151
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Hu J, Guo Z, Mcwilliams PE, Darges JE, Druffel DL, Moran AM, Warren SC. Band Gap Engineering in a 2D Material for Solar-to-Chemical Energy Conversion. NANO LETTERS 2016; 16:74-79. [PMID: 26651872 DOI: 10.1021/acs.nanolett.5b02895] [Citation(s) in RCA: 43] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The electronic structure of 2D semiconductors depends on their thickness, providing new opportunities to engineer semiconductors for energy conversion, electronics, and catalysis. Here we show how a 3D semiconductor, black phosphorus, becomes active for solar-to-chemical energy conversion when it is thinned to a 2D material. The increase in its band gap, from 0.3 eV (3D) to 2.1 eV (2D monolayer), is accompanied by a 40-fold enhancement in the formation of chemical products. Despite this enhancement, smaller flakes also have shorter excited state lifetimes. We deduce a mechanism in which recombination occurs at flake edges, while the "van der Waals" surface of black phosphorus bonds to chemical intermediates and facilitates electron transfer. The unique properties of black phosphorus highlight its potential as a customizable material for solar energy conversion and catalysis, while also allowing us to identify design rules for 2D photocatalysts that will enable further improvements in these materials.
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Affiliation(s)
- Jun Hu
- Department of Chemistry and ‡Department of Applied Physical Sciences, University of North Carolina at Chapel Hill , Chapel Hill, North Carolina 27599, United States
| | - Zhenkun Guo
- Department of Chemistry and ‡Department of Applied Physical Sciences, University of North Carolina at Chapel Hill , Chapel Hill, North Carolina 27599, United States
| | - Peter E Mcwilliams
- Department of Chemistry and ‡Department of Applied Physical Sciences, University of North Carolina at Chapel Hill , Chapel Hill, North Carolina 27599, United States
| | - John E Darges
- Department of Chemistry and ‡Department of Applied Physical Sciences, University of North Carolina at Chapel Hill , Chapel Hill, North Carolina 27599, United States
| | - Daniel L Druffel
- Department of Chemistry and ‡Department of Applied Physical Sciences, University of North Carolina at Chapel Hill , Chapel Hill, North Carolina 27599, United States
| | - Andrew M Moran
- Department of Chemistry and ‡Department of Applied Physical Sciences, University of North Carolina at Chapel Hill , Chapel Hill, North Carolina 27599, United States
| | - Scott C Warren
- Department of Chemistry and ‡Department of Applied Physical Sciences, University of North Carolina at Chapel Hill , Chapel Hill, North Carolina 27599, United States
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152
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Bhimanapati GR, Lin Z, Meunier V, Jung Y, Cha J, Das S, Xiao D, Son Y, Strano MS, Cooper VR, Liang L, Louie SG, Ringe E, Zhou W, Kim SS, Naik RR, Sumpter BG, Terrones H, Xia F, Wang Y, Zhu J, Akinwande D, Alem N, Schuller JA, Schaak RE, Terrones M, Robinson JA. Recent Advances in Two-Dimensional Materials beyond Graphene. ACS NANO 2015; 9:11509-39. [PMID: 26544756 DOI: 10.1021/acsnano.5b05556] [Citation(s) in RCA: 892] [Impact Index Per Article: 99.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
The isolation of graphene in 2004 from graphite was a defining moment for the "birth" of a field: two-dimensional (2D) materials. In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement. Here, we review significant recent advances and important new developments in 2D materials "beyond graphene". We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies. Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (i.e., silicene, phosphorene, etc.) and transition metal carbide- and carbon nitride-based MXenes. We then discuss the doping and functionalization of 2D materials beyond graphene that enable device applications, followed by advances in electronic, optoelectronic, and magnetic devices and theory. Finally, we provide perspectives on the future of 2D materials beyond graphene.
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Affiliation(s)
- Ganesh R Bhimanapati
- Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Zhong Lin
- Department of Physics, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Vincent Meunier
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Yeonwoong Jung
- Nanoscience Technology Center, Department of Materials Science and Engineering, University of Central Florida , Orlando, Florida 32826, United States
| | - Judy Cha
- Department of Mechanical Engineering and Material Science, Yale School of Engineering and Applied Sciences , New Haven, Connecticut 06520, United States
| | - Saptarshi Das
- Birck Nanotechnology Center & Department of ECE, Purdue University , West Lafayette, Indiana 47907, United States
| | - Di Xiao
- Department of Physics, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
| | - Youngwoo Son
- Department of Chemical Engineering, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Michael S Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Valentino R Cooper
- Center for Nanophase Materials Sciences and Computer Science & Mathematics Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Steven G Louie
- Department of Physics, University of California at Berkeley , Berkeley, California 94720, United States
- Lawrence Berkeley National Lab , Berkeley, California 94720, United States
| | - Emilie Ringe
- Department of Materials Science & Nano Engineering, Rice University , Houston, Texas 77005, United States
| | - Wu Zhou
- Center for Nanophase Materials Sciences and Computer Science & Mathematics Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Steve S Kim
- Air Force Laboratory, Materials & Manufacturing directorate, Wright-Patterson AFB , Dayton, Ohio 45433, United States
- UES Inc. , Beavercreek, Ohio 45432, United States
| | - Rajesh R Naik
- Air Force Laboratory, Materials & Manufacturing directorate, Wright-Patterson AFB , Dayton, Ohio 45433, United States
| | - Bobby G Sumpter
- Center for Nanophase Materials Sciences and Computer Science & Mathematics Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Humberto Terrones
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University , New Haven, Connecticut 06511, United States
| | - Yeliang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Jun Zhu
- Department of Physics, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Deji Akinwande
- Microelectronics Research Centre, The University of Texas at Austin , Austin, Texas 78758, United States
| | - Nasim Alem
- Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Jon A Schuller
- Electrical and Computer Engineering Department, University of California at Santa Barbara , Santa Barbara, California 93106, United States
| | - Raymond E Schaak
- Department of Chemistry and Materials Research Institute, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
- Department of Physics, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
- Department of Chemistry and Materials Research Institute, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
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153
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Ling ZP, Sakar S, Mathew S, Zhu JT, Gopinadhan K, Venkatesan T, Ang KW. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier. Sci Rep 2015; 5:18000. [PMID: 26667402 PMCID: PMC4678863 DOI: 10.1038/srep18000] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2015] [Accepted: 10/30/2015] [Indexed: 11/09/2022] Open
Abstract
Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we report a new contact technology that employs the use of high work function nickel (Ni) and thermal anneal to produce a metal alloy that effectively reduces the contact Schottky barrier height (ΦB) in a BP FET. When annealed at 300 °C, the Ni electrode was found to react with the underlying BP crystal and resulted in the formation of nickel-phosphide (Ni2P) alloy. This serves to de-pin the metal Fermi level close to the valence band edge and realizes a record low hole ΦB of merely ~12 meV. The ΦB at the valence band has also been shown to be thickness-dependent, wherein increasing BP multi-layers results in a smaller ΦB due to bandgap energy shrinkage. The integration of hafnium-dioxide high-k gate dielectric additionally enables a significantly improved subthreshold swing (SS ~ 200 mV/dec), surpassing previously reported BP FETs with conventional SiO2 gate dielectric (SS > 1 V/dec).
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Affiliation(s)
- Zhi-Peng Ling
- Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore.,Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore
| | - Soumya Sakar
- NUSNNI-NanoCore, National University of Singapore, 117576 Singapore
| | - Sinu Mathew
- NUSNNI-NanoCore, National University of Singapore, 117576 Singapore
| | - Jun-Tao Zhu
- Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore
| | - K Gopinadhan
- NUSNNI-NanoCore, National University of Singapore, 117576 Singapore
| | - T Venkatesan
- NUSNNI-NanoCore, National University of Singapore, 117576 Singapore
| | - Kah-Wee Ang
- Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore.,Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore
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154
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Tao J, Shen W, Wu S, Liu L, Feng Z, Wang C, Hu C, Yao P, Zhang H, Pang W, Duan X, Liu J, Zhou C, Zhang D. Mechanical and Electrical Anisotropy of Few-Layer Black Phosphorus. ACS NANO 2015; 9:11362-70. [PMID: 26422521 DOI: 10.1021/acsnano.5b05151] [Citation(s) in RCA: 108] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
We combined reflection difference microscopy, electron transport measurements, and atomic force microscopy to characterize the mechanical and electrical anisotropy of few-layer black phosphorus. We were able to identify the lattice orientations of the two-dimensional material and construct suspended structures aligned with specific crystal axes. The approach allowed us to probe the anisotropic mechanical and electrical properties along each lattice axis in separate measurements. We measured the Young's modulus of few-layer black phosphorus to be 58.6 ± 11.7 and 27.2 ± 4.1 GPa in zigzag and armchair directions. The breaking stress scaled almost linearly with the Young's modulus and was measured to be 4.79 ± 1.43 and 2.31 ± 0.71 GPa in the two directions. We have also observed highly anisotropic transport behavior in black phosphorus and derived the conductance anisotropy to be 63.7%. The test results agreed well with theoretical predictions. Our work provided very valuable experimental data and suggested an effective characterization means for future studies on black phosphorus and anisotropic two-dimensional nanomaterials in general.
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Affiliation(s)
| | | | | | | | | | | | | | | | | | | | | | | | - Chongwu Zhou
- Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
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155
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Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model. Nat Commun 2015; 6:8948. [PMID: 26563458 PMCID: PMC4660372 DOI: 10.1038/ncomms9948] [Citation(s) in RCA: 54] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2015] [Accepted: 10/20/2015] [Indexed: 12/22/2022] Open
Abstract
Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses. Conventional models of transistors are not applicable to devices made from nanomaterials because their operation is dominated by gate-dependent transmission through a Schottkybarrier. Here, the authors develop an analytical model and compare it to data taken from ultrathin silicon field-effect transistors.
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156
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Li P, Zhang D, Liu J, Chang H, Sun Y, Yin N. Air-Stable Black Phosphorus Devices for Ion Sensing. ACS APPLIED MATERIALS & INTERFACES 2015; 7:24396-402. [PMID: 26501864 DOI: 10.1021/acsami.5b07712] [Citation(s) in RCA: 41] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Black phosphorus (BP) is one of the most attractive graphene analogues, and its properties make it a promising nanomaterial for chemical sensing. However, mono- and few-layer BP flakes are reported to chemically degrade rapidly upon exposure to ambient conditions. Therefore, little is known about the performance and sensing mechanism of intrinsic BP, and chemical sensing of intrinsic BP with acceptable air stability remains only theoretically explored. Here, we experimentally demonstrated the first air-stable high-performance BP sensor using ionophore coating. Ionophore-encapsulated BP demonstrated significantly improved air stability. Its performance and sensing mechanism for trace ion detection were systematically investigated. The BP sensors were able to realize multiplex ion detection with superb selectivity, and sensitive to Pb(2+) down to 1 ppb. Additionally, the time constant for ion adsorption extracted was only 5 s. The detection limit and response rate of BP were both superior to those of graphene based sensors. Moreover, heavy metal ions can be effectively detected over a wide range of concentration with BP conductance change following the Langmuir isotherm for molecules adsorption on surface. The simplicity of this ionophore-encapsulate approach provides a route for achieving air-stable intrinsic black phosphorus sensors that may stimulate further fundamental research and potential applications.
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Affiliation(s)
- Peng Li
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments, Tsinghua University , Beijing 100084, China
| | - Dongzhi Zhang
- College of Information and Control Engineering, China University of Petroleum (East China) , Qingdao 266580, China
| | - Jingjing Liu
- College of Information and Control Engineering, China University of Petroleum (East China) , Qingdao 266580, China
| | - Hongyan Chang
- College of Information and Control Engineering, China University of Petroleum (East China) , Qingdao 266580, China
| | - Yan'e Sun
- College of Information and Control Engineering, China University of Petroleum (East China) , Qingdao 266580, China
| | - Nailiang Yin
- College of Information and Control Engineering, China University of Petroleum (East China) , Qingdao 266580, China
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157
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Abstract
The recent isolation of atomically thin black phosphorus by mechanical exfoliation of bulk layered crystals has triggered an unprecedented interest, even higher than that raised by the first works on graphene and other two-dimensionals, in the nanoscience and nanotechnology community. In this Perspective, we critically analyze the reasons behind the surge of experimental and theoretical works on this novel two-dimensional material. We believe that the fact that black phosphorus band gap value spans over a wide range of the electromagnetic spectrum (interesting for thermal imaging, thermoelectrics, fiber optics communication, photovoltaics, etc.) that was not covered by any other two-dimensional material isolated to date, its high carrier mobility, its ambipolar field-effect, and its rather unusual in-plane anisotropy drew the attention of the scientific community toward this two-dimensional material. Here, we also review the current advances, the future directions and the challenges in this young research field.
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Affiliation(s)
- Andres Castellanos-Gomez
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA Nanociencia) , Campus de Cantoblanco, E-28049 Madrid, Spain
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158
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Carvalho A, Neto AHC. Phosphorene: Overcoming the Oxidation Barrier. ACS CENTRAL SCIENCE 2015; 1:289-91. [PMID: 27162985 PMCID: PMC4827519 DOI: 10.1021/acscentsci.5b00304] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Affiliation(s)
- Alexandra Carvalho
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Signapore
| | - Antonio H. Castro Neto
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Signapore
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159
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Miao J, Zhang S, Cai L, Scherr M, Wang C. Ultrashort Channel Length Black Phosphorus Field-Effect Transistors. ACS NANO 2015; 9:9236-9243. [PMID: 26277886 DOI: 10.1021/acsnano.5b04036] [Citation(s) in RCA: 62] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 μA/μm) and transconductance (70 μS/μm) at a VDS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on-off current ratio of 10(2) even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al2O3 gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.
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Affiliation(s)
- Jinshui Miao
- Electrical and Computer Engineering, Michigan State University , East Lansing, Michigan 48824, United States
| | - Suoming Zhang
- Electrical and Computer Engineering, Michigan State University , East Lansing, Michigan 48824, United States
| | - Le Cai
- Electrical and Computer Engineering, Michigan State University , East Lansing, Michigan 48824, United States
| | - Martin Scherr
- Electrical and Computer Engineering, Michigan State University , East Lansing, Michigan 48824, United States
| | - Chuan Wang
- Electrical and Computer Engineering, Michigan State University , East Lansing, Michigan 48824, United States
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160
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Jia J, Jang SK, Lai S, Xu J, Choi YJ, Park JH, Lee S. Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties. ACS NANO 2015; 9:8729-36. [PMID: 26301840 DOI: 10.1021/acsnano.5b04265] [Citation(s) in RCA: 81] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Affiliation(s)
| | | | | | | | - Young Jin Choi
- Department of NanoTechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747, Korea
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161
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Kim JS, Jeon PJ, Lee J, Choi K, Lee HS, Cho Y, Lee YT, Hwang DK, Im S. Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching. NANO LETTERS 2015; 15:5778-5783. [PMID: 26274095 DOI: 10.1021/acs.nanolett.5b01746] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We have fabricated dual gate field effect transistors (FETs) with 12 nm-thin black phosphorus (BP) channel on glass substrate, where our BP FETs have a patterned-gate architecture with 30 nm-thick Al2O3 dielectrics on top and bottom of a BP channel. Top gate dielectric has simultaneously been used as device encapsulation layer, controlling the threshold voltage of FETs as well when FETs mainly operate under bottom gate bias. Bottom, top, and dual gate-controlling mobilities were estimated to be 277, 92, and 213 cm(2)/V s, respectively. Maximum ON-current was measured to be ∼5 μA at a drain voltage of -0.1 V but to be as high as ∼50 μA at -1 V, while ON/OFF current ratio appeared to be 3.6 × 10(3) V. As a result, our dual gate BP FETs demonstrate organic light emitting diode (OLED) switching for green and blue OLEDs, also demonstrating NOR logic functions by separately using top- and bottom-input.
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Affiliation(s)
- Jin Sung Kim
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Pyo Jin Jeon
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Junyeong Lee
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Kyunghee Choi
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Hee Sung Lee
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Youngsuk Cho
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
| | - Young Tack Lee
- Center for Optoelectronic Materials and Devices Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791, Korea
| | - Do Kyung Hwang
- Center for Optoelectronic Materials and Devices Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791, Korea
| | - Seongil Im
- Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
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162
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Wang F, Wang Z, Wang Q, Wang F, Yin L, Xu K, Huang Y, He J. Synthesis, properties and applications of 2D non-graphene materials. NANOTECHNOLOGY 2015; 26:292001. [PMID: 26134271 DOI: 10.1088/0957-4484/26/29/292001] [Citation(s) in RCA: 32] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
As an emerging class of new materials, two-dimensional (2D) non-graphene materials, including layered and non-layered, and their heterostructures are currently attracting increasing interest due to their promising applications in electronics, optoelectronics and clean energy. In contrast to traditional semiconductors, such as Si, Ge and III-V group materials, 2D materials show significant merits of ultrathin thickness, very high surface-to-volume ratio, and high compatibility with flexible devices. Owing to these unique properties, while scaling down to ultrathin thickness, devices based on these materials as well as artificially synthetic heterostructures exhibit novel and surprising functions and performances. In this review, we aim to provide a summary on the state-of-the-art research activities on 2D non-graphene materials. The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy. Moreover, the review is concluded with some perspectives on the future developments in this field.
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Affiliation(s)
- Feng Wang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China. University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing 100049, People's Republic of China
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163
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Abstract
Phosphorene, the single- or few-layer form of black phosphorus, was recently rediscovered as a two-dimensional layered material holding great promise for applications in electronics and optoelectronics. Research into its fundamental properties and device applications has since seen exponential growth. In this Perspective, we review recent progress in phosphorene research, touching upon topics on fabrication, properties, and applications; we also discuss challenges and future research directions. We highlight the intrinsically anisotropic electronic, transport, optoelectronic, thermoelectric, and mechanical properties of phosphorene resulting from its puckered structure in contrast to those of graphene and transition-metal dichalcogenides. The facile fabrication and novel properties of phosphorene have inspired design and demonstration of new nanodevices; however, further progress hinges on resolutions to technical obstructions like surface degradation effects and nonscalable fabrication techniques. We also briefly describe the latest developments of more sophisticated design concepts and implementation schemes that address some of the challenges in phosphorene research. It is expected that this fascinating material will continue to offer tremendous opportunities for research and development for the foreseeable future.
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Affiliation(s)
- Liangzhi Kou
- †Integrated Materials Design Centre (IMDC), School of Chemical Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Changfeng Chen
- ‡Department of Physics and Astronomy and High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States
| | - Sean C Smith
- †Integrated Materials Design Centre (IMDC), School of Chemical Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
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164
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Ge S, Li C, Zhang Z, Zhang C, Zhang Y, Qiu J, Wang Q, Liu J, Jia S, Feng J, Sun D. Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation. NANO LETTERS 2015; 15:4650-4656. [PMID: 26039361 DOI: 10.1021/acs.nanolett.5b01409] [Citation(s) in RCA: 64] [Impact Index Per Article: 7.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Black phosphorus has recently emerged as a promising material for high-performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap, and anisotropic electronic properties. Dynamical evolution of photoexcited carriers and the induced transient change of electronic properties are critical for materials' high-field performance but remain to be explored for black phosphorus. In this work, we perform angle-resolved transient reflection spectroscopy to study the dynamical evolution of anisotropic properties of black phosphorus under photoexcitation. We find that the anisotropy of reflectivity is enhanced in the pump-induced quasi-equilibrium state, suggesting an extraordinary enhancement of the anisotropy in dynamical conductivity in hot carrier dominated regime. These results raise attractive possibilities of creating high-field, angle-sensitive electronic, optoelectronic, and remote sensing devices exploiting the dynamical electronic anisotropy with black phosphorus.
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Affiliation(s)
- Shaofeng Ge
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- ‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
| | - Chaokai Li
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- ‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
| | - Zhiming Zhang
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- ‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
| | - Chenglong Zhang
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- ‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
| | - Yudao Zhang
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- ‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
| | - Jun Qiu
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- ‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
| | - Qinsheng Wang
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- ‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
| | - Junku Liu
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- §Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Shuang Jia
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- ‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
| | - Ji Feng
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- ‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
| | - Dong Sun
- †International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- ‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
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165
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Schwierz F, Pezoldt J, Granzner R. Two-dimensional materials and their prospects in transistor electronics. NANOSCALE 2015; 7:8261-8283. [PMID: 25898786 DOI: 10.1039/c5nr01052g] [Citation(s) in RCA: 180] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material for electronic devices, in particular, transistors. While graphene transistors are still on the agenda, researchers have extended their work to two-dimensional materials beyond graphene and the number of two-dimensional materials under examination has literally exploded recently. Meanwhile several hundreds of different two-dimensional materials are known, a substantial part of them is considered useful for transistors, and experimental transistors with channels of different two-dimensional materials have been demonstrated. In spite of the rapid progress in the field, the prospects of two-dimensional transistors still remain vague and optimistic opinions face rather reserved assessments. The intention of the present paper is to shed more light on the merits and drawbacks of two-dimensional materials for transistor electronics and to add a few more facets to the ongoing discussion on the prospects of two-dimensional transistors. To this end, we compose a wish list of properties for a good transistor channel material and examine to what extent the two-dimensional materials fulfill the criteria of the list. The state-of-the-art two-dimensional transistors are reviewed and a balanced view of both the pros and cons of these devices is provided.
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Affiliation(s)
- F Schwierz
- Institut für Mikro- und Nanoelektronik, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany.
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166
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Buscema M, Island JO, Groenendijk DJ, Blanter SI, Steele GA, van der Zant HSJ, Castellanos-Gomez A. Photocurrent generation with two-dimensional van der Waals semiconductors. Chem Soc Rev 2015; 44:3691-718. [DOI: 10.1039/c5cs00106d] [Citation(s) in RCA: 641] [Impact Index Per Article: 71.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
We review photodetectors based on transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.
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Affiliation(s)
- Michele Buscema
- Kavli Institute of Nanoscience
- Delft University of Technology
- Delft
- The Netherlands
| | - Joshua O. Island
- Kavli Institute of Nanoscience
- Delft University of Technology
- Delft
- The Netherlands
| | - Dirk J. Groenendijk
- Kavli Institute of Nanoscience
- Delft University of Technology
- Delft
- The Netherlands
| | - Sofya I. Blanter
- Kavli Institute of Nanoscience
- Delft University of Technology
- Delft
- The Netherlands
| | - Gary A. Steele
- Kavli Institute of Nanoscience
- Delft University of Technology
- Delft
- The Netherlands
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