Vertical ferroelectric switching by in-plane sliding of two-dimensional bilayer WTe2

Based on first-principles calculations, we studied the ferroelectric properties of bilayer 1T'-WTe₂. In this work, we discovered that the polarization stems from uncompensated out-of-plane interlayer charge transfer, which can be switched upon interlayer sliding of an in-plane translation. Our differential charge density results also confirmed that such ferroelectricity in the bilayer WTe₂ is derived from interlayer charge transfer. The ferroelectric polarization directions further control the spin texture of the bilayer WTe₂, which may have important applications in spintronics. Therefore, we propose a spin field effect transistor (spin-FET) design that may effectively improve the spin-polarized injection rate. In addition, the lattice strain has been found to have an important influence on the ferroelectric properties of the bilayer WTe₂. One can effectively increase the polarization with a maximum at 3% tensile strain, whereas a 3% compressive strain can transform the bilayer WTe₂ from the ferroelectric to paraelectric phase.

Ferroelectric switching in bilayer 3R MoS2 via interlayer shear mode driven by nonlinear phononics

We theoretically investigate the mechanism of ferroelectric switching via interlayer shear in 3R MoS₂ using first principles and lattice dynamics calculations. First principle calculations show the prominent anharmonic coupling of the infrared inactive interlayer shear and the infrared active phonons. The nonlinear coupling terms generates an effective anharmonic force which drives the interlayer shear mode and lowers the ferroelectric switching barrier depending on the amplitude and polarization of infrared mode. Lattice dynamics simulations show that the interlayer shear mode can be coherently excited to the switching threshold by a train of infrared pulses polarized along the zigzag axis of MoS₂. The results of this study indicate the possibility of ultrafast ferroelectricity in stacked two-dimensional materials from the control of stacking sequence.

Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS_{2}

Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low-power dissipation. Members of the 2D transition metal dichalcogenides have been recently predicted and experimentally reported as a new class of 2D TI materials, but in most cases edge conduction seems fragile and limited to the monolayer phase fabricated on specified substrates. Here, we realize the controlled patterning of the 1T^{'} phase embedded into the 2H phase of thin semiconducting molybdenum-disulfide by laser beam irradiation. Integer fractions of the quantum of resistance, the dependence on laser-irradiation conditions, magnetic field, and temperature, as well as the bulk gap observation by scanning tunneling spectroscopy and theoretical calculations indicate the presence of the quantum spin Hall phase in our patterned 1T^{'} phases.

Topological phase transition induced by magnetic proximity effect in two dimensions

We study the magnetic proximity effect on a two-dimensional topological insulator in a CrI₃/SnI₃/CrI₃ trilayer structure. From first-principles calculations, the BiI₃-type SnI₃ monolayer without spin-orbit coupling has Dirac cones at the corners of the hexagonal Brillouin zone. With spin-orbit coupling turned on, it becomes a topological insulator, as revealed by a non-vanishing Z ₂ invariant and an effective model from symmetry considerations. Without spin-orbit coupling, the Dirac points are protected if the CrI₃ layers are stacked ferromagnetically, and are gapped if the CrI₃ layers are stacked antiferromagnetically, which can be explained by the irreducible representations of the magnetic space groups [Formula: see text] and [Formula: see text], corresponding to ferromagnetic and antiferromagnetic stacking, respectively. By analyzing the effective model including the perturbations, we find that the competition between the magnetic proximity effect and spin-orbit coupling leads to a topological phase transition between a trivial insulator and a topological insulator.

Linear Dichroism and Nondestructive Crystalline Identification of Anisotropic Semimetal Few-Layer MoTe2

Semimetal 1T' MoTe₂ crystals have attracted tremendous attention owing to their anisotropic optical properties, Weyl semimetal, phase transition, and so on. However, the complex refractive indices (n-ik) of the anisotropic semimetal 1T' MoTe₂ still are not revealed yet, which is important to applications such as polarized wide spectrum detectors, polarized surface plasmonics, and nonlinear optics. Here, the linear dichroism of as-grown trilayer 1T' MoTe₂ single crystals is investigated. Trilayer 1T' MoTe₂ shows obvious anisotropic optical absorption due to the intraband transition of d_z ² orbits for Mo atoms and p_x orbits for Te atoms. The anisotropic complex refractive indices of few-layer 1T' MoTe₂ are experimentally obtained for the first time by using the Pinier equation analysis. Based on the linear dichroism of 1T' MoTe₂ , angle-resolved polarized optical microscopy is developed to visualize the grain boundary and identify the crystal orientation of 1T' MoTe₂ crystals, which is also an excellent tool toward the investigation of the optical absorption properties in the visible range for anisotropic 2D transition metal chalcogenides. This work provides a universal and nondestructive method to identify the crystal orientation of anisotropic 2D materials, which opens up an opportunity to investigate the optical application of anisotropic semimetal 2D materials.

Waterproof molecular monolayers stabilize 2D materials

Two-dimensional van der Waals materials have rich and unique functional properties, but many are susceptible to corrosion under ambient conditions. Here we show that linear alkylamines n-C _m H_2m+1NH₂, with m = 4 through 11, are highly effective in protecting the optoelectronic properties of these materials, such as black phosphorus (BP) and transition-metal dichalcogenides (TMDs: WS₂, 1T'-MoTe₂, WTe₂, WSe₂, TaS₂, and NbSe₂). As a representative example, n-hexylamine (m = 6) can be applied in the form of thin molecular monolayers on BP flakes with less than 2-nm thickness and can prolong BP's lifetime from a few hours to several weeks and even months in ambient environments. Characterizations combined with our theoretical analysis show that the thin monolayers selectively sift out water molecules, forming a drying layer to achieve the passivation of the protected 2D materials. The monolayer coating is also stable in air, H₂ annealing, and organic solvents, but can be removed by certain organic acids.

Sign Change in the Anomalous Hall Effect and Strong Transport Effects in a 2D Massive Dirac Metal Due to Spin-Charge Correlated Disorder

The anomalous Hall effect (AHE) is highly sensitive to disorder in the metallic phase. Here we show that statistical correlations between the charge-spin disorder sectors strongly affect the conductivity and the sign or magnitude of AHE. As the correlation between the charge and gauge-mass components increases, so does the AHE, achieving its universal value, and even exceeding it, although the system is an impure metal. The AHE can change sign when the anticorrelations reverse the sign of the effective Dirac mass, a possible mechanism behind the sign change seen in recent experiments.

Tetrahedral chain ordering and low dimensional magnetic lattice in a new brownmillerite Sr2ScFeO5

We report the synthesis, structure and physical properties of a hitherto unreported brownmillerite compound Sr2ScFeO5. We have shown a new ordering sequence of the interlayer iron tetrahedral chains. Reduced dimensionality of the magnetic lattice and the frustration in the two dimensional iron tetrahedral chains originate complex magnetic and magneto-dielectric effects. Our study highlights a novel approach to tailor the magnetic lattice in bulk oxides.

Dimensional Crossover and Topological Phase Transition in Dirac Semimetal Na3Bi Films

Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator phase. However, the 3D-to-2D crossover and the associated topological phase transition, which is valuable for understanding the topological quantum phases, remain unexplored. Here, we synthesize high-quality Na₃Bi thin films with √3 × √3 reconstruction on graphene and systematically characterize their thickness-dependent electronic and topological properties by scanning tunneling microscopy/spectroscopy in combination with first-principles calculations. We demonstrate that Dirac gaps emerge in Na₃Bi films, providing spectroscopic evidence of dimensional crossover from a 3D semimetal to a 2D topological insulator. Importantly, the Dirac gaps are revealed to be of sizable magnitudes on three and four monolayers (72 and 65 meV, respectively) with topologically nontrivial edge states. Moreover, the Fermi energy of a Na₃Bi film can be tuned via a certain growth process, thus offering a viable way for achieving charge neutrality in transport. The feasibility of controlling Dirac gap opening and charge neutrality enables realizing intrinsic high-temperature QSH effect in Na₃Bi films and achieving potential applications in topological devices.

Observation of Topological Edge States at the Step Edges on the Surface of Type-II Weyl Semimetal TaIrTe4

Topological materials harbor topologically protected boundary states. Recently, TaIrTe₄, a ternary transition-metal dichalcogenide, was identified as a type-II Weyl semimetal with the minimal nonzero number of Weyl points allowed for a time-reversal invariant Weyl semimetal. Monolayer TaIrTe₄ was proposed to host topological edge states, which, however, lacks of experimental evidence. Here, we report on the topological edge states localized at the monolayer step edges of the type-II Weyl semimetal TaIrTe₄ using scanning tunneling microscopy. One-dimensional electronic states that show substantial robustness against the edge irregularity are observed at the step edges. Theoretical calculations substantiate the topologically nontrivial nature of the edge states and their robustness against the edge termination and layer stacking. The observation of topological edge states at the step edges of TaIrTe₄ surfaces suggests that monolayer TaIrTe₄ is a two-dimensional topological insulator, providing TaIrTe₄ as a promising material for topological physics and devices.

Strain induced electronic and magnetic properties of 2D magnet CrI3: a DFT approach

In the post-graphene era, out of several monolayer 2D materials, Chromium triiodide ([Formula: see text]) has triggered an exotic platform for studying the intrinsic ferromagnetism and large anisotropy at the nanoscale regime. Apart from that, its strong spin-orbit coupling of I also plays a key role in tailoring the electronic properties. In this work, the composition of compressive and tensile strain (uniaxial as well as biaxial) upto 12% have been applied to study the variation of the electronic and magnetic properties of [Formula: see text] employing density functional theory in (LDA+U) exchange correlation scheme. The stability limits of the structures under the influence of strains have been carried out via the deformation potential (DP) and stress-strain relation. For compressive strains in specific directions, the down-spin band gap is seen to be decreasing steadily. The magnetic moment computed from the density of states (DOS) is enhanced significantly under the influence of compressive strain. However, it has been observed that after the application of strain in some specific crystal directions, the magnetic moment of monolayer [Formula: see text] remains almost unchanged. Thus, with the help of strain, the tunning band gap along with underlying characteristic ferromagnetism of this material can unfold a new avenue for potential usage in spintronic devices.

Structural, chemical, and electrical parameters of Au/MoS2/n-GaAs metal/2D/3D hybrid heterojunction

In this study, Au/MoS₂/n-GaAs heterojunction is fabricated with single MoS₂ layer and its structural, chemical and electrical parameters are investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and measurement of current-voltage (I-V) characteristics at room temperature. XRD and XPS analysis results confirm the formation of MoS₂ layer on the n-GaAs surface. The electrical properties of the Au/MoS₂/n-GaAs heterojunction are compared with those of the Au/n-GaAs Schottky junction. Interestingly, the heterojunction possesses a higher barrier height, lower leakage current and higher rectification ratio, in comparison with the Schottky junction. The shunt resistance (R_Sh) and series resistance (R_S) are also assessed for both the junctions. Moreover, the ideality factor (n), barrier height (Φ_b) and series resistance (R_S) are evaluated using Norde, Cheung's and surface potential (Ψ_S-V) plots and the results are well-matched. Furthermore, the current transport mechanism is analyzed based on the forward bias I-V data. Lastly, the Poole-Frenkel emission conduction mechanism is employed to control the reverse bias I-V behavior of both Au/n-GaAs Schottky junction and Au/MoS₂/n-GaAs heterojunction. The results demonstrate that the Au/MoS₂/n-GaAs heterojunction fabricated using a simple technique is suitable for high-quality electronic and optoelectronic device applications.

Optical Control of Non-Equilibrium Phonon Dynamics

The light-induced selective population of short-lived far-from-equilibrium vibration modes is a promising approach for controlling ultrafast and irreversible structural changes in functional nanomaterials. However, this requires a detailed understanding of the dynamics and evolution of these phonon modes and their coupling to the excited-state electronic structure. Here, we combine femtosecond mega-electronvolt electron diffraction experiments on a prototypical layered material, MoTe₂, with non-adiabatic quantum molecular dynamics simulations and ab initio electronic structure calculations to show how non-radiative energy relaxation pathways for excited electrons can be tuned by controlling the optical excitation energy. We show how the dominant intravalley and intervalley scattering mechanisms for hot and band-edge electrons leads to markedly different transient phonon populations evident in electron diffraction patterns. This understanding of how tuning optical excitations affect phonon populations and atomic motion is critical for efficiently controlling light-induced structural transitions of optoelectronic devices.

Manipulating Topological Domain Boundaries in the Single-Layer Quantum Spin Hall Insulator 1T'-WSe2

We report the creation and manipulation of structural phase boundaries in the single-layer quantum spin Hall insulator 1T'-WSe₂ by means of scanning tunneling microscope tip pulses. We observe the formation of one-dimensional interfaces between topologically nontrivial 1T' domains having different rotational orientations, as well as induced interfaces between topologically nontrivial 1T' and topologically trivial 1H phases. Scanning tunneling spectroscopy measurements show that 1T'/1T' interface states are localized at domain boundaries, consistent with theoretically predicted unprotected interface modes that form dispersive bands in and around the energy gap of this quantum spin Hall insulator. We observe a qualitative difference in the experimental spectral line shape between topologically "unprotected" states at 1T'/1T' domain boundaries and protected states at 1T'/1H and 1T'/vacuum boundaries in single-layer WSe₂.

Topological phase transition induced by px,y and pz band inversion in a honeycomb lattice

The search for more types of band inversion-induced topological states is of great scientific and experimental interest. Here, we proposed that the band inversion between p_x,y and p_z orbitals can produce a topological phase transition in honeycomb lattices based on tight-binding model analyses. The corresponding topological phase diagram was mapped out in the parameter space of orbital energy and spin-orbit coupling. Specifically, the quantum anomalous Hall (QAH) effect could be achieved when ferromagnetism was introduced. Moreover, our first-principles calculations demonstrated that the two systems of half-iodinated silicene (Si₂I) and one-third monolayer of bismuth epitaxially grown on the Si(111)-√3 ×√3 surface are ideal candidates for realizing the QAH effect with Curie temperatures of ∼101 K and 118 K, respectively. The underlying physical mechanism of this scheme is generally applicable, offering broader opportunities for the exploration of novel topological states and high-temperature QAH effect systems.

Topological Protection Brought to Light by the Time-Reversal Symmetry Breaking

Recent topological band theory distinguishes electronic band insulators with respect to various symmetries and topological invariants, most commonly, the time reversal symmetry and the Z_{2} invariant. The interface of two topologically distinct insulators hosts a unique class of electronic states-the helical states, which shortcut the gapped bulk and exhibit spin-momentum locking. The magic and so far elusive property of the helical electrons, known as topological protection, prevents them from coherent backscattering as long as the underlying symmetry is preserved. Here we present an experiment that brings to light the strength of topological protection in one-dimensional helical edge states of a Z_{2} quantum spin-Hall insulator in HgTe. At low temperatures, we observe the dramatic impact of a tiny magnetic field, which results in an exponential increase of the resistance accompanied by giant mesoscopic fluctuations and a gap opening. This textbook Anderson localization scenario emerges only upon the time-reversal symmetry breaking, bringing the first direct evidence of the topological protection strength in helical edge states.

Two-dimensional layered materials: from mechanical and coupling properties towards applications in electronics

With the increasing interest in nanodevices based on two-dimensional layered materials (2DLMs) after the birth of graphene, the mechanical and coupling properties of these materials, which play an important role in determining the performance and life of nanodevices, have drawn increasingly more attention. In this review, both experimental and simulation methods investigating the mechanical properties and behaviour of 2DLMs have been summarized, which is followed by the discussion of their elastic properties and failure mechanisms. For further understanding and tuning of their mechanical properties and behaviour, the influence factors on the mechanical properties and behaviour have been taken into consideration. In addition, the coupling properties between mechanical properties and other physical properties are summarized to help set up the theoretical blocks for their novel applications. Thus, the understanding of the mechanical and coupling properties paves the way to their applications in flexible electronics and novel electronics, which is demonstrated in the last part. This review is expected to provide in-depth and comprehensive understanding of mechanical and coupling properties of 2DLMs as well as direct guidance for obtaining satisfactory nanodevices from the aspects of material selection, fabrication processes and device design.

Layer-by-layer thinning of MoS2 via laser irradiation

Layer-by-layer thinning of molybdenum disulfide (MoS₂) via laser irradiation was examined using Raman spectroscopy and atomic force microscopy. In particular, the effects of number of layers, laser conditions, and substrate were systematically identified. The results demonstrated the presence of nanoparticles on the MoS₂ at sufficient laser treatment conditions prior to layer-by-layer thinning. The volume of nanoparticles was found to increase and then decrease as the number of MoS₂ layers increased; the non-monotonic trend was ascribed to changes in the thermal conductivity of the film and interfacial thermal conductance between the film and substrate with number of layers. Moreover, the volume of nanoparticles was found to increase as the magnification of the objective lens decreased and as laser power and exposure time increased, which was attributed to changes in the power density with laser conditions. The effect of substrate on nanoparticle formation and layer-by-layer thinning was investigated through a comparison of freestanding and substrate-supported MoS₂ subjected to laser irradiation; it was illustrated that freestanding films were thinned at lower laser powers than substrate-supported films, which highlighted the function of the substrate as a heat sink. For conditions that elicited thinning, it was shown that the thinned areas exhibited triangular shapes, which suggested anisotropic etching behavior where the lattice of the basal plane was preferentially thinned along the zigzag direction terminated by an Mo- or S-edge. High-resolution transmission electron microscopy of freestanding MoS₂ revealed the presence of a 2 nm thick amorphous region around the laser-treated region, which suggested that the crystalline structure of laser-treated MoS₂ remained largely intact after the thinning process. In all, the conclusions from this work provide useful insight into the progression of laser thinning of MoS₂, thereby enabling more effective methods for the development of MoS₂ devices via laser irradiation.

Discovery of Superconductivity in 2M WS2 with Possible Topological Surface States

Recently the metastable 1T'-type VIB-group transition metal dichalcogenides (TMDs) have attracted extensive attention due to their rich and intriguing physical properties, including superconductivity, valleytronics physics, and topological physics. Here, a new layered WS₂ dubbed "2M" WS₂ , is constructed from 1T' WS₂ monolayers, is synthesized. Its phase is defined as 2M based on the number of layers in each unit cell and the subordinate crystallographic system. Intrinsic superconductivity is observed in 2M WS₂ with a transition temperature T_c of 8.8 K, which is the highest among TMDs not subject to any fine-tuning process. Furthermore, the electronic structure of 2M WS₂ is found by Shubnikov-de Haas oscillations and first-principles calculations to have a strong anisotropy. In addition, topological surface states with a single Dirac cone, protected by topological invariant Z₂ , are predicted through first-principles calculations. These findings reveal that the new 2M WS₂ might be an interesting topological superconductor candidate from the VIB-group transition metal dichalcogenides.

Photoinduced Vacancy Ordering and Phase Transition in MoTe2

We show that non-equilibrium dynamics plays a central role in the photoinduced 2H-to-1T' phase transition of MoTe₂. The phase transition is initiated by a local ordering of Te vacancies, followed by a 1T' structural change in the original 2H lattice. The local 1T' region serves as a seed to gather more vacancies into ordering and subsequently induces a further growth of the 1T' phase. Remarkably, this process is controlled by photogenerated excited carriers as they enhance vacancy diffusion, increase the speed of vacancy ordering, and are hence vital to the 1T' phase transition. This mechanism can be contrasted to the current model requiring a collective sliding of a whole Te atomic layer, which is thermodynamically highly unlikely. By uncovering the key roles of photoexcitations, our results may have important implications for finely controlling phase transitions in transition metal dichalcogenides.

Anomalous Electron Dynamics Induced through the Valley Magnetic Domain: A Pathway to Valleytronic Current Processing

An interplay between an applied strain and the Berry curvature reconstruction in the uniaxially strained monolayer MoS₂ is explored that leads to the unbalanced Berry curvatures centered at K and -K points and, eventually, the valley magnetization under an external electric field. This is shown to explain a recent experimental observation of the valley magnetoelectric effect and develop a novel concept of the valley magnetic domain (VMD), i.e., a real-space homogeneous distribution of the valley magnetization. A realization of VMD guarantees a sufficient number of stable valley-polarized carriers, one of the most essential prerequisites of the valleytronics. Furthermore, we discover the anomalous electron dynamics through the VMD activation and achieve a manipulation of the anomalous transverse current perpendicular to the electric field, directly accessible to the signal processing [for instance, the current modulation under the VMD (i.e., the VMD wall) moving and the terahertz current rectification under the VMD switching]. This suggests a concept of VMD for use in providing new physical insight into the valleytronic functionality and its manipulation as a key ingredient of potential device applications.

Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials

The interplay of magnetism and topology is a key research subject in condensed matter physics, which offers great opportunities to explore emerging new physics, such as the quantum anomalous Hall (QAH) effect, axion electrodynamics, and Majorana fermions. However, these exotic physical effects have rarely been realized experimentally because of the lack of suitable working materials. Here, we predict a series of van der Waals layered MnBi2Te4-related materials that show intralayer ferromagnetic and interlayer antiferromagnetic exchange interactions. We find extremely rich topological quantum states with outstanding characteristics in MnBi2Te4, including an antiferromagnetic topological insulator with the long-sought topological axion states on the surface, a type II magnetic Weyl semimetal with one pair of Weyl points, as well as a collection of intrinsic axion insulators and QAH insulators in even- and odd-layer films, respectively. These notable predictions, if proven experimentally, could profoundly change future research and technology of topological quantum physics.

Atomic-Scale Chemical Conversion of Single-Layer Transition Metal Dichalcogenides

Chemical conversion by atomic substitution offers a powerful route toward the creation of unusual structures and functionalities. Here, we demonstrate the progressive transformation of single-layer TiTe₂ into TiSe₂ by reaction with a Se flux in vacuum. Angle-resolved photoemission spectroscopy and scanning tunneling microscopy reveal intriguing reaction patterns involving TiSe₂ island ingrowth starting from the TiTe₂ island edges, while the band structure and core level signatures of TiSe₂ grow in intensity at the expense of those corresponding to TiTe₂. Lattice mismatch between TiTe₂ and TiSe₂ results in misfit holes and lattice distortions over a distance behind a seamless fingerlike reaction front. The regions of TiSe₂ and TiTe₂ are distinguished by a height difference and a charge density wave (CDW) at different transition temperatures. The method of in situ chemical conversion offers opportunities for atomic-scale engineering of layered transition metal dichalcogenides that host useful properties arising from CDW, Dirac, Weyl, superconducting, spin-valley, and magnetic structures.

Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors

van der Waals (vdW) p-n heterojunctions formed by two-dimensional nanomaterials exhibit many physical properties and deliver functionalities to enable future electronic and optoelectronic devices. In this report, we demonstrate a tunable and high-performance anti-ambipolar transistor based on MoTe₂/MoS₂ heterojunction through in situ photoinduced doping. The device demonstrates a high on/off ratio of 10⁵ with a large on-state current of several micro-amps. The peak position of the drain-source current in the transfer curve can be adjusted through the doping level across a large dynamic range. In addition, we have fabricated a tunable multivalue inverter based on the heterojunction that demonstrates precise control over its output logic states and window of midlogic through source-drain bias adjustment. The heterojunction also exhibits excellent photodetection and photovoltaic performances. Dynamic and precise modulation of the anti-ambipolar transport properties may inspire functional devices and applications of two-dimensional nanomaterials and their heterostructures of various kinds.

Topological Axion States in the Magnetic Insulator MnBi_{2}Te_{4} with the Quantized Magnetoelectric Effect

Topological states of quantum matter have attracted great attention in condensed matter physics and materials science. The study of time-reversal-invariant topological states in quantum materials has made tremendous progress. However, the study of magnetic topological states falls much behind due to the complex magnetic structures. Here, we predict the tetradymite-type compound MnBi_{2}Te_{4} and its related materials host topologically nontrivial magnetic states. The magnetic ground state of MnBi_{2}Te_{4} is an antiferromagetic topological insulator state with a large topologically nontrivial energy gap (∼0.2  eV). It presents the axion state, which has gapped bulk and surface states, and the quantized topological magnetoelectric effect. The ferromagnetic phase of MnBi_{2}Te_{4} might lead to a minimal ideal Weyl semimetal.

Tuning spin-orbit coupling in 2D materials for spintronics: a topical review

Atomically-thin 2D materials have opened up new opportunities in the past decade in realizing novel electronic device concepts, owing to their unusual electronic properties. The recent progress made in the aspect of utilizing additional degrees of freedom of the electrons such as spin and valley suggests that 2D materials have a significant potential in replacing current electronic-charge-based semiconductor technology with spintronics and valleytronics. For spintronics, spin-orbit coupling plays a key role in manipulating the electrons' spin degree of freedom to encode and process information, and there are a host of recent studies exploring this facet of 2D materials. We review the recent advances in tuning spin-orbit coupling of 2D materials which are of notable importance to the progression of spintronics.

Transport evidence of asymmetric spin-orbit coupling in few-layer superconducting 1Td-MoTe2

Two-dimensional transition metal dichalcogenides MX₂ (M = W, Mo, Nb, and X = Te, Se, S) with strong spin-orbit coupling possess plenty of novel physics including superconductivity. Due to the Ising spin-orbit coupling, monolayer NbSe₂ and gated MoS₂ of 2H structure can realize the Ising superconductivity, which manifests itself with in-plane upper critical field far exceeding Pauli paramagnetic limit. Surprisingly, we find that a few-layer 1T_d structure MoTe₂ also exhibits an in-plane upper critical field which goes beyond the Pauli paramagnetic limit. Importantly, the in-plane upper critical field shows an emergent two-fold symmetry which is different from the isotropic in-plane upper critical field in 2H transition metal dichalcogenides. We show that this is a result of an asymmetric spin-orbit coupling in 1T_d transition metal dichalcogenides. Our work provides transport evidence of a new type of asymmetric spin-orbit coupling in transition metal dichalcogenides which may give rise to novel superconducting and spin transport properties.

Electronic Structure Mosaicity of Monolayer Transition Metal Dichalcogenides by Spontaneous Pattern Formation of Donor Molecules

Modulating the electronic structure of semiconducting materials is critical to developing high-performance electronic and optical devices. Transition metal dichalcogenides (TMDCs) are atomically thin semiconducting materials. However, before they can be used successfully in electronic and optical devices, modulation of their carrier concentration at the nanometer scale must be achieved. Molecular doping has been successful in modulating the carrier concentration; however, the scientific approach for selective and local carrier doping at the nanometer scale is still missing. Here, we demonstrate a proof-of-concept of modulating the carrier concentration of TMDCs laterally on a scale of around 100 nm using spontaneous pattern formation of an ultrathin film consisting of molecular electron dopants. When the water made contact with the molecular film (∼10 nm), a spontaneous pattern formation was observed on both the monolayer and bulk TMDCs. We revealed that the pattern-formation dynamics and nanoscopic flow rate of the molecules were highly dependent on the thickness of the TMDCs, since the band gap varies based on the number of layers. Analyses of topographic images of the molecular patterns and photoluminescence spectra of the TMDCs indicated that the spontaneously patterned molecular films induced a local carrier doping. Our results demonstrate a spontaneous formation of a mosaic electronic structure. This work is useful for making tiny-scale electronic junctions on TMDCs and semiconducting materials to make numerous p/n junctions simultaneously for optoelectronic devices.

High Phase Purity of Large-Sized 1T'-MoS2 Monolayers with 2D Superconductivity

The development of transition metal dichalcogenides has greatly accelerated research in the 2D realm, especially for layered MoS₂ . Crucially, the metallic MoS₂ monolayer is an ideal platform in which novel topological electronic states can emerge and also exhibits excellent energy conversion and storage properties. However, as its intrinsic metallic phase, little is known about the nature of 2D 1T'-MoS₂ , probably because of limited phase uniformity (<80%) and lateral size (usually <1 µm) in produced materials. Herein, solution processing to realize high phase-purity 1T'-MoS₂ monolayers with large lateral size is demonstrated. Direct chemical exfoliation of millimeter-sized 1T' crystal is introduced to successfully produce a high-yield of 1T'-MoS₂ monolayers with over 97% phase purity and unprecedentedly large size up to tens of micrometers. Furthermore, the large-sized and high-quality 1T'-MoS₂ nanosheets exhibit clear intrinsic superconductivity among all thicknesses down to monolayer, accompanied by a slow drop of transition temperature from 6.1 to 3.0 K. Prominently, unconventional superconducting behavior with upper critical field far beyond the Pauli limit is observed in the centrosymmetric 1T'-MoS₂ structure. The results open up an ideal approach to explore the properties of 2D metastable polymorphic materials.

In-Plane Anisotropic Properties of 1T'-MoS2 Layers

Crystal phases play a key role in determining the physicochemical properties of a material. To date, many phases of transition metal dichalcogenides have been discovered, such as octahedral (1T), distorted octahedral (1T'), and trigonal prismatic (2H) phases. Among these, the 1T' phase offers unique properties and advantages in various applications. Moreover, the 1T' phase consists of unique zigzag chains of the transition metals, giving rise to interesting in-plane anisotropic properties. Herein, the in-plane optical and electrical anisotropies of metastable 1T'-MoS₂ layers are investigated by the angle-resolved Raman spectroscopy and electrical measurements, respectively. The deconvolution of J₁ and J₂ peaks in the angle-resolved Raman spectra is a key characteristic of high-quality 1T'-MoS₂ crystal. Moreover, it is found that its electrocatalytic performance may be affected by the crystal orientation of anisotropic material due to the anisotropic charge transport.

Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te)₂ atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed. Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macroscale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field.

Anomalous Photothermoelectric Transport Due to Anisotropic Energy Dispersion in WTe2

Band structures are vital in determining the electronic properties of materials. Recently, the two-dimensional (2D) semimetallic transition metal tellurides (WTe₂ and MoTe₂) have sparked broad research interest because of their elliptical or open Fermi surface, making distinct from the conventional 2D materials. In this study, we demonstrate a centrosymmetric photothermoelectric voltage distribution in WTe₂ nanoflakes, which has not been observed in common 2D materials such as graphene and MoS₂. Our theoretical model shows the anomalous photothermoelectric effect arises from an anisotropic energy dispersion and micrometer-scale hot carrier diffusion length of WTe₂. Further, our results are more consistent with the anisotropic tilt direction of energy dispersion being aligned to the b-axis rather than the a-axis of the WTe₂ crystal, which is consistent with the previous first-principle calculations as well as magneto-transport experiments. Our work shows the photothermoelectric current is strongly confined to the anisotropic direction of the energy dispersion in WTe₂, which opens an avenue for interesting electro-optic applications such as electron beam collimation and electron lenses.

An electrically driven structural phase transition in single Ag2Te nanowire devices

Exploring new phase-change materials is instrumental in the progression of electronic memory devices. Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the temperature- or electrically-driven phase change properties of crystalline Ag2Te nanowires. We first demonstrate that this structural phase change can be achieved via heating up the nanowires, which results in a sharp drop in conductance. Then we show that a DC voltage (<1 V) induced Joule heating can be used to reach the phase transition, even without any external heating. This work shows the potential of using Ag2Te nanowires as a phase-change material in low voltage and low power nanoscale devices.

Unraveling High-Yield Phase-Transition Dynamics in Transition Metal Dichalcogenides on Metallic Substrates

2D transition metal dichalcogenides (2D-TMDs) and their unique polymorphic features such as the semiconducting 1H and quasi-metallic 1T' phases exhibit intriguing optical and electronic properties, which can be used in novel electronic and photonic device applications. With the favorable quasi-metallic nature of 1T'-phase 2D-TMDs, the 1H-to-1T' phase engineering processes are an immensely vital discipline exploited for novel device applications. Here, a high-yield 1H-to-1T' phase transition of monolayer-MoS2 on Cu and monolayer-WSe2 on Au via an annealing-based process is reported. A comprehensive experimental and first-principles study is performed to unravel the underlying mechanism and derive the general trends for the high-yield phase transition process of 2D-TMDs on metallic substrates. While each 2D-TMD possesses different intrinsic 1H-1T' energy barriers, the option of metallic substrates with higher chemical reactivity plays a significantly pivotal role in enhancing the 1H-1T' phase transition yield. The yield increase is achieved via the enhancement of the interfacial hybridizations by the means of increased interfacial binding energy, larger charge transfer, shorter interfacial spacing, and weaker bond strength. Fundamentally, this study opens up the field of 2D-TMD/metal-like systems to further scientific investigation and research, thereby creating new possibilities for 2D-TMDs-based device applications.

Room-Temperature Mesoscopic Fluctuations and Coulomb Drag in Multilayer WSe2

Mesoscopic fluctuations, manifesting the quantum interference (QI) of electrons, have been theoretically proposed in bilayer Coulomb drag systems. Unfortunately, these phenomena are usually observed at cryogenic temperatures, which severely limits their novel physics for pragmatic applications. In this paper, observation of room-temperature QI and Coulomb drag in a multilayer WSe₂ transistor is reported via graphene contacts separately at its top and bottom layers. The central layers of WSe₂ act as an insulating region with a width of few nanometers, which spatially separates the top and bottom conducting channels and provides a strong Coulomb interaction between them, leading to large conductance oscillations at room temperature. The gradual suppression of the oscillations with the increase in the applied magnetic field and/or injected current further confirms the QI phenomenon. With the decrease in temperature, the Coulomb drag effect is exhibited in the system owing to the increased thickness of the insulating region. This study reveals a novel approach for realization of advanced quantum electronics operating at high temperatures.

Nonlinear anomalous Hall effect in few-layer WTe2

The Hall effect occurs only in systems with broken time-reversal symmetry, such as materials under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE)¹. Here we show a nonlinear AHE in a non-magnetic material under zero magnetic field, in which the Hall voltage depends quadratically on the longitudinal current^2-6. We observe the effect in few-layer T_d-WTe₂, a two-dimensional semimetal with broken inversion symmetry and only one mirror line in the crystal plane. Our angle-resolved electrical measurements reveal that the Hall voltage maximizes (vanishes) when the bias current is perpendicular (parallel) to the mirror line. The observed effect can be understood as an AHE induced by the bias current, which generates an out-of-plane magnetization. The temperature dependence of the Hall conductivity further suggests that both the intrinsic Berry curvature dipole and extrinsic spin-dependent scatterings contribute to the observed nonlinear AHE.

Nonlinear magnetotransport shaped by Fermi surface topology and convexity

The nature of Fermi surface defines the physical properties of conductors and many physical phenomena can be traced to its shape. Although the recent discovery of a current-dependent nonlinear magnetoresistance in spin-polarized non-magnetic materials has attracted considerable attention in spintronics, correlations between this phenomenon and the underlying fermiology remain unexplored. Here, we report the observation of nonlinear magnetoresistance at room temperature in a semimetal WTe₂, with an interesting temperature-driven inversion. Theoretical calculations reproduce the nonlinear transport measurements and allow us to attribute the inversion to temperature-induced changes in Fermi surface convexity. We also report a large anisotropy of nonlinear magnetoresistance in WTe₂, due to its low symmetry of Fermi surfaces. The good agreement between experiments and theoretical modeling reveals the critical role of Fermi surface topology and convexity on the nonlinear magneto-response. These results lay a new path to explore ramifications of distinct fermiology for nonlinear transport in condensed-matter.

Catalogue of topological electronic materials

Topological electronic materials such as bismuth selenide, tantalum arsenide and sodium bismuthide show unconventional linear response in the bulk, as well as anomalous gapless states at their boundaries. They are of both fundamental and applied interest, with the potential for use in high-performance electronics and quantum computing. But their detection has so far been hindered by the difficulty of calculating topological invariant properties (or topological nodes), which requires both experience with materials and expertise with advanced theoretical tools. Here we introduce an effective, efficient and fully automated algorithm that diagnoses the nontrivial band topology in a large fraction of nonmagnetic materials. Our algorithm is based on recently developed exhaustive mappings between the symmetry representations of occupied bands and topological invariants. We sweep through a total of 39,519 materials available in a crystal database, and find that as many as 8,056 of them are topologically nontrivial. All results are available and searchable in a database with an interactive user interface.

Interface Engineering of Au(111) for the Growth of 1T'-MoSe2

Phase-controlled synthesis of two-dimensional transition-metal dichalcogenides (TMDCs) is of great interest due to the distinct properties of the different phases. However, it is challenging to prepare metallic phase of group-VI TMDCs due to their metastability. At the monolayer level, interface engineering can be used to stabilize the metastable phase. Here, we demonstrate the selective growth of either single-layer 1H- or 1T'-MoSe₂ on Au(111) by molecular-beam epitaxy; the two phases can be unambiguously distinguished using scanning tunnelling microscopy and spectroscopy. While the growth of 1H-MoSe₂ is favorable on pristine Au(111), the growth of 1T'-MoSe₂ is promoted by the predeposition of Se on Au(111). The selective growth of the 1T'-MoSe₂ on Se-pretreated Au(111) is attributed to the Mo intercalation induced stabilization of the 1T' phase, which is supported by density functional theory calculations. In addition, 1T' twin boundaries and 1H-1T' heterojunctions were observed and found to exhibit enhanced tunnelling conductivity. The substrate pretreatment approach for phase-controlled epitaxy could be applicable to other group-VI TMDCs grown on Au (111).

Growth and Thermo-driven Crystalline Phase Transition of Metastable Monolayer 1T'-WSe2 Thin Film

Two-dimensional (2D) transition metal dichalcogenides MX₂ (M = Mo, W, X = S, Se, Te) attracts enormous research interests in recent years. Its 2H phase possesses an indirect to direct bandgap transition in 2D limit, and thus shows great application potentials in optoelectronic devices. The 1T′ crystalline phase transition can drive the monolayer MX₂ to be a 2D topological insulator. Here we realized the molecular beam epitaxial (MBE) growth of both the 1T′ and 2H phase monolayer WSe₂ on bilayer graphene (BLG) substrate. The crystalline structures of these two phases were characterized using scanning tunneling microscopy. The monolayer 1T′-WSe₂ was found to be metastable, and can transform into 2H phase under post-annealing procedure. The phase transition temperature of 1T′-WSe₂ grown on BLG is lower than that of 1T′ phase grown on 2H-WSe₂ layers. This thermo-driven crystalline phase transition makes the monolayer WSe₂ to be an ideal platform for the controlling of topological phase transitions in 2D materials family.

Nonlayered tellurene as an elemental 2D topological insulator: experimental evidence from scanning tunneling spectroscopy

We report the formation of a nonlayered tellurene monolayer in its alpha-phase through an anisotropic ultrasonication method. The nonlayered tellurene has so far been predicted to exhibit a topologically insulating state of matter in two-dimensional (2D) form with an insulating interior and metallic edge states propagating along the perimeter of the 2D objects. In this work, we report direct evidence of elemental topological insulator behavior in the material through a localized mode of measurement, that is, scanning tunneling spectroscopic studies. We moreover deliberate on the length scale the time-reversal symmetry-protected edge states extend towards the interior. The metallic edge, which has been found to span over a 3 nm region, opens and widens monotonically into gapped states. The appearance of the elemental 2D topological insulator phase has been explained in terms of built-in strains in the systems as viewed through a shift in the Raman modes.

Deep elastic strain engineering of bandgap through machine learning

Deforming a material to a large extent without inelastic relaxation can result in unprecedented properties. However, the optimal deformation state is buried within the vast continua of choices available in the strain space. Here we advance a unique and powerful strategy to circumvent conventional trial-and-error methods, and adopt artificial intelligence techniques for rationally designing the most energy-efficient pathway to achieve a desirable material property such as the electronic bandgap. The broad framework for tailoring any target figure of merit, for any material using machine learning, opens up opportunities to adapt elastic strain engineering of properties and performance in devices and systems in a controllable and efficient manner, for potential applications in microelectronics, optoelectronics, photonics, and energy technologies.

Nanoscale specimens of semiconductor materials as diverse as silicon and diamond are now known to be deformable to large elastic strains without inelastic relaxation. These discoveries harbinger a new age of deep elastic strain engineering of the band structure and device performance of electronic materials. Many possibilities remain to be investigated as to what pure silicon can do as the most versatile electronic material and what an ultrawide bandgap material such as diamond, with many appealing functional figures of merit, can offer after overcoming its present commercial immaturity. Deep elastic strain engineering explores full six-dimensional space of admissible nonlinear elastic strain and its effects on physical properties. Here we present a general method that combines machine learning and ab initio calculations to guide strain engineering whereby material properties and performance could be designed. This method invokes recent advances in the field of artificial intelligence by utilizing a limited amount of ab initio data for the training of a surrogate model, predicting electronic bandgap within an accuracy of 8 meV. Our model is capable of discovering the indirect-to-direct bandgap transition and semiconductor-to-metal transition in silicon by scanning the entire strain space. It is also able to identify the most energy-efficient strain pathways that would transform diamond from an ultrawide-bandgap material to a smaller-bandgap semiconductor. A broad framework is presented to tailor any target figure of merit by recourse to deep elastic strain engineering and machine learning for a variety of applications in microelectronics, optoelectronics, photonics, and energy technologies.

Direct solution-phase synthesis of 1T' WSe2 nanosheets

Crystal phase control in layered transition metal dichalcogenides is central for exploiting their different electronic properties. Access to metastable crystal phases is limited as their direct synthesis is challenging, restricting the spectrum of reachable materials. Here, we demonstrate the solution phase synthesis of the metastable distorted octahedrally coordinated structure (1T’ phase) of WSe₂ nanosheets. We design a kinetically-controlled regime of colloidal synthesis to enable the formation of the metastable phase. 1T’ WSe₂ branched few-layered nanosheets are produced in high yield and in a reproducible and controlled manner. The 1T’ phase is fully convertible into the semiconducting 2H phase upon thermal annealing at 400 °C. The 1T’ WSe₂ nanosheets demonstrate a metallic nature exhibited by an enhanced electrocatalytic activity for hydrogen evolution reaction as compared to the 2H WSe₂ nanosheets and comparable to other 1T’ phases. This synthesis design can potentially be extended to different materials providing direct access of metastable phases.

1T’ phases of transition metal dichalcogenides show promise for electrocatalysis, energy storage, and spintronic applications but are difficult to obtain. Here the authors synthesize 1T’ WSe2 few-layered nanosheets by kinetically-controlled colloidal synthesis, and test their electrocatalytic activity.

Electrically Robust Single-Crystalline WTe2 Nanobelts for Nanoscale Electrical Interconnects

As the elements of integrated circuits are downsized to the nanoscale, the current Cu-based interconnects are facing limitations due to increased resistivity and decreased current-carrying capacity because of scaling. Here, the bottom-up synthesis of single-crystalline WTe2 nanobelts and low- and high-field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top-down approach, the bottom-up growth mode of WTe2 nanobelts allows systemic characterization of the electrical properties of WTe2 single crystals as a function of channel dimensions. Using a 1D heat transport model and a power law, it is determined that the breakdown of WTe2 devices under vacuum and with AlO x capping layer follows an ideal pattern for Joule heating, far from edge scattering. High-field electrical measurements and self-heating modeling demonstrate that the WTe2 nanobelts have a breakdown current density approaching ≈100 MA cm-2, remarkably higher than those of conventional metals and other transition-metal chalcogenides, and sustain the highest electrical power per channel length (≈16.4 W cm-1) among the interconnect candidates. The results suggest superior robustness of WTe2 against high-bias sweep and its possible applicability in future nanoelectronics.

Van der Waals Heteroepitaxial Growth of Monolayer Sb in a Puckered Honeycomb Structure

Atomically thin 2D crystals have gained tremendous attention owing to their potential impact on future electronics technologies, as well as the exotic phenomena emerging in these materials. Monolayers of α-phase Sb (α-antimonene), which shares the same puckered structure as black phosphorous, are predicted to be stable with precious properties. However, the experimental realization still remains challenging. Here, high-quality monolayerα-antimonene is successfully grown, with the thickness finely controlled. The α-antimonene exhibits great stability upon exposure to air. Combining scanning tunneling microscopy, density functional theory calculations, and transport measurements, it is found that the electron band crossing the Fermi level exhibits a linear dispersion with a fairly small effective mass, and thus a good electrical conductivity. All of these properties make the α-antimonene promising for future electronic applications.

Imaging quantum spin Hall edges in monolayer WTe2

A two-dimensional (2D) topological insulator exhibits the quantum spin Hall (QSH) effect, in which topologically protected conducting channels exist at the sample edges. Experimental signatures of the QSH effect have recently been reported in an atomically thin material, monolayer WTe₂. Here, we directly image the local conductivity of monolayer WTe₂ using microwave impedance microscopy, establishing beyond doubt that conduction is indeed strongly localized to the physical edges at temperatures up to 77 K and above. The edge conductivity shows no gap as a function of gate voltage, and is suppressed by magnetic field as expected. We observe additional conducting features which can be explained by edge states following boundaries between topologically trivial and nontrivial regions. These observations will be critical for interpreting and improving the properties of devices incorporating WTe₂. Meanwhile, they reveal the robustness of the QSH channels and the potential to engineer them in the monolayer material platform.

Spin-Polarization Control Driven by a Rashba-Type Effect Breaking the Mirror Symmetry in Two-Dimensional Dual Topological Insulators

Three-dimensional topological insulators protected by both the time reversal (TR) and mirror symmetries were recently predicted and observed. Two-dimensional materials featuring this property and their potential for device applications have been less explored. We find that, in these systems, the spin polarization of edge states can be controlled with an external electric field breaking the mirror symmetry. This symmetry requires that the spin polarization is perpendicular to the mirror plane; therefore, the electric field induces spin-polarization components parallel to the mirror plane. Since this field preserves the TR topological protection, we propose a transistor model using the spin direction of protected edge states as a switch. In order to illustrate the generality of the proposed phenomena, we consider compounds protected by mirror planes parallel and perpendicular to the structure, e.g., Na_{3}Bi and half-functionalized (HF) hexagonal compounds, respectively. For this purpose, we first construct a tight-binding effective model for the Na_{3}Bi compound and predict that HF-honeycomb lattice materials are also dual topological insulators.

Soft hydrogen plasma induced phase transition in monolayer and few-layer MoTe2

Phase transition from the semiconducting hexagonal (2H) phase to the metallic monoclinic (1T') phase in two-dimensional (2D) transition metal dichalcogenides like MoTe₂ is not only of great importance in fundamental study but also of technological significance for broad device applications. Here we report a universal, facile, scalable and reversible phase engineering technique (between 2H and 1T' phases) for both monolayer and few-layer MoTe₂ based on a soft hydrogen plasma treatment. The 2H → 1T' transition was confirmed by a series of characterizations including Raman spectra and mapping studies, XPS analysis and FET device measurements at varying temperatures. We attribute the phase transition to the warping of Te-Mo bonds and the lateral sliding of the top Te-layer induced by the soft hydrogen ion bombardment according to both the structural and electronic characterizations as well as the horizontal comparison with the cases of Ar or O₂ plasma treatment. We have also prepared a 2D heterostructure containing periodical 2H and 1T' MoTe₂ and showed that such phase transition can be readily reversed by post annealing. These results thus provide a robust and efficient approach for the phase engineering of monolayer and few-layer MoTe₂ and could aid the development of 2D optoelectronic, memory and reconfigurable devices.