Large, non-saturating magnetoresistance in WTe2

Unconventional scaling of the superfluid density with the critical temperature in transition metal dichalcogenides

We report on muon spin rotation experiments probing the magnetic penetration depth λ(T) in the layered superconductors in 2H-NbSe₂ and 4H-NbSe₂. The current results, along with our earlier findings on 1T'-MoTe₂ (Guguchia et al.), demonstrate that the superfluid density scales linearly with T _c in the three transition metal dichalcogenide superconductors. Upon increasing pressure, we observe a substantial increase of the superfluid density in 2H-NbSe₂, which we find to correlate with T _c. The correlation deviates from the abovementioned linear trend. A similar deviation from the Uemura line was also observed in previous pressure studies of optimally doped cuprates. This correlation between the superfluid density and T _c is considered a hallmark feature of unconventional superconductivity. Here, we show that this correlation is an intrinsic property of the superconductivity in transition metal dichalcogenides, whereas the ratio T _c/T _F is approximately a factor of 20 lower than the ratio observed in hole-doped cuprates. We, furthermore, find that the values of the superconducting gaps are insensitive to the suppression of the charge density wave state.

Vertical ferroelectric switching by in-plane sliding of two-dimensional bilayer WTe2

Based on first-principles calculations, we studied the ferroelectric properties of bilayer 1T'-WTe₂. In this work, we discovered that the polarization stems from uncompensated out-of-plane interlayer charge transfer, which can be switched upon interlayer sliding of an in-plane translation. Our differential charge density results also confirmed that such ferroelectricity in the bilayer WTe₂ is derived from interlayer charge transfer. The ferroelectric polarization directions further control the spin texture of the bilayer WTe₂, which may have important applications in spintronics. Therefore, we propose a spin field effect transistor (spin-FET) design that may effectively improve the spin-polarized injection rate. In addition, the lattice strain has been found to have an important influence on the ferroelectric properties of the bilayer WTe₂. One can effectively increase the polarization with a maximum at 3% tensile strain, whereas a 3% compressive strain can transform the bilayer WTe₂ from the ferroelectric to paraelectric phase.

Structural, vibrational and electrical properties of type-II Dirac semimetal PtSe2 under high pressure

We present a high-pressure study of type-II Dirac semimetal PtSe₂ single crystals through synchrotron x-ray diffraction (XRD), electrical transport and Raman scattering measurements in diamond anvil cells with pressures up to 36.1-42.3 GPa, from which two critical pressure points associated with unusual electron-phonon coupling are unraveled. We show that both resistance and phonon linewidth of Raman modes display anomalies at the first critical pressure of P _r ~ 10 GPa, in accordance with a scenario of pressure-induced disappearance/appearance of type-II/type-I Dirac points around P _r predicted previously. The second critical pressure P _c ~ 20 GPa may correspond to a structural crossover of PtSe₂ from quasi-2D lattice to 3D network, which is revealed via detailed analysis of the structural parameters extracted from XRD refinement, Raman modes shifts as well as parameters from fitting of the low-temperature resistance. Our results demonstrate great tunability of PtSe₂ via strain engineering, thanks to the single p-orbital manifold derived electronic states that are susceptible to out-of-plane and in-plane distances.

Revealing 'plasmaron' feature in DySb by optical spectroscopy study

We report magnetic susceptibility, resistivity and optical spectroscopy study on single crystal sample DySb. It exhibits extremely large magnetoresistance (XMR), and a magnetic phase transition from paramagnetic (PM) to antiferromagnetic (AFM) state at about 10 K. A 'screened' plasma edge at about 4000 cm^-1 is revealed by optical measurement, which suggests that the material has a low carrier density. With decreasing temperature, the 'screened' plasma edge shows a blue shift, possibly due to a decrease of the effective mass of carriers. Notably, an anomalous temperature dependent midinfrared absorption feature is observed in the vicinity of the 'screened' plasma edge. In addition, it can be connected to the inflection point in the real part of the dielectric function [Formula: see text], the frequency of which exactly tracks the temperature dependent 'screened' plasma frequency. This phenomena can be explained by the appearance of a coupled electron-plasmon 'plasmaron' feature.

Hydrogen plasma-treated MoSe2 nanosheets enhance the efficiency and stability of organic photovoltaics

In this paper we report the effect on the power conversion efficiency (PCE) and stability of photovoltaic devices after incorporating hydrogenated two-dimensional (2D) MoSe₂ nanosheets into the active layer of bulk heterojunction (BHJ) organic photovoltaics (OPV). The surface properties of 2D MoSe₂ nanosheets largely affect their dispersion in the active layer blend and, thus, influence the carrier mobility, PCE, and stability of corresponding devices. We treated MoSe₂ nanosheets with hydrogen plasma and investigated their influence on the polymer packing and fullerene domain size of the active layer. For the optimized devices incorporating 37.5 wt% of untreated MoSe₂, we obtained a champion PCE of 9.82%, compared with the champion reference PCE of approximately 9%. After incorporating the hydrogen plasma-treated MoSe₂ nanosheets, we achieved a champion PCE of 10.44%-a relative increase of 16% over that of the reference device prepared without MoSe₂ nanosheets. This PCE is the one of the highest ever reported for OPVs incorporating 2D materials. We attribute this large enhancement to the enhanced exciton generation and dissociation at the MoSe₂-fullerene interface and, consequently, the balanced charge carrier mobility. The device incorporating the MoSe₂ nanosheets maintained 70% of its initial PCE after heat-treatment at 100 °C for 1 h; in contrast, the PCE of the reference device decreased to 60% of its initial value-a relative increase in stability of 17% after incorporating these nanosheets. We also incorporated MoSe₂ nanosheets (both with and without treatment) into a polymer donor (PBDTTBO)/small molecule (IT-4F) acceptor system. The champion PCEs reached 7.85 and 8.13% for the devices incorporating the MoSe₂ nanosheets with and without plasma treatment, respectively-relative increases of 8 and 12%, respectively, over that of the reference. These results should encourage a push toward the implementation of transition metal dichalcogenides to enhance the performances of BHJ OPVs.

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

2D materials, namely thin layers of layered materials, are attracting much attention because of their unique electronic, optical, thermal, and catalytic properties for wide applications. To advance both the fundamental studies and further practical applications, the scalable and controlled synthesis of large-sized 2D materials is desired, while there still lacks ideal approaches. Alternatively, the chemical vapor transport reaction is an old but powerful technique, and is recently adopted for synthesizing 2D materials, producing bulk crystals of layered materials or corresponding 2D films. Herein, recent advancements in synthesizing both bulk layered and 2D materials by chemical vapor transport reactions are summarized. Beginning with a brief introduction of the fundamentals of chemical vapor transport reactions, chemical vapor transport-based syntheses of bulk layered and 2D materials, mainly exampled by transition metal dichalcogenides and black phosphorus, are reviewed. Particular attention is paid to important factors that can influence the reactions and the growth mechanisms of black phosphorus. Finally, perspectives about the chemical vapor transport-based synthesis of 2D materials are discussed, intending to redraw attentions on chemical vapor transport reactions.

Recent Advances in Interface Engineering of Transition-Metal Dichalcogenides with Organic Molecules and Polymers

The interface engineering of two-dimensional (2D) transition-metal dichalcogenides (TMDs) has been regarded as a promising strategy to modulate their outstanding electrical and optoelectronic properties because of their inherent 2D nature and large surface-to-volume ratio. In particular, introducing organic molecules and polymers directly onto the surface of TMDs has been explored to passivate the surface defects or achieve better interfacial properties with neighboring surfaces efficiently, thus leading to great opportunities for the realization of high-performance TMD-based applications. This review provides recent progress in the interface engineering of TMDs with organic molecules and polymers corresponding to the modulation of their electrical and optoelectronic characteristics. Depending on the interfaces between the surface of TMDs and dielectric, conductive contacts or the ambient environment, we present various strategies to introduce an organic interlayer from materials to processing. In addition, the role of native defects on the surface of TMDs, such as adatoms or vacancies, in determining their electrical characteristics is also discussed in detail. Finally, the future challenges and opportunities associated with the interface engineering are highlighted.

Robust topological nodal lines in halide carbides

A topological nodal line semimetal is a novel state of matter in which the gapless bulk state extends along the Brillouin zone forming a closed 1D Fermi surface. Here, we theoretically predict that the layered halide carbide Y2C2I2 is a novel metal containing interconnected nodal lines protected by the parallel mirror planes kz = 0 and kz = 0.5, characterized by independent mirror Chern numbers (MCNs) |μ1| = |μ| = 1. Because of the interlocking 2D nodal lines stacked along the c-axis direction, the topological property is robust both in the 3D bulk as a topological chain metal and in the 2D nanostructure as a topological nodal line. Consequently, Y2C2I2 and other related layered halide carbide materials are unique candidates to realize functional topological devices due their size-independent topological properties.

Sub-Picosecond Carrier Dynamics Induced by Efficient Charge Transfer in MoTe2/WTe2 van der Waals Heterostructures

Demonstration of van der Waals (vdW) semiconductor/metal heterostructures (SMHs) based on transition metal dichalcogenides has been a central approach in high-speed electronics by introducing ultrafast carrier dynamics. In this regard, a Weyl semimetal WTe₂ is of great interest due to its vdW layered nature, low work function, and superior electrical properties. However, little is still known about its heterostructures, and a few picoseconds photocarrier lifetimes hinder its applications in high-speed electronics. Here, we propose a SMH: semimetallic Td phase WTe₂ with its sister compound of semiconducting 2H phase MoTe₂. Time-resolved terahertz (THz) spectroscopy demonstrated that WTe₂ exhibited the significantly shorter carrier lifetimes of sub-picosecond when forming a junction with MoTe₂. We provided explicit characteristic signatures, revealing charge transfer across the interface and the subsequent interlayer exciton decay. This work not only offers the extension of the THz detection scope of ultrafast phenomena from atomically thin materials but also provides a building block of vertical SMHs for high-speed electronic devices with sub-picosecond photocarrier lifetimes.

First principles investigation of topological phase in XMR material TmSb under hydrostatic pressure

In this article, we report emergence of topological phase in extremely large magnetoresistance (XMR) material TmSb under hydrostatic pressure using first principles calculations. We find that TmSb, a topologically trivial semimetal, undergoes a topological phase transition with band inversion at X point without breaking any symmetry under a hydrostatic pressure of 12 GPa. At 15 GPa, it again becomes topologically trivial with band inversion at [Formula: see text] as well as X point. We find that the pressures corresponding to the topological phase transitions are far below the pressure corresponding to structural phase transition at 25.5 GPa. The reentrant behaviour of topological quantum phase with hydrostatic pressure would help in finding a correlation between topology and XMR effects through experiments.

Remarkable electronic and optical anisotropy of layered 1T'-WTe2 2D materials

Anisotropic 2D materials exhibit novel optical, electrical and thermoelectric properties that open possibilities for a great variety of angle-dependent devices. Recently, quantitative research on 1T'-WTe2 has been reported, revealing its fascinating physical properties such as non-saturating magnetoresistance, highly anisotropic crystalline structure and anisotropic optical/electrical response. Especially for its anisotropic properties, surging research interest devoted solely to understanding its structural and optical properties has been undertaken. Here we report quantitative, comprehensive work on the highly anisotropic, optical, electrical and optoelectronic properties of few-layer 1T'-WTe2 by azimuth-dependent reflectance difference microscopy, DC conductance measurements, as well as polarization-resolved and wavelength-dependent optoelectrical measurements. The electrical conductance anisotropic ratio is found to ≈103 for a thin 1T'-WTe2 film, while the optoelectronic anisotropic ratio is around 300 for this material. The polarization dependence of the photo-response is ascribed to the unique anisotropic in-plane crystal structure, consistent with the optical absorption anisotropy results. In general, 1T'-WTe2, with its highly anisotropic electrical and photoresponsivity reported here, demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways for applications of 2D materials for light polarization detection.

Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect Transistors

The transport behaviors of MoS₂ field-effect transistors (FETs) with various channel thicknesses are studied. In a 12 nm thick MoS₂ FET, a typical switching behavior is observed with an I_on/I_off ratio of 10⁶. However, in 70 nm thick MoS₂ FETs, the gating effect weakens with a large off-current, resulting from the screening of the gate field by the carriers formed through the ionization of S vacancies at 300 K. Hence, when the latter is dual-gated, two independent conductions develop with different threshold voltage (V_TH) and field-effect mobility (μ_FE) values. When the temperature is lowered for the latter, both the ionization of S vacancies and the gate-field screening reduce, which revives the strong I_on/I_off ratio and merges the two separate channels into one. Thus, only one each of V_TH and μ_FE are seen from the thick MoS₂ FET when the temperature is less than 80 K. The change of the number of conduction channels is attributed to the ionization of S vacancies, which leads to a temperature-dependent intra- and interlayer conductance and the attenuation of the electrostatic gate field. The defect-related transport behavior of thick MoS₂ enables us to propose a new device structure that can be further developed to a vertical inverter inside a single MoS₂ flake.

Tailored Tunnel Magnetoresistance Response in Three Ultrathin Chromium Trihalides

Materials that demonstrate large magnetoresistance have attracted significant interest for many decades. Extremely large tunnel magnetoresistance (TMR) has been reported by several groups across ultrathin CrI₃ by exploiting the weak antiferromagnetic coupling between adjacent layers. Here, we report a comparative study of TMR in all three chromium trihalides (CrX₃, X = Cl, Br, or I) in the two-dimensional limit. As the materials exhibit different transition temperatures and interlayer magnetic ordering in the ground state, tunneling measurements allow for an easy determination of the field-temperature phase diagram for the three systems. By changing sample thickness and biasing conditions, we then demonstrate how to maximize and further tailor the TMR response at different temperatures for each material. In particular, near the magnetic transition temperature, TMR is nonsaturating up to the highest fields measured for all three compounds owing to the large, field-induced exchange coupling.

Time-resolved XUV ARPES with tunable 24-33 eV laser pulses at 30 meV resolution

High harmonic generation of ultrafast laser pulses can be used to perform angle-resolved photoemission spectroscopy (ARPES) to map the electronic band structure of materials with femtosecond time resolution. However, currently it is difficult to reach high momenta with narrow energy resolution. Here, we combine a gas phase extreme ultraviolet (XUV) femtosecond light source, an XUV monochromator, and a time-of-flight electron analyzer to develop XUV-based time-resolved ARPES. Our technique can produce tunable photon energy between 24-33 eV with an unprecedented energy resolution of 30 meV and time resolution of 200 fs. This technique enables time-, energy- and momentum-resolved investigation of the nonequilibrium dynamics of electrons in materials with a full access to their first Brillouin zone. We evaluate the performance of this setup through exemplary measurements on various quantum materials, including WTe₂, WSe₂, TiSe₂, and Bi₂Sr₂CaCu₂O_8+δ.

Nonlinear Planar Hall Effect

An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi_{2}Se_{3} film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a π/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of π/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.

A room-temperature ferroelectric semimetal

Coexistence of reversible polar distortions and metallicity leading to a ferroelectric metal, first suggested by Anderson and Blount in 1965, has so far remained elusive. Electrically switchable intrinsic electric polarization, together with the direct observation of ferroelectric domains, has not yet been realized in a bulk crystalline metal, although incomplete screening by mobile conduction charges should, in principle, be possible. Here, we provide evidence that native metallicity and ferroelectricity coexist in bulk crystalline van der Waals WTe₂ by means of electrical transport, nanoscale piezoresponse measurements, and first-principles calculations. We show that, despite being a Weyl semimetal, WTe₂ has switchable spontaneous polarization and a natural ferroelectric domain structure at room temperature. This new class of materials has tantalizing potential for functional nanoelectronics applications.

Emergence of a real-space symmetry axis in the magnetoresistance of the one-dimensional conductor Li0.9Mo6O17

We report on an emerging symmetry axis in the magnetoresistance of bulk single crystals of quasi-one-dimensional Li_0.9Mo₆O₁₇ below T _min = 25 K, the temperature at which the electrical resistivity experiences a minimum. Detailed angle-dependent magnetoresistance sweeps reveal that this symmetry axis is induced by the development of a negative magnetoresistance, which is suppressed only for magnetic fields oriented along the poles of the MoO₆ octahedra that form the conducting chains. We show that this unusual negative magnetoresistance is consistent with the melting of dark excitons, composed of previously omitted orbitals within the t _2g manifold that order below T _min. The unveiled symmetry axis in directional magnetic fields not only provides evidence for the crystallization of these dark excitons but also sheds new light on the long-standing mystery of the metal-insulator transition in Li_0.9Mo₆O₁₇.

Discovery of Superconductivity in 2M WS2 with Possible Topological Surface States

Recently the metastable 1T'-type VIB-group transition metal dichalcogenides (TMDs) have attracted extensive attention due to their rich and intriguing physical properties, including superconductivity, valleytronics physics, and topological physics. Here, a new layered WS₂ dubbed "2M" WS₂ , is constructed from 1T' WS₂ monolayers, is synthesized. Its phase is defined as 2M based on the number of layers in each unit cell and the subordinate crystallographic system. Intrinsic superconductivity is observed in 2M WS₂ with a transition temperature T_c of 8.8 K, which is the highest among TMDs not subject to any fine-tuning process. Furthermore, the electronic structure of 2M WS₂ is found by Shubnikov-de Haas oscillations and first-principles calculations to have a strong anisotropy. In addition, topological surface states with a single Dirac cone, protected by topological invariant Z₂ , are predicted through first-principles calculations. These findings reveal that the new 2M WS₂ might be an interesting topological superconductor candidate from the VIB-group transition metal dichalcogenides.

Synthesis of WTe2 Nanowires with Increased Electron Scattering

Tungsten ditelluride (WTe₂) has many interesting properties such as its extremely large nonsaturating magnetoresistance and quantum spin Hall state in the monolayer limit. The anisotropic crystal structure of WTe₂ can allow for isolation of particular crystal directions to study the predicted Weyl states or crystal-symmetry-dependent magnetoresistance when studied at limited dimensions. In particular, the recent demonstration of superconductivity in WTe₂ monolayer suggests that realizing nanowire geometry for WTe₂ may be important to investigate potential Majorana zero modes predicted in one-dimensional topological superconductors. In this work, we demonstrate a large-yield, low-temperature synthesis of WTe₂ nanowires, an approximate one-dimensional system, by converting WO₃ nanowires via tellurization. The nanowires are single crystalline and have a higher resistivity than WTe₂ exfoliated flakes with similar thickness. The increased resistivity is attributed to increased scattering from imperfect surfaces and higher surface-to-volume ratios of the WTe₂ nanowires. We demonstrate that the synthesis method is generalizable to other transition-metal dichalcogenides, laying the foundation for further study of this class of materials in the one-dimensional limit.

Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2

Since the discovery of extremely large nonsaturating magnetoresistance (MR) in WTe₂, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large nonsaturating MR through in situ tuning of the magneto-transport properties in thin WTe₂ film. With an electrostatic doping approach, we observed a nonmonotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe₂ film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature-dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the nonmagnetic materials with electron-hole pockets.

Extremely high conductivity observed in the triple point topological metal MoP

Weyl and Dirac fermions have created much attention in condensed matter physics and materials science. Recently, several additional distinct types of fermions have been predicted. Here, we report ultra-high electrical conductivity in MoP at low temperature, which has recently been established as a triple point fermion material. We show that the electrical resistivity is 6 nΩ cm at 2 K with a large mean free path of 11 microns. de Haas-van Alphen oscillations reveal spin splitting of the Fermi surfaces. In contrast to noble metals with similar conductivity and number of carriers, the magnetoresistance in MoP does not saturate up to 9 T at 2 K. Interestingly, the momentum relaxing time of the electrons is found to be more than 15 times larger than the quantum coherence time. This difference between the scattering scales shows that momentum conserving scattering dominates in MoP at low temperatures.

Crossover from negative to positive magnetoresistance in Sr2CrWO6/Sr2Fe10/9Mo8/9O6 superlattices

Sr₂CrWO₆/Sr₂Fe_10/9Mo_8/9O₆ (SCWO/SFMO) superlattices with 4, 6, 7, 10 periods (abbreviated as S-1, S-2, S-3, and S-4) were prepared on (0 0 1) SrTiO₃ (STO) substrates by pulsed laser deposition. All superlattices show macroscopic ferromagnetic behavior, and the magnetization increases with increasing period. The S-1 superlattice demonstrates semiconductor-like temperature-dependent resistivity in the whole measuring temperature range and negative magnetoresistance of  -5.3% at 2 K with 2 T magnetic field, while the other superlattices illustrate metallic behaviors and increasing positive magnetoresistance of 223.1%, 275.4%, and 766.1% under the same conditions. This work not only provides a feasible way to tune the MR effect in magnetic perovskite oxides, but also may stimulate further work on artificially micro-structured thin films with designable magnetic properties.

Linear magnetoresistance in the low-field limit in density-wave materials

Magnetoresistance has a history of revealing key electronic characteristics of materials. From early measurements on noble metals to definitive characterization of localization effects in semiconductors to recent studies of topological materials, the magnetoresistive response provides an experimental technique to explore the Fermi surface in detail, and to predict and craft physical properties through its sign, functional form, and potential quantum character. Linear magnetoresistance in density-wave systems has eluded clear explanation for over half a century. Here, we present measurements that lead to a general explanation based on unusual current paths tied to the formation of long-range charge or spin order. This mechanism potentially extends to the large magnetoresistance observed in semimetals like Bi, graphite, and WTe₂.

The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects, unusual topological band structures, and inhomogeneities that lead to wandering current paths can induce a cross-over from quadratic to linear MR with increasing magnetic field. Here we explore a series of metallic charge- and spin-density-wave systems that exhibit extremely large positive linear MR. By contrast to other linear MR mechanisms, this effect remains robust down to miniscule magnetic fields of tens of Oersted at low temperature. We frame an explanation of this phenomenon in a semiclassical narrative for a broad category of materials with partially gapped Fermi surfaces due to density waves.

Magnetotransport Properties of Layered Topological Material ZrTe2 Thin Film

ZrTe₂ is a candidate topological material from the layered two-dimensional transition-metal dichalcogenide family, and thus the material may show exotic electrical transport properties and may be promising for quantum device applications. In this work, we report the successful growth of layered ZrTe₂ thin film by pulsed-laser deposition and the experimental results of its magnetotransport properties. In the presence of a perpendicular magnetic field, the 60 nm thick ZrTe₂ film shows a large magnetoresistance of 3000% at 2 K and 9 T. A robust linear magnetoresistance is observed under an in-plane magnetic field, and negative magnetoresistance appears in the film when the magnetic field is parallel to the current direction. Furthermore, the Hall results reveal that the ZrTe₂ thin film has a high electron mobility of about 1.8 × 10⁴ cm² V^-1 s^-1 at 2 K. These findings provide insights into further investigations and potential applications of this layered topological material system.

Effects of Rb Intercalation on NbSe2: Phase Formation, Structure, and Physical Properties

Here, we report the crystal structures and properties of Rb _xNbSe₂, with 0 ≤ x ≤ 0.5. With Rb intercalation, Rb _xNbSe₂ evolves from 2H (Phase I) for 0 ≤ x ≤ 0.025, to 6R (Phase II) for x ∼ 0.2 with space group R3 m (no. 166), and finally to 2H (Phase IV) for 0.375 ≤ x ≤ 0.5 with space group P6₃/ mmc (no. 194). In addition, Phase II is found to transform to a rare 6H structure (Phase III) with space group P6₃/ mmc (no. 194) by annealing at a relatively low temperature. We show the first 6H phase in the intercalated transition-metal dichalcogenides (TMDs) family obtained through a solid-state reaction. Moreover, both 6R and 6H phases are new polymorphs in the NbSe₂ system. For the range 0.2 ≤ x ≤ 0.5 in Rb _xNbSe₂, we show metallic electronic transport behavior and a paramagnetic feature. The lack of superconductivity (SC) down to 2 K is most probably due to the decrease of hole carrier density with increasing Rb content. Through careful analysis of the structural data, we were able to assemble a phase diagram covering the range of 0 ≤ x ≤ 0.5 in Rb _xNbSe₂.

A New Magnetic Topological Quantum Material Candidate by Design

Magnetism, when combined with an unconventional electronic band structure, can give rise to forefront electronic properties such as the quantum anomalous Hall effect, axion electrodynamics, and Majorana fermions. Here we report the characterization of high-quality crystals of EuSn₂P₂, a new quantum material specifically designed to engender unconventional electronic states plus magnetism. EuSn₂P₂ has a layered, Bi₂Te₃-type structure. Ferromagnetic interactions dominate the Curie-Weiss susceptibility, but a transition to antiferromagnetic ordering occurs near 30 K. Neutron diffraction reveals that this is due to two-dimensional ferromagnetic spin alignment within individual Eu layers and antiferromagnetic alignment between layers-this magnetic state surrounds the Sn-P layers at low temperatures. The bulk electrical resistivity is sensitive to the magnetism. Electronic structure calculations reveal that EuSn₂P₂ might be a strong topological insulator, which can be a new magnetic topological quantum material (MTQM) candidate. The calculations show that surface states should be present, and they are indeed observed by angle-resolved photoelectron spectroscopy (ARPES) measurements.

Chaotic transport of electron wave packet in Weyl semimetal slab

We theoretically study the quantum transport of an electron wave packet on the Fermi arcs and in the bulk of a Weyl semimetal slab. The numerical analysis of the dynamical equations obtained from the Heisenberg equation of motion reveals that the electron motion in the Weyl semimetal exhibits interesting unusual effects. In particular, signatures of chaotic behavior in the transport of the electron wave packet are observed that are diagnosed by the relevant out-of-time-order correlation function and are analyzed using Poincaré maps. We attribute the appearance of such chaotic transport of the electron wave packet to the interplay of Zitterbewegung and cyclotron oscillations in the Weyl semimetal slab. The chaotic nature of the electron transport is exhibited both along the Fermi arcs and in the bulk of the slab, depending strongly upon the spin orientation of the electron. In the presence of a magnetic field, both interband and intraband (cyclotron) frequencies contribute to the resulting oscillation frequency of the electron motion.

Unveiling the Interfacial Effects for Enhanced Hydrogen Evolution Reaction on MoS2 /WTe2 Hybrid Structures

Using the MoS₂ -WTe₂ heterostructure as a model system combined with electrochemical microreactors and density function theory calculations, it is shown that heterostructured contacts enhance the hydrogen evolution reaction (HER) activity of monolayer MoS₂ . Two possible mechanisms are suggested to explain this enhancement: efficient charge injection through large-area heterojunctions between MoS₂ and WTe₂ and effective screening of mirror charges due to the semimetallic nature of WTe₂ . The dielectric screening effect is proven minor, probed by measuring the HER activity of monolayer MoS₂ on various support substrates with dielectric constants ranging from 4 to 300. Thus, the enhanced HER is attributed to the increased charge injection into MoS₂ through large-area heterojunctions. Based on this understanding, a MoS₂ /WTe₂ hybrid catalyst is fabricated with an HER overpotential of -140 mV at 10 mA cm^-2 , a Tafel slope of 40 mV dec^-1 , and long stability. These results demonstrate the importance of interfacial design in transition metal dichalcogenide HER catalysts. The microreactor platform presents an unambiguous approach to probe interfacial effects in various electrocatalytic reactions.

Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te)₂ atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed. Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macroscale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field.

Ultrahigh conductivity in Weyl semimetal NbAs nanobelts

In two-dimensional (2D) systems, high mobility is typically achieved in low-carrier-density semiconductors and semimetals. Here, we discover that the nanobelts of Weyl semimetal NbAs maintain a high mobility even in the presence of a high sheet carrier density. We develop a growth scheme to synthesize single crystalline NbAs nanobelts with tunable Fermi levels. Owing to a large surface-to-bulk ratio, we argue that a 2D surface state gives rise to the high sheet carrier density, even though the bulk Fermi level is located near the Weyl nodes. A surface sheet conductance up to 5-100 S per □ is realized, exceeding that of conventional 2D electron gases, quasi-2D metal films, and topological insulator surface states. Corroborated by theory, we attribute the origin of the ultrahigh conductance to the disorder-tolerant Fermi arcs. The evidenced low-dissipation property of Fermi arcs has implications for both fundamental study and potential electronic applications.

Anomalous Photothermoelectric Transport Due to Anisotropic Energy Dispersion in WTe2

Band structures are vital in determining the electronic properties of materials. Recently, the two-dimensional (2D) semimetallic transition metal tellurides (WTe₂ and MoTe₂) have sparked broad research interest because of their elliptical or open Fermi surface, making distinct from the conventional 2D materials. In this study, we demonstrate a centrosymmetric photothermoelectric voltage distribution in WTe₂ nanoflakes, which has not been observed in common 2D materials such as graphene and MoS₂. Our theoretical model shows the anomalous photothermoelectric effect arises from an anisotropic energy dispersion and micrometer-scale hot carrier diffusion length of WTe₂. Further, our results are more consistent with the anisotropic tilt direction of energy dispersion being aligned to the b-axis rather than the a-axis of the WTe₂ crystal, which is consistent with the previous first-principle calculations as well as magneto-transport experiments. Our work shows the photothermoelectric current is strongly confined to the anisotropic direction of the energy dispersion in WTe₂, which opens an avenue for interesting electro-optic applications such as electron beam collimation and electron lenses.

Nonlinear anomalous Hall effect in few-layer WTe2

The Hall effect occurs only in systems with broken time-reversal symmetry, such as materials under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE)¹. Here we show a nonlinear AHE in a non-magnetic material under zero magnetic field, in which the Hall voltage depends quadratically on the longitudinal current^2-6. We observe the effect in few-layer T_d-WTe₂, a two-dimensional semimetal with broken inversion symmetry and only one mirror line in the crystal plane. Our angle-resolved electrical measurements reveal that the Hall voltage maximizes (vanishes) when the bias current is perpendicular (parallel) to the mirror line. The observed effect can be understood as an AHE induced by the bias current, which generates an out-of-plane magnetization. The temperature dependence of the Hall conductivity further suggests that both the intrinsic Berry curvature dipole and extrinsic spin-dependent scatterings contribute to the observed nonlinear AHE.

Thickness Tunable Wedding-Cake-like MoS2 Flakes for High-Performance Optoelectronics

Atomically thin transition-metal dichalcogenides (TMDCs) have received substantial interest due to their typical thickness-dependent optical and electronic properties and related applications in optoelectronics. However, the large-scale, thickness-tunable growth of such materials is still challenging. Herein, we report a fast growth of thickness-tunable wedding-cake-like MoS₂ flakes on 6-in. soda-lime glass by using NaCl-coated Mo foils as metal precursors. The MoS₂ thicknesses are tuned from one layer (1L) to >20L by controlling the concentrations of NaCl promoter. To attest to the ultrahigh crystal quality, related devices based on 1L-multilayer MoS₂ lateral junctions have been constructed and display a relatively high rectification ratio (∼10³) and extra high photoresponsitivity (∼10⁴ A/W). Thanks to the scalable sizes, uniform distributions of the flakes and homogeneous optical properties, the applications in ultraviolet (UV) irradiation filtering eyewear are also demonstrated. Our work should hereby propel the scalable production of layer-controlled TMDC materials as well as their optical and optoelectrical applications.

Nonlinear magnetotransport shaped by Fermi surface topology and convexity

The nature of Fermi surface defines the physical properties of conductors and many physical phenomena can be traced to its shape. Although the recent discovery of a current-dependent nonlinear magnetoresistance in spin-polarized non-magnetic materials has attracted considerable attention in spintronics, correlations between this phenomenon and the underlying fermiology remain unexplored. Here, we report the observation of nonlinear magnetoresistance at room temperature in a semimetal WTe₂, with an interesting temperature-driven inversion. Theoretical calculations reproduce the nonlinear transport measurements and allow us to attribute the inversion to temperature-induced changes in Fermi surface convexity. We also report a large anisotropy of nonlinear magnetoresistance in WTe₂, due to its low symmetry of Fermi surfaces. The good agreement between experiments and theoretical modeling reveals the critical role of Fermi surface topology and convexity on the nonlinear magneto-response. These results lay a new path to explore ramifications of distinct fermiology for nonlinear transport in condensed-matter.

Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs

We have achieved heteroepitaxial stacking of a van der Waals ( vdW) monolayer metal, 1T'-WTe₂, and a semiconductor, 2H-WSe₂, in which a distinctively low contact barrier was established across a clean epitaxial vdW gap. Our epitaxial 1T'-WTe₂ films were identified as a semimetal by low temperature transport and showed the robust breakdown current density of 5.0 × 10⁷ A/cm². In comparison with a series of planar metal contacts, our epitaxial vdW contact was identified to possess intrinsic Schottky barrier heights below 100 meV for both electron and hole injections, contributing to superior ambipolar field-effect transistor (FET) characteristics, i.e., higher FET mobilities and higher on-off current ratios at smaller threshold gate voltages. We discuss our observations around the critical roles of the epitaxial vdW heterointerfaces, such as incommensurate stacking sequences and absence of extrinsic interfacial defects that are inaccessible by other contact methods.

Interface Engineering of Au(111) for the Growth of 1T'-MoSe2

Phase-controlled synthesis of two-dimensional transition-metal dichalcogenides (TMDCs) is of great interest due to the distinct properties of the different phases. However, it is challenging to prepare metallic phase of group-VI TMDCs due to their metastability. At the monolayer level, interface engineering can be used to stabilize the metastable phase. Here, we demonstrate the selective growth of either single-layer 1H- or 1T'-MoSe₂ on Au(111) by molecular-beam epitaxy; the two phases can be unambiguously distinguished using scanning tunnelling microscopy and spectroscopy. While the growth of 1H-MoSe₂ is favorable on pristine Au(111), the growth of 1T'-MoSe₂ is promoted by the predeposition of Se on Au(111). The selective growth of the 1T'-MoSe₂ on Se-pretreated Au(111) is attributed to the Mo intercalation induced stabilization of the 1T' phase, which is supported by density functional theory calculations. In addition, 1T' twin boundaries and 1H-1T' heterojunctions were observed and found to exhibit enhanced tunnelling conductivity. The substrate pretreatment approach for phase-controlled epitaxy could be applicable to other group-VI TMDCs grown on Au (111).

Electrically Robust Single-Crystalline WTe2 Nanobelts for Nanoscale Electrical Interconnects

As the elements of integrated circuits are downsized to the nanoscale, the current Cu-based interconnects are facing limitations due to increased resistivity and decreased current-carrying capacity because of scaling. Here, the bottom-up synthesis of single-crystalline WTe2 nanobelts and low- and high-field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top-down approach, the bottom-up growth mode of WTe2 nanobelts allows systemic characterization of the electrical properties of WTe2 single crystals as a function of channel dimensions. Using a 1D heat transport model and a power law, it is determined that the breakdown of WTe2 devices under vacuum and with AlO x capping layer follows an ideal pattern for Joule heating, far from edge scattering. High-field electrical measurements and self-heating modeling demonstrate that the WTe2 nanobelts have a breakdown current density approaching ≈100 MA cm-2, remarkably higher than those of conventional metals and other transition-metal chalcogenides, and sustain the highest electrical power per channel length (≈16.4 W cm-1) among the interconnect candidates. The results suggest superior robustness of WTe2 against high-bias sweep and its possible applicability in future nanoelectronics.

Anomalous and Polarization-Sensitive Photoresponse of Td -WTe2 from Visible to Infrared Light

Recently, an emergent layered material T_d -WTe₂ was explored for its novel electron-hole overlapping band structure and anisotropic inplane crystal structure. Here, the photoresponse of mechanically exfoliated WTe₂ flakes is investigated. A large anomalous current decrease for visible (514.5 nm), and mid- and far-infrared (3.8 and 10.6 µm) laser irradiation is observed, which can be attributed to light-induced surface bandgap opening from the first-principles calculations. The photocurrent and responsivity can be as large as 40 µA and 250 A W^-1 for a 3.8 µm laser at 77 K. Furthermore, the WTe₂ anomalous photocurrent matches its in-plane crystal structure and exhibits light polarization dependence, maximal for linear laser polarization along the W atom chain a direction and minimal for the perpendicular b direction, with the anisotropic ratio of 4.9. Consistently, first-principles calculations confirm the angle-dependent bandgap opening of WTe₂ under polarized light irradiation. The anomalous and polarization-sensitive photoresponses suggest that linearly polarized light can significantly tune the WTe₂ surface electronic structure, providing a potential approach to detect polarized and broadband lights up to far infrared range.

In-Plane Anisotropic Thermal Conductivity of Few-Layered Transition Metal Dichalcogenide Td-WTe2

2D Td-WTe₂ has attracted increasing attention due to its promising applications in spintronic, field-effect chiral, and high-efficiency thermoelectric devices. It is known that thermal conductivity plays a crucial role in condensed matter devices, especially in 2D systems where phonons, electrons, and magnons are highly confined and coupled. This work reports the first experimental evidence of in-plane anisotropic thermal conductivities in suspended Td-WTe₂ samples of different thicknesses, and is also the first demonstration of such anisotropy in 2D transition metal dichalcogenides. The results reveal an obvious anisotropy in the thermal conductivities between the zigzag and armchair axes. The theoretical calculation implies that the in-plane anisotropy is attributed to the different mean free paths along the two orientations. As thickness decreases, the phonon-boundary scattering increases faster along the armchair direction, resulting in stronger anisotropy. The findings here are crucial for developing efficient thermal management schemes when engineering thermal-related applications of a 2D system.

Quantum Oscillations of the Positive Longitudinal Magnetoconductivity: A Fingerprint for Identifying Weyl Semimetals

Weyl semimetals (WSMs) host charged Weyl fermions as emergent quasiparticles. We develop a unified analytical theory for the anomalous positive longitudinal magnetoconductivity (LMC) in a WSM, which bridges the gap between the classical and ultraquantum approaches. More interestingly, the LMC is found to exhibit periodic-in-1/B quantum oscillations, originating from the oscillations of the nonequilibrium chiral chemical potential. The quantum oscillations, superposed on the positive LMC, are a remarkable fingerprint of a WSM phase with a chiral anomaly, whose observation is a valid criteria for identifying a WSM material. In fact, such quantum oscillations were already observed by several experiments.

Soft hydrogen plasma induced phase transition in monolayer and few-layer MoTe2

Phase transition from the semiconducting hexagonal (2H) phase to the metallic monoclinic (1T') phase in two-dimensional (2D) transition metal dichalcogenides like MoTe₂ is not only of great importance in fundamental study but also of technological significance for broad device applications. Here we report a universal, facile, scalable and reversible phase engineering technique (between 2H and 1T' phases) for both monolayer and few-layer MoTe₂ based on a soft hydrogen plasma treatment. The 2H → 1T' transition was confirmed by a series of characterizations including Raman spectra and mapping studies, XPS analysis and FET device measurements at varying temperatures. We attribute the phase transition to the warping of Te-Mo bonds and the lateral sliding of the top Te-layer induced by the soft hydrogen ion bombardment according to both the structural and electronic characterizations as well as the horizontal comparison with the cases of Ar or O₂ plasma treatment. We have also prepared a 2D heterostructure containing periodical 2H and 1T' MoTe₂ and showed that such phase transition can be readily reversed by post annealing. These results thus provide a robust and efficient approach for the phase engineering of monolayer and few-layer MoTe₂ and could aid the development of 2D optoelectronic, memory and reconfigurable devices.

Negative longitudinal magnetoresistance in gallium arsenide quantum wells

Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observe pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show various types of magnetic field behaviour resembling those reported in topological materials. We attribute them to microscopic disorder and use a phenomenological three-resistor model to account for their various features. Our results showcase a contribution of microscopic disorder in the occurrence of unusual phenomena. They may stimulate further work on tuning electronic properties via disorder/defect nano-engineering.

The attribution of negative longitudinal magnetoresistance (NLMR) in Weyl metals to a chiral anomaly is already challenged. Here, NLMR resembling that of Weyl metals is demonstrated in a non-Weyl-metal GaAs quantum well originating from different types of disorder.

Microfocus Laser-Angle-Resolved Photoemission on Encapsulated Mono-, Bi-, and Few-Layer 1T'-WTe2

Two-dimensional crystals of semi-metallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few-layer 1T'-WTe₂ and of a quantum spin Hall state in monolayers of the same material. Understanding these phases is particularly challenging because little is known from experiments about the momentum space electronic structure of ultrathin crystals. Here, we report direct electronic structure measurements of exfoliated mono-, bi-, and few-layer 1T'-WTe₂ by laser-based microfocus angle-resolved photoemission. This is achieved by encapsulating with monolayer graphene a flake of WTe₂ comprising regions of different thickness. Our data support the recent identification of a quantum spin Hall state in monolayer 1T'-WTe₂ and reveal strong signatures of the broken inversion symmetry in the bilayer. We finally discuss the sensitivity of encapsulated samples to contaminants following exposure to ambient atmosphere.

High Hole Mobility and Nonsaturating Giant Magnetoresistance in the New 2D Metal NaCu4Se4 Synthesized by a Unique Pathway

The new compound NaCu₄Se₄ forms by the reaction of CuO and Cu in a molten sodium polyselenide flux, with the existence of CuO being unexpectedly critical to its synthesis. It adopts a layered hexagonal structure (space group P6₃/ mmc with cell parameters a = 3.9931(6) Å and c = 25.167(5) Å), consisting of infinite two-dimensional [Cu₄Se₄]^- slabs separated by Na⁺ cations. X-ray photoelectron spectroscopy suggests that NaCu₄Se₄ is mixed-valent with the formula (Na⁺)(Cu⁺)₄(Se^2-)(Se^-)(Se₂)^2-. NaCu₄Se₄ is a p-type metal with a carrier density of ∼10²¹ cm^-3 and a high hole mobility of ∼808 cm² V^-1 s^-1 at 2 K based on electronic transport measurements. First-principles calculations suggest the density of states around the Fermi level are composed of Cu-d and Se-p orbitals. At 2 K, a very large transverse magnetoresistance of ∼1400% was observed, with a nonsaturating, linear dependence on field up to 9 T. Our results indicate that the use of metal oxide chemical precursors can open reaction paths to new low-dimensional compounds.

An ultrafast symmetry switch in a Weyl semimetal

Topological quantum materials exhibit fascinating properties^1-3, with important applications for dissipationless electronics and fault-tolerant quantum computers^4,5. Manipulating the topological invariants in these materials would allow the development of topological switching applications analogous to switching of transistors⁶. Lattice strain provides the most natural means of tuning these topological invariants because it directly modifies the electron-ion interactions and potentially alters the underlying crystalline symmetry on which the topological properties depend^7-9. However, conventional means of applying strain through heteroepitaxial lattice mismatch¹⁰ and dislocations¹¹ are not extendable to controllable time-varying protocols, which are required in transistors. Integration into a functional device requires the ability to go beyond the robust, topologically protected properties of materials and to manipulate the topology at high speeds. Here we use crystallographic measurements by relativistic electron diffraction to demonstrate that terahertz light pulses can be used to induce terahertz-frequency interlayer shear strain with large strain amplitude in the Weyl semimetal WTe₂, leading to a topologically distinct metastable phase. Separate nonlinear optical measurements indicate that this transition is associated with a symmetry change to a centrosymmetric, topologically trivial phase. We further show that such shear strain provides an ultrafast, energy-efficient way of inducing robust, well separated Weyl points or of annihilating all Weyl points of opposite chirality. This work demonstrates possibilities for ultrafast manipulation of the topological properties of solids and for the development of a topological switch operating at terahertz frequencies.

Low temperature epitaxy of tungsten–telluride heterostructure films

Single-crystal like WTe₂ films are grown by exploiting van der Waals epitaxy at low temperatures, using pulsed laser deposition.

Band Signatures for Strong Nonlinear Hall Effect in Bilayer WTe_{2}

Unconventional responses upon breaking discrete or crystal symmetries open avenues for exploring emergent physical systems and materials. By breaking inversion symmetry, a nonlinear Hall signal can be observed, even in the presence of time-reversal symmetry, quite different from the conventional Hall effects. Low-symmetry two-dimensional materials are promising candidates for the nonlinear Hall effect, but it is less known when a strong nonlinear Hall signal can be measured, in particular, its connections with the band-structure properties. By using model analysis, we find prominent nonlinear Hall signals near tilted band anticrossings and band inversions. These band signatures can be used to explain the strong nonlinear Hall effect in the recent experiments on two-dimensional WTe_{2}. This Letter will be instructive not only for analyzing the transport signatures of the nonlinear Hall effect but also for exploring unconventional responses in emergent materials.