4151
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Dong X, Shi Y, Huang W, Chen P, Li LJ. Electrical detection of DNA hybridization with single-base specificity using transistors based on CVD-grown graphene sheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2010; 22:1649-53. [PMID: 20496398 DOI: 10.1002/adma.200903645] [Citation(s) in RCA: 281] [Impact Index Per Article: 20.1] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Affiliation(s)
- Xiaochen Dong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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4152
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Papasimakis N, Luo Z, Shen ZX, De Angelis F, Di Fabrizio E, Nikolaenko AE, Zheludev NI. Graphene in a photonic metamaterial. OPTICS EXPRESS 2010; 18:8353-8359. [PMID: 20588680 DOI: 10.1364/oe.18.008353] [Citation(s) in RCA: 50] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
We demonstrate a photonic metamaterial that shows extraordinary sensitivity to the presence of a single atomic layer of graphene on its surface. Metamaterial's optical transmission increases multi-fold at the resonance frequency linked to the Fano-type plasmonic mode supported by the periodic metallic nanostructure. The experiments were performed with chemical vapor deposited (CVD) graphene covering a number of size-scaled metamaterial samples with plasmonic modes at different frequencies ranging from 167 to 187 Thz.
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Affiliation(s)
- Nikitas Papasimakis
- Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom
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4153
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Seol JH, Jo I, Moore AL, Lindsay L, Aitken ZH, Pettes MT, Li X, Yao Z, Huang R, Broido D, Mingo N, Ruoff RS, Shi L. Two-Dimensional Phonon Transport in Supported Graphene. Science 2010; 328:213-6. [DOI: 10.1126/science.1184014] [Citation(s) in RCA: 1488] [Impact Index Per Article: 106.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
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4154
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Shao Y, Wang J, Wu H, Liu J, Aksay I, Lin Y. Graphene Based Electrochemical Sensors and Biosensors: A Review. ELECTROANAL 2010. [DOI: 10.1002/elan.200900571] [Citation(s) in RCA: 2514] [Impact Index Per Article: 179.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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4155
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Yan SC, Li ZS, Zou ZG. Photodegradation of rhodamine B and methyl orange over boron-doped g-C3N4 under visible light irradiation. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2010; 26:3894-901. [PMID: 20175583 DOI: 10.1021/la904023j] [Citation(s) in RCA: 745] [Impact Index Per Article: 53.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Graphitic carbon nitride (g-C(3)N(4)) and boron-doped g-C(3)N(4) were prepared by heating melamine and the mixture of melamine and boron oxide, respectively. X-ray diffraction, X-ray photoelectron spectroscopy, and UV-vis spectra were used to describe the properties of as-prepared samples. The electron paramagnetic resonance was used to detect the active species for the photodegradation reaction over g-C(3)N(4). The photodegradation mechanisms for two typical dyes, rhodamine B (Rh B) and methyl orange (MO), are proposed based on our comparison experiments. In the g-C(3)N(4) photocatalysis system, the photodegradation of Rh B and MO is attributed to the direct hole oxidation and overall reaction, respectively; however, for the MO photodegradation the reduction process initiated by photogenerated electrons is a major photocatalytic process compared with the oxidation process induced by photogenerated holes. Boron doping for g-C(3)N(4) can promote photodegradation of Rh B because the boron doping improves the dye adsorption and light absorption of catalyst.
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Affiliation(s)
- S C Yan
- Eco-Materials and Renewable Energy Research Center, Department of Physics, Nanjing University, Nanjing 210093, PR China
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4156
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Shin YJ, Wang Y, Huang H, Kalon G, Wee ATS, Shen Z, Bhatia CS, Yang H. Surface-energy engineering of graphene. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2010; 26:3798-802. [PMID: 20158275 DOI: 10.1021/la100231u] [Citation(s) in RCA: 118] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69 degrees on SiC substrates to 92 degrees on graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single-, bi-, and multilayer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and the correlation between the level of disorder and wettability is reported. By using a low-power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices.
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Affiliation(s)
- Young Jun Shin
- Department of Electrical Engineering and Computer Engineering, National University of Singapore, Singapore 117576
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4157
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Yang W, Ratinac K, Ringer S, Thordarson P, Gooding J, Braet F. Kohlenstoffnanomaterialien für Biosensoren: Nanoröhren oder Graphen - was eignet sich besser? Angew Chem Int Ed Engl 2010. [DOI: 10.1002/ange.200903463] [Citation(s) in RCA: 53] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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4158
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Yang W, Ratinac K, Ringer S, Thordarson P, Gooding J, Braet F. Carbon Nanomaterials in Biosensors: Should You Use Nanotubes or Graphene? Angew Chem Int Ed Engl 2010; 49:2114-38. [DOI: 10.1002/anie.200903463] [Citation(s) in RCA: 1192] [Impact Index Per Article: 85.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
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4159
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Dua V, Surwade S, Ammu S, Agnihotra S, Jain S, Roberts K, Park S, Ruoff R, Manohar S. All-Organic Vapor Sensor Using Inkjet-Printed Reduced Graphene Oxide. Angew Chem Int Ed Engl 2010. [DOI: 10.1002/ange.200905089] [Citation(s) in RCA: 86] [Impact Index Per Article: 6.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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4160
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Doh YJ, Yi GC. Nonvolatile memory devices based on few-layer graphene films. NANOTECHNOLOGY 2010; 21:105204. [PMID: 20160337 DOI: 10.1088/0957-4484/21/10/105204] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
We report on the electrical characteristics of few-layer graphene (FLG) field-effect devices with their various thicknesses. In combination with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)], FLG/ferroelectric devices exhibited nonvolatile resistance changes due to a polarization switching of the P(VDF/TrFE) layer. The bistability and retention properties were highly sensitive to the FLG thickness, which is attributed to a charge screening effect in FLG films.
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Affiliation(s)
- Yong-Joo Doh
- Department of Display and Semiconductor Physics, Sejong Campus, Korea University, Chungnam-Do 339-800, Republic of Korea
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4161
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Kim J, Heo SB, Gu GH, Suh JS. Fabrication of graphene flakes composed of multi-layer graphene sheets using a thermal plasma jet system. NANOTECHNOLOGY 2010; 21:095601. [PMID: 20110587 DOI: 10.1088/0957-4484/21/9/095601] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
We have developed a method to fabricate graphene flakes composed of high quality multi-layer graphene sheets using a thermal plasma jet system. A carbon atomic beam was generated by injecting ethanol into Ar plasma continuously; the beam then flowed through a carbon tube attached to the anode. Graphene was made by epitaxial growth where a carbon atomic beam, having the proper energy, collided with a graphite plate. The graphene fabricated was very pure and showed a relatively good crystalline structure. We have demonstrated that the number of layers of graphene sheets could be controlled by controlling the rate of ethanol injection. Our process is a continuous process with a relatively high yield (approximately 8%).
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Affiliation(s)
- Juhan Kim
- Department of Chemistry, Seoul National University, Seoul, Republic of Korea
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4162
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Poirier W, Schopfer F. Can graphene set new standards? NATURE NANOTECHNOLOGY 2010; 5:171-172. [PMID: 20203618 DOI: 10.1038/nnano.2010.40] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
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4163
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Bai J, Zhong X, Jiang S, Huang Y, Duan X. Graphene nanomesh. NATURE NANOTECHNOLOGY 2010; 5:190-4. [PMID: 20154685 PMCID: PMC2901100 DOI: 10.1038/nnano.2010.8] [Citation(s) in RCA: 586] [Impact Index Per Article: 41.9] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2009] [Accepted: 01/12/2010] [Indexed: 05/19/2023]
Abstract
Graphene has significant potential for application in electronics, but cannot be used for effective field-effect transistors operating at room temperature because it is a semimetal with a zero bandgap. Processing graphene sheets into nanoribbons with widths of less than 10 nm can open up a bandgap that is large enough for room-temperature transistor operation, but nanoribbon devices often have low driving currents or transconductances. Moreover, practical devices and circuits will require the production of dense arrays of ordered nanoribbons, which remains a significant challenge. Here, we report the production of a new graphene nanostructure--which we call a graphene nanomesh--that can open up a bandgap in a large sheet of graphene to create a semiconducting thin film. The nanomeshes are prepared using block copolymer lithography and can have variable periodicities and neck widths as low as 5 nm. Graphene nanomesh field-effect transistors can support currents nearly 100 times greater than individual graphene nanoribbon devices, and the on-off ratio, which is comparable with the values achieved in individual nanoribbon devices, can be tuned by varying the neck width. The block copolymer lithography approach used to make the nanomesh devices is intrinsically scalable and could allow for the rational design and fabrication of graphene-based devices and circuits with standard semiconductor processing.
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Affiliation(s)
- Jingwei Bai
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA
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4164
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Caldwell JD, Anderson TJ, Culbertson JC, Jernigan GG, Hobart KD, Kub FJ, Tadjer MJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Technique for the dry transfer of epitaxial graphene onto arbitrary substrates. ACS NANO 2010; 4:1108-14. [PMID: 20099904 DOI: 10.1021/nn901585p] [Citation(s) in RCA: 75] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
To make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape. Subsequent Hall effect measurements illustrated that minimal degradation in the carrier mobility was induced following the transfer process in lithographically patterned devices. Correspondingly, a large drop in the carrier concentration was observed following the transfer process, supporting the notion that a gradient in the carrier density is present in C-face EG, with lower values being observed in layers further removed from the SiC interface. X-ray photoemission spectra collected from EG films attached to the transfer tape revealed the presence of atomic Si within the EG layers, which may indicate the identity of the unknown intrinsic dopant in EG. Finally, this transfer process is shown to enable EG films amenable for use in device fabrication on arbitrary substrates and films that are deemed most beneficial to carrier transport, as flexible electronic devices or optically transparent contacts.
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4165
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Gao JH, Fujita D, Xu MS, Onishi K, Miyamoto S. Unique synthesis of few-layer graphene films on carbon-doped Pt(83)Rh(17) surfaces. ACS NANO 2010; 4:1026-1032. [PMID: 20104857 DOI: 10.1021/nn901255u] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
We report a unique synthesis of single- and few-layer graphene films on carbon-doped Pt(83)Rh(17) surfaces by surface segregation and precipitation. The ultrathin graphene films were characterized by atomic force microscopy, Auger electron spectroscopy, and micro-Raman spectroscopy measurements, providing evidence of graphene film thickness and structural quality. The G and 2D band intensity images from micro-Raman spectroscopy measurements confirm that the graphene films with different coverage have very limited defects. Additionally, the 2D band peak can be well-fitted by a single Lozentian peak, indicating that graphene films are characteristic of single layer graphene. Graphene film thickness can be determined by analysis of Auger spectra, indicating that graphene films after 850 degrees C annealing mainly consist of monolayer graphene. By precise adjustment of annealing temperature, graphene film thickness and area size can be controlled and uniform large-area single-layer and double-layer graphene can be achieved.
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Affiliation(s)
- Jian-Hua Gao
- Advanced Nano Characterization Center, National Institute forMaterials Science, Ibaraki 305-0047, Japan.
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4166
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Ratinac KR, Yang W, Ringer SP, Braet F. Toward ubiquitous environmental gas sensors-capitalizing on the promise of graphene. ENVIRONMENTAL SCIENCE & TECHNOLOGY 2010; 44:1167-1176. [PMID: 20099803 DOI: 10.1021/es902659d] [Citation(s) in RCA: 88] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Atomically thin sheets of carbon known as "graphene" have captured the imagination of much of the scientific world during the past few years. Although these single sheets of graphite were under our noses for years-within technologies ranging from the humble pencil, which has been around since at least 1565 (Petroski, H. The Pencil: A History of Design and Circumstance; Alfred A. Knopf: New York, 1993), to modern nuclear reactors-graphene was merely considered as part of graphite's crystal structure until 2004, when Novoselov, Geim, and colleagues (Science 2004, 306, 666-669) first presented some of the surprising electrical properties of graphene layers they had isolated by mechanically peeling sheets off graphite crystals. Today, graphene's unique electronic structures and properties, bolstered by other intriguing properties discovered in the intervening years, threaten the dominance of carbon nanotubes, a more mature allotrope of carbon, in potential applications from electronics to sensors. In this review, we will consider the promise of graphene for producing small-scale gas sensors for environmental monitoring.
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Affiliation(s)
- Kyle R Ratinac
- Australian Key Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006, Australia.
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4167
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Zhang Y, Tsu R. Binding graphene sheets together using silicon: graphene/silicon superlattice. NANOSCALE RESEARCH LETTERS 2010; 5:805-808. [PMID: 20672119 PMCID: PMC2893836 DOI: 10.1007/s11671-010-9561-x] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/01/2010] [Accepted: 02/03/2010] [Indexed: 05/29/2023]
Abstract
We propose a superlattice consisting of graphene and monolayer thick Si sheets and investigate it using a first-principles density functional theory. The Si layer is found to not only strengthen the interlayer binding between the graphene sheets compared to that in graphite, but also inject electrons into graphene, yet without altering the most unique property of graphene: the Dirac fermion-like electronic structure. The superlattice approach represents a new direction for exploring basic science and applications of graphene-based materials.
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Affiliation(s)
- Yong Zhang
- Department of Electrical and Computer Engineering and Center for Optoelectronics, University of North Carolina at Charlotte, Charlotte, NC, 28223, USA.
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4168
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Lee Y, Bae S, Jang H, Jang S, Zhu SE, Sim SH, Song YI, Hong BH, Ahn JH. Wafer-scale synthesis and transfer of graphene films. NANO LETTERS 2010; 10:490-3. [PMID: 20044841 DOI: 10.1021/nl903272n] [Citation(s) in RCA: 419] [Impact Index Per Article: 29.9] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on Ni and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 +/- 70 and 550 +/- 50 cm(2)/(V s) at drain bias of -0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was approximately 6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.
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Affiliation(s)
- Youngbin Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University,Suwon 440-746, Korea
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4169
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Robinson J, Weng X, Trumbull K, Cavalero R, Wetherington M, Frantz E, Labella M, Hughes Z, Fanton M, Snyder D. Nucleation of epitaxial graphene on SiC(0001). ACS NANO 2010; 4:153-158. [PMID: 20000439 DOI: 10.1021/nn901248j] [Citation(s) in RCA: 31] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
A promising route for the synthesis of large-area graphene, suitable for standard device fabrication techniques, is the sublimation of silicon from silicon carbide at elevated temperatures (>1200 degrees C). Previous reports suggest that graphene nucleates along the (110n) plane, known as terrace step edges, on the silicon carbide surface. However, to date, a fundamental understanding of the nucleation of graphene on silicon carbide is lacking. We provide the first direct evidence that nucleation of epitaxial graphene on silicon carbide occurs along the (110n) plane and show that the nucleated graphene quality improves as the synthesis temperature is increased. Additionally, we find that graphene on the (110n) plane can be significantly thicker than its (0001) counterpart and appears not to have a thickness limit. Finally, we find that graphene along the (110n) plane can contain a high density of structural defects, often the result of the underlying substrate, which will undoubtedly degrade the electronic properties of the material. Addressing the presence of non-uniform graphene that may contain structural defects at terrace step edges will be key to the development of a large-scale graphene technology derived from silicon carbide.
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Affiliation(s)
- Joshua Robinson
- The Electro-Optics Center, Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
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4170
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Yamaguchi H, Eda G, Mattevi C, Kim H, Chhowalla M. Highly uniform 300 mm wafer-scale deposition of single and multilayered chemically derived graphene thin films. ACS NANO 2010; 4:524-528. [PMID: 20050640 DOI: 10.1021/nn901496p] [Citation(s) in RCA: 63] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO(2)/Si wafers is reported. We demonstrate that the very thin films can be lifted off to form uniform membranes that can be free-standing or transferred onto any substrate. Detailed maps of thickness using Raman spectroscopy and atomic force microscopy height profiles reveal that the film thickness is very uniform and highly controllable, ranging from 1-2 layers up to 30 layers. After reduction using a variety of methods, the CDG films are transparent and electrically active with FET devices yielding high mobilities of approximately 15 cm(2)/(V s) and sheet resistance of approximately 1 kOmega/sq at approximately 70% transparency.
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Affiliation(s)
- Hisato Yamaguchi
- Department of Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, USA
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4171
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4172
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Kumar S, McEvoy N, Lutz T, Keeley GP, Nicolosi V, Murray CP, Blau WJ, Duesberg GS. Gas phase controlled deposition of high quality large-area graphene films. Chem Commun (Camb) 2010; 46:1422-4. [DOI: 10.1039/b919725g] [Citation(s) in RCA: 40] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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4173
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Choi EK, Jeon IY, Oh SJ, Baek JB. “Direct” grafting of linear macromolecular “wedges” to the edge of pristine graphite to prepare edge-functionalized graphene-based polymer composites. ACTA ACUST UNITED AC 2010. [DOI: 10.1039/c0jm01728k] [Citation(s) in RCA: 33] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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4174
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Kauffman DR, Star A. Graphene versus carbon nanotubes for chemical sensor and fuel cell applications. Analyst 2010; 135:2790-7. [DOI: 10.1039/c0an00262c] [Citation(s) in RCA: 137] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
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4175
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Fang M, Wang K, Lu H, Yang Y, Nutt S. Single-layer graphene nanosheets with controlled grafting of polymer chains. ACTA ACUST UNITED AC 2010. [DOI: 10.1039/b919078c] [Citation(s) in RCA: 386] [Impact Index Per Article: 27.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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4176
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Zhu C, Guo S, Wang P, Xing L, Fang Y, Zhai Y, Dong S. One-pot, water-phase approach to high-quality graphene/TiO2 composite nanosheets. Chem Commun (Camb) 2010; 46:7148-50. [DOI: 10.1039/c0cc01459a] [Citation(s) in RCA: 177] [Impact Index Per Article: 12.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
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4177
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Cui Y, Fu Q, Bao X. Dynamic observation of layer-by-layer growth and removal of graphene on Ru(0001). Phys Chem Chem Phys 2010; 12:5053-7. [DOI: 10.1039/c000719f] [Citation(s) in RCA: 50] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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4178
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4179
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Dong X, Su CY, Zhang W, Zhao J, Ling Q, Huang W, Chen P, Li LJ. Ultra-large single-layer graphene obtained from solution chemical reduction and its electrical properties. Phys Chem Chem Phys 2010; 12:2164-9. [DOI: 10.1039/b914546j] [Citation(s) in RCA: 153] [Impact Index Per Article: 10.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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4180
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Shao Y, Wang J, Engelhard M, Wang C, Lin Y. Facile and controllable electrochemical reduction of graphene oxide and its applications. ACTA ACUST UNITED AC 2010. [DOI: 10.1039/b917975e] [Citation(s) in RCA: 703] [Impact Index Per Article: 50.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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4181
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Li X, Li C, Zhu H, Wang K, Wei J, Li X, Xu E, Li Z, Luo S, Lei Y, Wu D. Hybrid thin films of graphene nanowhiskers and amorphous carbon as transparent conductors. Chem Commun (Camb) 2010; 46:3502-4. [DOI: 10.1039/c002092c] [Citation(s) in RCA: 32] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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4182
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Hofrichter J, Szafranek BN, Otto M, Echtermeyer TJ, Baus M, Majerus A, Geringer V, Ramsteiner M, Kurz H. Synthesis of graphene on silicon dioxide by a solid carbon source. NANO LETTERS 2010; 10:36-42. [PMID: 20028105 DOI: 10.1021/nl902558x] [Citation(s) in RCA: 25] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
We report on a method for the fabrication of graphene on a silicon dioxide substrate by solid-state dissolution of an overlying stack of a silicon carbide and a nickel thin film. The carbon dissolves in the nickel by rapid thermal annealing. Upon cooling, the carbon segregates to the nickel surface forming a graphene layer over the entire nickel surface. By wet etching of the nickel layer, the graphene layer was allowed to settle on the original substrate. Scanning tunneling microscopy (STM) as well as Raman spectroscopy has been performed for characterization of the layers. Further insight into the morphology of the layers has been gained by Raman mapping indicating micrometer-size graphene grains. Devices for electrical measurement have been manufactured exhibiting a modulation of the transfer current by backgate electric fields. The presented approach allows for mass fabrication of polycrystalline graphene without transfer steps while using only CMOS compatible process steps.
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Affiliation(s)
- Jens Hofrichter
- Advanced Microelectronic Center Aachen, AMO GmbH, Otto-Blumenthal-Strasse 25, Aachen, Germany.
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4183
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4184
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Zhang W, Carravetta V, Li Z, Luo Y, Yang J. Oxidation states of graphene: Insights from computational spectroscopy. J Chem Phys 2009; 131:244505. [DOI: 10.1063/1.3276339] [Citation(s) in RCA: 82] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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4185
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Whitesides R, Frenklach M. Detailed Kinetic Monte Carlo Simulations of Graphene-Edge Growth. J Phys Chem A 2009; 114:689-703. [DOI: 10.1021/jp906541a] [Citation(s) in RCA: 106] [Impact Index Per Article: 7.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Russell Whitesides
- Department of Mechanical Engineering, University of California, and Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
| | - Michael Frenklach
- Department of Mechanical Engineering, University of California, and Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
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4186
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Li X, Cai W, Colombo L, Ruoff RS. Evolution of graphene growth on Ni and Cu by carbon isotope labeling. NANO LETTERS 2009; 9:4268-72. [PMID: 19711970 DOI: 10.1021/nl902515k] [Citation(s) in RCA: 571] [Impact Index Per Article: 38.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
Abstract
Large-area graphene growth is required for the development and production of electronic devices. Recently, chemical vapor deposition (CVD) of hydrocarbons has shown some promise in growing large-area graphene or few-layer graphene films on metal substrates such as Ni and Cu. It has been proposed that CVD growth of graphene on Ni occurs by a C segregation or precipitation process whereas graphene on Cu grows by a surface adsorption process. Here we used carbon isotope labeling in conjunction with Raman spectroscopic mapping to track carbon during the growth process. The data clearly show that at high temperatures sequentially introduced isotopic carbon diffuses into the Ni first, mixes, and then segregates and precipitates at the surface of Ni forming graphene and/or graphite with a uniform mixture of (12)C and (13)C as determined by the peak position of the Raman G-band peak. On the other hand, graphene growth on Cu is clearly by surface adsorption where the spatial distribution of (12)C and (13)C follows the precursor time sequence and the linear growth rate ranges from about 1 to as high as 6 mum/min depending upon Cu grain orientation. This data is critical in guiding the graphene growth process as we try to achieve the highest quality graphene for electronic devices.
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Affiliation(s)
- Xuesong Li
- Department of Mechanical Engineering and the Texas Materials Institute, 1 University Station C2200, The University of Texas at Austin, Austin, Texas 78712-0292, USA
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4187
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Xu K, Cao P, Heath JR. Scanning tunneling microscopy characterization of the electrical properties of wrinkles in exfoliated graphene monolayers. NANO LETTERS 2009; 9:4446-51. [PMID: 19852488 DOI: 10.1021/nl902729p] [Citation(s) in RCA: 82] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We report on the scanning tunneling microscopy study of a new class of corrugations in exfoliated monolayer graphene sheets, that is, wrinkles approximately 10 nm in width and approximately 3 nm in height. We found such corrugations to be ubiquitous in graphene and have distinctly different properties when compared to other regions of graphene. In particular, a "three-for-six" triangular pattern of atoms is exclusively and consistently observed on wrinkles, suggesting the local curvature of the wrinkle provides a sufficient perturbation to break the 6-fold symmetry of the graphene lattice. Through scanning tunneling spectroscopy, we further demonstrate that the wrinkles have lower electrical conductance and are characterized by the presence of midgap states, which is in agreement with recent theoretical predictions. The observed wrinkles are likely important for understanding the electrical properties of graphene.
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Affiliation(s)
- Ke Xu
- Division of Chemistry and Chemical Engineering, Kavli Nanoscience Institute, California Institute of Technology, MC 127-72, Pasadena, California 91125, USA
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4188
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Li X, Zhu Y, Cai W, Borysiak M, Han B, Chen D, Piner RD, Colombo L, Ruoff RS. Transfer of large-area graphene films for high-performance transparent conductive electrodes. NANO LETTERS 2009; 9:4359-63. [PMID: 19845330 DOI: 10.1021/nl902623y] [Citation(s) in RCA: 1141] [Impact Index Per Article: 76.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Graphene, a two-dimensional monolayer of sp(2)-bonded carbon atoms, has been attracting great interest due to its unique transport properties. One of the promising applications of graphene is as a transparent conductive electrode owing to its high optical transmittance and conductivity. In this paper, we report on an improved transfer process of large-area graphene grown on Cu foils by chemical vapor deposition. The transferred graphene films have high electrical conductivity and high optical transmittance that make them suitable for transparent conductive electrode applications. The improved transfer processes will also be of great value for the fabrication of electronic devices such as field effect transistor and bilayer pseudospin field effect transistor devices.
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Affiliation(s)
- Xuesong Li
- Department of Mechanical Engineering and the Texas Materials Institute, The University of Texas at Austin, Texas 78712-0292, USA
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4189
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Levendorf MP, Ruiz-Vargas CS, Garg S, Park J. Transfer-free batch fabrication of single layer graphene transistors. NANO LETTERS 2009; 9:4479-83. [PMID: 19860406 DOI: 10.1021/nl902790r] [Citation(s) in RCA: 54] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Full integration of graphene into conventional device circuitry would require a reproducible large scale graphene synthesis that is compatible with conventional thin film technology. We report the synthesis of large scale single layer graphene directly onto an evaporated copper film. A novel fabrication method was used to directly pattern these graphene sheets into devices by simply removing the underlying copper film. Raman and conductance measurements show that the mechanical and electrical properties of our single layer graphene are uniform over a large area, ( Ferrari, A. C. et al. Phys. Rev. Lett. 2006, 97, 187401.) which leads to a high device yield and successful fabrication of ultra long (>0.5 mm) graphene channels. Our graphene based devices present excellent electrical properties including a promising carrier mobility of 700 cm(2)/V.s and current saturation characteristics similar to devices based on exfoliated graphene ( Meric, I.. et al. Nat Nanotechnol. 2008, 3, 654-659).
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Affiliation(s)
- Mark P Levendorf
- Department of Chemistry and Chemical Biology, School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
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4190
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Lu G, Ocola LE, Chen J. Reduced graphene oxide for room-temperature gas sensors. NANOTECHNOLOGY 2009; 20:445502. [PMID: 19809107 DOI: 10.1088/0957-4484/20/44/445502] [Citation(s) in RCA: 227] [Impact Index Per Article: 15.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
Abstract
We demonstrated high-performance gas sensors based on graphene oxide (GO) sheets partially reduced via low-temperature thermal treatments. Hydrophilic graphene oxide sheets uniformly suspended in water were first dispersed onto gold interdigitated electrodes. The partial reduction of the GO sheets was then achieved through low-temperature, multi-step annealing (100, 200, and 300 degrees C) or one-step heating (200 degrees C) of the device in argon flow at atmospheric pressure. The electrical conductance of GO was measured after each heating cycle to interpret the level of reduction. The thermally-reduced GO showed p-type semiconducting behavior in ambient conditions and was responsive to low-concentration NO2 and NH3 gases diluted in air at room temperature. The sensitivity can be attributed mainly to the electron transfer between the reduced GO and adsorbed gaseous molecules (NO2/NH3). Additionally, the contact between GO and the Au electrode is likely to contribute to the overall sensing response because of the adsorbates-induced Schottky barrier variation. A simplified model is used to explain the experimental observations.
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Affiliation(s)
- Ganhua Lu
- Department of Mechanical Engineering, University of Wisconsin-Milwaukee, Milwaukee, WI 53211, USA
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4191
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4192
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Depositing and doping. Nat Chem 2009. [DOI: 10.1038/nchem.272] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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4193
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Graphitization at interface between amorphous carbon and liquid gallium for fabricating large area graphene sheets. ACTA ACUST UNITED AC 2009. [DOI: 10.1116/1.3253542] [Citation(s) in RCA: 45] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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