351
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Elool Dov N, Shankar S, Cohen D, Bendikov T, Rechav K, Shimon LJW, Lahav M, van der Boom ME. Electrochromic Metallo-Organic Nanoscale Films: Fabrication, Color Range, and Devices. J Am Chem Soc 2017; 139:11471-11481. [PMID: 28702992 DOI: 10.1021/jacs.7b04217] [Citation(s) in RCA: 100] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
In this study, we demonstrate a versatile approach for the formation of electrochromic nanoscale assemblies on transparent conductive oxides on both rigid and flexible substrates. Our method is based on the application of alternating spin-coated layers of well-defined metal polypyridyl complexes and a palladium(II) salt to form electrochemically addressable films with a high chromophore density. By varying the central metal ion of the polypyridyl complexes (Os, Ru, and Fe) and their ligands and by mixing these complexes, coatings with a wide range of colors can be achieved. These coatings cover a large area of RGB color space. The coloration intensities of these nanoscale films can be tuned by the number of deposition steps. The materials have very attractive ON/OFF ratios, electrochemical stabilities, and coloration efficiencies. Reversible color-to-colorless and color-to-color transitions were demonstrated, and the films were further integrated into sandwich cells.
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Affiliation(s)
- Neta Elool Dov
- Department of Organic Chemistry and §Department of Chemical Research Support, Weizmann Institute of Science , 7610001 Rehovot, Israel
| | - Sreejith Shankar
- Department of Organic Chemistry and §Department of Chemical Research Support, Weizmann Institute of Science , 7610001 Rehovot, Israel
| | - Dana Cohen
- Department of Organic Chemistry and §Department of Chemical Research Support, Weizmann Institute of Science , 7610001 Rehovot, Israel
| | - Tatyana Bendikov
- Department of Organic Chemistry and §Department of Chemical Research Support, Weizmann Institute of Science , 7610001 Rehovot, Israel
| | - Katya Rechav
- Department of Organic Chemistry and §Department of Chemical Research Support, Weizmann Institute of Science , 7610001 Rehovot, Israel
| | - Linda J W Shimon
- Department of Organic Chemistry and §Department of Chemical Research Support, Weizmann Institute of Science , 7610001 Rehovot, Israel
| | - Michal Lahav
- Department of Organic Chemistry and §Department of Chemical Research Support, Weizmann Institute of Science , 7610001 Rehovot, Israel
| | - Milko E van der Boom
- Department of Organic Chemistry and §Department of Chemical Research Support, Weizmann Institute of Science , 7610001 Rehovot, Israel
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352
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Zhang KHL, Wu R, Tang F, Li W, Oropeza FE, Qiao L, Lazarov VK, Du Y, Payne DJ, MacManus-Driscoll JL, Blamire MG. Electronic Structure and Band Alignment at the NiO and SrTiO 3 p-n Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2017; 9:26549-26555. [PMID: 28695740 DOI: 10.1021/acsami.7b06025] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Understanding the energetics at the interface, including the alignment of valence and conduction bands, built-in potentials, and ionic and electronic reconstructions, is an important challenge in designing oxide interfaces that have controllable multifunctionalities for novel (opto-)electronic devices. In this work, we report detailed investigations on the heterointerface of wide-band-gap p-type NiO and n-type SrTiO3 (STO). We show that despite a large lattice mismatch (∼7%) and dissimilar crystal structure, high-quality NiO and Li-doped NiO (LNO) thin films can be epitaxially grown on STO(001) substrates through a domain-matching epitaxy mechanism. X-ray photoelectron spectroscopy studies indicate that NiO/STO heterojunctions form a type II "staggered" band alignment. In addition, a large built-in potential of up to 0.97 eV was observed at the interface of LNO and Nb-doped STO (NbSTO). The LNO/NbSTO p-n heterojunctions exhibit not only a large rectification ratio of 2 × 103 but also a large ideality factor of 4.3. The NiO/STO p-n heterojunctions have important implications for applications in photocatalysis and photodetectors as the interface provides favorable energetics for facile separation and transport of photogenerated electrons and holes.
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Affiliation(s)
- Kelvin H L Zhang
- Department of Materials Science & Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Rui Wu
- Department of Materials Science & Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Fengzai Tang
- Department of Materials Science & Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Weiwei Li
- Department of Materials Science & Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Freddy E Oropeza
- Department of Materials, Imperial College London , Exhibition Road, London SW7 2AZ, U.K
| | - Liang Qiao
- School of Materials, The University of Manchester , Manchester M13 9PL, U.K
| | - Vlado K Lazarov
- Department of Physics, University of York , Heslington, York YO10 5DD, U.K
| | - Yingge Du
- Physical Sciences Division, Physical & Computational Sciences Directorate, Pacific Northwest National Laboratory , Richland, Washington 99352, United States
| | - David J Payne
- Department of Materials, Imperial College London , Exhibition Road, London SW7 2AZ, U.K
| | - Judith L MacManus-Driscoll
- Department of Materials Science & Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Mark G Blamire
- Department of Materials Science & Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
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353
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Gnanasekaran L, Hemamalini R, Saravanan R, Ravichandran K, Gracia F, Agarwal S, Gupta VK. Synthesis and characterization of metal oxides (CeO 2 , CuO, NiO, Mn 3 O 4 , SnO 2 and ZnO) nanoparticles as photo catalysts for degradation of textile dyes. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY B-BIOLOGY 2017; 173:43-49. [DOI: 10.1016/j.jphotobiol.2017.05.027] [Citation(s) in RCA: 64] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2017] [Revised: 05/18/2017] [Accepted: 05/19/2017] [Indexed: 11/16/2022]
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354
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Marette A, Poulin A, Besse N, Rosset S, Briand D, Shea H. Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1700880. [PMID: 28603892 DOI: 10.1002/adma.201700880] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2017] [Revised: 03/26/2017] [Indexed: 05/19/2023]
Abstract
Flexible high-voltage thin-film transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a flexible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implements a zinc-tin oxide channel, a thick dielectric stack, and an offset gate. At a source-drain bias of 1 kV, the HVTFT has a 20 µA on-current at a gate voltage bias of 30 V. Their electrical characteristics enable the switching of DEAs which require drive voltages of over 1 kV, making control of an array simpler in comparison to the use of external high-voltage switching. These HVTFTs are integrated in a flexible haptic display consisting of a 4 × 4 matrix of DEAs and HVTFTs. Using a single 1.4 kV supply, each DEA is independently switched by its associated HVTFT, requiring only a 30 V gate voltage for full DEA deflection. The 4 × 4 display operates well even when bent to a 5 mm radius of curvature. By enabling DEA switching at low voltages, flexible metal-oxide HVTFTs enable complex flexible systems with dozens to hundreds of independent DEAs for applications in haptics, Braille displays, and soft robotics.
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Affiliation(s)
- Alexis Marette
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
| | - Alexandre Poulin
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
| | - Nadine Besse
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
| | - Samuel Rosset
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
| | - Danick Briand
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
| | - Herbert Shea
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
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355
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Jiang C, Mu L, Zou J, He Z, Zhong Z, Wang L, Xu M, Wang J, Peng J, Cao Y. Full-color quantum dots active matrix display fabricated by ink-jet printing. Sci China Chem 2017. [DOI: 10.1007/s11426-017-9087-y] [Citation(s) in RCA: 31] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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356
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Guo Q, Cui Y, Yao Y, Ye Y, Yang Y, Liu X, Zhang S, Liu X, Qiu J, Hosono H. A Solution-Processed Ultrafast Optical Switch Based on a Nanostructured Epsilon-Near-Zero Medium. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1700754. [PMID: 28466957 DOI: 10.1002/adma.201700754] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2017] [Revised: 03/22/2017] [Indexed: 06/07/2023]
Abstract
All the optical properties of materials are derived from dielectric function. In spectral region where the dielectric permittivity approaches zero, known as epsilon-near-zero (ENZ) region, the propagating light within the material attains a very high phase velocity, and meanwhile the material exhibits strong optical nonlinearity. The interplay between the linear and nonlinear optical response in these materials thus offers unprecedented pathways for all-optical control and device design. Here the authors demonstrate ultrafast all-optical modulation based on a typical ENZ material of indium tin oxide (ITO) nanocrystals (NCs), accessed by a wet-chemistry route. In the ENZ region, the authors find that the optical response in these ITO NCs is associated with a strong nonlinear character, exhibiting sub-picosecond response time (corresponding to frequencies over 2 THz) and modulation depth up to ≈160%. This large optical nonlinearity benefits from the highly confined geometry in addition to the ENZ enhancement effect of the ITO NCs. Based on these ENZ NCs, the authors successfully demonstrate a fiber optical switch that allows switching of continuous laser wave into femtosecond laser pulses. Combined with facile processibility and tunable optical properties, these solution-processed ENZ NCs may offer a scalable and printable material solution for dynamic photonic and optoelectronic devices.
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Affiliation(s)
- Qiangbing Guo
- Institute of Inorganic Materials, School of Materials Science & Engineering, Zhejiang University, Hangzhou, 310027, China
- State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China
| | - Yudong Cui
- State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yunhua Yao
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062, China
| | - Yuting Ye
- Institute of Inorganic Materials, School of Materials Science & Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yue Yang
- Institute of Inorganic Materials, School of Materials Science & Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Xueming Liu
- State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Shian Zhang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062, China
| | - Xiaofeng Liu
- Institute of Inorganic Materials, School of Materials Science & Engineering, Zhejiang University, Hangzhou, 310027, China
- State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China
| | - Jianrong Qiu
- State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Hideo Hosono
- Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
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357
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Hsu MH, Chang SP, Chang SJ, Wu WT, Li JY. Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering. NANOMATERIALS 2017; 7:nano7070156. [PMID: 28672868 PMCID: PMC5535222 DOI: 10.3390/nano7070156] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2017] [Revised: 06/23/2017] [Accepted: 06/23/2017] [Indexed: 11/16/2022]
Abstract
Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec.
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Affiliation(s)
- Ming-Hung Hsu
- Institute of Microelectronics & Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
| | - Sheng-Po Chang
- Institute of Microelectronics & Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
| | - Shoou-Jinn Chang
- Institute of Microelectronics & Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
| | - Wei-Ting Wu
- Institute of Microelectronics & Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
| | - Jyun-Yi Li
- Institute of Microelectronics & Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
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358
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Shen YF, Zhang C, Yan CG, Chen HQ, Zhang YJ. Fabrication of porous graphitic carbon nitride-titanium dioxide heterojunctions with enhanced photo-energy conversion activity. CHINESE CHEM LETT 2017. [DOI: 10.1016/j.cclet.2017.04.004] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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359
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Khim D, Lin YH, Nam S, Faber H, Tetzner K, Li R, Zhang Q, Li J, Zhang X, Anthopoulos TD. Modulation-Doped In 2 O 3 /ZnO Heterojunction Transistors Processed from Solution. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1605837. [PMID: 28295712 DOI: 10.1002/adma.201605837] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2016] [Revised: 02/03/2017] [Indexed: 06/06/2023]
Abstract
This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.
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Affiliation(s)
- Dongyoon Khim
- Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Yen-Hung Lin
- Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Sungho Nam
- Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Hendrik Faber
- Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Kornelius Tetzner
- Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Ruipeng Li
- Cornell High Energy Synchrotron Source, Wilson Laboratory Cornell University, Ithaca, NY, 14853, USA
| | - Qiang Zhang
- Division of Physical Sciences and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Jun Li
- Division of Physical Sciences and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Xixiang Zhang
- Division of Physical Sciences and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Thomas D Anthopoulos
- Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, UK
- Division of Physical Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
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360
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Hong GR, Lee SS, Park HJ, Jo Y, Kim JY, Lee HS, Kang YC, Ryu BH, Song A, Chung KB, Choi Y, Jeong S. Unraveling the Issue of Ag Migration in Printable Source/Drain Electrodes Compatible with Versatile Solution-Processed Oxide Semiconductors for Printed Thin-Film Transistor Applications. ACS APPLIED MATERIALS & INTERFACES 2017; 9:14058-14066. [PMID: 28387501 DOI: 10.1021/acsami.7b00524] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In recent decades, solution-processable, printable oxide thin-film transistors have garnered a tremendous amount of attention given their potential for use in low-cost, large-area electronics. However, printable metallic source/drain electrodes undergo undesirable electrical/thermal migration at an interfacial stack of the oxide semiconductor and metal electrode. In this study, we report oleic acid-capped Ag nanoparticles that effectively suppress the significant Ag migration and facilitate high field-effect mobilities in oxide transistors. The origin of the role of surface-capped Ag nanoparticles is clarified with comparative studies based on X-ray photoelectron spectroscopy and X-ray absorption spectroscopy.
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Affiliation(s)
- Gyu Ri Hong
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
- Department of Materials Science and Engineering, Korea University , Seoul 136-713, Republic of Korea
| | - Sun Sook Lee
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Hye Jin Park
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Yejin Jo
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Ju Young Kim
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Hoi Sung Lee
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Yun Chan Kang
- Department of Materials Science and Engineering, Korea University , Seoul 136-713, Republic of Korea
| | - Beyong-Hwan Ryu
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Aeran Song
- Division of Physics and Semiconductor Science, Dongguk University , Seoul, 100-715, Korea
| | - Kwun-Bum Chung
- Division of Physics and Semiconductor Science, Dongguk University , Seoul, 100-715, Korea
| | - Youngmin Choi
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Sunho Jeong
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
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361
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Wiśniewska M, Chibowski S, Urban T. Comparison of adsorption affinity of ionic polyacrylamide for the surfaces of selected metal oxides. ADSORPT SCI TECHNOL 2017. [DOI: 10.1177/0263617417702385] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
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362
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Cao X, Li XF, Zhu ZZ. Superlight and Superflexible Three-Dimensional Semiconductor Frameworks A(X≡Y) 4(A=Si, Ge; X/Y=C, B, N) with Tunable Optoelectronic and Mechanical Properties from First-Principles. Chem Asian J 2017; 12:804-810. [DOI: 10.1002/asia.201700064] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2017] [Indexed: 11/08/2022]
Affiliation(s)
- Xinrui Cao
- Department of Physics and Collaborative Innovation Center for; Optoelectronic Semiconductors and Efficient Devices; Fujian Provincial Key Laboratory of Theoretical; and Computational Chemistry; Xiamen University; Xiamen Fujian 361005 P.R. China
| | - Xiao-Fei Li
- School of Optoelectronic Information; University of Electronic Science and Technology of China; Chengdu Sichuan 610054 P.R. China
| | - Zi-Zhong Zhu
- Department of Physics and Collaborative Innovation Center for; Optoelectronic Semiconductors and Efficient Devices; Fujian Provincial Key Laboratory of Theoretical; and Computational Chemistry; Xiamen University; Xiamen Fujian 361005 P.R. China
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363
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Wood SR, Woods KN, Plassmeyer PN, Marsh DA, Johnson DW, Page CJ, Jensen KMØ, Johnson DC. Same Precursor, Two Different Products: Comparing the Structural Evolution of In–Ga–O “Gel-Derived” Powders and Solution-Cast Films Using Pair Distribution Function Analysis. J Am Chem Soc 2017; 139:5607-5613. [DOI: 10.1021/jacs.7b02097] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Affiliation(s)
- Suzannah R. Wood
- Department
of Chemistry and Biochemistry, and Material Science Institute, University of Oregon, Eugene, Oregon 97403, United States
| | - Keenan N. Woods
- Department
of Chemistry and Biochemistry, and Material Science Institute, University of Oregon, Eugene, Oregon 97403, United States
| | - Paul N. Plassmeyer
- Department
of Chemistry and Biochemistry, and Material Science Institute, University of Oregon, Eugene, Oregon 97403, United States
| | - David A. Marsh
- Department
of Chemistry and Biochemistry, and Material Science Institute, University of Oregon, Eugene, Oregon 97403, United States
| | - Darren W. Johnson
- Department
of Chemistry and Biochemistry, and Material Science Institute, University of Oregon, Eugene, Oregon 97403, United States
| | - Catherine J. Page
- Department
of Chemistry and Biochemistry, and Material Science Institute, University of Oregon, Eugene, Oregon 97403, United States
| | | | - David C. Johnson
- Department
of Chemistry and Biochemistry, and Material Science Institute, University of Oregon, Eugene, Oregon 97403, United States
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364
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Abliz A, Gao Q, Wan D, Liu X, Xu L, Liu C, Jiang C, Li X, Chen H, Guo T, Li J, Liao L. Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:10798-10804. [PMID: 28266830 DOI: 10.1021/acsami.6b15275] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Despite intensive research on improvement in electrical performances of ZnO-based thin-film transistors (TFTs), the instability issues have limited their applications for complementary electronics. Herein, we have investigated the effect of nitrogen and hydrogen (N/H) codoping on the electrical performance and reliability of amorphous InGaZnO (α-IGZO) TFTs. The performance and bias stress stability of α-IGZO device were simultaneously improved by N/H plasma treatment with a high field-effect mobility of 45.3 cm2/(V s) and small shifts of threshold voltage (Vth). On the basis of X-ray photoelectron spectroscopy analysis, the improved electrical performances of α-IGZO TFT should be attributed to the appropriate amount of N/H codoping, which could not only control the Vth and carrier concentration efficiently, but also passivate the defects such as oxygen vacancy due to the formation of stable Zn-N and N-H bonds. Meanwhile, low-frequency noise analysis indicates that the average trap density near the α-IGZO/SiO2 interface is reduced by the nitrogen and hydrogen plasma treatment. This method could provide a step toward the development of α-IGZO TFTs for potential applications in next-generation high-definition optoelectronic displays.
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Affiliation(s)
- Ablat Abliz
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Qingguo Gao
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China
| | - Da Wan
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Xingqiang Liu
- Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University , Changsha 410082, China
| | - Lei Xu
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Chuansheng Liu
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Changzhong Jiang
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Xuefei Li
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, Fuzhou University , Fuzhou 350002, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, Fuzhou University , Fuzhou 350002, China
| | - Jinchai Li
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Lei Liao
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
- Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University , Changsha 410082, China
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365
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Byun HR, You EA, Ha YG. Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:7347-7354. [PMID: 28150486 DOI: 10.1021/acsami.6b15798] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve high-performance, ultralow-voltage operation of thin-film transistors (TFTs). In this work, we first report on the facile fabrication of multifunctional hybrid multilayer gate dielectrics with tunable surface energy via a low-temperature solution-process to produce ultralow-voltage organic and amorphous oxide TFTs. The hybrid multilayer dielectric materials are constructed by iteratively stacking bifunctional phosphonic acid-based self-assembled monolayers combined with ultrathin high-k oxide layers. The nanoscopic thickness-controllable hybrid dielectrics exhibit the superior capacitance (up to 970 nF/cm2), insulating property (leakage current densities <10-7 A/cm2), and thermal stability (up to 300 °C) as well as smooth surfaces (root-mean-square roughness <0.35 nm). In addition, the surface energy of the hybrid multilayer dielectrics are easily changed by switching between mono- and bifunctional phosphonic acid-based self-assembled monolayers for compatible fabrication with both organic and amorphous oxide semiconductors. Consequently, the hybrid multilayer dielectrics integrated into TFTs reveal their excellent dielectric functions to achieve high-performance, ultralow-voltage operation (< ± 2 V) for both organic and amorphous oxide TFTs. Because of the easily tunable surface energy, the multifunctional hybrid multilayer dielectrics can also be adapted for various organic and inorganic semiconductors, and metal gates in other device configurations, thus allowing diverse advanced electronic applications including ultralow-power and large-area electronic devices.
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Affiliation(s)
- Hye-Ran Byun
- Department of Chemistry, Kyonggi University , Suwon, Gyeonggi-Do, 16227, Republic of Korea
| | - Eun-Ah You
- Center for Nano-Bio Measurement, Korea Research Institute of Standards and Science , Daejeon, 34113, Republic of Korea
| | - Young-Geun Ha
- Department of Chemistry, Kyonggi University , Suwon, Gyeonggi-Do, 16227, Republic of Korea
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366
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Yu L, Niazi MR, Ngongang Ndjawa GO, Li R, Kirmani AR, Munir R, Balawi AH, Laquai F, Amassian A. Programmable and coherent crystallization of semiconductors. SCIENCE ADVANCES 2017; 3:e1602462. [PMID: 28275737 PMCID: PMC5336352 DOI: 10.1126/sciadv.1602462] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2016] [Accepted: 01/26/2017] [Indexed: 05/28/2023]
Abstract
The functional properties and technological utility of polycrystalline materials are largely determined by the structure, geometry, and spatial distribution of their multitude of crystals. However, crystallization is seeded through stochastic and incoherent nucleation events, limiting the ability to control or pattern the microstructure, texture, and functional properties of polycrystalline materials. We present a universal approach that can program the microstructure of materials through the coherent seeding of otherwise stochastic homogeneous nucleation events. The method relies on creating topographic variations to seed nucleation and growth at designated locations while delaying nucleation elsewhere. Each seed can thus produce a coherent growth front of crystallization with a geometry designated by the shape and arrangement of seeds. Periodic and aperiodic crystalline arrays of functional materials, such as semiconductors, can thus be created on demand and with unprecedented sophistication and ease by patterning the location and shape of the seeds. This approach is used to demonstrate printed arrays of organic thin-film transistors with remarkable performance and reproducibility owing to their demonstrated spatial control over the microstructure of organic and inorganic polycrystalline semiconductors.
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Affiliation(s)
- Liyang Yu
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), and Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Muhammad R. Niazi
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), and Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Guy O. Ngongang Ndjawa
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), and Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Ruipeng Li
- Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY 14850, USA
| | - Ahmad R. Kirmani
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), and Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Rahim Munir
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), and Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Ahmed H. Balawi
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), and Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Frédéric Laquai
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), and Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Aram Amassian
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), and Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
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367
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Faber H, Das S, Lin YH, Pliatsikas N, Zhao K, Kehagias T, Dimitrakopulos G, Amassian A, Patsalas PA, Anthopoulos TD. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution. SCIENCE ADVANCES 2017; 3:e1602640. [PMID: 28435867 PMCID: PMC5375640 DOI: 10.1126/sciadv.1602640] [Citation(s) in RCA: 50] [Impact Index Per Article: 7.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2016] [Accepted: 02/10/2017] [Indexed: 05/20/2023]
Abstract
Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.
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Affiliation(s)
- Hendrik Faber
- Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K
- Corresponding author. (T.D.A.); (H.F.); (P.A.P.)
| | - Satyajit Das
- Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K
| | - Yen-Hung Lin
- Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K
| | - Nikos Pliatsikas
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - Kui Zhao
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Thomas Kehagias
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - George Dimitrakopulos
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - Aram Amassian
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Panos A. Patsalas
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
- Corresponding author. (T.D.A.); (H.F.); (P.A.P.)
| | - Thomas D. Anthopoulos
- Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
- Corresponding author. (T.D.A.); (H.F.); (P.A.P.)
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368
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Viñes F, Lamiel-García O, Chul Ko K, Yong Lee J, Illas F. Systematic study of the effect of HSE functional internal parameters on the electronic structure and band gap of a representative set of metal oxides. J Comput Chem 2017; 38:781-789. [DOI: 10.1002/jcc.24744] [Citation(s) in RCA: 48] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2016] [Revised: 12/22/2016] [Accepted: 01/10/2017] [Indexed: 01/13/2023]
Affiliation(s)
- Francesc Viñes
- Departament de Ciència de Materials i Química Física & Institut de Química Teòrica i Computacional (IQTCUB); Universitat de Barcelona; c/Martí i Franquès 1 Barcelona 08028 Spain
| | - Oriol Lamiel-García
- Departament de Ciència de Materials i Química Física & Institut de Química Teòrica i Computacional (IQTCUB); Universitat de Barcelona; c/Martí i Franquès 1 Barcelona 08028 Spain
| | - Kyoung Chul Ko
- Departament de Ciència de Materials i Química Física & Institut de Química Teòrica i Computacional (IQTCUB); Universitat de Barcelona; c/Martí i Franquès 1 Barcelona 08028 Spain
- Department of Chemistry; Sungkyunkwan University; Suwon 16419 Korea
| | - Jin Yong Lee
- Department of Chemistry; Sungkyunkwan University; Suwon 16419 Korea
| | - Francesc Illas
- Departament de Ciència de Materials i Química Física & Institut de Química Teòrica i Computacional (IQTCUB); Universitat de Barcelona; c/Martí i Franquès 1 Barcelona 08028 Spain
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369
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Park JH, Hwang GT, Kim S, Seo J, Park HJ, Yu K, Kim TS, Lee KJ. Flash-Induced Self-Limited Plasmonic Welding of Silver Nanowire Network for Transparent Flexible Energy Harvester. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1603473. [PMID: 27892631 DOI: 10.1002/adma.201603473] [Citation(s) in RCA: 103] [Impact Index Per Article: 14.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2016] [Revised: 10/08/2016] [Indexed: 06/06/2023]
Abstract
The outstanding performance (sheet resistance of 5 Ω sq-1 at transmittance of 90%) and strongly adhesive (30.7 J m-2 ) silver nanowires (AgNWs) are fabricated using flash-induced plasmonic welding (FPW) based on theoretical research of photothermal interactions. The FPW-processed AgNWs are utilized as electrodes of a transparent flexible energy harvester, and this device exhibits excellent transmittance and high electric output performance. The FPW methodology provides a high-tech solution for transparent flexible electronics.
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Affiliation(s)
- Jung Hwan Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea
| | - Geon-Tae Hwang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea
| | - Shinho Kim
- Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea
| | - Jeongmin Seo
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea
| | - Hong-Jin Park
- BSP Co., Ltd., 126 Beolmal-ro, Dongan-gu, Anyang, Gyeonggi-do, 14057, Republic of Korea
| | - Kyoungsik Yu
- Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea
| | - Taek-Soo Kim
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea
| | - Keon Jae Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea
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370
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Jariwala D, Marks TJ, Hersam MC. Mixed-dimensional van der Waals heterostructures. NATURE MATERIALS 2017; 16:170-181. [PMID: 27479211 DOI: 10.1038/nmat4703] [Citation(s) in RCA: 561] [Impact Index Per Article: 80.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2016] [Accepted: 06/21/2016] [Indexed: 05/18/2023]
Abstract
The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling-bond-free surface will interact with another through vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through non-covalent interactions. We present a succinct and critical survey of emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices. By comparing and contrasting with all-2D vdW heterostructures as well as with competing conventional technologies, we highlight the challenges and opportunities for mixed-dimensional vdW heterostructures.
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Affiliation(s)
- Deep Jariwala
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
| | - Tobin J Marks
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
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371
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Zhang WB, Qu Q, Lai K. High-Mobility Transport Anisotropy in Few-Layer MoO 3 and Its Origin. ACS APPLIED MATERIALS & INTERFACES 2017; 9:1702-1709. [PMID: 27977924 DOI: 10.1021/acsami.6b14255] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The novel two-dimensional semiconductors with high carrier mobility and excellent stability are essential to the next-generation high-speed and low-power nanoelectronic devices. Because of the natural abundance, intrinsic gap, and chemical stability, metal oxides were also recently suggested as potential candidates for electronic materials. However, their carrier mobilities are typically on the order of tens of square centimeters per volt per second, much lower than that for commonly used silicon. By using first-principles calculations and deformation potential theory, we have predicted few-layer MoO3 as chemically stable wide-band-gap semiconductors with a considerably high acoustic-phonon-limited carrier mobility above 3000 cm2 V-1 s-1, which makes them promising candidates for both electron- and hole-transport applications. Moreover, we also find a large in-plane anisotropy of the carrier mobility with a ratio of about 20-30 in this unusual system. Further analysis indicates that, because of the unique charge density distribution of whole valence electrons and the states near the band edge, both the elastic modulus and deformation potential are strongly directionally dependent. Also, the predicted high-mobility transport anisotropy of few-layer MoO3 can be attributed to the synergistic effect of the anisotropy of the elastic modulus and deformation potential. Our results not only give an insightful understanding for the high carrier mobility observed in few-layer MoO3 systems but also reveal the importance of the carrier-transport direction to the device performance.
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Affiliation(s)
- Wei-Bing Zhang
- School of Physics and Electronic Sciences, Changsha University of Science and Technology , Changsha 410004, People's Republic of China
| | - Qian Qu
- School of Physics and Electronic Sciences, Changsha University of Science and Technology , Changsha 410004, People's Republic of China
| | - Kang Lai
- School of Physics and Electronic Sciences, Changsha University of Science and Technology , Changsha 410004, People's Republic of China
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372
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Dahiya AS, Opoku C, Poulin-Vittrant G, Camara N, Daumont C, Barbagiovanni EG, Franzò G, Mirabella S, Alquier D. Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stability. ACS APPLIED MATERIALS & INTERFACES 2017; 9:573-584. [PMID: 28001361 DOI: 10.1021/acsami.6b13472] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The production of high-quality semiconducting nanostructures with optimized electrical, optical, and electromechanical properties is important for the advancement of next-generation technologies. In this context, we herein report on highly obliquely aligned single-crystalline zinc oxide nanosheets (ZnO NSs) grown via the vapor-liquid-solid approach using r-plane (01-12) sapphire as the template surface. The high structural and optical quality of as-grown ZnO NSs has been confirmed using high-resolution transmission electron microscopy and temperature-dependent photoluminescence, respectively. To assess the potential of our NSs as effective building materials in high-performance flexible electronics, we fabricate organic (parylene C)/inorganic (ZnO NS) hybrid field-effect transistor (FET) devices on flexible substrates using room-temperature assembly processes. Extraction of key FET performance parameters suggests that as-grown ZnO NSs can successfully function as excellent n-type semiconducting modules. Such devices are found to consistently show very high on-state currents (Ion) > 40 μA, high field-effect mobility (μeff) > 200 cm2/(V s), exceptionally high on/off current modulation ratio (Ion/off) of around 109, steep subthreshold swing (s-s) < 200 mV/decade, very low hysteresis, and negligible threshold voltage shifts with prolonged electrical stressing (up to 340 min). The present study delivers a concept of integrating high-quality ZnO NS as active semiconducting elements in flexible electronic circuits.
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Affiliation(s)
- Abhishek S Dahiya
- Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France
| | - Charles Opoku
- Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France
| | - Guylaine Poulin-Vittrant
- Université François Rabelais de Tours, INSA-CVL, CNRS, GREMAN UMR 7347 , 3 rue de la Chocolaterie, CS 23410, 41034 Cedex Blois, France
| | - Nicolas Camara
- Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France
| | - Christophe Daumont
- Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France
| | - Eric G Barbagiovanni
- MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita' di Catania , via S. Sofia 64, 95123 Catania, Italy
| | - Giorgia Franzò
- MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita' di Catania , via S. Sofia 64, 95123 Catania, Italy
| | - Salvo Mirabella
- MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita' di Catania , via S. Sofia 64, 95123 Catania, Italy
| | - Daniel Alquier
- Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France
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373
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Deng Q, Li M, Wang J, Zhang P, Jiang K, Zhang J, Hu Z, Chu J. Boosted adsorption–photocatalytic activities and potential lithium intercalation applications of layered potassium hexaniobate nano-family. RSC Adv 2017. [DOI: 10.1039/c7ra03499g] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We demonstrated that the KN nano-family (including KN nanolaminas and nano hollow spheres) can be derived from the same Nb2O5-based hydrothermal reaction.
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Affiliation(s)
- Qinglin Deng
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai)
- Department of Electronic Engineering
- East China Normal University
- Shanghai 200241
- China
| | - Mengjiao Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai)
- Department of Electronic Engineering
- East China Normal University
- Shanghai 200241
- China
| | - Junyong Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai)
- Department of Electronic Engineering
- East China Normal University
- Shanghai 200241
- China
| | - Peng Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai)
- Department of Electronic Engineering
- East China Normal University
- Shanghai 200241
- China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai)
- Department of Electronic Engineering
- East China Normal University
- Shanghai 200241
- China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai)
- Department of Electronic Engineering
- East China Normal University
- Shanghai 200241
- China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai)
- Department of Electronic Engineering
- East China Normal University
- Shanghai 200241
- China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai)
- Department of Electronic Engineering
- East China Normal University
- Shanghai 200241
- China
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374
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Wang Y, Wöll C. IR spectroscopic investigations of chemical and photochemical reactions on metal oxides: bridging the materials gap. Chem Soc Rev 2017; 46:1875-1932. [DOI: 10.1039/c6cs00914j] [Citation(s) in RCA: 130] [Impact Index Per Article: 18.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
In this review, we highlight recent progress (2008–2016) in infrared reflection absorption spectroscopy (IRRAS) studies on oxide powders achieved by using different types of metal oxide single crystals as reference systems.
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Affiliation(s)
- Yuemin Wang
- Institute of Functional Interfaces
- Karlsruhe Institute of Technology
- Eggenstein-Leopoldshafen
- Germany
| | - Christof Wöll
- Institute of Functional Interfaces
- Karlsruhe Institute of Technology
- Eggenstein-Leopoldshafen
- Germany
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375
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Li Y, Yu H, Huang X, Wu Z, Chen M. A simple synthesis method to prepare a molybdenum oxide hole-transporting layer for efficient polymer solar cells. RSC Adv 2017. [DOI: 10.1039/c7ra00303j] [Citation(s) in RCA: 38] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We report a simple synthetic method to prepare amorphous molybdenum oxide (p-MoO3) using a favorably stable peroxomolybdic acid organosol as the precursor solution prepared by an ultrasonic reaction for the first time.
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Affiliation(s)
- Yanping Li
- School of Physics and Optoelectronics
- South China University of Technology
- Guangzhou 510640
- China
- School of Materials Science & Engineering
| | - Huangzhong Yu
- School of Physics and Optoelectronics
- South China University of Technology
- Guangzhou 510640
- China
| | - Xinxin Huang
- School of Physics and Optoelectronics
- South China University of Technology
- Guangzhou 510640
- China
- School of Materials Science & Engineering
| | - Zuping Wu
- School of Physics and Optoelectronics
- South China University of Technology
- Guangzhou 510640
- China
- School of Materials Science & Engineering
| | - Mingdong Chen
- School of Physics and Optoelectronics
- South China University of Technology
- Guangzhou 510640
- China
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376
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Selvamani V, Suryanarayanan V, Velayutham D, Gopukumar S. High lithium anodic performance of N-doped porous biocarbon-integrated indium sulfide thin nanosheets. NEW J CHEM 2017. [DOI: 10.1039/c6nj04026h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Mesoporous indium(iii)sulfide grafts with N-doped porous biocarbon via cost effective wet ball milling, and exhibits a stable capacity of around 407 and 241 mA h g−1 (at 4.0 and 10.0 A g−1), making it a promising alternative anode material for lithium ion batteries.
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Affiliation(s)
- V. Selvamani
- Electrochemical Process Engineering Division
- CSIR-Central Electrochemical Research Institute
- Karaikudi
- India
- Academy of Scientific and Innovative Research (AcSIR)
| | - V. Suryanarayanan
- Electrochemical Process Engineering Division
- CSIR-Central Electrochemical Research Institute
- Karaikudi
- India
- CSIR-Network Institutes of Solar Energy (CSIR-NISE)
| | - D. Velayutham
- Electrochemical Process Engineering Division
- CSIR-Central Electrochemical Research Institute
- Karaikudi
- India
- CSIR-Network Institutes of Solar Energy (CSIR-NISE)
| | - S. Gopukumar
- CSIR-Network Institutes of Solar Energy (CSIR-NISE)
- Karaikudi
- India
- Electrochemical Power Sources Division
- CSIR-Central Electrochemical Research Institute
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377
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Zhao G, Zhang Y, Zhang L, Ye ZG, Ren W, Xu F, Wang S, Liu M, Zhang X. 3D Conformal Modification of Electrospun Silk Nanofibers with Nanoscaled ZnO Deposition for Enhanced Photocatalytic Activity. ACS Biomater Sci Eng 2016; 3:2900-2906. [PMID: 33418711 DOI: 10.1021/acsbiomaterials.6b00548] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
Nanostructured metal oxide materials have drawn great attention because of their enhanced semiconducting, electrical, optical, sensing, and chemical catalyzing properties. The application of metal oxides in biomedicine has recently emerged as a promising field, especially in the format of organic/metal oxide composites. However, the existing methods for fabricating organic/metal oxide materials revealed limitations on the precise control over the deposition of metal oxides and the maintenance of organic nanostructures. Here, we developed an approach for the fabrication of composite materials by depositing metal oxides on the nanostructured organic templates through atomic layer deposition (ALD). With this method, we fabricated a series of silk fibroin/ZnO composites at varied deposition temperatures. The results demonstrated that the ZnO layer had a 3D conformality and hexagonal wurtzite structure, and the deposition thickness was well controlled. The photocatalytic activity of silk/ZnO composites was confirmed by the photodegradation of Rh-B under UV exposure, and the efficiency was found to be temperature dependent. These results demonstrated the successful integration of organic materials with metal oxides through an easy and controllable approach for the development of multifunctional organic/metal oxide biomaterials.
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Affiliation(s)
| | | | | | - Zuo-Guang Ye
- Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, B.C., V5A 1S6, Canada
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378
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379
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Hong GR, Lee SS, Jo Y, Choi MJ, Kang YC, Ryu BH, Chung KB, Choi Y, Jeong S. Extremely Low-Cost, Scalable Oxide Semiconductors Employing Poly(acrylic acid)-Decorated Carbon Nanotubes for Thin-Film Transistor Applications. ACS APPLIED MATERIALS & INTERFACES 2016; 8:29858-29865. [PMID: 27762139 DOI: 10.1021/acsami.6b08950] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
In this study, we report for the first time a simple bar-coating process of soluble metal oxide semiconductors, consuming the 0.1 g of precursor solution in 4 in. sized devices with a cost of only $0.05. To resolve the issue of critical degradation in device performance observable in slow-evaporation-based film formation processes, we incorporate the unprecedentedly developed, poly(acrylic acid)-decorated multiwalled carbon nanotubes (MWNTs) in oxide semiconductors. It is demonstrated that a field-effect mobility is improved to the value of 7.34 cm2/(V s) (improvement by a factor of 2) without any critical variation in threshold voltage and on/off current ratio.
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Affiliation(s)
- Gyu Ri Hong
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
- Department of Materials Science and Engineering, Korea University , Seoul 136-713, Republic of Korea
| | - Sun Sook Lee
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Yejin Jo
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Min Jun Choi
- Division of Physics and Semiconductor Science, Dongguk University , Seoul 04620, Korea
| | - Yun Chan Kang
- Department of Materials Science and Engineering, Korea University , Seoul 136-713, Republic of Korea
| | - Beyong-Hwan Ryu
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Kwun-Bum Chung
- Division of Physics and Semiconductor Science, Dongguk University , Seoul 04620, Korea
| | - Youngmin Choi
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
| | - Sunho Jeong
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea
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380
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Zhang KHL, Xi K, Blamire MG, Egdell RG. P-type transparent conducting oxides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:383002. [PMID: 27459942 DOI: 10.1088/0953-8984/28/38/383002] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of 'chemical modulation of the valence band' to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d (10) orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu(+)-based delafossites, layered oxychalcogenides, nd (6) spinel oxides, Cr(3+)-based oxides (3d (3)) and post-transition metal oxides with lone pair state (ns (2)). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.
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Affiliation(s)
- Kelvin H L Zhang
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
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381
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Secor EB, Smith J, Marks TJ, Hersam MC. High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes. ACS APPLIED MATERIALS & INTERFACES 2016; 8:17428-17434. [PMID: 27327555 DOI: 10.1021/acsami.6b02730] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm(2)/V·s and current on/off ratio of ∼10(5). The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.
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Affiliation(s)
- Ethan B Secor
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Jeremy Smith
- Department of Chemistry and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
- Department of Chemistry and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
- Department of Chemistry and the Materials Research Center, Northwestern University , Evanston, Illinois 60208, United States
- Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
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382
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Sun MJ, Cao X, Cao Z. Si(C≡C)4-Based Single-Crystalline Semiconductor: Diamond-like Superlight and Superflexible Wide-Bandgap Material for the UV Photoconductive Device. ACS APPLIED MATERIALS & INTERFACES 2016; 8:16551-16554. [PMID: 27334253 DOI: 10.1021/acsami.6b05502] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A wide-bandgap SiC4 semiconductor with low density and high elasticity has been designed and characterized by ab initio molecular dynamics simulations and first-principles calculations. The through-space conjugation among the d orbitals of Si and the π* orbitals of ethynyl moieties can remarkably enhance the photoconductivity. This new-type superlight and superflexible semiconductor is predicted to have unique electronic, optical, and mechanical properties, and it is a quite promising material for the high-performance UV optoelectronic devices suitable for various practical demands in a complex environment.
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Affiliation(s)
- Ming-Jun Sun
- State Key Laboratory of Physical Chemistry of Solid Surfaces and Department of Chemistry, College of Chemistry and Chemical Engineering, and ‡Institute of Theoretical Physics, Department of Physics, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University , Xiamen 361005, China
| | - Xinrui Cao
- State Key Laboratory of Physical Chemistry of Solid Surfaces and Department of Chemistry, College of Chemistry and Chemical Engineering, and ‡Institute of Theoretical Physics, Department of Physics, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University , Xiamen 361005, China
| | - Zexing Cao
- State Key Laboratory of Physical Chemistry of Solid Surfaces and Department of Chemistry, College of Chemistry and Chemical Engineering, and ‡Institute of Theoretical Physics, Department of Physics, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University , Xiamen 361005, China
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383
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Wang B, Zeng L, Huang W, Melkonyan FS, Sheets WC, Chi L, Bedzyk MJ, Marks TJ, Facchetti A. Carbohydrate-Assisted Combustion Synthesis To Realize High-Performance Oxide Transistors. J Am Chem Soc 2016; 138:7067-74. [DOI: 10.1021/jacs.6b02309] [Citation(s) in RCA: 53] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Binghao Wang
- Department
of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren’ai Road, Suzhou 215123, China
| | - Li Zeng
- Applied
Physics Program, Materials Science and Engineering Department and
the Materials Research Center, Northwestern University, 2220 Campus
Drive, Evanston, Illinois 60208, United States
| | - Wei Huang
- Department
of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Ferdinand S. Melkonyan
- Department
of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - William C. Sheets
- Polyera Corporation, 8045 Lamon
Avenue, Skokie, Illinois 60077, United States
| | - Lifeng Chi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren’ai Road, Suzhou 215123, China
| | - Michael J. Bedzyk
- Applied
Physics Program, Materials Science and Engineering Department and
the Materials Research Center, Northwestern University, 2220 Campus
Drive, Evanston, Illinois 60208, United States
| | - Tobin J. Marks
- Department
of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Applied
Physics Program, Materials Science and Engineering Department and
the Materials Research Center, Northwestern University, 2220 Campus
Drive, Evanston, Illinois 60208, United States
| | - Antonio Facchetti
- Department
of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Polyera Corporation, 8045 Lamon
Avenue, Skokie, Illinois 60077, United States
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