Suspended single-crystal diamond nanowires for high-performance nanoelectromechanical switches

High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond

Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n- and p-channel conductivity are required for the development of diamond complementary metal-oxide-semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n-type channel MOS field-effect transistors (MOSFETs). Here, electronic-grade phosphorus-doped n-type diamond epilayer with an atomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around 150 cm2 V-1 s-1 at 573 K, which is the highest among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work enables the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.

Twin thickness-dependent tensile deformation mechanism on strengthening-softening of Si nanowires

Twin thickness-dependent deformation and the transition from strengthening to softening in twinned silicon nanowires are investigated using molecular dynamics simulations with cylindrical and hexagonal cross sections. The results show that the transition from strengthening to softening occurs at critical twin thicknesses of 8.1 nm (11.0 TB s) with cylindrical cross section and 11.0 nm (8 TBs) with hexagonal cross section with decreasing twin thickness, and that the strongest twin thickness originates from a transition in the initial plasticity mechanism from full dislocation nucleation and interaction with the TBs to partial dislocation nucleation and gliding parallel to the TBs. Moreover, it is found that the relationship between peak stress and twin thickness can be divided into two regions. Several full and partial dislocations are formed in the regions with strengthening twin thickness range. The accumulation and pile-up of these dislocations and their interaction with the TBs at high density cause the Hall-Petch strengthening behavior. In contrast, few full and partial dislocations are formed with softening twin thickness range. These dislocations are nucleated and propagate parallel to the TBs, resulting in TB migration that causes inverse Hall-Petch softening behavior. Our simulation results provide sufficient insight into the mechanical behavior of twinned silicon nanowires with cylindrical and hexagonal cross sections. The study will be helpful to the further understanding of CTB-related mechanical behaviors of non-metallic materials and non-metallic system.

Stress effect on the resonance properties of single-crystal diamond cantilever resonators for microscopy applications

Micro-cantilever beams have been widely used for surface sensing applications as well as atomic force microscope. However, surface stress appears in cantilever beams due to a variety of factors such as the absorption of molecules, temperature variations, materials imperfectness, and the fabrication process. Single-crystal diamond (SCD) has been regarded as an ideal material for cantilever sensors through the surface effect due to the outstanding mechanical rigidity and chemical inertness. In this paper, the authors report on the SCD cantilever beams fabricated by a smart-cut method with high quality factors up to 14 000 and stress characterization by surface geometry curvature observation and Raman microscopy. Although both surface geometry profile and Raman shift show the existence of surface stress in the SCD cantilever beams, the resonance properties are little influenced and maintain excellent rigidity and high quality. Therefore, the SCD-on-SCD resonator provides a promising platform for high-reliability microscopy applications.

Electrostatic pull-in application in flexible devices: A review

The electrostatic pull-in effect is a common phenomenon and a key parameter in the design of microscale and nanoscale devices. Flexible electronic devices based on the pull-in effect have attracted increasing attention due to their unique ductility. This review summarizes nanoelectromechanical switches made by flexible materials and classifies and discusses their applications in, among others, radio frequency systems, microfluidic systems, and electrostatic discharge protection. It is supposed to give researchers a more comprehensive understanding of the pull-in phenomenon and the development of its applications. Also, the review is meant to provide a reference for engineers to design and optimize devices.

Bouncing dynamics of electrostatically actuated NEM switches

The aim of the present research is to understand the bouncing dynamic behavior of nano electromechanical (NEM) switches in order to improve the switch performance and reliability. It is well known that bouncing can dramatically degrade the switch performance and life; hence, in the present study, the bouncing dynamics of a cantilever-based NEM switch has been studied in detail. To this end, the repulsive van der Waals force is incorporated into a nano-switch model to capture the contact dynamics. Intermolecular forces, surface effects, and gas rarefication effects were also included in the proposed model. The Euler-Bernoulli beam theory and an approximate approach based on Galerkin’s method have been employed to predict transient dynamic responses. In the present study, performance parameters such as initial contact time, permanent contact time, major bounce height, and the number of bounces, were quantified in the presence of interactive system nonlinearities. The performance parameters were used to investigate the influence of surface effects and rarefication effects on the performance of an electrostatically actuated switch. Recommended operating conditions are suggested to avoid excessive bouncing for these types of NEM switches.

Effect of Deep-Defects Excitation on Mechanical Energy Dissipation of Single-Crystal Diamond

The ultrawide band gap of diamond distinguishes it from other semiconductors, in that all known defects have deep energy levels that are less active at room temperature. Here, we present the effect of deep defects on the mechanical energy dissipation of single-crystal diamond experimentally and theoretically up to 973 K. Energy dissipation is found to increase with temperature and exhibits local maxima due to the interaction between phonons and deep defects activated at specific temperatures. A two-level model with deep energies is proposed to explain well the energy dissipation at elevated temperatures. It is evident that the removal of boron impurities can substantially increase the quality factor of room-temperature diamond mechanical resonators. The deep energy nature of the defects bestows single-crystal diamond with outstanding low intrinsic energy dissipation in mechanical resonators at room temperature or above.

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III-nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom-up and top-down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast-emerging research field.

Geometrically Structured Nanomaterials for Nanosensors, NEMS, and Nanosieves

Recently, geometrically structured nanomaterials have received great attention due to their unique physical and chemical properties, which originate from the geometric variation in such materials. Indeed, the use of various geometrically structured nanomaterials has been actively reported in enhanced-performance devices in a wide range of applications. Recent significant progress in the development of geometrically structured nanomaterials and associated devices is summarized. First, a brief introduction of advanced nanofabrication methods that enable the fabrication of various geometrically structured nanomaterials is given, and then the performance enhancements achieved in devices utilizing these nanomaterials, namely, i) physical and gas nanosensors, ii) nanoelectromechanical devices, and iii) nanosieves are described. For the device applications, a systematic summary of their structures, working mechanisms, fabrication methods, and output performance is provided. Particular focus is given to how device performance can be enhanced through the geometric structures of the nanomaterials. Finally, perspectives on the development of novel nanomaterial structures and associated devices are presented.

Nanoelectromechanical graphene switches for the multi-valued logic systems

Graphene based multi-valued nanoelectromechanical switches are suggested and demonstrated. The device structure having multiple contact sites with different heights under the doubly clamped suspended beam provides multiple contacts to be formed sequentially from the taller electrode to the shorter electrode, which results in multiple logic states. Based on the finite element method simulation, we found that our device characteristics, such as turn-on and threshold voltages, are highly governed by the device design. The proof-of-concept device realized by using a newly developed 3D fabrication method based on the e-beam lithography expresses quaternary logic states successfully with a high stability in repetitive operations.

Effect of Metal Ions on Hybrid Graphite-Diamond Nanowire Growth: Conductivity Measurements from a Single Nanowire Device

Novel Cd²⁺ ions mediated reproducible hybrid graphite-diamond nanowire (G-DNWs; Cd²⁺-NDS1 NW) growth from 4-Amino-5-phenyl-4H-1,2,4-triazole-3-thiol (S1) functionalized diamond nanoparticles (NDS1) via supramolecular assembly is reported and demonstrated through TEM and AFM images. FTIR, EDX and XPS studies reveal the supramolecular coordination between functional units of NDS1 and Cd²⁺ ions towards NWs growth. Investigations of XPS, XRD and Raman data show the covering of graphite sheath over DNWs. Moreover, HR-TEM studies on Cd²⁺-NDS1 NW confirm the coexistence of less perfect sp² graphite layer and sp³ diamond carbon along with impurity channels and flatten surface morphology. Possible mechanisms behind the G-DNWs growth are proposed and clarified. Subsequently, conductivity of the as-grown G-DNWs is determined through the fabrication of a single Cd²⁺-NDS1 NW device, in which the G-DNW portion L2 demonstrates a better conductivity of 2.31 × 10⁻⁴ mS/cm. In addition, we investigate the temperature-dependent carrier transport mechanisms and the corresponding activation energy in details. Finally, comparisons in electrical resistivities with other carbon-based materials are made to validate the importance of our conductivity measurements.

>1000-Fold Lifetime Extension of a Nickel Electromechanical Contact Device via Graphene

Micro-/nano-electromechanical (M/NEM) switches have received significant attention as promising switching devices for a wide range of applications such as computing, radio frequency communication, and power gating devices. However, M/NEM switches still suffer from unacceptably low reliability because of irreversible degradation at the contacting interfaces, hindering adoption in practical applications and further development. Here, we evaluate and verify graphene as a contact material for reliability-enhanced M/NEM switching devices. Atomic force microscopy experiments and quantum mechanics calculations reveal that energy-efficient mechanical contact-separation characteristics are achieved when a few layers of graphene are used as a contact material on a nickel surface, reducing the energy dissipation by 96.6% relative to that of a bare nickel surface. Importantly, graphene displays almost elastic contact-separation, indicating that little atomic-scale wear, including plastic deformation, fracture, and atomic attrition, is generated. We also develop a feasible fabrication method to demonstrate a MEM switch, which has high-quality graphene as the contact material, and verify that the devices with graphene show mechanically stable and elastic-like contact properties, consistent with our nanoscale contact experiment. The graphene coating extends the switch lifetime >10³ times under hot switching conditions.

Flexible Capacitive Piezoelectric Sensor with Vertically Aligned Ultralong GaN Wires

We report a simple and scalable fabrication process of flexible capacitive piezoelectric sensors using vertically aligned gallium nitride (GaN) wires as well as their physical principles of operation. The as-grown N-polar GaN wires obtained by self-catalyst metal-organic vapor phase epitaxy are embedded into a polydimethylsiloxane (PDMS) matrix and directly peeled off from the sapphire substrate before metallic electrode contacting. This geometry provides an efficient control of the wire orientation and an additive contribution of the individual piezoelectric signals. The device output voltage and efficiency are studied by finite element calculations for compression mechanical loading as a function of the wire geometrical growth parameters (length and density). We demonstrate that the voltage output level and sensitivity increases as a function of the wire length and that a conical shape is not mandatory for potential generation as it was the case for horizontally assembled devices. The optimal design to improve the overall device response is also optimized in terms of wire positioning inside PDMS, wire density, and total device thickness. Following the results of these calculations, we have fabricated experimental devices exhibiting outputs of several volts with a very good reliability under cyclic mechanical excitation.

An Affordable Wet Chemical Route to Grow Conducting Hybrid Graphite-Diamond Nanowires: Demonstration by A Single Nanowire Device

We report an affordable wet chemical route for the reproducible hybrid graphite-diamond nanowires (G-DNWs) growth from cysteamine functionalized diamond nanoparticles (ND-Cys) via pH induced self-assembly, which has been visualized through SEM and TEM images. Interestingly, the mechanistic aspects behind that self-assembly directed G-DNWs formation was discussed in details. Notably, above self-assembly was validated by AFM and TEM data. Further interrogations by XRD and Raman data were revealed the possible graphite sheath wrapping over DNWs. Moreover, the HR-TEM studies also verified the coexistence of less perfect sp² graphite layer wrapped over the sp³ diamond carbon and the impurity channels as well. Very importantly, conductivity of hybrid G-DNWs was verified via fabrication of a single G-DNW. Wherein, the better conductivity of G-DNW portion L2 was found as 2.4 ± 1.92 × 10⁻⁶ mS/cm and revealed its effective applicability in near future. In addition to note, temperature dependent carrier transport mechanisms and activation energy calculations were reported in details in this work. Ultimately, to demonstrate the importance of our conductivity measurements, the possible mechanism behind the electrical transport and the comparative account on electrical resistivities of carbon based materials were provided.

Resonating Behaviour of Nanomachined Holed Microcantilevers

The nanofabrication of a nanomachined holed structure localized on the free end of a microcantilever is here presented, as a new tool to design micro-resonators with enhanced mass sensitivity. The proposed method allows both for the reduction of the sensor oscillating mass and the increment of the resonance frequency, without decreasing the active surface of the device. A theoretical analysis based on the Rayleigh method was developed to predict resonance frequency, effective mass, and effective stiffness of nanomachined holed microresonators. Analytical results were checked by Finite Element simulations, confirming an increase of the theoretical mass sensitivity up to 250%, without altering other figures of merit. The nanomachined holed resonators were vibrationally characterized, and their Q-factor resulted comparable with solid microcantilevers with same planar dimensions.

Strain-driven and ultrasensitive resistive sensor/switch based on conductive alginate/nitrogen-doped carbon-nanotube-supported Ag hybrid aerogels with pyramid design

Flexible strain-driven sensor is an essential component in the flexible electronics. Especially, high durability and sensitivity to strain are required. Here, we present an efficient and low-cost fabrication strategy to construct a highly sensitive and flexible pressure sensor based on a conductive, elastic aerogel with pyramid design. When pressure is loaded, the contact area between the interfaces of the conductive aerogel and the copper electrode as well as among the building blocks of the nitrogen-doped carbon-nanotube-supported Ag (N-CNTs/Ag) aerogel monoliths, changes in reversible and directional manners. This contact resistance mechanism enables the hybrid aerogels to act as strain-driven sensors with high sensitivity and excellent on/off swithching behavior, and the gauge factor (GF) is ∼15 under strain of 3%, which is superior to those reported for other aerogels. In addition, robust, elastomeric and conductive nanocomposites can be fabricated by injecting polydimethylsiloxane (PDMS) into alginate/N-CNTs/Ag aerogels. Importantly, the building blocks forming the aerogels retain their initial contact and percolation after undergoing large-strain deformation, PDMS infiltration, and cross-linking of PDMS, suggesting their potential applications as strain sensors.

Diamond nanowires: fabrication, structure, properties, and applications

C(sp(3) )C-bonded diamond nanowires are wide band gap semiconductors that exhibit a combination of superior properties such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness, and room-temperature thermal conductivity. The creation of 1D diamond nanowires with their giant surface-to-volume ratio enhancements makes it possible to control and enhance the fundamental properties of diamond. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. We present a comprehensive, up-to-date review of diamond nanowires, including a discussion of their synthesis along with their structures, properties, and applications.

Control of crystallographic orientation in diamond synthesis through laser resonant vibrational excitation of precursor molecules

Crystallographic orientations determine the optical, electrical, mechanical, and thermal properties of crystals. Control of crystallographic orientations has been studied by changing the growth parameters, including temperature, pressure, proportion of precursors, and surface conditions. However, molecular dynamic mechanisms underlying these controls remain largely unknown. Here we achieved control of crystallographic orientations in diamond growth through a joint experimental and theoretical study of laser resonant vibrational excitation of precursor molecules (ethylene). Resonant vibrational excitation of the ethylene molecules using a wavelength-tunable CO2 laser steers the chemical reactions and promotes proportion of intermediate oxide species, which results in preferential growth of {100}-oriented diamond films and diamond single crystals in open air. Quantum molecular dynamic simulations and calculations of chemisorption energies of radicals detected from our mass-spectroscopy experiment provide an in-depth understanding of molecular reaction mechanisms in the steering of chemical reactions and control of crystallographic orientations. This finding opens up a new avenue for controlled chemical vapor deposition of crystals through resonant vibrational excitations to steer surface chemistry.

Large arrays and properties of 3-terminal graphene nanoelectromechanical switches

Large arrays of 3-terminal nanoelectromechanical graphene switches are fabricated. The switch is designed with a novel geometry that leads to low actuation voltages and improved mechanical integrity, while reducing adhesion forces, which improves the reliability of the switch. A finite element model including non-linear electromechanics is used to simulate the switching behavior and to deduce a scaling relation between the switching voltage and device dimensions.

Direct measurement and modelling of internal strains in ion-implanted diamond

We present a phenomenological model and finite element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution x-ray diffraction; secondly, the mass density variation of a sample implanted with 500 keV He ions, well above its amorphization threshold, is characterized with electron energy loss spectroscopy. At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage density peak towards greater depth values with respect to those predicted by TRIM simulations, which are well accounted for in the model presented here. The model is then further validated by comparing transmission electron microscopy-measured and simulated thickness values of a buried amorphous carbon layer formed at different depths by implantation of 500 keV He ions through a variable-thickness mask to simulate the simultaneous implantation of ions at different energies.

Free-standing mechanical and photonic nanostructures in single-crystal diamond

A variety of nanoscale photonic, mechanical, electronic, and optoelectronic devices require scalable thin film fabrication. Typically, the device layer is defined by thin film deposition on a substrate of a different material, and optical or electrical isolation is provided by the material properties of the substrate or by removal of the substrate. For a number of materials this planar approach is not feasible, and new fabrication techniques are required to realize complex nanoscale devices. Here, we report a three-dimensional fabrication technique based on anisotropic plasma etching at an oblique angle to the sample surface. As a proof of concept, this angled-etching methodology is used to fabricate free-standing nanoscale components in bulk single-crystal diamond, including nanobeam mechanical resonators, optical waveguides, and photonic crystal and microdisk cavities. Potential applications of the fabricated prototypes range from classical and quantum photonic devices to nanomechanical-based sensors and actuators.

Beat phenomena in metal nanowires, and their implications for resonance-based elastic property measurements

The elastic properties of 1D nanostructures such as nanowires are often measured experimentally through actuation of nanowires at their resonance frequency, and then relating the resonance frequency to the elastic stiffness using the elementary beam theory. In the present work, we utilize large scale molecular dynamics simulations to report a novel beat phenomenon in [110] oriented Ag nanowires. The beat phenomenon is found to arise from the asymmetry of the lattice spacing in the orthogonal elementary directions of [110] nanowires, i.e. the [110] and [001] directions, which results in two different principal moments of inertia. Because of this, actuations imposed along any other direction are found to decompose into two orthogonal vibrational components based on the actuation angle relative to these two elementary directions, with this phenomenon being generalizable to <110> FCC nanowires of different materials (Cu, Au, Ni, Pd and Pt). The beat phenomenon is explained using a discrete moment of inertia model based on the hard sphere assumption; the model is utilized to show that surface effects enhance the beat phenomenon, while effects are reduced with increasing nanowire cross-sectional size or aspect ratio. Most importantly, due to the existence of the beat phenomena, we demonstrate that in resonance experiments only a single frequency component is expected to be observed, particularly when the damping ratio is relatively large or very small. Furthermore, for a large range of actuation angles, the lower frequency is more likely to be detected than the higher one, which implies that experimental predictions of the Young's modulus obtained from resonance may in fact be under-predictions. The present study therefore has significant implications for experimental interpretations of the Young's modulus as obtained via resonance testing.

Diamond nanowires for highly sensitive matrix-free mass spectrometry analysis of small molecules

This paper reports on the use of boron-doped diamond nanowires (BDD NWs) as an inorganic substrate for matrix-free laser desorption/ionization mass spectrometry (LDI-MS) analysis of small molecules. The diamond nanowires are prepared by reactive ion etching (RIE) with oxygen plasma of highly boron-doped (the boron level is 10(19) B cm(-3)) or undoped nanocrystalline diamond substrates. The resulting diamond nanowires are coated with a thin silicon oxide layer that confers a superhydrophilic character to the surface. To minimize droplet spreading, the nanowires were chemically functionalized with octadecyltrichlorosilane (OTS) and then UV/ozone treated to reach a final water contact angle of 120°. The sub-bandgap absorption under UV laser irradiation and the heat confinement inside the nanowires allowed desorption/ionization, most likely via a thermal mechanism, and mass spectrometry analysis of small molecules. A detection limit of 200 zeptomole for verapamil was demonstrated.

Ultrathin single crystal diamond nanomechanical dome resonators

We present the first nanomechanical resonators microfabricated in single-crystal diamond. Shell-type resonators only 70 nm thick, the thinnest single crystal diamond structures produced to date, demonstrate a high-quality factor (Q ≈ 1000 at room temperature, Q ≈ 20 000 at 10 K) at radio frequencies (50-600 MHz). Quality factor dependence on temperature and frequency suggests an extrinsic origin to the dominant dissipation mechanism and methods to further enhance resonator performance.