Single-shot read-out of an individual electron spin in a quantum dot

Nanoscale broadband transmission lines for spin qubit control

The intense interest in spin-based quantum information processing has caused an increasing overlap between the two traditionally distinct disciplines of magnetic resonance and nanotechnology. In this work we discuss rigorous design guidelines to integrate microwave circuits with charge-sensitive nanostructures, and describe how to simulate such structures accurately and efficiently. We present a new design for an on-chip, broadband, nanoscale microwave line that optimizes the magnetic field used to drive a spin-based quantum bit (or qubit) while minimizing the disturbance to a nearby charge sensor. This new structure was successfully employed in a single-spin qubit experiment, and shows that the simulations accurately predict the magnetic field values even at frequencies as high as 30 GHz.

Transport through graphene quantum dots

We review transport experiments on graphene quantum dots and narrow graphene constrictions. In a quantum dot, electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. The recently isolated two-dimensional carbon allotrope graphene is an interesting host to study quantum phenomena, due to its novel electronic properties and the expected weak interaction of the electron spin with the material. Graphene quantum dots are fabricated by etching mono-layer flakes into small islands (diameter 60-350 nm) with narrow connections to contacts (width 20-75 nm), serving as tunneling barriers for transport spectroscopy. Electron confinement in graphene quantum dots is observed by measuring Coulomb blockade and transport through excited states, a manifestation of quantum confinement. Measurements in a magnetic field perpendicular to the sample plane allowed to identify the regime with only a few charge carriers in the dot (electron-hole transition), and the crossover to the formation of the graphene specific zero-energy Landau level at high fields. After rotation of the sample into parallel magnetic field orientation, Zeeman spin splitting with a g-factor of g ≈ 2 is measured. The filling sequence of subsequent spin states is similar to what was found in GaAs and related to the non-negligible influence of exchange interactions among the electrons.

Physics of lateral triple quantum-dot molecules with controlled electron numbers

We review the recent progress in theory and experiments with lateral triple quantum dots with controlled electron numbers down to one electron in each dot. The theory covers electronic and spin properties as a function of topology, number of electrons, gate voltage and external magnetic field. The orbital Hund's rules and Nagaoka ferromagnetism, magnetic frustration and chirality, interplay of quantum interference and electron-electron interactions and geometrical phases are described and related to charging and transport spectroscopy. Fabrication techniques and recent experiments are covered, as well as potential applications of triple quantum-dot molecule in coherent control, spin manipulation and quantum computation.

Josephson current through interacting double quantum dots with spin-orbit coupling

We study the effect of Rashba spin-orbit interaction on the Josephson current through a double quantum dot in the presence of Coulomb repulsion. In particular, we describe the characteristic effects on the magnetic field-induced singlet-triplet transition in the molecular regime. Exploring the whole parameter space, we analyze the effects of the device asymmetry, the orientation of the applied magnetic field with respect to the spin-orbit interaction, and finite temperatures. We find that at finite temperatures the orthogonal component of the spin-orbit interaction exhibits a similar effect to the Coulomb interaction inducing the occurrence of a π-phase at particle-hole symmetry. This provides a new route to the experimental observability of the π-phase in multi-level quantum dots.

Quantum entanglement and spin control in silicon nanocrystal

Selective coherence control and electrically mediated exchange coupling of single electron spin between triplet and singlet states using numerically derived optimal control of proton pulses is demonstrated. We obtained spatial confinement below size of the Bohr radius for proton spin chain FWHM. Precise manipulation of individual spins and polarization of electron spin states are analyzed via proton induced emission and controlled population of energy shells in pure ²⁹Si nanocrystal. Entangled quantum states of channeled proton trajectories are mapped in transverse and angular phase space of ²⁹Si axial channel alignment in order to avoid transversal excitations. Proton density and proton energy as impact parameter functions are characterized in single particle density matrix via discretization of diagonal and nearest off-diagonal elements. We combined high field and low densities (1 MeV/92 nm) to create inseparable quantum state by superimposing the hyperpolarizationed proton spin chain with electron spin of ²⁹Si. Quantum discretization of density of states (DOS) was performed by the Monte Carlo simulation method using numerical solutions of proton equations of motion. Distribution of gaussian coherent states is obtained by continuous modulation of individual spin phase and amplitude. Obtained results allow precise engineering and faithful mapping of spin states. This would provide the effective quantum key distribution (QKD) and transmission of quantum information over remote distances between quantum memory centers for scalable quantum communication network. Furthermore, obtained results give insights in application of channeled protons subatomic microscopy as a complete versatile scanning-probe system capable of both quantum engineering of charged particle states and characterization of quantum states below diffraction limit linear and in-depth resolution.

PACS numbers: 03.65.Ud, 03.67.Bg, 61.85.+p, 67.30.hj

A single-atom electron spin qubit in silicon

A single atom is the prototypical quantum system, and a natural candidate for a quantum bit, or qubit--the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the nitrogen-vacancy-centre point defect. Solid-state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger-scale quantum processors. Coherent control of spin qubits has been achieved in lithographically defined double quantum dots in both GaAs (refs 3-5) and Si (ref. 6). However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent in atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot read-out. We use electron spin resonance to drive Rabi oscillations, and a Hahn echo pulse sequence reveals a spin coherence time exceeding 200 µs. This time should be even longer in isotopically enriched (28)Si samples. Combined with a device architecture that is compatible with modern integrated circuit technology, the electron spin of a single phosphorus atom in silicon should be an excellent platform on which to build a scalable quantum computer.

Spin-orbit-mediated manipulation of heavy-hole spin qubits in gated semiconductor nanodevices

A novel spintronic nanodevice is proposed that is able to manipulate the single heavy-hole spin state in a coherent manner. It can act as a single quantum logic gate. The heavy-hole spin transformations are realized by transporting the hole around closed loops defined by metal gates deposited on top of the nanodevice. The device exploits Dresselhaus spin-orbit interaction, which translates the spatial motion of the hole into a rotation of the spin. The proposed quantum gate operates on subnanosecond time scales and requires only the application of a weak static voltage which allows for addressing heavy-hole spin qubits individually. Our results are supported by quantum mechanical time-dependent calculations within the four-band Luttinger-Kohn model.

Theory of spin relaxation in two-electron lateral coupled quantum dots

A global quantitative picture of the phonon-induced two-electron spin relaxation in GaAs double quantum dots is presented using highly accurate numerics. Wide regimes of interdot coupling, magnetic field magnitude and orientation, and detuning are explored in the presence of a nuclear bath. Most important, the giant magnetic anisotropy of the singlet-triplet relaxation can be controlled by detuning switching the principal anisotropy axes: a protected state becomes unprotected upon detuning and vice versa. It is also established that nuclear spins can dominate spin relaxation for unpolarized triplets even at high magnetic fields, contrary to common belief.

Spin-orbit-induced strong coupling of a single spin to a nanomechanical resonator

We theoretically investigate the deflection-induced coupling of an electron spin to vibrational motion due to spin-orbit coupling in suspended carbon nanotube quantum dots. Our estimates indicate that, with current capabilities, a quantum dot with an odd number of electrons can serve as a realization of the Jaynes-Cummings model of quantum electrodynamics in the strong-coupling regime. A quantized flexural mode of the suspended tube plays the role of the optical mode and we identify two distinct two-level subspaces, at small and large magnetic field, which can be used as qubits in this setup. The strong intrinsic spin-mechanical coupling allows for detection, as well as manipulation of the spin qubit, and may yield enhanced performance of nanotubes in sensing applications.

Cryogenic high-frequency readout and control platform for spin qubits

We have developed a cryogenic platform for the control and readout of spin qubits that comprises a high density of dc and radio frequency sample interconnects based on a set of coupled printed circuit boards. The modular setup incorporates 24 filtered dc lines, 14 control and readout lines with bandwidth from dc to above 6 GHz, and 2 microwave connections for excitation to 40 GHz. We report the performance of this platform, including signal integrity and crosstalk measurements and discuss design criteria for constructing sample interconnect technology needed for multi-qubit devices.

Hole spin relaxation in Ge-Si core-shell nanowire qubits

Controlling decoherence is the biggest challenge in efforts to develop quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among implementations of solid-state quantum bits, but their strong coupling to nuclear spins produces high decoherence rates. Group IV semiconductors, on the other hand, have relatively low nuclear spin densities, making them an attractive platform for spin quantum bits. However, device fabrication remains a challenge, particularly with respect to the control of materials and interfaces. Here, we demonstrate state preparation, pulsed gate control and charge-sensing spin readout of hole spins confined in a Ge-Si core-shell nanowire. With fast gating, we measure T(1) spin relaxation times of up to 0.6 ms in coupled quantum dots at zero magnetic field. Relaxation time increases as the magnetic field is reduced, which is consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.

Embracing the quantum limit in silicon computing

Quantum computers hold the promise of massive performance enhancements across a range of applications, from cryptography and databases to revolutionary scientific simulation tools. Such computers would make use of the same quantum mechanical phenomena that pose limitations on the continued shrinking of conventional information processing devices. Many of the key requirements for quantum computing differ markedly from those of conventional computers. However, silicon, which plays a central part in conventional information processing, has many properties that make it a superb platform around which to build a quantum computer.

Charge sensing of precisely positioned p donors in Si

Real-time sensing of (spin-dependent) single-electron tunneling is fundamental to electrical readout of qubit states in spin quantum computing. Here, we demonstrate the feasibility of detecting such single-electron tunneling events using an atomically planar charge sensing layout, which can be readily integrated in scalable quantum computing architectures with phosphorus-donor-based spin qubits in silicon (Si:P). Using scanning tunneling microscopy (STM) lithography on a Si(001) surface, we patterned a single-electron transistor (SET), both tunnel and electrostatically coupled to a coplanar ultrasmall quantum dot, the latter consisting of approximately four P donors. Charge transitions of the quantum dot could be detected both in time-averaged and single-shot current response of the SET. Single electron tunneling between the quantum dot and the SET island on a time-scale (τ ∼ ms) two-orders-of-magnitude faster than the spin-lattice relaxation time of a P donor in Si makes this device geometry suitable for projective readout of Si:P spin qubits. Crucial to scalability is the ability to reproducibly achieve sufficient electron tunnel rates and charge sensitivity of the SET. The inherent atomic-scale control of STM lithography bodes extremely well to precisely optimize both of these parameters.

Interlevel cascade transition in electrically confined quantum wire arrays

Vertical stacks of electrically confined quantum wires were demonstrated in devices with large areas. Multiple current plateaus and strong differential conductance oscillations were observed at above liquid nitrogen temperatures because of interlevel cascade transition of carriers. Our simulation results for charge transport, as well as interlevel infrared photoresponse red-shift, due to lateral electric field confinement show good agreement with experimental data.

Quantum control in spintronics

Superposition and entanglement are uniquely quantum phenomena. Superposition incorporates a phase that contains information surpassing any classical mixture. Entanglement offers correlations between measurements in quantum systems that are stronger than any that would be possible classically. These give quantum computing its spectacular potential, but the implications extend far beyond quantum information processing. Early applications may be found in entanglement-enhanced sensing and metrology. Quantum spins in condensed matter offer promising candidates for investigating and exploiting superposition and entanglement, and enormous progress is being made in quantum control of such systems. In gallium arsenide (GaAs), individual electron spins can be manipulated and measured, and singlet-triplet states can be controlled in double-dot structures. In silicon, individual electron spins can be detected by ionization of phosphorus donors, and information can be transferred from electron spins to nuclear spins to provide long memory times. Electron and nuclear spins can be manipulated in nitrogen atoms incarcerated in fullerene molecules, which in turn can be assembled in ordered arrays. Spin states of charged nitrogen vacancy centres in diamond can be manipulated and read optically. Collective spin states in a range of materials systems offer scope for holographic storage of information. Conditions are now excellent for implementing superposition and entanglement in spintronic devices, thereby opening up a new era of quantum technologies.

Single-shot correlations and two-qubit gate of solid-state spins

Measurement of coupled quantum systems plays a central role in quantum information processing. We have realized independent single-shot read-out of two electron spins in a double quantum dot. The read-out method is all-electrical, cross-talk between the two measurements is negligible, and read-out fidelities are ~86% on average. This allows us to directly probe the anticorrelations between two spins prepared in a singlet state and to demonstrate the operation of the two-qubit exchange gate on a complete set of basis states. The results provide a possible route to the realization and efficient characterization of multiqubit quantum circuits based on single quantum dot spins.

Integrated logic circuits using single-atom transistors

Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal-oxide-semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch.

Coplanar stripline antenna design for optically detected magnetic resonance on semiconductor quantum dots

We report on the development and testing of a coplanar stripline antenna that is designed for integration in a magneto-photoluminescence experiment to allow coherent control of individual electron spins confined in single self-assembled semiconductor quantum dots. We discuss the design criteria for such a structure which is multi-functional in the sense that it serves not only as microwave delivery but also as electrical top gate and shadow mask for the single quantum dot spectroscopy. We present test measurements on hydrogenated amorphous silicon, demonstrating electrically detected magnetic resonance using the in-plane component of the oscillating magnetic field created by the coplanar stripline antenna necessary due to the particular geometry of the quantum dot spectroscopy. From reference measurements using a commercial electron spin resonance setup in combination with finite element calculations simulating the field distribution in the structure, we obtain a magnetic field of 0.12 mT at the position where the quantum dots would be integrated into the device. The corresponding π-pulse time of ≈0.5 μs meets the requirements set by the high sensitivity optical spin read-out scheme developed for the quantum dot.

Electronic properties of graphene nanostructures

In this review, recent developments in the fabrication and understanding of the electronic properties of graphene nanostructures are discussed. After a brief overview of the structure of graphene and the two-dimensional transport properties, the focus is put on graphene constrictions, quantum dots and double quantum dots. For constrictions with a width below 100 nm, the current through the constriction is strongly suppressed for a certain back gate voltage range, related to the so-called transport gap. This transport gap is due to the formation of localized puddles in the constriction, and its size depends strongly on the constriction width. Such constrictions can be used to confine charge carriers in quantum dots, leading to Coulomb blockade effects.

Transport spectroscopy of an impurity spin in a carbon nanotube double quantum dot

We make use of spin selection rules to investigate the electron spin system of a carbon nanotube double quantum dot. Measurements of the electron transport as a function of the magnetic field and energy detuning between the quantum dots reveal an intricate pattern of the spin state evolution. We demonstrate that the complete set of measurements can be understood by taking into account the interplay between spin-orbit interaction and a single impurity spin coupled to the double dot. The detection and tunability of this coupling are important for quantum manipulation in carbon nanotubes.

Spin-to-charge conversion of mesoscopic spin currents

Recent theoretical investigations have shown that spin currents can be generated by passing electric currents through spin-orbit coupled mesoscopic systems. Measuring these spin currents has, however, not been achieved to date. We show how mesoscopic spin currents in lateral heterostructures can be measured with a single-channel voltage probe. In the presence of a spin current, the charge current I(qpc) through the quantum point contact connecting the probe is odd in an externally applied Zeeman field B, while it is even in the absence of spin current. Furthermore, the zero-field derivative ∂(B)I(qpc) is proportional to the magnitude of the spin current, with a proportionality coefficient that can be determined in an independent measurement. We confirm these findings numerically.

Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas

We have measured the electrically detected magnetic resonance of donor-doped silicon field-effect transistors in resonant X- (9.7 GHz) and W-band (94 GHz) microwave cavities. The two-dimensional electron gas resonance signal increases by 2 orders of magnitude from X to W band, while the donor resonance signals are enhanced by over 1 order of magnitude. Bolometric effects and spin-dependent scattering are inconsistent with the observations. We propose that polarization transfer from the donor to the two-dimensional electron gas is the main mechanism giving rise to the spin resonance signals.

Unconventional transport in the "hole" regime of a si double quantum dot

Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extracted from transport data in the multiple-electron regime, we identify a novel spin-flip cotunneling process that lifts a singlet blockade.

Tunable spin loading and T1 of a silicon spin qubit measured by single-shot readout

We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.

Single-shot detection of electrons generated by individual photons in a tunable lateral quantum dot

We demonstrate single-shot detection of single electrons generated by single photons using an electrically tunable quantum dot and a quantum point contact charge detector. By tuning the quantum dot in a Coulomb blockade before the photoexcitation, we observe the trapping and subsequent resetting of single photogenerated electrons. The photogenerated electrons can be stored in the dot for a tunable time range from shorter to longer than the spin-flip time T1. We combine this trap-reset technique with spin-dependent tunneling under magnetic fields to observe the spin-dependent photon detection within the T1.

Transport through a strongly coupled graphene quantum dot in perpendicular magnetic field

We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separating a 140 nm diameter island from source and drain graphene contacts. Lateral graphene gates are used to electrostatically tune the device. Measurements of Coulomb resonances, including constriction resonances and Coulomb diamonds prove the functionality of the graphene quantum dot with a charging energy of approximately 4.5 meV. We show the evolution of Coulomb resonances as a function of perpendicular magnetic field, which provides indications of the formation of the graphene specific 0th Landau level. Finally, we demonstrate that the complex pattern superimposing the quantum dot energy spectra is due to the formation of additional localized states with increasing magnetic field.

Spin relaxation in semiconductor quantum rings and dots--a comparative study

We calculate spin relaxation times due to spin-orbit-mediated electron-phonon interactions for experimentally accessible semiconductor quantum ring and dot architectures. We elucidate the differences between the two systems due to different confinement. The estimated relaxation times (at B = 1 T) are in the range between a few milliseconds to a few seconds. This high stability of spin in a quantum ring allows us to test it as a spin qubit. A brief discussion of quantum state manipulations with such a qubit is presented.

Electrically detected magnetic resonance in a W-band microwave cavity

We describe a low-temperature sample probe for the electrical detection of magnetic resonance in a resonant W-band (94  GHz) microwave cavity. The advantages of this approach are demonstrated by experiments on silicon field-effect transistors. A comparison with conventional low-frequency measurements at X-band (9.7  GHz) on the same devices reveals an up to 100-fold enhancement of the signal intensity. In addition, resonance lines that are unresolved at X-band are clearly separated in the W-band measurements. Electrically detected magnetic resonance at high magnetic fields and high microwave frequencies is therefore a very sensitive technique for studying electron spins with an enhanced spectral resolution and sensitivity.

Transport spectroscopy of non-equilibrium many-particle spin states in self-assembled quantum dots

Self-assembled quantum dots (QDs) are prominent candidates for solid-state quantum information processing. For these systems, great progress has been made in addressing spin states by optical means. In this study, we introduce an all-electrical measurement technique to prepare and detect non-equilibrium many-particle spin states in an ensemble of self-assembled QDs at liquid helium temperature. The excitation spectra of the one- (QD hydrogen), two- (QD helium) and three- (QD lithium) electron configuration are shown and compared with calculations using the exact diagonalization method. An exchange splitting of 10 meV between the excited triplet and singlet spin states is observed in the QD helium spectrum. These experiments are a starting point for an all-electrical control of electron spin states in self-assembled QDs above liquid helium temperature.

All-electrical quantum state manipulation is highly desirable for quantum information technologies. In this study, the authors demonstrate the preparation and detection of excited many-particle spin states in self-assembled quantum dots at 4 K, using only electrical means.

The effect of electrostatic screening on a nanometer scale electrometer

We investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We are able to tune the rate and magnitude of the screening effect by varying the temperature and the voltages applied to the device, respectively. We show that despite this screening effect, the electrometer is still very sensitive to its electrostatic environment, even at room temperature.

Interlaced dynamical decoupling and coherent operation of a singlet-triplet qubit

We experimentally demonstrate coherence recovery of singlet-triplet superpositions by interlacing qubit rotations between Carr-Purcell (CP) echo sequences. We then compare the performance of Hahn, CP, concatenated dynamical decoupling (CDD), and Uhrig dynamical decoupling for singlet recovery. In the present case, where gate noise and drift combined with spatially varying hyperfine coupling contribute significantly to dephasing, and pulses have limited bandwidth, CP and CDD yield comparable results, with T(2)∼80 μs.

Enhancing the coherence of a spin qubit by operating it as a feedback loop that controls its nuclear spin bath

In many realizations of electron spin qubits the dominant source of decoherence is the fluctuating nuclear spin bath of the host material. The slowness of this bath lends itself to a promising mitigation strategy where the nuclear spin bath is prepared in a narrowed state with suppressed fluctuations. Here, this approach is realized for a two-electron spin qubit in a GaAs double quantum dot and a nearly tenfold increase in the inhomogeneous dephasing time T₂* is demonstrated. Between subsequent measurements, the bath is prepared by using the qubit as a feedback loop that first measures its nuclear environment by coherent precession, and then polarizes it depending on the final state. This procedure results in a stable fixed point at a nonzero polarization gradient between the two dots, which enables fast universal qubit control.

Single-shot readout of an electron spin in silicon

The size of silicon transistors used in microelectronic devices is shrinking to the level at which quantum effects become important. Although this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in silicon can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility of eliminating nuclear spins from the bulk crystal. However, the control of single electrons in silicon has proved challenging, and so far the observation and manipulation of a single spin has been impossible. Here we report the demonstration of single-shot, time-resolved readout of an electron spin in silicon. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor-compatible with current microelectronic technology. We observed a spin lifetime of ∼6 seconds at a magnetic field of 1.5 tesla, and achieved a spin readout fidelity better than 90 per cent. High-fidelity single-shot spin readout in silicon opens the way to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.

Spin states in graphene quantum dots

We investigate ground and excited state transport through small (d≈70  nm) graphene quantum dots. The successive spin filling of orbital states is detected by measuring the difference between ground-state energies as a function of a magnetic field. For a magnetic field in-plane of the quantum dot the Zeeman splitting of spin states is measured. The results are compatible with a g factor of 2, and we detect a spin-filling sequence for a series of states which is reasonable given the strength of exchange interaction effects expected by comparing Coulomb interaction energy and kinetic energy of charge carriers in graphene.

Force-detected nuclear magnetic resonance: recent advances and future challenges

We review recent efforts to detect small numbers of nuclear spins using magnetic resonance force microscopy. Magnetic resonance force microscopy (MRFM) is a scanning probe technique that relies on the mechanical measurement of the weak magnetic force between a microscopic magnet and the magnetic moments in a sample. Spurred by the recent progress in fabricating ultrasensitive force detectors, MRFM has rapidly improved its capability over the last decade. Today it boasts a spin sensitivity that surpasses conventional, inductive nuclear magnetic resonance detectors by about eight orders of magnitude. In this review we touch on the origins of this technique and focus on its recent application to nanoscale nuclear spin ensembles, in particular on the imaging of nanoscale objects with a three-dimensional (3D) spatial resolution better than 10 nm. We consider the experimental advances driving this work and highlight the underlying physical principles and limitations of the method. Finally, we discuss the challenges that must be met in order to advance the technique towards single nuclear spin sensitivity-and perhaps-to 3D microscopy of molecules with atomic resolution.

Charge and spin state readout of a double quantum dot coupled to a resonator

State readout is a key requirement for a quantum computer. For semiconductor-based qubit devices it is usually accomplished using a separate mesoscopic electrometer. Here we demonstrate a simple detection scheme in which a radio frequency resonant circuit coupled to a semiconductor double quantum dot is used to probe its charge and spin states. These results demonstrate a new noninvasive technique for measuring charge and spin states in quantum dot systems without requiring a separate mesoscopic detector.

Long spin-relaxation time in a single metal nanoparticle

Spin-relaxation time is key to the performance of spin-based devices. Although the spin-relaxation times of semiconductor materials are typically approximately 100 ns (ref. 3), they are on the order of picoseconds in bulk metals due to the high density of scattering centres. In metallic nanoparticles, the spin-relaxation times can be strongly enhanced due to the quantum size effect, reaching 150 ns in cobalt nanoparticles. Here, we show that for extra electrons confined in a single ferromagnetic-metal MnAs nanoparticle embedded in a GaAs semiconductor matrix, the spin-relaxation time can reach 10 micros at 2 K, which is seven orders of magnitude longer than those of conventional metallic thin film or bulk systems, and the longest value ever reported for metallic nanoparticles. This long relaxation time is made possible by using epitaxially grown single-crystal devices with abrupt interfaces, and by avoiding surface contamination of the MnAs nanoparticle. Such a long spin-relaxation time can be very useful in nanoscale spintronic devices.

Resonant tunnelling features in quantum dots

We present a systematic review of features due to resonant electron tunnelling, observable in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot (orbital, spin and valley states) as well as extrinsic effects (phonon/photon emission/absorption, features in the charge reservoirs, coupling to nearby charge centres). We focus on the most common operating conditions, neglecting effects due to strong coupling to the leads. By discussing the experimental signatures of each type of feature, we aim at providing practical methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or to predict the performance of the dot for quantum information processing.

Spectroscopy of few-electron single-crystal silicon quantum dots

A defining feature of modern CMOS devices and almost all quantum semiconductor devices is the use of many different materials. For example, although electrical conduction often occurs in single-crystal semiconductors, gates are frequently made of metals and dielectrics are commonly amorphous. Such devices have demonstrated remarkable improvements in performance over recent decades, but the heterogeneous nature of these devices can lead to defects at the interfaces between the different materials, which is a disadvantage for applications in spintronics and quantum information processing. Here we report the fabrication of a few-electron quantum dot in single-crystal silicon that does not contain any heterogeneous interfaces. The quantum dot is defined by atomically abrupt changes in the density of phosphorus dopant atoms, and the resulting confinement produces novel effects associated with energy splitting between the conduction band valleys. These single-crystal devices offer the opportunity to study how very sharp, atomic-scale confinement--which will become increasingly important for both classical and quantum devices--influences the operation and performance of devices.

Phonon-mediated versus coulombic backaction in quantum dot circuits

Quantum point contacts (QPCs) are commonly employed to detect capacitively the charge state of coupled quantum dots (QDs). An indirect backaction of a biased QPC onto a double QD laterally defined in a GaAs/AlGaAs heterostructure is observed. Energy is emitted by nonequilibrium charge carriers in the leads of the biased QPC. Part of this energy is absorbed by the double QD where it causes charge fluctuations that can be observed under certain conditions in its stability diagram. By investigating the spectrum of the absorbed energy, we find that both acoustic phonons and Coulomb interaction can be involved in the backaction, depending on the geometry and coupling constants.

Localized magnetic fields in arbitrary directions using patterned nanomagnets

Control of the local magnetic fields desirable for spintronics and quantum information technology is not well developed. Existing methods produce either moderately small local fields or one field orientation. We present designs of patterned magnetic elements that produce remanent fields of 50 mT (potentially 200 mT) confined to chosen, submicrometer regions in directions perpendicular to an external initializing field. A wide variety of magnetic-field profiles on nanometer scales can be produced with the option of applying electric fields, for example, to move a quantum dot between regions where the magnetic-field direction or strength is different. We have confirmed our modeling by measuring the fields in one design using electron holography.

Universal decay cascade model for dynamic quantum dot initialization

Dynamic quantum dots can be formed by time-dependent electrostatic potentials, such as in gate- or surface-acoustic-wave-driven electron pumps. In this work we propose and quantify a scheme to initialize quantum dots with a controllable number of electrons. It is based on a rapid increase of the electron potential energy and simultaneous decoupling from the source lead. The full probability distribution for the final number of captured electrons is obtained by solving a master equation for stochastic cascade of single electron escape events. We derive an explicit fitting formula to extract the sequence of decay rate ratios from the measurements of averaged current in a periodically driven device. This provides a device-specific fingerprint which allows us to compare different architectures, and predict the upper limits of initialization accuracy from low precision measurements.

Inelastic backaction due to quantum point contact charge fluctuations

We study theoretically transitions of a double quantum-dot qubit caused by nonequilibrium charge fluctuations in a nearby quantum point contact (QPC) used as a detector. We show that these transitions are related to the fundamental Heisenberg backaction associated with the measurement, and use the uncertainty principle to derive a lower bound on the transition rates. We also derive simple expressions for the transition rates for the usual model of a QPC as a mesoscopic conductor, with screening treated at the RPA level. Finally, numerical results are presented which demonstrate that the charge noise and shot noise backaction mechanisms can be distinguished in QPCs having nonadiabatic potentials. The enhanced sensitivity of the charge noise to the QPC potential is explained in terms of interference contributions similar to those which cause Friedel oscillations.