it a unique material for a number of electronic and photonic devices. A scalable approach to synthesize high-quality BLG is therefore critical, which requires minimal crystalline defects in both graphene layers and maximal area of Bernal stacking, which is necessary for bandgap tunability. Here we demonstrate that in an oxygen-activated chemical vapour deposition (CVD) process, half-millimetre size, Bernal-stacked BLG single crystals can be synthesized on Cu. Besides the traditional 'surface-limited' growth mechanism for SLG (1st layer), we discovered new microscopic steps governing the growth of the 2nd graphene layer below the 1st layer as the diffusion of carbon atoms through the Cu bulk after complete dehydrogenation of hydrocarbon molecules on the Cu surface, which does not occur in the absence of oxygen. Moreover, we found that the efficient diffusion of the carbon atoms present at the interface between Cu and the 1st graphene layer further facilitates growth of large domains of the 2nd layer. The CVD BLG has superior electrical quality, with a device on/off ratio greater than 10(4), and a tunable bandgap up to ∼100 meV at a displacement field of 0.9 V nm(-1).
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Affiliation(s)
- Yufeng Hao
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | - Lei Wang
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | - Yuanyue Liu
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA
- National Renewable Energy Laboratory, Golden, Colorado 80401, USA
| | - Hua Chen
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Xiaohan Wang
- Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Cheng Tan
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | - Shu Nie
- Sandia National Laboratories, Livermore, California 94550, USA
| | - Ji Won Suk
- School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Korea
| | - Tengfei Jiang
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, USA
| | - Tengfei Liang
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China
| | - Junfeng Xiao
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | - Wenjing Ye
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China
| | - Cory R Dean
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA
| | - Kevin F McCarty
- Sandia National Laboratories, Livermore, California 94550, USA
| | - Philip Kim
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | | | - Rodney S Ruoff
- Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, USA
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology, Ulsan 689-798, Korea
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84
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Yang C, Wu T, Wang H, Zhang G, Sun J, Lu G, Niu T, Li A, Xie X, Jiang M. Copper-Vapor-Assisted Rapid Synthesis of Large AB-Stacked Bilayer Graphene Domains on Cu-Ni Alloy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:2009-2013. [PMID: 26915342 DOI: 10.1002/smll.201503658] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2015] [Revised: 02/01/2016] [Indexed: 06/05/2023]
Abstract
The synergic effects of Cu85Ni15 and the copper vapor evaporated from copper foil enabled the fast growth of a ≈300 μm bilayer graphene in ≈10 minutes. The copper vapor reduces the growth rate of the first graphene layer while the carbon dissolved in the alloy boosts the growth of the subsequently developed second graphene layer with an AB-stacking order.
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Affiliation(s)
- Chao Yang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- School of Electronic, Electric and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Guanhua Zhang
- Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
| | - Julong Sun
- Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
| | - Guangyuan Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- School of Electronic, Electric and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Tianchao Niu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ang Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 200031, P. R. China
| | - Mianheng Jiang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 200031, P. R. China
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85
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Zhang Z, Liu X, Yu J, Hang Y, Li Y, Guo Y, Xu Y, Sun X, Zhou J, Guo W. Tunable electronic and magnetic properties of two-dimensional materials and their one-dimensional derivatives. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2016; 6:324-350. [PMID: 27818710 PMCID: PMC5069645 DOI: 10.1002/wcms.1251] [Citation(s) in RCA: 50] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/29/2015] [Revised: 01/07/2016] [Accepted: 01/08/2016] [Indexed: 11/16/2022]
Abstract
Low‐dimensional materials exhibit many exceptional properties and functionalities which can be efficiently tuned by externally applied force or fields. Here we review the current status of research on tuning the electronic and magnetic properties of low‐dimensional carbon, boron nitride, metal‐dichalcogenides, phosphorene nanomaterials by applied engineering strain, external electric field and interaction with substrates, etc, with particular focus on the progress of computational methods and studies. We highlight the similarities and differences of the property modulation among one‐ and two‐dimensional nanomaterials. Recent breakthroughs in experimental demonstration of the tunable functionalities in typical nanostructures are also presented. Finally, prospective and challenges for applying the tunable properties into functional devices are discussed. WIREs Comput Mol Sci 2016, 6:324–350. doi: 10.1002/wcms.1251 For further resources related to this article, please visit the WIREs website. Conflict of interest: The authors have declared no conflicts of interest for this article.
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Affiliation(s)
- Zhuhua Zhang
- State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE) Nanjing University of Aeronautics and Astronautics Nanjing China
| | - Xiaofei Liu
- State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE) Nanjing University of Aeronautics and Astronautics Nanjing China
| | - Jin Yu
- State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE) Nanjing University of Aeronautics and Astronautics Nanjing China
| | - Yang Hang
- State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE) Nanjing University of Aeronautics and Astronautics Nanjing China
| | - Yao Li
- State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE) Nanjing University of Aeronautics and Astronautics Nanjing China
| | - Yufeng Guo
- State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE) Nanjing University of Aeronautics and Astronautics Nanjing China
| | - Ying Xu
- State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE) Nanjing University of Aeronautics and Astronautics Nanjing China
| | - Xu Sun
- State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE) Nanjing University of Aeronautics and Astronautics Nanjing China
| | - Jianxin Zhou
- State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE) Nanjing University of Aeronautics and Astronautics Nanjing China
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE) Nanjing University of Aeronautics and Astronautics Nanjing China
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86
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Bian X, Wang Q, Wang X, Wang L, Li WQ, Chen GH, Zhu H. Graphene layers on bimetallic Ni/Cu(111) surface and near surface alloys in controlled growth of graphene. RSC Adv 2016. [DOI: 10.1039/c6ra14315f] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Bimetallic alloy is more effective than pure metal for controlled growth of high-quality graphene.
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Affiliation(s)
- Xin Bian
- Department of Applied Chemistry
- College of Chemistry and Molecular Engineering
- Nanjing Tech University
- Nanjing 211816
- P. R. China
| | - Qiang Wang
- Department of Applied Chemistry
- College of Chemistry and Molecular Engineering
- Nanjing Tech University
- Nanjing 211816
- P. R. China
| | - Xinyan Wang
- Department of Applied Chemistry
- College of Chemistry and Molecular Engineering
- Nanjing Tech University
- Nanjing 211816
- P. R. China
| | - Lu Wang
- Department of Applied Chemistry
- College of Chemistry and Molecular Engineering
- Nanjing Tech University
- Nanjing 211816
- P. R. China
| | - Wei-qi Li
- Department of Physics
- Harbin Institute of Technology
- Harbin 150001
- P. R. China
| | - Guang-hui Chen
- Department of Chemistry
- Shantou University
- Shantou
- P. R. China
| | - Hongjun Zhu
- Department of Applied Chemistry
- College of Chemistry and Molecular Engineering
- Nanjing Tech University
- Nanjing 211816
- P. R. China
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87
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Fang W, Hsu AL, Song Y, Kong J. A review of large-area bilayer graphene synthesis by chemical vapor deposition. NANOSCALE 2015; 7:20335-20351. [PMID: 26604157 DOI: 10.1039/c5nr04756k] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Bilayer graphene has attracted considerable attention due to its potential as a tunable band gap in AB-stacked bilayers. Recently, great advancements have been made in the synthesis of chemical-vapor-deposited bilayer graphene. This featured article provides a detailed and up-to-date review of the synthesis of bilayer graphene by chemical vapor deposition (CVD). We will discuss various approaches to synthesize bilayer graphene and the corresponding growth dynamics. Methods for identifying the growth mechanism of bilayer graphene on Cu enclosures are highlighted for a deeper understanding of better control over uniformity and thickness.
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Affiliation(s)
- Wenjing Fang
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
| | - Allen L Hsu
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. and Stanford Research Institute International, 333 Ravenswood Avenue, Menlo Park, CA 94025, USA
| | - Yi Song
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
| | - Jing Kong
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
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88
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Man B, Xu S, Jiang S, Liu A, Gao S, Zhang C, Qiu H, Li Z. Graphene-Based Flexible and Transparent Tunable Capacitors. NANOSCALE RESEARCH LETTERS 2015; 10:974. [PMID: 26138450 PMCID: PMC4489973 DOI: 10.1186/s11671-015-0974-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/15/2015] [Accepted: 06/12/2015] [Indexed: 06/04/2023]
Abstract
We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.
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Affiliation(s)
- Baoyuan Man
- College of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China,
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89
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Liu JB, Li PJ, Chen YF, Wang ZG, Qi F, He JR, Zheng BJ, Zhou JH, Zhang WL, Gu L, Li YR. Observation of tunable electrical bandgap in large-area twisted bilayer graphene synthesized by chemical vapor deposition. Sci Rep 2015; 5:15285. [PMID: 26472497 PMCID: PMC4607884 DOI: 10.1038/srep15285] [Citation(s) in RCA: 34] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2014] [Accepted: 09/22/2015] [Indexed: 11/09/2022] Open
Abstract
Although there are already many efforts to investigate the electronic structures of twisted bilayer graphene, a definitive conclusion has not yet been reached. In particular, it is still a controversial issue whether a tunable electrical (or transport) bandgap exists in twisted bilayer graphene film until now. Herein, for the first time, it has been demonstrated that a tunable electrical bandgap can be opened in the twisted bilayer graphene by the combination effect of twist and vertical electrical fields. In addition, we have also developed a facile chemical vapor deposition method to synthesize large-area twisted bilayer graphene by introducing decaborane as the cocatalyst for decomposing methane molecules. The growth mechanism is demonstrated to be a defined-seeding and self-limiting process. This work is expected to be beneficial to the fundamental understanding of both the growth mechanism for bilayer graphene on Cu foil and more significantly, the electronic structures of twisted bilayer graphene.
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Affiliation(s)
- Jing-Bo Liu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China
| | - Ping-Jian Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China
| | - Yuan-Fu Chen
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China
| | - Ze-Gao Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China
| | - Fei Qi
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China
| | - Jia-Rui He
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China
| | - Bin-Jie Zheng
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China
| | - Jin-Hao Zhou
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China
| | - Wan-Li Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Yan-Rong Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China
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90
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Chen L, Liu B, Ge M, Ma Y, Abbas AN, Zhou C. Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode. ACS NANO 2015; 9:8368-8375. [PMID: 26221865 DOI: 10.1021/acsnano.5b03043] [Citation(s) in RCA: 79] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Two-dimensional (2D) materials beyond graphene have drawn a lot of attention recently. Among the large family of 2D materials, transitional metal dichalcogenides (TMDCs), for example, molybdenum disulfides (MoS2) and tungsten diselenides (WSe2), have been demonstrated to be good candidates for advanced electronics, optoelectronics, and other applications. Growth of large single-crystalline domains and continuous films of monolayer TMDCs has been achieved recently. Usually, these TMDC flakes nucleate randomly on substrates, and their orientation cannot be controlled. Nucleation control and orientation control are important steps in 2D material growth, because randomly nucleated and orientated flakes will form grain boundaries when adjacent flakes merge together, and the formation of grain boundaries may degrade mechanical and electrical properties of as-grown materials. The use of single crystalline substrates enables the alignment of as-grown TMDC flakes via a substrate-flake epitaxial interaction, as demonstrated recently. Here we report a step-edge-guided nucleation and growth approach for the aligned growth of 2D WSe2 by a chemical vapor deposition method using C-plane sapphire as substrates. We found that at temperatures above 950 °C the growth is strongly guided by the atomic steps on the sapphire surface, which leads to the aligned growth of WSe2 along the step edges on the sapphire substrate. In addition, such atomic steps facilitate a layer-over-layer overlapping process to form few-layer WSe2 structures, which is different from the classical layer-by-layer mode for thin-film growth. This work introduces an efficient way to achieve oriented growth of 2D WSe2 and adds fresh knowledge on the growth mechanism of WSe2 and potentially other 2D materials.
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Affiliation(s)
- Liang Chen
- Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Bilu Liu
- Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Mingyuan Ge
- Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Yuqiang Ma
- Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Ahmad N Abbas
- Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Chongwu Zhou
- Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
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91
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Kasap S, Khaksaran H, Çelik S, Özkaya H, Yanık C, Kaya II. Controlled growth of large area multilayer graphene on copper by chemical vapour deposition. Phys Chem Chem Phys 2015; 17:23081-7. [PMID: 26273953 DOI: 10.1039/c5cp01436k] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
The growth of nearly full coverage of multilayer graphene on the surface of a 99.8% purity copper foil has been experimentally studied. It has been shown that the film thickness can be controlled by a single parameter, the growth time, and growth can be extended until nearly full coverage of more than one layer graphene over the copper surface. The results are supported by scanning electron microscopy and Raman analysis together with optical transmittance and sheet resistance measurements. It has been verified that silicon oxide impurity particles within the copper act as catalysts and the seeds of multilayer graphene islands. The linear increase of the average thickness of graphene to the growth time has been attributed to the interplay between the mean distance between the impurities on the surface and the molecular mean free path in the process gas. A qualitative model is proposed to explain the microscopic mechanism of the multilayer growth on copper. These results contribute to the understanding of the chemical vapour deposition growth kinetics towards the objective of large area high quality graphene production with tuneable layer thickness.
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Affiliation(s)
- Sibel Kasap
- Nanotechnology Research and Application Center, Sabanci University, 34956 Istanbul, Turkey
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92
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Subhedar KM, Sharma I, Dhakate SR. Control of layer stacking in CVD graphene under quasi-static condition. Phys Chem Chem Phys 2015; 17:22304-10. [PMID: 26245487 DOI: 10.1039/c5cp03541d] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The type of layer stacking in bilayer graphene has a significant influence on its electronic properties because of the contrast nature of layer coupling. Herein, different geometries of the reaction site for the growth of bilayer graphene by the chemical vapor deposition (CVD) technique and their effects on the nature of layer stacking are investigated. Micro-Raman mapping and curve fitting analysis confirmed the type of layer stacking for the CVD grown bilayer graphene. The samples grown with sandwiched structure such as quartz/Cu foil/quartz along with a spacer, between the two quartz plates to create a sealed space, resulted in Bernal or AB stacked bilayer graphene while the sample sandwiched without a spacer produced the twisted bilayer graphene. The contrast difference in the layer stacking is a consequence of the difference in the growth mechanism associated with different geometries of the reaction site. The diffusion dominated process under quasi-static control is responsible for the growth of twisted bilayer graphene in sandwiched geometry while surface controlled growth with ample and continual supply of carbon in sandwiched geometry along with a spacer, leads to AB stacked bilayer graphene. Through this new approach, an efficient technique is presented to control the nature of layer stacking.
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Affiliation(s)
- Kiran M Subhedar
- Physics and Engineering of Carbon, Division of Materials Physics and Engineering and Academy of Scientific and Innovative Research (AcSIR)-NPL, CSIR-National Physical Laboratory (NPL), New Delhi-12, India.
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93
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Yu J, Li J, Zhang W, Chang H. Synthesis of high quality two-dimensional materials via chemical vapor deposition. Chem Sci 2015; 6:6705-6716. [PMID: 29861920 PMCID: PMC5950838 DOI: 10.1039/c5sc01941a] [Citation(s) in RCA: 91] [Impact Index Per Article: 10.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/30/2015] [Accepted: 08/03/2015] [Indexed: 12/22/2022] Open
Abstract
The synthesis of high quality two-dimensional materials such as graphene, BN, and transition metal dichalcogenides by CVD provides a new opportunity for large scale applications.
Two-dimensional (2D) materials have attracted much attention due to their unique properties and great potential in various applications. Controllable synthesis of 2D materials with high quality and high efficiency is essential for their large scale applications. Chemical vapor deposition (CVD) has been one of the most important and reliable techniques for the synthesis of 2D materials. In this perspective, the recent advances in the CVD growth of three typical types of two-dimensional materials, graphene, boron nitride and transition metal dichalcogenides (TMDs), are briefly introduced. Large area preparation, single crystal growth and some mechanistic insight are discussed with details. Finally we give a brief comment on the challenges of CVD growth of 2D materials.
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Affiliation(s)
- Jingxue Yu
- Center for Joining and Electronic Packaging , State Key Laboratory of Material Processing and Die & Mould Technology , School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan 430074 , China .
| | - Jie Li
- Center for Joining and Electronic Packaging , State Key Laboratory of Material Processing and Die & Mould Technology , School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan 430074 , China .
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging , State Key Laboratory of Material Processing and Die & Mould Technology , School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan 430074 , China .
| | - Haixin Chang
- Center for Joining and Electronic Packaging , State Key Laboratory of Material Processing and Die & Mould Technology , School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan 430074 , China .
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94
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Medina H, Huang CC, Lin HC, Huang YH, Chen YZ, Yen WC, Chueh YL. Ultrafast Graphene Growth on Insulators via Metal-Catalyzed Crystallization by a Laser Irradiation Process: From Laser Selection, Thickness Control to Direct Patterned Graphene Utilizing Controlled Layer Segregation Process. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2015; 11:3017-3027. [PMID: 25808659 DOI: 10.1002/smll.201403463] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2014] [Revised: 01/11/2015] [Indexed: 06/04/2023]
Abstract
Despite the vast progress in chemical vapor deposition (CVD) graphene grown on metals, the transfer process is still a major bottleneck, being not devoid of wrinkles and polymer residues. In this paper, a structure is introduced to directly synthesize few layer graphene on insulating substrates by a laser irradiation heating process. The segregation of graphene layers can be manipulated by tuning the metal layer thickness and laser power at different scanning rates. Graphene deposition and submicrometer patterning resolution can be achieved by patterning the intermediate metal layer using standard lithography methods in order to overcome the scalability issue regardless the resolution of the laser beam. The systematic analysis of the process based on the formation of carbon microchannels by the laser irradiation process can be extended to several materials, thicknesses, and methods. Furthermore, hole and electron mobilities of 500 and 950 cm(2) V(-1) s(-1) are measured. The laser-synthesized graphene is a step forward along the direct synthesis route for graphene on insulators that meets the criteria for photonics and electronics.
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Affiliation(s)
- Henry Medina
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, ROC
| | - Chih-Chi Huang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, ROC
| | - Hung-Chiao Lin
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, ROC
| | - Yu-Hsian Huang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, ROC
| | - Yu-Ze Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, ROC
| | - Wen-Chun Yen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, ROC
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, ROC
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95
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Wu Q, Jung SJ, Jang SK, Lee J, Jeon I, Suh H, Kim YH, Lee YH, Lee S, Song YJ. Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition. NANOSCALE 2015; 7:10357-10361. [PMID: 26006180 DOI: 10.1039/c5nr02716k] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.
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Affiliation(s)
- Qinke Wu
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea
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96
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Li Z, Kinloch IA, Young RJ, Novoselov KS, Anagnostopoulos G, Parthenios J, Galiotis C, Papagelis K, Lu CY, Britnell L. Deformation of wrinkled graphene. ACS NANO 2015; 9:3917-25. [PMID: 25765609 PMCID: PMC4424820 DOI: 10.1021/nn507202c] [Citation(s) in RCA: 49] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2014] [Accepted: 03/12/2015] [Indexed: 05/21/2023]
Abstract
The deformation of monolayer graphene, produced by chemical vapor deposition (CVD), on a polyester film substrate has been investigated through the use of Raman spectroscopy. It has been found that the microstructure of the CVD graphene consists of a hexagonal array of islands of flat monolayer graphene separated by wrinkled material. During deformation, it was found that the rate of shift of the Raman 2D band wavenumber per unit strain was less than 25% of that of flat flakes of mechanically exfoliated graphene, whereas the rate of band broadening per unit strain was about 75% of that of the exfoliated material. This unusual deformation behavior has been modeled in terms of mechanically isolated graphene islands separated by the graphene wrinkles, with the strain distribution in each graphene island determined using shear lag analysis. The effect of the size and position of the Raman laser beam spot has also been incorporated in the model. The predictions fit well with the behavior observed experimentally for the Raman band shifts and broadening of the wrinkled CVD graphene. The effect of wrinkles upon the efficiency of graphene to reinforce nanocomposites is also discussed.
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Affiliation(s)
- Zheling Li
- School of Materials, School of Physics and Astronomy, and BGT Materials Ltd., Photon Science Institute, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
| | - Ian A. Kinloch
- School of Materials, School of Physics and Astronomy, and BGT Materials Ltd., Photon Science Institute, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
| | - Robert J. Young
- School of Materials, School of Physics and Astronomy, and BGT Materials Ltd., Photon Science Institute, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
- Address correspondence to
| | - Kostya S. Novoselov
- School of Materials, School of Physics and Astronomy, and BGT Materials Ltd., Photon Science Institute, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
| | - George Anagnostopoulos
- Institute of Chemical Engineering Sciences, Foundation for Research and Technology − Hellas (FORTH/ICE-HT), P.O. Box 1414, Patras 26504, Greece
| | - John Parthenios
- Institute of Chemical Engineering Sciences, Foundation for Research and Technology − Hellas (FORTH/ICE-HT), P.O. Box 1414, Patras 26504, Greece
| | - Costas Galiotis
- Institute of Chemical Engineering Sciences, Foundation for Research and Technology − Hellas (FORTH/ICE-HT), P.O. Box 1414, Patras 26504, Greece
- Department of Chemical Engineering and Department of Materials Science, University of Patras, Patras 26504, Greece
| | - Konstantinos Papagelis
- Institute of Chemical Engineering Sciences, Foundation for Research and Technology − Hellas (FORTH/ICE-HT), P.O. Box 1414, Patras 26504, Greece
- Department of Chemical Engineering and Department of Materials Science, University of Patras, Patras 26504, Greece
| | - Ching-Yu Lu
- School of Materials, School of Physics and Astronomy, and BGT Materials Ltd., Photon Science Institute, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
| | - Liam Britnell
- School of Materials, School of Physics and Astronomy, and BGT Materials Ltd., Photon Science Institute, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
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97
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Dark-field Transmission Electron Microscopy Imaging Technique to Visualize the Local Structure of Two-dimensional Material; Graphene. Appl Microsc 2015. [DOI: 10.9729/am.2015.45.1.23] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
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98
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Zhao Z, Shan Z, Zhang C, Li Q, Tian B, Huang Z, Lin W, Chen X, Ji H, Zhang W, Cai W. Study on the diffusion mechanism of graphene grown on copper pockets. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2015; 11:1418-22. [PMID: 25469458 DOI: 10.1002/smll.201402483] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2014] [Revised: 10/14/2014] [Indexed: 05/23/2023]
Abstract
A correlation between graphene domains grown on the outer and the inner surfaces of Cu pockets is found, which discloses a new graphene growth mechanism based on the fast diffusion of carbon atoms through the 25 micro-meter-thick Cu foil, confirmed by isotopic labeling. Subsequently, on the outer surface of the Cu pocket, bilayer graphene with a coverage of about 78% is grown.
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Affiliation(s)
- Zhijuan Zhao
- Department of Physics, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen, Fujian, 361005, China
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99
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Gan L, Zhang H, Wu R, Zhang Q, Ou X, Ding Y, Sheng P, Luo Z. Grain size control in the fabrication of large single-crystal bilayer graphene structures. NANOSCALE 2015; 7:2391-2399. [PMID: 25563192 DOI: 10.1039/c4nr06607c] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Bilayer graphene (BLG) can provide a tunable band gap when exposed to a vertical electric field. We report here an approach to the synthesis of large single-crystal BLG structures with diameters up to 0.54 mm. We found that both absorption-diffusion and gas-phase penetration mechanisms contributed to the growth of the lower second layer and that the absorption-diffusion mechanism favors faster BLG growth. Our strategy was to suppress nucleation in the growth of the first layer using an established surface oxidation method to maintain a low coverage of graphene on Cu foil. We subsequently maximized the growth of the second layer by increasing the duration of absorption-diffusion. The chemical treatment used to polish the Cu surface to reduce the nucleation of growth in the monolayer increased the nucleation density during the growth of the second layer. Electron transport measurements on dual-gated field-effect transistors showed that the BLG fabricated was of high quality with a sizeable tunable band gap. Our approach may have broad applications for the controlled synthesis of bilayers in materials chemistry.
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Affiliation(s)
- Lin Gan
- Department of Chemical and Biomolecular Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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100
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Chen YZ, Medina H, Lin HC, Tsai HW, Su TY, Chueh YL. Large-scale and patternable graphene: direct transformation of amorphous carbon film into graphene/graphite on insulators via Cu mediation engineering and its application to all-carbon based devices. NANOSCALE 2015; 7:1678-1687. [PMID: 25423257 DOI: 10.1039/c4nr04627g] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a-C) film surprisingly undergoes a noticeable transformation to crystalline graphene. Furthermore, the thickness of graphene could be controlled, depending on the thickness of the pre-deposited a-C film. The transformation mechanism was investigated and explained in detail. This approach enables development of a one-step process to fabricate electrical devices made of all carbon material, highlighting the uniqueness of the novel approach for developing graphene electronic devices. Interestingly, the carbon electrodes made directly on the graphene layer by our approach offer a good ohmic contact compared with the Schottky barriers usually observed on graphene devices using metals as electrodes.
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Affiliation(s)
- Yu-Ze Chen
- Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
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