151
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Bandurin DA, Tyurnina AV, Yu GL, Mishchenko A, Zólyomi V, Morozov SV, Kumar RK, Gorbachev RV, Kudrynskyi ZR, Pezzini S, Kovalyuk ZD, Zeitler U, Novoselov KS, Patanè A, Eaves L, Grigorieva IV, Fal'ko VI, Geim AK, Cao Y. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. NATURE NANOTECHNOLOGY 2017; 12:223-227. [PMID: 27870843 DOI: 10.1038/nnano.2016.242] [Citation(s) in RCA: 366] [Impact Index Per Article: 52.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2016] [Accepted: 10/10/2016] [Indexed: 05/25/2023]
Abstract
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 cm2 V-1 s-1 and 104 cm2 V-1 s-1 at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.
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Affiliation(s)
- Denis A Bandurin
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Anastasia V Tyurnina
- Skolkovo Institute of Science and Technology, Nobel St. 3, 143026 Moscow, Russia
- National Graphene Institute, University of Manchester, Manchester M13 9PL, UK
| | - Geliang L Yu
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Artem Mishchenko
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Viktor Zólyomi
- National Graphene Institute, University of Manchester, Manchester M13 9PL, UK
| | - Sergey V Morozov
- Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka 142432, Russia
- National University of Science and Technology 'MISiS', Leninsky Pr. 4, 119049 Moscow, Russia
| | | | - Roman V Gorbachev
- National Graphene Institute, University of Manchester, Manchester M13 9PL, UK
| | - Zakhar R Kudrynskyi
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - Sergio Pezzini
- High Field Magnet Laboratory (HFML -EMFL), Radboud University, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands
| | - Zakhar D Kovalyuk
- National Academy of Sciences of Ukraine, Institute for Problems of Materials Science, UA-58001 Chernovtsy, Ukraine
| | - Uli Zeitler
- High Field Magnet Laboratory (HFML -EMFL), Radboud University, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands
| | | | - Amalia Patanè
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - Laurence Eaves
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - Irina V Grigorieva
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Vladimir I Fal'ko
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
- National Graphene Institute, University of Manchester, Manchester M13 9PL, UK
| | - Andre K Geim
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Yang Cao
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
- National Graphene Institute, University of Manchester, Manchester M13 9PL, UK
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152
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Kou L, Du A, Ma Y, Liao T, Chen C. Charging assisted structural phase transitions in monolayer InSe. Phys Chem Chem Phys 2017; 19:22502-22508. [DOI: 10.1039/c7cp04469k] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two new phases of InSe with novel electronic properties have been identified by first-principles calculations; charge doping and substrates are suggested as feasible methods to stabilize these structures.
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Affiliation(s)
- Liangzhi Kou
- School of Chemistry
- Physics and Mechanical Engineering Faculty
- Queensland University of Technology
- Brisbane
- Australia
| | - Aijun Du
- School of Chemistry
- Physics and Mechanical Engineering Faculty
- Queensland University of Technology
- Brisbane
- Australia
| | - Yandong Ma
- Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie
- Universität Leipzig
- 04103 Leipzig
- Germany
| | - Ting Liao
- School of Chemistry
- Physics and Mechanical Engineering Faculty
- Queensland University of Technology
- Brisbane
- Australia
| | - Changfeng Chen
- Department of Physics and Astronomy and High Pressure Science and Engineering Center
- University of Nevada
- Las Vegas
- USA
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153
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Man MKL, Margiolakis A, Deckoff-Jones S, Harada T, Wong EL, Krishna MBM, Madéo J, Winchester A, Lei S, Vajtai R, Ajayan PM, Dani KM. Imaging the motion of electrons across semiconductor heterojunctions. NATURE NANOTECHNOLOGY 2017; 12:36-40. [PMID: 27723731 DOI: 10.1038/nnano.2016.183] [Citation(s) in RCA: 65] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2016] [Accepted: 08/22/2016] [Indexed: 05/22/2023]
Abstract
Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure-a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.
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Affiliation(s)
- Michael K L Man
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Kunigami, Okinawa 904-495, Japan
| | - Athanasios Margiolakis
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Kunigami, Okinawa 904-495, Japan
| | - Skylar Deckoff-Jones
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Kunigami, Okinawa 904-495, Japan
| | - Takaaki Harada
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Kunigami, Okinawa 904-495, Japan
| | - E Laine Wong
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Kunigami, Okinawa 904-495, Japan
| | - M Bala Murali Krishna
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Kunigami, Okinawa 904-495, Japan
| | - Julien Madéo
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Kunigami, Okinawa 904-495, Japan
| | - Andrew Winchester
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Kunigami, Okinawa 904-495, Japan
| | - Sidong Lei
- Department of Materials Science and Nanoengineering, Rice University, Texas 77005, USA
| | - Robert Vajtai
- Department of Materials Science and Nanoengineering, Rice University, Texas 77005, USA
| | - Pulickel M Ajayan
- Department of Materials Science and Nanoengineering, Rice University, Texas 77005, USA
| | - Keshav M Dani
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Kunigami, Okinawa 904-495, Japan
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154
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Zheng T, Wu ZT, Nan HY, Yu YF, Zafar A, Yan ZZ, Lu JP, Ni ZH. Layer-number dependent and structural defect related optical properties of InSe. RSC Adv 2017. [DOI: 10.1039/c7ra09370e] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We present systematic investigations on the layer-dependent optical properties of InSe and modify its excitonic states by electron beam irradiation.
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Affiliation(s)
- T. Zheng
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - Z. T. Wu
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - H. Y. Nan
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - Y. F. Yu
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - A. Zafar
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - Z. Z. Yan
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - J. P. Lu
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - Z. H. Ni
- School of Physics
- Southeast University
- Nanjing 211189
- China
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials
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155
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The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals. Sci Rep 2016; 6:39619. [PMID: 28008964 PMCID: PMC5180233 DOI: 10.1038/srep39619] [Citation(s) in RCA: 127] [Impact Index Per Article: 15.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2016] [Accepted: 11/23/2016] [Indexed: 12/12/2022] Open
Abstract
The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate the metal chalcogenide InSe, a recent addition to the family of vdW layered crystals, which transforms from a direct to an indirect band gap semiconductor as the number of layers is reduced. We investigate this direct-to-indirect bandgap crossover, demonstrate a highly tuneable optical response from the near infrared to the visible spectrum with decreasing layer thickness down to 2 layers, and report quantum dot-like optical emissions distributed over a wide range of energy. Our analysis also indicates that electron and exciton effective masses are weakly dependent on the layer thickness and are significantly smaller than in other vdW crystals. These properties are unprecedented within the large family of vdW crystals and demonstrate the potential of InSe for electronic and photonic technologies.
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156
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Zhou X, Zhang Q, Gan L, Li H, Xiong J, Zhai T. Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2016; 3:1600177. [PMID: 27981008 PMCID: PMC5157174 DOI: 10.1002/advs.201600177] [Citation(s) in RCA: 69] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2016] [Indexed: 05/19/2023]
Abstract
As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth-abundant, low-cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.
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Affiliation(s)
- Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Qi Zhang
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Lin Gan
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu611731P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
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157
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Lauth J, Kulkarni A, Spoor FCM, Renaud N, Grozema FC, Houtepen AJ, Schins JM, Kinge S, Siebbeles LDA. Photogeneration and Mobility of Charge Carriers in Atomically Thin Colloidal InSe Nanosheets Probed by Ultrafast Terahertz Spectroscopy. J Phys Chem Lett 2016; 7:4191-4196. [PMID: 27715056 DOI: 10.1021/acs.jpclett.6b01835] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The implementation of next generation ultrathin electronics by applying highly promising dimensionality-dependent physical properties of two-dimensional (2D) semiconductors is ever increasing. In this context, the van der Waals layered semiconductor InSe has proven its potential as photodetecting material with high charge carrier mobility. We have determined the photogeneration charge carrier quantum yield and mobility in atomically thin colloidal InSe nanosheets (inorganic layer thickness 0.8-1.7 nm, mono/double-layers, ≤ 5 nm including ligands) by ultrafast transient terahertz (THz) spectroscopy. A near unity quantum yield of free charge carriers is determined for low photoexcitation density. The charge carrier quantum yield decreases at higher excitation density due to recombination of electrons and holes, leading to the formation of neutral excitons. In the THz frequency domain, we probe a charge mobility as high as 20 ± 2 cm2/(V s). The THz mobility is similar to field-effect transistor mobilities extracted from unmodified exfoliated thin InSe devices. The current work provides the first results on charge carrier dynamics in ultrathin colloidal InSe nanosheets.
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Affiliation(s)
- Jannika Lauth
- Chemical Engineering Department, Delft University of Technology , Van der Maasweg 9, NL-2629 HZ Delft, The Netherlands
| | - Aditya Kulkarni
- Chemical Engineering Department, Delft University of Technology , Van der Maasweg 9, NL-2629 HZ Delft, The Netherlands
| | - Frank C M Spoor
- Chemical Engineering Department, Delft University of Technology , Van der Maasweg 9, NL-2629 HZ Delft, The Netherlands
| | - Nicolas Renaud
- Chemical Engineering Department, Delft University of Technology , Van der Maasweg 9, NL-2629 HZ Delft, The Netherlands
| | - Ferdinand C Grozema
- Chemical Engineering Department, Delft University of Technology , Van der Maasweg 9, NL-2629 HZ Delft, The Netherlands
| | - Arjan J Houtepen
- Chemical Engineering Department, Delft University of Technology , Van der Maasweg 9, NL-2629 HZ Delft, The Netherlands
| | - Juleon M Schins
- Chemical Engineering Department, Delft University of Technology , Van der Maasweg 9, NL-2629 HZ Delft, The Netherlands
| | - Sachin Kinge
- Toyota Motor Europe, Materials Research & Development , Hoge Wei 33, B-1930 Zaventem, Belgium
| | - Laurens D A Siebbeles
- Chemical Engineering Department, Delft University of Technology , Van der Maasweg 9, NL-2629 HZ Delft, The Netherlands
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158
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Xu K, Yin L, Huang Y, Shifa TA, Chu J, Wang F, Cheng R, Wang Z, He J. Synthesis, properties and applications of 2D layered M IIIX VI (M = Ga, In; X = S, Se, Te) materials. NANOSCALE 2016; 8:16802-16818. [PMID: 27714166 DOI: 10.1039/c6nr05976g] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Group III-VI compounds MIIIXVI (M = Ga, In; X = S, Se, Te) are one class of important 2D layered materials and are currently attracting increasing interest due to their unique electronic and optoelectronic properties and their great potential applications in various other fields. Similar to 2D layered transition metal dichalcogenides (TMDs), MIIIXVI also have the significant merits of ultrathin thickness, ultrahigh surface-to-volume ratio, and high compatibility with flexible devices. More impressively, in contrast with TMDCs, MIIIXVI demonstrate many superior properties, such as direct band gap electronic structure, high carrier mobility, rare p-type electronic behaviors, high charge density, and so on. These unique characteristics cause high-performance device applications in electronics, optoelectronics, and optics. In this review, we aim to provide a summary of the state-of-the-art of research activities in 2D layered MIIIXVI materials. The scope of the review covers the synthesis and properties of 2D layered MIIIXVI materials and their van der Waals heterostructures. We especially focus on the applications in electronics and optoelectronics. Moreover, the review concludes with some perspectives on future developments in this field.
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Affiliation(s)
- Kai Xu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. and University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Yin
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. and University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yun Huang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. and University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tofik Ahmed Shifa
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. and University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junwei Chu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
| | - Feng Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. and University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ruiqing Cheng
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. and University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
| | - Jun He
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
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159
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Wang Y, Della Gaspera E, Carey BJ, Atkin P, Berean KJ, Clark RM, Cole IS, Xu ZQ, Zhang Y, Bao Q, Ou JZ, Daeneke T, Kalantar-Zadeh K. Enhanced quantum efficiency from a mosaic of two dimensional MoS2 formed onto aminosilane functionalised substrates. NANOSCALE 2016; 8:12258-12266. [PMID: 27263805 DOI: 10.1039/c6nr02197b] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Developing scalable methods of growing two dimensional molybdenum disulphide (2D MoS2) with strong optical properties, on any desired substrates, is a necessary step towards industrial uptake of this material for optical applications. In this study, Si/SiO2 substrates were functionalised using self-assembled monolayers of three different aminosilanes with various numbers of amine groups and molecular lengths as underlayers for enhancing the adherence of the molybdenum precursor. The tetrahedral [MoS4](2-) anion groups from the molybdenum precursor were bonded on these silanised Si/SiO2 substrates afterwards. The substrates were then treated with a combined thermolysis and sulphurisation step. The results showed that silanisation of the substrates using the longest chains and the largest number of amine groups provided a good foundation to grow quasi 2D MoS2 made from adjacent flakes in a mosaic formation. Microscopy and spectroscopy investigations revealed that these quasi 2D MoS2 formed using this long chain aminosilane resulted in flakes with lateral dimensions in micron and submicron ranges composed of adjoining MoS2 pieces of 20 to 60 nm in lateral dimensions, dominantly made of 3 to 5 MoS2 fundamental layers. The obtained quasi 2D MoS2 shows a high internal quantum efficiency of 2.6% associated with the quantum confinement effect and high stoichiometry of the adjoining nanoflakes that form the structure of the sheets. The synthesis technique in this study is reliable and facile and offers a procedure to form large, scalable and patternable quasi 2D MoS2 sheets on various substrates with enhanced optical properties for practical applications.
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Affiliation(s)
- Yichao Wang
- School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia.
| | - Enrico Della Gaspera
- School of Science, RMIT University, Melbourne, Victoria, Australia and CSIRO Manufacturing Flagship, Clayton, Victoria, Australia
| | - Benjamin J Carey
- School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia.
| | - Paul Atkin
- School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia. and CSIRO Manufacturing Flagship, Clayton, Victoria, Australia
| | - Kyle J Berean
- School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia.
| | - Rhiannon M Clark
- School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia. and CSIRO Manufacturing Flagship, Clayton, Victoria, Australia
| | - Ivan S Cole
- CSIRO Manufacturing Flagship, Clayton, Victoria, Australia
| | - Zai-Quan Xu
- Department of Materials Science and Engineering, Faculty of Engineering, Monash University, Clayton 3800, Victoria, Australia
| | - Yupeng Zhang
- Department of Materials Science and Engineering, Faculty of Engineering, Monash University, Clayton 3800, Victoria, Australia
| | - Qiaoliang Bao
- Department of Materials Science and Engineering, Faculty of Engineering, Monash University, Clayton 3800, Victoria, Australia
| | - Jian Zhen Ou
- School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia.
| | - Torben Daeneke
- School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia.
| | - Kourosh Kalantar-Zadeh
- School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia.
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160
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Brotons-Gisbert M, Andres-Penares D, Suh J, Hidalgo F, Abargues R, Rodríguez-Cantó PJ, Segura A, Cros A, Tobias G, Canadell E, Ordejón P, Wu J, Martínez-Pastor JP, Sánchez-Royo JF. Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap. NANO LETTERS 2016; 16:3221-3229. [PMID: 27080194 DOI: 10.1021/acs.nanolett.6b00689] [Citation(s) in RCA: 53] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Manipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. Two-dimensional semiconductors have revealed promising perspectives in nanotechnology. However, the tunability of their physical properties is challenging for semiconductors studied until now. Here we show the ability of morphological manipulation strategies, such as nanotexturing or, at the limit, important surface roughness, to enhance light absorption and the luminescent response of atomically thin indium selenide nanosheets. Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. These results are relevant for the design of new optoelectronic devices, including heterostructures of two-dimensional materials with optimized band gap functionalities and in-plane heterojunctions with minimal junction defect density.
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Affiliation(s)
- Mauro Brotons-Gisbert
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain
| | - Daniel Andres-Penares
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain
| | - Joonki Suh
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Francisco Hidalgo
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra 08193 Barcelona, Spain
| | - Rafael Abargues
- Intenanomat S.L., c/Catedrático José Beltrán 2, 46980 Paterna, Spain
| | | | - Alfredo Segura
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain
| | - Ana Cros
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain
| | - Gerard Tobias
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus de la UAB, 08193 Bellaterra, Barcelona, Spain
| | - Enric Canadell
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus de la UAB, 08193 Bellaterra, Barcelona, Spain
| | - Pablo Ordejón
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra 08193 Barcelona, Spain
| | - Junqiao Wu
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Juan P Martínez-Pastor
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain
| | - Juan F Sánchez-Royo
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain
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161
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Wang YJ, Zhou KG, Yu G, Zhong X, Zhang HL. Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor. Sci Rep 2016; 6:24981. [PMID: 27114052 PMCID: PMC4845026 DOI: 10.1038/srep24981] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2016] [Accepted: 04/08/2016] [Indexed: 11/09/2022] Open
Abstract
Arsenene, as a member of the Group V elemental two-dimensional materials appears on the horizon, has shown great prospects. However, its indirect bandgap limits the applications in optoelectronics. In this theoretical work, we reported that partial oxidation can tune the indirect bandgap of arsenene into the direct one. Attributed to the enthalpy decreasing linear to the oxygen ratio, partial oxidized arsenene can be controllably produced by the progressive oxidation under low temperature. Importantly, by increasing the oxygen content from 1O/18As to 18O/18As, the oxidation can narrow the direct bandgap of oxidized arsenene from 1.29 to 0.02 eV. The bandgap of partial oxidized arsenene is proportional to the oxygen content. Consequently, the partial oxidized arsenene with tunable direct bandgap has great potentials in the high efficient infra light emitter and photo-voltaic devices.
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Affiliation(s)
- Yu-Jiao Wang
- School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Kai-Ge Zhou
- School of Physics and Astronomy, The University of Manchester, Manchester, M13 9PL, UK
| | - Geliang Yu
- School of Physics and Astronomy, The University of Manchester, Manchester, M13 9PL, UK
| | - Xing Zhong
- College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, China
| | - Hao-Li Zhang
- College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, China
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162
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Deckoff-Jones S, Zhang J, Petoukhoff CE, Man MKL, Lei S, Vajtai R, Ajayan PM, Talbayev D, Madéo J, Dani KM. Observing the interplay between surface and bulk optical nonlinearities in thin van der Waals crystals. Sci Rep 2016; 6:22620. [PMID: 26936437 PMCID: PMC4776178 DOI: 10.1038/srep22620] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2015] [Accepted: 02/17/2016] [Indexed: 01/28/2023] Open
Abstract
Van der Waals materials, existing in a range of thicknesses from monolayer to bulk, allow for interplay between surface and bulk nonlinearities, which otherwise dominate only at atomically-thin or bulk extremes, respectively. Here, we observe an unexpected peak in intensity of the generated second harmonic signal versus the thickness of Indium Selenide crystals, in contrast to the quadratic increase expected from thin crystals. We explain this by interference effects between surface and bulk nonlinearities, which offer a new handle on engineering the nonlinear optical response of 2D materials and their heterostructures.
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Affiliation(s)
- Skylar Deckoff-Jones
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna, Japan
| | - Jingjing Zhang
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna, Japan
| | - Christopher E Petoukhoff
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna, Japan
| | - Michael K L Man
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna, Japan
| | - Sidong Lei
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas, 77005, USA
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas, 77005, USA
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas, 77005, USA
| | - Diyar Talbayev
- Department of Physics and Engineering Physics, Tulane University, 6400 Freret Street, New Orleans, Louisiana 70118, US
| | - Julien Madéo
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna, Japan
| | - Keshav M Dani
- Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna, Japan
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163
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Pant A, Mutlu Z, Wickramaratne D, Cai H, Lake RK, Ozkan C, Tongay S. Fundamentals of lateral and vertical heterojunctions of atomically thin materials. NANOSCALE 2016; 8:3870-3887. [PMID: 26831401 DOI: 10.1039/c5nr08982d] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
At the turn of this century, Herbert Kroemer, the 2000 Nobel Prize winner in Physics, famously commented that "the interface is the device". This statement has since opened up unparalleled opportunities at the interface of conventional three-dimensional (3D) materials (H. Kroemer, Quasi-Electric and Quasi-Magnetic Fields in Non-Uniform Semiconductors, RCA Rev., 1957, 18, 332-342). More than a decade later, Sir Andre Geim and Irina Grigorieva presented their views on 2D heterojunctions which further cultivated broad interests in the 2D materials field. Currently, advances in two-dimensional (2D) materials enable us to deposit layered materials that are only one or few unit-cells in thickness to construct sharp in-plane and out-of-plane interfaces between dissimilar materials, and to be able to fabricate novel devices using these cutting-edge techniques. The interface alone, which traditionally dominated overall device performance, thus has now become the device itself. Fueled by recent progress in atomically thin materials, we are now at the ultimate limit of interface physics, which brings to us new and exciting opportunities, with equally demanding challenges. This paper endeavors to provide stalwarts and newcomers a perspective on recent advances in synthesis, fundamentals, applications, and future prospects of a large variety of heterojunctions of atomically thin materials.
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Affiliation(s)
- Anupum Pant
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA.
| | - Zafer Mutlu
- Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, Riverside, CA 92521, USA.
| | | | - Hui Cai
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA.
| | - Roger K Lake
- Laboratory for Terahertz and Terascale Electronics, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, USA
| | - Cengiz Ozkan
- Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, Riverside, CA 92521, USA.
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA.
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164
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Lee HJ, Lee JW, Kim HJ, Jung DH, Lee KS, Kim SH, Geum DM, Kim CZ, Choi WJ, Baik JM. Optical design of ZnO-based antireflective layers for enhanced GaAs solar cell performance. Phys Chem Chem Phys 2016; 18:2906-12. [PMID: 26732237 DOI: 10.1039/c5cp06274h] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A series of hierarchical ZnO-based antireflection coatings with different nanostructures (nanowires and nanosheets) is prepared hydrothermally, followed by means of RF sputtering of MgF2 layers for coaxial nanostructures. Structural analysis showed that both ZnO had a highly preferred orientation along the 〈0001〉 direction with a highly crystalline MgF2 shell coated uniformly. However, a small amount of Al was present in nanosheets, originating from Al diffusion from the Al seed layer, resulting in an increase of the optical bandgap. Compared with the nanosheet-based antireflection coatings, the nanowire-based ones exhibited a significantly lower reflectance (∼2%) in ultraviolet and visible light wavelength regions. In particular, they showed perfect light absorption at wavelength less than approximately 400 nm. However, a GaAs single junction solar cell with nanosheet-based antireflection coatings showed the largest enhancement (43.9%) in power conversion efficiency. These results show that the increase of the optical bandgap of the nanosheets by the incorporation of Al atoms allows more photons enter the active region of the solar cell, improving the performance.
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Affiliation(s)
- Hye Jin Lee
- School of Materials Science and Engineering, KIST-UNIST-Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
| | - Jae Won Lee
- School of Materials Science and Engineering, KIST-UNIST-Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
| | - Hee Jun Kim
- School of Materials Science and Engineering, KIST-UNIST-Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
| | - Dae-Han Jung
- School of Materials Science and Engineering, KIST-UNIST-Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
| | - Ki-Suk Lee
- School of Materials Science and Engineering, KIST-UNIST-Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
| | - Sang Hyeon Kim
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 136-791, Korea.
| | - Dae-myeong Geum
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 136-791, Korea.
| | - Chang Zoo Kim
- Nano Process Division Korea Advanced Nano Fab Center, Gyeonggi-do 443-270, Korea
| | - Won Jun Choi
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 136-791, Korea.
| | - Jeong Min Baik
- School of Materials Science and Engineering, KIST-UNIST-Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
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165
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Longuinhos R, Ribeiro-Soares J. Ultra-weak interlayer coupling in two-dimensional gallium selenide. Phys Chem Chem Phys 2016; 18:25401-25408. [DOI: 10.1039/c6cp03806a] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
By using symmetry arguments and first principles calculations, we study the stability of β and ε few-layer GaSe and their low-frequency interlayer breathing and shear modes, unveiling uncommon lubricant properties and exfoliability at the nanoscale.
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Affiliation(s)
- R. Longuinhos
- Departamento de Física
- Universidade Federal de Lavras
- Lavras
- Brazil
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166
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Airo MA, Gqoba S, Otieno F, Moloto MJ, Moloto N. Structural modification and band-gap crossover in indium selenide nanosheets. RSC Adv 2016. [DOI: 10.1039/c6ra00262e] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Herein, we report on the synthesis of InSe nanosheets.
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Affiliation(s)
- Mildred A. Airo
- Molecular Sciences Institute
- School of Chemistry
- University of the Witwatersrand
- Wits
- Republic of South Africa
| | - Siziwe Gqoba
- Molecular Sciences Institute
- School of Chemistry
- University of the Witwatersrand
- Wits
- Republic of South Africa
| | - Francis Otieno
- Materials for Energy Research Group
- University of the Witwatersrand
- Wits
- Republic of South Africa
- School of Physics
| | - Makwena J. Moloto
- Department of Chemistry
- Vaal University of Technology
- Vanderbijlpark
- Republic of South Africa
| | - Nosipho Moloto
- Molecular Sciences Institute
- School of Chemistry
- University of the Witwatersrand
- Wits
- Republic of South Africa
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167
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Huang W, Gan L, Li H, Ma Y, Zhai T. 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics. CrystEngComm 2016. [DOI: 10.1039/c5ce01986a] [Citation(s) in RCA: 143] [Impact Index Per Article: 17.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
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168
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Osman M, Huang Y, Feng W, Liu G, Qiu Y, Hu P. Modulation of opto-electronic properties of InSe thin layers via phase transformation. RSC Adv 2016. [DOI: 10.1039/c6ra13543a] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Phase engineering of two-dimensional materials offers unique opportunities for acquiring novel opto-electronic properties and allows for the searching of outstanding candidates for applications in opto-electronic devices, catalysis, etc.
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Affiliation(s)
- Makkawi Osman
- Key Lab of Microsystem and Microstructure of Ministry of Education
- Harbin Institute of Technology
- School of Materials Science and Engineering
- Harbin
- China
| | - Yanmin Huang
- Key Lab of Microsystem and Microstructure of Ministry of Education
- Harbin Institute of Technology
- School of Materials Science and Engineering
- Harbin
- China
| | - Wei Feng
- Key Lab of Microsystem and Microstructure of Ministry of Education
- Harbin Institute of Technology
- School of Materials Science and Engineering
- Harbin
- China
| | - Guangbo Liu
- Key Lab of Microsystem and Microstructure of Ministry of Education
- Harbin Institute of Technology
- School of Materials Science and Engineering
- Harbin
- China
| | - Yunfeng Qiu
- Key Lab of Microsystem and Microstructure of Ministry of Education
- Harbin Institute of Technology
- School of Materials Science and Engineering
- Harbin
- China
| | - PingAn Hu
- Key Lab of Microsystem and Microstructure of Ministry of Education
- Harbin Institute of Technology
- School of Materials Science and Engineering
- Harbin
- China
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169
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Zhou X, Gan L, Tian W, Zhang Q, Jin S, Li H, Bando Y, Golberg D, Zhai T. Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:8035-41. [PMID: 26541236 DOI: 10.1002/adma.201503873] [Citation(s) in RCA: 177] [Impact Index Per Article: 19.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2015] [Revised: 08/31/2015] [Indexed: 05/22/2023]
Abstract
High-quality ultrathin single-crystalline SnSe2 flakes are synthesized under atmospheric-pressure chemical vapor deposition for the first time. A high-performance photodetector based on the individual SnSe2 flake demonstrates a high photoresponsivity of 1.1 × 10(3) A W(-1), a high EQE of 2.61 × 10(5)%, and superb detectivity of 1.01 × 10(10) Jones, combined with fast rise and decay times of 14.5 and 8.1 ms, respectively.
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Affiliation(s)
- Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Lin Gan
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Wenming Tian
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, P. R. China
| | - Qi Zhang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Shengye Jin
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Yoshio Bando
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan
| | - Dmitri Golberg
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
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170
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Feng W, Zheng W, Chen X, Liu G, Hu P. Gate Modulation of Threshold Voltage Instability in Multilayer InSe Field Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2015; 7:26691-26695. [PMID: 26575205 DOI: 10.1021/acsami.5b08635] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report a modulation of threshold voltage instability of back-gated multilayer InSe FETs by gate bias stress. The performance stability of multilayer InSe FETs is affected by gate bias polar, gate bias stress time and gate bias sweep rate under ambient conditions. The on-current increases and threshold voltage shifts to negative gate bias stress direction with negative bias stress applied, which are opposite to that of positive bias stress. The intensity of gate bias stress effect is influenced by applied gate bias time and the sweep rate of gate bias stress. The behavior can be explained by the surface charge trapping model due to the adsorbing/desorbing oxygen and/or water molecules on the InSe surface. This study offers an opportunity to understand gate bias stress modulation of performance instability of back-gated multilayer InSe FETs and provides a clue for designing desirable InSe nanoelectronic and optoelectronic devices.
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Affiliation(s)
- Wei Feng
- Academy of Fundamental and Interdisciplinary Science, ‡School of Materials Science and Engineering, Harbin Institute of Technology , Harbin 150080, China
| | - Wei Zheng
- Academy of Fundamental and Interdisciplinary Science, ‡School of Materials Science and Engineering, Harbin Institute of Technology , Harbin 150080, China
| | - XiaoShuang Chen
- Academy of Fundamental and Interdisciplinary Science, ‡School of Materials Science and Engineering, Harbin Institute of Technology , Harbin 150080, China
| | - Guangbo Liu
- Academy of Fundamental and Interdisciplinary Science, ‡School of Materials Science and Engineering, Harbin Institute of Technology , Harbin 150080, China
| | - PingAn Hu
- Academy of Fundamental and Interdisciplinary Science, ‡School of Materials Science and Engineering, Harbin Institute of Technology , Harbin 150080, China
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171
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Kudrynskyi ZR, Bakhtinov AP, Vodopyanov VN, Kovalyuk ZD, Tovarnitskii MV, Lytvyn OS. Fabrication and characterization of PbSe nanostructures on van der Waals surfaces of GaSe layered semiconductor crystals. NANOTECHNOLOGY 2015; 26:465601. [PMID: 26511404 DOI: 10.1088/0957-4484/26/46/465601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The growth morphology, composition and structure of PbSe nanostructures grown on the atomically smooth, clean, nanoporous and oxidized van der Waals (0001) surfaces of GaSe layered crystals were studied by means of atomic force microscopy, x-ray diffractometry,photoelectron spectroscopy and Raman spectroscopy. Semiconductor heterostructures were grown by the hot-wall technique in vacuum. Nanoporous GaSe substrates were fabricated by the thermal annealing of layered crystals in a molecular hydrogen atmosphere. The irradiation of the GaSe(0001) surface by UV radiation was used to fabricate thin Ga(2)O(3) layers with thickness < 2 nm. It was found that the narrow gap semiconductor PbSe shows a tendency to form clusters with a square or rectangular symmetry on the cleanlow-energy (0001) GaSe surface, and (001)-oriented growth of PbSe thin films takes place on this surface. Using this growth technique it is possible to grow PbSe nanostructures with different morphologies:continuous epitaxial layers with thickness < 10 nm on the uncontaminated p-GaSe(0001)surfaces, homogeneous arrays of quantum dots with a high lateral density (more than 1011 cm(−2))on the oxidized van der Waals (0001) surfaces and faceted square pillar-like nanostructures with a low lateral density (∼10(8) cm(−2)) on the nanoporous GaSe substrates. We exploit the ‘vapor–liquid–solid’ growth with low-melting metal (Ga) catalyst of PbSe crystalline branched nanostructures via a surface-defect-assisted mechanism.
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172
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Zhou J, Zeng Q, Lv D, Sun L, Niu L, Fu W, Liu F, Shen Z, Jin C, Liu Z. Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition. NANO LETTERS 2015; 15:6400-6405. [PMID: 26360543 DOI: 10.1021/acs.nanolett.5b01590] [Citation(s) in RCA: 93] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
In this work, we have demonstrated the synthesis of high-quality monolayered α-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality of the In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In2Se3 and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm(2)/ Vs. The In2Se3 layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In2Se3 atomic layers a promising candidate for the optoelectronic and photosensitive device applications.
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Affiliation(s)
- Jiadong Zhou
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Qingsheng Zeng
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Danhui Lv
- State Key Laboratory of Silicon Materials, and School of Material Science & Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
| | - Linfeng Sun
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University , 637371, Singapore
| | - Lin Niu
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Wei Fu
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Fucai Liu
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Zexiang Shen
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University , 637371, Singapore
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, and School of Material Science & Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
- NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University , 639798, Singapore
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173
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Debbichi L, Eriksson O, Lebègue S. Two-Dimensional Indium Selenides Compounds: An Ab Initio Study. J Phys Chem Lett 2015; 6:3098-3103. [PMID: 26267208 DOI: 10.1021/acs.jpclett.5b01356] [Citation(s) in RCA: 77] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We use first-principle calculations to investigate the electronic structure of InSe and In2Se3. The interlayer binding energy is found to be in the same range as for other 2D systems, and the monolayers are found to be dynamically stable, which suggest the possibility to obtain them as isolated layers. The GW approximation including spin-orbit is used to obtain the bandgaps, which are in the range relevant for application in electronics. Also, it is shown that an electric field perpendicular to the layers can induce a semiconductor to metal transition in this family of compounds.
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Affiliation(s)
- L Debbichi
- †Laboratoire de Cristallographie, Résonance Magnétique et Modélisations (CRM2, UMR CNRS 7036) Institut Jean Barriol, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre-lès-Nancy, France
- ‡Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala, Sweden
| | - O Eriksson
- ‡Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala, Sweden
| | - S Lebègue
- †Laboratoire de Cristallographie, Résonance Magnétique et Modélisations (CRM2, UMR CNRS 7036) Institut Jean Barriol, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre-lès-Nancy, France
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174
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Wang F, Wang Z, Wang Q, Wang F, Yin L, Xu K, Huang Y, He J. Synthesis, properties and applications of 2D non-graphene materials. NANOTECHNOLOGY 2015; 26:292001. [PMID: 26134271 DOI: 10.1088/0957-4484/26/29/292001] [Citation(s) in RCA: 32] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
As an emerging class of new materials, two-dimensional (2D) non-graphene materials, including layered and non-layered, and their heterostructures are currently attracting increasing interest due to their promising applications in electronics, optoelectronics and clean energy. In contrast to traditional semiconductors, such as Si, Ge and III-V group materials, 2D materials show significant merits of ultrathin thickness, very high surface-to-volume ratio, and high compatibility with flexible devices. Owing to these unique properties, while scaling down to ultrathin thickness, devices based on these materials as well as artificially synthetic heterostructures exhibit novel and surprising functions and performances. In this review, we aim to provide a summary on the state-of-the-art research activities on 2D non-graphene materials. The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy. Moreover, the review is concluded with some perspectives on the future developments in this field.
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Affiliation(s)
- Feng Wang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China. University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing 100049, People's Republic of China
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175
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Mudd GW, Svatek SA, Hague L, Makarovsky O, Kudrynskyi ZR, Mellor CJ, Beton PH, Eaves L, Novoselov KS, Kovalyuk ZD, Vdovin EE, Marsden AJ, Wilson NR, Patanè A. High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:3760-6. [PMID: 25981798 PMCID: PMC4768130 DOI: 10.1002/adma.201500889] [Citation(s) in RCA: 114] [Impact Index Per Article: 12.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2015] [Revised: 04/21/2015] [Indexed: 05/21/2023]
Abstract
High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures is achieved by exploiting the broad-band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near-infrared to the visible spectrum.
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Affiliation(s)
- Garry W Mudd
- School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, UK
| | - Simon A Svatek
- School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, UK
| | - Lee Hague
- School of Physics & Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Oleg Makarovsky
- School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, UK
| | - Zakhar R Kudrynskyi
- School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, UK
| | - Christopher J Mellor
- School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, UK
| | - Peter H Beton
- School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, UK
| | - Laurence Eaves
- School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, UK
| | - Kostya S Novoselov
- School of Physics & Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Zakhar D Kovalyuk
- Institute for Problems of Materials Science, The National Academy of Sciences of Ukraine, Chernivtsi, 58001, Ukraine
| | - Evgeny E Vdovin
- School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, UK
- Institute of Microelectronics Technology RAS, Chernogolovka, 142432, Russia
| | - Alex J Marsden
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Neil R Wilson
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Amalia Patanè
- School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, UK
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176
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Chen Z, Biscaras J, Shukla A. A high performance graphene/few-layer InSe photo-detector. NANOSCALE 2015; 7:5981-5986. [PMID: 25775954 DOI: 10.1039/c5nr00400d] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We fabricated a graphene/few-layer InSe heterostructure photo-detector and solved a recurrent materials problem concerning degradation of ultra-thin atomic layers in air. This heterostructure has a largely enhanced performance explained by its fundamentally different mode of functioning with respect to the corresponding device without graphene.
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Affiliation(s)
- Zhesheng Chen
- Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie (IMPMC), Sorbonne Universités - UPMC Univ Paris 06, UMR CNRS 7590, MNHN, IRD UMR 206, 4 Place Jussieu, F-75005 Paris, France.
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177
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Chakravarty D, Kumar P, Ugale VS, Late DJ. Microwave‐Assisted Synthesis of Few‐Layered TaTe
2
and Its Application as Supercapacitor. Eur J Inorg Chem 2015. [DOI: 10.1002/ejic.201403220] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Disha Chakravarty
- Physical and Materials Chemistry Division, CSIR‐National Chemical Laboratory, Dr. Homi Bhabha Road, Pashan, Pune‐ 411008, Maharashtra State, India, http://academic.ncl.res.in/dj.late/profile
| | - Praveen Kumar
- Physical and Materials Chemistry Division, CSIR‐National Chemical Laboratory, Dr. Homi Bhabha Road, Pashan, Pune‐ 411008, Maharashtra State, India, http://academic.ncl.res.in/dj.late/profile
| | - Vaishali S. Ugale
- Physical and Materials Chemistry Division, CSIR‐National Chemical Laboratory, Dr. Homi Bhabha Road, Pashan, Pune‐ 411008, Maharashtra State, India, http://academic.ncl.res.in/dj.late/profile
| | - Dattatray J. Late
- Physical and Materials Chemistry Division, CSIR‐National Chemical Laboratory, Dr. Homi Bhabha Road, Pashan, Pune‐ 411008, Maharashtra State, India, http://academic.ncl.res.in/dj.late/profile
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178
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Brus VV, Maryanchuk PD, Kovalyuk ZD, Abashyn SL. 2D nanocomposite photoconductive sensors fully dry drawn on regular paper. NANOTECHNOLOGY 2015; 26:255501. [PMID: 26023994 DOI: 10.1088/0957-4484/26/25/255501] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We proposed a new type of low-cost and environmentally friendly photoconductive sensor, based on GaSe/graphite nanocomposite fully dry drawn on paper. The proposed fully-drawn nanocomposite sensors successfully utilize the unique combination of structural and electrical properties of a layered semiconductor and graphite. In spite of the relatively pure photosensitivity of the proposed photodetectors, we believe that this work is the first step for the further development and enhancement of extremely simple and low-cost paper-based dry drawn layered semiconductor/graphite nanocomposite sensors.
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Affiliation(s)
- V V Brus
- University of California Santa Barbara, Department of Chemistry and Biochemistry, CA 93106, USA
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179
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Lei S, Wen F, Li B, Wang Q, Huang Y, Gong Y, He Y, Dong P, Bellah J, George A, Ge L, Lou J, Halas NJ, Vajtai R, Ajayan PM. Optoelectronic memory using two-dimensional materials. NANO LETTERS 2015; 15:259-65. [PMID: 25517502 DOI: 10.1021/nl503505f] [Citation(s) in RCA: 62] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe and MoS2 atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage.
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Affiliation(s)
- Sidong Lei
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
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180
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Buscema M, Island JO, Groenendijk DJ, Blanter SI, Steele GA, van der Zant HSJ, Castellanos-Gomez A. Photocurrent generation with two-dimensional van der Waals semiconductors. Chem Soc Rev 2015; 44:3691-718. [DOI: 10.1039/c5cs00106d] [Citation(s) in RCA: 641] [Impact Index Per Article: 71.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
We review photodetectors based on transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.
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Affiliation(s)
- Michele Buscema
- Kavli Institute of Nanoscience
- Delft University of Technology
- Delft
- The Netherlands
| | - Joshua O. Island
- Kavli Institute of Nanoscience
- Delft University of Technology
- Delft
- The Netherlands
| | - Dirk J. Groenendijk
- Kavli Institute of Nanoscience
- Delft University of Technology
- Delft
- The Netherlands
| | - Sofya I. Blanter
- Kavli Institute of Nanoscience
- Delft University of Technology
- Delft
- The Netherlands
| | - Gary A. Steele
- Kavli Institute of Nanoscience
- Delft University of Technology
- Delft
- The Netherlands
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181
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Feng W, Zhou X, Tian WQ, Zheng W, Hu P. Performance improvement of multilayer InSe transistors with optimized metal contacts. Phys Chem Chem Phys 2015; 17:3653-8. [DOI: 10.1039/c4cp04968c] [Citation(s) in RCA: 96] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Solid experimental investigations were performed to reveal the specific interface nature of thin-film InSe layered semiconductor/metals. Multilayer InSe transistors showed significantly increased mobilities in the contact sequence of Al, Ti, Cr, and In. The interface nature of the metal/thin-film InSe layered semiconductor was strong van der Waals epitaxial interactions, accompanied with d-orbital overlap.
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Affiliation(s)
- Wei Feng
- Academy of Fundamental and Interdisciplinary Science
- Harbin Institute of Technology
- Harbin
- People's Republic of China
- School of Materials Science and Engineering
| | - Xin Zhou
- Academy of Fundamental and Interdisciplinary Science
- Harbin Institute of Technology
- Harbin
- People's Republic of China
| | - Wei Quan Tian
- Academy of Fundamental and Interdisciplinary Science
- Harbin Institute of Technology
- Harbin
- People's Republic of China
| | - Wei Zheng
- Academy of Fundamental and Interdisciplinary Science
- Harbin Institute of Technology
- Harbin
- People's Republic of China
- School of Materials Science and Engineering
| | - PingAn Hu
- Academy of Fundamental and Interdisciplinary Science
- Harbin Institute of Technology
- Harbin
- People's Republic of China
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182
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Schwarz S, Dufferwiel S, Walker PM, Withers F, Trichet AA, Sich M, Li F, Chekhovich EA, Borisenko DN, Kolesnikov NN, Novoselov KS, Skolnick MS, Smith JM, Krizhanovskii DN, Tartakovskii AI. Two-dimensional metal-chalcogenide films in tunable optical microcavities. NANO LETTERS 2014; 14:7003-7008. [PMID: 25375802 PMCID: PMC4335560 DOI: 10.1021/nl503312x] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2014] [Revised: 11/05/2014] [Indexed: 05/31/2023]
Abstract
Integration of quasi-two-dimensional (2D) films of metal-chalcogenides in optical microcavities permits new photonic applications of these materials. Here we present tunable microcavities with monolayer MoS2 or few monolayer GaSe films. We observe significant modification of spectral and temporal properties of photoluminescence (PL): PL is emitted in spectrally narrow and wavelength-tunable cavity modes with quality factors up to 7400; a 10-fold PL lifetime shortening is achieved, a consequence of Purcell enhancement of the spontaneous emission rate.
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Affiliation(s)
- S. Schwarz
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - S. Dufferwiel
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - P. M. Walker
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - F. Withers
- School
of Physics and Astronomy, University of
Manchester, Manchester M13 9PL, United Kingdom
| | - A. A.
P. Trichet
- Department
of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United
Kingdom
| | - M. Sich
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - F. Li
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - E. A. Chekhovich
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - D. N. Borisenko
- Institute
of Solid State Physics, Russian Academy
of Sciences, Chernogolovka 142432, Russia
| | - N. N. Kolesnikov
- Institute
of Solid State Physics, Russian Academy
of Sciences, Chernogolovka 142432, Russia
| | - K. S. Novoselov
- School
of Physics and Astronomy, University of
Manchester, Manchester M13 9PL, United Kingdom
| | - M. S. Skolnick
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - J. M. Smith
- Department
of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United
Kingdom
| | - D. N. Krizhanovskii
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - A. I. Tartakovskii
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
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183
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Feng W, Zheng W, Cao W, Hu P. Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:6587-93. [PMID: 25167845 DOI: 10.1002/adma.201402427] [Citation(s) in RCA: 160] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2014] [Revised: 07/07/2014] [Indexed: 05/17/2023]
Abstract
The back gate multilayer InSe FETs exhibit ultrahigh carrier mobilities, surpassing all the reported layer semiconductor based electronics with the same device configuration, which is achieved by the suppression of the carrier scattering from interfacial coulomb impurities or surface polar phonons at the interface of an oxidized dielectric substrate. The room-temperature mobilities of multilayer InSe transistors increase from 64 cm(2)V(-1)s(-1) to 1055 cm(2)V(-1)s(-1) using a bilayer dielectric of poly-(methyl methacrylate) (PMMA)/Al2O3. The transistors also have high current on/off ratios of 1 × 10(8), low standby power dissipation, and robust current saturation in a broad voltage range.
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Affiliation(s)
- Wei Feng
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150080, China; School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
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184
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Han G, Chen ZG, Drennan J, Zou J. Indium selenides: structural characteristics, synthesis and their thermoelectric performances. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2014; 10:2747-2765. [PMID: 24729463 DOI: 10.1002/smll.201400104] [Citation(s) in RCA: 100] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2014] [Revised: 02/23/2014] [Indexed: 06/03/2023]
Abstract
Indium selenides have attracted extensive attention in high-efficiency thermoelectrics for waste heat energy conversion due to their extraordinary and tunable electrical and thermal properties. This Review aims to provide a thorough summary of the structural characteristics (e.g. crystal structures, phase transformations, and structural vacancies) and synthetic methods (e.g. bulk materials, thin films, and nanostructures) of various indium selenides, and then summarize the recent progress on exploring indium selenides as high-efficiency thermoelectric materials. By highlighting challenges and opportunities in the end, this Review intends to shine some light on the possible approaches for thermoelectric performance enhancement of indium selenides, which should open up an opportunity for applying indium selenides in the next-generation thermoelectric devices.
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Affiliation(s)
- Guang Han
- Materials Engineering, The University of Queensland, Brisbane, QLD, 4072, Australia
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185
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Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse. Sci Rep 2014; 4:5497. [PMID: 24975226 PMCID: PMC4074793 DOI: 10.1038/srep05497] [Citation(s) in RCA: 197] [Impact Index Per Article: 19.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2014] [Accepted: 06/12/2014] [Indexed: 12/11/2022] Open
Abstract
Compared with their bulk counterparts, atomically thin two-dimensional (2D) crystals exhibit new physical properties, and have the potential to enable next-generation electronic and optoelectronic devices. However, controlled synthesis of large uniform monolayer and multi-layer 2D crystals is still challenging. Here, we report the controlled synthesis of 2D GaSe crystals on SiO2/Si substrates using a vapor phase deposition method. For the first time, uniform, large (up to ~60 μm in lateral size), single-crystalline, triangular monolayer GaSe crystals were obtained and their structure and orientation were characterized from atomic scale to micrometer scale. The size, density, shape, thickness, and uniformity of the 2D GaSe crystals were shown to be controllable by growth duration, growth region, growth temperature, and argon carrier gas flow rate. The theoretical modeling of the electronic structure and Raman spectroscopy demonstrate a direct-to-indirect bandgap transition and progressive confinement-induced bandgap shifts for 2D GaSe crystals. The 2D GaSe crystals show p-type semiconductor characteristics and high photoresponsivity (~1.7 A/W under white light illumination) comparable to exfoliated GaSe nanosheets. These 2D GaSe crystals are potentially useful for next-generation electronic and optoelectronic devices such as photodetectors and field-effect transistors.
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186
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Tamalampudi SR, Lu YY, Kumar U R, Sankar R, Liao CD, Moorthy B K, Cheng CH, Chou FC, Chen YT. High performance and bendable few-layered InSe photodetectors with broad spectral response. NANO LETTERS 2014; 14:2800-2806. [PMID: 24742243 DOI: 10.1021/nl500817g] [Citation(s) in RCA: 275] [Impact Index Per Article: 27.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Two-dimensional crystals with a wealth of exotic dimensional-dependent properties are promising candidates for next-generation ultrathin and flexible optoelectronic devices. For the first time, we demonstrate that few-layered InSe photodetectors, fabricated on both a rigid SiO2/Si substrate and a flexible polyethylene terephthalate (PET) film, are capable of conducting broadband photodetection from the visible to near-infrared region (450-785 nm) with high photoresponsivities of up to 12.3 AW(-1) at 450 nm (on SiO2/Si) and 3.9 AW(-1) at 633 nm (on PET). These photoresponsivities are superior to those of other recently reported two-dimensional (2D) crystal-based (graphene, MoS2, GaS, and GaSe) photodetectors. The InSe devices fabricated on rigid SiO2/Si substrates possess a response time of ∼50 ms and exhibit long-term stability in photoswitching. These InSe devices can also operate on a flexible substrate with or without bending and reveal comparable performance to those devices on SiO2/Si. With these excellent optoelectronic merits, we envision that the nanoscale InSe layers will not only find applications in flexible optoelectronics but also act as an active component to configure versatile 2D heterostructure devices.
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