“Giant” Multishell CdSe Nanocrystal Quantum Dots with Suppressed Blinking

Enhanced Near-Infrared-to-Visible Upconversion by Synthetic Control of PbS Nanocrystal Triplet Photosensitizers

Photon upconversion employing semiconductor nanocrystals (NCs) makes use of their large and tunable absorption to harvest light in the near-infrared (NIR) wavelengths as well as their small gap between singlet and triplet excited states to reduce energy losses. Here, we report the highest QY (11.8%) thus far for the conversion of NIR to yellow photons by improving the quality of the PbS NC. This high QY was achieved by using highly purified lead and thiourea precursors. This QY is 2.6 times higher than from NCs prepared with commercially available lead and sulfide precursors. Transient absorption spectroscopy reveals two reasons for the enhanced QY: longer intrinsic exciton lifetimes of PbS NCs and the ability to support a longer triplet lifetime for the surface-bound transmitter molecule. Overall, this results in a higher efficiency of triplet exciton transfer from the PbS NC light absorber to the emitter and thus a higher photon upconversion QY.

The role of excitons within the hole transporting layer in quantum dot light emitting device degradation

This work investigates the root causes of the limited stability of electroluminescent quantum dot light-emitting devices (QDLEDs). Studies using electrical measurements, continuous UV irradiation, and both steady-state and transient photoluminescence (PL) spectroscopy reveal that exciton-induced degradation of the hole transporting material (HTM) in QDLEDs plays a role in limiting their electroluminescence (EL) stability. The results indicate that there is a correlation between device EL stability and the susceptibility of the HTM to exciton-induced degradation. The presence of quenchers in the HTM layer can lead to a decrease in the luminescence quantum yield of QDs, suggesting that energy transfer between the QD and HTM films may play a role in this behavior. The results uncover a new degradation mechanism where excitons within the HTM limit the EL stability of QDLEDs.

Visual Appearance of Nanocrystal-Based Luminescent Solar Concentrators

The luminescent solar concentrator (LSC) is a promising concept for the integration of photovoltaic (PV) generators into the building envelope. Having the form of semitransparent plates, LSCs offer a high degree of flexibility and can be used as windows or facades, as part of the of building-integrated photovoltaic (BIPV) industry. Existing performance characterizations of LSC devices focus almost exclusively on electric power generation. However, when used as window components, the transmitted spectrum can alter the color, potentially affecting the visual comfort of the occupants by altering the properties of the sunlight. In this study, eight different state-of-the-art nanocrystals are evaluated as potential candidates for LSC window luminophores, using Monte Carlo simulations. The transparency of each LSC window varies between 90% and 50%, and the color-rendering properties are assessed with respect to the color rendering index (CRI) and the correlated color temperature (CCT). It is found that luminophores with a wide absorption bandwidth in the visible spectrum can maintain a high CRI value (above 85) and CCT values close to the Planckian locus, even for high luminophore concentrations. In contrast, luminophores that only absorb partly in the visible spectrum suffer from color distortion, a situation characterized by low CCT and CRI values, even at high transmittance.

Predictable spectroscopic properties of type-II ZnTe/CdSe nanocrystals and electron/hole quenching

The spectroscopic properties of core/shell structured ZnTe/CdSe nanocrystals (NCs) have been systematically studied. By varying the ZnTe core diameter and the CdSe shell thickness, the absorption onset and the photoluminescence peak position of the ZnTe/CdSe NCs can be readily tuned over a wide range. The theoretical model based on an effective mass approximation demonstrates that the ZnTe/CdSe NCs have type II carrier localization in which the photoexcited electrons and holes are spatially separated and confined in the shell and core, respectively. The energetics of the conduction and valence bands and the bandgaps of the ZnTe/CdSe NCs are accurately predicted. The photoluminescent experiments show that electron quenchers having a large energy difference between their reduction potential and the lowest conduction band edge of the ZnTe/CdSe nanocrystals can completely quench the luminescence. Electron acceptors having a reduction potential only slightly below the conduction band edge partially quench the photoluminescence of the nanocrystals. In this case, the extent of quenching depends upon the thickness of the shell and the energy difference. Despite the confinement of photoexcited holes in the core, the photoluminescence could be still quenched by adsorbed hole quenchers. The extent of hole quenching depends upon the core size, the shell thickness and the oxidation potential of the quenchers. Basically, an increase in the core size and the shell thickness may lead to a decrease in the extent of hole quenching. The work presented here is of great interest since it can be extended to understand the spectroscopic properties and photoluminescence quenching behaviors of other core/shell semiconductor NCs.

Asymmetrically strained quantum dots with non-fluctuating single-dot emission spectra and subthermal room-temperature linewidths

The application of colloidal semiconductor quantum dots as single-dot light sources still requires several challenges to be overcome. Recently, there has been considerable progress in suppressing intensity fluctuations (blinking) by encapsulating an emitting core in a thick protective shell. However, these nanostructures still show considerable fluctuations in both emission energy and linewidth. Here we demonstrate type-I core/shell heterostructures that overcome these deficiencies. They are made by combining wurtzite semiconductors with a large, directionally anisotropic lattice mismatch, which results in strong asymmetric compression of the emitting core. This modifies the structure of band-edge excitonic states and leads to accelerated radiative decay, reduced exciton-phonon interactions, and suppressed coupling to the fluctuating electrostatic environment. As a result, individual asymmetrically strained dots exhibit highly stable emission energy (<1 meV standard deviation) and a subthermal room-temperature linewidth (~20 meV), concurrent with nearly nonblinking behaviour, high emission quantum yields, and a widely tunable emission colour.

A colloidal heterostructured quantum dot sensitized carbon nanotube-TiO2 hybrid photoanode for high efficiency hydrogen generation

Solar-driven photoelectrochemical (PEC) hydrogen (H₂) generation is a promising approach to harvest solar energy for the production of a clean chemical fuel. However, the low photon-to-fuel conversion efficiency and long-term stability of PEC devices are major challenges to be addressed to enable large-scale commercialization. Here we report a simple, fast and cost-effective approach to fabricate high efficiency and stable PEC devices for H₂ generation, by fabricating a hybrid photoanode obtained by incorporating small amounts of multiwall carbon nanotubes (MWCNTs) into a TiO₂ mesoporous film and sensitizing with colloidal heterostructured CdSe/(CdSe_xS_1-x)₅/(CdS)₂ quantum dots (QDs). The latter were specially designed to accelerate the exciton separation through a band engineering approach. The PEC devices based on the TiO₂/QD-MWCNT (T/Q-M) hybrid photoanode with an optimized amount of MWCNTs (0.015 wt%) yield a saturated photocurrent density of 15.90 mA cm^-2 (at 1.0 V_RHE) under one sun illumination (AM 1.5G, 100 mW cm^-2), which is 40% higher than that of the reference device based on TiO₂/QD (T/Q) photoanodes. This is attributed to a synergistic effect of the promising optoelectronic properties of the colloidal heterostructured QDs and improved electron transport (reduced charge transfer resistance) within the TiO₂-MWCNT hybrid anodes enabled by the directional path of MWCNTs for the photo-injected electrons towards FTO. Furthermore, the PEC device based on the T/Q-M hybrid photoanode is more stable (∼19% loss of its initial photocurrent density) when compared with the T/Q photoanode (∼35% loss) after two hours of continuous one sun illumination. Our results provide fundamental insights and a different approach to improve the efficiency and long-term stability of PEC devices and represent an essential step towards the commercialization of this emerging solar-to-fuel conversion technology.

Counting growth factors in single cells with infrared quantum dots to measure discrete stimulation distributions

The distribution of single-cell properties across a population of cells can be measured using diverse tools, but no technology directly quantifies the biochemical stimulation events regulating these properties. Here we report digital counting of growth factors in single cells using fluorescent quantum dots and calibrated three-dimensional deconvolution microscopy (QDC-3DM) to reveal physiologically relevant cell stimulation distributions. We calibrate the fluorescence intensities of individual compact quantum dots labeled with epidermal growth factor (EGF) and demonstrate the necessity of near-infrared emission to overcome intrinsic cellular autofluoresence at the single-molecule level. When applied to human triple-negative breast cancer cells, we observe proportionality between stimulation and both receptor internalization and inhibitor response, reflecting stimulation heterogeneity contributions to intrinsic variability. We anticipate that QDC-3DM can be applied to analyze any peptidic ligand to reveal single-cell correlations between external stimulation and phenotypic variability, cell fate, and drug response.

Measuring growth factors in single cells at physiologically relevant stimulation doses is challenging. Here the authors use fluorescent quantum dots and calibrated three-dimensional deconvolution microscopy to digitally count growth factors in single cells and reveal stimulation distributions in cancer cells.

Giant-Shell CdSe/CdS Nanocrystals: Exciton Coupling to Shell Phonons Investigated by Resonant Raman Spectroscopy

The interaction between excitons and phonons in semiconductor nanocrystals plays a crucial role in the exciton energy spectrum and dynamics, and thus in their optical properties. We investigate the exciton-phonon coupling in giant-shell CdSe/CdS core-shell nanocrystals via resonant Raman spectroscopy. The Huang-Rhys parameter is evaluated by the intensity ratio of the longitudinal-optical (LO) phonon of CdS with its first multiscattering (2LO) replica. We used four different excitation wavelengths in the range from the onset of the CdS shell absorption to well above the CdS shell band edge to get insight into resonance effects of the CdS LO phonon with high-energy excitonic transitions. The isotropic spherical giant-shell nanocrystals show consistently stronger exciton-phonon coupling as compared to the anisotropic rod-shaped dot-in-rod (DiR) architecture, and the 2LO/LO intensity ratio decreases for excitation wavelengths approaching the CdS band edge. The strong exciton-phonon coupling in the spherical giant-shell nanocrystals can be related to the delocalization of the electronic wave functions. Furthermore, we observe the radial breathing modes of the GS nanocrystals and their overtones by ultralow frequency Raman spectroscopy with nonresonant excitation, using laser energies well below the band gap of the heteronanocrystals, and highlight the differences between higher-order optical and acoustic phonon modes.

Limiting the Spectral Diffusion of Nano-Scale Light Emitters using the Purcell effect in a Photonic-Confined Environment

Partial suppression of the spectral diffusion of quantum dot (QD) excitons tuned to resonance of a nano-photonic cavity is reported. The suppression is caused by the Purcell enhancement of the QD-exciton recombination rate, which alters the rate of charging of the solid-state environment by the QD itself. The effect can be used to spectrally-stabilize solid-state emitters of single photons and other non-classical states of light.

Engineering Efficient Photon Upconversion in Semiconductor Heterostructures

Photon upconversion is a photophysical process in which two low-energy photons are converted into one high-energy photon. Photon upconversion has broad appeal for a range of applications from biomedical imaging and targeted drug release to solar energy harvesting. Current upconversion nanosystems, including lanthanide-doped nanocrystals and triplet-triplet annihilation molecules, have achieved upconversion quantum yields on the order of 10-30%. However, the performance of these materials is hampered by inherently narrow absorption cross sections and fixed energy levels originating in atomic, ionic, or molecular states. Semiconductors, on the other hand, have inherently wide absorption cross sections. Moreover, recent advances enable the synthesis of colloidal semiconductor nanoparticles with complex heterostructures that can control band alignments and tune optical properties. We synthesize and characterize a three-component heterostructure that successfully upconverts photons under continuous-wave illumination and solar-relevant photon fluxes. The heterostructure is composed of two cadmium selenide quantum dots (QDs), an absorber and emitter, spatially separated by a cadmium sulfide nanorod (NR). We demonstrate that the principles of semiconductor heterostructure engineering can be applied to engineer improved upconversion efficiency. We first eliminate electron trap states near the surface of the absorbing QD and then tailor the band gap of the NR such that charge carriers are funneled to the emitting QD. When combined, these two changes result in a 100-fold improvement in photon upconversion performance.

Direct surface modification of semiconductor quantum dots with metal–organic frameworks

Robust surface protective materials for luminescent semiconductor quantum dots (QDs) are demonstrated by using metal–organic frameworks (MOFs) through a direct link between them.

Efficient Modeling of Optical Excitations of Colloidal Core-Shell Semiconductor Quantum Dots by Using Symmetrized Orbitals

An efficient method for the theoretical investigation of optical properties of semiconductor core-shell quantum dots (CSQDs) is introduced within the multiband k·p approach, which takes the advantage of the symmetry of the system. The heteroepitaxial strain and excitonic effect are included in the calculation of energy levels, envelope wave functions, exciton binding energy, and linear absorption coefficient. The adoption of symmetrized orbitals allows improvement of the computation time significantly. To avoid appearance of spurious solutions caused by imbalance of basis functions adopted, we consider an 8-band k·p model which is block-diagonalized into two conduction bands and six valence bands, that we call the 2 + 6-band model. The band nonparabolicity effect is modeled by an energy-dependent k·p term, such that the density of states obtained can mimic the actual density of states of a full-band model. The simulated absorption spectra of ZnTe/ZnSe CSQD are in good agreement with those observed experimentally, including the high rise of absorption at energies far above the absorption edge.

Shell-dependent blinking behavior and fluorescence dynamics of single ZnSe/CdS core/shell quantum dots

An understanding of blinking behavior and photodynamics is crucial for improving the optical properties of quantum dots (QDs). Here we report the emission blinking behavior and dynamical mechanisms of single ZnSe/CdS core/shell QDs with the shell thickness varying from 1 to 6 monolayers. We find that the emission blinking behavior can be efficiently suppressed in the single-exciton regime and that the photoluminescence (PL) quantum yields (QY) and the corresponding fraction-bright of ZnSe/CdS QDs can be optimized by regulating the shell thickness. Specifically, the PL QY reaches a maximum of 93% when the shell thickness is 4 monolayers. The intensity-resolved and time-resolved fluorescence dynamics of single QDs indicate that three exciton decay pathways via trion emission, band-edge emission and shallow surface trap-state emission contribute to the blinking behavior of ZnSe/CdS QDs. The competitive contribution ratios of these three decay components are responsible for the significant difference in emission properties of ZnSe/CdS QDs with different shell thicknesses. Our findings in this work demonstrate that an effective way to improve the quantum yields and fraction-bright of core/shell QDs is to enhance the band-edge emission while suppressing the trion emission and surface trap-state emission.

Deterministic Positioning of Colloidal Quantum Dots on Silicon Nitride Nanobeam Cavities

Engineering an array of precisely located cavity-coupled active media poses a major experimental challenge in the field of hybrid integrated photonics. We deterministically position solution-processed colloidal quantum dots (QDs) on high quality (Q)-factor silicon nitride nanobeam cavities and demonstrate light-matter coupling. By lithographically defining a window on top of an encapsulated cavity that is cladded in a polymer resist, and spin coating the QD solution, we can precisely control the placement of the QDs, which subsequently couple to the cavity. We show rudimentary control of the number of QDs coupled to the cavity by modifying the size of the window. Furthermore, we demonstrate Purcell enhancement and saturable photoluminescence in this QD-cavity platform. Finally, we deterministically position QDs on a photonic molecule and observe QD-coupled cavity supermodes. Our results pave the way for precisely controlling the number of QDs coupled to a cavity by engineering the window size, the QD dimension, and the solution chemistry and will allow advanced studies in cavity enhanced single photon emission, ultralow power nonlinear optics, and quantum many-body simulations with interacting photons.

CdSe/CdS Dot-in-Rods Nanocrystals Fast Blinking Dynamics

Analyzing the autocorrelation function of the fluorescence intensity, we demonstrate that these nanoemitters are characterized by a short value of the mean duration of bright periods (ten to a few hundreds of microseconds). The comparison of the results obtained for samples with different geometries shows that not only the shell thickness is crucial but also the shape of the dot-in-rods. Increasing the shell aspect ratio results in shorter bright periods suggesting that surface traps impact the stability of the fluorescence intensity.

Fundamental Properties in Colloidal Quantum Dots

A multidisciplinary approach for the production and characterization of colloidal quantum dots, which show great promise for implementation in modern optoelectronic applications, is described. The approach includes the design and formation of unique core/shell structures with alloy-composed layers between the core and the shell. Such structures eliminate interfacial defects and suppress the Auger process, thus reducing the known fluorescence blinking and endowing the quantum dots with robust chemical and spectral stability. The unique design enables the generation and sustained existence of single and multiple excitons with a defined spin-polarized emission recombination. The studies described herein implement the use of single-dot magneto-optical measurements and optically detected magnetic resonance spectroscopy, for direct identification of interfacial defects and for resolving exciton fine structure. The results are of paramount importance for a fundamental understanding of optical transitions in colloidal quantum dots, with an impact on appropriate materials design for practical applications.

Tailoring the interfacial structure of colloidal "giant" quantum dots for optoelectronic applications

Colloidal semiconductor quantum dots (QDs) are promising building blocks for the realization of future optoelectronic technologies, thanks to their size-tunable electronic and optical properties. Among various types of QDs, colloidal "giant" QDs (g-QDs, core/thick-shell) have been widely used in different applications, such as solar cells, light emitting devices, luminescent solar concentrators and photoelectrochemical (PEC) hydrogen production. However, g-QDs have a thick-shell which serves as a physical barrier for electron and hole transfer, leading to a slow charge transfer rate. In this work, we synthesized CdSe/CdSexS1-x/CdS core/shell/shell g-QDs with an intermediate CdSexS1-x alloyed layer. The presence of this interfacial layer largely improves the absorption of CdSe/CdS QDs, particularly in the 300-650 nm range. By engineering the interfacial layer, the holes can leak more into the CdS shell region compared to that of CdSe/CdS QDs. PEC devices based on alloyed g-QDs exhibit a 20% higher saturated photocurrent density (11 ± 0.5 mA cm-2) compared to CdSe/CdS QDs. In addition, after one-hour illumination (100 mW cm-2), the PEC cell based on alloyed g-QDs still exhibits a photocurrent density of 7.5 mA cm-2, maintaining 70% of its initial value. Such alloyed g-QDs are very promising for several emerging optoelectronic applications, where charge separation, transfer and transport play a critical role for the realization of high performance devices.

Highly stable photoelectrochemical cells for hydrogen production using a SnO2-TiO2/quantum dot heterostructured photoanode

Photoelectrochemical (PEC) water splitting implementing colloidal quantum dots (QDs) as sensitizers is a promising approach for hydrogen (H2) generation, due to the QD's size-tunable optical properties. However, the challenge of long-term stability of the QDs is still unresolved. Here, we introduce a highly stable QD-based PEC device for H2 generation using a photoanode based on a SnO2-TiO2 heterostructure, sensitized by CdSe/CdS core/thick-shell "giant" QDs. This hybrid photoanode architecture leads to an appreciable saturated photocurrent density of ∼4.7 mA cm-2, retaining an unprecedented ∼96% of its initial current density after two hours, and sustaining ∼93% after five hours of continuous irradiation under an AM 1.5G (100 mW cm-2) simulated solar spectrum. Transient photoluminescence (PL) measurements demonstrate that the heterostructured SnO2-TiO2 photoanode exhibits faster electron transfer compared with the bare TiO2 photoanode. The lower electron transfer rate in the TiO2 photoanode can be attributed to slow electron kinetics in the ultraviolet regime, revealed by ultrafast transient absorption spectroscopy. Graphene microplatelets were further introduced into the heterostructured photoanode, which boosted the photocurrent density to ∼5.6 mA cm-2. Our results demonstrate that the SnO2-TiO2 heterostructured photoanode holds significant potential for developing highly stable PEC cells.

Optoelectronic Properties in Near-Infrared Colloidal Heterostructured Pyramidal "Giant" Core/Shell Quantum Dots

Colloidal heterostructured quantum dots (QDs) are promising candidates for next-generation optoelectronic devices. In particular, "giant" core/shell QDs (g-QDs) can be engineered to exhibit outstanding optical properties and high chemical/photostability for the fabrication of high-performance optoelectronic devices. Here, the synthesis of heterostructured CuInSe x S2-x (CISeS)/CdSeS/CdS g-QDs with pyramidal shape by using a facile two-step method is reported. The CdSeS/CdS shell is demonstrated to have a pure zinc blend phase other than typical wurtzite phase. The as-obtained heterostructured g-QDs exhibit near-infrared photoluminescence (PL) emission (≈830 nm) and very long PL lifetime (in the microsecond range). The pyramidal g-QDs exhibit a quasi-type II band structure with spatial separation of electron-hole wave function, suggesting an efficient exciton extraction and transport, which is consistent with theoretical calculations. These heterostructured g-QDs are used as light harvesters to fabricate a photoelectrochemical cell, exhibiting a saturated photocurrent density as high as ≈5.5 mA cm-2 and good stability under 1 sun illumination (AM 1.5 G, 100 mW cm-2). These results are an important step toward using heterostructured pyramidal g-QDs for prospective applications in solar technologies.

Li and Mg Co-Doped Zinc Oxide Electron Transporting Layer for Highly Efficient Quantum Dot Light-Emitting Diodes

Zinc-oxide (ZnO) is widely used as an n-type electron transporting layer (ETL) for quantum dot (QD) light-emitting diode (QLED) because various metal doping can be possible and ZnO nanoparticle can be processed at low temperatures. We report here a Li- and Mg-doped ZnO, MLZO, which is used for ETL of highly efficient and long lifetime QLEDs. Co-doping, Mg and Li, in ZnO increases its band gap and electrical resistivity and thus can enhance charge balance in emission layer (EML). It is found also that the O-H concentration at the oxide surface decreases and exciton decay time of QDs on the metal oxide increases by co-doping in ZnO. The inverted green QLEDs with MLZO ETL exhibits the maximum current efficiency (CE_max) of 69.1 cd/A, power efficiency (PE_max) of 73.8 lm/W, and external quantum efficiency (EQE_max) of 18.4%. This is at least two times higher compared with the efficiencies of the QLEDs with Mg-doped ZnO ETL. The optimum Li and Mg concentrations are found to be 10% each. The deep-red, red, light-blue, and deep-blue QLEDs with MLZO ETLs exhibit the CE_max of 6.0, 22.3, 1.9, and 0.5 cd/A, respectively. The MLZO introduced here can be widely used as ETL of highly efficient QLEDs.

The Role of Liquid Ink Transport in the Direct Placement of Quantum Dot Emitters onto Sub-Micrometer Antennas by Dip-Pen Nanolithography

Dip-pen nanolithography (DPN) is used to precisely position core/thick-shell ("giant") quantum dots (gQDs; ≥10 nm in diameter) exclusively on top of silicon nanodisk antennas (≈500 nm diameter pillars with a height of ≈200 nm), resulting in periodic arrays of hybrid nanostructures and demonstrating a facile integration strategy toward next-generation quantum light sources. A three-step reading-inking-writing approach is employed, where atomic force microscopy (AFM) images of the pre-patterned substrate topography are used as maps to direct accurate placement of nanocrystals. The DPN "ink" comprises gQDs suspended in a non-aqueous carrier solvent, o-dichlorobenzene. Systematic analyses of factors influencing deposition rate for this non-conventional DPN ink are described for flat substrates and used to establish the conditions required to achieve small (sub-500 nm) feature sizes, namely: dwell time, ink-substrate contact angle and ink volume. Finally, it is shown that the rate of solvent transport controls the feature size in which gQDs are found on the substrate, but also that the number and consistency of nanocrystals deposited depends on the stability of the gQD suspension. Overall, the results lay the groundwork for expanded use of nanocrystal liquid inks and DPN for fabrication of multi-component nanostructures that are challenging to create using traditional lithographic techniques.

Photophysics of Thermally-Assisted Photobleaching in "Giant" Quantum Dots Revealed in Single Nanocrystals

Quantum dots (QDs) are steadily being implemented as down-conversion phosphors in market-ready display products to enhance color rendering, brightness, and energy efficiency. However, for adequate longevity, QDs must be encased in a protective barrier that separates them from ambient oxygen and humidity, and device architectures are designed to avoid significant heating of the QDs as well as direct contact between the QDs and the excitation source. In order to increase the utility of QDs in display technologies and to extend their usefulness to more demanding applications as, for example, alternative phosphors for solid-state lighting (SSL), QDs must retain their photoluminescence emission properties over extended periods of time under conditions of high temperature and high light flux. Doing so would simplify the fabrication costs for QD display technologies and enable QDs to be used as down-conversion materials in light-emitting diodes for SSL, where direct-on-chip configurations expose the emitters to temperatures approaching 100 °C and to photon fluxes from 0.1 W/mm² to potentially 10 W/mm². Here, we investigate the photobleaching processes of single QDs exposed to controlled temperature and photon flux. In particular, we investigate two types of room-temperature-stable core/thick-shell QDs, known as "giant" QDs for which shell growth is conducted using either a standard layer-by-layer technique or by a continuous injection method. We determine the mechanistic pathways responsible for thermally-assisted photodegradation, distinguishing effects of hot-carrier trapping and QD charging. The findings presented here will assist in the further development of advanced QD heterostructures for maximum device lifetime stability.

Ultrastable Quantum Dot Composite Films under Severe Environments

Semiconductor quantum dots (QDs) have attracted extensive attention because of their remarkable optical and electrical characteristics. However, the practical application of QDs and further the QD composite films have greatly been hindered mainly owing to their essential drawbacks of extreme unstability under oxygen and water environments. Herein, one simple method has been employed to enhance enormously the stability of Cd _xZn_{1- x}Se _yS_{1- y} QD composite films by a combination of Cd _xZn_{1- x}Se _yS_{1- y} QDs and poly(vinylidene) fluoride (PVDF), which is characteristic of closely arranged molecular chains and strong hydrogen bonds. There are many particular advantages in using QD/PVDF composite films such as easy processing, low cost, large-area fabrication, and especially extreme stability even in the boiling water for more than 240 min. By employing K₂SiF₆:Mn⁴⁺ as a red phosphor, a prototype white light-emitting diode (WLED) with color coordinates of (0.3307, 0.3387), T_c of 5568 K, and color gamut 112.1NTSC(1931)% at 20 mA has been fabricated, and there is little variation under different excitation currents, indicating that the QD/PVDF composite films fabricated by this simple blade-coating process make them ideal candidates for liquid-crystal display backlight utilization via assembling a WLED on a large scale owing to its ultrahigh stability under severe environments.

A White Light-Emitting Quantum Dot Complex for Single Particle Level Interaction with Dopamine Leading to Changes in Color and Blinking Profile

The interaction of the neurotransmitter dopamine is reported with a single particle white light-emitting (WLE) quantum dot complex (QDC). The QDC is composed of yellow emitting ZnO quantum dots (Qdots) and blue emitting Zn(MSA)₂ complex (MSA = N-methylsalicylaldimine) synthesized on their surfaces. Sensing is achieved by the combined changes in the visual luminescence color from white to blue, chromaticity color coordinates from (0.31, 0.33) to (0.24, 0.23) and the ratio of the exponents (α_on /α_off ) of on/off probability distribution (from 0.24 to 3.21) in the blinking statistics of WLE QDC. The selectivity of dopamine toward ZnO Qdots, present in WLE QDC, helps detect ≈13 dopamine molecules per Qdot. Additionally, the WLE QDC exhibits high sensitivity, with a limit of detection of 3.3 × 10^-9 m (in the linear range of 1-100 × 10^-9 m) and high selectivity in presence of interfering biological species. Moreover, the single particle on-off bilking statistics based detection strategy may provide an innovative way for ultrasensitive detection of analytes.

Two Mechanisms Determine Quantum Dot Blinking

Many potential applications of quantum dots (QDs) can only be realized once the luminescence from single nanocrystals (NCs) is understood. These applications include the development of quantum logic devices, single-photon sources, long-life LEDs, and single-molecule biolabels. At the single-nanocrystal level, random fluctuations in the QD photoluminescence occur, a phenomenon termed blinking. There are two competing models to explain this blinking: Auger recombination and surface trap induced recombination. Here we use lifetime scaling on core-shell chalcogenide NCs to demonstrate that both types of blinking occur in the same QDs. We prove that Auger-blinking can yield single-exponential on/off times in contrast to earlier work. The surface passivation strategy determines which blinking mechanism dominates. This study summarizes earlier studies on blinking mechanisms and provides some clues that stable single QDs can be engineered for optoelectronic applications.

Suppression of Auger Recombination in Nanocrystals via Ligand-Assisted Wave Function Engineering in Reciprocal Space

A limiting factor to the technological application of conventional semiconductor nanostructures is their fast Auger recombination time. Strategies to increase it have so far mostly focused on decreasing the electron-hole wave function overlap in real space through structural modifications involving either elongation or shell growth. Here we propose an alternative mechanism for Auger recombination suppression: a decrease in the overlap of electron and hole wave functions in reciprocal space.

Photon antibunching in a cluster of giant CdSe/CdS nanocrystals

When closely packed into a high-density film, semiconductor nanocrystals (NCs) can interact with each other to yield collective optical behaviours, which are normally difficult to characterize due to the ensemble average effect. Here we synthesized semiconductor NC clusters and performed single-particle spectroscopic measurements to probe the electronic couplings of several giant CdSe/CdS NCs contained in one cluster with nanometer-scale separations. Such a single cluster exhibits multiple emission peaks at the cryogenic temperature with nearly identical photoluminescence decay dynamics, suggesting that the Förster-type energy transfer does not occur among the composing NCs. Surprisingly, strong photon antibunching is still observed from a single cluster, which can be attributed to the Auger annihilation of photo-excited excitons from different NCs. The isolation of several nearby NCs interacting with the above novel mechanism has marked a solid progress towards a full understanding and an efficient control of the operation parameters in NC-based optoelectronic devices.

Colloidal Quantum Nanostructures: Emerging Materials for Display Applications

Colloidal semiconductor nanocrystals (SCNCs) or, more broadly, colloidal quantum nanostructures constitute outstanding model systems for investigating size and dimensionality effects. Their nanoscale dimensions lead to quantum confinement effects that enable tuning of their optical and electronic properties. Thus, emission color control with narrow photoluminescence spectra, wide absorbance spectra, and outstanding photostability, combined with their chemical processability through control of their surface chemistry leads to the emergence of SCNCs as outstanding materials for present and next-generation displays. In this Review, we present the fundamental chemical and physical properties of SCNCs, followed by a description of the advantages of different colloidal quantum nanostructures for display applications. The open challenges with respect to their optical activity are addressed. Both photoluminescent and electroluminescent display scenarios utilizing SCNCs are described.

Evaluating the potential of using quantum dots for monitoring electrical signals in neurons

Success in the projects aimed at providing an advanced understanding of the brain is directly predicated on making critical advances in nanotechnology. This Perspective addresses the unique interface of neuroscience and nanomaterials by considering the foundational problem of sensing neuron membrane voltage and offers a potential solution that may be facilitated by a prototypical nanomaterial. Despite substantial improvements, the visualization of instantaneous voltage changes within individual neurons, whether in cell culture or in vivo, at both the single-cell and network level at high speed remains complex and problematic. The unique properties of semiconductor quantum dots (QDs) have made them powerful fluorophores for bioimaging. What is not widely appreciated, however, is that QD photoluminescence is exquisitely sensitive to proximal electric fields. This property should be suitable for sensing voltage changes that occur in the active neuronal membrane. Here, we examine the potential role of QDs in addressing the important challenge of real-time optical voltage imaging.

Structure/Property Relations in "Giant" Semiconductor Nanocrystals: Opportunities in Photonics and Electronics

Semiconductor nanocrystals exhibit size-tunable absorption and emission ranging from the ultraviolet (UV) to the near-infrared (NIR) spectral range, high absorption coefficient, and high photoluminescence quantum yield. Effective surface passivation of these so-called quantum dots (QDs) may be achieved by growing a shell of another semiconductor material. The resulting core/shell QDs can be considered as a model system to study and optimize structure/property relations. A special case consists in growing thick shells (1.5 up to few tens of nanometers) to produce "giant" QDs (g-QDs). Tailoring the chemical composition and structure of CdSe/CdS and PbS/CdS g-QDs is a promising approach to widen the spectral separation of absorption and emission spectra (i.e., the Stokes shift), improve the isolation of photogenerated carriers from surface defects and enhance charge carrier lifetime and mobility. However, most stable systems are limited by a thick CdS shell, which strongly absorbs radiation below 500 nm, covering the UV and part of the visible range. Modification of the interfacial region between the core and shell of g-QDs or tuning their doping with narrow band gap semiconductors are effective approaches to circumvent this challenge. In addition, the synthesis of g-QDs composed of environmentally friendly elements (e.g., CuInSe₂/CuInS₂) represents an alternative to extend their absorption into the NIR range. Additionally, the band gap and band alignment of g-QDs can be engineered by proper selection of the constituents according to their band edge positions and by tuning their stoichiometry during wet chemical synthesis. In most cases, the quasi-type II localization regime of electrons and holes is achieved. In this type of g-QDs, electrons can leak into the shell region, while the holes remain confined within the core region. This electron-hole spatial distribution is advantageous for optoelectronic devices, resulting in efficient electron-hole separation while maintaining good stability. This Account provides an overview of emerging engineering strategies that can be adopted to optimize structure/property relations in colloidal g-QDs for efficient photon management or charge separation/transfer. In particular, we focus on our recent contributions to this rapidly expanding field of research. We summarize the design and synthesis of a variety of colloidal g-QDs with the aim of tuning the optical properties, such as absorption/emission in a wide region of the solar spectrum, which allows enlargement of their Stokes shift. We also describe the band alignment within these systems, charge carrier dynamics, and charge transfer from g-QDs into semiconducting oxides. We show how these tailored g-QDs may be used as active components in luminescent solar concentrators, photoelectrochemical cells for hydrogen generation, QD-sensitized solar cells and optical nanothermometers. In each case, we aim at providing insights on structure/property relationships and on how to optimize them toward improving device performance. Finally, we describe perspectives for future work, sketching new directions and opportunities in this field of research at the intersection between chemistry, physics, materials science and engineering.

Chemical Structure, Ensemble and Single-Particle Spectroscopy of Thick-Shell InP-ZnSe Quantum Dots

Thick-shell (>5 nm) InP-ZnSe colloidal quantum dots (QDs) grown by a continuous-injection shell growth process are reported. The growth of a thick crystalline shell is attributed to the high temperature of the growth process and the relatively low lattice mismatch between the InP core and ZnSe shell. In addition to a narrow ensemble photoluminescence (PL) line-width (∼40 nm), ensemble and single-particle emission dynamics measurements indicate that blinking and Auger recombination are reduced in these heterostructures. More specifically, high single-dot ON-times (>95%) were obtained for the core-shell QDs, and measured ensemble biexciton lifetimes, τ_2x ∼ 540 ps, represent a 7-fold increase compared to InP-ZnS QDs. Further, high-resolution energy dispersive X-ray (EDX) chemical maps directly show for the first time significant incorporation of indium into the shell of the InP-ZnSe QDs. Examination of the atomic structure of the thick-shell QDs by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) reveals structural defects in subpopulations of particles that may mitigate PL efficiencies (∼40% in ensemble), providing insight toward further synthetic refinement. These InP-ZnSe heterostructures represent progress toward fully cadmium-free QDs with superior photophysical properties important in biological labeling and other emission-based technologies.

Colloidal-Quantum-Dot Ring Lasers with Active Color Control

To improve the photophysical performance of colloidal quantum dots for laser applications, sophisticated core/shell geometries have been developed. Typically, a wider bandgap semiconductor is added as a shell to enhance the gain from the quantum-dot core. This shell is designed to electronically isolate the core, funnel excitons to it, and reduce nonradiative Auger recombination. However, the shell could also potentially provide a secondary source of gain, leading to further versatility in these materials. Here we develop high-quality quantum-dot ring lasers that not only exhibit lasing from both the core and the shell but also the ability to switch between them. We fabricate ring resonators (with quality factors up to ∼2500) consisting only of CdSe/CdS/ZnS core/shell/shell quantum dots using a simple template-stripping process. We then examine lasing as a function of the optical excitation power and ring radius. In resonators with quality factors >1000, excitons in the CdSe cores lead to red lasing with thresholds at ∼25 μJ/cm2. With increasing power, green lasing from the CdS shell emerges (>100 μJ/cm2) and then the red lasing begins to disappear (>250 μJ/cm2). We present a rate-equation model that can explain this color switching as a competition between exciton localization into the core and stimulated emission from excitons in the shell. Moreover, by lowering the quality factor of the cavity we can engineer the device to exhibit only green lasing. The mechanism demonstrated here provides a potential route toward color-switchable quantum-dot lasers.

The role of polyethylenimine in enhancing the efficiency of quantum dot light-emitting devices

Although the use of polyethylenimine (PEI) in quantum dot light-emitting devices (QDLEDs) has recently been found to improve efficiency, the mechanism behind this increase has been disputed in the literature. In this work, we conduct investigations to elucidate the role of PEI in enhancing QDLED efficiency. Spectroscopic studies of devices with a phosphorescent marking layer reveal that the PEI layer increases, rather than decreases, the generation of excitons within the hole transporting layer indicative of increased electron injection. Delayed electroluminescence measurements corroborate these findings as devices with a PEI interlayer exhibit a greater concentration of excess mobile and trapped electrons. We attribute the improvement in efficiency despite the ensuing increased charge imbalance within the devices to the passivation of exciton quenching at the ZnO/QD interface. The increase in efficiency predominantly occurs over low driving currents which is particularly attractive for the brightness targets of display applications. Furthermore, despite the increased charge imbalance, the PEI passivation layer appears to have little effect on QDLED stability. This shows that excess electrons and Auger quenching by unneutralized electrons are not detrimental to QDLED stability.

Towards understanding the unusual photoluminescence intensity variation of ultrasmall colloidal PbS quantum dots with the formation of a thin CdS shell

In this study, we report anomalous size-dependent photoluminescence (PL) intensity variation of PbS quantum dots (QDs) with the formation of a thin CdS shell via a microwave-assisted cation exchange approach. Thin shell formation has been established as an effective strategy for increasing the PL of QDs. Nonetheless, herein we observed an unusual PL decrease in ultrasmall QDs upon shell formation. We attempted to understand this abnormal phenomenon from the perspective of trap density variation and the probability of electrons and holes reaching surface defects. To this end, the quantum yield (QY) and PL lifetime (on the ns-μs time scales) of pristine PbS QDs and PbS/CdS core/shell QDs were measured and the radiative and non-radiative recombination rates were derived and compared. Moreover, transient absorption (TA) analysis (on the fs-ns time scale) was performed to better understand exciton dynamics at early times that lead to and affect longer time dynamics and optical properties such as PL. These experimental results, in conjunction with theoretical calculations of electron and hole wave functions, provide a complete picture of the photophysics governing the core/shell system. A model was proposed to explain the size-dependent optical and dynamic properties observed.

Insights into the Structural Complexity of Colloidal CdSe Nanocrystal Surfaces: Correlating the Efficiency of Nonradiative Excited-State Processes to Specific Defects

II-VI colloidal semiconductor nanocrystals (NCs), such as CdSe NCs, are often plagued by efficient nonradiative recombination processes that severely limit their use in energy-conversion schemes. While these processes are now well-known to occur at the surface, a full understanding of the exact nature of surface defects and of their role in deactivating the excited states of NCs has yet to be established, which is partly due to challenges associated with the direct probing of the complex and dynamic surface of colloidal NCs. Here, we report a detailed study of the surface of cadmium-rich zinc-blende CdSe NCs. The surfaces of these cadmium-rich species are characterized by the presence of cadmium carboxylate complexes (CdX₂) that act as Lewis acid (Z-type) ligands that passivate undercoordinated selenide surface species. The systematic displacement of CdX₂ from the surface by N,N,N',N'-tetramethylethylene-1,2-diamine (TMEDA) has been studied using a combination of ¹H NMR and photoluminescence spectroscopies. We demonstrate the existence of two independent surface sites that differ strikingly in the binding affinity for CdX₂ and that are under dynamic equilibrium with each other. A model involving coupled dual equilibria allows a full characterization of the thermodynamics of surface binding (free energy, as well as enthalpic and entropic terms), showing that entropic contributions are responsible for the difference between the two surface sites. Importantly, we demonstrate that cadmium vacancies only lead to important photoluminescence quenching when created on one of the two sites, allowing a complete picture of the surface composition to be drawn where each site is assigned to specific NC facet locale, with CdX₂ binding affinity and nonradiative recombination efficiencies that differ by up to two orders of magnitude.

Electron and Hole g-Factors and Spin Dynamics of Negatively Charged Excitons in CdSe/CdS Colloidal Nanoplatelets with Thick Shells

We address spin properties and spin dynamics of carriers and charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells. Magneto-optical studies are performed by time-resolved and polarization-resolved photoluminescence, spin-flip Raman scattering and picosecond pump-probe Faraday rotation in magnetic fields up to 30 T. We show that at low temperatures the nanoplatelets are negatively charged so that their photoluminescence is dominated by radiative recombination of negatively charged excitons (trions). Electron g-factor of 1.68 is measured, and heavy-hole g-factor varying with increasing magnetic field from -0.4 to -0.7 is evaluated. Hole g-factors for two-dimensional structures are calculated for various hole confining potentials for cubic- and wurtzite lattice in CdSe core. These calculations are extended for various quantum dots and nanoplatelets based on II-VI semiconductors. We developed a magneto-optical technique for the quantitative evaluation of the nanoplatelets orientation in ensemble.

Performance Limits of Luminescent Solar Concentrators Tested with Seed/Quantum-Well Quantum Dots in a Selective-Reflector-Based Optical Cavity

Luminescent solar concentrators (LSCs) can serve as large-area sunlight collectors for photovoltaic devices. An important LSC characteristic is a concentration factor (C), which is defined as the ratio of the output and the input photon flux densities. This parameter can be also thought of as an effective enlargement factor of a solar cell active area. On the basis of thermodynamic considerations, the C-factor can reach extremely high values that exceed those accessible with traditional concentrating optics. In reality, however, the best reported values of C are around 30. Here we demonstrate that using a new type of high-emissivity quantum dots (QDs) incorporated into a specially designed cavity, we are able to achieve the C of ∼62 for spectrally integrated emission and ∼120 for the red portion of the photoluminescence spectrum. The key feature of these QDs is a seed/quantum-well/thick-shell design, which allows for obtaining a high emission quantum yield (>95%) simultaneously with a large LSC quality factor (Q_LSC of ∼100) defined as the ratio of absorption coefficients at the wavelengths of incident and reemitted light. By incorporating the QDs into a specially designed cavity equipped with a top selective reflector (a Bragg mirror or a thin silver film), we are able to effectively recycle reemitted light achieving light trapping coefficients of ∼85%. The observed performance of these devices is in remarkable agreement with analytical modeling, which allows us to project that the applied approach should allow one to boost the spectrally integrated concentration factors to more than 100 by further improving light trapping and/or increasing Q_LSC.

Synthesis of tailor-made colloidal semiconductor heterostructures

This feature article provides an account of the various bottom-up and top-down methods that have been developed to prepare colloidal heterostructures and highlights the benefits of a seeded assembly approach for greater control and customizability.

Harnessing the properties of colloidal quantum dots in luminescent solar concentrators

This review summarizes the recent progress, challenges and perspectives of luminescent solar concentrators based on colloidal quantum dots via harnessing their properties.

Nearly suppressed photoluminescence blinking of small-sized, blue–green–orange–red emitting single CdSe-based core/gradient alloy shell/shell quantum dots: correlation between truncation time and photoluminescence quantum yield

Nearly suppressed PL blinking of small sized CdSe based CGASS QDs.

Near-complete photoluminescence retention and improved stability of InP quantum dots after silica embedding for their application to on-chip-packaged light-emitting diodes

Silica is the most commonly used oxide encapsulant for passivating fluorescent quantum dots (QDs) against degradable conditions. Such a silica encapsulation has been conventionally implemented via a Stöber or reverse microemulsion process, mostly targeting CdSe-based QDs to date. However, both routes encounter a critical issue of considerable loss in photoluminescence (PL) quantum yield (QY) compared to pristine QDs after silica growth. In this work, we explore the embedment of multishelled InP/ZnSeS/ZnS QDs, whose stability is quite inferior to CdSe counterparts, in a silica matrix by means of a tetramethyl orthosilicate-based, waterless, catalyst-free synthesis. It is revealed that the original QY (80%) of QDs is nearly completely retained in the course of the present silica embedding reaction. The resulting QD–silica composites are then placed in degradable conditions such UV irradiation, high temperature/high humidity, and operation of an on-chip-packaged light-emitting diode (LED) to attest to the efficacy of silica passivation on QD stability. Particularly, the promising results with regard to device efficiency and stability of the on-chip-packaged QD-LED firmly suggest the effectiveness of the present silica embedding strategy in not only maximally retaining QY of QDs but effectively passivating QDs, paving the way for the realization of a highly efficient, robust QD-LED platform.

Silica embedding strategy enabling a nearly full PL retention of the original QY of InP QDs is proposed for the realization of a highly efficient, robust QD-LED platform.