Inking elastomeric stamps with micro-patterned, single layer graphene to create high-performance OFETs

High Sensitivity and Ultra-Broad-Range NH3 Sensor Arrays by Precise Control of Step Defects on The Surface of Cl2-Ndi Single Crystals

Vapor sensors with both high sensitivity and broad detection range are technically challenging yet highly desirable for widespread chemical sensing applications in diverse environments. Generally, an increased surface-to-volume ratio can effectively enhance the sensitivity to low concentrations, but often with the trade-off of a constrained sensing range. Here, an approach is demonstrated for NH3 sensor arrays with an unprecedentedly broad sensing range by introducing controllable steps on the surface of an n-type single crystal. Step edges, serving as adsorption sites with electron-deficient properties, are well-defined, discrete, and electronically active. NH3 molecules selectively adsorb at the step edges and nearly eliminate known trap-like character, which is demonstrated by surface potential imaging. Consequently, the strategy can significantly boost the sensitivity of two-terminal NH3 resistance sensors on thin crystals with a few steps while simultaneously enhancing the tolerance on thick crystals with dense steps. Incorporation of these crystals into parallel sensor arrays results in ppb-to-% level detection range and a convenient linear relation between sheet conductance and semi-log NH3 concentration, allowing for the precise localization of vapor leakage. In general, the results suggest new opportunities for defect engineering of organic semiconductor crystal surfaces for purposeful vapor or chemical sensing.

Real-Time Monitoring of Cell Adhesion onto a Soft Substrate by a Graphene Impedance Biosensor

Soft substrates are interesting for many applications, ranging from mimicking the cellular microenvironment to implants. Conductive electrodes on such substrates allow the realization of flexible, elastic, and transparent sensors. Single-layer graphene as a candidate for such electrodes brings the advantage that the active area of the sensor is transparent and conformal to the underlying substrate. Here, we overcome several challenges facing the routine realization of graphene cell sensors on a canonical soft substrate, namely, poly(dimethylsiloxane) (PDMS). We have systematically studied the effect of surface energy before, during, and after the transfer of graphene. Thus, we have identified a suitable support polymer, optimal substrate (pre)treatment, and an appropriate solvent for the removal of the support. Using this procedure, we can reproducibly obtain stable and intact graphene sensors on a millimeter scale on PDMS, which can withstand continuous measurements in cell culture media for several days. From local nanomechanical measurements, we infer that the softness of the substrate is slightly affected after the graphene transfer. However, we can modulate the stiffness using PDMS with differing compositions. Finally, we show that graphene sensors on PDMS can be successfully used as soft electrodes for real-time monitoring of the cell adhesion kinetics. The routine availability of single-layer graphene electrodes on a soft substrate with tunable stiffness will open a new avenue for studies, where the PDMS-liquid interface is made conducting with minimal alteration of the intrinsic material properties such as softness, flexibility, elasticity, and transparency.

Graphene as a Piezoresistive Material in Strain Sensing Applications

High accuracy measurement of mechanical strain is critical and broadly practiced in several application areas including structural health monitoring, industrial process control, manufacturing, avionics and the automotive industry, to name a few. Strain sensors, otherwise known as strain gauges, are fueled by various nanomaterials, among which graphene has attracted great interest in recent years, due to its unique electro-mechanical characteristics. Graphene shows not only exceptional physical properties but also has remarkable mechanical properties, such as piezoresistivity, which makes it a perfect candidate for strain sensing applications. In the present review, we provide an in-depth overview of the latest studies focusing on graphene and its strain sensing mechanism along with various applications. We start by providing a description of the fundamental properties, synthesis techniques and characterization methods of graphene, and then build forward to the discussion of numerous types of graphene-based strain sensors with side-by-side tabular comparison in terms of figures-of-merit, including strain range and sensitivity, otherwise referred to as the gauge factor. We demonstrate the material synthesis, device fabrication and integration challenges for researchers to achieve both wide strain range and high sensitivity in graphene-based strain sensors. Last of all, several applications of graphene-based strain sensors for different purposes are described. All in all, the evolutionary process of graphene-based strain sensors in recent years, as well as the upcoming challenges and future directions for emerging studies are highlighted.

Graphene Transfer: A Physical Perspective

Graphene, synthesized either epitaxially on silicon carbide or via chemical vapor deposition (CVD) on a transition metal, is gathering an increasing amount of interest from industrial and commercial ventures due to its remarkable electronic, mechanical, and thermal properties, as well as the ease with which it can be incorporated into devices. To exploit these superlative properties, it is generally necessary to transfer graphene from its conductive growth substrate to a more appropriate target substrate. In this review, we analyze the literature describing graphene transfer methods developed over the last decade. We present a simple physical model of the adhesion of graphene to its substrate, and we use this model to organize the various graphene transfer techniques by how they tackle the problem of modulating the adhesion energy between graphene and its substrate. We consider the challenges inherent in both delamination of graphene from its original substrate as well as relamination of graphene onto its target substrate, and we show how our simple model can rationalize various transfer strategies to mitigate these challenges and overcome the introduction of impurities and defects into the graphene. Our analysis of graphene transfer strategies concludes with a suggestion of possible future directions for the field.

Two-dimensional materials as solid-state nanopores for chemical sensing

Solid-state nanopores as a versatile alternative to biological nanopores have grown tremendously over the last two decades. They exhibit unique characteristics including mechanical robustness, thermal and chemical stability, easy modifications and so on. Moreover, the pore size of a solid-state nanopore could be accurately controlled from sub-nanometers to hundreds of nanometers based on the experimental requirements, presenting better adaptability than biological nanopores. Two-dimensional (2D) materials with single layer thicknesses and highly ordered structures have great potential as solid-state nanopores. In this perspective, we introduced three kinds of substrate-supported 2D material solid-state nanopores, including graphene, MoS₂ and MOF nanosheets, which exhibited big advantages compared to traditional solid-state nanopores and other biological counterparts. Besides, we suggested the fabrication and modulation of 2D material solid-state nanopores. We also discussed the applications of 2D materials as solid-state nanopores for ion transportation, DNA sequencing and biomolecule detection.

Screening of hydrogen bonding interactions by a single layer graphene

A single layer of graphene when transferred to a solid substrate has the ability to screen or transmit interactions from the underlying substrate, which has direct consequences in applications of this 2D material to flexible electronics and sensors. Previous reports using a multitude of techniques present contradictory views on graphene's ability to screen or transmit van der Waals (vdW) and polar interactions. In the present study, we use interface-sensitive spectroscopy to demonstrate that a single layer graphene is opaque to hydrogen bonding interactions (a subset of acid-base interactions), answering a question that has remained unresolved for a decade. Similar frequency shifts of sapphire hydroxyl (OH) peak for graphene-coated sapphire in contact with air and polydimethylsiloxane (PDMS) demonstrate the insensitivity of sapphire OH to PDMS. The screening ability of graphene is also evident in the smaller magnitude of this frequency shift for graphene-coated sapphire in comparison to that for bare sapphire. The screening of acid-base interactions by a single layer graphene results in the significant reduction of adhesion hysteresis for PDMS lens on graphene-coated substrates (sapphire and silicon wafer, SiO₂/Si) than bare substrates. Our results have implications in the use of PDMS stamps to transfer graphene to other substrates eliminating the need for a wet-transfer process.

Wafer-Scale Integration of Graphene-Based Photonic Devices

Graphene and related materials can lead to disruptive advances in next-generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (≥5000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapor deposition (CVD) of single layer graphene (SLG) matrices comprising up to ∼12000 individual single crystals, grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ∼80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ∼5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ∼0.25, 0.45, 0.75, 1 dB V-1 for device lengths ∼30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hexagonal boron nitride (hBN) is used to protect SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. The processes are compatible with full automation. This paves the way for large scale production of graphene-based photonic devices.

Facile Morphological Qualification of Transferred Graphene by Phase-Shifting Interferometry

Post-growth graphene transfer to a variety of host substrates for circuitry fabrication has been among the most popular subjects since its successful development via chemical vapor deposition in the past decade. Fast and reliable evaluation tools for its morphological characteristics are essential for the development of defect-free transfer protocols. The implementation of conventional techniques, such as Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy in production quality control at an industrial scale is difficult because they are limited to local areas, are time consuming, and their operation is complex. However, through a one-shot measurement within a few seconds, phase-shifting interferometry (PSI) successfully scans ≈1 mm² of transferred graphene with a vertical resolution of ≈0.1 nm. This provides crucial morphological information, such as the surface roughness derived from polymer residues, the thickness of the graphene, and its adhesive strength with respect to the target substrates. Graphene samples transferred via four different methods are evaluated using PSI, Raman spectroscopy, and AFM. Although the thickness of the nanomaterials measured by PSI can be highly sensitive to their refractive indices, PSI is successfully demonstrated to be a powerful tool for investigating the morphological characteristics of the transferred graphene for industrial and research purposes.

Morphology and transport characterization of solution-processed rubrene thin films on polymer-modified substrates

In this report, the morpho-structural peculiarities and the crystallization mechanisms in solution-processed, solvent vapor annealed (SVA) thin films of rubrene (5,6,11,12-tetraphenylnaphthacene) on different substrates were investigated. The high-quality rubrene crystal films with a triclinic crystal structure were successfully prepared on the FTO substrates (glass slide coated with fluorine-tin-oxide) modified by PLA (polylactic acid) for the first time. The area coverage of rubrene crystal and the sizes of rubrene dendritic crystals increased with increasing thickness of PLA film and concentration of rubrene solution. For rubrene molecules, FTO wafers with rough surface provided the possibility of heterogeneous nucleation. During the SVA process, there were two kinds of forces acting on the diffusion of rubrene molecules: one force was provided by the residual chloroform solvent, which was perpendicular to the substrate, and the other force was provided by gaseous dichloromethane, which was parallel to the substrate. The synergy of these two forces was proposed to explain the nucleation and the crystallization processes of rubrene films. The higher nucleus of PLA/rubrene dendrites and the layer-by-layer stacking of needle-shaped nanocrystalline PLA/rubrene were important for exploring their kinetic formation process.

Plasma-Doped Si Nanosheets for Transistor and p-n Junction Application

Since the discovery of graphene, layered transition metal dichalcogenides (TMDs) have been considered promising materials for applications in various fields because of their fascinating structural features and physical properties. Doping in semiconducting TMDs is essential for their practical application. In this regard, two-dimensional (2D) Si materials have emerged as a key component of 2D electronic, optics, sensing, and spintronic devices because of their complementary metal-oxide-semiconductor (CMOS) compatibility, high-quality oxide formation, moderated bandgap, and well-established doping techniques. Here, we report the tuning of the electronic properties of Si nanosheets (NSs) using a plasma-doping technique. Using this doping process, we fabricated p-n homojunction diodes and transistors with Si NSs. The estimated high ON/OFF ratio of ∼10⁶ and field-effect hole mobility of 329 cm² V^-1 s^-1 suggest a high crystal quality of the Si NSs. We also demonstrate vertically stacked heterostructured p-n junction diodes with MoS₂, which exhibit rectifying properties and excellent light response.

Synthesis and Characterization of Multi-Walled Carbon Nanotube/Graphene Nanoplatelet Hybrid Film for Flexible Strain Sensors

Graphene nanoplatelet (GNP) and multi-walled carbon nanotube (MWCNT) hybrid films were prepared with the aid of surfactant Triton X-100 and sonication through a vacuum filtration process. The influence of GNP content ranging from 0 to 50 wt.% on the mechanical and electrical properties was investigated using the tensile test and Hall effect measurement, respectively. It showed that the tensile strength of the hybrid film is decreasing with the increase of the GNP content while the electrical conductivity exhibits an opposite trend. The effectiveness of the MWCNT/GNP hybrid film as a strain sensor is presented. The specimen is subjected to a flexural loading, and the electrical resistance measured by a two-point probe method is found to be function of applied strain. Experimental results demonstrate that there are two different linear strain-sensing stages (0⁻0.2% and 0.2⁻1%) in the resistance of the hybrid film with applied strain. The strain sensitivity is increasing with the increase of the GNP content. In addition, the repeatability and stability of the strain sensitivity of the hybrid film were conformed through the cyclic loading⁻unloading tests. The MWCNT/GNP hybrid film shows promising application for strain sensing.

Poly(dimethylsiloxane) Stamp Coated with a Low-Surface-Energy, Diffusion-Blocking, Covalently Bonded Perfluoropolyether Layer and Its Application to the Fabrication of Organic Electronic Devices by Layer Transfer

It is demonstrated that a stamp composed of a poly(dimethylsiloxane) (PDMS) bulk and perfluoropolyether (PFPE) coating fabricated by a simple dip-coating method has the following properties that are ideal for the transfer patterning of various materials. Deposited by a condensation reaction between PDMS and PFPE molecules as well as the adjacent PFPE molecules, the PFPE coating has a strong adhesion to the PDMS surface and strong internal cohesion, while providing a low energy surface. Furthermore, it is found to function as a bidirectional diffusion barrier: it effectively prevents organic small molecules deposited on the stamp from being absorbed into free volumes of PDMS; it also prevents PDMS oligomers from migrating onto the layer to be transferred, thereby avoiding the contamination of that layer. Morphological and elemental characterization of the surfaces of the transferred organic semiconductor and graphene layers confirms a successful transfer with a high degree of surface cleanliness. The quality of interfaces mechanically bonded using the PFPE-coated stamps and the cleanliness of the transferred layers are remarkably high that the electronic functions of a transfer-bonded organic heterojunction are comparable to those of the same interface formed by vacuum deposition, and that the charge transport across the transfer-bonded graphene-graphene and graphene-MoO₃ interfaces is efficient. Our results demonstrate that the PFPE-coated stamp enables patterned depositions of materials with high quality interfaces while avoiding a high temperature or wet process.

Epitaxially Grown Ferroelectric PVDF-TrFE Film on Shape-Tailored Semiconducting Rubrene Single Crystal

Epitaxial crystallization of thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) films is important for the full utilization of their ferroelectric properties. Epitaxy can offer a route for maximizing the degree of crystallinity with the effective orientation of the crystals with respect to the electric field. Despite various approaches for the epitaxial control of the crystalline structure of PVDF-TrFE, its epitaxy on a semiconductor is yet to be accomplished. Herein, the epitaxial growth of PVDF-TrFE crystals on a single-crystalline organic semiconductor rubrene grown via physical vapor deposition is presented. The epitaxy results in polymer crystals globally ordered with specific crystal orientations dictated by the epitaxial relation between the polymer and rubrene crystal. The lattice matching between the c-axis of PVDF-TrFE crystals and the (210) plane of orthorhombic rubrene crystals develops two degenerate crystal orientations of the PVDF-TrFE crystalline lamellae aligned nearly perpendicular to each other. Thin PVDF-TrFE films with epitaxially grown crystals are incorporated into metal/ferroelectric polymer/metal and metal/ferroelectric polymer/semiconductor/metal capacitors, which exhibit excellent nonvolatile polarization and capacitance behavior, respectively. Furthermore, combined with a printing technique for micropatterning rubrene single crystals, the epitaxy of a PVDF-TrFE film is formed selectively on the patterned rubrene with characteristic epitaxial crystal orientation over a large area.

NLL-Assisted Multilayer Graphene Patterning

The range of applications of diverse graphene-based devices could be limited by insufficient surface reactivity, unsatisfied shaping, or null energy gap of graphene. Engineering the graphene structure by laser techniques can adjust the transport properties and the surface area of graphene, providing devices of different nature with a higher capacitance. Additionally, the created periodic potential and appearance of the active external/inner/edge surface centers determine the multifunctionality of the graphene surface and corresponding devices. Here, we report on the first implementation of nonlinear laser lithography (NLL) for multilayer graphene (MLG) structuring, which offers a low-cost, single-step, and high-speed nanofabrication process. The NLL relies on the employment of a high repetition rate femtosecond Yb fiber laser that provides generation of highly reproducible, robust, uniform, and periodic nanostructures over a large surface area (1 cm²/15 s). NLL allows one to obtain clearly predesigned patterned graphene structures without fabrication tolerances, which are caused by contacting mask contamination, polymer residuals, and direct laser exposure of the graphene layers. We represent regularly patterned MLG (p-MLG) obtained by the chemical vapor deposition method on an NLL-structured Ni foil. We also demonstrate tuning of chemical (wettability) and electro-optical (transmittance and sheet resistance) properties of p-MLG by laser power adjustments. In conclusion, we show the great promise of fabricated devices, namely, supercapacitors, and Li-ion batteries by using NLL-assisted graphene patterning. Our approach demonstrates a new avenue to pattern graphene for multifunctional device engineering in optics, photonics, and bioelectronics.

Area-Controllable Stamping of Semicrystalline Copolymer Ionogels for Solid-State Electrolyte-Gated Transistors and Light-Emitting Devices

Two types of thin-film electrochemical devices (electrolyte-gated transistors and electrochemical light-emitting cells) are demonstrated using area-controllable ionogel patches generated by transfer-stamping. For the successful transfer of ionogel patches on various target substrates, thermoreversible gelation by phase-separated polymer crystals within the ionogel is essential because it allows the gel to form a conformal contact with the acceptor substrate, thereby lowering the overall Gibbs energy of the system upon transfer of the ionogel. This crystallization-mediated stamping provides a much more efficient deposition route for producing thin films of ionically conductive high-capacitance solid ionogel electrolytes. The lateral dimensions of the transferred ionogels range from 1 mm × 1 mm to 40 mm × 40 mm. These ionogel patches are incorporated in organic p-type and inorganic n-type thin-film transistors and electrochemical light-emitting devices. The resulting transistors show sub-1 V device operation with high transconductance currents, and the optoelectronic devices emit orange light through a series of electrochemical redox reactions. These results demonstrate a simple yet versatile route to employ physical ionogels for various solid-state electrochemical device applications.

An All-Silk-Derived Dual-Mode E-skin for Simultaneous Temperature-Pressure Detection

Flexible skin-mimicking electronics are highly desired for development of smart human-machine interfaces and wearable human-health monitors. Human skins are able to simultaneously detect different information, such as touch, friction, temperature, and humidity. However, due to the mutual interferences of sensors with different functions, it is still a big challenge to fabricate multifunctional electronic skins (E-skins). Herein, a combo temperature-pressure E-skin is reported through assembling a temperature sensor and a strain sensor in both of which flexible and transparent silk-nanofiber-derived carbon fiber membranes (SilkCFM) are used as the active material. The temperature sensor presents high temperature sensitivity of 0.81% per centigrade. The strain sensor shows an extremely high sensitivity with a gauge factor of ∼8350 at 50% strain, enabling the detection of subtle pressure stimuli that induce local strain. Importantly, the structure of the SilkCFM in each sensor is designed to be passive to other stimuli, enabling the integrated E-skin to precisely detect temperature and pressure at the same time. It is demonstrated that the E-skin can detect and distinguish exhaling, finger pressing, and spatial distribution of temperature and pressure, which cannot be realized using single mode sensors. The remarkable performance of the silk-based combo temperature-pressure sensor, together with its green and large-scalable fabrication process, promising its applications in human-machine interfaces and soft electronics.

Direct transfer of graphene and application in low-voltage hybrid transistors

Scotch tape assisted direct transfer of graphene is presented. Transferred graphene can act as a carrier transport layer in In₂O₃/graphene/ZrO₂transistor.

Measuring and Reporting Electrical Conductivity in Metal-Organic Frameworks: Cd2(TTFTB) as a Case Study

Electrically conductive metal-organic frameworks (MOFs) are emerging as a subclass of porous materials that can have a transformative effect on electronic and renewable energy devices. Systematic advances in these materials depend critically on the accurate and reproducible characterization of their electrical properties. This is made difficult by the numerous techniques available for electrical measurements and the dependence of metrics on device architecture and numerous external variables. These challenges, common to all types of electronic materials and devices, are especially acute for porous materials, whose high surface area make them even more susceptible to interactions with contaminants in the environment. Here, we use the anisotropic semiconducting framework Cd₂(TTFTB) (TTFTB^4- = tetrathiafulvalene tetrabenzoate) to benchmark several common methods available for measuring electrical properties in MOFs. We show that factors such as temperature, chemical environment (atmosphere), and illumination conditions affect the quality of the data obtained from these techniques. Consistent results emerge only when these factors are strictly controlled and the morphology and anisotropy of the Cd₂(TTFTB) single-crystal devices are taken into account. Most importantly, we show that depending on the technique, device construction, and/or the environment, a variance of 1 or even 2 orders of magnitude is not uncommon for even just one material if external factors are not controlled consistently. Differences in conductivity values of even 2 orders of magnitude should therefore be interpreted with caution, especially between different research groups comparing different compounds. These results allow us to propose a reliable protocol for collecting and reporting electrical properties of MOFs, which should help improve the consistency and comparability of reported electrical properties for this important new class of crystalline porous conductors.

Direct transfer of multilayer graphene grown on a rough metal surface using PDMS adhesion engineering

The direct transfer of graphene using polydimethylsiloxane (PDMS) stamping has advantages such as a 'pick-and-place' capability and no chemical residue problems. However, it is not easy to apply direct PDMS stamping to graphene grown via chemical vapor deposition on rough, grainy metal surfaces due to poor contact between the PDMS and graphene. In this study, graphene consisting of a mixture of monolayers and multiple layers grown on a rough Ni surface was directly transferred without the use of an adhesive layer. Liquid PDMS was cured on graphene to effect a conformal contact with the graphene. A fast release of graphene from substrate was achieved by carrying out wet-etching-assisted mechanical peeling. We also carried out a thermal post-curing of PDMS to control the level of adhesion between PDMS and graphene and hence facilitate a damage-free release of the graphene. Characterization of the transferred graphene by micro-Raman spectroscopy, SEM/EDS and optical microscopy showed neither cracks nor contamination from the transfer. This technique allows a fast and simple transfer of graphene, even for multilayer graphene grown on a rough surface.

Measuring the size dependence of thermal conductivity of suspended graphene disks using null-point scanning thermal microscopy

Using null-point scanning thermal microscopy (NP SThM), we have measured and analyzed the size dependence of the thermal conductivity of graphene. To do so, we rigorously re-derived the principal equation of NP SThM in terms of thermal property measurements so as to explain how this technique can be effectively used to quantitatively measure the local thermal resistance with nanoscale spatial resolution. This technique has already been proven to resolve the major problems of conventional SThM, and to quantitatively measure the temperature profile. Using NP SThM, we measured the variation in the thermal resistance of suspended chemical vapor deposition (CVD)-grown graphene disks with radii of 50-3680 nm from the center to the edge with respect to the size. By thoroughly analyzing the size dependence of the thermal resistance, we show that, with increasing graphene size, the ballistic resistance becomes more dominant in the thermal resistance experienced by a heat source of finite size and that the thermal conductivity experienced by such a heat source can even decrease. The results of this study reveal that the thermal conductivity of graphene detected by a heat source depends on the size of the heat source relative to that of the suspended graphene and on how the heat source and graphene are connected. As demonstrated in this study, NP SThM will be very useful for quantitative thermal characterization of not only CVD-grown graphene but also various other nanomaterials and nanodevices.

Transfer printing of CVD graphene FETs on patterned substrates

We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA-cleaning step to improve the surface quality. In contrast to conventional fabrication routes where lithographic steps are performed after the transfer, here graphene is transferred to a pre-patterned substrate. The resulting FET devices display nearly zero Dirac voltage, and the contact resistance between the graphene and metal contacts is on the order of 910 ± 340 Ω μm. This approach enables formation of conducting graphene channel lengths up to one millimeter. The resist-free transfer process provides a clean graphene surface that is promising for use in high sensitivity graphene FET biosensors.

Ultraclean patterned transfer of single-layer graphene by recyclable pressure sensitive adhesive films

We report an ultraclean, cost-effective, and easily scalable method of transferring and patterning large-area graphene using pressure sensitive adhesive films (PSAFs) at room temperature. This simple transfer is enabled by the difference in wettability and adhesion energy of graphene with respect to PSAF and a target substrate. The PSAF-transferred graphene is found to be free from residues and shows excellent charge carrier mobility as high as ∼17,700 cm(2)/V·s with less doping compared to the graphene transferred by thermal release tape (TRT) or poly(methyl methacrylate) (PMMA) as well as good uniformity over large areas. In addition, the sheet resistance of graphene transferred by recycled PSAF does not change considerably up to 4 times, which would be advantageous for more cost-effective and environmentally friendly production of large-area graphene films for practical applications.

Screen-printed resistive pressure sensors containing graphene nanoplatelets and carbon nanotubes

Polymer composites with nanomaterials such as graphene nanoplatelets and carbon nanotubes are a new group of materials with high application possibilities in printed and flexible electronics. In this study such carbon nanomaterials were used as a conductive phase in polymer composites. Pastes with dispersed nanomaterials in PMMA and PVDF vehicles were screen printed on flexible substrates, and used as an active layer in pressure sensors, exploiting contact resistance phenomena. The relationship between resistance and pressure is nearly linear on a logarithmic scale for selected types of samples, and their response is several times higher than for similar sensors with graphite layers. The use of surfactants allowed us to fabricate evenly dispersed nanomaterials with different amount of nanoplatelets and nanotubes in the composites. The samples contained from 1.25 wt.% to 2 wt.% of graphene and 1 wt.% to 0.5 wt.% of nanotubes and exhibited diverse sheet resistivity. Experiments revealed the relationship between morphology and loading of functional phase in the polymer matrix and the sensors' sensitivity.

Epitaxial growth of molecular crystals on van der waals substrates for high-performance organic electronics

Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.

25th anniversary article: carbon nanotube- and graphene-based transparent conductive films for optoelectronic devices

Carbon nanotube (CNT)- and graphene (G)-based transparent conductive films (TCFs) are two promising alternatives for commonly-used indium tin oxide-based TCFs for future flexible optoelectronic devices. This review comprehensively summarizes recent progress in the fabrication, properties, modification, patterning, and integration of CNT- and G-TCFs into optoelectronic devices. Their potential applications and challenges in optoelectronic devices, such as organic photovoltaic cells, organic light emitting diodes and touch panels, are discussed in detail. More importantly, their key characteristics and advantages for use in these devices are compared. Despite many challenges, CNT- and G-TCFs have demonstrated great potential in various optoelectronic devices and have already been used for some products like touch panels of smartphones. This illustrates the significant opportunities for the industrial use of CNTs and graphene, and hence pushes nanoscience and nanotechnology one step towards practical applications.

25th anniversary article: label-free electrical biodetection using carbon nanostructures

Nanostructures are promising candidates for use as active materials for the detection of chemical and biological species, mainly due to the high surface-to-volume ratio and the unique physical properties arising at the nanoscale. Among the various nanostructures, materials comprised of sp(2) -carbon enjoy a unique position due to the possibility to readily prepare them in various dimensions ranging from 0D, through 1D to 2D. This review focuses on the use of 1D (carbon nanotubes) and 2D (graphene) carbon nanostructures for the detection of biologically relevant molecules. A key advantage is the possibility to perform the sensing operation without the use of any labels or complex reaction schemes. Along this spirit, various strategies reported for the label-free electrical detection of biomolecules using carbon nanostructures are discussed. With their promise for ultimate sensitivity and the capability to attain high selectivity through controlled chemical functionalization, carbon-based nanobiosensors are expected to open avenues to novel diagnostic tools as well as to obtain new fundamental insight into biomolecular interactions down to the single molecule level.

Transfer printing of thermoreversible ion gels for flexible electronics

Thermally assisted transfer printing was employed to pattern thin films of high capacitance ion gels on polyimide, poly(ethylene terephthalate), and SiO2 substrates. The ion gels consisted of 20 wt % block copolymer poly(styrene-b-ethylene oxide-b-styrene and 80 wt % ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethyl sulfonyl)amide. Patterning resolution was on the order of 10 μm. Importantly, ion gels containing the block polymer with short PS end blocks (3.4 kg/mol) could be transfer-printed because of thermoreversible gelation that enabled intimate gel-substrate contact at 100 °C, while gels with long PS blocks (11 kg/mol) were not printable at the same temperature due to poor wetting contact between the gel and substrates. By using printed ion gels as high-capacitance gate insulators, electrolyte-gated thin-film transistors were fabricated that operated at low voltages (<1 V) with high on/off current ratios (∼10(5)). Statistical analysis of carrier mobility, turn-on voltage, and on/off ratio for an array of printed transistors demonstrated the excellent reproducibility of the printing technique. The results show that transfer printing is an attractive route to pattern high-capacitance ion gels for flexible thin-film devices.

Electrical contact at the interface between silicon and transfer-printed gold films by eutectic joining

This paper presents the electrical and morphological properties at the interface between a metal (Au) and a semiconductor (Si) formed by a novel transfer-printing technology. This work shows that a transfer-printed thin (hundreds of nanometers) Au film forms excellent electrical contact on a Si substrate when appropriate thermal treatment is applied. The successful electrical contact is attributed to eutectic joining, which allows for the right amount of atomic level mass transport between Au and Si. The outcomes suggest that transfer-printing-based micromanufacturing can realize not only strong mechanical bonding but also high-quality electrical contact via eutectic joining.

The effects of oxygen on controlling the number of carbon layers in the chemical vapor deposition of graphene on a nickel substrate

While oxygen is typically considered undesirable during the chemical vapor deposition (CVD) of graphene on metal substrates, we demonstrate that suitable amounts of oxygen in the CVD system can in fact improve the uniformity and thickness control of the graphene film. The role of oxygen on the CVD of graphene on a nickel substrate using a propylene precursor was investigated with various surface analytical techniques. It was found that the number of carbon layers in the deposited graphene sample decreases as the concentration of oxygen increases. In particular, single-layer graphene can be easily obtained with an oxygen/propylene ratio of 1/9. In the presence of oxygen, a thin layer of nickel oxide will form on the substrate. The oxide layer decreases the concentration of carbon atoms dissolved in the nickel substrate and results in graphene samples with a decreasing number of carbon layers.

A general method for transferring graphene onto soft surfaces

Recent advances in chemical vapour deposition have led to the fabrication of large graphene sheets on metal foils for use in research and development. However, further breakthroughs are required in the way these graphenes are transferred from their growth substrates onto the final substrate. Although various methods have been developed, as yet there is no general way to reliably transfer graphene onto arbitrary surfaces, such as 'soft' ones. Here, we report a method that allows the graphene to be transferred with high fidelity at the desired location on almost all surfaces, including fragile polymer thin films and hydrophobic surfaces. The method relies on a sacrificial 'self-releasing' polymer layer placed between a conventional polydimethylsiloxane elastomer stamp and the graphene that is to be transferred. This self-releasing layer provides a low work of adhesion on the stamp, which facilitates delamination of the graphene and its placement on the new substrate. To demonstrate the generality and reliability of our method, we fabricate high field-strength polymer capacitors using graphene as the top contact over a polymer dielectric thin film. These capacitors show superior dielectric breakdown characteristics compared with those made with evaporated metal top contacts. Furthermore, we fabricate low-operation-voltage organic field-effect transistors using graphene as the gate electrode placed over a thin polymer gate dielectric layer. We finally demonstrate an artificial graphite intercalation compound by stacking alternate monolayers of graphene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). This compound, which comprises graphene sheets p-doped by partial hole transfer from the F4TCNQ, shows a high and remarkably stable hole conductivity, even when heated in the presence of moisture.

Enhanced optical response of hybridized VO₂/graphene films

Application of graphene as transparent electrodes is an active research area due to its excellent electrical and optical properties. Vanadium dioxide (VO2) is an attractive material since it is a thermochromic material that undergoes a structural phase transition when heat is applied. The phase transition results in the change of electrical and optical characteristics. We report optical characteristics of hybrid materials of graphene and VO2. We observed a 12% improvement in infrared transmittance with VO2 films deposited on graphene sapphire substrates compared to that of bare sapphire substrates. We also found that the phase transition temperature decreases as the number of graphene layers on the substrates increases. In the case of VO2 films on the substrate that was coated with four layers of graphene, the mean phase transition temperature was lowered to ∼56 °C.

Graphene Films for Flexible Organic and Energy Storage Devices

Graphene and its derivatives have been the subject of extensive research in fundamental science and have viable applications in current and future technology. The exceptionally high electronic and thermal conductivity, optical transparency, and high specific surface area, combined with excellent mechanical flexibility and environmental stability leave graphene poised to be a material of the future. This perspective introduces the importance of graphene electrodes, discusses the synthesis of graphene and transfer onto desired substrates and the role of graphene in electrodes for a broad range of flexible devices such as photovoltaic, electronic, and electrochemical energy storage.

Noncovalent microcontact printing for grafting patterned polymer brushes on graphene films

This article describes a simple and universal approach to prepare patterned polymer brushes on graphene-based substrate surfaces by microcontact printing (μCP) of initiator molecules and subsequent surface initiated atom transfer radical polymerization (SI-ATRP) method. Four different initiators are designed and have strong adhesion with graphene-based substrates through noncovalent interaction. Optical and fluorescence microscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to characterize the successful polymerization of vinyl monomers on substrate surfaces. To demonstrate the broad applicability of this strategy, polymer brushes with different functionalities including cationic and anionic polyelectrolyte, thermally and pH responsive polymers, as well as polymer patterns on different graphene-based surfaces are fabricated. Binary polymer brushes can also be easily prepared by further initiating the initiator backfilled in the bare areas.

Graphene transfer: key for applications

The first micrometer-sized graphene flakes extracted from graphite demonstrated outstanding electrical, mechanical and chemical properties, but they were too small for practical applications. However, the recent advances in graphene synthesis and transfer techniques have enabled various macroscopic applications such as transparent electrodes for touch screens and light-emitting diodes (LEDs) and thin-film transistors for flexible electronics in particular. With such exciting potential, a great deal of effort has been put towards producing larger size graphene in the hopes of industrializing graphene production. Little less than a decade after the first discovery, graphene now can be synthesized up to 30 inches in its diagonal size using chemical vapour deposition methods. In making this possible, it was not only the advances in the synthesis techniques but also the transfer methods that deliver graphene onto target substrates without significant mechanical damage. In this article, the recent advancements in transferring graphene to arbitrary substrates will be extensively reviewed. The methods are categorized into mechanical exfoliation, polymer-assisted transfer, continuous transfer by roll-to-roll process, and transfer-free techniques including direct synthesis on insulating substrates.