All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

3D monolithic integration of logic and memory has been the most sought after solution to surpass the Von Neumann bottleneck, for which a low-temperature processed material system becomes inevitable. Two-dimensional materials, with their excellent electrical properties and low thermal budget are potential candidates. Here, we demonstrate a low-temperature hybrid co-integration of one-transistor-one-resistor memory cell, comprising a surface functionalized 2D WSe₂p-FET, with a solution-processed WSe₂ Resistive Random Access Memory. The employed plasma oxidation technique results in a low Schottky barrier height of 25 meV with a mobility of 230 cm² V⁻¹ s⁻¹, leading to a 100x performance enhanced WSe₂p-FET, while the defective WSe₂ Resistive Random Access Memory exhibits a switching energy of 2.6 pJ per bit. Furthermore, guided by our device-circuit modelling, we propose vertically stacked channel FETs for high-density sub-0.01 μm² memory cells, offering a new beyond-Si solution to enable 3-D embedded memories for future computing systems.

Designing efficient, scalable and low-thermal-budget 2D Materials for 3D integration remains a challenge. Here, the authors report the development of a hybrid-(solution-processed-exfoliated) integration of 2D Material based 1T1R which uses a multilayer WSe₂p-FET and a multilayer printed WSe₂ RRAM.

Solution-processed black phosphorus nanoflakes for integrating nonvolatile resistive random access memory and the mechanism unveiled

In this study, we demonstrated the integration of black phosphorus (BP) nanoflakes in a resistive random access memory (RRAM) with a facile and complementary metal-oxide-semiconductor-compatible process. The solution-processed BP nanoflakes embedded in polystyrene (PS) as an active layer were sandwiched between aluminum electrodes (Al/BP:PS/Al). The device shows a figure of merit with typical bipolar behavior and forming-free characteristics as well as excellent memory performances such as nonvolatile, low operation voltage (1.75 V) and high ON/OFF ratio (>10²) as well as the long retention time (>1500 s). The improved device performances were attributed to the formation of effective trap sites from the hybrid structure of the active layer (BP:PS), especially the BP nanoflakes and the partly oxidized species (P _x O _y ). Moreover, the extrinsic aluminum oxide layer was observed after the device operation. The mechanism of switching behavior was further unveiled through the carrier transport models, which confirms the conductive mechanisms of space-charge-limited current and Ohmic conductance at high resistance state (HRS) and low resistance state, respectively. Additionally, in the high electric field at HRS, the transfer curve was well fitted with the Poole-Frenkel emission model, which could be attributed to the formation of the aluminum oxide layer. Accordingly, both the trapping/de-trapping of carriers and the formation/rupture of conductive filaments were introduced as transport mechanisms in our devices. Although the partial P _x O _y species on BP were inevitable during the liquid phase exfoliation process, which was regarded as the disadvantages for various applications, it turns to a key point for improving performances in memory devices. The proposed approach to integrating BP nanoflakes in the active layer of the RRAM device could pave the way for next-generation memory devices.

Memristive devices based on emerging two-dimensional materials beyond graphene

With the explosion of data in the information universe and the approaching of fundamental limits in silicon-based flash memories, the exploration of new device architectures and alternative materials is necessary for next-generation memory technology. Accordingly, emerging two-dimensional (2D) material-based memristive devices have attracted increasing attention due to their unique properties and great potential in flexible and wearable devices, and even neuromorphic computing systems. Herein, we provide an overview of the recent progress on memristive devices based on 2D materials beyond graphene. The device structures and choice of active materials and electrodes materials are summarized for various types of 2D material-based memristive devices. Following the discussion and classification on the device performances and mechanisms, the challenges and perspectives on future research based on 2D materials are also presented.

Tunable 2D-gallium arsenide and graphene bandgaps in a graphene/GaAs heterostructure: an ab initio study

The bandgap behavior of 2D-GaAs and graphene have been investigated with van der Waals heterostructured into a yet unexplored graphene/GaAs bilayer, under both uniaxial stress along c axis and different planar strain distributions. The 2D-GaAs bandgap nature changes from [Formula: see text]-K indirect in isolated monolayer to [Formula: see text]-[Formula: see text] direct in graphene/GaAs bilayer. In the latter, graphene exhibits a bandgap of 5 meV. The uniaxial stress strongly affects the graphene electronic bandgap, while symmetric in-plane strain does not open the bandgap in graphene. Nevertheless, it induces remarkable changes on the GaAs bandgap-width around the Fermi level. However, when applying asymmetric in-plane strain to graphene/GaAs, the graphene sublattice symmetry is broken, and the graphene bandgap is open at the Fermi level to a maximum width of 814 meV. This value is much higher than that reported for just graphene under asymmetric strain. The [Formula: see text]-[Formula: see text] direct bandgap of GaAs remains unchanged in graphene/GaAs under different types of applied strain. The analyses of phonon dispersion and the elastic constants yield the dynamical and mechanical stability of the graphene/GaAs system, respectively. The calculated mechanical properties for bilayer heterostructure are better than those of their constituent monolayers. This finding, together with the tunable graphene bandgap not only by the strength but also by the direction of the strain, enhance the potential for strain engineering of ultrathin group-III-V electronic devices hybridized by graphene.

Electron transfer through protein-bound water and its bioelectronic application

This article reports that a metastructure of polypeptides with the bound water can have high and stable electron conductivity without classic electron-conducting components. We used gelatin as the model protein since the peptide chains contain numerous sites capable of forming hydrogen bonds with water molecules. The lack of redox sites and the trace amounts of aromatic amino acids also eliminate the possibility that the electron transfer is due to redox reactions or pi-stacking. Our Raman spectroscopy results show that the high electron-conductive metastructure is composed of bound water and unwound gelatin polypeptides. Further removal of bound water from the metastructure dramatically decreases the electron-conductivity, indicating that bound water is crucial to connect the polypeptide chains for the electron-conductivity. In addition, the ability to switch between the low-electron-conductive typical hydrogel state and the high-electron-conductive metastructure state of the gelatin hydrogel allows the gelatin hydrogel to exhibit rewritable nonvolatile resistive memory features. The high ON/OFF current ratio of 10⁵ at a low reading voltage of 0.09 V is superior to that of conventional nonvolatile resistive memories by one order of magnitude. The discovered phenomenon of using bound water and flexible polypeptide structure for long-distance electron transfer could provide a new direction for designing highly biocompatible conducting materials or functional devices in bioelectronics.

A two-dimensional metal-organic framework accelerating visible-light-driven H2 production

The rapid consumption of non-renewable fossil fuels and the relevant critical environmental issues have significantly boosted the demand for clean, renewable and carbon-free energy sources. The conversion of solar energy into green hydrogen (H2) via photocatalytic water splitting stands out as a promising, cost-effective and environmentally friendly technology. However, the realization of large-scale solar-driven photocatalytic H2 production relies on the development of inexpensive, efficient and stable photocatalysts. Here, for the first time, we report the fabrication of Zn0.8Cd0.2S (ZCS) nanoparticles (NPs) dispersed Co-based metal-organic layers (CMLs) using an easy self-assembly approach. The as-synthesized ZCS/CML composite shows a remarkable visible-light-induced H2-production activity of 18 102 μmol h-1 g-1, 492% higher than that of pure ZCS. A series of advanced characterization studies, e.g., synchrotron-based X-ray absorption near edge structure and time-resolved photoluminescence spectroscopy, disclose that the strong electronic interaction between ZCS and CML and the abundant reactive sites on the CML lead to the significantly improved photocatalytic H2-production activity. Our contribution not only demonstrates the application of CML as an earth-abundant support and promoter to tremendously boost photocatalytic H2 production without noble-metal co-catalysts, but also sheds light on the tailored design and synthesis of metal-organic-layer based materials for energy conversion and storage.

Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices

A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of I–V fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.

Thinnest Nonvolatile Memory Based on Monolayer h-BN

2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that the atomically thin layered materials are not able to show memristive effect in vertically stacked structure, until the recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming the scaling limit to sub-nanometer. Herein, the nonvolatile resistance switching (NVRS) phenomenon in monolayer hexagonal boron nitride (h-BN), a typical 2D insulator, is reported. The h-BN atomristors are studied using different electrodes and structures, featuring forming-free switching in both unipolar and bipolar operations, with large on/off ratio (up to 10⁷ ). Moreover, fast switching speed (<15 ns) is demonstrated via pulse operation. Compared with monolayer TMDs, the one-atom-thin h-BN sheet reduces the vertical scaling to ≈0.33 nm, representing a record thickness for memory materials. Simulation results based on ab-initio method reveal that substitution of metal ions into h-BN vacancies during electrical switching is a likely mechanism. The existence of NVRS in monolayer h-BN indicates fruitful interactions between defects, metal ions and interfaces, and can advance emerging applications on ultrathin flexible memory, printed electronics, neuromorphic computing, and radio frequency switches.

Nonvolatile Memories Based on Graphene and Related 2D Materials

The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high-capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon-based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low-cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories. The physical and chemical mechanisms underlying the switching of GRM-based memory devices studied in the last decade are discussed. Although at this stage most of the proof-of-concept devices investigated do not compete with state-of-the-art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.

Direct covalent modification of black phosphorus quantum dots with conjugated polymers for information storage

It has long been recognized that a small switching bias window, which is defined as the difference between the switch-on and switch-off voltages (Δ|VON - VOFF|), and a high ON/OFF current ratio would be greatly favorable to reduce the power consumption of memory devices and to decrease the information misreading rate in digital memory devices. In contrast to two-dimensional BP nanosheets, zero dimensional BP quantum dots (BPQDs) show more exciting physical and chemical properties. By using newly synthesized poly[(9,9-dioctyl-9H-fluorene)-alt-(4-(9H-carbazol-9-yl)aniline)] (PFCz-NH2) as the synthetic precursor, a highly soluble diazotated polymer, PFCz-N2+BF4-, was successfully synthesized and used to react with BPQDs under aqueous conditions to give the first conjugated polymer covalently functionalized BPQDs (PFCz-g-BPQDs). The as-prepared Al/PFCz-g-BPQDs/ITO device exhibits excellent nonvolatile rewritable memory performance, with a large ON/OFF current ratio (>107) and low switch-on/off voltages (-0.89/+1.95 V). In contrast, the Al/PFCz-NH2 : BPQDs blend/ITO device also shows a rewritable memory effect, but its ON/OFF current ratio and Δ|VON - VOFF| value are found to be 3 × 103 and 5.47 (Δ|+2.53-2.94|), respectively. This work, which offers an easy one-step strategy for direct covalent functionalization of BPQDs, opens a way to explore more applications of BPQDs.

Microwave-Assisted Synthesis of CuS Hierarchical Nanosheets as the Cathode Material for High-Capacity Rechargeable Magnesium Batteries

Rechargeable magnesium batteries (rMBs) have been recognized as one of most promising next-generation energy storage devices with high energy and power density. However, the development of rMBs has been hampered by the lack of usable cathode materials with high capacity and cycling stability. Herein, we report an ultra-rapid, cost-effective, and scalable synthesis of ultrathin CuS hierarchical nanosheets by a one-step microwave-assisted preparation. Benefiting from the exceptional structural configuration, when used as the cathode material for rMBs at room temperature, the CuS hierarchical nanosheets deliver a high reversible discharge capacity of 300 mA h g^-1 at 20 mA g^-1, remarkable rate capability (256.5 mA h g^-1 at 50 mA g^-1 and 237.5 mA h g^-1 at 100 mA g^-1), and excellent cycling stability (135 mA h g^-1 at 200 mA g^-1 over 200 cycles). To date, the obtained excellent electrochemical performances are superior to most results ever reported for cathode materials of rMBs.

Fabrication of pixelated liquid crystal nanostructures employing the contact line instabilities of droplets

A liquid crystal (LC) droplet resting on a poly-dimethylsiloxane substrate could rapidly spread upon solvent vapour annealing to form a non-uniform film. While the solvophobic surfaces restricted the spreading of the droplet to form a thicker film upon solvent annealing, the solvophilic substrates allowed the formation of a thinner film under similar conditions. Withdrawal of the solvent exposure caused rapid evaporation of the solvent molecules from the film, especially near the retracting contact-line to form microscale LC-droplets, which shrunk into nanoscopic ones after evaporation of the excess solvent. The thinner films on solvophilic surfaces allowed the formation of droplets with smaller size and periodicity as small as ∼100 nm and ∼200 nm, respectively. Furthermore, the use of a patterned substrate could impose a large-area ordering on the nanodroplets. A theoretical model for an evaporating film of LC-solution revealed that the spacing of nanodroplets could be decided by the interplay of stabilizing and destabilizing components of capillary force while van der Waals interaction played a supportive role when the film was ultrathin near the contact line. The micro/nanodroplets thus formed showed an anomalous oscillatory rotational motion originating from the difference in the Laplace pressure near contact lines under the influence of an external electric field. The application of the Lorenz force to these droplets showed translation and rotational motions followed by ejection of satellite droplets.

Interfacial synthesis of ultrathin two-dimensional 2PbCO3·Pb(OH)2 nanosheets with high enzyme mimic catalytic activity

Ultrathin two-dimensional 2PbCO₃·Pb(OH)₂ nanosheets have been facilely synthesized at the gas/liquid interface and exhibit higher catalytic activity as peroxidase mimetic for the oxidation of TMB.

Electric field mediated elastic contact lithography of thin viscoelastic films for miniaturized and multiscale patterns

Elastic contact lithography (ECL) and electric field lithography (EFL) have both shown significant potential to develop large-area micropatterns on polymeric surfaces. Recently, the major challenges associated with these processes have been the improvement of the aspect ratio and reduction in the size and periodicity of the patterns fabricated. Herein, with the help of non-linear simulations, we show that combining these methods can be one recipe to overcome these limitations. We consider a linear viscoelastic film for the linear and non-linear analyses. In this regard, we explore the role of the moving contactor to improve the aspect ratio of the patterns. The study uncovers that (i) combined destabilizing influences originating from van der Waals and electric field forces ensure smaller timescales and length scales for the instabilities, (ii) the aid from the electric field helps to improve the minimum separation distance so that the contact instability initiates at a larger separation distance, (iii) a long-range ordering can be inflicted on the patterns on the polymer surfaces when electrodes with periodic physicochemical patterns are used and (iv) the strength of the externally applied electric field and the ratio of elastic to viscous compliance of the film play crucial roles in deciding the different modes of debonding of the film - peeling, catastrophic or coalescence. The proposed method can improve the aspect ratio of patterns by ∼9-fold during the peeling mode of debonding. Furthermore, pathways to develop technologically important biomimetic surfaces with multiscale and hierarchical structures have been shown.

Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2

Monolayer of 2D transition metal dichalcogenides, with a thickness of less than 1 nm, paves a feasible path to the development of ultrathin memristive synapses, to fulfill the requirements for constructing large-scale high density 3D stacking neuromorphic chips. Herein, memristive devices based on monolayer n-MoS₂ on p-Si substrate with a large self-rectification ratio, exhibiting photonic potentiation and electric habituation, are successfully fabricated. Versatile synaptic neuromorphic functions, such as potentiation/habituation, short-term/long-term plasticity, and paired-pulse facilitation, are successfully mimicked based on the inherent persistent photoconductivity performance and the volatile resistive switching behavior. These findings demonstrate the potential applications of ultrathin transition metal dichalcogenides for memristive synapses. These memristive synapses with the combination of photonic and electric neuromorphic functions have prospective in the applications of synthetic retinas and optoelectronic interfaces for integrated photonic circuits based on mixed-mode electro-optical operation.

Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives

Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS₂, MoSe₂, MoTe₂, WS₂ and WSe₂, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.

Triboelectrification-Enabled Self-Powered Data Storage

Data storage by any means usually requires an electric driving power for writing or reading. A novel approach for self-powered, triboelectrification-enabled data storage (TEDS) is presented. Data are incorporated into a set of metal-based surface patterns. As a probe slides across the patterned surface, triboelectrification between the scanning probe and the patterns produces alternatively varying voltage signal in quasi-square wave. The trough and crest of the quasi-square wave signal are coded as binary bits of "0" and "1," respectively, while the time span of the trough and the crest is associated with the number of bits. The storage of letters and sentences is demonstrated through either square-shaped or disc-shaped surface patterns. Based on experimental data and numerical calculation, the theoretically predicted maximum data storage density could reach as high as 38.2 Gbit in-2. Demonstration of real-time data retrieval is realized with the assistance of software interface. For the TEDS reported in this work, the measured voltage signal is self-generated as a result of triboelectrification without the reliance on an external power source. This feature brings about not only low power consumption but also a much more simplified structure. Therefore, this work paves a new path to a unique approach of high-density data storage that may have widespread applications.

Wafer-Scale Ultrathin Two-Dimensional Conjugated Microporous Polymers: Preparation and Application in Heterostructure Devices

In this work, we report a universal surface-assisted oxidative polymerization strategy for wafer-scale fabrication of ultrathin two-dimensional conjugated microporous polymers (2D CMPs) on arbitrary substrates under ambient conditions. Three kinds of 2D CMPs with average thickness of 1.5-3.6 nm were prepared on SiO₂/Si substrates by using carbazole based monomers. Moreover, 2D CMPs can be grown on reduced graphene oxide (rGO) substrate to construct large-area 2D CMP/rGO heterostructure. As a proof-of-concept demonstration, an organic vertical field-effect transistor based on 2D CMP/rGO heterostructures was fabricated, which exhibited typical p-type behavior with high reproducibility and on/off current ratio. Most importantly, the direct growth of large-area 2D CMPs on arbitrary substrates is compatible with the conventional processes in the semiconductor industry, and therefore is expected to expedite the development of 2D CMPs as building blocks for construction of practical electronic devices.

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience including topologically protected charge transport,1,2 spatially separated excitons,3 and strongly anisotropic heat transport.4 Here, we report the intriguing observation of stable nonvolatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX₂, M = Mo, W; and X = S, Se) transitional metal dichalcogenides (TMDs),5 which alludes to the universality of this phenomenon in TMD monolayers and offers forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament, and interfacial redox in bulk oxides and electrolytes,6-9 inspires new studies on defects, ion transport, and energetics at the sharp interfaces between atomically thin sheets and conducting electrodes. Our findings overturn the contemporary thinking that nonvolatile switching is not scalable to subnanometre owing to leakage currents.10 Emerging device concepts in nonvolatile flexible memory fabrics, and brain-inspired (neuromorphic) computing could benefit substantially from the wide 2D materials design space. A new major application, zero-static power radio frequency (RF) switching, is demonstrated with a monolayer switch operating to 50 GHz.

Enhanced Electrocatalytic Hydrogen Evolution from Large-Scale, Facile-Prepared, Highly Crystalline WTe2 Nanoribbons with Weyl Semimetallic Phase

Tungsten ditellurium (WTe₂) is one of most important layered transition metal dichalcogenides (TMDs) and exhibits various prominent physical properties. All the present methods for WTe₂ preparation need strict conditions such as high temperature or cannot be applied in large scale, which limits its practical applications. In addition, most studies on WTe₂ focus on its physical properties, whereas its electrochemical properties are still illusive with little investigation. Here, we develop a facile and scalable two-step method to synthesize high-quality WTe₂ nanoribbon crystals with 1T' Weyl semimetal phase for the first time. Highly crystalline 1T'-WTe₂ nanoribbons can be obtained on a large scale through this two-step method. In addition, the electrochemical tests show that WTe₂ nanoribbons exhibit smaller overpotential and much better hydrogen evolution reaction catalytic performance than other tungsten-based sulfide and selenide (WS₂, WSe₂) nanoribbons of same morphology and under same preparation conditions. WTe₂ nanoribbons show a Tafel slope of 57 mV/dec, which is one of best values for TMD catalysts and about 2 and 4 times smaller than that for 2H-WS₂ nanoribbons (135 mV/dec) and 2H-WSe₂ nanoribbons (213 mV/dec), respectively. 1T'-WTe₂ nanoribbons also show ultrahigh stability in 5000 cycles and 20 h at 10 mA/cm². The better performance is attributed to high conductivity of semimetallic 1T'-phase-stable WTe₂ nanoribbons with one or two order higher charge-transfer rate than normally semiconducting 2H-stable WS₂ and WSe₂ nanoribbons. These results open the door for electrochemical applications of Weyl semimetallic TMDs.

An all-in-one memory cell based on a homopolymer with a pyrene side chain and its volatile and nonvolatile resistive switch behaviors

Memory devices based on PMPPE exhibit a rewritable ternary memory behaviour (0, 1, 2, three conductivity states).

Mixed Phthalocyanine-Porphyrin Fused Conjugated Pentameric Nanoarrays

The largest phthalocyanine-porphyrin-fused pentameric molecular arrays have been synthesized and spectroscopically characterized. The saddled molecular conformation revealed for the pentamer by DFT-D3 calculation in combination with the bulky peripheral substituents precludes effective face-to-face π-π intermolecular interaction. As a consequence, intermolecular C-H⋅⋅⋅π interactions together with the ubiquitous dispersion force arrays help to self-assemble the representative metal-free pentameric molecules into the three-dimensional supramolecular structures with nanorod morphology in CHCl₃ and n-butanol. Powder X-ray diffraction (XRD) analysis and selected area electron diffraction (SAED) disclose the gradually increased long range of molecular ordering in the nanorods along with the increase in the substrate temperature from 30, 40, 50, to 60 °C. This in turn results in an increase in the semiconductivity of the single nanorod in the same order from 9.4×10^-9 to 3.8×10^-8 , 7.6×10^-7 , and 6.3×10^-5  S m^-1 .

RGD-QD-MoS2 nanosheets for targeted fluorescent imaging and photothermal therapy of cancer

The fast-developing field of nanotechnology provides unprecedented opportunities for the increasing demands of biomedicine, especially for cancer diagnostics and treatment. Here, novel multifunctional zero-dimensional-two-dimensional (0D-2D) RGD-QD-MoS₂ nanosheets (NSs) with excellent fluorescence, photothermal conversion, and cancer-targeting properties were successfully prepared by functionalizing single-layer MoS₂ NSs with fluorescent quantum dots (QDs) and arginine-glycine-aspartic (RGD) containing peptides. By using RGD-QD-MoS₂ NSs as a multifunctional theranostic agent, targeted fluorescent imaging and photothermal therapy (PTT) of human cervical carcinoma (HeLa) cells were achieved. Moreover, HeLa tumors in mouse models can be fluorescently imaged and completely eradicated by photothermal irradiation using a low power NIR laser, due to the effective accumulation of RGD-QD-MoS₂ NSs at the tumor sites through the RGD-integrin targeting and the enhanced penetration and retention (EPR) effect. Without exhibiting any appreciable toxicity to treated cells or animals, RGD-QD-MoS₂ NSs have been demonstrated as promising multifunctional theranostic agents for cancer imaging and therapy.

Ultrathin Two-Dimensional Multinary Layered Metal Chalcogenide Nanomaterials

Ultrathin two-dimensional (2D) layered transition metal dichalcogenides (TMDs), such as MoS₂ , WS₂ , TiS₂ , TaS₂ , ReS₂ , MoSe₂ and WSe₂ , have attracted considerable attention over the past six years owing to their unique properties and great potential in a wide range of applications. Aiming to achieve tunable properties and optimal application performances, great effort is devoted to the exploration of 2D multinary layered metal chalcogenide nanomaterials, which include ternary metal chalcogenides with well-defined crystal structures, alloyed TMDs, heteroatom-doped TMDs and 2D metal chalcogenide heteronanostructures. These novel 2D multinary layered metal chalcogenide nanomaterials exhibit some unique properties compared to 2D binary TMD counterparts, thus holding great promise in various potential applications including electronics/optoelectronics, catalysis, sensors, biomedicine, and energy storage and conversion with enhanced performances. This article focuses on the state-of-art progress on the preparation, characterization and applications of ultrathin 2D multinary layered metal chalcogenide nanomaterials.

Spin Hall Effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures

We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. The graphene/WS₂ system is found to maximize spin proximity effects compared to graphene on MoS₂, WSe₂, or MoSe₂ with a crucial role played by disorder, given the disappearance of SHE signals in the presence of strong intervalley scattering. Notably, we found that stronger WAL effects are concomitant with weaker charge-to-spin conversion efficiency. For further experimental studies of graphene/TMDC heterostructures, our findings provide guidelines for reaching the upper limit of spin current formation and for fully harvesting the potential of two-dimensional materials for spintronic applications.

Conjugated polymer covalently modified graphene oxide quantum dots for ternary electronic memory devices

Zero dimensional graphene oxide (GO) quantum dots (GOQDs) have been expected to play an important role in the development of new memory materials. When the size of GO was reduced to that of GOQDs, both the electron affinity and ionization potential of GO were found to be decreased, and this was followed by the elevation of lowest energy unoccupied molecular orbital (LUMO) energy level. This implies that the electron withdrawing ability of GOQDs is weaker than that of GO. In this work, a novel arylamine-based polyazomethine covalently functionalized graphene oxide quantum dots (TPAPAM-GOQDs), which was synthesized using an amidation reaction, was for the first time used to fabricate a ternary memory device with a configuration of gold/TPAPAM-GOQDs/indium tin oxide. The current ratio of OFF : ON-1 : ON-2 was found to be 1 : 60 : 3000. Its conductive nature was also revealed using an in situ conductive atomic force microscopy technique. This memory device could potentially increase the memory capacity of the device from the conventional 2ⁿ to 3ⁿ when compared to binary memory devices.

Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Solution-processed black phosphorus quantum-dot-based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.

An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices

Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), are the focus of wide research interest. They can be the key to improving bandwidths in telecommunications, capacity in data storage, and new features in consumer electronics, safety devices, and medical equipment. The characterization of these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Furthermore, proof-of-concept devices are usually fabricated from micro-meter size flakes, requiring microscopy techniques to characterize them. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through atmospheric contamination. Here, we present an integrated, multi-purpose instrument dedicated to the optical and electrical characterization of devices based on 2D materials which is able to perform low frequency electrical measurements, scanning photocurrent mapping, and Raman, absorption, and PL spectroscopy in one single setup with full control over the polarization and wavelength of light. We characterize this apparatus by performing multiple measurements on graphene, transition metal dichalcogenides (TMDs), and Si. The performance and resolution of each individual measurement technique is found to be equivalent to that of commercially available instruments. Contrary to nowadays' commercial systems, a significant advantage of the developed instrument is that for the first time the integration of a wide range of complementary optoelectronic and spectroscopy characterization techniques is demonstrated in a single compact unit. Our design offers a versatile solution to face the challenges imposed by the advent of atomically thin materials in optoelectronic devices.

Flexible Nonvolatile Transistor Memory with Solution-Processed Transition Metal Dichalcogenides

Nonvolatile field-effect transistor (FET) memories containing transition metal dichalcogenide (TMD) nanosheets have been recently developed with great interest by utilizing some of the intriguing photoelectronic properties of TMDs. The TMD nanosheets are, however, employed as semiconducting channels in most of the memories, and only a few works address their function as floating gates. Here, a floating-gate organic-FET memory with an all-in-one floating-gate/tunneling layer of the solution-processed TMD nanosheets is demonstrated. Molybdenum disulfide (MoS₂ ) is efficiently liquid-exfoliated by amine-terminated polystyrene with a controlled amount of MoS₂ nanosheets in an all-in-one floating-gate/tunneling layer, allowing for systematic investigation of concentration-dependent charge-trapping and detrapping properties of MoS₂ nanosheets. At an optimized condition, the nonvolatile memory exhibits memory performances with an ON/OFF ratio greater than 10⁴ , a program/erase endurance cycle over 400 times, and data retention longer than 7 × 10³ s. All-in-one floating-gate/tunneling layers containing molybdenum diselenide and tungsten disulfide are also developed. Furthermore, a mechanically-flexible TMD memory on a plastic substrate shows a performance comparable with that on a hard substrate, and the memory properties are rarely altered after outer-bending events over 500 times at the bending radius of 4.0 mm.

Spatially composition-modulated two-dimensional WS2xSe2(1-x) nanosheets

Controllable synthesis of two-dimensional (2D) transition-metal dichalcogenides (TMDs) with tunable bandgaps is vital for their applications in nanophotonics, due to its efficient modulation of the physical and chemical properties of these atomic layered nanostructures. Here we report for the first time, the controllable synthesis of spatially composition-modulated WS_2xSe_2(1-x) nanosheets and WS₂-WS_2xSe_2(1-x) lateral heterostructures by a developed one-step chemical vapor deposition (CVD) approach, as well as the understanding of their growth mechanism. During the growth, the composition was optically tuned along the plane of the atomic layered nanosheets through the precise control of evaporation sources. Microstructure characterization confirms the chemical identity of the composition modulated nanosheets, with S and Se contents gradually converting from the center to the edge. Local photoluminescence (PL) and Raman studies further demonstrate the position-dependent optical properties of the as-grown nanosheets, with the PL peak and Raman modes shifting in a wide range along the whole plane of the nanostructures, which are consistent with their tunable compositions and bandgaps. This demonstration of composition-modulated nanostructures provides a beneficial approach for the preparation of 2D semiconductor heterostructures and may open up a wide range of applications in nanoelectronics and optoelectronics.

Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide-Titanium Oxide Memories

Graphene oxide (GO) resistive memories offer the promise of low-cost environmentally sustainable fabrication, high mechanical flexibility and high optical transparency, making them ideally suited to future flexible and transparent electronics applications. However, the dimensional and temporal scalability of GO memories, i.e., how small they can be made and how fast they can be switched, is an area that has received scant attention. Moreover, a plethora of GO resistive switching characteristics and mechanisms has been reported in the literature, sometimes leading to a confusing and conflicting picture. Consequently, the potential for graphene oxide to deliver high-performance memories operating on nanometer length and nanosecond time scales is currently unknown. Here we address such shortcomings, presenting not only the smallest (50 nm), fastest (sub-5 ns), thinnest (8 nm) GO-based memory devices produced to date, but also demonstrate that our approach provides easily accessible multilevel (4-level, 2-bit per cell) storage capabilities along with excellent endurance and retention performance-all on both rigid and flexible substrates. Via comprehensive experimental characterizations backed-up by detailed atomistic simulations, we also show that the resistive switching mechanism in our Pt/GO/Ti/Pt devices is driven by redox reactions in the interfacial region between the top (Ti) electrode and the GO layer.

Fluorine-Induced Highly Reproducible Resistive Switching Performance: Facile Morphology Control through the Transition between J- and H-Aggregation

Improving the reproducibility and air-endurance of organic resistance switching (RS) devices, in particular multilevel-cell RS devices, is critical for the confirmation of its competency to realize big data storage capability. However, such enhancement still remains challenging. In this report, we demonstrated that fluorine (F)-embedding should be an effective way to enhance the overall performance of RS devices. Four new azo-cored analogues (IDAZO, FIDAZO, F₂IDAZO, and F₄IDAZO) have been designed and synthesized. These four compounds have similar structures with different numbers of F substituents. Interestingly, UV-vis measurements reveal that upon F-embedding, an exceptional transition from molecular J-aggregation to H-aggregation is achieved. As a result, the morphology of RS films becomes more and more uniform, as determined by AFM and XRD. Meanwhile, the hydrophobicity of RS film is promoted, which further improves the device atmospheric stability. The total RS reproducibility increases to 96% (the uppermost value), and the tristage RS reproducibility rises to 64%, accompanied by a more stable OFF state and lower logic SET voltages. Our study suggests F-embedding would be a promising strategy to achieve highly reproducible and air-endurable organic multilevel-cell RS devices.

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocatalysis, batteries, supercapacitors, solar cells, photocatalysis, and sensing platforms. Finally, the challenges and outlooks in this promising field are featured on the basis of its current development.

Two-Dimensional Nanomaterials for Cancer Nanotheranostics

Emerging nanotechnologies show unprecedented advantages in accelerating cancer theranostics. Among them, two-dimensional nanomaterials (2DNMs) represent a novel type of material with versatile physicochemical properties that have enabled a new horizon for applications in both cancer diagnosis and therapy. Studies have demonstrated that 2DNMs may be used in diverse aspects, including i) cancer detection due to their high propensity towards tumor markers; ii) molecular imaging for guided tumor therapies, and iii) drug and gene loading, photothermal and photodynamic cancer therapies. However, their biomedical applications raise concerns due to the limited understanding of their in vivo metabolism, transformation and possible toxicities. In this comprehensive review, the state-of-the-art development of 2DNMs and their implications for cancer nanotheranostics are presented. The modification strategies to enhance the biocompatibility of 2DNMs are also reviewed.

Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 10⁴ s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.

Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS2 nanosheets for nonvolatile rewritable memory devices

A novel nonvolatile rewritable memory device based on the soluble poly(N-vinylcarbazole)-chemically modified MoS₂ nanosheets (MoS₂-PVK) was fabricated with the configuration of Au/MoS₂-PVK/ITO. This is the first example of polymer covalently modified MoS₂ nanosheet-based memory devices. As expected, this device exhibited a typical storage performance of nonvolatile rewritable memory, with a turn-on voltage of -1.54 V and an ON/OFF current ratio of 4 × 10². After annealing at 80 °C for 1 h under a nitrogen atmosphere, a high ON/OFF current ratio (up to 3 × 10⁴) and a lower turn-on voltage (-1.31 V), which are among the best reported for MoS₂-based polymer/organic memory devices, were achieved due to enhanced crystallization of PVK, which induced a more efficient intramolecular charge transfer effect between PVK and MoS₂ during the annealing process. The effect of film thickness on the current-voltage characteristics of the MoS₂-PVK-based devices and the memory performance of the MoS₂/PVK blends-based devices have also been explored.

Recent Advances in Synthesis and Biomedical Applications of Two-Dimensional Transition Metal Dichalcogenide Nanosheets

During recent decades, a giant leap in the development of nanotechnology has been witnessed. Numerous nanomaterials with different dimensions and unprecedented features have been developed and provided unimaginably wide scope to solve the challenging problems in biomedicine, such as cancer diagnosis and therapy. Recently, two-dimensional (2D) transition metal dichalcogenide (TMDC) nanosheets (NSs), including MoS₂ , WS₂ , and etc., have emerged as novel inorganic graphene analogues and attracted tremendous attention due to their unique structures and distinctive properties, and opened up great opportunities for biomedical applications, including ultrasensitive biosensing, biological imaging, drug delivery, cancer therapy, and antibacterial treatment. A comprehensive overview of different synthetic methods of ultrathin 2D TMDC NSs and their state-of-the-art biomedical applications, especially those that have appeared in the past few years, is presented. At the end of this review, the future opportunities and challenges for 2D TMDC NSs in biomedicine are also discussed.

Development of Conjugated Polymers for Memory Device Applications

This review summarizes the most widely used mechanisms in memory devices based on conjugated polymers, such as charge transfer, space charge traps, and filament conduction. In addition, recent studies of conjugated polymers for memory device applications are also reviewed, discussed, and differentiated based on the mechanisms and structural design. Moreover, the electrical conditions of conjugated polymers can be further fine-tuned by careful design and synthesis based on the switching mechanisms. The review also emphasizes and demonstrates the structure-memory properties relationship of donor-acceptor conjugated polymers for advanced memory device applications.

Pattern-Directed Ordering of Spin-Dewetted Liquid Crystal Micro- or Nanodroplets as Pixelated Light Reflectors and Locomotives

Chemical pattern directed spin-dewetting of a macroscopic droplet composed of a dilute organic solution of liquid crystal (LC) formed an ordered array of micro- and nanoscale LC droplets. Controlled evaporation of the spin-dewetted droplets through vacuum drying could further miniaturize the size to the level of ∼90 nm. The size, periodicity, and spacing of these mesoscale droplets could be tuned with the variations in the initial loading of LC in the organic solution, the strength of the centripetal force on the droplet, and the duration of the evaporation. A simple theoretical model was developed to predict the spacing between the spin-dewetted droplets. The patterned LC droplets showed a reversible phase transition from nematic to isotropic and vice versa with the periodic exposure of a solvent vapor and its removal. A similar phase transition behavior was also observed with the periodic increase or reduction of temperature, suggesting their usefulness as vapor or temperature sensors. Interestingly, when the spin-dewetted droplets were confined between a pair of electrodes and an external electric field was applied, the droplets situated at the hydrophobic patches showed light-reflecting properties under the polarization microscopy highlighting their importance in the development of micro- or nanoscale LC displays. The digitized LC droplets, which were stationary otherwise, showed dielectrophoretic locomotion under the guidance of the external electric field beyond a threshold intensity of the field. Remarkably, the motion of these droplets could be restricted to the hydrophilic zones, which were confined between the hydrophobic patches of the chemically patterned surface. The findings could significantly contribute in the development of futuristic vapor or temperature sensors, light reflectors, and self-propellers using the micro- or nanoscale digitized LC droplets.

Graphene Oxide Nanoribbon Assembly toward Moisture-Powered Information Storage

Moisture-powered potential switching is achieved by establishing ion channels and an oxygen-functional-group gradient in graphene oxide nanoribbon network assemblies. The resulting flexible membrane is used to fabricate breath-powered write-once-read-many-times-type memory devices with a remarkably low error risk (ON/OFF ratio of 10⁶ ), and long-term stability for reading out with human breath.

Green synthesis of luminescent and defect-free bio-nanosheets of MoS2: interfacing two-dimensional crystals with hydrophobins

High quality luminescent nanosheets of MoS₂ interfaced with the amphiphilic protein Vmh2.

Facile synthesis and enhanced electrochemical properties of reduced graphene oxide/MoS2/polyaniline ternary composites

Ternary composites of reduced graphene oxide/molybdenum disulfide/polyaniline with superior electrochemical performances were prepared via a two-stage facile synthesis.

Reducing a cocrystal to nanoscale dimensions enables retention of physical crystal integrity upon dehydration

We report the preparation and dehydration of a cocrystal of caffeine and 2,4-dihydroxybenzoic acid.

Au@MoS2 Core-Shell Heterostructures with Strong Light-Matter Interactions

There are emerging opportunities to harness diverse and complex geometric architectures based on nominal two-dimensional atomically layered structures. Herein we report synthesis and properties of a new core-shell heterostructure, termed Au@MoS₂, where the Au nanoparticle is snugly and contiguously encapsulated by few shells of MoS₂ atomic layers. The heterostructures were synthesized by direct growth of multilayer fullerene-like MoS₂ shell on Au nanoparticle cores. The Au@MoS₂ heterostructures exhibit interesting light-matter interactions due to the structural curvature of MoS₂ shell and the plasmonic effect from the underlying Au nanoparticle core. We observed significantly enhanced Raman scattering and photoluminescence emission on these heterostructures. We attribute these enhancements to the surface plasmon-induced electric field, which simulations show to mainly localize within the MoS₂ shell. We also found potential evidence for the charge transfer-induced doping effect on the MoS₂ shell. The DFT calculations further reveal that the structural curvature of MoS₂ shell results in a modification of its electronic structure, which may facilitate the charge transfer from MoS₂ to Au. Such Au@MoS₂ core-shell heterostructures have the potential for future optoelectronic devices, optical imaging, and other energy-environmental applications.