Broadband transparent optical phase change materials for high-performance nonvolatile photonics

Phase change material enabled 2 × 2 silicon nonvolatile optical switch

Recently, large-scale photonic integrated circuits have seen rapid development. Optical switches are the elementary units used to realize optical routers and processors. However, the high static power and large footprint of silicon electro-optic and thermo-optic switches are becoming an obstacle for further scaling and high-density integration. In this Letter, we demonstrate a 2×2 nonvolatile silicon Mach-Zehnder optical switch enabled by low-loss phase change material Sb₂S₃. Changing the phase state of Sb₂S₃ can switch the optical transmission between the bar and cross paths. As no static power is required to maintain the phase state, it can find promising applications in optical switch matrices and reconfigurable optical circuits.

Materials for emergent silicon-integrated optical computing

Progress in computing architectures is approaching a paradigm shift: traditional computing based on digital complementary metal-oxide semiconductor technology is nearing physical limits in terms of miniaturization, speed, and, especially, power consumption. Consequently, alternative approaches are under investigation. One of the most promising is based on a "brain-like" or neuromorphic computation scheme. Another approach is quantum computing using photons. Both of these approaches can be realized using silicon photonics, and at the heart of both technologies is an efficient, ultra-low power broad band optical modulator. As silicon modulators suffer from relatively high power consumption, materials other than silicon itself have to be considered for the modulator. In this Perspective, we present our view on such materials. We focus on oxides showing a strong linear electro-optic effect that can also be integrated with Si, thus capitalizing on new materials to enable the devices and circuit architectures that exploit shifting computational machine learning paradigms, while leveraging current manufacturing infrastructure. This is expected to result in a new generation of computers that consume less power and possess a larger bandwidth.

Three-Dimensional Au/Ag Nanoparticle/Crossed Carbon Nanotube SERS Substrate for the Detection of Mixed Toxic Molecules

Research on engineering "hotspots" in the field of surface-enhanced Raman scattering (SERS) is at the forefront of contributing to the best sensing indicators. Currently, there is still an urgent need to design a high-strength and large-scale electric field distribution method in order to obtain an ideal SERS sensor. Here, we designed a three-dimensional (3D) Au/Ag nanoparticle (NP)/crossed carbon nanotube film SERS substrate. The proposed structure formed by the simple preparation process can perfectly coordinate the interaction between the SERS substrates, lasers, and molecules. The denser "hotspots" can be induced and then distributed in holes enclosed by Au/AgNPs and the gaps between them. This process was verified by numerical simulations. The experimental results show that the proposed SERS substrate possesses an excellent sensitivity of 10^-12 M (rhodamine 6G (R6G)), an enhancement factor of 1.60 × 10⁹, and a good signal reproducibility (the relative standard deviation is ~6.03%). We further use a Au/AgNP/crossed CNT substrate to detect complex solutions composed of toxic molecules, which shows that our proposed SERS substrate has a wide range of application potentials, especially in food safety.

Switchable imaging between edge-enhanced and bright-field based on a phase-change metasurface

Edge-enhanced imaging and bright-field imaging extract different morphological information from an object, and hence a system capable of switching dynamically between them is of vital importance for various applications. By incorporating an elaborately designed meta-device with a 4f imaging system, we demonstrate dynamic switching between 2D edge-enhanced imaging and bright-field imaging. The dynamically switchable characteristic results from the composed phase-change material meta-atoms, which are optimized to provide two independent phase profiles in amorphous and crystalline states. For dynamically switchable imaging, the meta-device functions as either a high-pass or a low-pass filter in the Fourier frequency spectrum, relying on its phase state. In addition, the dynamically switchable imaging is polarization independent. The proposed meta-device owns ultra-thin architecture and polarization-insensitive dynamically switchable functionality, holding potential applications in integrated biomedical imaging and defect detection.

All-inorganic perovskite quantum dot light-emitting memories

Field-induced ionic motions in all-inorganic CsPbBr₃ perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr₃/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-emitting electrochemical cell (LEC), or vice versa, by simply modulating its bias polarity. We then realize for the first time a fast, all-perovskite light-emitting memory (LEM) operating at 5 kHz by pairing such two identical devices in series, in which one functions as an RRAM to electrically read the encoded data while the other simultaneously as an LEC for a parallel, non-contact optical reading. We further show that the digital status of the LEM can be perceived in real time from its emission color. Our work opens up a completely new horizon for more advanced all-inorganic perovskite optoelectronic technologies.

Electric field induced ion migration is a well-known phenomenon in perovskite, but the consequences are notorious, and thus needs to be prevented. Here, on the other hand, the authors cleverly manipulate this event for realising resistive random-access memory and light-emitting electrochemical cell in one device based on CsPbBr₃ quantum dots.

Multispectral Graphene-Based Electro-Optical Surfaces with Reversible Tunability from Visible to Microwave Wavelengths

Optical materials with colour-changing abilities have been explored for display devices¹, smart windows^2,3, or modulation of visual appearance^4-6. The efficiency of these materials, however, has strong wavelength dependence, which limits their functionality to a specific spectral range. Here, we report graphene-based electro-optical devices with unprecedented optical tunability covering the entire electromagnetic spectrum from the visible to microwave. We achieve this non-volatile and reversible tunability by electro-intercalation of lithium into graphene layers in an optically accessible device structure. This unique colour-changing capability, together with area-selective intercalation, inspires fabrication of new multispectral devices, including display devices and electro-optical camouflage coating. We anticipate that these results provide realistic approaches for programmable smart optical surfaces with a potential utility in many scientific and engineering fields such as active plasmonics and adaptive thermal management.

Nonvolatile Optically Reconfigurable Radiative Metasurface with Visible Tunability for Anticounterfeiting

Control of thermal emission underpins fundamental science, as it is related to both heat and infrared electromagnetic wave transport. However, realizing nonvolatile reconfigurable thermal emission is challenging due to the inherent complexity or limitation in conventional radiative materials or structures. Here, we experimentally demonstrate a nonvolatile optically reconfigurable mid-infrared coding radiative metasurface. By applying laser pulses, infrared emissive patterns are directly encoded into an ultrathin (∼25 nm) Ge₂Sb₂Te₅ layer integrated into a planar optical cavity with the optically crystallized Ge₂Sb₂Te₅ spots, and the peak spectral emissivity is repeatedly switched between low (∼0.1) and high (∼0.7) values. In addition, the visible scattering patterns are independently modulated with submicron-sized bumps generated by high-power laser pulses. An anticounterfeiting label is demonstrated with spatially different infrared emission and visible light scattering information encoded. This approach constitutes a new route toward thermal emission control and has broad applications in encryption, camouflage, and so on.

ITO-based microheaters for reversible multi-stage switching of phase-change materials: towards miniaturized beyond-binary reconfigurable integrated photonics

Inducing a large refractive-index change is the holy grail of reconfigurable photonic structures, a goal that has long been the driving force behind the discovery of new optical material platforms. Recently, the unprecedentedly large refractive-index contrast between the amorphous and crystalline states of Ge-Sb-Te (GST)-based phase-change materials (PCMs) has attracted tremendous attention for reconfigurable integrated nanophotonics. Here, we introduce a microheater platform that employs optically transparent and electrically conductive indium-tin-oxide (ITO) bridges for the fast and reversible electrical switching of the GST phase between crystalline and amorphous states. By the proper assignment of electrical pulses applied to the ITO microheater, we show that our platform allows for the registration of virtually any intermediate crystalline state into the GST film integrated on the top of the designed microheaters. More importantly, we demonstrate the full reversibility of the GST phase between amorphous and crystalline states. To show the feasibility of using this hybrid GST/ITO platform for miniaturized integrated nanophotonic structures, we integrate our designed microheaters into the arms of a Mach-Zehnder interferometer to realize electrically reconfigurable optical phase shifters with orders of magnitude smaller footprints compared to existing integrated photonic architectures. We show that the phase of optical signals can be gradually shifted in multiple intermediate states using a structure that can potentially be smaller than a single wavelength. We believe that our study showcases the possibility of forming a whole new class of miniaturized reconfigurable integrated nanophotonics using beyond-binary reconfiguration of optical functionalities in hybrid PCM-photonic devices.

Stimuli-Responsive Phase Change Materials: Optical and Optoelectronic Applications

Stimuli-responsive materials offer a large variety of possibilities in fabrication of solid- state devices. Phase change materials (PCMs) undergo rapid and drastic changes of their optical properties upon switching from one crystallographic phase to another one. This peculiarity makes PCMs ideal candidates for a number of applications including sensors, active displays, photonic volatile and non-volatile memories for information storage and computer science and optoelectronic devices. This review analyzes different examples of PCMs, in particular germanium–antimonium tellurides and vanadium dioxide (VO₂) and their applications in the above-mentioned fields, with a detailed discussion on potential, limitations and challenges.

Loss-induced switching between electromagnetically induced transparency and critical coupling in a chalcogenide waveguide

Optical loss is generally perceived to be an adverse effect in integrated optics. Herein, in contrast, we propose a mechanism to harness the loss in a coupled ${\rm {high-}}{\! Q}$ resonators system to realize on-chip electromagnetically induced transparency (EIT). The increasing loss of one of the coupled resonators results in a difference in ${Q}$ factor, leading to EIT generation. This optical loss-induced EIT is studied analytically using the coupled-mode theory and demonstrated experimentally in chalcogenide coupled microring resonators. By taking advantage of the chalcogenide phase change materials that feature exceptional optical property contrasts, we further demonstrate the loss-induced mechanism to realize fast and nonvolatile responses between the EIT state and the critical coupling state in a monolithically integrated chip. Our results provide a new perspective to harvest the negative loss effect of coupled resonators for tunable photonic devices, which might shed new light on the design ideology for on-chip slow-light optical components.

Highly Efficient Thermal Energy Storage Using a Hybrid Hypercrosslinked Polymer*

In this work, an organic/inorganic hybrid polymer containing siloxyl functional groups was synthesized and applied to encapsulate phase change materials (PCMs). Owing to the mild conditions of the hypercrosslinking reaction, which only requires the addition of a catalytic amount of aqueous alkaline solution, both organic and inorganic PCMs are tolerated. It is noteworthy that the initial homogeneous state of the reaction mixture allowed the ultimate encapsulation rate of the PCMs and the uniform blending of the third nano-additives with the aim of thermal conductivity enhancement. Further study reveals that the presence of this hybrid hydrophobic polymer in a phase change composite endows the latter with a unique self-cleaning property. This novel PCM encapsulation protocol is suitable for nanoparticles including carbon-based nanomaterials, metal oxide nanoparticles, and inorganic oxide nanoparticles. A thermal conductivity enhancement of 600 % was achieved along with 93.7 % light-to-thermal conversion efficiency with a latent heat of 180 J g^-1 without leakage.

On-Chip Integrated Photonic Devices Based on Phase Change Materials

Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.

Nonvolatile programmable silicon photonics using an ultralow-loss Sb2Se3 phase change material

The next generation of silicon-based photonic processors and neural and quantum networks need to be adaptable, reconfigurable, and programmable. Phase change technology offers proven nonvolatile electronic programmability; however, the materials used to date have shown prohibitively high optical losses, which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb2Se3 for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb2Se3 facilitates an unprecedented optical phase control exceeding 10π radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a previously unexplored conceptual approach with a footprint orders of magnitude smaller than state-of-the-art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip.

Electrically reconfigurable non-volatile metasurface using low-loss optical phase-change material

Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability and functionality compared to their traditional bulk counterparts. Optical phase-change materials (PCMs) offer an appealing material solution for active metasurface devices with their large index contrast and non-volatile switching characteristics. Here we report a large-scale, electrically reconfigurable non-volatile metasurface platform based on optical PCMs. The optical PCM alloy used in the devices, Ge₂Sb₂Se₄Te (GSST), uniquely combines giant non-volatile index modulation capability, broadband low optical loss and a large reversible switching volume, enabling notably enhanced light-matter interactions within the active optical PCM medium. Capitalizing on these favourable attributes, we demonstrated quasi-continuously tuneable active metasurfaces with record half-octave spectral tuning range and large optical contrast of over 400%. We further prototyped a polarization-insensitive phase-gradient metasurface to realize dynamic optical beam steering.

Electrically Tunable All-PCM Visible Plasmonics

The realization of electrically tunable plasmonic resonances in the ultraviolet (UV) to visible spectral band is particularly important for active nanophotonic device applications. However, the plasmonic resonances in the UV to visible wavelength range cannot be tuned due to the lack of tunable plasmonic materials. Here, we experimentally demonstrate tunable plasmonic resonances at visible wavelengths using a chalcogenide semiconductor alloy such as antimony telluride (Sb₂Te₃), by switching the structural phase of Sb₂Te₃ from amorphous to crystalline. We demonstrate the excitation of a propagating surface plasmon with a high plasmonic figure of merit in both amorphous and crystalline phases of Sb₂Te₃ thin films. We show polarization-dependent and -independent plasmonic resonances by fabricating one and two-dimensional periodic nanostructures in Sb₂Te₃ thin films, respectively. Moreover, we demonstrate electrically tunable plasmonic resonances using a microheater integrated with the Sb₂Te₃/Si device. The developed electrically tunable Sb₂Te₃-based plasmonic devices could find applications in the development of active color filters.

Advances in Photonic Devices Based on Optical Phase-Change Materials

Phase-change materials (PCMs) are important photonic materials that have the advantages of a rapid and reversible phase change, a great difference in the optical properties between the crystalline and amorphous states, scalability, and nonvolatility. With the constant development in the PCM platform and integration of multiple material platforms, more and more reconfigurable photonic devices and their dynamic regulation have been theoretically proposed and experimentally demonstrated, showing the great potential of PCMs in integrated photonic chips. Here, we review the recent developments in PCMs and discuss their potential for photonic devices. A universal overview of the mechanism of the phase transition and models of PCMs is presented. PCMs have injected new life into on-chip photonic integrated circuits, which generally contain an optical switch, an optical logical gate, and an optical modulator. Photonic neural networks based on PCMs are another interesting application of PCMs. Finally, the future development prospects and problems that need to be solved are discussed. PCMs are likely to have wide applications in future intelligent photonic systems.

Topological Rainbow Concentrator Based on Synthetic Dimension

Synthetic dimension provides a new platform for realizing topological photonic devices. Here, we propose a method to realize a rainbow concentrator of topological photonic states based on the synthetic dimension concept. The synthetic dimension is constructed using a translational degree of freedom of the nanostructures inside the unit cell of a two-dimensional photonic crystal. The translational deformation induces a nontrivial topology in the synthetic dimension, which gives rise to robust interface states at different frequencies. The topological rainbow can trap states with different frequencies, controlled by tuning the spatial modulation of interface state group velocities. The operation frequency as well as the bandwidth of the topological rainbow can be easily tuned by controlling the band gap of the photonic crystal. The topological principle can be applied to photonic crystals of any symmetry and arbitrary material composition, as long as a complete band gap exists. This Letter provides a new and general scheme for the realization of a topological rainbow concentrator and will be useful for the development of topological photonic devices.

Multifunctional metalens generation using bilayer all-dielectric metasurfaces

Optical metasurfaces exhibit unprecedented ability in light field control due to their ability to locally change the phase, amplitude, and polarization of transmitted or reflected light. We propose a multifunctional metalens with dual working modes based on bilayer geometric phase elements consisting of low-loss phase change materials (Sb₂Se₃) and amorphous silicon (a-Si). In transmission mode, by changing the crystalline state of the Sb₂Se₃ scatterer, a bifocal metalens with an arbitrary intensity ratio at the telecommunication C-band is realized, and the total focusing efficiency of the bifocal metalens is as high as 78%. Also, at the resonance wavelength of the amorphous Sb₂Se₃ scatterer, the scatterer can be regarded as a half-wave plate in reflection mode. The multifunctional metalens can reversely converge incident light into a focal point with a focusing efficiency of up to 30%. The high focusing efficiency, dynamic reconfigurability, and dual working modes of the multifunctional metalens contribute to polarization state detection, optical imaging, and optical data storage. In addition, the bilayer geometric phase elements can be easily extended to multilayer, which significantly improves the capability of manipulating the incident light field.

Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration

In recent decades, metasurfaces have emerged as an exotic and appealing group of nanophotonic devices for versatile wave regulation with deep subwavelength thickness facilitating compact integration. However, the ability to dynamically control the wave-matter interaction with external stimulus is highly desirable especially in such scenarios as integrated photonics and optoelectronics, since their performance in amplitude and phase control settle down once manufactured. Currently, available routes to construct active photonic devices include micro-electromechanical system (MEMS), semiconductors, liquid crystal, and phase change materials (PCMs)-integrated hybrid devices, etc. For the sake of compact integration and good compatibility with the mainstream complementary metal oxide semiconductor (CMOS) process for nanofabrication and device integration, the PCMs-based scheme stands out as a viable and promising candidate. Therefore, this review focuses on recent progresses on phase change metasurfaces with dynamic wave control (amplitude and phase or wavefront), and especially outlines those with continuous or quasi-continuous atoms in favor of optoelectronic integration.

Materials Screening for Disorder-Controlled Chalcogenide Crystals for Phase-Change Memory Applications

Tailoring the degree of disorder in chalcogenide phase-change materials (PCMs) plays an essential role in nonvolatile memory devices and neuro-inspired computing. Upon rapid crystallization from the amorphous phase, the flagship Ge-Sb-Te PCMs form metastable rocksalt-like structures with an unconventionally high concentration of vacancies, which results in disordered crystals exhibiting Anderson-insulating transport behavior. Here, ab initio simulations and transport experiments are combined to extend these concepts to the parent compound of Ge-Sb-Te alloys, viz., binary Sb2 Te3 , in the metastable rocksalt-type modification. Then a systematic computational screening over a wide range of homologous, binary and ternary chalcogenides, elucidating the critical factors that affect the stability of the rocksalt structure is carried out. The findings vastly expand the family of disorder-controlled main-group chalcogenides toward many more compositions with a tunable bandgap size for demanding phase-change applications, as well as a varying strength of spin-orbit interaction for the exploration of potential topological Anderson insulators.

Phase change material-based nano-cavity as an efficient optical modulator

Structural phase transition induced by temperature or voltage in phase change materials has been used for many tunable photonic applications. Exploiting reversible and sub-ns fast switching in antimony trisulfide (Sb₂S₃) from amorphous (Amp) to crystalline (Cry), we introduced a reflection modulator based on metal-dielectric-metal structure. The proposed design exhibits tunable, perfect, and multi-band absorption from visible to the near-infrared region. The reflection response of the system shows >99% absorption of light at normal incidence. The maximum achievable modulation efficiency with a narrow line width is ∼98%. Interestingly, the designed cavity supports critical resonance in an ultrathin (∼λ/15) Sb₂S₃ film with perfect, broadband, and tunable absorption. Finally, we proposed a novel hybrid cavity design formed of Cry and Amp Sb₂S₃ thin films side-by-side to realize an optical modulator via relative motion between the incident light beam and cavity. The proposed lithographic free structure can be also used for filtering, optical switching, ultrathin photo-detection, solar energy harvesting, and other energy applications.

Reconfigurable all-dielectric metalens with diffraction-limited performance

Active metasurfaces, whose optical properties can be modulated post-fabrication, have emerged as an intensively explored field in recent years. The efforts to date, however, still face major performance limitations in tuning range, optical quality, and efficiency, especially for non-mechanical actuation mechanisms. In this paper, we introduce an active metasurface platform combining phase tuning in the full 2π range and diffraction-limited performance using an all-dielectric, low-loss architecture based on optical phase change materials (O-PCMs). We present a generic design principle enabling binary switching of metasurfaces between arbitrary phase profiles and propose a new figure-of-merit (FOM) tailored for reconfigurable meta-optics. We implement the approach to realize a high-performance varifocal metalens operating at 5.2 μm wavelength. The reconfigurable metalens features a record large switching contrast ratio of 29.5 dB. We further validate aberration-free and multi-depth imaging using the metalens, which represents a key experimental demonstration of a non-mechanical tunable metalens with diffraction-limited performance.

Transparent TiO2/Cu/TiO2 Multilayer for Electrothermal Application

Highly transparent indium-free multilayers of TiO₂/Cu/TiO₂ were obtained by means of annealing. The effects of Cu thickness and annealing temperature on the electrical and optical properties were investigated. The critical thickness of Cu mid-layer with optimal electrical and optical properties was 10 nm, with the figure of merit reaching as high as 5 × 10⁻³ Ω⁻¹. Partial crystallization of the TiO₂ layer enhanced the electrical and optical properties upon annealing. Electrothermal experiments showed that temperatures of more than 100 °C can be reached at a heating rate of 2 °C/s without any damage to the multilayers. The experimental results indicate that reliable transparent TiO₂/Cu/TiO₂ multilayers can be used for electrothermal application.

Dynamic Hybrid Metasurfaces

Efficient hybrid plasmonic-photonic metasurfaces that simultaneously take advantage of the potential of both pure metallic and all-dielectric nanoantennas are identified as an emerging technology in flat optics. Nevertheless, postfabrication tunable hybrid metasurfaces are still elusive. Here, we present a reconfigurable hybrid metasurface platform by incorporating the phase-change material Ge₂Sb₂Te₅ (GST) into metal-dielectric meta-atoms for active and nonvolatile tuning of properties of light. We systematically design a reduced-dimension meta-atom, which selectively controls the hybrid plasmonic-photonic resonances of the metasurface via the dynamic change of optical constants of GST without compromising the scattering efficiency. As a proof-of-concept, we experimentally demonstrate two tunable metasurfaces that control the amplitude (with relative modulation depth as high as ≈80%) or phase (with tunability >230°) of incident light promising for high-contrast optical switching and efficient anomalous to specular beam deflection, respectively. Our findings further substantiate dynamic hybrid metasurfaces as compelling candidates for next-generation reprogrammable meta-optics.

Comparison of the phase change process in a GST-loaded silicon waveguide and MMI

In the past decades, silicon photonic integrated circuits (PICs) have been considered a promising approach to solve the bandwidth bottleneck in optical communications and interconnections. Despite the rapid advances, large-scale PICs still face a series of technical challenges, such as large footprint, high power consumption, and lack of optical memory, resulting from the active tuning methods used to control the optical waves. These challenges can be partially addressed by combining chalcogenide phase change materials (PCMs) such as Ge₂Sb₂Te_-5 (GST) with silicon photonics, especially applicable in reconfigurable optical circuit applications due to the nonvolatile nature of the GST. We systematically investigate the phase change process induced by optical and electrical pulses in GST-loaded silicon waveguide and multimode interferometer. Using optical pulse excitation to amorphize GST has a clear advantage in terms of operation speed and energy efficiency, while electrical pulse excitation is more suitable for large-scale integration because it does not require complex optical routing. This study helps us better understand the phase change process and push forward the further development of the Si-GST hybrid photonic integration platform, bringing in new potential applications.

Programmable phase-change metasurfaces on waveguides for multimode photonic convolutional neural network

Neuromorphic photonics has recently emerged as a promising hardware accelerator, with significant potential speed and energy advantages over digital electronics for machine learning algorithms, such as neural networks of various types. Integrated photonic networks are particularly powerful in performing analog computing of matrix-vector multiplication (MVM) as they afford unparalleled speed and bandwidth density for data transmission. Incorporating nonvolatile phase-change materials in integrated photonic devices enables indispensable programming and in-memory computing capabilities for on-chip optical computing. Here, we demonstrate a multimode photonic computing core consisting of an array of programable mode converters based on on-waveguide metasurfaces made of phase-change materials. The programmable converters utilize the refractive index change of the phase-change material Ge₂Sb₂Te₅ during phase transition to control the waveguide spatial modes with a very high precision of up to 64 levels in modal contrast. This contrast is used to represent the matrix elements, with 6-bit resolution and both positive and negative values, to perform MVM computation in neural network algorithms. We demonstrate a prototypical optical convolutional neural network that can perform image processing and recognition tasks with high accuracy. With a broad operation bandwidth and a compact device footprint, the demonstrated multimode photonic core is promising toward large-scale photonic neural networks with ultrahigh computation throughputs.

Antimony thin films demonstrate programmable optical nonlinearity

The use of metals of nanometer dimensions to enhance and manipulate light-matter interactions for emerging plasmonics-enabled nanophotonic and optoelectronic applications is an interesting yet not highly explored area of research beyond plasmonics. Even more importantly, the concept of an active metal that can undergo an optical nonvolatile transition has not been explored. Here, we demonstrate that antimony (Sb), a pure metal, is optically distinguishable between two programmable states as nanoscale thin films. We show that these states, corresponding to the crystalline and amorphous phases of the metal, are stable at room temperature. Crucially from an application standpoint, we demonstrate both its optoelectronic modulation capabilities and switching speed using single subpicosecond pulses. The simplicity of depositing a single metal portends its potential for use in any optoelectronic application where metallic conductors with an actively tunable state are important.

Reconfigurable dielectric metasurface for active wavefront modulation based on a phase-change material metamolecule design

Metasurfaces, the promising artificial micro-nano structures with the ability to manipulate the wavefront of light, have been widely studied and reported in recent years. However, dynamic control of the wavefront using dielectric metasurfaces remains a great challenge. Here, unlike the previously reported reconfigurable metasurfaces that offer only binary functions or limited switchable states, we propose and numerically demonstrate an active dielectric metasurface with the metamolecule unit-cell design that enables full-range phase or amplitude tuning in the telecommunications band using the phase-change material Ge₂Sb₂Se₄Te₁ (GSST). Selective control of the phase transition of each GSST nanopillar in the metamolecule allows multi-level modulation of the phase and amplitude of the light to be achieved. The functionalities of the structure are validated through the generation of optical vortices, phase-only hologram, and pure amplitude modulation. Benefiting from its dynamic wavefront control capability, the proposed metasurface offers major potential for use in future applications including complex beam steering, optical communications, 3D holograms, and displays.

Fullwave Maxwell inverse design of axisymmetric, tunable, and multi-scale multi-wavelength metalenses

We demonstrate new axisymmetric inverse-design techniques that can solve problems radically different from traditional lenses, including reconfigurable lenses (that shift a multi-frequency focal spot in response to refractive-index changes) and widely separated multi-wavelength lenses (λ = 1 µm and 10 µm). We also present experimental validation for an axisymmetric inverse-designed monochrome lens in the near-infrared fabricated via two-photon polymerization. Axisymmetry allows fullwave Maxwell solvers to be scaled up to structures hundreds or even thousands of wavelengths in diameter before requiring domain-decomposition approximations, while multilayer topology optimization with ∼10⁵ degrees of freedom can tackle challenging design problems even when restricted to axisymmetric structures.

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Recent progress in the development of artificial intelligence technologies, aided by deep learning algorithms, has led to an unprecedented revolution in neuromorphic circuits, bringing us ever closer to brain-like computers. However, the vast majority of advanced algorithms still have to run on conventional computers. Thus, their capacities are limited by what is known as the von-Neumann bottleneck, where the central processing unit for data computation and the main memory for data storage are separated. Emerging forms of non-volatile random access memory, such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory, and resistive random access memory, are widely considered to offer the best prospect of circumventing the von-Neumann bottleneck. This is due to their ability to merge storage and computational operations, such as Boolean logic. This paper reviews the most common kinds of non-volatile random access memory and their physical principles, together with their relative pros and cons when compared with conventional CMOS-based circuits (Complementary Metal Oxide Semiconductor). Their potential application to Boolean logic computation is then considered in terms of their working mechanism, circuit design and performance metrics. The paper concludes by envisaging the prospects offered by non-volatile devices for future brain-inspired and neuromorphic computation.

Nonvolatile Electrically Reconfigurable Integrated Photonic Switch Enabled by a Silicon PIN Diode Heater

Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic-photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo-optic or electro-optic modulation effects, resulting in large footprints and high energy consumption. As a promising alternative, chalcogenide phase-change materials (PCMs) exhibit strong optical modulation in a static, self-holding fashion, but the scalability of present PCM-integrated photonic applications is still limited by the poor optical or electrical actuation approaches. Here, with phase transitions actuated by in situ silicon PIN diode heaters, scalable nonvolatile electrically reconfigurable photonic switches using PCM-clad silicon waveguides and microring resonators are demonstrated. As a result, intrinsically compact and energy-efficient switching units operated with low driving voltages, near-zero additional loss, and reversible switching with high endurance are obtained in a complementary metal-oxide-semiconductor (CMOS)-compatible process. This work can potentially enable very large-scale CMOS-integrated programmable electronic-photonic systems such as optical neural networks and general-purpose integrated photonic processors.

Tunable narrowband shortwave-infrared absorber made of a nanodisk-based metasurface and a phase-change material Ge2Sb2Te5 layer

A tunable absorber made of a nanodisk-based metasurface is proposed to realize a narrowband shortwave-infrared (SWIR) perfect absorption. By introducing a phase-change material Ge₂Sb₂Te₅ (GST) layer, we produce a selective and active control of the optical response. It is found that the narrowband absorption of 99.9% can be achieved for amorphous GST (aGST) with a modulation depth of 54.6% at 1931 nm, which is attributed to the strong electric dipole resonance in the germanium nanodisks. Moreover, under the aGST state, the full width at half-maximum of 22 nm can be acquired for a normal TM-polarized wave, and such a nanodisk-based absorber enables a tunable operating wavelength by adjusting the geometrical parameters to realize the spectral selectivity. In addition, the nanodisk-based metasurface nanostructure, combined with a dielectric Bragg reflector with alternately stacked SiO₂ and TiO₂ layers, can realize the SWIR dual-band absorption for aGST and single-band absorption for crystalline GST through the adjustment of electric and magnetic resonances. The designed absorbers have the potential applications in tunable absorption filter, thermal sensing, and optical signal processing.

Reversible optical tuning of GeSbTe phase-change metasurface spectral filters for mid-wave infrared imaging

Tunable narrowband spectral filtering across arbitrary optical wavebands is highly desirable in a plethora of applications, from chemical sensing and hyperspectral imaging to infrared astronomy. Yet, the ability to reconfigure the optical properties, with full reversibility, of a solid-state large-area narrowband filter remains elusive. Existing solutions require either moving parts, have slow response times, or provide limited spectral coverage. Here, we demonstrate a 1-inch diameter continuously tunable, fully reversible, all-solid-state, narrowband phase-change metasurface filter based on a GeSbTe-225 (GST)-embedded plasmonic nanohole array. The passband of the presented device is ∼ 74 n m with ∼ 70 % transmittance and operates across the 3-5 µm thermal imaging waveband. Continuous, reconfigurable tuning is achieved by exploiting intermediate GST phases via optical switching with a single nanosecond laser pulse, and material stability is verified through multiple switching cycles. We further demonstrate multispectral thermal imaging in the mid-wave infrared using our active phase-change metasurfaces. Our results pave the way for highly functional, reduced power, compact hyperspectral imaging systems and customizable optical filters for real-world system integration.

CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Heterostructures (HS) have always been in attraction due to their inherited properties and different important applications. Integration of a phase-change material (PCM) with HS can tremendously extend the operating and application range using the "phase-tuning" of PCM for any optoelectronic devices. In the present study, we report a detailed study of electrical and optoelectronic characteristics of a p-p and p-n HS combining Ge₂Sb₂Te₅ (GST) and Si. Reasonable 2 order of resistance switching is achieved by thermal annealing. The changes in optical properties are analysed using Ellipsometry, UV-Vis-NIR and Raman spectroscopy to speculate the optoelectronic behaviour of GST/Si samples. The optical and electrical characterization were analysed with aluminium (Al), platinum (Pt) and Ti/Au contacts. Appreciable rectifications varying from 500 to 1,000 at lower voltages are achieved with different contacts for both phases of GST. The change in rectification amount and current polarity are obtained with different kinds of contacts and at different incident wavelengths indicating different mechanisms of charge separation and collection. Responsivity of more than 9 A/W with < 1,000 photo-current to dark-current ratio is demonstrated in wavelength range of 0.8-2 μm under moderate range of biasing under ~ μW source power illumination. The characteristics obtained were justified with the prediction of band alignment with the help of work-function difference measurement by Kelvin-probe force microscopy and carrier density measurement by Hall experiment. Our results provide understanding to the opto-electrical behaviour of a heterojunction made of stacking PCM (GST) on Si highlighting their future use in photonic/optoelectronic-integrated circuits.

On-chip sub-wavelength Bragg grating design based on novel low loss phase-change materials

We propose a reconfigurable and non-volatile Bragg grating in the telecommunication C-band based on the combination of novel low-loss phase-change materials (specifically Ge₂Sb₂Se₄Te₁ and Sb₂S₃) with a silicon nitride platform. The Bragg grating is formed by arrayed cells of phase-change material, whose crystallisation fraction modifies the Bragg wavelength and extinction ratio. These devices could be used in integrated photonic circuits for optical communications applications in smart filters and Bragg mirrors and could also find use in tuneable ring resonators, Mach-Zehnder interferometers or frequency selectors for future laser on chip applications. In the case of Ge₂Sb₂Se₄Te₁, crystallisation produces a Bragg resonance shift up to ∼ 15 nm, accompanied with a large amplitude modulation (insertion loss of 22 dB). Using Sb₂S₃, low losses are presented in both states of the phase change material, obtaining a ∼ 7 nm red-shift in the Bragg wavelength. The gratings are evaluated for two period numbers, 100 and 200 periods. The number of periods determines the bandwidth and extinction ratio of the filters. Increasing the number of periods increases the extinction ratio and reflected power, also narrowing the bandwidth. This results in a trade-off between device size and performance. Finally, we combine both phase-change materials in a single Bragg grating to provide both frequency and amplitude modulation. A defect is introduced in the Sb₂S₃ Bragg grating, producing a high quality factor resonance (Q ∼ 10⁴) which can be shifted by 7 nm via crystallisation. A GSST cell is then placed in the defect which can modulate the transmission amplitude from low loss to below -16 dB.

Modeling Electrical Switching of Nonvolatile Phase-Change Integrated Nanophotonic Structures with Graphene Heaters

Progress in integrated nanophotonics has enabled large-scale programmable photonic integrated circuits (PICs) for general-purpose electronic-photonic systems on a chip. Relying on the weak, volatile thermo-optic, or electro-optic effects, such systems usually exhibit limited reconfigurability along with high-energy consumption and large footprints. These challenges can be addressed by resorting to chalcogenide phase-change materials (PCMs) such as Ge₂Sb₂Te₅ (GST) that provide a substantial optical contrast in a self-holding fashion upon phase transitions. However, current PCM-based integrated photonic applications are limited to single devices or simple PICs because of the poor scalability of the optical or electrical self-heating actuation approaches. Thermal-conduction heating via external electrical heaters, instead, allows large-scale integration and large-area switching, but fast and energy-efficient electrical control is yet to be achieved. Here, we model electrical switching of GST-clad-integrated nanophotonic structures with graphene heaters based on the programmable GST-on-silicon platform. Thanks to the ultra-low heat capacity and high in-plane thermal conductivity of graphene, the proposed structures exhibit a high switching speed of ∼80 MHz and a high energy efficiency of 19.2 aJ/nm³ (6.6 aJ/nm³) for crystallization (amorphization) while achieving complete phase transitions to ensure strong attenuation (∼6.46 dB/μm) and optical phase (∼0.28 π/μm at 1550 nm) modulation. Compared with indium tin oxide and silicon p-i-n heaters, the structures with graphene heaters display two orders of magnitude higher figure of merits for heating and overall performance. Our work facilitates the analysis and understanding of the thermal-conduction heating-enabled phase transitions on PICs and supports the development of future large-scale PCM-based electronic-photonic systems.

Tunable mid-wave infrared Fabry-Perot bandpass filters using phase-change GeSbTe

We demonstrate spectrally-tunable Fabry-Perot bandpass filters operating across the MWIR by utilizing the phase-change material GeSbTe (GST) as a tunable cavity medium between two (Ge:Si) distributed Bragg reflectors. The induced refractive index modulation of GST increases the cavity's optical path length, red-shifting the passband. Our filters have spectral-tunability of ∼300 nm, transmission efficiencies of 60-75% and narrowband FWHMs of 50-65 nm (Q-factor ∼70-90). We further show multispectral thermal imaging and gas sensing. By matching the filter's initial passband to a CO2 vibrational-absorption mode (∼4.25 µm), tunable atmospheric CO2 sensing and dynamic plume visualization of added CO2 is realized.

GaTe-Sb2Te3 thin-films phase change characteristics

A radio frequency magnetron co-sputtering technique exploiting GaTe and ${\rm Sb}_2 {\rm Te}_3$Sb₂Te₃ targets was used for the fabrication of Ga-Sb-Te thin films. Prepared layers cover broad region of chemical composition (${\sim}{10.0 {-} 26.3}\,\, {\rm at.}$∼10.0-26.3at. % of Ga, ${\sim}{19.9 {-} 34.4}\,\, {\rm at.}$∼19.9-34.4at. % of Sb) while keeping Te content fairly constant (53.8-55.6 at. % of Te). Upon crystallization induced by annealing, large variations in electrical contrast were found, reaching a sheet resistance ratio of ${{R}_{\rm annealed}}/{{R}_{\rm as - deposited}}\;\sim{2.2} \times {{10}^{ - 8}}$R_annealed/R_as-deposited∼2.2×10^-8 for the ${{\rm Ga}_{26.3}}{{\rm Sb}_{19.9}}{{\rm Te}_{53.8}}$Ga_26.3Sb_19.9Te_53.8 layer. Phase transition from the amorphous to crystalline state further leads to huge changes of optical functions demonstrated by optical contrast values up to $|\Delta n| + |\Delta k| = {4.20}$|Δn|+|Δk|=4.20 for ${{\rm Ga}_{26.3}}{{\rm Sb}_{19.9}}{{\rm Te}_{53.8}}$Ga_26.3Sb_19.9Te_53.8 composition.