Bionic Scotopic Adaptation Transistors for Nighttime Low Illumination Imaging

Human vision excels in perceiving nighttime low illumination due to biological feedforward adaptation. Replicating this ability in biomimetic vision using solid-state devices has been highly sought after. However, emulating scotopic adaptation, entailing a confluence of efficient photoexcitation and dynamic carrier modulation, presents formidable challenges. Here, we demonstrate a low-power and bionic scotopic adaptation transistor by coupling a light-absorption layer and an electron-trapping layer at the bottom of the semiconducting channel, enabling simultaneous achievement of efficient generation of free photocarriers and adaptive carrier accumulation within a single device. This innovation empowers our transistor to exhibit sensitivity-potentiated characteristics after adaptation, detecting scotopic-level illumination (0.001 lx) with exceptional photosensitivity up to 103 at low voltages below 2 V. Moreover, we have successfully replicated diverse scotopic vision functions, encompassing time-dependent visual threshold enhancement, light intensity-dependent adaptation index, imaging contrast enhancement for nighttime low illumination imaging, opening an opportunity for artificial night vision.

Breaking Fundamental Limitation of Flow-Induced Anisotropic Growth for Large-Scale and Fast Printing of Organic Single-Crystal Films

Advanced organic electronic technologies have put forward a pressing demand for cost-effective and high-throughput fabrication of organic single-crystal films (OSCFs). However, solution-printed OSCFs are typically plagued by the existence of abundant structural defects, which pose a formidable challenge to achieving large-scale and high-performance organic electronics. Here, it is elucidated that these structural defects are mainly originated from printing flow-induced anisotropic growth, an important factor that is overlooked for too long. In light of this, a surfactant-additive printing method is proposed to effectively overcome the anisotropic growth, enabling the deposition of uniform OSCFs over the wafer scale at a high speed of 1.2 mm s-1 at room temperature. The resulting OSCF exhibits appealing performance with a high average mobility up to 10.7 cm2 V-1 s-1, which is one of the highest values for flexible organic field-effect transistor arrays. Moreover, large-scale OSCF-based flexible logic circuits, which can be bent without degradation to a radius as small as 4.0 mm and over 1000 cycles are realized. The work provides profound insights into breaking the limitation of flow-induced anisotropic growth and opens new avenues for printing large-scale organic single-crystal electronics.

Freestanding Serpentine Silicon Strips with Ultrahigh Stretchability over 300% for Wearable Electronics

Well-functionalized electronic materials, such as silicon, in a stretchable format are desirable for high-performance wearable electronics. However, obtaining Si materials that meet the required stretchability of over 100% for wearable applications remains a significant challenge. Herein, a rational design strategy is proposed to achieve freestanding serpentine Si strips (FS-Si strips) with ultrahigh stretchability, fulfilling wearable requirements. The self-supporting feature makes the strips get rid of excessive constraints from substrates and enables them to deform with the minimum strain energy. Micrometer-scale thicknesses enhance robustness, and large diameter-to-width ratios effectively reduce strain concentration. Consequently, the FS-Si strips with the optimum design could withstand 300% stretch, bending, and torsion without fracturing, even under rough manual operation. They also exhibit excellent stability and durability over 50,000 cycles of 100% stretching cycles. For wearable applications, the FS-Si strips can maintain conformal contact with the skin and have a maximum stretchability of 120%. Moreover, they are electrically insensitive to large deformations, which ensure signal stability during their daily use. Combined with mature processing techniques and the excellent semiconductor properties of Si, FS-Si strips are promising core stretchable electronic materials for wearable electronics.

A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy

A floating-gate organic field-effect transistor (FG-OFET) memory device is becoming a promising candidate for emerging non-volatile memory applications due to the advantages of its sophisticated data-storage mechanism and reliable long-term data retention capacity. However, a conventional FG-OFET memory device suffers from complex fabrication technologies and poor mechanical flexibility, which limits its practical applications. Here, we propose a facile one-step liquid-surface drag coating strategy to fabricate a layered stack of 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (Dif-TES-ADT) crystals and high-quality insulating polymer polystyrene (PS). The liquid surface enhances the spreading area of an organic solution and facilitates the unidirectional growth of organic crystals. In the bilayer-structured blend, the bottom PS polymer and the top Dif-TES-ADT semiconductor serve as a tunneling dielectric and an active memory layer of an FG-OFET memory device, respectively. Consequently, a flexible FG-OFET memory device with a large memory window of 41.4 V, a long retention time of 5000 s, and a high current ON/OFF ratio of 105 could be achieved, showing the best performance ever reported for organic thin film-based FG-OFET memory devices. In addition, multi-level data storage (3 bits per cell) can be achieved by tuning the gate voltage magnitude. Our work not only provides a general strategy for the growth of high-quality organic crystals, but also paves the way towards high-performance flexible memory devices.

Topology-Mediated Molecule Nucleation Anchoring Enables Inkjet Printing of Organic Semiconducting Single Crystals for High-Performance Printed Electronics

Printable organic semiconducting single crystals (OSSCs) offer tantalizing opportunities for next-generation wearable electronics, but their development has been plagued by a long-standing yet inherent problem─spatially uncontrolled and stochastic nucleation events─which usually causes the formation of polycrystalline films and hence limited performance. Here, we report a convenient approach to precisely manipulate the elusive molecule nucleation process for high-throughput inkjet printing of OSSCs with record-high mobility. By engineering curvature of the contact line with a teardrop-shaped micropattern, molecule nucleation is elegantly anchored at the vertex of the topological structure, enabling formation of a single nucleus for the subsequent growth of OSSCs. Using this approach, we achieve patterned growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene single crystals, yielding a breakthrough for an organic field-effect transistor array with a high average mobility of 12.5 cm2 V-1 s-1. These findings not only provide keen insights into controlling molecule nucleation kinetics but also offer opportunities for high-performance printed electronics.

Room-temperature high-speed electrical modulation of excitonic distribution in a monolayer semiconductor

Excitons in monolayer semiconductors, benefitting from their large binding energies, hold great potential towards excitonic circuits bridging nano-electronics and photonics. However, achieving room-temperature ultrafast on-chip electrical modulation of excitonic distribution and flow in monolayer semiconductors is nontrivial. Here, utilizing lateral bias, we report high-speed electrical modulation of the excitonic distribution in a monolayer semiconductor junction at room temperature. The alternating charge trapping/detrapping at the two monolayer/electrode interfaces induces a non-uniform carrier distribution, leading to controlled in-plane spatial variations of excitonic populations, and mimicking a bias-driven excitonic flow. This modulation increases with the bias amplitude and eventually saturates, relating to the energetic distribution of trap density of states. The switching time of the modulation is down to 5 ns, enabling high-speed excitonic devices. Our findings reveal the trap-assisted exciton engineering in monolayer semiconductors and offer great opportunities for future two-dimensional excitonic devices and circuits.

Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe2 Dirac Semimetal

Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant with these requirements. However, challenges remain in scalable growth and substrate-dependence for on-chip integration. Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal using a low-temperature self-stitched epitaxy (SSE) approach. The low formation energy between two precursors facilitates low-temperature multiple-point nucleation (∼300 °C), growing up, and merging, resulting in self-stitching of PdTe2 domains into a continuous film, which is highly compatible with back-end-of-line (BEOL) technology. The uncooled on-chip PdTe2/Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse of up to 10.6 μm with a large specific detectivity. Furthermore, the highly integrated device array demonstrates high-resolution room-temperature imaging capability, and the device can serve as an optical data receiver for IR optical communication. This study paves the way toward low-temperature growth of 2D semimetals for uncooled MIR sensing.

Wafer-Scale Epitaxial Growth of Two-dimensional Organic Semiconductor Single Crystals toward High-Performance Transistors

The success of state-of-the-art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single-crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice-matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single-crystal electronics. Here, an anchored crystal-seed epitaxial growth method for wafer-scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer-scale few-layer bis(triethylsilythynyl)-anthradithphene (Dif-TES-ADT) single crystal is formed, yielding a breakthrough for organic field-effect transistors with a high reliable mobility up to 8.6 cm2 V-1 s-1 and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single-crystal wafers for high-performance organic electronics.

Boosting the Performance of Organic Photodetectors with a Solution-Processed Integration Circuit toward Ubiquitous Health Monitoring

Organic photodetectors, as an emerging wearable photoplethysmographic (PPG) technology, offer exciting opportunities for next-generation photonic healthcare electronics. However, the mutual restraints among photoresponse, structure complexity, and fabrication cost have intrinsically limited the development of organic photodetectors for ubiquitous health monitoring in daily activities. Here, an effective route to dramatically boost the performance of organic photodetectors with a solution-processed integration circuit for health monitoring application is reported. Through creating an ideal metal-semiconductor junction interface that minimizes the trap states within the device, solution-printed organic field-effect transistors (OFETs) are achieved with an ultrahigh signal amplification efficiency of 37.1 S A-1 , approaching the theoretical thermionic limit. Consequently, monolithic integration of the OFET with an organic photoconductor enables the remarkable amplification of photoresponse signal-to-noise ratio by more than four orders of magnitude from 5.5 to 4.6 × 105 , which is able to meet the demand for accurately extracting physiological information from the PPG waveforms. This work offers an effective and versatile approach to greatly enhance the photodetector performance, promising to revolutionize health monitoring technologies.

High-Speed Printing of Narrow-Band-Gap Sn-Pb Perovskite Layers toward Cost-Effective Manufacturing of Optoelectronic Devices

Narrow-band-gap Sn-Pb perovskites have emerged as one of the most promising solution-processed near-infrared (NIR) light-detection technologies, with the key figure-of-merit parameters already rivaling those of commercial inorganic devices, but maximizing the cost advantage of solution-processed optoelectronic devices depends on the ability to fast-speed production. However, weak surface wettability to perovskite inks and evaporation-induced dewetting dynamics have limited the solution printing of uniform and compact perovskite films at a high speed. Here, we report a universal and effective methodology for fast printing of high-quality Sn-Pb mixed perovskite films at an unprecedented speed of 90 m h^-1 by altering the wetting and dewetting dynamics of perovskite inks with the underlying substrate. A line-structured SU-8 pattern surface to trigger spontaneous ink spreading and fight ink shrinkage is designed to achieve complete wetting with a near-zero contact angle and a uniform dragged-out liquid film. The high-speed printed Sn-Pb perovskite films have both large perovskite grains (>100 μm) and excellent optoelectronic properties, yielding highly efficient self-driven NIR photodetectors with a large voltage responsivity over 4 orders of magnitude. Finally, the potential application of the self-driven NIR photodetector in health monitoring is demonstrated. The fast printing methodology provides a new possibility to extend the manufacturing of perovskite optoelectronic devices to industrial production lines.

Narrow-bandgap Sn-Pb mixed perovskite single crystals for high-performance near-infrared photodetectors

Narrow-bandgap Sn-Pb mixed perovskite single crystals are highly promising as photoactive materials for efficient and low-cost near-infrared (NIR) photodetectors. However, because of the significant difference in the crystallization velocities for Pb- and Sn-based perovskites, Sn-Pb mixed perovskites are peculiarly prone to phase separation during the crystallization process, causing the degradation of the optical and electronic properties of materials. Herein, we propose a low-temperature space-confined technique (LT-SCT) that simultaneously reduces the crystallization velocities of pure Sn and Pb perovskites, enabling the fabrication of pure-phase (FASnI₃)_0.1(MAPbI₃)_0.9 single crystals. The resulting (FASnI₃)_0.1(MAPbI₃)_0.9 single crystals exhibit excellent crystallinity with a high hole mobility of 7.44 × 10³ cm² V^-1 s^-1 and a low surface trap density of 1.88 × 10⁹ cm^-2. These properties benefit the application of (FASnI₃)_0.1(MAPbI₃)_0.9 single crystals in self-powered NIR photodetectors and yield outstanding comprehensive performance, especially with a broad linear dynamic range of up to 163.5 dB, a large responsivity (R) of 0.53 A W^-1, and a fast response speed of 22.78 μs in the NIR spectral region (750-860 nm). Furthermore, high-quality NIR imaging and wearable health monitoring are achieved by employing high-performance and self-driven NIR photodetectors. This work contributes to developing Sn-Pb mixed perovskite single crystals and provides a promising candidate for efficient and low-cost NIR photodetection.

Strain effect on the field-effect sensing property of Si wires

Silicon-based field effect transistor (FET) sensors with high sensitivity are emerging as powerful sensors for detecting chemical/biological species. Strain engineering has been demonstrated as an effective means to improve the performance of Si-based devices. However, the strain effect on the field-effect sensing property of silicon materials has not been studied yet. Here, we investigate the strain effect on the field-effect sensing property of silicon wires by taking humidity sensing as an example. The humidity sensitivity of FET sensors based on silicon wires increases with increasing tensile strain but decreases with increasing compressive strain. The sensitivity is very responsive to strain with an enhancement factor of 67 for tensile strain. Theoretical analysis shows that the sensitivity variation under different strains is mainly attributed to the change in adsorption energy between silicon wires and water molecules. This work indicates that strain engineering can be an effective route to modulate the field-effect sensing property of Si wires for constructing highly sensitive Si-based FET sensors.

Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection

Being capable of sensing broadband infrared (IR) light is vitally important for wide-ranging applications from fundamental science to industrial purposes. Two-dimensional (2D) topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion relation. However, the low charge separation efficiency, high noise level, and on-chip integration difficulty of these semimetals significantly hinder their further technological applications. Here, we demonstrate a facile thermal-assisted tellurization route for the van der Waals (vdW) growth of wafer-scale phase-controlled 2D MoTe₂ layers. Importantly, the type-II Weyl semimetal 1T'-MoTe₂ features a unique orthorhombic lattice structure with a broken inversion symmetry, which ensures efficient carrier transportation and thus reduces the carrier recombination. This characteristic is a key merit for the well-designed 1T'-MoTe₂/Si vertical Schottky junction photodetector to achieve excellent performance with an ultrabroadband detection range of up to 10.6 µm and a large room temperature specific detectivity of over 10⁸ Jones in the mid-infrared (MIR) range. Moreover, the large-area synthesis of 2D MoTe₂ layers enables the demonstration of high-resolution uncooled MIR imaging capability by using an integrated device array. This work provides a new approach to assembling uncooled IR photodetectors based on 2D materials.

Highly Efficient Inherent Linearly Polarized Electroluminescence from Small-Molecule Organic Single Crystals

Small-molecule organic single crystals (SCs) with an inherent in-plane anisotropic nature enable direct linearly polarized light emission without the need for spatially separated polarizers and complex optical structures. However, the device performance is severely restricted by the starvation of appropriate SC emitters and the difficulty in the construction of efficient SC electroluminescence (EL) devices, leading to a low external quantum efficiency (EQE) of usually smaller than 1.5%. Here, highly efficient inherent linearly polarized light-emitting diodes (LP-LEDs) are demonstrated by exploiting 2,6-diphenylanthracene (DPA) SCs as intrinsically polarized emitters. The LP-LEDs exhibit a 2.5-fold enhanced maximum EQE of 3.38%, which approaches the theoretical limit for the DPA SC-based EL device and is the highest among organic SC-based LEDs reported thus far. More importantly, a high degree of polarization (DOP) up to 0.74 is achieved for the intrinsically polarized EL emission of the DPA SC-based LP-LEDs. By leveraging the highly efficient LP-LED, an interchip polarized optical communication system consisting of organic SCs is demonstrated for the first time. This work creates a solid foundation for the exploitation of a vast new library of small-molecule organic SCs for LP-LEDs and carries broad implications for polarized optics and relevant optoelectronic devices.

Organic Semiconductor Crystal Engineering for High-Resolution Layer-Controlled 2D Crystal Arrays

2D organic semiconductor crystals (2DOSCs) have extraordinary charge transport capability, adjustable photoelectric properties, and superior flexibility, and have stimulated continuous research interest for next-generation electronic and optoelectronic applications. The prerequisite for achieving large-area and high-throughput optoelectronic device integration is to fabricate high-resolution 2DOSC arrays. Patterned substrate- and template-assisted self-assembly is an effective strategy to fabricate OSC arrays. However, the film thickness is difficult to control due to the complicated crystallization process during solvent evaporation. Therefore, the manufacturing of 2DOSC arrays with high-resolution and controllable molecular-layer numbers through solution-based patterning methods remains a challenge. Herein, a two-step strategy to produce high-resolution layer-controlled 2DOSC arrays is reported. First, large-scale 2DOSCs with well-defined layer numbers are obtained by a solution-processed organic semiconductor crystal engineering method. Next, the high-resolution layer-controlled 2DOSC arrays are fabricated by a polydimethylsiloxane mold-assisted selective contact evaporation printing technique. The organic field-effect transistors (OFETs) based on 2DOSC arrays have high electrical performance and excellent uniformity. The 2,6-bis(4-hexylphenyl)anthracene 2DOSC arrays-based OFETs have a small variation of 12.5% in mobility. This strategy can be applied to various organic semiconductors and pattern arrays. These demonstrations will offer more opportunities for 2DOSCs for integrated optoelectronic devices.

A Fully Solution-Printed Photosynaptic Transistor Array with Ultralow Energy Consumption for Artificial-Vision Neural Networks

Photosynaptic organic field-effect transistors (OFETs) represent a viable pathway to develop bionic optoelectronics. However, the high operating voltage and current of traditional photosynaptic OFETs lead to huge energy consumption greater than that of the real biological synapses, hindering their further development in new-generation visual prosthetics and artificial perception systems. Here, a fully solution-printed photosynaptic OFET (FSP-OFET) with substantial energy consumption reduction is reported, where a source Schottky barrier is introduced to regulate charge-carrier injection, and which operates with a fundamentally different mechanism from traditional devices. The FSP-OFET not only significantly lowers the working voltage and current but also provides extraordinary neuromorphic light-perception capabilities. Consequently, the FSP-OFET successfully emulates visual nervous responses to external light stimuli with ultralow energy consumption of 0.07-34 fJ per spike in short-term plasticity and 0.41-19.87 fJ per spike in long-term plasticity, both approaching the energy efficiency of biological synapses (1-100 fJ). Moreover, an artificial optic-neural network made from an 8 × 8 FSP-OFET array on a flexible substrate shows excellent image recognition and reinforcement abilities at a low energy cost. The designed FSP-OFET offers an opportunity to realize photonic neuromorphic functionality with extremely low energy consumption dissipation.

In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio

Polarization-sensitive ultraviolet (UV) photodetection is of great technological importance for both civilian and military applications. Two-dimensional (2D) group-10 transition-metal dichalcogenides (TMDs), especially palladium diselenide (PdSe₂), are promising candidates for polarized photodetection due to their low-symmetric crystal structure. However, the lack of an efficient heterostructure severely restricts their applications in UV-polarized photodetection. Here, we develop a PdSe₂/GaN Schottky junction by in situ van der Waals growth for highly polarization-sensitive UV photodetection. Owing to the high-quality junction, the device exhibits an appealing UV detection performance in terms of a large responsivity of 249.9 mA/W, a high specific detectivity, and a fast response speed. More importantly, thanks to the puckered structure of the PdSe₂ layer, the device is highly sensitive to polarized UV light with a large dichroic ratio up to 4.5, which is among the highest for 2D TMD material-based UV polarization-sensitive photodetectors. These findings further enable the demonstration of the outstanding polarized UV imaging capability of the Schottky junction, as well as its utility as an optical receiver for secure UV optical communication. Our work offers a strategy to fabricate the PdSe₂-based heterostructure for high-performance polarization-sensitive UV photodetection.

High-Luminance Microsized CH3NH3PbBr3 Single-Crystal-Based Light-Emitting Diodes via a Facile Liquid-Insulator Bridging Route

Micro-/nanosized organic-inorganic hybrid perovskite single crystals (SCs) with appropriate thickness and high crystallinity are promising candidates for high-performance electroluminescent (EL) devices. However, their small lateral size poses a great challenge for efficient device construction and performance optimization, causing perovskite SC-based light-emitting diodes (PSC-LEDs) to demonstrate poor EL performance. Here, we develop a facile liquid-insulator bridging (LIB) strategy to fabricate high-luminance PSC-LEDs based on single-crystalline CH₃NH₃PbBr₃ microflakes. By introducing a blade-coated poly(methyl methacrylate) (PMMA) insulating layer to effectively overcome the problems of leakage current and possible short circuits between electrodes, we achieve the reliable fabrication of PSC-LEDs. The LIB method also allows us to systematically boost the device performance through crystal growth regulation and device architecture optimization. Consequently, we realize the best CH₃NH₃PbBr₃ microflake-based PSC-LED with an ultrahigh luminance of 136100 cd m^-2 and a half-lifetime of 88.2 min at an initial luminance of ∼1100 cd m^-2, which is among the highest for organic-inorganic hybrid perovskite LEDs reported to date. Moreover, we observe the strong polarized edge emission of the microflake-based PSC-LEDs with a high degree of polarization up to 0.69. Our work offers a viable approach for the development of high-performance perovskite SC-based EL devices.

Scalable Growth of Organic Single-Crystal Films via an Orientation Filter Funnel for High-Performance Transistors with Excellent Uniformity

Organic single-crystal films (OSCFs) provide an unprecedented opportunity for the development of new-generation organic single-crystal electronics. However, crystallization of organic films is normally governed by stochastic nucleation and incoherent growth, posing a formidable challenge to grow large-sized OSCFs. Here, an "orientation filter funnel" concept is presented for the scalable growth of OSCFs with well-aligned, singly orientated crystals. By rationally designing solvent wetting/dewetting patterns on the substrate, this approach can produce seed crystals with the same crystallographic orientation and then maintain epitaxial growth of these crystals, enabling the formation of large-area OSCFs. As a result, this unique concept for crystal growth not only enhances the average mobility of organic film by 4.5-fold but also improves its uniformity of electrical properties, with a low mobility variable coefficient of 9.8%, the new lowest record among organic devices. The method offers a general and scalable route to produce OSCFs toward real-word electronic applications.

Wafer-Scale Fabrication of Silicon Nanocones via Controlling Catalyst Evolution in All-Wet Metal-Assisted Chemical Etching

All-wet metal-assisted chemical etching (MACE) is a simple and low-cost method to fabricate one-dimensional Si nanostructures. However, it remains a challenge to fabricate Si nanocones (SiNCs) with this method. Here, we achieved wafer-scale fabrication of SiNC arrays through an all-wet MACE process. The key to fabricate SiNCs is to control the catalyst evolution from deposition to etching stages. Different from conventional MACE processes, large-size Ag particles by solution deposition are obtained through increasing AgNO₃ concentration or extending the reaction time in the seed solution. Then, the large-size Ag particles are simultaneously etched during the Si etching process in an etching solution with a high H₂O₂ concentration due to the accelerated cathode process and inhibited anode process in Ag/Si microscopic galvanic cells. The successive decrease of Ag particle sizes causes the proportionate increase of diameters of the etched Si nanostructures, forming SiNC arrays. The SiNC arrays exhibit a stronger light-trapping ability and better photoelectrochemical performance compared with Si nanowire arrays. SiNCs were fabricated by using n-type 1-10 Ω cm Si(100) wafers in this work. Though the specific experimental conditions for preparing SiNCs may differ when using different Si wafers, the summarized diagram will still provide valuable guidance for morphology control of Si nanostructures in MACE processes.

Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation

Broadband photodetectors are of great importance for numerous optoelectronic applications. Two-dimensional (2D) tungsten disulfide (WS₂), an important family member of transition-metal dichalcogenides (TMDs), has shown great potential for high-sensitivity photodetection due to its extraordinary properties. However, the inherent large bandgap of WS₂ and the strong interface recombination impede the actualization of high-sensitivity broadband photodetectors. Here, we demonstrate the fabrication of an ultrabroadband WS₂/Ge heterojunction photodetector through defect engineering and interface passivation. Thanks to the narrowed bandgap of WS₂ induced by the vacancy defects, the effective surface modification with an ultrathin AlO_x layer, and the well-designed vertical n-n heterojunction structure, the WS₂/AlO_x/Ge photodetector exhibits an excellent device performance in terms of a high responsivity of 634.5 mA/W, a large specific detectivity up to 4.3 × 10¹¹ Jones, and an ultrafast response speed. Significantly, the device possesses an ultrawide spectral response spanning from deep ultraviolet (200 nm) to mid-wave infrared (MWIR) of 4.6 μm, along with a superior MWIR imaging capability at room temperature. The detection range has surpassed the WS₂-based photodetectors in previous reports and is among the broadest for TMD-based photodetectors. Our work provides a strategy for the fabrication of high-performance ultrabroadband photodetectors based on 2D TMD materials.

Water-Surface Drag Coating: A New Route Toward High-Quality Conjugated Small-Molecule Thin Films with Enhanced Charge Transport Properties

Electronic properties of organic semiconductor (OSC) thin films are largely determined by their morphologies and crystallinities. However, solution-processed conjugated small-molecule OSC thin films usually exhibit abundant grain boundaries and impure grain orientations because of complex fluid dynamics during solution coating. Here, a novel methodology, water-surface drag coating, is demonstrated to fabricate high-quality OSC thin films with greatly enhanced charge transport properties. This method utilizes the water surface to alter the evaporation dynamics of solution to enlarge the grain size, and a unique drag-coating process to achieve the unidirectional growth of organic crystals. Using 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (Dif-TES-ADT) as an example, thin films with millimeter-sized single-crystal domains and pure crystallographic orientations are achieved, revealing a significant enhancement (4.7 times) of carrier mobility. More importantly, the resulting film can be directly transferred onto any desired flexible substrates, and flexible transistors based on the Dif-TES-ADT thin films show a mobility as high as 16.1 cm² V^-1 s^-1 , which represents the highest mobility value for the flexible transistors reported thus far. The method is general for the growth of various high-quality OSC thin films, thus opening up opportunities for high-performance organic flexible electronics.

Van der Waals Epitaxial Growth of Mosaic-Like 2D Platinum Ditelluride Layers for Room-Temperature Mid-Infrared Photodetection up to 10.6 µm

Mid-infrared (MIR) photodetection, covering diverse molecular vibrational regions and atmospheric transmission windows, is vital to civil and military purposes. Versatile use of MIR photodetectors is commonly dominated by HgCdTe alloys, InSb, and quantum superlattices, which are limited by strict operation demands, high-cost, and environmental toxicity. Despite the rapid advances of black phosphorus (BP)-based MIR photodetectors, these are subject to poor stability and large-area integration difficulty. Here, the van der Waals (vdW) epitaxial growth of a wafer-scale 2D platinum ditelluride (PtTe₂ ) layer is reported via a simple tellurium-vapor transformation approach. The 2D PtTe₂ layer possesses a unique mosaic-like crystal structure consisting of single-crystal domains with highly preferential [001] orientation along the normal direction, reducing the influence of interface defects and ensuring efficient out-of-plane carrier transportation. This characteristic, combined with the wide absorption of PtTe₂ and well-designed vertical device architecture, makes the PtTe₂ /Si Schottky junction photodetector capable of sensing ultra-broadband light of up to 10.6 µm with a high specific detectivity. Also, the photodetector exhibits an excellent room-temperature infrared-imaging capability. This approach provides a new design concept for high-performance, room-temperature MIR photodetection based on 2D layered materials.

Graphene-Quantum-Dots-Induced Centimeter-Sized Growth of Monolayer Organic Crystals for High-Performance Transistors

Monolayer organic crystals have attracted considerable attention due to their extraordinary optoelectronic properties. Solution self-assembly on the surface of water is an effective approach to fabricate monolayer organic crystals. However, due to the difficulties in controlling the spreading of organic solution on the water surface and the weak intermolecular interaction between the organic molecules, large-area growth of monolayer organic crystals remains a great challenge. Here, a graphene quantum dots (GQDs)-induced self-assembly method for centimeter-sized growth of monolayer organic crystals on a GQDs solution surface is reported. The spreading area of the organic solution can be readily controlled by tuning the pH value of the GQDs solution. Meanwhile, the π-π stacking interaction between the GQDs and the organic molecules can effectively reduce the nucleation energy of the organic molecules and afford a cohesive force to bond the crystals, enabling large-area growth of monolayer organic crystals. Using 2,7-didecyl benzothienobenzothiopene (C₁₀-BTBT) as an examples, centimeter-sized monolayer C₁₀-BTBT crystal with uniform molecular packing and crystal orientation is attained. Organic field-effect transistors based on the monolayer C₁₀-BTBT crystals exhibit a high mobility up to 2.6 cm² V^-1 s^-1, representing the highest mobility value for solution-assembled monolayer organic crystals. This work provides a feasible route for large-scale fabrication of monolayer organic crystals toward high-performance organic devices.

Fast deposition of an ultrathin, highly crystalline organic semiconductor film for high-performance transistors

Ultrathin organic semiconductor (OSC) crystalline films hold the promise of achieving high-performance, flexible, and transparent organic electronic devices. However, fast and high-throughput solution deposition of uniform pinhole-free ultrathin OSC crystalline films over a large area remains a challenge. Here, we demonstrate that a mixed solvent system can obviously alter the fluid flow dynamics and significantly improve the blade-coating quality of the film, enabling us to achieve a large-area continuous and smooth bis(triethylsilylethynyl)anthradithiophene (Dif-TES-ADT) ultrathin film at a fast coating speed of ∼1 mm s^-1, much superior to the 30-50 μm s^-1 for conventional methods. Also, the ultrathin, highly crystalline Dif-TES-ADT film-based organic thin-film transistors (OTFTs) exhibit a maximum mobility up to 5.54 cm² V^-1 s^-1, which is on par with the Dif-TES-ADT single crystal-based devices and among the highest for Dif-TES-ADT film-based devices. This finding should open a new route to achieve ultrathin OSC crystalline film-based high-performance flexible and transparent electronics.

Ultraminiaturized Stretchable Strain Sensors Based on Single Silicon Nanowires for Imperceptible Electronic Skins

Miniaturized stretchable strain sensors are key components in E-skins for applications such as personalized health-monitoring, body motion perception, and human-machine interfaces. However, it remains a big challenge to fabricate miniaturized stretchable strain sensors with high imperceptibility. Here, we reported for the first time novel ultraminiaturized stretchable strain sensors based on single centimeter-long silicon nanowires (cm-SiNWs). With the diameter of the active materials even smaller than that of spider silks, these sensors are highly imperceptible. They exhibit a large strain sensing range (>45%) and a high durability (>10 000 cycles). Their optimum strain sensing ranges could be modulated by controlling the prestrains of the stretchable cm-SiNWs. On the basis of this capability, sensors with appropriate sensing ranges were chosen to respectively monitor large and subtle human motions including joint motion, swallow, and touch. The strategy of applying single cm-SiNWs in stretchable sensors would open new doors to fabricate ultraminiaturized stretchable devices.

A Microchannel-Confined Crystallization Strategy Enables Blade Coating of Perovskite Single Crystal Arrays for Device Integration

Perovskite single crystals (PSCs) possess superior optoelectronic properties compared to their corresponding polycrystalline films, but their applications of PSCs in high-performance, integrated devices are hindered by their heavy thickness and difficulty in scalable deposition. Here, a microchannel-confined crystallization (MCC) strategy to grow uniform and large-area PSC arrays for integrated device applications is reported. Benefiting from the confinement effect of the microchannels, solution flow dynamics is well controlled, and thus uniform deposition of PSC arrays with suitable thickness is achieved, meaning they are applicable for scale-up device applications. The resulting PSCs possess excellent optoelectronic properties in terms of a long carrier lifetime (175 ns) and an ultralow defect density (2 × 10⁹ cm^-3 ), which are comparable to the corresponding bulk crystals. The unique embedded structure of PSCs within the microchannels allows the construction of a high-integration image sensor. This work paves the way toward high-throughput growth of PSCs for integrated optoelectronic devices.

Roles of interfaces in the ideality of organic field-effect transistors

Organic field-effect transistors (OFETs) are fundamental building blocks for flexible and large-area electronics due to their superior solution-processability, flexibility and stretchability. OFETs with high ideality are essential to their practical applications. In reality, however, many OFETs still suffer from non-ideal behaviors, such as gate-dependent mobility, which thus hinders the extraction of their intrinsic performance. It is much desired to gain a comprehensive understanding of the origins of these non-idealities. OFETs are primarily interface-related devices, and hence their performance and ideality are highly dependent on the interface properties between each device component. This review will focus on the recent progress in investigating the non-ideal behaviors of OFETs. In particular, the roles of interfaces, including the organic semiconductor (OSC)/dielectric interface, OSC/electrode interface and OSC/atmosphere interface, in determining the ideality of OFETs are summarized. Viable approaches through interface optimization to improve the device ideality are also reviewed. Finally, an overview of the outstanding challenges as well as the future development directions for the construction of ideal OFETs is given.

An ultrasensitive self-driven broadband photodetector based on a 2D-WS2/GaAs type-II Zener heterojunction

High-performance broadband photodetectors have attracted extensive research interest because of their significance in optoelectronic applications. In this study, a highly sensitive room-temperature (RT) broadband photodetector composed of a WS2/GaAs type-II van der Waals heterojunction was demonstrated, which exhibited obvious photoresponse to broadband light illumination from 200 to 1550 nm beyond the limitation of the bandgaps. Impressive device performances were achieved in terms of a low noise current of ∼59.7 pA, a high responsivity up to 527 mA W-1, an ultrahigh Ilight/Idark ratio of 107, a large specific detectivity of 1.03 × 1014 Jones, a minimum detection light intensity of 17 nW cm-2 and an external quantum efficiency (EQE) up to 80%. Transient photoresponse measurements revealed that the present detector is capable of working at a high frequency with a 3 dB cutoff frequency up to 10 kHz and a corresponding rise/fall time of 21.8/49.6 μs. Notably, this heterojunction device demonstrated Zener tunneling behaviors with a threshold voltage of -4 V. The capacitance-voltage (C-V) properties of the heterojunction were investigated to understand the device performances. In addition, the as-fabricated device can function as an image sensor with an outstanding imaging capability. Considering the above superior features, the proposed WS2/GaAs type-II van der Waals heterojunction may find great potential in high-performance broadband photodetection applications.

Theoretical Studies of Bipolar Transport in CnBTBT-FmTCNQ Donor-Acceptor Cocrystals

The development of crystals with bipolar transport characteristics is essential for high-performance organic field effect transistor (OFET) devices. In this work, we theoretically investigated the bipolar transport behaviors in C_nBTBT-F_mTCNQ cocrystals. It is found that bipolar transport can be realized in C₈BTBT-TCNQ and C₁₂BTBT-TCNQ cocrystals with room-temperature electron/hole mobility up to 1.8/0.75 and 2.5/1.8 cm² V^-1 s^-1, respectively. The comparable electron- and hole-transfer integrals between the nearest-neighbor molecule pairs as well as the small hole reorganization energy of the TCNQ molecule are responsible for the balanced electron and hole mobilities. Moreover, because of the π-π stacking between neighboring molecules, all cocrystals show strong anisotropic transport characteristic for both electron and hole transport with the mobility along the π-π stacking direction much larger than those along the other two directions. This work provides the possibility of high-performance OFET engineering and also enriches the OFET families with bipolar transport characteristics.

Precise Positioning of Organic Semiconductor Single Crystals with Two-Component Aligned Structure through 3D Wettability-Induced Sequential Assembly

Highly ordered organic semiconductor single-crystal (OSSC) arrays are ideal building blocks for functional organic devices. However, most of the current methods are only applicable to fabricate OSSC arrays of a single component, which significantly hinders the application of OSSC arrays in integrated organic circuits. Here, we present a universal approach, termed three-dimensional (3D) wettability-induced sequential assembly that can programmatically and progressively manipulate the crystallization locations of different organic semiconductors at the same spatial position using a 3D microchannel template, for the fabrication of the two-component OSSC arrays. As an example, we successfully prepared two-component, bilayer structured OSSC arrays consisting of n-type N,N'-bis(2-phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide and p-type 6,13-bis(triisopropylsilylethynyl)pentacene microbelts. The bicomponent OSSCs show ambipolar carrier transport properties with hole and electron mobilities of 0.342 and 0.526 cm² V^-1 s^-1, respectively. Construction of complementary inverters is further demonstrated based on the two-component OSSCs. The capability of integration of multicomponent OSSC arrays opens up unique opportunities for future high-performance organic complementary circuits.

Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction

Polarization-sensitive photodetection in a broad spectrum range is highly desired due to the great significance in military and civilian applications. Palladium diselenide (PdSe₂), a newly explored air-stable, group 10 two-dimensional (2D) noble metal dichalcogenide with a puckered pentagonal structure, holds promise for polarization-sensitive photodetection. Herein, we report a highly polarization-sensitive, broadband, self-powered photodetector based on graphene/PdSe₂/germanium heterojunction. Owing to the enhanced light absorption of the mixed-dimensional van der Waals heterojunction and the effective carrier collection with graphene transparent electrode, the photodetector exhibits superior device performance in terms of a large photoresponsivity, a high specific detectivity, a fast response speed to follow nanosecond pulsed light signal, and a broadband photosensitivity ranging from deep ultraviolet (DUV) to mid-infrared (MIR). Significantly, highly polarization-sensitive broadband photodetection with an ultrahigh polarization sensitivity of 112.2 is achieved, which represents the best result for 2D layered material-based photodetectors. Further, we demonstrated the high-resolution polarization imaging based on the heterojunction device. This work reveals the great potential of 2D PdSe₂ for high-performance, air-stable, and polarization-sensitive broadband photodetectors.

High-Performance Nanofloating Gate Memory Based on Lead Halide Perovskite Nanocrystals

Lead halide perovskites have been extensively investigated in a host of optoelectronic devices, such as solar cells, light-emitting diodes, and photodetectors. The halogen vacancy defects arising from the halogen-poor growth environment are normally regarded as an unfavorable factor to restrict the device performance. Here, for the first time, we demonstrate the utilization of the vacancy defects in lead halide perovskite nanostructures for achieving high-performance nanofloating gate memories (NFGMs). CH₃NH₃PbBr₃ nanocrystals (NCs) were uniformly decorated on the CdS nanoribbon (NR) surface via a facile dip-coating process, forming a CdS NR/CH₃NH₃PbBr₃ NC core-shell structure. Significantly, owing to the existence of sufficient carrier trapping states in CH₃NH₃PbBr₃ NCs, the hybrid device possessed an ultralarge memory window up to 77.4 V, a long retention time of 12 000 s, a high current ON/OFF ratio of 7 × 10⁷, and a long-term air stability for 50 days. The memory window of the device is among the highest for the low-dimensional nanostructure-based NFGMs. Also, this strategy shows good universality and can be extended to other perovskite nanostructures for the construction of high-performance NFGMs. This work paves the way toward the fabrication of new-generation, high-capacity nonvolatile memories using lead halide perovskite nanostructures.

Precise Patterning of Organic Semiconductor Crystals for Integrated Device Applications

Development of high-performance organic electronic and optoelectronic devices relies on high-quality semiconducting crystals that have outstanding charge transport properties and long exciton diffusion length and lifetime. To achieve integrated device applications, it is a prerequisite to precisely locate the organic semiconductor crystals (OSCCs) to form a specifically patterned structure. Well-patterned OSCCs can not only reduce leakage current and cross-talk between neighboring devices, but also facilely integrate with other device elements and their corresponding interconnects. In this Review, general strategies for the patterning of OSCCs are summarized, and the advantages and limitations of different patterning methods are discussed. Discussion is focused on an advanced strategy for the high-resolution and wafer-scale patterning of OSCC by a surface microstructure-assisted patterning method. Furthermore, the recent progress on OSCC pattern-based integrated circuities is highlighted. Finally, the research challenges and directions of this young field are also presented.

Dual-Band, High-Performance Phototransistors from Hybrid Perovskite and Organic Crystal Array for Secure Communication Applications

High-performance phototransistors made from organic semiconductor single crystals (OSSCs) have attracted much attention due to the high responsivity and solution-processing capability of OSSCs. However, OSSC-based phototransistors capable of dual-band spectral response remain a difficult challenge to achieve because organic semiconductors usually possess only narrow single-band absorption. Here, we report the fabrication of high-performance, dual-band phototransistors from a hybrid structure of a 2,7-dioctyl[1]benzothieno[3,2- b][1]benzothiophene (C8-BTBT) single-crystal array coated with CH₃NH₃PbI₃ nanoparticles (NPs) synthesized by a simple, one-step solution method. In contrast to C8-BTBT and CH₃NH₃PbI₃ NPs with respective absorption in the ultraviolet (UV) and visible (vis) region, their hybrid structure shows broad absorption covering the entire UV-vis range. The hybrid-based phototransistors exhibit an ultrahigh responsivity of >1.72 × 10⁴ A/W in the 252-780 nm region, which represents the best performance for solution-processing, broadband photodetectors. Moreover, integrated phototransistor circuitries from the hybrid CH₃NH₃PbI₃ NPs/C8-BTBT single-crystal array show applications for high-security communication.

Solution-Processed 3D RGO-MoS2 /Pyramid Si Heterojunction for Ultrahigh Detectivity and Ultra-Broadband Photodetection

Molybdenum disulfide (MoS₂ ), a typical 2D metal dichalcogenide (2DMD), has exhibited tremendous potential in optoelectronic device applications, especially in photodetection. However, due to the weak light absorption of planar mono-/multilayers, limited cutoff wavelength edge, and lack of high-quality junctions, most reported MoS₂ -based photodetectors show undesirable performance. Here, a structurized 3D heterojunction of RGO-MoS₂ /pyramid Si is demonstrated via a simple solution-processing method. Owing to the improved light absorption by the pyramid structure, the narrowed bandgap of the MoS₂ by the imperfect crystallinity, and the enhanced charge separation/transportation by the inserted reduced graphene oxide (RGO), the assembled photodetector exhibits excellent performance in terms of a large responsivity of 21.8 A W^-1 , extremely high detectivity up to 3.8 × 10¹⁵ Jones (Jones = cm Hz^1/2 W^-1 ) and ultrabroad spectrum response ranging from 350 nm (ultraviolet) to 4.3 µm (midwave infrared). These device parameters represent the best results for MoS₂ -based self-driven photodetectors, and the detectivity value sets a new record for the 2DMD-based photodetectors reported thus far. Prospectively, the design of novel 3D heterojunction can be extended to other 2DMDs, opening up the opportunities for a host of high-performance optoelectronic devices.

Precise Patterning of Laterally Stacked Organic Microbelt Heterojunction Arrays by Surface-Energy-Controlled Stepwise Crystallization for Ambipolar Organic Field-Effect Transistors

Ambipolar organic field-effect transistors (OFETs) combining single-crystalline p- and n-type organic micro/nanocrystals have demonstrated superior performance to their amorphous or polycrystalline thin-film counterparts. However, large-area alignment and precise patterning of organic micro/nanocrystals for ambipolar OFETs remain challenges. Here, a surface-energy-controlled stepwise crystallization (SECSC) method is reported for large-scale, aligned, and precise patterning of single-crystalline laterally stacked p-n heterojunction microbelt (MB) arrays. In this method, the p- and n-type organic crystals are precipitated via a stepwise process: first, the lateral sides of prepatterned photoresist stripes provide high-surface-energy sites to guide the aligned growth of p-type organic crystals. Next, the formed p-type crystals serve as new high-surface-energy positions to induce the crystallization of n-type organic molecules at their sides, thus leading to the formation of laterally stacked p-n microbelts. Ambipolar OFETs based on the p-n heterojunction MB arrays exhibit balanced hole and electron mobilities of 0.32 and 0.43 cm2 V-1 s-1 , respectively, enabling the fabrication of complementary-like inverters with large voltage gains. This work paves the way toward rational design and construction of single-crystalline organic p-n heterojunction arrays for high-performance organic, integrated circuits.

Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage

Fabrication and application of hybrid functional circuits have become a hot research topic in the field of printed electronics. In this study, a novel flexible diode-transistor logic (DTL) driving circuit is proposed, which was fabricated based on a light emitting diode (LED) integrated with printed high-performance single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs). The LED, which is made of AlGaInP on GaAs, is commercial off-the-shelf, which could generate free electrical charges upon white light illumination. Printed top-gate TFTs were made on a PET substrate by inkjet printing high purity semiconducting SWCNTs (sc-SWCNTs) ink as the semiconductor channel materials, together with printed silver ink as the top-gate electrode and printed poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA/ODA) as gate dielectric layer. The LED, which is connected to the gate electrode of the TFT, generated electrical charge when illuminated, resulting in biased gate voltage to control the TFT from "ON" status to "OFF" status. The TFTs with a PMDA/ODA gate dielectric exhibited low operating voltages of ±1 V, a small subthreshold swing of 62-105 mV dec^-1 and ON/OFF ratio of 10⁶, which enabled DTL driving circuits to have high ON currents, high dark-to-bright current ratios (up to 10⁵) and good stability under repeated white light illumination. As an application, the flexible DTL driving circuit was connected to external quantum dot LEDs (QLEDs), demonstrating its ability to drive and to control the QLED.

Large-Scale Fabrication of Silicon Nanowires for Solar Energy Applications

The development of silicon (Si) materials during past decades has boosted up the prosperity of the modern semiconductor industry. In comparison with the bulk-Si materials, Si nanowires (SiNWs) possess superior structural, optical, and electrical properties and have attracted increasing attention in solar energy applications. To achieve the practical applications of SiNWs, both large-scale synthesis of SiNWs at low cost and rational design of energy conversion devices with high efficiency are the prerequisite. This review focuses on the recent progresses in large-scale production of SiNWs, as well as the construction of high-efficiency SiNW-based solar energy conversion devices, including photovoltaic devices and photo-electrochemical cells. Finally, the outlook and challenges in this emerging field are presented.

Precise Patterning of Organic Single Crystals via Capillary-Assisted Alternating-Electric Field

Owing to the extraordinary properties, organic micro/nanocrystals are important building blocks for future low-cost and high-performance organic electronic devices. However, integrated device application of the organic micro/nanocrystals is hampered by the difficulty in high-throughput, high-precision patterning of the micro/nanocrystals. In this study, the authors demonstrate, for the first time, a facile capillary-assisted alternating-electric field method for the large-scale assembling and patterning of both 0D and 1D organic crystals. These crystals can be precisely patterned at the photolithography defined holes/channels at the substrate with the yield up to 95% in 1 mm² . The mechanism of assembly kinetics is systematically studied by the electric field distribution simulation and experimental investigations. By using the strategy, various organic micro/nanocrystal patterns are obtained by simply altering the geometries of the photoresist patterns on substrates. Moreover, ultraviolet photodetectors based on the patterned Alq3 micro/nanocrystals exhibit visible-blind photoresponse with high sensitivity as well as excellent stability and reproducibility. This work paves the way toward high-integration, high-performance organic electronic, and optoelectronic devices from the organic micro/nanocrystals.

Ultrahigh-Responsivity Photodetectors from Perovskite Nanowire Arrays for Sequentially Tunable Spectral Measurement

Compared with polycrystalline films, single-crystalline methylammonium lead halide (MAPbX₃, X = halogen) perovskite nanowires (NWs) with well-defined structure possess superior optoelectronic properties for optoelectronic applications. However, most of the prepared perovskite NWs exhibit properties below expectations due to poor crystalline quality and rough surfaces. It also remains a challenge to achieve aligned growth of single-crystalline perovskite NWs for integrated device applications. Here, we report a facile fluid-guided antisolvent vapor-assisted crystallization (FGAVC) method for large-scale fabrication of high-quality single-crystalline MAPb(I_1-xBr_x)₃ (x = 0, 0.1, 0.2, 0.3, 0.4) NW arrays. The resultant perovskite NWs showed smooth surfaces due to slow crystallization process and moisture-isolated growth environment. Significantly, photodetectors made from the NW arrays exhibited outstanding performance in respect of ultrahigh responsivity of 12 500 A W^-1, broad linear dynamic rang (LDR) of 150 dB, and robust stability. The responsivity represents the best value ever reported for perovskite-based photodetectors. Moreover, the spectral response of the MAPb(I_1-xBr_x)₃ NW arrays could be sequentially tuned by varying the content of x = 0-0.4. On the basis of this feature, the NW arrays were monolithically integrated to form a unique system for directly measuring light wavelength. Our work would open a new avenue for the fabrication of high-performance, integrated optoelectronic devices from the perovskite NW arrays.

Metal Acetylacetonate Series in Interface Engineering for Full Low-Temperature-Processed, High-Performance, and Stable Planar Perovskite Solar Cells with Conversion Efficiency over 16% on 1 cm2 Scale

A series of metal acetylacetonates produced by a full low-temperature (below 100 °C) process are successfully employed to obtain both "multistable" and high-performance planar-inverted perovskite solar cells. All the three kinds of champion cells in small area exhibit over 18% in conversion-efficiency with negligible hysteresis, along with a conversion efficiency above 16% for planar PSCs in an aperture area of over 1 cm² .

Efficient and Stable Silicon Photocathodes Coated with Vertically Standing Nano-MoS2 Films for Solar Hydrogen Production

Water splitting in a photoelectrochemical cell, which converts sunlight into hydrogen energy, has recently received intense research. Silicon is suitable as a viable light-harvesting material for constructing such cell; however, there is a need to improve its stability and explore a cheap and efficient cocatalyst. Here we fabricate highly efficient and stable photocathodes by integrating crystalline MoS₂ catalyst with ∼2 nm Al₂O₃ protected n⁺p-Si. Al₂O₃ acts as a protective and passivative layer of the Si surface, while the sputtering method using a MoS₂ target along with a postannealing leads to a vertically standing, conformal, and crystalline nano-MoS₂ layer on Al₂O₃/n⁺p-Si photocathode. Efficient (0.4 V vs RHE onset potential and 35.6 mA/cm² saturated photocurrent measured under 100 mA/cm² Xe lamp illumination) and stable (above 120 h continuous water splitting) photocathode was obtained, which opens the door for the MoS₂ catalyst to be applied in photoelectrochemical hydrogen evolution in a facile and scalable way.

Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving

ABSTRACT

Organic field-effect transistors (OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm² V^-1 s^-1, demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene (BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 × 10 cm² wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed. By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm² V^-1 s^-1 (average mobility 1.2 cm² V^-1 s^-1) and 3.0 cm² V^-1 s^-1 (average mobility 2.0 cm² V^-1 s^-1), respectively. They both have a high on/off ratio (I _on/I _off) > 10⁹. The performance can well satisfy the requirements for light-emitting diodes driving.

Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices

Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, the conventional doping method by introducing impurities into the nanostructures suffers from the low efficiency, poor reliability, and damage to the host lattices. Alternatively, surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference. SCTD is particularly useful for low-dimensional nanostructures that possess high surface area and single-crystalline structure. The high reproducibility, as well as the high spatial selectivity, makes SCTD a promising technique to construct high-performance nanodevices based on low-dimensional nanostructures. Here, recent advances of SCTD are summarized systematically and critically, focusing on its potential applications in one- and two-dimensional nanostructures. Mechanisms as well as characterization techniques for the surface charge transfer are analyzed. We also highlight the progress in the construction of novel nanoelectronic and nano-optoelectronic devices via SCTD. Finally, the challenges and future research opportunities of the SCTD method are prospected.

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II-VI Nanostructures

Wide band gap II-VI nanostructures are important building blocks for new-generation electronic and optoelectronic devices. However, the difficulty of realizing p-type conductivity in these materials via conventional doping methods has severely handicapped the fabrication of p-n homojunctions and complementary circuits, which are the fundamental components for high-performance devices. Herein, by using first-principles density functional theory calculations, we demonstrated a simple yet efficient way to achieve controlled p-type doping on II-VI nanostructures via surface charge transfer doping (SCTD) using high work function transition metal oxides such as MoO₃, WO₃, CrO₃, and V₂O₅ as dopants. Our calculations revealed that these oxides were capable of drawing electrons from II-VI nanostructures, leading to accumulation of positive charges (holes injection) in the II-VI nanostructures. As a result, Fermi levels of the II-VI nanostructures were shifted toward the valence band regions after surface modifications, along with the large enhancement of work functions. In situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy characterizations verified the significant interfacial charge transfer between II-VI nanostructures and surface dopants. Both theoretical calculations and electrical transfer measurements on the II-VI nanostructure-based field-effect transistors clearly showed the p-type conductivity of the nanostructures after surface modifications. Strikingly, II-VI nanowires could undergo semiconductor-to-metal transition by further increasing the SCTD level. SCTD offers the possibility to create a variety of electronic and optoelectronic devices from the II-VI nanostructures via realization of complementary doping.