One-dimensional CdS nanostructures: a promising candidate for optoelectronics

Zinc and cadmium thioamidate complexes: rational design of single-source precursors for the AACVD of ZnS

A series of zinc(II) thioamidate complexes [Zn{SC(iPr)NR}2]n for R = iPr (n = 2) (2), tBu (3) (n = 1), Ph (4) (n = 2) and Cy (5) (n = 2) and one cadmium(II) thioamidate complex [Cd{SC(iPr)NtBu}2]3, (6), were designed and synthesised as single-source precursors for AACVD ZnS and CdS. Solid-state structures of all four zinc(II) compounds revealed distorted tetrahedral or trigonal bipyramidal geometries, with varying tendencies for dimeric association, mediated by {Zn-S} bridging bonds. The thermogravimetric analysis identified the {tBu} derivertive, 3, as the most promising precursor based on its low decomposition onset (118 °C) and clean conversion to ZnS. This was attributed to the greater availability of β-hydrogen atoms promoting the pyrolysis mechanism. The corresponding cadmium thioamide 6 was found to crystallise as a trimetallic molecule which lacked the thermal stability to be considered viable for AACVD. Hence, 3 was used to deposit ZnS thin films by AACVD at 200-300 °C. Powder X-ray diffraction confirmed phase-pure growth of hexagonal wurtzite ZnS, with approximate crystallite sizes of 15-20 nm. Scanning electron microscopy revealed densely packed spherical nanoclusters. The morphology and crystallinity were most consistent for depositions between 250-300 °C. Energy dispersive X-ray spectroscopy indicated slightly sulfur-deficient stoichiometries.

The Zn Vacancy-Mediated De-Accumulation Based Process for Hydrogen Production Performance Promotion of 1D Zn─Cd─S Nanorods

Due to their anisotropy, 1D semiconductor nanorod-based materials have attracted much attention in the process of hydrogen production by solar energy. Nevertheless, the rational design of 1D heterojunction materials and the modulation of photo-generated electron-hole transfer paths remain a challenge. Herein, a ZnxCd1-xS@ZnS/MoS2 core-shell nanorod heterojunction is precisely constructed via in situ growth of discontinuous ZnS shell and MoS2 NCs on the Zn─Cd─S nanorods. Among them, the Zn vacancy in the ZnS shell builds the defect level, and the nanoroelded MoS2 builds the electron transport site. The optimized photocatalyst shows significant photocatalytic activity without Platinum as an auxiliary catalyst, mainly due to the new interfacial charge transfer channel constructed by the shell vacancy level, the vertical separation and the de-accumulation process of photo-generated electrons and photo-generated holes. At the same time, spectral analysis, and density functional theory (DFT) calculations fully prove that shortening difference of speed between the photogenerated electron and hole movement process is another key factor to enhance the photocatalytic performance. This study provides a new path for the kinetic design of enhanced carrier density by shortening the carrier retention time of 1D heterojunction photocatalysts with improved photocatalytic performance.

The Dissociation of Exciton During the Lasing of a Single CsPbBr3 Microplate

In this work, the lasing of a single CsPbBr₃ microplate (MP) fabricated with chemical vapor deposition (CVD) is investigated from the viewpoint of exciton dissociation characterized with steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL). It is confirmed that the lasing performance is disturbed by the dissociation of excitons. The increase of lasing threshold with temperature originates from the dissociation of free excitons (FEs) to localized carriers (LCs), and the lasing failure is mostly ascribed to the dissociation of FEs to free carriers (FCs). The working temperature of micro/nanolasers based on metal halide perovskites (MHPs) could be raised up to the temperature determined by exciton binding energy while the laser heating effect is dealt with well. These findings advance our understanding on the photophysics of the lasing behaviors of micro/nanocavities based on MHPs and help us promote their performance by having better thermal management.

Probing ultrafast hot charge carrier migration in MoS2 embedded CdS nanorods

Efficient utilization of hot charge carriers is of utmost benefit for a semiconductor-based optoelectronic device. Herein, a one-dimensional (1D)/two-dimensional (2D) heterojunction was fabricated in the form of CdS/MoS₂ nanorod/nanosheet composite and migration of hot charge carriers was being investigated with the help of transient absorption (TA) spectroscopy. The band alignment was such that both the electrons and holes in the CdS region tend to migrate into the MoS₂ region following photoexcitation. The composite system is composed of optical signatures of both CdS and MoS₂, with the dominance of CdS nanorods. In addition, the TA signal of MoS₂ is substantially enhanced in the heterosystem at the cost of the diminished CdS signal, confirming the migration of charge carrier population from CdS to MoS₂. This migration phenomenon was dominated by the hot carrier transfer. The hot carriers in the high energy states of CdS are preferentially migrated into the MoS₂ states rather than being cooled to the band edge. The hot carrier transfer time for a 400 nm pump excitation was calculated to be 0.21 ps. This is much faster than the band edge electron transfer process, occurring at 2.0 ps time scale. We found that these migration processes are very much dependent on the applied pump photon energy. Higher energy pump photons are more efficient in the hot carrier transfer process and place these hot carriers in the higher energy states of MoS₂, further extending charge carrier separation. This detailed spectroscopic investigation would help in the fabrication of better 1D/2D heterojunctions and advance the optoelectronic field.

Application of One-Dimensional Nanomaterials in Catalysis at the Single-Molecule and Single-Particle Scale

The morphology of nanomaterials has a great influence on the catalytic performance. One-dimensional (1D) nanomaterials have been widely used in the field of catalysis due to their unique linear morphology with large specific surface area, high electron-hole separation efficiency, strong light absorption capacity, plentiful exposed active sites, and so on. In this review, we summarized the recent progress of 1D nanomaterials by focusing on the applications in photocatalysis and electrocatalysis. We highlighted the advanced characterization techniques, such as scanning tunneling microscopy (STM), atomic force microscopy (AFM), surface photovoltage microscopy (SPVM), single-molecule fluorescence microscopy (SMFM), and a variety of combined characterization methods, which have been used to identify the catalytic action of active sites and reveal the mechanism of 1D nanomaterials. Finally, the challenges and future directions of the research on the catalytic mechanism of single-particle 1D nanomaterials are prospected. To our best knowledge, there is no review on the application of single-molecule or single-particle characterization technology to 1D nanomaterial catalysis at present. This review provides a systematic introduction to the frontier field and opens the way for the 1D nanomaterial catalysis.

Schottky junction devices by using bio-molecule DNA template-based one dimensional CdS-nanostructures

Creating a well-defined nanostructure through de-oxyribo nucleic acid (DNA)-nanotechnology, and specifically the development of metal/inorganic semiconductor junctions on DNA-assembled nanostructures, is an emerging research area. Herein, we investigate the electrical properties of biomolecule DNA-template based one-dimensional nanowires (NWs)-CdS/Au and without-template based nanoparticles (NPs)-CdS/Au devices grown on the Indium Tin Oxide (ITO) glass substrates. More importantly, the NWs-CdS/Au device displays a dramatic augmentation of current flow and also a striking change in threshold voltage (~55 mV) in comparison to NPs (~190 mV) and reported bulk-CdS/Au (~680 mV) devices. Albeit the manifestation of non-linear/asymmetric current-voltage (I-V) characteristic establishes the CdS/Au junction as Schottky device, but captivatingly, the large ideality factor of about 24 found in NWs-CdS/Au device could be due to the DNA-assembled based organic process CdS-semiconductor. Capacitance-voltage (C-V) measurements of the NWs-CdS/Au divulge a remarkable hump-like feature at lower frequency owing to the frequency dispersion effect. In contrast, the effect appears to be enfeebled with increasing frequency. We conjecture that the density of surface/interface traps materialises at the interface of nanostructures-CdS/metal-Au results in the changes in underlying electrical properties. The observation of significant differences in the electrical properties of DNA-assembled NWs-based Schottky junctions could possibly be helpful for the fabrication of more sophisticated and higher multispecificity biosensors for medical applications.

Dithiocarbamate Complexes as Single Source Precursors to Nanoscale Binary, Ternary and Quaternary Metal Sulfides

Nanodimensional metal sulfides are a developing class of low-cost materials with potential applications in areas as wide-ranging as energy storage, electrocatalysis, and imaging. An attractive synthetic strategy, which allows careful control over stoichiometry, is the single source precursor (SSP) approach in which well-defined molecular species containing preformed metal-sulfur bonds are heated to decomposition, either in the vapor or solution phase, resulting in facile loss of organics and formation of nanodimensional metal sulfides. By careful control of the precursor, the decomposition environment and addition of surfactants, this approach affords a range of nanocrystalline materials from a library of precursors. Dithiocarbamates (DTCs) are monoanionic chelating ligands that have been known for over a century and find applications in agriculture, medicine, and materials science. They are easily prepared from nontoxic secondary and primary amines and form stable complexes with all elements. Since pioneering work in the late 1980s, the use of DTC complexes as SSPs to a wide range of binary, ternary, and multinary sulfides has been extensively documented. This review maps these developments, from the formation of thin films, often comprised of embedded nanocrystals, to quantum dots coated with organic ligands or shelled by other metal sulfides that show high photoluminescence quantum yields, and a range of other nanomaterials in which both the phase and morphology of the nanocrystals can be engineered, allowing fine-tuning of technologically important physical properties, thus opening up a myriad of potential applications.

High efficiency organic-Si hybrid solar cells with a one-dimensional CdS interlayer

A carrier-selective passivating contact is one of the main factors for the preparation of high-efficiency solar cells. In this work, a one-dimensional nanostructured CdS material combined with quasi-metallic TiN exhibits excellent contact performance with n-Si. In addition, the introduction of the CdS nanowire interlayer is more conducive to the extraction and transmission of electrons, which is attributed to a more suitable energy level alignment between the rear contact and the n-Si absorption layer. As a result, the power conversion efficiency of organic/Si solar cells based on the CdS NW/TiN/Al electron selective passivating contact exceeds 14.0%. This shows a promising technique to achieve high-performance and low-cost photovoltaic devices.

Fabrication of CdS Nanorods on Si Pyramid Surface for Photosensitive Application

It is the first time that cadmium sulfide (CdS) nanorods have been fabricated on silicon (Si) pyramid surface by the hydrothermal reaction method. In our work, the Si pyramid morphology is able to increase the adhesion between the CdS seed layer and Si wafer. Hence, it is critical for CdS nanorods to grow successfully. During the fabrication process, the glutathione is used as the complexing agent for the formation of the CdS nanorods. By continuously adjusting the experimental conditions, the thickness of the CdS seed layer, the concentration of the glutathione, and the temperature and time of the hydrothermal reaction, the optimal condition for CdS nanorods growth on Si pyramid surface is 80 nm seed layer, 0.2-0.3 mmol glutathione, 200 °C, and 1.5 h. The Cd and S elements have a ratio of 1:1.03 from the energy-dispersive spectroscopy test, which is in agreement with the stoichiometric composition of CdS. The CdS nanorods have a bandwidth of 2.22 eV through the optical absorption spectra. The photosensitivity response test results reveal these CdS nanorods on the Si pyramid structure have an obvious photosensitive effect. From the analysis, the CdS nanorods can grow on any morphological Si surface if the adhesion between the CdS seed layer and the Si surface is strong enough.

Monitoring Transport Behavior of Charge Carriers in a Single CdS@CuS Nanowire via In Situ Single-Particle Photoluminescence Spectroscopy

Examination of the spectral and kinetic characteristics of charge carrier recombination on nanostructured semiconductors by photoluminescence (PL) plays a significant role in understanding the photocatalytic process. Here, with an in situ single-particle PL technique, we studied the transport behavior of charge carriers in individual one-dimensional (1D) core-shell structures of CdS@CuS nanowires. Through the PL intensity changes in the single-particle PL spectroscopy, effective interfacial electron transport along the interface of CdS and CuS was observed, which contributes to the significant improvement (i.e., 13.5-fold increase) of photocatalytic H₂ production compared to that for pure CdS nanowires. The present study provides visual experimental evidence for understanding restraining of charge carrier recombination in the semiconductor.

Inorganic Boron-Based Nanostructures: Synthesis, Optoelectronic Properties, and Prospective Applications

Inorganic boron-based nanostructures have great potential for field emission (FE), flexible displays, superconductors, and energy storage because of their high melting point, low density, extreme hardness, and good chemical stability. Until now, most researchers have been focused on one-dimensional (1D) boron-based nanostructures (rare-earth boride (REB₆) nanowires, boron nanowires, and nanotubes). Currently, two-dimensional (2D) borophene attracts most of the attention, due to its unique physical and chemical properties, which make it quite different from its corresponding bulk counterpart. Here, we offer a comprehensive review on the synthesis methods and optoelectronics properties of inorganic boron-based nanostructures, which are mainly concentrated on 1D rare-earth boride nanowires, boron monoelement nanowires, and nanotubes, as well as 2D borophene and borophane. This review paper is organized as follows. In Section I, the synthesis methods of inorganic boron-based nanostructures are systematically introduced. In Section II, we classify their optical and electrical transport properties (field emission, optical absorption, and photoconductive properties). In the last section, we evaluate the optoelectronic behaviors of the known inorganic boron-based nanostructures and propose their future applications.

Three-Dimensional Structure of PANI/CdS NRs-SiO₂ Hydrogel for Photocatalytic Hydrogen Evolution with High Activity and Stability

Three-dimensional PANI/CdSNRs-SiO₂ hydrogel (CdS NRs-PANI-SiO₂) was synthesized by loading polyaniline (PANI) onto the semiconductor CdS nanorods (NRs) surface and loading the binary complex on SiO₂ gel. The structure, optical properties, and electrochemical properties of the composite were studied in detail. The hydrogen production amount of CdS NRs-PANI (3%)-SiO₂ (20%) increased in comparison with CdS NRs and reached 43.25 mmol/g in 3 h under visible light. The three-dimensional structure of SiO₂ hydrogel increased the specific surface area of the catalyst, which was conducive to exposing more active sites of the catalyst. In addition, the conductive polymer PANI coated on CdS NRs played the role of conductive charge and effectively inhibited the photo-corrosion of CdS NRs. In addition, the recovery experiment showed that the recovery rate of the composite catalyst reached 90% and hydrogen production efficiency remained unchanged after five cycles, indicating that the composite catalyst had excellent stability.

Thermally oxidized CdS as a photoactive material

CdS oxidized in wide temperature range shows unique photocatalytic activity both in UV and visible light.

Erasable memory properties of spectral selectivity modulated by temperature and bias in an individual CdS nanobelt-based photodetector

Single CdS nanobelt-based photodetectors are strongly dependent on bias and temperature. They not only show a strong photoresponse to close bandgap energy light with ultrahigh responsivity of approximately 10⁷ A W^-1, large photo-to-dark current ratio of 10⁴, photoconductive gain of 10⁷, and fast response and recovery speed at a large bias of 20 V, but can also show a weak photoresponse to above- and below-bandgap energy light. Moreover, their spectral response range can show tunable selectivity to above- and below-bandgap light, which can be accurately controlled by temperature and bias. More importantly, the modulated spectral response characteristics show excellent memory behaviour after reversible writing and erasing by using temperature and bias. In nanostructures, abundant surface states and stacking fault-related traps play a vital role in the ultrahigh photoresponse to bandgap light and the erasable memory effect on spectral response range selectivity. Given the erasable memory of the spectral response selectivity with excellent photoconduction performance, the CdS NBs possess important applications in new-generation photodetection and photomemory devices.

Low-Dimensional Materials and State-of-the-Art Architectures for Infrared Photodetection

Infrared photodetectors are gaining remarkable interest due to their widespread civil and military applications. Low-dimensional materials such as quantum dots, nanowires, and two-dimensional nanolayers are extensively employed for detecting ultraviolet to infrared lights. Moreover, in conjunction with plasmonic nanostructures and plasmonic waveguides, they exhibit appealing performance for practical applications, including sub-wavelength photon confinement, high response time, and functionalities. In this review, we have discussed recent advances and challenges in the prospective infrared photodetectors fabricated by low-dimensional nanostructured materials. In general, this review systematically summarizes the state-of-the-art device architectures, major developments, and future trends in infrared photodetection.

Multifunctional CdSNPs@ZIF-8: Potential Antibacterial Agent against GFP-Expressing Escherichia coli and Staphylococcus aureus and Efficient Photocatalyst for Degradation of Methylene Blue

Multifunctional novel core-shell composites, CdSNPs@ZIF-8, have been synthesized by in situ encapsulation of different amounts of CdSNPs (150, 300, and 500 μL suspension of CdSNPs in methanol) in ZIF-8 at room temperature. These composites have been characterized by powder X-ray diffraction, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), and diffuse reflectance spectroscopy techniques and Brunauer-Emmett-Teller surface analysis. XPS and HRTEM indicate the encapsulation of CdSNPs within ZIF-8 crystal without disturbing the crystal order of ZIF-8. The average size of embedded CdSNPs (determined by the particle size distribution from HRTEM) is found to be 16.34 nm. CdSNPs@ZIF-8 showed potential to be used as an antibacterial agent against the broad spectrum of bacterial strains such as Gram-positive Staphylococcus aureus and Gram-negative green fluorescent protein-expressing Escherichia coli in aqueous medium, as evident by various biophysical experiments, viz., 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay, optical density and fluorescence spectroscopic studies, fluorescence and optical microscopic image analysis, disk diffusion assay, field emission scanning electron microscopy, and flow cytometry for reactive oxygen species induction assay. Further, the composite has been used as an efficient photocatalyst for the degradation of organic pollutants, such as methylene blue dye, in aqueous medium and found that the core-shell composite, CdSNPs@ZIF-8 (150 μL) (abbreviated as NC-1) (5 mg), exhibited higher photocatalytic activity (≈1.8 times) than CdSNPs for degradation of 90% of methylene blue (10 mL of 10 ppm) at pH ≥ 7 due to the synergetic effect. Therefore, in situ encapsulation of CdSNPs in ZIF-8 provides an easy executable measure for purification of wastewater effluents for the effective photocatalytic degradation of organic pollutants as well as to remove the bacterial contamination under sunlight.

Controlling Disorder by Electric-Field-Directed Reconfiguration of Nanowires To Tune Random Lasing

Top-down fabrication is commonly used to provide positioning control of optical structures; yet, it places stringent limitations on component materials, and oftentimes, dynamic reconfigurability is challenging to realize. Here, we present a reconfigurable nanoparticle platform that can integrate heterogeneous particle assembly of different shapes, sizes, and chemical compositions. We demonstrate dynamic control of disorder in this platform and use it to tune random laser emission characteristics for a suspension of titanium dioxide nanowires in a dye solution. Using an alternating current electric field, we control the nanowire orientation to dynamically engineer the collective scattering of the sample. Our theoretical model indicates that a change of up to 22% in scattering coefficient can be achieved for the experimentally determined nanowire length distribution upon alignment. Dependence of light confinement on anisotropic particle alignment provides a means to reversibly tune random laser characteristics; a nearly 20-fold increase in lasing intensity was observed with aligned particle orientation. We illustrate the generality of the approach by demonstrating enhanced lasing for aligned nanowires of other materials including gold, mixed gold/dielectric, and vanadium oxide.

Graphene-Based Semiconductor Heterostructures for Photodetectors

Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed.

Role of Ni2+(d8) ions in electrical, optical and magnetic properties of CdS nanowires for optoelectronic and spintronic applications

For the first time, 1D Ni ion doped CdS nanowires (NWs) were synthesized via chemical vapour deposition (CVD). The synthesized Cd_0.886Ni_0.114S NWs were single crystalline. We have reported here the investigation of optical, electrical and magnetic properties of prepared NWs for optoelectronic and spintronic applications. Successful incorporation of Ni ions in an individual CdS NW has been confirmed through several characterization tools: significantly higher angle and phonon mode shift were observed in the XRD and Raman spectra. SEM-EDX and XPS analysis also confirmed the presence of Ni²⁺ ions. Room temperature photoluminescence (RT-PL) showed multiple peaks: two emission peaks in the visible region centered at 517.1 nm (green), 579.2 nm (orange), and a broad-band near infra-red (NIR) emission centered at 759.9 nm. The first peak showed 5 nm red shift upon Ni²⁺ doping, hinting at the formation of exciton magnetic polarons (EMPs), and broad NIR emission was observed in both chlorides and bromides, which was assigned to d-d transition of Ni ions whose energy levels lying at 749.51 nm (13 342 cm^-1) and 750.98 nm (13 316 cm^-1) are very close to NIR emission. Orange emission not only remained at same peak position-its PL intensity was also significantly enhanced at 78 K; this was assigned to d-d transition (³A_2g → ¹E_g) of Ni²⁺ ions. It was observed that 11.4% Ni²⁺ ion doping enhanced the conductivity of our sample around 20 times, and saturation magnetization (M_s) increased from 7.2 × 10^-5 Am²/Kg to 1.17 × 10^-4 Am²/Kg, which shows promise for optoelectronic and spintronic applications.

A novel composite of CdS nanorods growing on a polyaniline-Cd2+ particles surface with excellent formaldehyde gas sensing properties at low temperature

A novel composite, CdS nanorods growing on a polyaniline-Cd²⁺ particles surface (CdS/PANI) with a hexagonal wurtzite structure phase, was prepared using a hydrothermal synthesis method. Methods of XRD, SEM, and FTIR were used to analyze the structure and morphology of the compounds. SEM shows that CdS/PANI consists of sea urchin-like nanorods of about 200–500 nm in length and about 50 nm in diameter. Furthermore, the FTIR spectra show that some characteristic peaks of CdS/PANI are much weaker than those of PANI and the corresponding peaks shift to a higher wavenumber. In addition, the IR stretching frequency of the Cd–S bond for CdS/PANI moved from 630 cm⁻¹ to 674 cm⁻¹. In the gas sensing experiments, the CdS/PANI-based sensor showed an excellent response to low concentration formaldehyde gas in a wide temperature range of 80–140 °C. The highest response of CdS/PANI could reach about 4.8 to 5 ppm formaldehyde gas at 120 °C. The response and recovery times of the sensor based on CdS/PANI were about 25 s and 30 s to 10 ppm formaldehyde gas, respectively.

A novel composite, CdS nanorods growing on a polyaniline-Cd²⁺ particles surface (CdS/PANI) with a hexagonal wurtzite structure phase, was prepared using a hydrothermal synthesis method.

High-Sensitive Ultraviolet Photodetectors Based on ZnO Nanorods/CdS Heterostructures

The ultraviolet (UV) photodetectors with ZnO nanorods (NRs)/CdS thin film heterostructures on glass substrates have been fabricated and characterized. It can be seen that the UV photoresponsivity of such a device became higher as the ZnO NR length was increased in the investigation. With an incident wavelength of 350 nm and 5 V applied bias, the responsivity of photodetectors based on ZnO NR/CdS heterostructures with the ZnO NR length at 500, 350, and 200 nm and traditional CdS film were at 12.86, 3.83, 0.91, and 0.75 A/W, respectively. The measurement results of the fabricated photodetectors based on ZnO nanorods (NRs)/CdS heterostructures have shown a significant high sensitivity in the range of UV light, which can be useful for the application of UV detection.

Optical and Optoelectronic Property Analysis of Nanomaterials inside Transmission Electron Microscope

In situ transmission electron microscopy (TEM) allows one to investigate nanostructures at high spatial resolution in response to external stimuli, such as heat, electrical current, mechanical force and light. This review exclusively focuses on the optical, optoelectronic and photocatalytic studies inside TEM. With the development of TEMs and specialized TEM holders that include in situ illumination and light collection optics, it is possible to perform optical spectroscopies and diverse optoelectronic experiments inside TEM with simultaneous high resolution imaging of nanostructures. Optical TEM holders combining the capability of a scanning tunneling microscopy probe have enabled nanomaterial bending/stretching and electrical measurements in tandem with illumination. Hence, deep insights into the optoelectronic property versus true structure and its dynamics could be established at the nanometer-range precision thus evaluating the suitability of a nanostructure for advanced light driven technologies. This report highlights systems for in situ illumination of TEM samples and recent research work based on the relevant methods, including nanomaterial cathodoluminescence, photoluminescence, photocatalysis, photodeposition, photoconductivity and piezophototronics.

Bottom-Up Tri-gate Transistors and Submicrosecond Photodetectors from Guided CdS Nanowalls

Tri-gate transistors offer better performance than planar transistors by exerting additional gate control over a channel from two lateral sides of semiconductor nanowalls (or "fins"). Here we report the bottom-up assembly of aligned CdS nanowalls by a simultaneous combination of horizontal catalytic vapor-liquid-solid growth and vertical facet-selective noncatalytic vapor-solid growth and their parallel integration into tri-gate transistors and photodetectors at wafer scale (cm²) without postgrowth transfer or alignment steps. These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 10⁸, 4 orders of magnitude higher than the best results ever reported for planar enhancement-mode CdS transistors. The response time of the photodetector is reduced to the submicrosecond level, 1 order of magnitude shorter than the best results ever reported for photodetectors made of bottom-up semiconductor nanostructures. Guided semiconductor nanowalls open new opportunities for high-performance 3D nanodevices assembled from the bottom up.

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I_on/I_off ratio of 4.91 × 10³, a high photoconductive gain of 1.10 × 10³, a high detectivity of 1.65 × 10¹³ Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm^-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

Short-Wave Near-Infrared Linear Dichroism of Two-Dimensional Germanium Selenide

Polarized detection has been brought into operation for optics applications in the visible band. Meanwhile, an advanced requirement in short-wave near-infrared (SW-NIR) (700-1100 nm) is proposed. Typical IV-VI chalcogenides-2D GeSe with anisotropic layered orthorhombic structure and narrow 1.1-1.2 eV band gap-potentially meets the demand. Here we report the unusual angle dependences of Raman spectra on high-quality GeSe crystals. The polarization-resolved absorption spectra (400-950 nm) and polarization-sensitive photodetectors (532, 638, and 808 nm) both exhibited well-reproducible cycles, distinct anisotropic features, and typical absorption ratios α_y/α_x ≈ 1.09 at 532 nm, 1.26 at 638 nm, and 3.02 at 808 nm (the dichroic ratio I_py/I_px ≈ 1.09 at 532 nm, 1.44 at 638 nm, 2.16 at 808 nm). Obviously, the polarized measurement for GeSe showed superior anisotropic response at around 808 nm within the SW-NIR band. Besides, the two testing methods have demonstrated the superior reliability for each other. For the layer dependence of linear dichroism, the GeSe samples with different thicknesses measured under both 638 and 808 nm lasers identify that the best results can be achieved at a moderate thickness about 8-16 nm. Overall, few-layer GeSe has capacity with the integrated SW-NIR optical applications for polarization detection.

Fully-Inorganic Trihalide Perovskite Nanocrystals: A New Research Frontier of Optoelectronic Materials

All-inorganic trihalide perovskite nanocrystals (NCs) are emerging as a new class of superstar semiconductors with excellent optoelectronic properties and great potential for a broad range of applications in lighting, lasing, photon detection, and photovoltaics. This article provides an up-to-date review on the developments of fully-inorganic trihalide perovskite NCs by emphasizing their controllable solution fabrication strategies, structural phase transformation, tunable optoelectronic properties, stability, as well as their photovoltaic and optoelectronic applications. Among the properties to be surveyed, particular focus is on the size-, shape-, and composition-dependent photoluminescence properties. Finally, by identifying new challenges, suggestions are provided for further research and potential development of this area.

Three-Dimensional Plasmonic Nanostructure Design for Boosting Photoelectrochemical Activity

Plasmonic nanostructures have been widely incorporated into different semiconductor materials to improve solar energy conversion. An important point is how to manipulate the incident light so that more light can be efficiently scattered and absorbed within the semiconductors. Here, by using a tunable three-dimensional Au pillar/truncated-pyramid (PTP) array as a plasmonic coupler, a superior optical absorption of about 95% within a wide wavelength range is demonstrated from an assembled CdS/Au PTP photoanode. Based on incident photon to current efficiency measurements and the corresponding finite difference time domain simulations, it is concluded that the enhancement is mainly attributed to an appropriate spectral complementation between surface plasmon resonance modes and photonic modes in the Au PTP structure over the operational spectrum. Because both of them are wavelength-dependent, the Au PTP profile and CdS thickness are further adjusted to take full advantage of the complementary effect, and subsequently, an angle-independent photocurrent with an enhancement of about 400% was obtained. The designed plasmonic PTP nanostructure of Au is highly robust, and it could be easily extended to other plasmonic metals equipped with semiconductor thin films for photovoltaic and photoelectrochemical cells.

Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

CdS is an important semiconductor used in optoelectronic devices. Simple techniques for growing CdS nanostructures are thus essential at a low cost. This study presents a novel method for growing single-crystal n-type CdS nanowires on p-type CdTe films by thermal annealing in an H₂S/N₂ mixed gas flow, which does not require the help of a catalyst or template. The formation process and growth mechanism of the nanowires are investigated. Well-dispersed whiskerlike CdS nanostructures are obtained at an appropriate annealing temperature and duration. We suggest that the stress-driving mechanism of nanowire formation may contribute to the growth of CdS nanowires, and that the evaporation of Te through the boundaries of the CdS grain seeds plays an important role in the sustainable growth of nanowire. In addition, CdS/CdTe heterojunction device is fabricated on Mo glass. The I-V characteristic of the heterojunction in dark shows typical rectifying diode behavior. The turn-on voltage can be regulated by annealing conditions. Meanwhile, the obvious photovoltaic effect is obtained on the in situ growth heterojunction prepared at low annealing temperature. Hence, this is a new fabricated method for CdTe-based materials in the field of energy conversion.

Hybrid solar cell on a carbon fiber

In this work, a method to assemble nanoscale hybrid solar cells in the form of a brush of radially oriented CdS nanowire crystals around a single carbon fiber is demonstrated for the first time. A solar cell was assembled on a carbon fiber with a diameter of ~5-10 μm which served as a core electrode; inorganic CdS nanowire crystals and organic dye or polymer layers were successively deposited on the carbon fiber as active components resulting in a core-shell photovoltaic structure. Polymer, dye-sensitized, and inverted solar cells have been prepared and compared with their analogues made on the flat indium-tin oxide electrode.

Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices

Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, the conventional doping method by introducing impurities into the nanostructures suffers from the low efficiency, poor reliability, and damage to the host lattices. Alternatively, surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference. SCTD is particularly useful for low-dimensional nanostructures that possess high surface area and single-crystalline structure. The high reproducibility, as well as the high spatial selectivity, makes SCTD a promising technique to construct high-performance nanodevices based on low-dimensional nanostructures. Here, recent advances of SCTD are summarized systematically and critically, focusing on its potential applications in one- and two-dimensional nanostructures. Mechanisms as well as characterization techniques for the surface charge transfer are analyzed. We also highlight the progress in the construction of novel nanoelectronic and nano-optoelectronic devices via SCTD. Finally, the challenges and future research opportunities of the SCTD method are prospected.

Effects of Liquid Medium and Ablation Wavelength on the Properties of Cadmium Sulfide Nanoparticles Formed by Pulsed-Laser Ablation

Pulsed-laser ablation in liquid (PLAL) is a green synthesis technique to obtain semiconductor nanomaterials in colloidal form. Herein, cadmium sulfide (CdS) nanoparticles were synthesized by the pulsed-laser ablation of a CdS target in different liquid media by using λ=532 and 1064 nm outputs from a pulsed (10 ns, 10 Hz) Nd:YAG laser at different ablation fluence values. The morphology, structure, crystalline phase, elemental composition, optical, and luminescent properties of CdS nanomaterials were analyzed by using transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis absorption spectroscopy, and fluorescence spectroscopy. By changing the liquid medium and ablation wavelength, CdS nanoparticles with different morphology and size were formed, as demonstrated by using TEM analysis. The crystallinity and chemical states of the ablation products were confirmed by using XRD and XPS analyses. The optical bandgap of the CdS nanoparticles was dependent on the ablation wavelength and the fluence. These nanocolloids presented different green emissions, which implied the presence of several emission centers. CdS nanocolloids in distilled water catalyzed the photocatalytic decay of methylene blue dye under light irradiation from a solar simulator.

CdS@SiO2 Core-Shell Electroluminescent Nanorod Arrays Based on a Metal-Insulator-Semiconductor Structure

Enormous advancement has been achieved in the field of one-dimensional (1D) semiconductor light-emitting devices (LEDs), however, LEDs based on 1D CdS nanostructures have been rarely reported. The fabrication of CdS@SiO₂ core-shell nanorod array LEDs based on a Au-SiO₂ -CdS metal-insulator-semiconductor (MIS) structure is presented. The MIS LEDs exhibit strong yellow emission with a low threshold voltage of 2.7 V. Electroluminescence with a broad emission ranging from 450 nm to 800 nm and a shoulder peak at 700 nm is observed, which is related to the defects and surface states of the CdS nanorods. The influence of the SiO₂ shell thickness on the electroluminescence intensity is systematically investigated. The devices have a high light-emitting spatial resolution of 1.5 μm and maintain an excellent emission property even after shelving at room temperature for at least three months. Moreover, the fabrication process is simple and cost effective and the MIS device could be fabricated on a flexible substrate, which holds great potential for application as a flexible light source. This prototype is expected to open up a new route towards the development of large-scale light-emitting devices with excellent attributes, such as high resolution, low cost, and good stability.

Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy

To develop the advanced electronic devices, the surface/interface of each component must be carefully considered. Here, we investigate the electrical properties of metal-semiconductor nanoscale junction using conductive atomic force microscopy (C-AFM). Single-crystalline CdS, CdSe, and ZnO one-dimensional nanostructures are synthesized via chemical vapor transport, and individual nanobelts (or nanowires) are used to fabricate nanojunction electrodes. The current-voltage (I -V) curves are obtained by placing a C-AFM metal (PtIr) tip as a movable contact on the nanobelt (or nanowire), and often exhibit a resistive switching behavior that is rationalized by the Schottky (high resistance state) and ohmic (low resistance state) contacts between the metal and semiconductor. We obtain the Schottky barrier height and the ideality factor through fitting analysis of the I-V curves. The present nanojunction devices exhibit a lower Schottky barrier height and a higher ideality factor than those of the bulk materials, which is consistent with the findings of previous works on nanostructures. It is shown that C-AFM is a powerful tool for characterization of the Schottky contact of conducting channels between semiconductor nanostructures and metal electrodes.