Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS-ZnO heterostructure nanofilms

Rational design of comb-like 1D-1D ZnO-ZnSe heterostructures toward their excellent performance in flexible photodetectors

One-dimensional (1D) Zn-based heterostructures have attracted considerable interest in the field of photodetection because of their tunable properties, flexibility, and unique optoelectronic properties. However, designing 1D multi-component Zn-based heterostructures for advanced photodetectors is still a great challenge. Herein, comb-like 1D-1D ZnO-ZnSe heterostructures with ZnO and ZnSe nanowires (NWs) comprising the shaft and teeth of a comb are reported. The length of the ZnO NWs can be modulated in the range of 300-1200 nm. Microstructural characterizations confirm that the 1D heterostructure clearly shows the spatial distribution of individual components. The well-designed structure displays an extended broadband photoresponse and higher photosensitivity than pure ZnSe NWs. Furthermore, ZnSe NWs with an appropriate length of ZnO branches show increased photoresponses of 3835% and 798% compared to those of pure ZnSe NWs under green and red-light irradiation, respectively. In addition, the integrated flexible photodetector presents excellent folding endurance after 1000 bending tests. This well-designed structure has significant potential for other 1D-based semiconductors in optoelectronic applications.

Synthesis, Characterization, and Electronic Properties of ZnO/ZnS Core/Shell Nanostructures Investigated Using a Multidisciplinary Approach

ZnO/ZnS core/shell nanostructures, which are studied for diverse possible applications, ranging from semiconductors, photovoltaics, and light-emitting diodes (LED), to solar cells, infrared detectors, and thermoelectrics, were synthesized and characterized by XRD, HR-(S)TEM, and analytical TEM (EDX and EELS). Moreover, band-gap measurements of the ZnO/ZnS core/shell nanostructures have been performed using UV/Vis DRS. The experimental results were combined with theoretical modeling of ZnO/ZnS (hetero)structures and band structure calculations for ZnO/ZnS systems, yielding more insights into the properties of the nanoparticles. The ab initio calculations were performed using hybrid PBE0 and HSE06 functionals. The synthesized and characterized ZnO/ZnS core/shell materials show a unique three-phase composition, where the ZnO phase is dominant in the core region and, interestingly, the auxiliary ZnS compound occurs in two phases as wurtzite and sphalerite in the shell region. Moreover, theoretical ab initio calculations show advanced semiconducting properties and possible band-gap tuning in such ZnO/ZnS structures.

Interface characteristics of graphene/ZnS hybrid-dimensional heterostructures

Graphene/ZnS hybrid-dimensional heterostructure is an excellent combination to regulate and improve the conductivity and sensitivity of components, in which the interface effects have crucial impacts on the performance of devices. In this work, we investigate the interface characteristics of Graphene/ZnS 2D/3D heterostructures. X-ray photoelectron spectra show that the ZnS binding energy shifts to lower energy by 0.3 eV after forming heterojunction with graphene. The fluorescence and absorption spectra confirm the luminescence enhancement and blue-shift of the absorbance edge of ZnS caused by graphene. The composition of Graphene/ZnS heterostructure facilitates separation and transfer of spatial charges, resulting in rapid electron transport.

Upconversion under Photon Trapping in ZnO/BN Nanoarray: An Ultrahigh Responsivity Solar-Blind Photodetecting Paper

Solar-blind photodetectors (PDs) are widely applicable in special, military, medical, environmental, and commercial fields. However, high performance and flexible PD for deep ultraviolet (UV) range is still a challenge. Here, it is demonstrated that an upconversion of photon absorption beyond the energy bandgap is achieved in the ZnO nanoarray/h-BN heterostructure, which enables the ultrahigh responsivity of a solar-blind photodetecting paper. The direct growth of ultralong ZnO nanoarray on polycrystalline copper paper induced by h-BN 2D interlayer is obtained. Meanwhile, strong photon trapping takes place within the ZnO nanoarray forest through the cyclic state transition of surface oxygen ions, resulting in an extremely high absorption efficiency (> 99.5%). A flexible photodetecting paper is fabricated for switchable detections between near UV and deep UV signals by critical external bias. The device shows robust reliability, ultrahigh responsivity up to 700 A W^-1 @ 265-276 nm, and high photoconductive gain of ≈2 × 10³ . A negative differential resistance effect is revealed for driving the rapid transfer of up-converted electrons between adjacent energy valleys (Γ to A) above the critical bias (3.9 V). The discovered rationale and device structure are expected to bring high-efficiency deep UV detecting and future wearable applications.

Band Gap Engineering of Newly Discovered ZnO/ZnS Polytypic Nanomaterials

We report on a new class of ZnO/ZnS nanomaterials based on the wurtzite/sphalerite architecture with improved electronic properties. Semiconducting properties of pristine ZnO and ZnS compounds and mixed ZnO1−xSx nanomaterials have been investigated using ab initio methods. In particular, we present the results of our theoretical investigation on the electronic structure of the ZnO1−xSx (x = 0.20, 0.25, 0.33, 0.50, 0.60, 0.66, and 0.75) nanocrystalline polytypes (2H, 3C, 4H, 5H, 6H, 8H, 9R, 12R, and 15R) calculated using hybrid PBE0 and HSE06 functionals. The main observations are the possibility of alternative polytypic nanomaterials, the effects of structural features of such polytypic nanostructures on semiconducting properties of ZnO/ZnS nanomaterials, the ability to tune the band gap as a function of sulfur content, as well as the influence of the location of sulfur layers in the structure that can dramatically affect electronic properties. Our study opens new fields of ZnO/ZnS band gap engineering on a multi-scale level with possible applications in photovoltaics, light-emitting diodes, laser diodes, heterojunction solar cells, infrared detectors, thermoelectrics, or/and nanostructured ceramics.

Self-connected CuO-ZnO radial core-shell heterojunction nanowire arrays grown on interdigitated electrodes for visible-light photodetectors

An original photodetector system based on self-connected CuO–ZnO radial core–shell heterojunction nanowire arrays grown on metallic interdigitated electrodes, operating as visible-light photodetector was developed by combining simple preparation approaches. Metallic interdigitated electrodes were fabricated on Si/SiO₂ substrates using a conventional photolithography process. Subsequently, a Cu layer was electrodeposited on top of the metallic interdigitated electrodes. The CuO nanowire arrays (core) were obtained by thermal oxidation in air of the Cu layer. Afterwards, a ZnO thin film (shell) was deposited by RF magnetron sputtering covering the surface of the CuO nanowires. The morphological, structural, compositional, optical, electrical and photoelectrical properties of the CuO nanowire arrays and CuO–ZnO core–shell nanowire arrays grown on metallic interdigitated electrodes were investigated. The performances of the devices were evaluated by assessing the figures of merit of the photodetectors based on self-connected CuO–ZnO core–shell heterojunction nanowire arrays grown on the metallic interdigitated electrodes. The radial p–n heterojunction formed between CuO and ZnO generates a type II band alignment that favors an efficient charge separation of photogenerated electron–hole pairs at the CuO–ZnO interface, suppressing their recombination and consequently enhancing the photoresponse and the photoresponsivity of the photodetectors. The electrical connections in the fabricated photodetector devices are made without any additional complex and time-consuming lithographic step through a self-connecting approach for CuO–ZnO core–shell heterojunction nanowire arrays grown directly onto the Ti/Pt metallic interdigitated electrodes. Therefore, the present study provides an accessible path for employing low dimensional complex structures in functional optoelectronic devices such as photodetectors.

Synthesis and solar blind photosensitivity of crystalline boron nanowires

Herein, single crystalline boron nanowires (BNWs) have been synthesized by chemical vapor transport using boron element as boron source, iodine as transport agent, and Au as catalyst. The results demonstrate that BNWs can be all formed at 600 °C-950 °C for 2 h, and possess rhombohedral crystal structure (β-boron). The NWs have diameters from several to hundreds of nanometers, and lengths from several to hundreds of microns. A single nanowire has been fabricated to field effect transistor (FET) which shows excellent solar blind photosensitivity and selectivity. The photo/dark current ratio and photoresponsitity is 1.14 and 97.6 mA W^-1at a bias of 5 V under light illumination of 254 nm with 0.42 mW cm^-2, respectively, and both the rising and decay time of the on-off currents are 4.6 s and 10.3 s, respectively. When the FET is used as a personal breath sensor, the ratio of exsufflating and inhaling currents is 2.7, rising and decay time of the breath currents are 0.4 s and 2.2 s, respectively. So the BNWs are important sense materials.

Ultrahigh-performance self-powered photodetectors based on hexagonal YbMnO3 ferroelectric thin films by the polarization-induced ripple effect

Ultrahigh photodetection performance is achieved in hexagonal YbMnO3-based self-powered photodetectors by tuning their domain and polarity interface through the sintering temperature.

Antisolvent-Processed One-Dimensional Ternary Rubidium Copper Bromine Microwires for Sensitive and Flexible Ultraviolet Photodetectors

Recently, newly emerging halide perovskites have aroused intensive attention in photoelectric fields in virtue of their good properties, such as well-balanced carrier transport, large light absorption coefficient, tunable band gap, and low-temperature solution processing technique. Nevertheless, their future commercial development is severely hampered by lead toxicity and instability of such materials. In this work, one-dimensional Rb₂CuBr₃ single-crystal microwires (MWs) were prepared by antisolvent engineering, and they were further employed as absorbers to prepare sensitive ultraviolet (UV) photodetectors. The optical band gap of Rb₂CuBr₃ MWs is measured to be 3.83 eV, exhibiting an excellent UV absorption. The fabricated device demonstrates a remarkable UV light detection ability with a specific detectivity of 1.23 × 10¹¹ Jones, responsivity of 113.64 mA W^-1, and response speed of 69.31/87.55 ms under light illumination of 265 nm. Meanwhile, the proposed photodetector without any encapsulation shows outstanding stability and repeatability. After storing in ambient air for 2 weeks, the light detection ability remains basically unchanged. Further, a flexible photodetector was fabricated with the same structure, which demonstrates a remarkable bending endurance. These results confirm the great potential of Rb₂CuBr₃ for high-performance UV photodetectors, increasing the possibility for assembly of optoelectronic systems.

Frequency stable dielectric constant with reduced dielectric loss of one-dimensional ZnO-ZnS heterostructures

The synthesis of one-dimensional heterostructures having high dielectric constant and low dielectric loss has remained a great challenge. Until now, the dielectric performance of ZnO-ZnS heterostructures was scarcely investigated. In this work, large-scale ZnO-ZnS heterostructures were synthesized by employing the chemical vapor deposition method. High resolution transmission electron microscopy (HRTEM) confirms the formation of heterostructures. X-ray photoelectron spectroscopy (XPS) shows that S atoms fill up the oxygen vacancy (V_O) in ZnO, leading to the suppression of charge carrier's movement from ZnO to ZnS; instead there is charge transfer from ZnS to ZnO. Conductivity mismatch between adjacent ZnO and ZnS materials leads to the accumulation of free charges at the interface of the heterostructure and can be considered as a capacitor-like structure. The electrical behaviors of the potential phases of ZnO, ZnS and the ZnO-ZnS heterostructure are well interpreted by a best fitted equivalent circuit model. Each heterostructure acts as a polarization node with a specific flip-flop frequency and all such nodes form continuous transmission of polarization, which jointly increase the dielectric energy-storage performance. The orientational polarization of the polarons and Zn²⁺-V_O dipoles present at the heterostructure interface contributes to the frequency stable dielectric constant at ≥10³ Hz. Our findings provide a systematic approach to tailor the electronic transport and dielectric properties at the interface of the heterostructure. We suggest that this approach can be extended for improving the energy harvesting, transformation and storage capabilities of the nanostructures for the development of high-performance energy-storage devices.

A direct dual Z-scheme 3DOM SnS2-ZnS/ZrO2 composite with excellent photocatalytic degradation and hydrogen production performance

A novel direct dual Z-scheme 3DOM (three-dimensional ordered macropores) SnS₂-ZnS/ZrO₂ composite was prepared by the template method combined with the in situ sulfur replacement technology. The composition, structure, morphology, and surface physicochemical properties of the composites were well characterized. The results indicate that it possesses a uniform and periodical macroporous structure, a large surface area (121.1 m² g^-1), broad visible light absorption, and high separation ability of photoinduced electron/hole pairs. 3DOM SnS₂-ZnS/ZrO₂ composite removed 96.8% of methyl orange within 210 min of simulated sunlight irradiation. Moreover, photocatalytic hydrogen production achieved the rate of 928.1 μmol g^-1, which was 66.3 times as high as that of the commercial P25 after 8 h simulated sunlight irradiation. The enhanced photocatalytic performance mainly attributed to the direct dual Z-scheme system, which improves the charge separation efficiency and optimizes the charge transfer pathway. The charge transfer mechanism over the 3DOM SnS₂-ZnS/ZrO₂ is discussed in detail based on the results of radical trapping experiments. Our work paves a new way to design 3DOM materials with direct dual Z-scheme structure.

Low-voltage and fast-response SnO2nanotubes/perovskite heterostructure photodetector

One-dimensional metal-oxides (1D-MO) nanostructure has been regarded as one of the most promising candidates for high-performance photodetectors due to their outstanding electronic properties, low-cost and environmental stability. However, the current bottlenecks are high energy consumption and relatively low sensitivity. Here, Schottky junctions between nanotubes (NTs) and FTO were fabricated by electrospinning SnO₂NTs on FTO glass substrate, and the bias voltage of SnO₂NTs photodetectors was as low as ∼1.76 V, which can effectively reduce energy consumption. Additionally, for improving the response and recovery speed of SnO₂NTs photodetectors, the NTs were covered with organic/inorganic hybrid perovskite. SnO₂NTs/perovskite heterostructure photodetectors exhibit fast response/recovery speed (∼0.075/0.04 s), and a wide optical response range (∼220-800 nm). At the same time, the bias voltage of heterostructure photodetectors was further reduced to 0.42 V. The outstanding performance is mainly attributed to the formation of type-II heterojunctions between SnO₂NTs and perovskite, which can facilitate the separation of photogenerated carriers, as well as Schottky junction between SnO₂NTs and FTO, which reduce the bias voltage. All the results indicate that the rational design of 1D-MO/perovskite heterostructure is a facile and efficient way to achieve high-performance photodetectors.

Recent Progress of Flexible Image Sensors for Biomedical Applications

Flexible image sensors have attracted increasing attention as new imaging devices owing to their lightness, softness, and bendability. Since light can measure inside information from outside of the body, optical-imaging-based approaches, such as X-rays, are widely used for disease diagnosis in hospitals. Unlike conventional sensors, flexible image sensors are soft and can be directly attached to a curved surface, such as the skin, for continuous measurement of biometric information with high accuracy. Therefore, they are expected to gain wide application to wearable devices, as well as home medical care. Herein, the application of such sensors to the biomedical field is introduced. First, their individual components, photosensors, and switching elements, are explained. Then, the basic parameters used to evaluate the performance of each of these elements and the image sensors are described. Finally, examples of measuring the dynamic and static biometric information using flexible image sensors, together with relevant real-world measurement cases, are presented. Furthermore, recent applications of the flexible image sensors in the biomedical field are introduced.

Great Enhancement Effect of 20-40 nm Ag NPs on Solar-Blind UV Response of the Mixed-Phase MgZnO Detector

High-performance solar-blind UV detector with high response and fast speed is needed in multiple types of areas, which is hard to achieve in one device with a simple structure and device fabrication process. Here, the effects of Ag nanoparticles (NPs) with different sizes on UV response characteristics of the device are studied, the Ag NPs with different sizes that are made from a simple vacuum anneal method. Ag NPs with different sizes could modulate the peak response position of the mixed-phase MgZnO detector from near UV range (350 nm) to deep UV range (235 nm), and the enhancement effect of the Ag NPs on the UV response differs much with the crystal structure and the basic UV response of the MgZnO thin film. When high density 20-40 nm Ag NPs is induced, the deep UV (235 nm) response of the mixed-phase MgZnO detector is increased by 226 times, the I _uv/I _dark ratio of the modified device is increased by 17.5 times. The slight enhancement in UV light intensity from 20 to 40 nm Ag NPs induces multiple tunnel breakdown phenomena within the mixed-phase MgZnO thin film, which is the main reason for the abnormal great enhancement effect on deep UV response of the device, so the recovery speed of the modified device is not influenced. Therefore, Ag NPs with different sizes could effectively modulate the UV response peak position of mixed-phase MgZnO thin films, and the introduction of Ag NPs with high density and small size is a simple way to greatly increase the sensitivity of the mixed-phase MgZnO detector at deep UV light without decreasing the device speed.

Comparison of Thermal Annealing versus Hydrothermal Treatment Effects on the Detection Performances of ZnO Nanowires

A comparative investigation of the post-electroplating treatment influence on the gas detecting performances of single ZnO nanorod/nanowire (NR/NW), as grown by electrochemical deposition (ECD) and integrated into nanosensor devices, is presented. In this work, hydrothermal treatment (HT) in a H₂O steam and conventional thermal annealing (CTA) in a furnace at 150 °C in ambient were used as post-growth treatments to improve the material properties. Herein, the morphological, optical, chemical, structural, vibrational, and gas sensing performances of the as-electrodeposited and treated specimens are investigated and presented in detail. By varying the growth temperature and type of post-growth treatment, the morphology is maintained, whereas the optical and structural properties show increased sample crystallization. It is shown that HT in H₂O vapors affects the optical and vibrational properties of the material. After investigation of nanodevices based on single ZnO NR/NWs, it was observed that higher temperature during the synthesis results in a higher gas response to H₂ gas within the investigated operating temperature range from 25 to 150 °C. CTA and HT or autoclave treatment showed the capability of a further increase in gas response of the prepared sensors by a factor of ∼8. Density functional theory calculations reveal structural and electronic band changes in ZnO surfaces as a result of strong interaction with H₂ gas molecules. Our results demonstrate that high-performance devices can be obtained with high-crystallinity NWs/NRs after HT. The obtained devices could be the key element for flexible nanoelectronics and wearable electronics and have attracted great interest due to their unique specifications.

Enhanced UV Photoresponsivity of ZnO Nanorods Decorated with Ag2S/ZnS Nanoparticles by Successive Ionic Layer Adsorption and Reaction Method

Recently, different kinds of energy band structures have been utilized to improve the photoelectric properties of zinc oxide (ZnO). In this work, ZnO nanorods were prepared by the hydrothermal method and then decorated with silver sulfide (Ag2S)/zinc sulfide (ZnS) via two-step successive ionic layer adsorption and reaction method. The photoelectric properties of nanocomposites are investigated. The results show that ZnO decorated with Ag2S/ZnS can improve the photocurrent of photodetectors from 0.34 to 0.56 A at bias of 9 V. With the immersion time increasing from 15 to 60 minutes, the photocurrent of photodetectors increases by 0.22 A. The holes in the valence band of ZnO can be transferred to the valence band of ZnS and Ag2S, which promotes the separation and suppresses the recombination of hole-electron pairs generated in ZnO. Moreover, electrons excited by ultraviolet (UV) light in Ag2S can also be injected into the conduction band of ZnO, which causes the photocurrent to increase more than the ZnO photodetector.

Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed

ZnO-based ultraviolet (UV) photodetector can be easily fabricated by using sol-gel spin-coating method, however, the crystallization of amorphous state ZnO thin films is necessary to fabricate high performance UV photodetector. Thus, we devised a thermal dissipation annealing (TDA) method in which the heat transfer to the ZnO thin films can be synchronized with the heat release from the substrate. It was found that sol-gel spin-coated ZnO thin films can be crystallized through the mobility difference of ZnO molecules placed at the surface of ZnO thin films. Also, UV photodetector based on ZnO thin films annealed with the TDA method exhibited faster rise and decay time constant (τ_r = 35 ms and τ_d = 73 ms, respectively), a higher on/off current ratio, and reproducible photocurrent characteristics compared to that of the ZnO thin films annealed by using furnace and IR lamp. Therefore, these results indicated that the TDA method is a feasible alternative route for the fabrication of ZnO based high performance optoelectronic devices.

Flexible, heat-resistant photodetector based on MoS2 nanosheets thin film on transparent muscovite mica substrate

Muscovite mica, a natural layered material with excellent flexibility and super flat surface, which can be well integrated into flexible optoelectronic devices. In addition to its ability to withstand higher temperatures than conventional flexible substrates, its natural high surface energy and hydrophilicity give muscovite mica a good adsorption capacity for two-dimensional materials. Here, we combined mica substrate with a thin film of MoS₂ nanosheets floating on the water surface to produce a flexible, heat-resistant photodetector. The device exhibits excellent response stability, superior flexibility and fast response time (976 ms of rise time and 161 ms of decay time). Moreover, the responsivity of 8.45 μA∙W^-1 and the detectivity of 4.1 × 10⁷ Jones are realized respectively. After 500 bending cycles, the photodetector still possesses the ability to output the photocurrent signal continuously and stably. What's more, the devices have a consistent performance after 300 °C bake, showing excellent stability and fast response. This work shows great potential for flexible photodetectors and contributed to the development of flexible optoelectronic devices from the room-temperature to heat-resistance practical applications.

Stability improvement of Cu(ii)-doped ZnS/ZnO photodetectors prepared with a facile solution-processing method

The solution-processed growth of Cu²⁺ doped ZnS as protective coatings on ZnO nanorods with improved photoresponsivity and stability was presented.

Crystallization of ZnO thin films without polymer substrate deformation via thermal dissipation annealing method for next generation wearable devices

The synthesis method of transparent and flexible ZnO thin films is currently considered the most important factor for the fabrication of next generation wearable devices. To fabricate transparent and flexible devices by using sol–gel spin-coated ZnO thin films, an annealing step is necessary; however, annealing processes at high temperatures decompose polymer substrates due to their low melting temperature. It was found that sol–gel spin-coated ZnO thin films can be crystallized through the mobility difference of ZnO molecules placed at the surface of ZnO thin films. Especially, ZnO thin films can be annealed at high temperature (above 500 °C) by using a thermal dissipation annealing (TDA) method without the deformation of the polymer substrate. A transparent and flexible ultraviolet photodetector based on ZnO thin films annealed with the TDA method exhibited fast rise and decay time constants, a high on/off current ratio, and reproducible photocurrent characteristics. Thus, these results indicated that the TDA method is a feasible alternative route for the fabrication of next generation wearable devices.

Thermal dissipation annealing method is an effective way of fabricating transparent and flexible optoelectronics for next generation wearable devices.

The Features of Phase Stability of GaN and AlN Films at Nanolevel

Recently, two-dimensional gallium and aluminum nitrides have triggered a vast interest in their tunable optical and electronic properties. Continuation of this research requires a detailed understanding of their atomic structure. Here, by using first-principles calculations we reported a systematic study of phase stability of 2D-GaN and 2D-AlN. We showed that the films undergo a phase transition from a graphene-like to a wurtzite structure with a thickness increase, whereas the early reported body-centered-tetragonal phase requires specific conditions for stabilization. Additionally, we studied how the functionalization of the surface can modify the film structure as exemplified by hydrogenation.

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.

Conical Microstructure Flexible High-Sensitivity Sensing Unit Adopting Chemical Corrosion

Sensor technology is one of the three pillars of information technology. This paper aims to discuss the problems of insensitive detection, poor stability, and uncomfortable wearing of sensors in the fields of human-computer interaction, 5G communication, and medical detection. A sensing unit with a microstructured flexible sensing front end is a cone-like structure with a single size of 18-22 μm. They are evenly distributed and can reach 2500 units per square millimeter. In the pressure range, the sensitivity of the sensor unit is 0.6 KPa-1 (no microstructure sensitivity at 0.15 KPa-1), and the response time is fast (<600 ms). After 400 repeated stretching experiments, the sensor unit can still maintain a stable output signal. Due to its flexible characteristics (50% tensile conductivity), the sensor unit can act on human skin and other curved surfaces. According to the prepared sensing unit, good test results can be obtained on the testing of mechanical devices, curved surfaces of human bodies, and non-contact methods. It is observed that the flexible sensor can be applied to various test occasions, and the manufacturing process of the sensing unit will provide new ideas and methods for the preparation of the flexible sensor technology.

Recent advances in solution-processed photodetectors based on inorganic and hybrid photo-active materials

Due to their excellent and tailorable optoelectronic performance, low cost, facile fabrication, and compatibility with flexible substrates, solution-processed inorganic and hybrid photo-active materials have attracted extensive interest for next-generation photodetector applications. This review gives a comprehensive compilation of solution-processed photodetectors. The basic structures of the device and important parameters of photodetectors will be firstly summarized. Then the development of various solution processing technologies containing solution synthesis and liquid phase film-forming processes for the preparation of semiconductor films is described. From the materials science point of view, we give a comprehensive overview about the current status of solution processed semiconductor materials including inorganic and hybrid photo-active materials for the application of photodetectors. Moreover, challenges and future trends in the field of solution-processed photodetectors are proposed.

A microwave-assisted template-free route for large-scale synthesis of photoluminescent single crystal CsPbI3 nanotubes

High-quality single crystalline CsPbI₃ nanotubes featuring highly uniform sizes and stable and bright photoluminescence were synthesized through a microwave-assisted synthetic approach.

An Organic/Inorganic Nanocomposite of Cellulose Nanofibers and ZnO Nanorods for Highly Sensitive, Reliable, Wireless, and Wearable Multifunctional Sensor Applications

Organic and inorganic one-dimensional nanomaterials were synthesized and combined into a nanocomposite film for a wearable sensor. Reproducible ZnO nanorod (NR) synthesis was achieved by the addition of an appropriate amount of water. Cellulose nanofibers (CNFs) were used due to their porous matrix formation. The interconnected channels of brittle ZnO NRs were well-fabricated in the flexible network of CNFs. The surface morphology, thermal, and mechanical properties of the CNF/ZnO NR nanocomposite film were characterized. The interfacial interactions between these two nanomaterials were also studied. The nanocomposite film is sufficiently flexible so that it shows no electrical resistance changes even after repeated bending tests with a minimum bending radius of 1.5 mm. In addition, ZnO NRs with different lengths were synthesized. The composite of longer ZnO NRs and CNF showed 2.8 × 10³ times higher photocurrent and responsivity performance. The humidity sensing performance of the composite was also suggested. The CNF/ZnO NR film shows reasonable electrical signal changes enabling the evaluation of a calibration curve. Finally, a smart band including a CNF/ZnO NR film sensor was fabricated and connected to a smartphone by Bluetooth. These results open an avenue for developing wearable sensors by overcoming the brittleness of inorganic materials.

Graphene-Based Mixed-Dimensional van der Waals Heterostructures for Advanced Optoelectronics

Although the library of 2D atomic crystals has greatly expanded over the past years, research into graphene is still one of the focuses for both academia and business communities. Due to its unique electronic structure, graphene offers a powerful platform for exploration of novel 2D physics, and has significantly impacted a wide range of fields including energy, electronics, and photonics. Moreover, the versatility of combining graphene with other functional components provides a powerful strategy to design artificial van der Waals (vdWs) heterostructures. Aside from the stacked 2D-2D vdWs heterostructure, in a broad sense graphene can hybridize with other non-2D materials through vdWs interactions. Such mixed-dimensional vdWs (MDWs) structures allow considerable freedom in material selection and help to harness the synergistic advantage of different dimensionalities, which may compensate for graphene's intrinsic shortcomings. A succinct overview of representative advances in graphene-based MDWs heterostructures is presented, ranging from assembly strategies to applications in optoelectronics. The scientific merit and application advantages of these hybrid structures are particularly emphasized. Moreover, considering possible breakthroughs in new physics and application potential on an industrial scale, the challenges and future prospects in this active research field are highlighted.

Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors

Currently, the development of ultraviolet (UV) photodetectors (PDs) has attracted the attention of the research community because of the vast range of applications of photodetectors in modern society. A variety of wide-band gap nanomaterials have been utilized for UV detection to achieve higher photosensitivity. Specifically, zinc oxide (ZnO) nanomaterials have attracted significant attention primarily due to their additional properties such as piezo-phototronic and pyro-phototronic effects, which allow the fabrication of high-performance and low power consumption-based UV PDs. This article primarily focuses on the recent development of ZnO nanostructure-based UV PDs ranging from nanomaterials to architectural device design. A brief overview of the photoresponse characteristics of UV PDs and potential ZnO nanostructures is presented. Moreover, the recent development in self-powered PDs and implementation of the piezo-phototronic effect, plasmonic effect and pyro-phototronic effect for performance enhancement is highlighted. Finally, the research perspectives and future research direction related to ZnO nanostructures for next-generation UV PDs are summarized.

Type-II ZnO/ZnS core-shell nanowires: Earth-abundant photoanode for solar-driven photoelectrochemical water splitting

A core-shell structure, formed in a nanostructured photoanode, is an effective strategy to achieve high solar-to-hydrogen conversion efficiency. In this study, we present a facile and simple synthesis of a unique vertically aligned ZnO/ZnS core-shell heterostructure nanowires (NWs) on a Si substrate. Well-aligned ZnO NWs were grown on Si (100) substrates on a low-temperature ZnO buffer layer by metal-organic chemical vapor deposition. The ZnO NWs were then coated with various thicknesses of ZnS shell layers using atomic layer deposition. The structural characterizations exhibit the well-developed ZnO/ZnS core-shell NWs heterostructure. The as-prepared ZnO/ZnS core-shell NWs was applied as photoanode for photoelectrochemical (PEC) water splitting. This unique ZnO/ZnS core-shell NWs photoanode shows photocurrent density of 1.21 mA cm^-2, which is 8.5 times higher than bare ZnO NWs. The PEC performance and the applied-bias-photon-to-current conversion efficiency of ZnO/ZnS core-shell NWs photoanode are further improved with the optimized ZnS shell. The type-II band alignment of the heterostructure photoanode is the key factor for their excellent PEC performance. Importantly, this type of core-shell NWs heterostructure provides useful insights into novel electrode design and fabrication based on earth abundant materials for low-cost solar fuel generation.

High performance blue light detector based on ZnO nanowire arrays

Organic-inorganic hybrid heterojunctions are ever so promising for low-cost and high-efficient photoelectric devices. We report a p-n junction diode composed of inorganic ZnO nanowire arrays (ZNAs) and organic 2, 2^', 7, 7^'-tetrakis-(N, N-di-p-methoxyphenylamine)- 9, 9^'-spirobifluorene (spiro-MeOTAD). A maximum photoresponsivity of 1.32 mA/W is observed under illumination at zero bias. We also demonstrate that the photocurrent time response is observed to be rapid, consistent, as well as repeatable. On blue light weak irradiance (410 nm, 75  μW/cm²), the rise time constant and decay time constant were found to be 0.12 and 0.06 s, respectively. These results suggest ZNAs/spiro-MeOTAD heterojunction as a candidate for an efficient self-powered blue light detector.

Stretchable, transparent and imperceptible supercapacitors based on Au@MnO2 nanomesh electrodes

A wearable supercapacitor achieved high transparency of 82.1% and an excellent areal capacitance of 0.53 mF cm⁻², together with high stretchability (160% strain).

2D AlN Layers Sandwiched Between Graphene and Si Substrates

Due to the superior thickness-dependent properties, 2D materials have exhibited great potential for applications in next-generation optoelectronic devices. Despite the significant progress that has been achieved, the synthesis of 2D AlN remains challenging. This work reports on the epitaxial growth of 2D AlN layers via utilizing physically transferred graphene on Si substrates by metal-organic chemical vapor deposition. The 2D AlN layers sandwiched between graphene and Si substrates are confirmed by annular bright-field scanning transmission electron microscopy and the effect of hydrogenation on the formation of 2D AlN layers is clarified by theoretical calculations with first-principles calculations based on density functional theory. Moreover, the bandgap of as-grown 2D AlN layers is theoretically predicted to be ≈9.63 eV and is experimentally determined to be 9.20-9.60 eV. This ultrawide bandgap semiconductor shows great promise in deep-ultraviolet optoelectronic applications. These results are expected to support innovative and front-end development of optoelectronic devices.

Branched CdO/ZnO Core/Shell Heterogeneous Structure and Its Enhanced Photoelectrocatalytic Performance

Branched nanostructures of semiconductors based on one-dimensional heterostructures have many promising applications in optoelectronics, supercapacitors, photocatalysts, etc. Here, we report a novel branched core/shell CdO/ZnO hetero-nanostructure that resembles a Crimson bottlebrush (Callistemon Citrinus) but with intriguing hexagonal symmetry. The nanomaterials were fabricated via an improved one-step chemical vapor deposition method and consist of a CdO wire as the core and ZnO as the shell. With cadmium acting as a catalyst, ZnO nanowires grow as perpendicular branches from the CdO/ZnO one-dimensional core/shell structure. The nanostructures were characterized with X-ray diffraction scanning and transmission electron microscopy. A homogeneous epitaxial growth mechanism has been postulated for the formation of the nanostructure. The materials show a broad and strong absorption ranging from visible to ultraviolet and a better photoelectrocatalytic properties in comparison to pure ZnO or CdO. Our synthetic strategy may open up a new way for controlled preparation of one-dimensional nanomaterials with core/shell heterostructure, which could find potential applications in solar cells and opto-electrochemical water-splitting devices.

Flexible multi-wavelength photodetector based on porous silicon nanowires

Porous silicon nanowires (PSi NWs) responding to red, green and blue lights simultaneously are reported in this study. NWs with a diameter of 120 nm were prepared from p-type Si wafer by metal-catalyst-assisted etching. The NWs produced in this manner had an outer porous region consisting of Si nanocrystals small enough to ensure the quantum confinement effect. Hydrazine treatment passivated the porous region by reduction of the surface oxides and the formation of Si-H bonds. The energy band structure of the porous region was a direct transition type, while the emission/absorption energies corresponded to red (1.94 eV), green (2.24 and 2.44 eV) and blue (2.98 eV) light photons. A device structure prepared by suspending 10 PSi NWs between two Al electrodes by dielectrophoresis generated photocurrents upon exposure to red, green and blue lights. The rising and decay times were both 30 μs and the ratio of photocurrent to dark current was 92.0, 59.8 and 24.4 for the blue, green and red lights, respectively. The device could be bent down to the bending radius of 5 mm without any significant deterioration of the photoresponse performances. Further, the device survived repeated bending and unbending over 10 000 cycles with this bending radius, demonstrating its application potential as a flexible device with multiple-wavelength photosensing capabilities.

High-Performance Flexible ZnO Nanorod UV/Gas Dual Sensors Using Ag Nanoparticle Templates

Flexible zinc oxide (ZnO) nanorod (NR) ultraviolet (UV)/gas dual sensors using silver (Ag) nanoparticle (NP) templates were successfully fabricated on a polyimide substrate with nickel electrodes. Arrays of Ag NPs were used as a template for the growth of ZnO NRs, which could enhance the flexibility and the sensing properties of the devices through the localized surface plasmon resonance (LSPR) effect. The Ag NPs were fabricated by the rapid thermal annealing process of Ag thin films, and ZnO NRs were grown on Ag NPs to maximize the surface area and form networks with rod-to-rod contacts. Because of the LSPR effect by Ag NPs, the UV photoresponse of the ZnO NRs was amplified and the depletion region of ZnO NRs was formed quickly because of the Schottky contact with the Ag NPs. As a consequence, ZnO NR UV/gas dual sensors grown on the Ag NP template with a diameter of 28 nm exhibited the outstanding UV-sensing characteristics with a UV on-off ratio of 3628 and a rising time ( t_r) and a decay time ( t_d) of 3.52 and 0.33 s upon UV exposure, along with excellent NO₂-sensing characteristics with a stable gas on-off ratio of 288.5 and a t_r and t_d of 38 and 62 s upon NO₂ exposure. Furthermore, the sensors grown on the Ag NP template exhibited good mechanical flexibility and stable sensing properties without significant degradation even after the bending test up to 10 000 cycles at the bending radius of 5 mm.

Ferroelectric Materials: A Novel Pathway for Efficient Solar Water Splitting

Over the past few decades, solar water splitting has evolved into one of the most promising techniques for harvesting hydrogen using solar energy. Despite the high potential of this process for hydrogen production, many research groups have encountered significant challenges in the quest to achieve a high solar-to-hydrogen conversion efficiency. Recently, ferroelectric materials have attracted much attention as promising candidate materials for water splitting. These materials are among the best candidates for achieving water oxidation using solar energy. Moreover, their characteristics are changeable by atom substitute doping or the fabrication of a new complex structure. In this review, we describe solar water splitting technology via the solar-to-hydrogen conversion process. We will examine the challenges associated with this technology whereby ferroelectric materials are exploited to achieve a high solar-to-hydrogen conversion efficiency.

Single-Step Selective Laser Writing of Flexible Photodetectors for Wearable Optoelectronics

The increasing demand for wearable optoelectronics in biomedicine, prosthetics, and soft robotics calls for innovative and transformative technologies that permit facile fabrication of compact and flexible photodetectors with high performance. Herein, by developing a single-step selective laser writing strategy that can finely tailor material properties through incident photon density control and lead to the formation of hierarchical hybrid nanocomposites, e.g., reduced graphene oxide (rGO)-zinc oxide (ZnO), a highly flexible and all rGO-ZnO hybrid-based photodetector is successfully constructed. The device features 3D ultraporous hybrid films with high photoresponsivity as the active detection layer, and hybrid nanoflakes with superior electrical conductivity as interdigitated electrodes. Benefitting from enhanced photocarrier generation because of the ultraporous film morphology, efficient separation of electron-hole pairs at rGO-ZnO heterojunctions, and fast electron transport by highly conductive rGO nanosheets, the photodetector exhibits high, linear, and reproducible responsivities to a wide range of ultraviolet (UV) intensities. Furthermore, the excellent mechanical flexibility and robustness enable the photodetector to be conformally attached to skin, thus intimately monitoring the exposure dosage of human body to UV light for skin disease prevention. This study advances the fabrication of flexible optoelectronic devices with reduced complexity, facilitating the integration of wearable optoelectronics and epidermal systems.

Doping controlled pyro-phototronic effect in self-powered zinc oxide photodetector for enhancement of photoresponse

The pyro-phototronic effect can be used in pyroelectric semiconductor materials to significantly contribute in enhancing the self-powered photoresponse of photodetectors (PDs) via modulation of the photogenerated charge density. The pyro-phototronic effect in zinc oxide (ZnO) nanorods (NRs) was exploited thoroughly by doping with halogen elements, such as fluorine, chlorine (Cl), bromine and iodine. Cl-doped ZnO NRs (Cl : ZnO NRs) induces a large number of free charge carriers to enhance the self-powered photoresponse behavior (nearly 333% enhancement in response current) due to the pyro-phototronic effect as compared to pristine ZnO NRs. Moreover, 405% enhancement in pyrocurrent was measured for the Cl : ZnO NRs PD under a ultraviolet illumination intensity of 3 mW cm^-2, as compared to 0.3 mW cm^-2, in the absence of external bias voltage. Furthermore, other photoresponse parameters such as responsivity, external quantum efficiency and specific detectivity are measured to be higher due to the pyro-phototronic effect. Therefore, this study reveals the direct use of the pyro-phototronic effect to enhance the self-powered photoresponse.

Single Plasmonic Structure Enhanced Dual-band Room Temperature Infrared Photodetection

Dual-band photodetection in mid- and near-wave infrared spectral bands is of scientific interest and technological importance. Most of the state-of-the-art mid-infrared photodetectors normally operate at low temperature and/or suffer from toxicity and high cost due to limitations of material properties and device structures. The capability of surface plasmons in confining electromagnetic waves into extremely small volume provides an opportunity for improving the performance for room temperature operation. Here, we report an n-InAsSb/n-GaSb heterostructure photodiode integrated with plasmonic two-dimensional subwavelength hole array (2DSHA) for room temperature two band photodetection. We demonstrate that with a properly designed 2DSHA, room temperature detectivities of the heterostructure device can be enhanced to ~1.4 × 10⁹ Jones and ~1.5 × 10¹¹ Jones for the two bands peaked at 3.4 μm and 1.7 μm, respectively. In addition, we study the photocurrent enhancement in both photoconductor and heterojunction modes in the same integrated structure. The demonstration of single 2DSHA enhanced heterojunction photodiode brings a step closer to high sensitivity room temperature devices and systems which require multiband absorption.

ZnS coating for enhanced environmental stability and improved properties of ZnO thin films

Low environmental stability of ZnO nanostructures in hydrophilic systems is a crucial factor limiting their practical applications. ZnO nanomaterials need surface passivation with different water-insoluble compounds. This study describes a one-step passivation process of polycrystalline ZnO films with ZnS as a facile method of ZnO surface coating. A simple sulfidation reaction was carried out in gas-phase H₂S and it resulted in formation of a ZnS thin layer on the ZnO surface. The ZnS layer not only inhibited the ZnO dissolving process in water but additionally improved its mechanical and electrical properties. After the passivation process, ZnO/ZnS films remained stable in water for over seven days. The electrical conductivity of the ZnO films increased about 500-fold as a result of surface defect passivation and the removal of oxygen molecules which can trap free carriers. The nanohardness and Young's modulus of the samples increased about 64% and 14%, respectively after the ZnS coating formation. Nanowear tests performed using nanoindentation methods revealed reduced values of surface displacements for the ZnO/ZnS system. Moreover, both ZnO and ZnO/ZnS films showed antimicrobial properties against Escherichia coli.

ZnS coating improves mechanical, electrical, antibacterial properties and environmental stability of ZnO nanofilms.

Fabrication of Bi19S27I3 nanorod cluster films for enhanced photodetection performance

Bi₁₉S₂₇I₃ nanorod cluster films are directly grown on rigid substrates for potential application in wide range photodetectors.

(1,4-Butyldiammonium)CdBr4: a layered organic–inorganic hybrid perovskite with a visible-blind ultraviolet photoelectric response

We report an organic–inorganic hybrid adopting two-dimensional layered perovskite, which shows a visible-blind ultraviolet photoelectric properties.

Photodetectors Based on Organic-Inorganic Hybrid Lead Halide Perovskites

Recent years have witnessed skyrocketing research achievements in organic-inorganic hybrid lead halide perovskites (OIHPs) in the photovoltaic field. In addition to photovoltaics, more and more studies have focused on OIHPs-based photodetectors in the past two years, due to the remarkable optoelectronic properties of OIHPs. This article summarizes the latest progress in this research field. To begin with, the factors influencing the performance of photodetectors are discussed, including both internal and external factors. In particular, the channel width and the incident power intensities should be taken into account to precisely and objectively evaluate and compare the output performance of different photodetectors. Next, photodetectors fabricated on single-component perovskites in terms of different micromorphologies are discussed, namely, 3D thin-film and single crystalline, 2D nanoplates, 1D nanowires, and 0D nanocrystals, respectively. Then, bilayer structured perovskite-based photodetectors incorporating inorganic and organic semiconductors are discussed to improve the optoelectronic performance of their pristine counterparts. Additionally, flexible OIHPs-based photodetectors are highlighted. Finally, a brief conclusion and outlook is given on the progress and challenges in the field of perovskites-based photodetectors.

Optical and Optoelectronic Property Analysis of Nanomaterials inside Transmission Electron Microscope

In situ transmission electron microscopy (TEM) allows one to investigate nanostructures at high spatial resolution in response to external stimuli, such as heat, electrical current, mechanical force and light. This review exclusively focuses on the optical, optoelectronic and photocatalytic studies inside TEM. With the development of TEMs and specialized TEM holders that include in situ illumination and light collection optics, it is possible to perform optical spectroscopies and diverse optoelectronic experiments inside TEM with simultaneous high resolution imaging of nanostructures. Optical TEM holders combining the capability of a scanning tunneling microscopy probe have enabled nanomaterial bending/stretching and electrical measurements in tandem with illumination. Hence, deep insights into the optoelectronic property versus true structure and its dynamics could be established at the nanometer-range precision thus evaluating the suitability of a nanostructure for advanced light driven technologies. This report highlights systems for in situ illumination of TEM samples and recent research work based on the relevant methods, including nanomaterial cathodoluminescence, photoluminescence, photocatalysis, photodeposition, photoconductivity and piezophototronics.

Flexible Photodetectors Based on Novel Functional Materials

Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.

Transformation from Film to Nanorod via a Sacrifical Layer: Pulsed Laser Deposition of ZnO for Enhancing Photodetector Performance

A novel fabrication method for single crystalline ZnO nanorods by pulsed laser deposition (PLD) using a chemical-bath-deposited ZnS seed layer is proposed. For the substrate temperature (T_s) lower than 700 °C, the PLD-ZnO showed a polycrystalline phase and film-type morphology, resulting from the ZnS seed layer with a cubic phase. However, the ZnS film became a sacrifical layer and single crystalline ZnO(002) nanorods can be achieved at T_s of 900 °C, where ZnS was decomposed to zinc metals and sulfur fumes. The transformation from ZnO film to nanorod microstructure was demonstrated with the change of ZnS layer into Zn grains. Enhanced performance of the metal-semiconductor-metal photodetectors were fabricated with ZnO/ZnS samples grown at T_s of 500, 700, and 900 °C. The responsivities (@1 V and 370 nm) of these three devices were 1.71, 6.35, and 98.67 A/W, while their UV-to-visible discrimination ratios were 7.2, 16.5, and 439.1, respectively. Obviously, a higher light-capturing efficiency was obtained in the 900 °C-grown ZnO/ZnS device owing to its one-dimensional nanostructure with high crystal quality. The results indicate PLD combined with a sacrifical nanostructure is a promising method for obtaining high-quality ZnO nanorods, which paves the way for the fabrication of high performance ZnO-based devices.