Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern

Effective Heat Dissipation from Color-Converting Plates in High-Power White Light Emitting Diodes by Transparent Graphene Wrapping

We have developed a hybrid phosphor-in-glass plate (PGP) for application in a remote phosphor configuration of high-power white light emitting diodes (WLEDs), in which single-layer graphene was used to modulate the thermal characteristics of the PGP. The degradation of luminescence in the PGP following an increase in temperature could be prevented by applying single-layer graphene. First, it was observed that the emission intensity of the PGP was enhanced by about 20% with graphene wrapping. Notably, the surface temperature of the graphene-wrapped PGP (G-PGP) was found to be higher than that of the bare PGP, implying that the graphene layer effectively acted as a heat dissipation medium on the PGP surface to reduce the thermal quenching of the constituent phosphors. Moreover, these experimental observations were clearly verified through a two-dimensional cellular automata simulation technique and the underlying mechanisms were analyzed. As a result, the proposed G-PGP was found to be efficient in maintaining the luminescence properties of the WLED, and is a promising development in high power WLED applications. This research could be further extended to generate a new class of optical or optoelectronic materials with possible uses in a variety of applications.

Non-synchronization of lattice and carrier temperatures in light-emitting diodes

Pulse implementation or switching-off (PISO) of electrical currents has become a common operation in junction-temperature (T_j) measurements for semiconductor devices since 2004. Here we have experimentally discovered a substantial discrepancy between T_j values with, and without, PISO (e.g., 36.8 °C versus 76.5 °C above the ambient temperature at 25.0 °C). Our research indicates that methods associated with PISO are flawed due to non-synchronization of lattice temperatures and carrier temperatures in transient states. To scrutinize this discrepancy, we propose a lattice-inertia thermal anchoring mechanism that (1) explains the cause of this discrepancy, (2) helps to develop a remedy to eliminate this discrepancy by identifying three transient phases, (3) has been applied to establishing an original, accurate, and noninvasive technique for light-emitting diodes to measure T_j in the absence of PISO. Our finding may pave the foundation for LED communities to further establish reliable junction-temperature measurements based on the identified mechanism.

Graphene quantum dots-decorated ZnS nanobelts with highly efficient photocatalytic performances

Graphene quantum dots-embedded ZnS nanobelts showed 14-times higher photocatalytic activity than commercial ZnS.

Catalyst-free and selective growth of hierarchical GaN nanostructure on the graphene nanosheet

We report direct in situ selective growth of hierarchical GaN block-like nanoflakes on the graphene nanosheets without a seed/catalyst.

Excellent heat dissipation properties of the super-aligned carbon nanotube films

Excellent heat dissipation properties of multilayer super-aligned carbon nanotube films were measured and a novel CNT CPU-radiator was proposed.

Water Lubrication of Stainless Steel using Reduced Graphene Oxide Coating

Lubrication of mechanical systems using water instead of conventional oil lubricants is extremely attractive from the view of resource conservation and environmental protection. However, insufficient film thickness of water due to low viscosity and chemical reaction of water with metallic materials have been a great obstacle in utilization of water as an effective lubricant. Herein, the friction between a 440 C stainless steel (SS) ball and a 440 C stainless steel (SS) plate in water lubrication could be reduced by as much as 6-times by coating the ball with reduced graphene oxide (rGO). The friction coefficient with rGO coated ball in water lubrication was comparable to the value obtained with the uncoated ball in oil lubrication. Moreover, the wear rate of the SS plate slid against the rGO coated ball in water lubrication was 3-times lower than that of the SS plate slid against the uncoated ball in oil lubrication. These results clearly demonstrated that water can be effectively utilized as a lubricant instead of oil to lower the friction and wear of SS components by coating one side with rGO. Implementation of this technology in mechanical systems is expected to aid in significant reduction of environmental pollution caused by the extensive use of oil lubricants.

Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes

A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was achieved on sapphire by simply coating the SWCNTs as an intermediate layer for stress and defect mitigation. SWCNTs maintained their integrity at high reaction temperature and led to suppression of edge dislocations and biaxial stress relaxation by up to 0.32 GPa in a GaN template layer. InGaN/GaN multi-quantum-well light-emitting diodes (LEDs) on this high-quality GaN template offered enhanced internal quantum efficiency and light output power with reduced efficiency droop. The method developed here has high potential to replace current ELO methods such as patterned sapphire substrates or buffer layers like SiO2 and SiNx.

High through-plane thermal conduction of graphene nanoflake filled polymer composites melt-processed in an L-shape kinked tube

Design of materials to be heat-conductive in a preferred direction is a crucial issue for efficient heat dissipation in systems using stacked devices. Here, we demonstrate a facile route to fabricate polymer composites with directional thermal conduction. Our method is based on control of the orientation of fillers with anisotropic heat conduction. Melt-compression of solution-cast poly(vinylidene fluoride) (PVDF) and graphene nanoflake (GNF) films in an L-shape kinked tube yielded a lightweight polymer composite with the surface normal of GNF preferentially aligned perpendicular to the melt-flow direction, giving rise to a directional thermal conductivity of approximately 10 W/mK at 25 vol % with an anisotropic thermal conduction ratio greater than six. The high directional thermal conduction was attributed to the two-dimensional planar shape of GNFs readily adaptable to the molten polymer flow, compared with highly entangled carbon nanotubes and three-dimensional graphite fillers. Furthermore, our composite with its density of approximately 1.5 g/cm(3) was mechanically stable, and its thermal performance was successfully preserved above 100 °C even after multiple heating and cooling cycles. The results indicate that the methodology using an L-shape kinked tube is a new way to achieve polymer composites with highly anisotropic thermal conduction.

Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition

The superior photoconductive behavior of a simple, cost-effective n-GaN nanorod (NR)-graphene hybrid device structure is demonstrated for the first time. The proposed hybrid structure was synthesized on a Si (111) substrate using the high-quality graphene transfer method and the relatively low-temperature metal-organic chemical vapor deposition (MOCVD) process with a high V/III ratio to protect the graphene layer from thermal damage during the growth of n-GaN nanorods. Defect-free n-GaN NRs were grown on a highly ordered graphene monolayer on Si without forming any metal-catalyst or droplet seeds. The prominent existence of the undamaged monolayer graphene even after the growth of highly dense n-GaN NRs, as determined using Raman spectroscopy and high-resolution transmission electron microscopy (HR-TEM), facilitated the excellent transport of the generated charge carriers through the photoconductive channel. The highly matched n-GaN NR-graphene hybrid structure exhibited enhancement in the photocurrent along with increased sensitivity and photoresponsivity, which were attributed to the extremely low carrier trap density in the photoconductive channel.

Indium Tin Oxide-Free Transparent Conductive Electrode for GaN-Based Ultraviolet Light-Emitting Diodes

Transparent conducting electrodes are important components of highly efficient ultraviolet light-emitting diodes (UV LEDs). Indium tin oxide (ITO) is commonly used to form a current spreading layer, but its UV-range optical transparency is limited with a low sheet resistance. We demonstrate a simple solution-based coating technique to obtain large-area, highly uniform, and conductive silver-nanowire-based electrodes that exhibit UV-range optical transparency better than that of ITO for the same sheet resistance. The UV LEDs fabricated using this current spreading layer showed improved optical power emission as well as improvement in electrical properties.

Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes

We report the growth of high-quality GaN layer on single-walled carbon nanotubes (SWCNTs) and graphene hybrid structure (CGH) as intermediate layer between GaN and sapphire substrate by metal-organic chemical vapor deposition (MOCVD) and fabrication of light emitting diodes (LEDs) using them. The SWCNTs on graphene act as nucleation seeds, resulting in the formation of kink bonds along SWCNTs with the basal plane of the substrate. In the x-ray diffraction, Raman and photoluminescence spectra, high crystalline quality of GaN layer grown on CGH/sapphire was observed due to the reduced threading dislocation and efficient relaxation of residual compressive strain caused by lateral overgrowth process. When applied to the LED structure, the current-voltage characteristics and electroluminescence (EL) performance exhibit that blue LEDs fabricated on CGH/sapphire well-operate at high injection currents and uniformly emit over the whole emission area. We expect that CGH can be applied for the epitaxial growth of GaN on various substrates such as Si and MgO, which can be a great advantage in electrical and thermal properties of optical devices fabricated on them.

Controlling the cooperative self-assembly of graphene oxide quantum dots in aqueous solutions

The 3D supramolecular association behavior of the synthesized 2D graphene oxide quantum dots (GOQDs) could be smartly controlled in dilute aqueous solutions to tune their final properties.

Fabrication and characteristics of GaN-based light-emitting diodes with a reduced graphene oxide current-spreading layer

A reduced graphene oxide (GO) layer was produced on undoped and n-type GaN, and its effect on the current- and heat-spreading properties of GaN-based light-emitting diodes (LEDs) was studied. The reduced GO inserted between metal electrode and GaN semiconductor acted as a conducting layer and enhanced lateral current flow in the device. Especially, introduction of the reduced GO layer on the n-type GaN improved the electrical performance of the device, relative to that of conventional LEDs, due to a decrease in the series resistance of the device. The enhanced current-spreading was further of benefit, giving the device a higher light output power and a lower junction temperature at high injection currents. These results therefore indicate that reduced GO can be a suitable current and heat-spreading layer for GaN-based LEDs.

Vertically stacked color tunable light-emitting diodes fabricated using wafer bonding and transfer printing

We report on the vertically stacked color tunable light-emitting diodes (LEDs) fabricated using wafer bonding with an indium tin oxide (ITO) layer and transfer printing by the laser lift-off process. Employing optically transparent and electrically conductive ITO as an adhesion layer enables to bond the GaN-based blue and AlGaInP-based yellow LEDs. We find out that the interdiffusion of In, O, and Ga at the interface between ITO and GaP allows the strong bonding of the heterogeneous optoelectronic materials and the integration of two different color LEDs on a single substrate. The efficacy of this method is demonstrated by showing the successful control of color coordinate from the vertically stacked LEDs by modulating the individual intensity of blue and yellow emissions.

An advanced lithium-ion battery based on a graphene anode and a lithium iron phosphate cathode

We report an advanced lithium-ion battery based on a graphene ink anode and a lithium iron phosphate cathode. By carefully balancing the cell composition and suppressing the initial irreversible capacity of the anode in the round of few cycles, we demonstrate an optimal battery performance in terms of specific capacity, that is, 165 mAhg(-1), of an estimated energy density of about 190 Wh kg(-1) and a stable operation for over 80 charge-discharge cycles. The components of the battery are low cost and potentially scalable. To the best of our knowledge, complete, graphene-based, lithium ion batteries having performances comparable with those offered by the present technology are rarely reported; hence, we believe that the results disclosed in this work may open up new opportunities for exploiting graphene in the lithium-ion battery science and development.

Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes

Pristine graphene and a graphene interlayer inserted between indium tin oxide (ITO) and p-GaN have been analyzed and compared with ITO, which is a typical current spreading layer in lateral GaN LEDs. Beyond a certain current injection, the pristine graphene current spreading layer (CSL) malfunctioned due to Joule heat that originated from the high sheet resistance and low work function of the CSL. However, by combining the graphene and the ITO to improve the sheet resistance, it was found to be possible to solve the malfunctioning phenomenon. Moreover, the light output power of an LED with a graphene interlayer was stronger than that of an LED using ITO or graphene CSL. We were able to identify that the improvement originated from the enhanced current spreading by inspecting the contact and conducting the simulation.

Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters

Spotlight on etching: (11-22) semipolar GaN plane light-emitting diodes (LEDs) are demonstrated using a wet-etching process. A trigonal prism cell structure with a (0001) c plane and nnn{10-10} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs.