Outlook and emerging semiconducting materials for ambipolar transistors

Solution-processable low-voltage carbon nanotube field-effect transistors with high-krelaxor ferroelectric polymer gate insulator

Achieving energy-efficient and high-performance field-effect transistors (FETs) is one of the most important goals for future electronic devices. This paper reports semiconducting single-walled carbon nanotube FETs (s-SWNT-FETs) with an optimized high-krelaxor ferroelectric insulator P(VDF-TrFE-CFE) thickness for low-voltage operation. The s-SWNT-FETs with an optimized thickness (∼800 nm) of the high-kinsulator exhibited the highest average mobility of 14.4 cm2V-1s-1at the drain voltage (ID) of 1 V, with a high current on/off ratio (Ion/off>105). The optimized device performance resulted from the suppressed gate leakage current (IG) and a sufficiently large capacitance (>50 nF cm-2) of the insulating layer. Despite the extremely high capacitance (>100 nF cm-2) of the insulating layer, an insufficient thickness (<450 nm) induces a highIG, leading to reducedIDand mobility of s-SWNT-FETs. Conversely, an overly thick insulator (>1200 nm) cannot introduce sufficient capacitance, resulting in limited device performance. The large capacitance and sufficient breakdown voltage of the insulating layer with an appropriate thickness significantly improved p-type performance. However, a reduced n-type performance was observed owing to the increased electron trap density caused by fluorine proportional to the insulator thickness. Hence, precise control of the insulator thickness is crucial for achieving low-voltage operation with enhanced s-SWNT-FET performance.

PbS Quantum Dots Ink with Months-Long Shelf-Lifetime Enabling Scalable and Efficient Short-Wavelength Infrared Photodetectors

The phase-transfer ligand exchange of PbS quantum dots (QDs) has substantially simplified device fabrication giving hope for future industrial exploitation. However, this technique when applied to QDs of large size (>4 nm) gives rise to inks with poor colloidal stability, thus hindering the development of QDs photodetectors in short-wavelength infrared range. Here, it is demonstrated that methylammonium lead iodide ligands can provide sufficient passivation of PbS QDs of size up to 6.7 nm, enabling inks with a minimum of ten-week shelf-life time, as proven by optical absorption and solution-small angle X-ray scattering. Furthermore, the maximum linear electron mobility of 4.7 × 10-2 cm2 V-1 s-1 is measured in field-effect transistors fabricated with fresh inks, while transistors fabricated with the same solution after ten-week storage retain 74% of the average starting electron mobility, demonstrating the outstanding quality both of the fresh and aged inks. Finally, photodetectors fabricated via blade-coating exhibit 76% external quantum efficiency at 1300 nm and 1.8 × 1012 Jones specific detectivity, values comparable with devices fabricated using ink with lower stability and wasteful methods such as spin-coating.

Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization

Precise control of charge carrier type and density of two-dimensional (2D) ambipolar semiconductors is the prerequisite for their applications in next-generation integrated circuits and electronic devices. Here, by fabricating a heterointerface between a 2D ambipolar semiconductor (hydrogenated germanene, GeH) and a ferroelectric substrate (PbMg1/3Nb2/3O3-PbTiO3, PMN-PT), fine-tuning of charge carrier type and density of GeH is achieved. Due to ambipolar properties, proper band gap, and high carrier mobility of GeH, by applying the opposite local bias (±8 V), a lateral polarization in GeH is constructed with a change of work function by 0.6 eV. Besides, the built-in polarization in GeH nanoflake could promote the separation of photoexcited electron-hole pairs, which lead to 4 times enhancement of the photoconductivity after poling by 200 V. In addition, a gradient regulation of the work function of GeH from 4.94 to 5.21 eV by adjusting the local substrate polarization is demonstrated, which could be used for data storage at the micrometer size by forming p-n homojunctions. This work of constructing such heterointerfaces provides a pathway for applying 2D ambipolar semiconductors in nonvolatile memory devices, photoelectronic devices, and next-generation integrated circuit.

Enzymatic synthesis of indigo derivatives by tuning P450 BM3 peroxygenases

Indigoids, a class of bis-indoles, have long been applied in dyeing, food, and pharmaceutical industries. Recently, interest in these 'old' molecules has been renewed in the field of organic semiconductors as functional building blocks for organic electronics due to their excellent chemical and physical properties. However, these indigo derivatives are difficult to access through chemical synthesis. In this study, we engineer cytochrome P450 BM3 from an NADPH-dependent monooxygenase to peroxygenases through directed evolution. A select number of P450 BM3 variants are used for the selective oxidation of indole derivatives to form different indigoid pigments with a spectrum of colors. Among the prepared indigoid organic photocatalysts, a majority of indigoids demonstrate a reduced band gap than indigo due to the increased light capture and improved charge separation, making them promising candidates for the development of new organic electronic devices. Thus, we present a useful enzymatic approach with broad substrate scope and cost-effectiveness by using low-cost H₂O₂ as a cofactor for the preparation of diversified indigoids, offering versatility in designing and manufacturing new dyestuff and electronic/sensor components.

Ambipolar operation of progressively designed symmetric bidirectional transistors fabricated using single-channel vertical transistor and electrochemically prepared copper oxide

In this study, a symmetric bidirectional transistors (SBT) is proposed. The device simultaneously implements the "strong-inversion" and "accumulation" mechanisms of a metal-oxide semiconductor field-effect transistor and TFT, respectively, in different bias directions in a single-channel vertical transistor (V-Tr). This ideal SBT device is designed and fabricated by selecting appropriate materials exhibiting a narrow bandgap and intrinsic characteristics of Sb-doped p-type Cu2O, using a V-Tr to optimize the device structure for high-field-induced short-channel and ambipolar operation, and implementing facile electrochemical deposition for channel and plasma channel treatments. To adopt artificial conductivity control for producing the transporting path of minority electron carriers, the patterned-channel-layer sidewall is locally treated using oxygen plasma, thereby suppressing the minority-carrier self-compensation. The SBT device exhibits an excellent on-current (i.e., symmetric accumulation and strong inversion modes in the p- and n-type channel regions, respectively) and excellent midregion off-current, similar to those of ideal ambipolar transistors. Moreover, owing to multilevel signals and excellent inverter behaviors, the SBT device is suitable for application in complementary-metal-oxide-semiconductors and logic memories.

1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review

Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained unaddressed toward the fabrication of 1D and 2D FET gas sensors for real-field applications, which are related to properties, synthesis, and integration of 1D and 2D materials into the transistor architecture. This review paper encompasses the whole assortment of 1D-i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)-and 2D-i.e., graphene, transition metal dichalcogenides (TMD), phosphorene-materials used in FET gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties of these devices. Eventually, pros and cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, pointing out weakness and highlighting future directions.

Deciphering pressure-induced nanoarchitectonics in a monolayer of heterocoronene-based discotics at air-water and air-solid interfaces

Understanding and control of molecular alignment at the nanoscale in self-assembled supramolecular structures is a prerequisite for the subsequent exploitation of molecules in functional devices. Here, we have clarified the surface-pressure induced molecular nanoarchitectures in a monolayer of a heterocoronene-based discotic liquid crystal (DLC) at air-water and air-solid interfaces using surface manometry, real-time Brewster angle microscopy, and real-space atomic force microscopy (AFM). Chloroform-spread DLCs at a concentration of ∼108 μM exhibit floating domains at the air-water interface comprising small aggregates of edge-on stacked molecules interacting via peripheral alkyl chains. Detailed analysis of surface manometry and relaxation measurements reveal that, upon compression, these domains coalesce to form a coherent monolayer which then undergoes irreversible structural transformations via mechanisms such as monolayer loss due to desorption and localized nucleation of defects. AFM images of the films transferred on a hydrophilic substrate reveal that with increasing surface-pressure, the nanoscale structure of the monolayer transforms from randomly oriented nanowires to tightly-packed nanowire domains, and finally to fragmented wire segments which diffuse locally above the film. These results provide a facile method for the preparation of compact, two-dimensional films of ambipolar DLC molecules with a tunable nanoarchitecture which will be crucial for their applications in nanoscale electronic devices.

Ambipolar Nickel Dithiolene Complex Semiconductors: From One- to Two-Dimensional Electronic Structures Based upon Alkoxy Chain Lengths

Air-stable single-component ambipolar organic semiconductors that conduct both holes and electrons are highly desired but have been rarely realized. Neutral nickel bis(dithiolene) complexes are promising candidates that fulfill the stringent electronic requirements of shallow HOMO levels and deep LUMO levels, which can reduce the carrier injection barrier to overcome the work function of gold electrodes and ensure air stability. However, most nickel bis(dithiolene) analogs that have been characterized as ambipolar semiconductors have twisted molecular structures that hinder the effective intermolecular interactions required for carrier conduction. To address this issue, we synthesized planar alkoxy-substituted nickel bis(dithiolene) analogs that facilitate dense packing with effective intermolecular interactions. Remarkably, changing the methoxy substituents to ethoxy or propoxy groups led to a dramatic change in the packing mode, from one-dimensional to herringbone-like, while maintaining effective intermolecular interactions. These materials overcome the usual trade-off between crystallinity and solubility; they are highly crystalline, even in their film forms, and are highly soluble in organic solvents. They are therefore readily solution-processable to form semiconducting layers with well-defined and well-ordered structures in field-effect transistors. Devices based on these compounds exhibited efficient ambipolar characteristics, even after several months of exposure to air, achieving high carrier mobilities of up to 10^-2 cm² V^-1 s^-1 and large on/off ratios of up to 10⁵, which are the top-class performances achieved for a single-component ambipolar semiconductor material driven in air.

Circularly polarized electroluminescence from a single-crystal organic microcavity light-emitting diode based on photonic spin-orbit interactions

Circularly polarized (CP) electroluminescence from organic light-emitting diodes (OLEDs) has aroused considerable attention for their potential in future display and photonic technologies. The development of CP-OLEDs relies largely on chiral-emitters, which not only remain rare owing to difficulties in design and synthesis but also limit the performance of electroluminescence. When the polarization (pseudospin) degrees of freedom of a photon interact with its orbital angular momentum, photonic spin-orbit interaction (SOI) emerges such as Rashba-Dresselhaus (RD) effect. Here, we demonstrate a chiral-emitter-free microcavity CP-OLED with a high dissymmetry factor (g_EL) and high luminance by embedding a thin two-dimensional organic single crystal (2D-OSC) between two silver layers which serve as two metallic mirrors forming a microcavity and meanwhile also as two electrodes in an OLED architecture. In the presence of the RD effect, the SOIs in the birefringent 2D-OSC microcavity result in a controllable spin-splitting with CP dispersions. Thanks to the high emission efficiency and high carrier mobility of the OSC, chiral-emitter-free CP-OLEDs have been demonstrated exhibiting a high g_EL of 1.1 and a maximum luminance of about 60000 cd/m², which places our device among the best performing CP-OLEDs. This strategy opens an avenue for practical applications towards on-chip microcavity CP-OLEDs.

A review on functional nanoarchitectonics nanocomposites based on octahedral metal atom clusters (Nb6, Mo6, Ta6, W6, Re6): inorganic 0D and 2D powders and films

This review is dedicated to various functional nanoarchitectonic nanocomposites based on molecular octahedral metal atom clusters (Nb₆, Mo₆, Ta₆, W₆, Re₆). Powder and film nanocomposites with two-dimensional, one-dimensional and zero-dimensional morphologies are presented, as well as film matrices from organic polymers to inorganic layered oxides. The high potential and synergetic effects of these nanocomposites for biotechnology applications, photovoltaic, solar control, catalytic, photonic and sensor applications are demonstrated. This review also provides a basic level of understanding how nanocomposites are characterized and processed using different techniques and methods. The main objective of this review would be to provide guiding significance for the design of new high-performance nanocomposites based on transition metal atom clusters.

Ambipolar blend-based organic electrochemical transistors and inverters

CMOS-like circuits in bioelectronics translate biological to electronic signals using organic electrochemical transistors (OECTs) based on organic mixed ionic-electronic conductors (OMIECs). Ambipolar OECTs can reduce the complexity of circuit fabrication, and in bioelectronics have the major advantage of detecting both cations and anions in one device, which further expands the prospects for diagnosis and sensing. Ambipolar OMIECs however, are scarce, limited by intricate materials design and complex synthesis. Here we demonstrate that judicious selection of p- and n-type materials for blend-based OMIECs offers a simple and tunable approach for the fabrication of ambipolar OECTs and corresponding circuits. These OECTs show high transconductance and excellent stability over multiple alternating polarity cycles, with ON/OFF ratios exceeding 10³ and high gains in corresponding inverters. This work presents a simple and versatile new paradigm for the fabrication of ambipolar OMIECs and circuits with little constraints on materials design and synthesis and numerous possibilities for tunability and optimization towards higher performing bioelectronic applications.

Ambipolar organic electrochemical transistors simplify bioelectronics circuitry but are challenging due to complicated material design and synthesis. Here, the authors demonstrate that p- and n-type blends offer a simple and tuneable approach for the fabrication of ambipolar devices and circuits.

Evidence of the Ambipolar Behavior of Mo6 Cluster Iodides in All-Inorganic Solar Cells: A New Example of Nanoarchitectonic Concept

Ambipolar materials such as carbon nanotubes, graphene, or 2D transition metal chalcogenides are very attractive for a large range of applications, namely, light-emitting transistors, logic circuits, gas sensors, flash memories, and solar cells. In this work, it is shown that the nanoarchitectonics of inorganic Mo₆ cluster-based iodides enable to form thin films exhibiting photophysical properties that enable their classification as new members of the restricted family of ambipolar materials. Thus, the electronic properties of the ternary iodide Cs₂[{Mo₆I₈ⁱ}I₆^a] and those of thin films of the aqua-complex-based compound [{Mo₆I₈ⁱ}I₄^a(H₂O)₂^a]·xH₂O were investigated through an in-depth photoelectrochemical study. Once hole/electron pairs are created, the holes and electrons turn to be transported simultaneously in opposite directions, and their lifetimes exhibit similar values. The ambipolar properties were demonstrated via the integration of [{Mo₆I₈ⁱ}I₄^a(H₂O)₂^a]·xH₂O as light harvesters in an all-solid solar cell. A significant photoresponse with a typical diode characteristic clearly provides evidence of the simultaneous transfer and transport of holes and electrons within the [{Mo₆I₈ⁱ}I₄^a(H₂O)₂^a]·xH₂O layer. The ambipolar behavior results, on the one hand, from the confinement of electrons imposed by the nanometric size of the molecular metal clusters and, on the other hand, from the poor electronic interactions between clusters in the solid state. Such molecular structure-based layers lead naturally to an intrinsic semiconducting behavior.

Design strategies for improving the crystallinity of covalent organic frameworks and conjugated polymers: a review

Highly crystalline covalent organic frameworks (COFs) or conjugated polymers (CPs) are very important and highly desirable because these materials would display better performance in diverse devices and provide more structure-property related information. However, how to achieve highly crystalline or single-crystal COFs and CPs is very challenging. Recently, many research studies have demonstrated the possibility of enhancing the crystallinity of COFs and CPs. Thus, it is timely to offer an overview of the important progress in improving the crystallinity of COFs and CPs from the viewpoint of design strategies. These strategies include polycondensation reaction optimization, improving the planarity, fluorine substitution, side chain engineering, and so on. Furthermore, the challenges and perspectives are also discussed to promote the realization of highly crystalline or single-crystal COFs and CPs.

Synthesis and characterization of naphthalene derivatives for two-component heterojunction-based ambipolar field-effect transistors complemented with copper hexadecafluorophthalocyanine (F16CuPc)

Ambipolar OFET performance was obtained by adjusting two-component bilayer devices based on new naphthalene derivatives and F16CuPc.

Self-assembled organic homostructures with tunable optical waveguides fabricated via "cocrystal engineering"

Organic homostructures with tunable physiochemical properties were fabricated by simply changing the isomer molecules via the "cocrystal engineering" approach. The morphology of the cocrystals can be changed into rod-like or branched, with superior waveguide and multi-directional waveguide performance, respectively, which contributes to the realization of optical waveguide modules with integrated functions.

Ta2 Ni3 Se8 : 1D van der Waals Material with Ambipolar Behavior

In this study, high-purity and centimeter-scale bulk Ta₂ Ni₃ Se₈ crystals are obtained by controlling the growth temperature and stoichiometric ratio between tantalum, nickel, and selenium. It is demonstrated that the bulk Ta₂ Ni₃ Se₈ crystals could be effectively exfoliated into a few chain-scale nanowires through simple mechanical exfoliation and liquid-phase exfoliation. Also, the calculation of electronic band structures confirms that Ta₂ Ni₃ Se₈ is a semiconducting material with a small bandgap. A field-effect transistor is successfully fabricated on the mechanically exfoliated Ta₂ Ni₃ Se₈ nanowires. Transport measurements at room temperature reveal that Ta₂ Ni₃ Se₈ nanowires exhibit ambipolar semiconducting behavior with maximum mobilities of 20.3 and 3.52 cm² V^-1 s^-1 for electrons and holes, respectively. The temperature-dependent transport measurement (from 90 to 295 K) confirms the carrier transport mechanism of Ta₂ Ni₃ Se₈ nanowires. Based on these characteristics, the obtained 1D vdW material is expected to be a potential candidate for additional 1D materials as channel materials.

A nonchlorinated solvent-processed polymer semiconductor for high-performance ambipolar transistors

Ambipolar polymer semiconductors are potentially serviceable for logic circuits, light-emitting field-effect transistors (LFETs) and polymer solar cells (PSCs). Although several high-performance ambipolar polymers have been developed, their optoelectronic devices are generally processed from toxic chlorinated solvents. To achieve the commercial applications of organic FETs (OFETs), the polymers should be processed from nonchlorinated solvents, instead of chlorinated solvents. However, most conjugated polymers show poor solubility in nonchlorinated solvents. It is of great importance to develop ambipolar polymers that can be processed from nonchlorinated solvents. Here, we develop a nonchlorinated solvent processed polymer named poly[7-fluoro-N, N^′-di(4-decyltetradecyl)-7^′-azaisoindigo-6^′,6^″-(thieno[3,2-b]thiophene-2,5-diyl)-7‴-fluoro-N^″, N‴-di(4-decyltetradecyl)-7^″-azaisoindigo-6,6‴-([2,2^″-bithiophene]-5,5^″-diyl)] (PITTI-BT) by designing a monomer with a large molar mass. The polymer displays good solubility in p-xylene (PX). Well-aligned films of PITTI-BT are achieved by an off-center spin-coating (SC) method. Based on the high-quality films, the OFETs fabricated from PX solution achieve record ambipolar performance with hole and electron mobilities of 3.06 and 2.81 cm² V⁻¹ s⁻¹, respectively. The combination of nonchlorinated solvents and good alignment process offers an effective and eco-friendly approach to obtain high-performance ambipolar transistors.

Synergy between Photoluminescence and Charge Transport Achieved by Finely Tuning Polymeric Backbones for Efficient Light-Emitting Transistor

The lack of design principle for developing high-performance polymer materials displaying strong fluorescence and high ambipolar charge mobilities limited their performance in organic light-emitting transistors (OLETs), electrically pumped organic laser, and other advanced electronic devices. A series of semiladder polymers by copolymerization of weak acceptors (TPTQ or TPTI) and weak donors (fluorene (F) or carbazole (C)) have been developed for luminescent and charge transporting properties. It was found that enhanced planarity, high crystallinity, and a delicate balance in interchain aggregation obtained in the new copolymer, TPTQ-F, contributed to high ambipolar charge mobilities and photoluminescent quantum yield. TPTQ-F showed excellent performance in solution-processed multilayered OLET devices with an external quantum efficiency (EQE) of 5.3%.

Unveiling the effects of substituents on the packing motif and the carrier transport of dinaphtho-thieno-thiophene (DNTT)-based materials

The impacts of intermolecular interactions on packing motifs and substitution positions on charge transport properties are elaborately delineated based on four crystal structures of dinaphtho-thieno-thiophene (DNTT) derivatives predicted by USPEX.

On the Colloidal Stability of PbS Quantum Dots Capped with Methylammonium Lead Iodide Ligands

Phase-transfer exchange of pristine organic ligands for inorganic ones is essential for the integration of colloidal quantum dots (CQDs) in optoelectronic devices. This method results in a colloidal dispersion (ink) which can be directly deposited by various solution-processable techniques to fabricate conductive films. For PbS CQDs capped with methylammonium lead iodide ligands (MAPbI₃), the most commonly employed solvent is butylamine, which enables only a short-term (hours) colloidal stability and thus brings concerns on the possibility of manufacturing CQD devices on a large scale in a reproducible manner. In this work, we studied the stability of alternative inks in two highly polar solvents which impart long-term colloidal stability of CQDs: propylene carbonate (PC) and 2,6-difluoropyridine (DFP). The aging and the loss of the ink's stability were monitored with optical, structural, and transport measurements. With these solvents, PbS CQDs capped with MAPbI₃ ligands retain colloidal stability for more than 20 months, both in dilute and concentrated dispersions. After 17 months of ink storage, transistors with a maximum linear mobility for electrons of 8.5 × 10^-3 cm²/V s are fabricated; this value is 17% of the one obtained with fresh solutions. Our results show that both PC- and DFP-based PbS CQD inks offer the needed shelf life to allow for the development of a CQD device technology.

Foldable semi-ladder polymers: novel aggregation behavior and high-performance solution-processed organic light-emitting transistors

A critical issue in developing high-performance organic light-emitting transistors (OLETs) is to balance the trade-off between charge transport and light emission in a semiconducting material. Although traditional materials for organic light-emitting diodes (OLEDs) or organic field-effect transistors (OFETs) have shown modest performance in OLET devices, design strategies towards high-performance OLET materials and the crucial structure–performance relationship remain unclear. Our research effort in developing cross-conjugated weak acceptor-weak donor copolymers for luminescent properties lead us to an unintentional discovery that these copolymers form coiled foldamers with intramolecular H-aggregation, leading to their exceptional OLET properties. An impressive external quantum efficiency (EQE) of 6.9% in solution-processed multi-layer OLET devices was achieved.

Coiled foldamers with intramolecular H-aggregation in semi-ladder copolymers lead towards the highest EQE of 6.9% in solution-processed multi-layer OLETs.

Molecular Semiconductors for Logic Operations: Dead-End or Bright Future?

The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm² V^-1 s^-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

One-Dimensional Fullerene/Porphyrin Cocrystals: Near-Infrared Light Sensing through Component Interactions

Recently, organic donor-acceptor (D-A) cocrystals have attracted special interest as functional materials because of their unique chemical and physical properties that are not exhibited by simple mixtures of their components. Herein, we report the preparation of one-dimensional novel D-A cocrystals from C₆₀ and 5,10,15,20-tetrakis(3,5-dimethoxyphenyl)porphyrin (3,5-TPP); these cocrystals have near-infrared (NIR) light-sensing abilities, despite each of their component molecule individually having no NIR light-sensing properties. Micrometer-sized rectangular columnar C₆₀-3,5-TPP cocrystals were produced by a simple liquid-liquid interfacial precipitation method. The cocrystals exhibit a new strong transition in the NIR region indicative of the existence of charge-transfer interactions between C₆₀ and 3,5-TPP in the cocrystals. The C₆₀-3,5-TPP cocrystals showed n-type transport characteristics with NIR light-sensing properties when the cocrystals were incorporated in bottom-gate/bottom-contact organic phototransistors, revealing that organic cocrystals with suitable charge-transfer interaction are useful as functional materials for the creation of novel NIR-light-sensing devices.

Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors

Chemiresistive gas sensors, which exploit their electrical resistance in response to changes in nearby gas environments, usually achieve selective gas detection using multi-element sensor arrays. As large numbers of sensors are required, they often suffer from complex and high-cost fabrication. Here, we demonstrate an ambipolar organic thin-film transistor as a potential multi-gas sensing device utilizing gate-tunable gas sensing behaviors. Combining behaviors of both electron and hole carriers in a single device, the proposed device showed dynamic changes depending on gate biases and properties of target gases. As a result, the gas response as a function of gate biases exhibits a unique pattern towards a specific gas as well as its concentrations, which is very different from conventional unipolar organic thin-film transistors. In addition, our device showed an excellent air-stable characteristic compared to typical ambipolar transistors, providing great potential for practical use in the future.

Ambipolar organic field effect transistor shows a great potential to be used for multi-gas sensing device utilizing gate-tunable gas sensing behaviors.

Organic-based inverters: basic concepts, materials, novel architectures and applications

The review article covers the materials and techniques employed to fabricate organic-based inverter circuits and highlights their novel architectures, ground-breaking performances and potential applications.

Controlled Growth and Thickness-Dependent Conduction-Type Transition of 2D Ferrimagnetic Cr2 S3 Semiconductors

2D magnetic materials have attracted intense attention as ideal platforms for constructing multifunctional electronic and spintronic devices. However, most of the reported 2D magnetic materials are mainly achieved by the mechanical exfoliation route. The direct synthesis of such materials is still rarely reported, especially toward thickness-controlled synthesis down to the 2D limit. Herein, the thickness-tunable synthesis of nanothick rhombohedral Cr₂ S₃ flakes (from ≈1.9 nm to tens of nanometers) on a chemically inert mica substrate via a facile chemical vapor deposition route is demonstrated. This is accomplished by an accurate control of the feeding rate of the Cr precursor and the growth temperature. Furthermore, it is revealed that the conduction behavior of the nanothick Cr₂ S₃ is variable with increasing thickness (from 2.6 to 4.8 nm and >7 nm) from p-type to ambipolar and then to n-type. Hereby, this work can shed light on the scalable synthesis, transport, and magnetic properties explorations of 2D magnetic materials.

Influences of Structural Modification of Naphthalenediimides with Benzothiazole on Organic Field-Effect Transistor and Non-Fullerene Perovskite Solar Cell Characteristics

Developing air-stable high-performance small organic molecule-based n-type and ambipolar organic field-effect transistors (OFETs) is very important and highly desirable. In this investigation, we designed and synthesized two naphthalenediimide (NDI) derivatives (NDI-BTH1 and NDI-BTH2) and found that introduction of 2-(benzo[d]thiazol-2-yl) acetonitrile groups at the NDI core position gave the lowest unoccupied molecular orbital (LUMO; -4.326 eV) and displayed strong electron affinities, suggesting that NDI-BTH1 might be a promising electron-transporting material (i.e., n-type semiconductor), whereas NDI-BTH2 bearing bis(benzo[d]thiazol-2-yl)methane at the NDI core with a LUMO of -4.243 eV was demonstrated to be an ambipolar material. OFETs based on NDI-BTH1 and NDI-BTH2 have been fabricated, and the electron mobilities of NDI-BTH1 and NDI-BTH2 are 14.00 × 10^-5 and 8.64 × 10^-4 cm²/V·s, respectively, and the hole mobility of NDI-BTH2 is 1.68 × 10^-4 cm²/V·s. Moreover, a difference in NDI-core substituent moieties significantly alters the UV-vis absorption and cyclic voltammetry properties. Thus, we further successfully employed NDI-BTH1 and NDI-BTH2 as electron transport layer (ETL) materials in inverted perovskite solar cells (PSCs). The PSC performance exhibits that NDI-BTH2 as the ETL material gave higher power conversion efficiency as compared to NDI-BTH1, that is, NDI-BTH2 produces 15.4%, while NDI-BTH1 gives 13.7%. The PSC performance is comparable with the results obtained from OFETs. We presume that improvement in solar cell efficiency of NDI-BTH2-based PSCs is due to the well-matched LUMO of NDI-BTH2 toward the conduction band of the perovskite layer, which in turn increase electron extraction and transportation.

2D Molecular Crystal Bilayer p-n Junctions: A General Route toward High-Performance and Well-Balanced Ambipolar Organic Field-Effect Transistors

Ambipolar organic field-effect transistors (OFETs) are vital for the construction of high-performance all-organic digital circuits. The bilayer p-n junction structure, which is composed of separate layers of p- and n-type organic semiconductors, is considered a promising way to realize well-balanced ambipolar charge transport. However, this approach suffers from severely reduced mobility due to the rough interface between the polycrystalline thin films of p- and n-type organic semiconductors. Herein, 2D molecular crystal (2DMC) bilayer p-n junctions are proposed to construct high-performance and well-balanced ambipolar OFETs. The molecular-scale thickness of the 2DMC ensures high injection efficiency and the atomically flat surface of the 2DMC leads to high-quality p- and n-layer interfaces. Moreover, by controlling the layer numbers of the p- and n-type 2DMCs, the electron and hole mobilities are tuned and well-balanced ambipolar transport is accomplished. The hole and electron mobilities reach up to 0.87 and 0.82 cm² V^-1 s^-1 , respectively, which are the highest values among organic single-crystalline double-channel OFETs measured in ambient air. This work provides a general route to construct high-performance and well-balanced ambipolar OFETs based on available unipolar materials.

Theoretical study on the charge transport properties of three series of dicyanomethylene quinoidal thiophene derivatives

It is very important to analyse the most advantageous connection style for quinoidal thiophene derivatives, which are used in n-type organic semiconductor transport materials. In the present work, the charge transport properties of three series of quinoidal thiophene derivatives, oligothiophene (series A), thienothiophene (series B) and benzothiophene (series C), are systematically investigated by employing full quantum charge transfer theory combined with kinetic Monte-Carlo simulation. The single crystal structures of the molecules we had constructed were predicted using the USPEX program combined with density functional theory (DFT) and considering the dispersion corrected. Our theoretical results expounded how the different connection styles, including oligo-, thieno-, and benzo-thiophene in the quinoidal thiophenes derivatives, effectively tune their electronic structures, and revealed how their intermolecular interactions affect the molecular packing patterns and hence their charge transport properties by symmetry-adapted perturbation theory (SAPT). In the meantime we also elucidated the role of end-cyano groups in noncovalent interactions. Furthermore, it is clarified that quinoidal thiophene derivatives show excellent carrier transport properties due to their optimal molecular stacking motifs and larger electronic couplings besides their low energy gap. In addition, our theoretical results demonstrate that quinoidal oligothiophene derivatives (n = 3-5) with more thiophene rings will have ambipolar transport properties, so quinoidal thienothiophene and benzothiophene derivatives should be promising alternatives as n-type OSCs. When we focused only on the electronic transport properties in the three series of molecules, quinoidal benzothiophene derivatives were slightly better than quinoidal oligothiophene or thienothiophene derivatives.

Synthesis and Charge-Transporting Properties of Dibenzothiphene Dioxide-Based Polysiloxanes

We designed and synthesized a dibenzothiphene dioxide-based homopolysiloxane, PDBTSi, and a carbazole-dibenzothiophene dioxide alternating copolysiloxane, PCzSi-alt-PDBTSi, respectively. Both PDBTSi and PCzSi-alt-PDBTSi possess an improved solubility, good film-forming ability and extremely high thermal stability due to introduction of polysiloxane main chains. Meanwhile, PDBTSi and PCzSi-alt-PDBTSi exhibit high triplet energy levels of 2.95 eV and 3.05 eV, respectively. Furthermore, PDBTSi possesses good electron-transporting property with an electron mobility of 1.02×10^-4  cm²  V^-1  s^-1 and a relatively balanced hole mobility of 8.76×10^-5  cm²  V^-1  s^-1 . In contrast, PCzSi-alt-PDBTSi exhibits an electron mobility of 4.65×10^-5  cm²  V^-1  s^-1 and a hole mobility of 1.17×10^-4  cm²  V^-1  s^-1 . Therefore, our results here provide a feasible strategy to obtain solution-processed polysiloxane materials with high and balanced electron- and hole-transporting properties.

Contact Resistance in Ambipolar Organic Field-Effect Transistors Measured by Confocal Photoluminescence Electro-Modulation Microscopy

Although it is theoretically expected that all organic semiconductors support ambipolar charge transport, most organic transistors either transport holes or electrons effectively. Single-layer ambipolar organic field-effect transistors enable the investigation of different mechanisms in hole and electron transport in a single device since the device architecture provides a controllable planar pn-junction within the transistor channel. However, a direct comparison of the injection barriers and of the channel conductivities between electrons and holes within the same device cannot be measured by standard electrical characterization. This article introduces a novel approach for determining threshold gate voltages for the onset of the ambipolar regime from the position of the pn-junction observed by photoluminescence electro-modulation (PLEM) microscopy. Indeed, the threshold gate voltage in the ambipolar bias regime considers a vanishing channel length, thus correlating the contact resistance. PLEM microscopy is a valuable tool to directly compare the contact and channel resistances for both carrier types in the same device. The reported results demonstrate that designing the metal/organic-semiconductor interfaces by aligning the bulk metal Fermi levels to the highest occupied molecular orbital or lowest unoccupied molecular orbital levels of the organic semiconductors is a too simplistic approach for optimizing the charge-injection process in organic field-effect devices.

Clarification of the Molecular Doping Mechanism in Organic Single-Crystalline Semiconductors and their Application in Color-Tunable Light-Emitting Devices

Organic single-crystalline semiconductors with long-range periodic order have attracted much attention for potential applications in electronic and optoelectronic devices due to their high carrier mobility, highly thermal stability, and low impurity content. Molecular doping has been proposed as a valuable strategy for improving the performance of organic semiconductors and semiconductor-based devices. However, a fundamental understanding of the inherent doping mechanism is still a key challenge impeding its practical application. In this study, solid evidence for the "perfect" substitutional doping mechanism of the stacking mode between the guest and host molecules in organic single-crystalline semiconductors using polarized photoluminescence spectrum measurements and first-principles calculations is provided. The molecular host-guest doping is further exploited for efficient color-tunable and even white organic single-crystal-based light-emitting devices by controlling the doping concentration. The clarification of the molecular doping mechanism in organic single-crystalline semiconductor host-guest system paves the way for their practical application in high-performance electronic and optoelectronic devices.

Copolymers of Bis-Diketopyrrolopyrrole and Benzothiadiazole Derivatives for High-Performance Ambipolar Field-Effect Transistors on Flexible Substrates

We develop an "acceptor dimerization" strategy by a bis-diketopyrrolopyrrole (2DPP) for an ambipolar organic semiconductor. Copolymers of 2DPP and benzothiadiazole (BTz) derivatives, P2DPP-BTz and P2DPP-2FBTz, are designed and synthesized. Both of the polymers exhibit narrow optical bandgaps of ca. 1.30 eV. The strong electron-withdrawing property of 2DPP results in low-lying lowest unoccupied molecular orbital (LUMO) energy levels of the polymers, improving the electron mobilities. 2D grazing incident X-ray diffraction and atomic force microscopy indicate that the P2DPP-BTz exhibits a small π-π stacking distance of 3.59 Å and a smooth interface, thus promoting high mobility. To take full advantage of the flexibility of organic semiconductors, flexible field-effect transistors (FETs) were fabricated on poly(ethylene terephthalate) (PET) substrates. The FETs based on P2DPP-BTz show high performance with hole and electron mobilities of 1.73 and 2.58 cm² V^-1 s^-1, respectively. Our results demonstrate that the 2DPP acceptor is a promising building block for high-mobility ambipolar polymers.

FeIn2S4 Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field-Effect Transistors

An ambipolar channel layer material is required to realize the potential benefits of ambipolar complementary metal-oxide-semiconductor field-effect transistors, namely their compact and efficient nature, reduced reverse power dissipation, and possible applicability to highly integrated circuits. Here, a ternary metal chalcogenide nanocrystal material, FeIn2S4, is introduced as a solution-processable ambipolar channel material for field-effect transistors (FETs). The highest occupied molecular orbital and the lowest unoccupied molecular orbital of the FeIn2S4 nanocrystals are determined to be -5.2 and -3.75 eV, respectively, based upon cyclic voltammetry, X-ray photoelectron spectroscopy, and diffraction reflectance spectroscopy analyses. An ambipolar FeIn2S4 FET is successfully fabricated with Au electrodes (EF = -5.1 eV), showing both electron mobility (14.96 cm2 V-1 s-1) and hole mobility (9.15 cm2 V-1 s-1) in a single channel layer, with an on/off current ratio of 105. This suggests that FeIn2S4 nanocrystals may be a promising alternative semiconducting material for next-generation integrated circuit development.

A study of the density of states of ZnCoO:H from resistivity measurements

Understanding the electronic band structure and density of states (DOS) of a material and their relationship to the associated electronic transport properties is the starting point for optimizing the performance of a device and its technological applications. In a hydrogenated Zn_0.8Co_0.2O (ZnCoO:H) film with an inverted thin-film transistor structure, we found ambipolar behavior, which is shown in many field-effect devices based on graphene, graphene nanoribbons, and organic semiconductors. In this study, to obtain information on the DOS of ZnCoO:H to explain the ambipolar behavior in terms of the carrier density and type, resistivity and magnetoresistance measurements of a ZnCoO:H film were performed at 5 K. Our proposed DOS representation of ZnCoO:H explains qualitatively the experimental observations of carrier density modulation and ambipolar behavior. First-principles calculations of the DOS of ZnCoO:H were in good agreement with the proposed DOS representation. Through a comparison of first-principles calculations and experimental data, evidence for the existence of Co–H–Co in ZnCoO:H is suggested.

Ambipolar behavior in a hydrogenated Zn_0.8Co_0.2O (ZnCoO:H) film is investigated via resistivity and magnetoresistance measurements and first-principles calculations of the DOS. Evidence for the existence of Co–H–Co in ZnCoO:H is suggested.

Cyano-substituted benzochalcogenadiazole-based polymer semiconductors for balanced ambipolar organic thin-film transistors

Two new cyano-substituted benzochalcogenadiazoles were copolymerized with bithiophene, and the polymers show well balanced ambipolarity in transistors.

In Silico Modeling of Indigo and Tyrian Purple Single-Electron Nano-Transistors Using Density Functional Theory Approach

The purpose of this study was to develop and implement an in silico model of indigoid-based single-electron transistor (SET) nanodevices, which consist of indigoid molecules from natural dye weakly coupled to gold electrodes that function in a Coulomb blockade regime. The electronic properties of the indigoid molecules were investigated using the optimized density-functional theory (DFT) with a continuum model. Higher electron transport characteristics were determined for Tyrian purple, consistent with experimentally derived data. Overall, these results can be used to correctly predict and emphasize the electron transport functions of organic SETs, demonstrating their potential for sustainable nanoelectronics comprising the biodegradable and biocompatible materials. In silico model and gate coupling of indigoid single-electron nano-transistors.

Anomalous Ambipolar Transport of Organic Semiconducting Crystals via Control of Molecular Packing Structures

Organic crystals deposited on 2-dimensional (2D) van der Waals substrates have been widely investigated due to their unprecedented crystal structures and electrical properties. van der Waals interaction between organic molecules and the substrate induces epitaxial growth of high quality organic crystals and their anomalous crystal morphologies. Here, we report on unique ambipolar charge transport of a "lying-down" pentacene crystal grown on a 2D hexagonal boron nitride van der Waals substrate. From in-depth analysis on crystal growth behavior and ultraviolet photoemission spectroscopy measurement, it is revealed that the pentacene crystal at the initial growth stage have a lattice-strained packing structure and unique energy band structure with a deep highest occupied molecular orbital level compared to conventional "standing-up" crystals. The lattice-strained pentacene few layers enable ambipolar charge transport in field-effect transistors with balanced hole and electron field-effect mobilities. Complementary logic circuits composed of the two identical transistors show clear inverting functionality with a high gain up to 15. The interesting crystal morphology of organic crystals on van der Waals substrates is expected to attract broad attentions on organic/2D interfaces for their electronic applications.

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.