Transparent Conducting Oxides-An Up-To-Date Overview

Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

In this study, Ga₂O₃-doped ZnO (GZO) thin films were deposited on glass and flexible polyimide (PI) substrates at room temperature (300 K), 373 K, and 473 K by the radio frequency (RF) magnetron sputtering method. After finding the deposition rate, all the GZO thin films with a nano-scale thickness of about 150 ± 10 nm were controlled by the deposition time. X-ray diffraction patterns indicated that the GZO thin films were not amorphous and all exhibited the (002) peak, and field emission scanning electron microscopy showed that only nano-scale particles were observed. The dependences of the structural, electrical, and optical properties of the GZO thin films on different deposition temperatures and substrates were investigated. X-ray photoemission spectroscopy (XPS) was used to measure the elemental composition at the chemical and electronic states of the GZO thin films deposited on different substrates, which could be used to clarify the mechanism of difference in electrical properties of the GZO thin films. In this study, the XPS binding energy spectra of Ga2p_3/2 and Ga2p_1/2 peaks, Zn2p_3/2 and Zn2p_1/2 peaks, the Ga3d peak, and O₁_s peaks for GZO thin films on glass and PI substrates were well compared.

High-Throughput Synthesis, Screening, and Scale-Up of Optimized Conducting Indium Tin Oxides

A high-throughput optimization and subsequent scale-up methodology has been used for the synthesis of conductive tin-doped indium oxide (known as ITO) nanoparticles. ITO nanoparticles with up to 12 at % Sn were synthesized using a laboratory scale (15 g/hour by dry mass) continuous hydrothermal synthesis process, and the as-synthesized powders were characterized by powder X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray analysis, and X-ray photoelectron spectroscopy. Under standard synthetic conditions, either the cubic In2O3 phase, or a mixture of InO(OH) and In2O3 phases were observed in the as-synthesized materials. These materials were pressed into compacts and heat-treated in an inert atmosphere, and their electrical resistivities were then measured using the Van der Pauw method. Sn doping yielded resistivities of ∼ 10(-2) Ω cm for most samples with the lowest resistivity of 6.0 × 10(-3) Ω cm (exceptionally conductive for such pressed nanopowders) at a Sn concentration of 10 at %. Thereafter, the optimized lab-scale composition was scaled-up using a pilot-scale continuous hydrothermal synthesis process (at a rate of 100 g/hour by dry mass), and a comparable resistivity of 9.4 × 10(-3) Ω cm was obtained. The use of the synthesized TCO nanomaterials for thin film fabrication was finally demonstrated by deposition of a transparent, conductive film using a simple spin-coating process.

Multi-Material Front Contact for 19% Thin Film Solar Cells

The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,Ga)Se₂ (CIGS), CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO) sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

Highly conductive air-stable ZnO thin film formation under in situ UV illumination for an indium-free transparent electrode

In situ UV irradiation during ALD cycles generates oxygen-vacancies, partially removes O–H bonds, and thereby produces a highly transparent and highly conductive air-stable ZnO film.

Corundum type indium oxide nanostructures: ambient pressure synthesis from InOOH, and optical and photocatalytic properties

A simple, cost effective, surfactant free and scalable synthesis of rh-In₂O₃ nanostructures showing intense blue light emission has been developed under ambient pressure.

Nitrogen-doped graphene films from chemical vapor deposition of pyridine: influence of process parameters on the electrical and optical properties

Graphene films were produced by chemical vapor deposition (CVD) of pyridine on copper substrates. Pyridine-CVD is expected to lead to doped graphene by the insertion of nitrogen atoms in the growing sp(2) carbon lattice, possibly improving the properties of graphene as a transparent conductive film. We here report on the influence that the CVD parameters (i.e., temperature and gas flow) have on the morphology, transmittance, and electrical conductivity of the graphene films grown with pyridine. A temperature range between 930 and 1070 °C was explored and the results were compared to those of pristine graphene grown by ethanol-CVD under the same process conditions. The films were characterized by atomic force microscopy, Raman and X-ray photoemission spectroscopy. The optical transmittance and electrical conductivity of the films were measured to evaluate their performance as transparent conductive electrodes. Graphene films grown by pyridine reached an electrical conductivity of 14.3 × 10(5) S/m. Such a high conductivity seems to be associated with the electronic doping induced by substitutional nitrogen atoms. In particular, at 930 °C the nitrogen/carbon ratio of pyridine-grown graphene reaches 3%, and its electrical conductivity is 40% higher than that of pristine graphene grown from ethanol-CVD.

Microscopic Investigations into the Effect of Surface Treatment of Cathode and Electron Transport Layer on the Performance of Inverted Organic Solar Cells

Surface treatments of various layers in organic solar cells play a vital role in determining device characteristics. In this manuscript, we report on the influence of surface treatment of indium tin oxide (ITO) electrode and electron transport layer (ETL), ZnO, on the photovoltaic performance of inverted organic solar cells (IOSC) and their correlation with the surface chemistry and surface potential as studied using X-ray photoelectron spectroscopy (XPS) and Kelvin probe force microscopy (KPFM), using the device structure glass/ITO/ZnO/P3HT: PCBM/MoO3/(Au or Ag) (P3HT, poly(3-hexylthiophene-2,5-diyl), and PCBM, phenyl-C61-butyric acid methyl ester). Our results show that although ozonization of ITO leads to an improvement in the device power conversion efficiency, the ozonization of a subsequent ZnO layer results in a decreased performance mainly because of a decrease in the fill factor (FF). However, subsequent methanol (CH3OH) treatment of ZnO layer on an ozonized ITO electrode shows substantial improvement with device efficiencies exceeding ∼4% along with superior reproducibility of the devices. Furthermore, a detailed analysis of the surface wettability, chemistry, and surface potential using contact angle measurements, XPS, and KPFM attribute the improvements to the elimination of surface defects and the changes in the surface potential. Finally, impedance analysis suggests that methanol treatment of the ZnO layers leads to the development of a favorable nanophase structure with higher conductivity, which is otherwise indiscernible using microscopic methods.

A first-principles study of the electronic and structural properties of Sb and F doped SnO2 nanocrystals

We examine the electronic properties of Sb and F doped SnO2 nanocrystals up to 2.4 nm in diameter. A real-space pseudopotential implementation of density functional theory is employed within the local density approximation. We calculate electron binding energies and dopant formation energies as function of nanocrystal size, dopant concentration, and dopant species. Structural changes for different dopant species are also investigated. Our study should provide useful information for the design of transparent conducting oxides at the nanoscale.

Highly transparent conducting cerium incorporated CdO thin films deposited by a spray pyrolytic technique

In the present work, a spray pyrolysis technique was employed to deposit cerium (Ce) doped cadmium oxide (CdO) thin films with low level doping concentrations (0.25, 0.50, 0.75 and 1.0 wt%).

Substrate selection for fundamental studies of electrocatalysts and photoelectrodes: inert potential windows in acidic, neutral, and basic electrolyte

The selection of an appropriate substrate is an important initial step for many studies of electrochemically active materials. In order to help researchers with the substrate selection process, we employ a consistent experimental methodology to evaluate the electrochemical reactivity and stability of seven potential substrate materials for electrocatalyst and photoelectrode evaluation. Using cyclic voltammetry with a progressively increased scan range, we characterize three transparent conducting oxides (indium tin oxide, fluorine-doped tin oxide, and aluminum-doped zinc oxide) and four opaque conductors (gold, stainless steel 304, glassy carbon, and highly oriented pyrolytic graphite) in three different electrolytes (sulfuric acid, sodium acetate, and sodium hydroxide). We determine the inert potential window for each substrate/electrolyte combination and make recommendations about which materials may be most suitable for application under different experimental conditions. Furthermore, the testing methodology provides a framework for other researchers to evaluate and report the baseline activity of other substrates of interest to the broader community.

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10⁻³ Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002) to (101) planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

Biocompatibility and Surface Properties of TiO₂ Thin Films Deposited by DC Magnetron Sputtering

We present the study of the biocompatibility and surface properties of titanium dioxide (TiO₂) thin films deposited by direct current magnetron sputtering. These films are deposited on a quartz substrate at room temperature and annealed with different temperatures (100, 300, 500, 800 and 1100 °C). The biocompatibility of the TiO₂ thin films is analyzed using primary cultures of dorsal root ganglion (DRG) of Wistar rats, whose neurons are incubated on the TiO₂ thin films and on a control substrate during 18 to 24 h. These neurons are activated by electrical stimuli and its ionic currents and action potential activity recorded. Through X-ray diffraction (XRD), the surface of TiO₂ thin films showed a good quality, homogeneity and roughness. The XRD results showed the anatase to rutile phase transition in TiO₂ thin films at temperatures between 500 and 1100 °C. This phase had a grain size from 15 to 38 nm, which allowed a suitable structural and crystal phase stability of the TiO₂ thin films for low and high temperature. The biocompatibility experiments of these films indicated that they were appropriated for culture of living neurons which displayed normal electrical behavior.

Role of SiNx Barrier Layer on the Performances of Polyimide Ga₂O₃-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

In this study, silicon nitride (SiN_x) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiN_x/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiN_x thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiN_x thin films were a working pressure of 800 × 10⁻³ Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH₄ = 20 sccm and NH₃ = 210 sccm, respectively. For the GZO/PI and GZO-SiN_x/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiN_x/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiN_x/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiN_x/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiN_x/PI.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO_x) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeO_x interface materials consisting of binary compounds A_xB_y. Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed.