Electronic structure and layer-dependent magnetic order of a new high-mobility layered antiferromagnet KMnBi

Room-temperature two-dimensional antiferromagnetic (AFM) materials are highly desirable for various device applications. In this letter, we report the low-energy electronic structure of KMnBi measured by angle-resolved photoemission spectroscopy, which confirms an AFM ground state with the valence band maximum located at -100 meV below the Fermi level and small hole effective masses associated with the sharp band dispersion. Using complementary Raman, atomic force microscope and electric transport measurement, we systematically study the evolution of electric transport characteristics of micro-mechanically exfoliated KMnBi with varied flake thicknesses, which all consistently reveal the existence of a probable AFM ground state down to the quintuple-layer regime. The AFM phase transition temperature ranges from 220 K to 275 K, depending on the thickness. Our results suggest that with proper device encapsulation, multilayer KMnBi is indeed a promising 2D AFM platform for testing various theoretical proposals for device applications.

Identifying the Correlation between Structural Parameters and Anisotropic Magnetic Properties in IMnV Semiconductors: A Possible Room-Temperature Magnetism

Layer-structured materials are of central importance in a wide range of research fields owing to their unique properties originating from their two dimensionality and anisotropy. Herein, quasi-2D layer-structured IMnV (I: alkali metals and V: pnictogen elements) compounds are investigated, which are potential antiferromagnetic (AFM) semiconductors. Single crystals of IMnV compounds are successfully grown using the self-flux method and their electronic and magnetic properties are analyzed in correlation with structural parameters. Combined with theoretical calculations, the structural analysis indicates that the variation in the bonding angle between VMnV is responsible for the change in the orbital hybridization of Mn and V, predominantly affecting their anisotropic semiconducting properties. Anisotropy in the magnetic properties is also found, where AFM ordering is expected to occur in the in-plane direction, as supported by spin-structure calculations. Furthermore, a possible ferromagnetic (FM) transition is discussed in relation to the vacancy defects. This study provides a candidate material group for AFM and FM spintronics and a basis for exploring magnetic semiconductors in quasi-2D layer-structured systems.

Electron-deficient ternary and quaternary pnictides Rb4Zn7As7, Rb4Mn3.5Zn3.5Sb7, Rb7Mn12Sb12, and Rb7Mn4Cd8Sb12 with corrugated anionic layers

The ternary pnictides Rb4Zn7As7 and Rb7Mn12Sb12 and their quaternary derivatives Rb4Mn3.5Zn3.5Sb7 and Rb7Mn4Cd8Sb12 have been prepared by reactions of the elements at 600 °C. They crystallize in two new structure types: orthorhombic Rb4Zn7As7-type (space group Cmcm, Z = 4; a = 4.1883(4) Å, b = 24.844(2) Å, c = 17.6056(17) Å for Rb4Zn7As7; a = 4.3911(8) Å, b = 26.546(5) Å, c = 18.743(4) Å for Rb4Mn3.5Zn3.5Sb7) and monoclinic Rb7Mn12Sb12-type (space group C2/m, Z = 2; a = 26.544(12) Å, b = 4.448(2) Å, c = 16.676(8) Å, β = 103.183(8)° for Rb7Mn12Sb12; a = 27.009(4) Å, b = 4.5752(7) Å, c = 16.727(3) Å, β = 103.221(2)° for Rb7Mn4Cd8Sb12). These related structures contain corrugated anionic layers built up by connecting ribbons of edge-sharing tetrahedra in a zigzag-like manner with chains of Mn-centered square pyramids located at the hinges. Homoatomic pnicogen-pnicogen bonding occurs in the form of Pn2 pairs. The compounds are formally deficient by one electron per formula unit, as confirmed by band structure calculations which reveal the location of the Fermi level just below a small gap in Rb4Zn7As7 or a pseudogap in Rb7Mn12Sb12.