Simultaneous enhancement of brightness, efficiency, and switching in RGB organic light emitting transistors

Nanostructured Channel for Improving Emission Efficiency of Hybrid Light-Emitting Field-Effect Transistors

We report on the mechanism of enhancing the luminance and external quantum efficiency (EQE) by developing nanostructured channels in hybrid (organic/inorganic) light-emitting transistors (HLETs) that combine a solution-processed oxide and a polymer heterostructure. The heterostructure comprised two parts: (i) the zinc tin oxide/zinc oxide (ZTO/ZnO), with and without ZnO nanowires (NWs) grown on the top of the ZTO/ZnO stack, as the charge transport layer and (ii) a polymer Super Yellow (SY, also known as PDY-132) layer as the light-emitting layer. Device characterization shows that using NWs significantly improves luminance and EQE (≈1.1% @ 5000 cd m-2) compared to previously reported similar HLET devices that show EQE < 1%. The size and shape of the NWs were controlled through solution concentration and growth time, which also render NWs to have higher crystallinity. Notably, the size of the NWs was found to provide higher escape efficiency for emitted photons while offering lower contact resistance for charge injection, which resulted in the improved optical performance of HLETs. These results represent a significant step forward in enabling efficient and all-solution-processed HLET technology for lighting and display applications.

Nonvolatile Memory Organic Light-Emitting Transistors

In the field of active-matrix organic light emitting display (AMOLED), large-size and ultra-high-definition AMOLED applications have escalated the demand for the integration density of driver chips. However, as Moore's Law approaches the limit, the traditional technology of improving integration density that relies on scaling down device dimension is facing a huge challenge. Thus, developing a multifunctional and highly integrated device is a promising route for improving the integration density of pixel circuits. Here, a novel nonvolatile memory ferroelectric organic light-emitting transistor (Fe-OLET) device which integrates the switching capability, light-emitting capability and nonvolatile memory function into a single device is reported. The nonvolatile memory function of Fe-OLET is achieved through the remnant polarization property of ferroelectric polymer, enabling the device to maintain light emission at zero gate bias. The reliable nonvolatile memory operations are also demonstrated. The proof-of-concept device optimized through interfacial modification approach exhibits 20 times improved field-effect mobility and five times increased luminance. The integration of nonvolatile memory, switching and light-emitting capabilities within Fe-OLET provides a promising internal-storage-driving paradigm, thus creating a new pathway for deploying storage capacitor-free circuitry to improve the pixel aperture ratio and the integration density of circuits toward the on-chip advanced display applications.

Achieving Bright Organic Light-Emitting Field-Effect Transistors with Sustained Efficiency through Hybrid Contact Design

Organic light-emitting field-effect transistors (OLEFETs) with bilayer structures have been widely studied due to their potential to integrate high-mobility organic transistors and efficient organic light-emitting diodes. However, these devices face a major challenge of imbalance charge transport, leading to a severe efficiency roll-off at high brightness. Here, we propose a solution to this challenge by introducing a transparent organic/inorganic hybrid contact with specially designed electronic structures. Our design aims to steadily accumulate the electrons injected into the emissive polymer, allowing the light-emitting interface to effectively capture more holes even when the hole current increases. Our numerical simulations show that the capture efficiency of these steady electrons will dominate charge recombination and lead to a sustained external quantum efficiency of 0.23% over 3 orders of magnitude of brightness (4 to 7700 cd/m²) and current density (1.2 to 2700 mA/cm²) from -4 to -100 V. The same enhancement is retained even after increasing the external quantum efficiency (EQE) to 0.51%. The high and tunable brightness with stable efficiency offered by hybrid-contact OLEFETs makes them ideal light-emitting devices for various applications. These devices have the potential to revolutionize the field of organic electronics by overcoming the fundamental challenge of imbalance charge transport.

Van der Waals Multilayer Heterojunction for Low-Voltage Organic RGB Area-Emitting Transistor Array

Organic light-emitting transistors (OLETs) have garnered considerable attention from academy and industry due to their potential applications in next-generation display technologies, multifunctional devices, and organic electrically pumped lasers. However, overcoming the trade-offs among power consumption, external quantum efficiency (EQE), and uniform area emission remains a long-standing issue for OLETs. Herein, a van der Waals multilayer heterojunction methodology is proposed to enhance the layer-to-layer interfacial interaction and contact, resulting in better dipole shielding, carrier transport, exciton recombination, and current density distribution. The prepared multilayer heterojunction OLET (MLH-OLET) array shows uniform and bright RGB area emission and low operating voltage (<30 V among the lowest applied voltage of reported lateral LETs). Additionally, a high brightness under area emission of 1060 cd m^-2 , a high EQE value of 0.85%, and a high loop stability (over 380 cycles, outperforming state-of-the-art OLETs) indicate that the proposed multilayer heterojunction is obviously superior to the reported lateral device configuration. The van der Waals multilayer heterojunction developed for the preparation of OLET arrays sufficiently meets the low-voltage, high-performance, and low-cost requirements of future display technologies.

New semi-ladder polymers for ambipolar organic light-emitting transistors

Organic light-emitting transistors (OLETs) combine the light-emitting and gate-modulated electrical switching functions in a single device. Over the past two decades, progress has been made in developing new fluorescent semiconductors and device engineering to improve the properties of OLETs. In this paper, we give a brief review of the achievement and disadvantages of the present polymer-based OLETs, while highlighting the recent developments in semi-ladder polymers from our lab for new electroluminescent materials. The special folded molecular structures and unique aggregation states make these polymers suitable for exploration as OLET materials. A short conclusion is provided with a discussion on the challenges and future perspectives in this field.

Improving the Performance of Red Organic Light-Emitting Transistors by Utilizing a High-k Organic/Inorganic Bilayer Dielectric

Integration of electrical switching and light emission in a single unit makes organic light-emitting transistors (OLETs) highly promising multifunctional devices for next-generation active-matrix flat-panel displays and related applications. Here, high-performance red OLETs are fabricated in a multilayer configuration that incorporates a zirconia (ZrO_x)/cross-linked poly(vinyl alcohol) (C-PVA) bilayer as a dielectric. The developed organic/inorganic bilayer dielectric renders high dielectric constant as well as improved dielectric/semiconductor interface quality, contributing to enhanced carrier mobility and high current density. In addition, an efficient red phosphorescent organic emitter doped in a bihost system is employed as the emitting layer for an effective exciton formation and light generation. Consequently, our optimized red OLETs displayed a high brightness of 16 470 cd m^-2 and a peak external quantum efficiency of 11.9% under a low gate and source-drain voltage of -24 V. To further boost the device performance, an electron-blocking layer is introduced for ameliorated charge-carrier balance and hence suppressed exciton-charge quenching, which resulted in an improved maximum brightness of 20 030 cd m^-2. We anticipate that the new device optimization approaches proposed in this work would spur further development of efficient OLETs with high brightness and curtailed efficiency roll-off.

Redistributed Current Density in Lateral Organic Light-Emitting Transistors Enabling Uniform Area Emission with Good Stability and Arbitrary Tunability

Organic light-emitting transistors (OLETs), integrating the functions of an organic field-effect transistor (OFET) and organic light-emitting diode (OLED) in a single device, are promising for the next-generation display technology. However, the great challenge of achieving uniform area emission in OLETs with good stability and arbitrary tunability hinders their development in this field. Herein, an effective solution to obtain well-defined area emission in lateral OLETs by incorporating a charge-transport buffer (CTB) layer between the conducting channel and emitting layer is proposed. Comprehensive theoretical simulation and experimental results demonstrate redistributed potential beneath the drain electrode under the shielding effect of the CBT layer, resulting in a highly uniform current density. In this case, uniform recombination of balanced holes and electrons can be guaranteed, which is essential for the formation of area emission in the following OLETs. RGB OLETs with uniform area emission are constructed, which show good gate tunable ability (ON/OFF ratio 10⁶ ), high loop stability (over 200 cycles) and high aperture ratio (over 80%) due to the arbitrary tunability of the device geometry. This work provides a new avenue for constructing area-emission lateral OLETs, which have great potential for display technology because of their good compatibility with conventional fabrication techniques.

High Mobility Organic Lasing Semiconductor with Crystallization-Enhanced Emission for Light-Emitting Transistors

The development of high mobility organic laser semiconductors with strong emission is of great scientific and technical importance, but challenging. Herein, we present a high mobility organic laser semiconductor, 2,7-diphenyl-9H-fluorene (LD-1) showing unique crystallization-enhanced emission guided by elaborately modulating its crystal growth process. The obtained one-dimensional nanowires of LD-1 show outstanding integrated properties including: high absolute photoluminescence quantum yield (PLQY) approaching 80 %, high charge carrier mobility of 0.08 cm²  V^-1  s^-1 , Fabry-Perot lasing characters with a low threshold of 86 μJ cm^-2 and a high-quality factor of ≈2400. Furthermore, electrically induced emission was obtained from an individual LD-1 crystal nanowire-based light-emitting transistor due to the recombination of holes and electrons simultaneously injected into the nanowire, which provides a good platform for the study of electrically pumped organic lasers and other related ultrasmall integrated electrical-driven photonic devices.

Organic Light-Emitting Transistors Entering a New Development Stage

Organic light-emitting transistors (OLETs) are possibly the smallest integrated optoelectronic devices that combine the switching and amplification mechanisms of organic field-effect transistors (OFETs) and the electroluminescent characteristic of organic light-emitting diodes (OLEDs). Such a unique architecture of OLETs makes them ideal for developing the next-generation display technology and electrically pumped lasers for miniaturized photonic devices and circuits. However, the development of OLETs has been slow. Recently, some exciting progress has been made with breakthroughs in high mobility emissive organic semiconductors, construction of high-performance OLETs, and fabrication of novel multifunctional OLETs. This recent slew of advances may represent the advent of a new development stage of OLETs and their related devices and circuits. In this paper, a detailed review of these fantastic advances is presented, with a special focus on the key points for developing high-performance OLETs. Finally, a brief conclusion is provided with a discussion on the challenges and future perspectives in this field.

Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)

Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.

Synergy between Photoluminescence and Charge Transport Achieved by Finely Tuning Polymeric Backbones for Efficient Light-Emitting Transistor

The lack of design principle for developing high-performance polymer materials displaying strong fluorescence and high ambipolar charge mobilities limited their performance in organic light-emitting transistors (OLETs), electrically pumped organic laser, and other advanced electronic devices. A series of semiladder polymers by copolymerization of weak acceptors (TPTQ or TPTI) and weak donors (fluorene (F) or carbazole (C)) have been developed for luminescent and charge transporting properties. It was found that enhanced planarity, high crystallinity, and a delicate balance in interchain aggregation obtained in the new copolymer, TPTQ-F, contributed to high ambipolar charge mobilities and photoluminescent quantum yield. TPTQ-F showed excellent performance in solution-processed multilayered OLET devices with an external quantum efficiency (EQE) of 5.3%.

Recent Advances in Multi-Layer Light-Emitting Heterostructure Transistors

Light-emitting transistors (LETs) have attracted tremendous academic and industrial interest due to their dual functions of electrical switching and light emission in a single device, which can considerably reduce system complexity and manufacturing costs, especially in the area of flat panel and flexible displays as well as lighting and lasers. In recent years, enhanced LET performance has been achieved by introducing multiple-layer heterostructures in the charge-carrying/light-emitting LET channel versus the best-reported performance in single active layer LETs, rendering multi-layer LETs promising candidates for next-generation display technologies. In this review, the fundamental structures and working principles of multi-layer heterostructure LETs are introduced. Next, developments in multi-layer LETs are discussed based on co-planar LETs, non-planar LETs, and vertical LETs including organic, quantum dot, and perovskite light emitters. Finally, this review concludes with a summary and a perspective on the future of this research field.

Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm² V⁻¹ s⁻¹ and EQE of 1.6% at a luminance of 2600 cd m⁻². Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

Electrochemiluminescent Transistors: A New Strategy toward Light-Emitting Switching Devices

Light-emitting transistors (LETs) have attracted a significant amount of interest as multifunctional building blocks for next-generation electronics and optoelectronic devices. However, it is challenging to obtain LETs with a high carrier mobility and uniform light-emission because the semiconductor channel should provide both the electrical charge transport and optical light-emission, and typical emissive semiconductors have low, imbalanced carrier mobilities. In this work, a novel device platform that adapts the electrochemiluminescence (ECL) principle in LETs, referred to as an ECL transistor (ECLT) is proposed. ECL is a light-emission phenomenon from electrochemically excited luminophores generated by redox reactions. A solid-state ECL electrolyte consisting of a network-forming polymer, ionic liquid, luminophore, and co-reactant is employed as the light-emitting gate insulator of the ECLT. Based on this construction, high-performance LETs that make use of various conventional non-emissive semiconductors (e.g., poly(3-hexylthiophene), zinc oxide, and reduced graphene oxide) are successfully demonstrated. All the devices exhibit a high mobility (0.9-10 cm² V^-1 s^-1 ) and a uniform light-emission. This innovative approach demonstrates a novel LET platform and provides a promising pathway to achieve significant breakthroughs to develop electronic circuits and optoelectronic applications.

Full-surface emission of graphene-based vertical-type organic light-emitting transistors with high on/off contrast ratios and enhanced efficiencies

Surface-emitting organic light-emitting transistors (OLETs) could well be a core element in the next generation of active-matrix (AM) displays. We report some of the key characteristics of graphene-based vertical-type organic light-emitting transistors (Gr-VOLETs) composed of a single-layer graphene source and an emissive channel layer. It is shown that FeCl₃ doping of the graphene source results in a significant improvement in the device performance of Gr-VOLETs. Using the FeCl₃-doped graphene source, it is demonstrated that the full-surface electroluminescent emission of the Gr-VOLET can be effectively modulated by gate voltages with high luminance on/off ratios (~10⁴). Current efficiencies are also observed to be much higher than those of control organic light-emitting diodes (OLEDs), even at high luminance levels exceeding 500 cd/m². Moreover, we propose an operating mechanism to explain the improvements in the device performance i.e., the effective gate-bias-induced modulation of the hole tunnelling injection at the doped graphene source electrode. Despite its inherently simple structure, our study highlights the significant improvement in the device performance of OLETs offered by the FeCl₃-doped graphene source electrode.

Optically switchable organic light-emitting transistors

Organic light-emitting transistors are pivotal components for emerging opto- and nanoelectronics applications, such as logic circuitries and smart displays. Within this technology sector, the integration of multiple functionalities in a single electronic device remains the key challenge. Here we show optically switchable organic light-emitting transistors fabricated through a judicious combination of light-emitting semiconductors and photochromic molecules. Irradiation of the solution-processed films at selected wavelengths enables the efficient and reversible tuning of charge transport and electroluminescence simultaneously, with a high degree of modulation (on/off ratios up to 500) in the three primary colours. Different emitting patterns can be written and erased through a non-invasive and mask-free process, on a length scale of a few micrometres in a single device, thereby rendering this technology potentially promising for optically gated highly integrated full-colour displays and active optical memory.

Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO _x gate dielectric and a hybrid multilayer channel consisting of the heterojunction In₂O₃/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm²/(V s)) with appreciable current on/off ratios (≈10³) and an external quantum efficiency of 2 × 10^-2% at 700 cd/m². The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

Light-emitting field-effect transistors (LEFETs) have attained great attention due to their special characteristics of both the switching capacity and the electroluminescence capacity. However, high-performance LEFETs with high mobility, high brightness, and high efficiency have not been realized due to the difficulty in developing high electron and hole mobility materials with suitable band structures. In this paper, quantum dot hybrid LEFETs (QD-HLEFETs) combining high-luminous-efficiency quantum dots (QDs) and a solution-processed scandium-incorporated indium oxide (Sc:In₂O₃) semiconductor were demonstrated. The red QD-HLEFET showed high electrical and optical performance with an electron mobility of 0.8 cm² V^-1 s^-1, a maximum brightness of 13 400 cd/m², and a maximum external quantum efficiency of 8.7%. The high performance of the QD-HLEFET is attributed to the good energy band matching between Sc:In₂O₃ and QDs and the balanced hole and electron injection (less exciton nonradiative recombination). In addition, incorporation of Sc into In₂O₃ can suppress the oxygen vacancy and free carrier generation and brings about excellent current and optical modulation (the on/off current ratio is 10⁵ and the on/off brightness ratio is 10⁶).

Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors

The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.

A Cyclic Alkyl(amino)carbene as Two-Atom π-Chromophore Leading to the First Phosphorescent Linear CuI Complexes

The members of a series of linear and trigonal copper(I) complexes bearing a cyclic alkyl(amino)carbene (CAAC) ligand show surprising photophysical properties compared to those of the corresponding N-heterocyclic carbene (NHC) complexes. Whereas the linear NHC complexes [CuX(NHC)] are almost non-emissive, [CuX(CAAC)] (X=Cl, Br, I) and [Cu(CAAC)₂ ]PF₆ show very bright emissions from their triplet excited states in the blue to green region, displaying quantum yields of up to 65 % in the solid state, even though the π-acceptor comprises only the carbene C and N atoms with no other π conjugation. [Cu(CAAC)₂ ]PF₆ is the fastest Cu^I -based triplet state emitter characterized to date, not displaying thermally activated delayed fluorescence (TADF), with an intrinsic lifetime of only 10.6 μs, that is, k_r =9.4×10⁴  s^-1 , competitive with many Pt^II - and Ir^III -based emitters. In order to test the stability of such linear copper CAAC complexes in devices, some of our compounds have been applied in proof-of-principle organic light-emitting diodes (OLEDs). This case study thus demonstrates for the first time the use of CAACs as suitable π-chromophores for Cu^I -based phosphorescent emitters, and their implementation in OLEDs underlines the general applicability of this class of ligands in materials science.

Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m^-2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W^-1. Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

Improved Performance of Organic Light-Emitting Field-Effect Transistors by Interfacial Modification of Hole-Transport Layer/Emission Layer: Incorporating Organic Heterojunctions

Organic heterojunctions (OHJs) consisting of a strong electron acceptor 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) and an electron donor N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) were demonstrated for the first time that they can be implemented as effective modification layers between hole transport layer (HTL) and emission layer in the heterostructured organic light-emitting field effect transistors (OLEFETs). The influence of both HAT-CN/NPB junction (npJ) and NPB/HAT-CN junction (pnJ) on the optoelectronic performance of OLEFETs were conscientiously investigated. It is found that both the transport ability of holes and the injection ability of holes into emissive layer can be dramatically improved via the charge transfer of the OHJs and that between HAT-CN and the HTL. Consequently, OLEFETs with pnJ present optimal performance of an external quantum efficiency (EQE) of 3.3% at brightness of 2630 cdm(-2) and the ones with npJs show an EQE of 4.7% at brightness of 4620 cdm(-2). By further utilizing npn OHJs of HAT-CN/NPB/HAT-CN, superior optoelectronic performance with an EQE of 4.7% at brightness of 8350 cdm(-2) and on/off ratio of 1 × 10(5) is obtained. The results demonstrate the great practicality of implementing OHJs as effective modification layers in heterostructured OLEFETs.

Vertical Microcavity Organic Light-emitting Field-effect Transistors

Organic light-emitting field-effect transistors (OLEFETs) are regarded as a novel kind of device architecture for fulfilling electrical-pumped organic lasers. However, the realization of OLEFETs with high external quantum efficiency (EQE) and high brightness simultaneously is still a tough task. Moreover, the design of the resonator structure in LED is far from satisfactory. Here, OLEFETs with EQE of 1.5% at the brightness of 2600 cdm(-2), and the corresponding ON/OFF ratio and current efficiency reaches above 10(4) and 3.1 cdA(-1), respectively, were achieved by introducing 1,4,5,8,9,12-hexaazatriphenylene-hexacarbonitrile (HAT-CN) as a charge generation layer. Moreover, a vertical microcavity based on distributed Bragg reflector (DBR) and Ag source/drain electrodes is successfully introduced into the high performance OLEFETs, which results in electroluminescent spectrum linewidth narrowing from 96 nm to 6.9 nm. The results manifest the superiority of the vertical microcavity as an optical resonator in OLEFETs, which sheds some light on achieving the electrically pumped organic lasers.

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations

Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.

Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors

Light-emitting field effect transistors (LEFETs) are an emerging class of multifunctional optoelectronic devices. It combines the light emitting function of an OLED with the switching function of a transistor in a single device architecture. The dual functionality of LEFETs has the potential applications in active matrix displays. However, the key problem of existing LEFETs thus far has been their low EQEs at high brightness, poor ON/OFF and poorly defined light emitting area - a thin emissive zone at the edge of the electrodes. Here we report heterostructure LEFETs based on solution processed unipolar charge transport and an emissive polymer that have an EQE of up to 1% at a brightness of 1350 cd/m², ON/OFF ratio > 10⁴ and a well-defined light emitting zone suitable for display pixel design. We show that a non-planar hole-injecting electrode combined with a semi-transparent electron-injecting electrode enables to achieve high EQE at high brightness and high ON/OFF ratio. Furthermore, we demonstrate that heterostructure LEFETs have a better frequency response (f_cut-off = 2.6 kHz) compared to single layer LEFETs. The results presented here therefore are a major step along the pathway towards the realization of LEFETs for display applications.

Study on the solution and solid-state fluorescence of novel BF2 complexes with (Z)-2-[phenanthridin-6(5H)-ylidene]-1-phenylethanone and its derivatives as ligands

A family of novel N,O-chelated BF₂ complexes with intense solution and solid-state emission were synthesized and their photophysical properties were studied.

All solution-processed, hybrid light emitting field-effect transistors

All solution-processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.