Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams

Strongly correlated materials

Strongly correlated materials are profoundly affected by the repulsive electron-electron interaction. This stands in contrast to many commonly used materials such as silicon and aluminum, whose properties are comparatively unaffected by the Coulomb repulsion. Correlated materials often have remarkable properties and transitions between distinct, competing phases with dramatically different electronic and magnetic orders. These rich phenomena are fascinating from the basic science perspective and offer possibilities for technological applications. This article looks at these materials through the lens of research performed at Rice University. Topics examined include: Quantum phase transitions and quantum criticality in "heavy fermion" materials and the iron pnictide high temperature superconductors; computational ab initio methods to examine strongly correlated materials and their interface with analytical theory techniques; layered dichalcogenides as example correlated materials with rich phases (charge density waves, superconductivity, hard ferromagnetism) that may be tuned by composition, pressure, and magnetic field; and nanostructure methods applied to the correlated oxides VO₂ and Fe₃O₄, where metal-insulator transitions can be manipulated by doping at the nanoscale or driving the system out of equilibrium. We conclude with a discussion of the exciting prospects for this class of materials.

Strain-gradient effect on energy bands in bent ZnO microwires

The table of contents image illustrates the strain-gradient effect on the optical-electronic properties in a bent ZnO microwire, with a much stronger red-shift on the outer tensile side than a blue-shift on the inner compressive side. The low temperature cathodoluminescence cross-sectional scanning spectra on the strain-neutral middle-plane are highlighted by thicker black lines, which clearly shows a strain-gradient induced red-shift.

Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial

Electron-electron interactions can render an otherwise conducting material insulating, with the insulator-metal phase transition in correlated-electron materials being the canonical macroscopic manifestation of the competition between charge-carrier itinerancy and localization. The transition can arise from underlying microscopic interactions among the charge, lattice, orbital and spin degrees of freedom, the complexity of which leads to multiple phase-transition pathways. For example, in many transition metal oxides, the insulator-metal transition has been achieved with external stimuli, including temperature, light, electric field, mechanical strain or magnetic field. Vanadium dioxide is particularly intriguing because both the lattice and on-site Coulomb repulsion contribute to the insulator-to-metal transition at 340 K (ref. 8). Thus, although the precise microscopic origin of the phase transition remains elusive, vanadium dioxide serves as a testbed for correlated-electron phase-transition dynamics. Here we report the observation of an insulator-metal transition in vanadium dioxide induced by a terahertz electric field. This is achieved using metamaterial-enhanced picosecond, high-field terahertz pulses to reduce the Coulomb-induced potential barrier for carrier transport. A nonlinear metamaterial response is observed through the phase transition, demonstrating that high-field terahertz pulses provide alternative pathways to induce collective electronic and structural rearrangements. The metamaterial resonators play a dual role, providing sub-wavelength field enhancement that locally drives the nonlinear response, and global sensitivity to the local changes, thereby enabling macroscopic observation of the dynamics. This methodology provides a powerful platform to investigate low-energy dynamics in condensed matter and, further, demonstrates that integration of metamaterials with complex matter is a viable pathway to realize functional nonlinear electromagnetic composites.

Unraveling metal-insulator transition mechanism of VO₂ triggered by tungsten doping

Understanding the mechanism of W-doping induced reduction of critical temperature (T_C) for VO₂ metal-insulator transition (MIT) is crucial for both fundamental study and technological application. Here, using synchrotron radiation X-ray absorption spectroscopy combined with first-principles calculations, we unveil the atomic structure evolutions of W dopant and its role in tailoring the T_C of VO₂ MIT. We find that the local structure around W atom is intrinsically symmetric with a tetragonal-like structure, exhibiting a concentration-dependent evolution involving the initial distortion, further repulsion, and final stabilization due to the strong interaction between doped W atoms and VO₂ lattices across the MIT. These results directly give the experimental evidence that the symmetric W core drives the detwisting of the nearby asymmetric monoclinic VO₂ lattice to form rutile-like VO₂ nuclei, and the propagations of these W-encampassed nuclei through the matrix lower the thermal energy barrier for phase transition.

Photothermal optical modulation of ultra-compact hybrid Si-VO₂ ring resonators

We demonstrate photothermally induced optical switching of ultra-compact hybrid Si-VO₂ ring resonators. The devices consist of a sub-micron length ~70 nm thick patch of phase-changing VO₂ integrated onto silicon ring resonators as small as 1.5 μm in radius. The semiconductor-to-metal transition (SMT) of VO₂ is triggered using a 532 nm pump laser, while optical transmission is probed using a tunable cw laser near 1550 nm. We observe optical modulation greater than 10dB from modest quality-factor (~10³) resonances, as well as a large -1.26 nm change in resonant wavelength Δλ, resulting from the large change in the dielectric function of VO₂ in the insulator-to-metal transition achieved by optical pumping.

Stress-induced domain dynamics and phase transitions in epitaxially grown VO₂ nanowires

We demonstrate that surface stresses in epitaxially grown VO₂ nanowires (NWs) have a strong effect on the appearance and stability of intermediate insulating M₂ phases, as well as the spatial distribution of insulating and metallic domains during structural phase transitions. During the transition from an insulating M1 phase to a metallic R phase, the coexistence of insulating M₁ and M₂ phases with the absence of a metallic R phase was observed at atmospheric pressure. In addition, we show that, for a VO₂ NW without the presence of an epitaxial interface, surface stresses dominantly lead to spatially inhomogeneous phase transitions between insulating and metallic phases. In contrast, for a VO₂ NW with the presence of an epitaxial interface, the strong epitaxial interface interaction leads to additional stresses resulting in uniformly alternating insulating and metallic domains along the NW length.

Formation of highly ordered VO2 nanotubular/nanoporous layers and their supercooling effect in phase transitions

The fabrication of self-organized VO(2) nanotubular/nanoporous layers is demonstrated by self-organizing anodization, followed by a suitable heat treatment. These VO(2) layers show a reversible metal to insulator transition (MIT) at 70 and 44 °C, when heating and cooling, respectively.

Heat transfer across the interface between nanoscale solids and gas

When solid materials and devices scale down in size, heat transfer from the active region to the gas environment becomes increasingly significant. We show that the heat transfer coefficient across the solid-gas interface behaves very differently when the size of the solid is reduced to the nanoscale, such as that of a single nanowire. Unlike for macroscopic solids, the coefficient is strongly pressure dependent above ∼10 Torr, and at lower pressures it is much higher than predictions of the kinetic gas theory. The heat transfer coefficient was measured between a single, free-standing VO(2) nanowire and surrounding air using laser thermography, where the temperature distribution along the VO(2) nanowire was determined by imaging its domain structure of metal-insulator phase transition. The one-dimensional domain structure along the nanowire results from the balance between heat generation by the focused laser and heat dissipation to the substrate as well as to the surrounding gas, and thus serves as a nanoscale power-meter and thermometer. We quantified the heat loss rate across the nanowire-air interface, and found that it dominates over all other heat dissipation channels for small-diameter nanowires near ambient pressure. As the heat transfer across the solid-gas interface is nearly independent of the chemical identity of the solid, the results reveal a general scaling relationship for gaseous heat dissipation from nanostructures of all solid materials, which is applicable to nanoscale electronic and thermal devices exposed to gaseous environments.

Single-nanowire raman microprobe studies of doping-, temperature-, and voltage-induced metal-insulator transitions of W(x)V(1-x)O2 nanowires

Considerable recent research interest has focused on mapping the structural phase diagrams of anisotropic VO(2) nanobeams as model systems for elucidating single-domain behavior within strongly correlated electronic materials, to examine in particular the coupling of lattice and orbital degrees of freedom. Nevertheless, the role of substitutional doping in altering the phase stabilities of competing ground states of VO(2) remains underexplored. In this study, we use individual nanowire Raman microprobe mapping to examine the structural phase progressions underlying the metal-insulator transitions of solution-grown W(x)V(1-x)O(2) nanowires. The structural phase progressions have been monitored for three distinctive modes of inducing the electronic metal-insulator phase transition: as a function of (a) W doping at constant temperature, (b) varying temperature for specific W dopant concentrations, and (c) varying applied voltage for specific W dopant concentrations. Our results suggest the establishment of a coexistence regime within individual nanowires wherein M1 and R phases simultaneously exist before the percolation threshold is reached and the nanowire becomes entirely metallic. Such a coexistence regime has been found to exist during both temperature- and voltage-induced transitions. No evidence of an M2 phase is observed upon inducing the electronic phase transition by any of the three distinctive methods (temperature, doping, and applied voltage), suggesting that substitutional tungsten doping stabilizes the M1 phase over its M2 counterpart and further corroborating that the latter phase is not required to mediate M1→R transformations.

Asymmetric orbital-lattice interactions in ultrathin correlated oxide films

Using resonant x-ray spectroscopies combined with density functional calculations, we find an asymmetric biaxial strain-induced d-orbital response in ultrathin films of the correlated metal LaNiO3 which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral "breathing" distortion, which, in turn, produces an emergent charge-ordered ground state with an altered ligand-hole density and bond covalency. Control of this new mechanism opens a pathway to rational orbital engineering, providing a platform for artificially designed Mott materials.

Nanostructure studies of strongly correlated materials

Strongly correlated materials exhibit an amazing variety of phenomena, including metal-insulator transitions, colossal magnetoresistance, and high temperature superconductivity, as strong electron-electron and electron-phonon couplings lead to competing correlated ground states. Recently, researchers have begun to apply nanostructure-based techniques to this class of materials, examining electronic transport properties on previously inaccessible length scales, and applying perturbations to drive systems out of equilibrium. We review progress in this area, particularly emphasizing work in transition metal oxides (Fe(3)O(4), VO(2)), manganites, and high temperature cuprate superconductors. We conclude that such nanostructure-based studies have strong potential to reveal new information about the rich physics at work in these materials.

Giant phase transition properties at terahertz range in VO₂ films deposited by sol-gel method

VO(2) films were fabricated on high-purity single-crystalline silicon substrate by the sol-gel method, followed by rapid annealing. The composition and microstructure of the films were investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM). The results indicated a polycrystalline nature with high crystallinity and compact nanostructure for the films, and the concentration of +4 valence vanadium is 79.85%. Correlated with these, a giant transmission modulation ratio about 81% of the film was observed by terahertz time domain spectroscopy. The experimentally observed transmission characteristics were reproduced approximately, by a simulation at different conductivities across the phase transition. According to the effective-medium theory, we assumed that it is important to increase the concentration of +4 valence vanadium oxide phases and improve the compactness of the VO(2) films for giant phase transition properties. The sol-gel-derived VO(2) films with giant phase transition properties at terahertz range, and the study on their composition and microstructure, provide considerable insight into the fabrication of VO(2) films for the application in THz modulation devices.

Mechanics and dynamics of the strain-induced M1-M2 structural phase transition in individual VO₂ nanowires

The elastic properties and structural phase transitions of individual VO(2) nanowires were studied using an in situ push-to-pull microelectromechanical device to realize quantitative tensile analysis in a transmission electron microscope and a synchrotron X-ray microdiffraction beamline. A plateau was detected in the stress-strain curve, signifying superelasticity of the nanowire arising from the M1-M2 structural phase transition. The transition was induced and controlled by uniaxial tension. The transition dynamics were characterized by a one-dimensionally aligned domain structure with pinning and depinning of the domain walls along the nanowire. From the stress-strain dependence the Young's moduli of the VO(2) M1 and M2 phases were estimated to be 128 ± 10 and 156 ± 10 GPa, respectively. Single pinning and depinning events of M1-M2 domain wall were observed in the superelastic regime, allowing for evaluation of the domain wall pinning potential energy. This study demonstrates a new way to investigate nanoscale mechanics and dynamics of structural phase transitions in general.

Electromechanical actuation and current-induced metastable states in suspended single-crystalline VO₂ nanoplatelets

Current-induced electromechanical actuation enabled by the metal-insulator transition in VO(2) nanoplatelets is demonstrated. The Joule heating by a sufficient current flowing through suspended nanoplatelets results in formation of heterophase domain patterns and is accompanied by nanoplatelet deformation. The actuation action can be achieved in a wide temperature range below the bulk phase transition temperature (68 °C). The observed current-sustained heterophase domain structures should be interpreted as distinct metastable states in free-standing and end-clamped VO(2) samples. We analyze the main prerequisites for the realization of a current-controlled actuator based on the proposed concept.

Structural consequences of ferroelectric nanolithography

Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O(3) thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

Stoichiometry engineering of monoclinic to rutile phase transition in suspended single crystalline vanadium dioxide nanobeams

Coexisting monoclinic M(1) (insulating) and rutile (metallic) domains were observed in free-standing vanadium dioxide nanobeams at room temperature. Similar domain structures have been attributed to interfacial strain, which was not present here. Annealing under reducing conditions indicated that a deficiency of oxygen stabilizes the rutile phase to temperatures as low as 103 K, which represents an unprecedented suppression of the phase transition by 238 K. In a complementary manner, oxygen-rich growth conditions stabilize the metastable monoclinic M(2) and triclinic T (or M(3)) phases. A pseudophase diagram with dimensions of temperature and stoichiometry is established that highlights the accessibility of new phases in the nanobeam geometry.

Nanoporous thermochromic VO(2) films with low optical constants, enhanced luminous transmittance and thermochromic properties

Nanoporous thermochromic VO(2) films with low optical constants and tunable thicknesses have been prepared by polymer-assisted deposition. The film porosity and thickness change the interference relationship of light reflected from the film-substrate and the air-film interfaces, strongly influencing the optical properties of these VO(2) films. Our optimized single-layered VO(2) films exhibit high integrated luminous transmittance (T(lum,l) = 43.3%, T(lum,h) = 39.9%) and solar modulation (ΔT(sol) = 14.1%, from T(sol,l) = 42.9% to T(sol,h) = 28.8%), which are comparable to those of five-layered TiO(2)/VO(2)/TiO(2)/VO(2)/TiO(2) films (T(lum,l) = 45%, T(lum,h) = 42% and ΔT(sol) = 12%, from T(sol,l) = 52% to T(sol,h) = 40%, from Phys. Status Solidi A2009, 206, 2155-2160.). Optical calculations suggest that the performance could be further improved by increasing the porosity.

Understanding the nature of the kinetic process in a VO2 metal-insulator transition

Understanding the kinetics during the metal-insulator transition process is crucial to sort out the underlying physical nature of electron-lattice interactions in correlated materials. Here, based on the temperature-dependent in situ x-ray absorption fine structure measurement and density-functional theory calculations, we have revealed that the monoclinic-to-tetragonal phase transition of VO2 near the critical temperature is characterized by a sharp decrease of the twisting angle δ of the nearest V-V coordination. The VO2 metallization occurs in the intermediate monoclinic like structure with a large twist of V-V pairs when the δ angle is smaller than 1.4°. The correlation between structural kinetics and electronic structure points out that the structural rearrangement is a key factor to narrow the insulating band gap.

Sol-gel-derived epitaxial nanocomposite thin films with large sharp magnetoelectric effect

Nanostructures of multiferroic materials have drawn increasing interest due to the enhanced magnetoelectric coupling and potential for next-generation multifunctional devices. Most of these structures are typically prepared by thin film evaporation approaches. Herein, however, we report a novel sol-gel-based process to synthesize epitaxial BaTiO(3)-CoFe(2)O(4) nanocomposite thin films via phase separation and enhanced heterogeneous nucleation. The magnetoelectric coupling effect is investigated by examining the temperature-dependent magnetization of the composite film, which manifests as a sharp and significant drop (>50%) of the magnetization at the vicinity of a BaTiO(3) ferroelectric phase transition. We propose that the phase transition in BaTiO(3) is mediated by the tensile strain due to intimate coupling to CoFe(2)O(4) phase, which has rarely been reported before. The significant coupling effect is attributed to the small substrate clamping, and the large areal distribution of intimate heteroepitaxial interfaces between the three-dimensionally distributed ferroelectric and magnetic nanostructured phases.

Symmetry relationship and strain-induced transitions between insulating M1 and M2 and metallic R phases of vanadium dioxide

The ability to synthesize VO2 in the form of single-crystalline nanobeams and nano- and microcrystals uncovered a number of previously unknown aspects of the metal-insulator transition (MIT) in this oxide. In particular, several reports demonstrated that the MIT can proceed through competition between two monoclinic (insulating) phases M1 and M2 and the tetragonal (metallic) R phase under influence of strain. The nature of such phase behavior has been not identified. Here we show that the competition between M1 and M2 phases is purely lattice-symmetry-driven. Within the framework of the Ginzburg-Landau formalism, both M phases correspond to different directions of the same four-component structural order parameter, and as a consequence, the M2 phase can appear under a small perturbation of the M1 structure such as doping or stress. We analyze the strain-controlled phase diagram of VO2 in the vicinity of the R-M2-M1 triple point using the Ginzburg-Landau formalism and identify and experimentally verify the pathways for strain-control of the transition. These insights open the door toward more systematic approaches to synthesis of VO2 nanostructures in desired phase states and to use of external fields in the control of the VO2 phase states. Additionally, we report observation of the triclinic T phase at the heterophase domain boundaries in strained quasi-two-dimensional VO2 nanoplatelets, and theoretically predict phases that have not been previously observed.

Extended mapping and exploration of the vanadium dioxide stress-temperature phase diagram

Single-crystal micro- and nanomaterials often exhibit higher yield strength than their bulk counterparts. This enhancement is widely recognized in structural materials but is rarely exploited to probe fundamental physics of electronic materials. Vanadium dioxide exhibits coupled electronic and structural phase transitions that involve different structures existing at different strain states. Full understanding of the driving mechanism of these coupled transitions necessitates concurrent structural and electrical measurements over a wide phase space. Taking advantages of the superior mechanical property of micro/nanocrystals of VO(2), we map and explore its stress-temperature phase diagram over a phase space that is more than an order of magnitude broader than previously attained. New structural and electronic aspects were observed crossing phase boundaries at high-strain states. Our work shows that the actively tuning strain in micro/nanoscale electronic materials provides an effective route to investigate their fundamental properties beyond what can be accessed in their bulk counterpart.

Interplay between ferroelastic and metal-insulator phase transitions in strained quasi-two-dimensional VO2 nanoplatelets

Formation of ferroelastic twin domains in vanadium dioxide (VO(2)) nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline VO(2) quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the 2D geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate the possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and nontrivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that a complete picture of the phase transitions in single-crystalline and disordered VO(2) structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.