Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses

Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation

Electronic excitation induced stress and force may provide a new route to manipulate the structure of materials using ultrafast lasers.

Direct measurements of multi-photon induced nonlinear lattice dynamics in semiconductors via time-resolved x-ray scattering

Nonlinear optical phenomena in semiconductors present several fundamental problems in modern optics that are of great importance for the development of optoelectronic devices. In particular, the details of photo-induced lattice dynamics at early time-scales prior to carrier recombination remain poorly understood. We demonstrate the first integrated measurements of both optical and structural, material-dependent quantities while also inferring the bulk impulsive strain profile by using high spatial-resolution time-resolved x-ray scattering (TRXS) on bulk crystalline gallium arsenide. Our findings reveal distinctive laser-fluence dependent crystal lattice responses, which are not described by previous TRXS experiments or models. The initial linear expansion of the crystal upon laser excitation stagnates at a laser fluence corresponding to the saturation of the free carrier density before resuming expansion in a third regime at higher fluences where two-photon absorption becomes dominant. Our interpretations of the lattice dynamics as nonlinear optical effects are confirmed by numerical simulations and by additional measurements in an n-type semiconductor that allows higher-order nonlinear optical processes to be directly observed as modulations of x-ray diffraction lineshapes.

Initial Atomic Motion Immediately Following Femtosecond-Laser Excitation in Phase-Change Materials

Despite the fact that phase-change materials are widely used for data storage, no consensus exists on the unique mechanism of their ultrafast phase change and its accompanied large and rapid optical change. By using the pump-probe observation method combining a femtosecond optical laser and an x-ray free-electron laser, we substantiate experimentally that, in both GeTe and Ge_{2}Sb_{2}Te_{5} crystals, rattling motion of mainly Ge atoms takes place with keeping the off-center position just after femtosecond-optical-laser irradiation, which eventually leads to a higher symmetry or disordered state. This very initial rattling motion in the undistorted lattice can be related to instantaneous optical change due to the loss of resonant bonding that characterizes GeTe-based phase change materials. Based on the amorphous structure derived by first-principles molecular dynamics simulation, we infer a plausible ultrafast amorphization mechanism via nonmelting.

Carrier-Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Nonthermal Phase Transition in Semiconductors

While being extensively studied as an important physical process to alter exciton population in nanostructures at the fs time scale, carrier multiplication has not been considered seriously as a major mechanism for phase transition. Real-time time-dependent density functional theory study of Ge_{2}Sb_{2}Te_{5} reveals that carrier multiplication can induce an ultrafast phase transition in the solid state despite that the lattice remains cold. The results also unify the experimental findings in other semiconductors for which the explanation remains to be the 30-year old phenomenological plasma annealing model.

Crystallization of Ge2Sb2Te5 thin films by nano- and femtosecond single laser pulse irradiation

The amorphous to crystalline phase transformation of Ge₂Sb₂Te₅ (GST) films by UV nanosecond (ns) and femtosecond (fs) single laser pulse irradiation at the same wavelength is compared. Detailed structural information about the phase transformation is collected by x-ray diffraction and high resolution transmission electron microscopy (TEM). The threshold fluences to induce crystallization are determined for both pulse lengths. A large difference between ns and fs pulse irradiation was found regarding the grain size distribution and morphology of the crystallized films. For fs single pulse irradiated GST thin films, columnar grains with a diameter of 20 to 60 nm were obtained as evidenced by cross-sectional TEM analysis. The local atomic arrangement was investigated by high-resolution Cs-corrected scanning TEM. Neither tetrahedral nor off-octahedral positions of Ge-atoms could be observed in the largely defect-free grains. A high optical reflectivity contrast (~25%) between amorphous and completely crystallized GST films was achieved by fs laser irradiation induced at fluences between 13 and 16 mJ/cm² and by ns laser irradiation induced at fluences between 67 and 130 mJ/cm². Finally, the fluence dependent increase of the reflectivity is discussed in terms of each photon involved into the crystallization process for ns and fs pulses, respectively.

Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp² clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency.

Mapping Carrier Dynamics on Material Surfaces in Space and Time using Scanning Ultrafast Electron Microscopy

Selectively capturing the ultrafast dynamics of charge carriers on materials surfaces and at interfaces is crucial to the design of solar cells and optoelectronic devices. Despite extensive research efforts over the past few decades, information and understanding about surface-dynamical processes, including carrier trapping and recombination remains extremely limited. A key challenge is to selectively map such dynamic processes, a capability that is hitherto impractical by time-resolved laser techniques, which are limited by the laser's relatively large penetration depth and consequently these techniques record mainly bulk information. Such surface dynamics can only be mapped in real space and time by applying four-dimensional (4D) scanning ultrafast electron microscopy (S-UEM), which records snapshots of materials surfaces with nanometer spatial and subpicosecond temporal resolutions. In this method, the secondary electron (SE) signal emitted from the sample's surface is extremely sensitive to the surface dynamics and is detected in real time. In several unique applications, we spatially and temporally visualize the SE energy gain and loss, the charge carrier dynamics on the surface of InGaN nanowires and CdSe single crystal and its powder film. We also discuss the mechanisms for the observed dynamics, which will be the foundation for future potential applications of S-UEM to a wide range of studies on material surfaces and device interfaces.

Imaging-based amplitude laser beam shaping for material processing by 2D reflectivity tuning of a spatial light modulator

We have demonstrated an imaging-based amplitude laser-beam-shaping technique for material processing by 2D reflectivity tuning of a spatial light modulator. Intensity masks with 256 gray levels were designed to shape the input laser beam in the outline profile and inside intensity distribution. Squared and circular flattop beam shapes were obtained at the diffractive near-field and then reconstructed at an image plane of an f-theta lens (f∼100  mm). The observed intensity distribution inside the beam-shaping geometry was much more even than using binary masks. The ablation footprint well matches the desired beam shape.

Picosecond x-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons

Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the Poisson ratio drives transverse motion, resulting in the creation of shear waves without the need for an indirect process such as mode conversion at an interface. Using the same excitation geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acoustic oscillations at frequencies of several GHz.

Femtosecond laser nanowelding of silver nanowires for transparent conductive electrodes

Femtosecond laser irradiation enables local crystalline nanojoining of silver nanowires with minimizing thermal damage on flexible substrates.

Ablation dynamics of Co/ZnS targets under double pulse femtosecond laser irradiation

The ablation dynamics of Co/ZnS is highly sensitive to the details of an ultrafast laser pulse irradiation sequence.

Time-resolved observation of band-gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide

Femtosecond X-ray irradiation of solids excites energetic photoelectrons that thermalize on a timescale of a few hundred femtoseconds. The thermalized electrons exchange energy with the lattice and heat it up. Experiments with X-ray free-electron lasers have unveiled so far the details of the electronic thermalization. In this work we show that the data on transient optical reflectivity measured in GaAs irradiated with femtosecond X-ray pulses can be used to follow electron-lattice relaxation up to a few tens of picoseconds. With a dedicated theoretical framework, we explain the so far unexplained reflectivity overshooting as a result of band-gap shrinking. We also obtain predictions for a timescale of electron-lattice thermalization, initiated by conduction band electrons in the temperature regime of a few eVs. The conduction and valence band carriers were then strongly non-isothermal. The presented scheme is of general applicability and can stimulate further studies of relaxation within X-ray excited narrow band-gap semiconductors.

Femtosecond Laser-Controlled Tip-to-Tip Assembly and Welding of Gold Nanorods

Directed assembly of gold nanorods through the use of dithiolated molecular linkers is one of the most efficient methodologies for the morphologically controlled tip-to-tip assembly of this type of anisotropic nanocrystals. However, in a direct analogy to molecular polymerization synthesis, this process is characterized by difficulties in chain-growth control over nanoparticle oligomers. In particular, it is nearly impossible to favor the formation of one type of oligomer, making the methodology hard to use for actual applications in nanoplasmonics. We propose here a light-controlled synthetic procedure that allows obtaining selected plasmonic oligomers in high yield and with reaction times in the scale of minutes by irradiation with low fluence near-infrared (NIR) femtosecond laser pulses. Selective inhibition of the formation of gold nanorod n-mers (trimers) with a longitudinal localized surface plasmon in resonance with a 800 nm Ti:sapphire laser, allowed efficient trapping of the (n - 1)-mers (dimers) by hot spot mediated photothermal decomposition of the interparticle molecular linkers. Laser irradiation at higher energies produced near-field enhancement at the interparticle gaps, which is large enough to melt gold nanorod tips, offering a new pathway toward tip-to-tip welding of gold nanorod oligomers with a plasmonic response at the NIR. Thorough optical and electron microscopy characterization indicates that plasmonic oligomers can be selectively trapped and welded, which has been analyzed in terms of a model that predicts with reasonable accuracy the relative concentrations of the main plasmonic species.

Direct welding of glass and metal by 1 kHz femtosecond laser pulses

In the welding process between similar or dissimilar materials, inserting an intermediate layer and pressure assistance are usually thought to be necessary. In this paper, the direct welding between alumina-silicate glass and metal (aluminum, copper, and steel), under exposure from 1 kHz femtosecond laser pulses without any auxiliary processes, is demonstrated. The micron/nanometer-sized metal particles induced by laser ablation were considered to act as the adhesive in the welding process. The welding parameters were optimized by varying the pulse energy and the translation velocity of the sample. The shear joining strength characterized by a shear force testing equipment was as high as 2.34 MPa. This direct bonding technology has potential for applications in medical devices, sensors, and photovoltaic devices.

Femtosecond structural transformation of phase-change materials far from equilibrium monitored by coherent phonons

Multicomponent chalcogenides, such as quasi-binary GeTe-Sb2Te3 alloys, are widely used in optical data storage media in the form of rewritable optical discs. Ge2Sb2Te5 (GST) in particular has proven to be one of the best-performing materials, whose reliability allows more than 10(6) write-erase cycles. Despite these industrial applications, the fundamental kinetics of rapid phase change in GST remain controversial, and active debate continues over the ultimate speed limit. Here we explore ultrafast structural transformation in a photoexcited GST superlattice, where GeTe and Sb2Te3 are spatially separated, using coherent phonon spectroscopy with pump-pump-probe sequences. By analysing the coherent phonon spectra in different time regions, complex structural dynamics upon excitation are observed in the GST superlattice (but not in GST alloys), which can be described as the mixing of Ge sites from two different coordination environments. Our results suggest the possible applicability of GST superlattices for ultrafast switching devices.

Transient Structures and Possible Limits of Data Recording in Phase-Change Materials

Phase-change materials (PCMs) represent the leading candidates for universal data storage devices, which exploit the large difference in the physical properties of their transitional lattice structures. On a nanoscale, it is fundamental to determine their performance, which is ultimately controlled by the speed limit of transformation among the different structures involved. Here, we report observation with atomic-scale resolution of transient structures of nanofilms of crystalline germanium telluride, a prototypical PCM, using ultrafast electron crystallography. A nonthermal transformation from the initial rhombohedral phase to the cubic structure was found to occur in 12 ps. On a much longer time scale, hundreds of picoseconds, equilibrium heating of the nanofilm is reached, driving the system toward amorphization, provided that high excitation energy is invoked. These results elucidate the elementary steps defining the structural pathway in the transformation of crystalline-to-amorphous phase transitions and describe the essential atomic motions involved when driven by an ultrafast excitation. The establishment of the time scales of the different transient structures, as reported here, permits determination of the possible limit of performance, which is crucial for high-speed recording applications of PCMs.

Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics

We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

Super resolution methodology based on temperature dependent Raman scattering

The recent advances in far-field super-resolution (SR) microscopy rely on, and therefore are limited by the ability to control the fluorescence of label molecules. We suggest a new, label-free, far-field SR microscopy based on temperature dependence of Raman scattering. Here, we present simulation and experimental characterization of the method. In an ultrafast pump-probe scheme, a spatial temperature profile is optically excited throughout the diffraction-limited spot; the Raman spectrum is probed with an overlapping laser. Thermally induced shifts, recorded in a specific spectral region of interest (ROI), enable spatial discrimination between areas of different temperature. Our simulations show spatial resolution that surpasses the diffraction limit by more than a factor of 2. Our method is compatible with material characterization in ambient, vacuum and liquid, thin and thick samples alike.

High acoustic strains in Si through ultrafast laser excitation of Ti thin-film transducers

The role of thin-film metal transducers in ultrafast laser-generated longitudinal acoustic phonons in Si (100) monocrystal substrates is investigated. For this purpose degenerate femtosecond pump-probe transient reflectivity measurements are performed probing the Brillouin scattering of laser photons from phonons. The influence of the metallic electron-phonon coupling factor, acoustical impedance and film thickness is examined. An optical transfer matrix method for thin films is applied to extract the net acoustic strain relative strength for the various transducer cases, taking into account the experimental probing efficiency. In addition, a theoretical thermo-mechanical approach based on the combination of a revised two-temperature model and elasticity theory is applied and supports the experimental findings. The results show highly efficient generation of acoustic phonons in Si when Ti transducers are used. This demonstrates the crucial role of the transducer's high electron-phonon coupling constant and high compressive yield strength, as well as strong acoustical impedance matching with the semiconductor substrate.

Ultrafast electron dynamics in epitaxial graphene investigated with time- and angle-resolved photoemission spectroscopy

In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the π band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.

Super-resolution in label-free photomodulated reflectivity

We demonstrate a new, label-free, far-field super-resolution method based on an ultrafast pump-probe scheme oriented toward nanomaterial imaging. A focused pump laser excites a diffraction-limited spatial temperature profile, and the nonlinear changes in reflectance are probed. Enhanced spatial resolution is demonstrated with nanofabricated silicon and vanadium dioxide nanostructures. Using an air objective, resolution of 105 nm was achieved, well beyond the diffraction limit for the pump and probe beams and offering a novel kind of dedicated nanoscopy for materials.

Quantum Hooke's law to classify pulse laser induced ultrafast melting

Ultrafast crystal-to-liquid phase transition induced by femtosecond pulse laser excitation is an interesting material's behavior manifesting the complexity of light-matter interaction. There exist two types of such phase transitions: one occurs at a time scale shorter than a picosecond via a nonthermal process mediated by electron-hole plasma formation; the other at a longer time scale via a thermal melting process mediated by electron-phonon interaction. However, it remains unclear what material would undergo which process and why? Here, by exploiting the property of quantum electronic stress (QES) governed by quantum Hooke's law, we classify the transitions by two distinct classes of materials: the faster nonthermal process can only occur in materials like ice having an anomalous phase diagram characterized with dT_m/dP < 0, where T_m is the melting temperature and P is pressure, above a high threshold laser fluence; while the slower thermal process may occur in all materials. Especially, the nonthermal transition is shown to be induced by the QES, acting like a negative internal pressure, which drives the crystal into a “super pressing” state to spontaneously transform into a higher-density liquid phase. Our findings significantly advance fundamental understanding of ultrafast crystal-to-liquid phase transitions, enabling quantitative a priori predictions.

Treating the untreatable in art and heritage materials: ultrafast laser cleaning of "cloth-of-gold"

Laser cleaning provides art and heritage conservators with an alternative means to restore objects when traditional chemical and mechanical methods are not viable. However, long (>nanosecond) laser pulses can cause unwanted damage from photothermal processes and provide limited control over ablation depth. Ultrashort (<picosecond) pulse lasers are emerging as a more appropriate tool for cleaning historic artifacts because of their unique ability to avoid heat- and shock-wave generation, thus minimizing collateral damage of the underlayers, and to remove material with near-nanometer precision. Here we demonstrate the effectiveness of ultrashort pulses by cleaning 19th century military gold braid without any detrimental effects on the gold foil or the underlying silk thread structure. The results are compared with nanosecond-pulse laser treatment that damages the surface structure. By introducing in situ feedback control of the laser ablation via laser-induced breakdown spectroscopy (LIBS) monitoring of the ablated plume, we are able to halt the cleaning process just as the contaminant layer is completely removed. This technique allows ultrafast laser ablation to extend the armory of conservation treatments, enabling restoration of a range of complex and fragile heritage objects previously untreatable by conventional means.

Femtosecond laser fabrication of monolithically integrated microfluidic sensors in glass

Femtosecond lasers have revolutionized the processing of materials, since their ultrashort pulse width and extremely high peak intensity allows high-quality micro- and nanofabrication of three-dimensional (3D) structures. This unique capability opens up a new route for fabrication of microfluidic sensors for biochemical applications. The present paper presents a comprehensive review of recent advancements in femtosecond laser processing of glass for a variety of microfluidic sensor applications. These include 3D integration of micro-/nanofluidic, optofluidic, electrofluidic, surface-enhanced Raman-scattering devices, in addition to fabrication of devices for microfluidic bioassays and lab-on-fiber sensors. This paper describes the unique characteristics of femtosecond laser processing and the basic concepts involved in femtosecond laser direct writing. Advanced spatiotemporal beam shaping methods are also discussed. Typical examples of microfluidic sensors fabricated using femtosecond lasers are then highlighted, and their applications in chemical and biological sensing are described. Finally, a summary of the technology is given and the outlook for further developments in this field is considered.

Doping effects on ablation enhancement in femtosecond laser irradiation of silicon

We have conducted an experimental investigation on highly efficient femtosecond laser micromachining of silicon through N-type doping. We found that the material removal amount has a close relationship with the doping concentration rather than with the doping types. The amount of material removal was enhanced gradually as doping densities increased. When the doping density reached higher than 10(18) cm(-3), the ablation threshold was considerably reduced, up to 15%-20%. The results of the experiment indicate that the high density of initial free electrons by doping is the fundamental reason for efficiency improvement, and bandgap shrinkage also plays an important role. The electrons are excited more easily from the valance band to the conduction band and acquire higher initial kinetic energy, which then promotes the material ablation process.

Characterization and control of peak intensity distribution at the focus of a spatiotemporally focused femtosecond laser beam

We report on experimental examination of two-photon fluorescence excitation (TPFE) at the focus of a spatially chirped femtosecond laser beam, which reveals an unexpected tilted peak intensity distribution in the focal spot. Our theoretical calculation shows that the tilting of the peak intensity distribution originates from the fact that along the optical axis of objective lens, the spatiotemporally focused pulse reaches its shortest duration exactly at the focal plane. However, when moving away from the optical axis along the direction of spatial chirp of the incident pulse, the pulse reaches its shortest duration either before or after the focal plane, depending on whether the pulse duration is measured above or below the optical axis as well as the sign of the spatial chirp. The tilting of the peak intensity distribution in the focal spot of the spatiotemporally focused femtosecond laser beam can play important roles in applications such as femtosecond laser micromachining and bio-imaging.

Nanoscale heat transfer in direct nanopatterning into gold films by a nanosecond laser pulse

We investigate nanoscale heat transfer and heat-flux overlapping effects in nanopatterning through interactions between interferogram produced by 5-ns laser pulses at 355 nm and gold films. These mechanisms played different roles in direct writing of gold nanolines with different periods. Continuous gold nanolines were produced for large periods, where heat-flux overlapping is too small to effect the laser-metal interactions. Thus, the heat-transfer distance and direct laser-ablation determined the width of resultant gold nanolines. However, gold nanolines consisting of isolated gold nanoparticles were produced for small periods, where the overlapped heat-flux exceeds the threshold for removing or melting gold films.

Laser printing of silicon nanoparticles with resonant optical electric and magnetic responses

Silicon nanoparticles with sizes of a few hundred nanometres exhibit unique optical properties due to their strong electric and magnetic dipole responses in the visible range. Here we demonstrate a novel laser printing technique for the controlled fabrication and precise deposition of silicon nanoparticles. Using femtosecond laser pulses it is possible to vary the size of Si nanoparticles and their crystallographic phase. Si nanoparticles produced by femtosecond laser printing are initially in an amorphous phase (a-Si). They can be converted into the crystalline phase (c-Si) by irradiating them with a second femtosecond laser pulse. The resonance-scattering spectrum of c-Si nanoparticles, compared with that of a-Si nanoparticles, is blue shifted and its peak intensity is about three times higher. Resonant optical responses of dielectric nanoparticles are characterized by accumulation of electromagnetic energy in the excited modes, which can be used for the realization of nanoantennas, nanolasers and metamaterials.

Visualization of carrier dynamics in p(n)-type GaAs by scanning ultrafast electron microscopy

Four-dimensional scanning ultrafast electron microscopy is used to investigate doping- and carrier-concentration-dependent ultrafast carrier dynamics of the in situ cleaved single-crystalline GaAs(110) substrates. We observed marked changes in the measured time-resolved secondary electrons depending on the induced alterations in the electronic structure. The enhancement of secondary electrons at positive times, when the electron pulse follows the optical pulse, is primarily due to an energy gain involving the photoexcited charge carriers that are transiently populated in the conduction band and further promoted by the electron pulse, consistent with a band structure that is dependent on chemical doping and carrier concentration. When electrons undergo sufficient energy loss on their journey to the surface, dark contrast becomes dominant in the image. At negative times, however, when the electron pulse precedes the optical pulse (electron impact), the dynamical behavior of carriers manifests itself in a dark contrast which indicates the suppression of secondary electrons upon the arrival of the optical pulse. In this case, the loss of energy of material's electrons is by collisions with the excited carriers. These results for carrier dynamics in GaAs(110) suggest strong carrier-carrier scatterings which are mirrored in the energy of material's secondary electrons during their migration to the surface. The approach presented here provides a fundamental understanding of materials probed by four-dimensional scanning ultrafast electron microscopy, and offers possibilities for use of this imaging technique in the study of ultrafast charge carrier dynamics in heterogeneously patterned micro- and nanostructured material surfaces and interfaces.

Generation and erasure of femtosecond laser-induced periodic surface structures on nanoparticle-covered silicon by a single laser pulse

We experimentally show that the generation and erasure of femtosecond laser-induced periodic surface structures on nanoparticle-covered silicon inducted by irradiation with a single laser pulse (800 nm, 120 fs, linear polarization) depend on the pulse fluence. We propose that this is due to competition between periodic surface structuring originating from the interference of incident light with surface plasmon polaritons and surface smoothing associated with surface melting. Experimental results are supported by theoretical analysis of transient surface modifications based on combining the two-temperature model and the Drude model.

Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon

The formation of near-wavelength laser-induced periodic surface structures (LIPSS) on silicon upon irradiation with sequences of Ti:sapphire femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied theoretically. For this purpose, the nonlinear generation of conduction band electrons in silicon and their relaxation is numerically calculated using a two-temperature model approach including intrapulse changes of optical properties, transport, diffusion and recombination effects. Following the idea that surface plasmon polaritons (SPP) can be excited when the material turns from semiconducting to metallic state, the "SPP active area" is calculated as function of fluence and double-pulse delay up to several picoseconds and compared to the experimentally observed rippled surface areas. Evidence is presented that multi-photon absorption explains the large increase of the rippled area for temporally overlapping pulses. For longer double-pulse delays, relevant relaxation processes are identified. The results demonstrate that femtosecond LIPSS on silicon are caused by the excitation of SPP and can be controlled by temporal pulse shaping.

Observation of T₂-like coherent optical phonons in epitaxial Ge₂Sb₂Te₅/GaSb(001) films

The phonon spectrum of Ge₂Sb₂Te₅ is a signature of its crystallographic structure and underlies the phase transition process used in memory applications. Epitaxial materials allow coherent optical phonons to be studied in femtosecond anisotropic reflectance measurements. A dominant phonon mode with frequency of 3.4 THz has been observed in epitaxial Ge₂Sb₂Te₅ grown on GaSb(001). The dependence of signal strength upon pump and probe polarization is described by a theory of transient stimulated Raman scattering that accounts for the symmetry of the crystallographic structure through use of the Raman tensor. The 3.4 THz mode has the character of the 3 dimensional T₂ mode expected for the O_h point group, confirming that the underlying crystallographic structure is cubic. New modes are observed in both Ge₂Sb₂Te₅ and GaSb after application of large pump fluences, and are interpreted as 1 and 2 dimensional modes associated with segregation of Sb.

Femtosecond pulsed laser deposition of silicon thin films

: Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposition process and optimise it for the fabrication of high-quality thin films designed for optical and optoelectronic applications.

Effects of Carrier Confinement and Intervalley Scattering on Photoexcited Electron Plasma in Silicon

The ultrafast reflectivity of silicon, excited and probed with femtosecond laser pulses, is studied for different wavelengths and energy densities. The confinement of carriers in a thin surface layer delimited by a nanoscale Si-layered system buried in a Si heavily-doped wafer reduces the critical density of carriers necessary to create the electron plasma by a factor of ten. We performed two types of reflectivity measurements, using either a single beam or two beams. The plasma strongly depends on the photon energy density because of the intervalley scattering of the electrons revealed by two different mechanisms assisted by the electron-phonon interaction. One mechanism leads to a negative differential reflectivity that can be attributed to an induced absorption in X valleys. The other mechanism occurs, when the carrier population is thermalizing and gives rise to a positive differential reflectivity corresponding to Pauli-blocked intervalley gamma to X scattering. These results are important for improving the efficiency of Si light-to-electricity converters, in which there is a possibility of multiplying carriers by nanostructurization of Si.

Lowered threshold energy for femtosecond laser induced optical breakdown in a water based eye model by aberration correction with adaptive optics

In femtosecond laser ophthalmic surgery tissue dissection is achieved by photodisruption based on laser induced optical breakdown. In order to minimize collateral damage to the eye laser surgery systems should be optimized towards the lowest possible energy threshold for photodisruption. However, optical aberrations of the eye and the laser system distort the irradiance distribution from an ideal profile which causes a rise in breakdown threshold energy even if great care is taken to minimize the aberrations of the system during design and alignment. In this study we used a water chamber with an achromatic focusing lens and a scattering sample as eye model and determined breakdown threshold in single pulse plasma transmission loss measurements. Due to aberrations, the precise lower limit for breakdown threshold irradiance in water is still unknown. Here we show that the threshold energy can be substantially reduced when using adaptive optics to improve the irradiance distribution by spatial beam shaping. We found that for initial aberrations with a root-mean-square wave front error of only one third of the wavelength the threshold energy can still be reduced by a factor of three if the aberrations are corrected to the diffraction limit by adaptive optics. The transmitted pulse energy is reduced by 17% at twice the threshold. Furthermore, the gas bubble motions after breakdown for pulse trains at 5 kilohertz repetition rate show a more transverse direction in the corrected case compared to the more spherical distribution without correction. Our results demonstrate how both applied and transmitted pulse energy could be reduced during ophthalmic surgery when correcting for aberrations. As a consequence, the risk of retinal damage by transmitted energy and the extent of collateral damage to the focal volume could be minimized accordingly when using adaptive optics in fs-laser surgery.

The role of light-induced nanostructures in femtosecond laser micromachining with vector and scalar pulses

In this article we compare the results of micromachining of fused silica and silicon with tightly focused scalar (viz., circularly and linearly polarized) and vector (viz., azimuthally and radially polarized) femtosecond laser pulses. We show that drilling with radially polarized pulses produces holes with smoother and better-delineated walls compared with the other polarizations used, whereas linearly polarized pulses can machine 20-nm wide single grooves in fused silica when the electric field of the pulse is aligned perpendicular to the cutting direction. The observed polarization-controlled micromachining is due to the formation of sub-diffraction-limited nanostructures that are optically produced in the multi-pulse irradiation regime.

Light-controlled plasmon switching using hybrid metal-semiconductor nanostructures

We present a proof of concept for the dynamic control over the plasmon resonance frequencies in a hybrid metal-semiconductor nanoshell structure with Ag core and TiO(2) coating. Our method relies on the temporary change of the dielectric function ε of TiO(2) achieved through temporarily generated electron-hole pairs by means of a pump laser pulse. This change in ε leads to a blue shift of the Ag surface plasmon frequency. We choose TiO(2) as the environment of the Ag core because the band gap energy of TiO(2) is larger than the Ag surface plasmon energy of our nanoparticles, which allows the surface plasmon being excited without generating electron-hole pairs in the environment at the same time. We calculate the magnitude of the plasmon resonance shift as a function of electron-hole pair density and obtain shifts up to 126 nm at wavelengths around 460 nm. Using our results, we develop the model of a light-controlled surface plasmon polariton switch.

Ultrafast transitions from solid to liquid and plasma states of graphite induced by x-ray free-electron laser pulses

We used photon pulses from an x-ray free-electron laser to study ultrafast x-ray-induced transitions of graphite from solid to liquid and plasma states. This was accomplished by isochoric heating of graphite samples and simultaneous probing via Bragg and diffuse scattering at high time resolution. We observe that disintegration of the crystal lattice and ion heating of up to 5 eV occur within tens of femtoseconds. The threshold fluence for Bragg-peak degradation is smaller and the ion-heating rate is faster than current x-ray-matter interaction models predict.

Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials

The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory.

Ultrafast changes in lattice symmetry probed by coherent phonons

The electronic and structural properties of a material are strongly determined by its symmetry. Changing the symmetry via a photoinduced phase transition offers new ways to manipulate material properties on ultrafast timescales. However, to identify when and how fast these phase transitions occur, methods that can probe the symmetry change in the time domain are required. Here we show that a time-dependent change in the coherent phonon spectrum can probe a change in symmetry of the lattice potential, thus providing an all-optical probe of structural transitions. We examine the photoinduced structural phase transition in VO(2) and show that, above the phase transition threshold, photoexcitation completely changes the lattice potential on an ultrafast timescale. The loss of the equilibrium-phase phonon modes occurs promptly, indicating a non-thermal pathway for the photoinduced phase transition, where a strong perturbation to the lattice potential changes its symmetry before ionic rearrangement has occurred.

Role of electronic excitation in the amorphization of Ge-Sb-Te alloys

First-principles molecular dynamics simulation reveals the effects of electronic excitation in the amorphization of Ge-Sb-Te. The excitation makes the phase change an element-selective process, lowers the critical amorphization temperature considerably, for example, to below 700 K at a 9% excitation, and reduces the atomic diffusion coefficient with respect to that of melt by at least 1 order of magnitude. Noticeably, the resulting structure has fewer wrong bonds and significantly increased phase-change reversibility. Our results point to a new direction in manipulating ultrafast phase-change processes with improved controllability.