High-Precision Twist-Controlled Bilayer and Trilayer Graphene

Toward Clean 2D Materials and Devices: Recent Progress in Transfer and Cleaning Methods

Two-dimensional (2D) materials have tremendous potential to revolutionize the field of electronics and photonics. Unlocking such potential, however, is hampered by the presence of contaminants that usually impede the performance of 2D materials in devices. This perspective provides an overview of recent efforts to develop clean 2D materials and devices. It begins by discussing conventional and recently developed wet and dry transfer techniques and their effectiveness in maintaining material "cleanliness". Multi-scale methodologies for assessing the cleanliness of 2D material surfaces and interfaces are then reviewed. Finally, recent advances in passive and active cleaning strategies are presented, including the unique self-cleaning mechanism, thermal annealing, and mechanical treatment that rely on self-cleaning in essence. The crucial role of interface wetting in these methods is emphasized, and it is hoped that this understanding can inspire further extension and innovation of efficient transfer and cleaning of 2D materials for practical applications.

Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications

Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.

Angle-Resolved Optical Imaging of Interlayer Rotations in Twisted Bilayer Graphene

Twisted bilayer graphene (TBG) is a prototypical layered material whose properties are strongly correlated to interlayer coupling. The two stacked graphene layers with distinct orientations are investigated to generate peculiar optical and electronic phenomena. Thus, the rapid, reliable, and nondestructive twist angle identification technique is of essential importance. Here, we integrated the white light reflection spectra (WLRS), the Raman spectroscopy, and the transmission electron microscope (TEM) to propose a facile RGB optical imaging technique that identified the twist angle of the TBG in a large area intuitively with high efficiency. The RGB technique established a robust correlation between the interlayer rotation angle and the contrast difference in the RGB color channels of a standard optical image. The angle-resolved optical behavior is attributed to the absorption resonance matching with the separation of van Hove singularities in the density of states of the TBG. Our study thus developed a route to identify the rotation angle of stacked bilayer graphene by means of a straightforward optical method, which can be further applied in other stacked van der Waals layered materials.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Kagome Quantum Oscillations in Graphene Superlattices

Electronic spectra of solids subjected to a magnetic field are often discussed in terms of Landau levels and Hofstadter-butterfly-style Brown-Zak minibands manifested by magneto-oscillations in two-dimensional electron systems. Here, we present the semiclassical precursors of these quantum magneto-oscillations which appear in graphene superlattices at low magnetic field near the Lifshitz transitions and persist at elevated temperatures. These oscillations originate from Aharonov-Bohm interference of electron waves following open trajectories that belong to a kagome-shaped network of paths characteristic for Lifshitz transitions in the moire superlattice minibands of twistronic graphenes.

Dynamic topological domain walls driven by lithium intercalation in graphene

Stacking engineering in van der Waals (vdW) materials is a powerful method to control topological electronic phases for quantum device applications. Atomic intercalation into the vdW material can modulate the stacking structure at the atomic scale without a highly technical protocol. Here we report that lithium intercalation in a topologically structured graphene/buffer system on SiC(0001) drives dynamic topological domain wall (TDW) motions associated with stacking order change by using an in situ aberration-corrected low-energy electron microscope in combination with theoretical modelling. We observe sequential and selective lithium intercalation that starts at topological crossing points (AA stacking) and then selectively extends to AB stacking domains. Lithium intercalation locally changes the domain stacking order to AA and in turn alters the neighbouring TDW stacking orders, and continuous intercalation drives the evolution of the whole topological structure network. Our work reveals moving TDWs protected by the topology of stacking and lays the foundation for controlling the stacking structure via atomic intercalation. These findings open up new avenues to realize intercalation-driven vdW electronic devices.

Tunable Optical Activity in Twisted Anisotropic Two-Dimensional Materials

Twisted van der Waals structures exhibit a variety of unusual electrical and optical phenomena and could provide a powerful means for designing nanodevices with tunable chiral properties. However, programming intrinsic chiral properties of the film on the atomic scale remains a great challenge due to the limitations of fabrication and measurement techniques. Here, we report a highly tunable large optical activity of twisted anisotropic two-dimensional (2D) materials, including black phosphorus (BP), ReS2, PdSe2, and α-MoO3, by varying the twist angle between the stacked layers. The chirality can be deliberately tailored through the engineering of the symmetry, band structure, and anisotropy of 2D materials, demonstrating the high tunability of the chirality. The results show the highest thickness-normalized ellipticity value (13.8 deg μm-1, twisted ReS2) and ellipticity value (1581 mdeg, twisted BP) among the systems based on 2D materials. It is also shown that the chiroptical response exists in an extremely large spectral range from the visible to the infrared. Furthermore, the twisted ReS2 enabled spin-selective control of the information transformation. These results show that highly controllable chirality in twisted 2D anisotropic materials has considerable potential in on-chip polarization optics, nano-optoelectronics, and biology.

Fast Twist Angle Mapping of Bilayer Graphene Using Spectroscopic Ellipsometric Contrast Microscopy

Twisted bilayer graphene provides an ideal solid-state model to explore correlated material properties and opportunities for a variety of optoelectronic applications, but reliable, fast characterization of the twist angle remains a challenge. Here we introduce spectroscopic ellipsometric contrast microscopy (SECM) as a tool for mapping twist angle disorder in optically resonant twisted bilayer graphene. We optimize the ellipsometric angles to enhance the image contrast based on measured and calculated reflection coefficients of incident light. The optical resonances associated with van Hove singularities correlate well to Raman and angle-resolved photoelectron emission spectroscopy, confirming the accuracy of SECM. The results highlight the advantages of SECM, which proves to be a fast, nondestructive method for characterization of twisted bilayer graphene over large areas, unlocking process, material, and device screening and cross-correlative measurement potential for bilayer and multilayer materials.

Strong Interlayer Coupling in Twisted Transition Metal Dichalcogenide Moiré Superlattices

Moiré superlattices in twisted van der Waals materials offer a powerful platform for exploring light-matter interactions. The periodic moiré potentials in moiré superlattices can induce strongly correlated quantum phenomena that depend on the moiré potential associated with interlayer coupling at the interface. However, moiré superlattices are primarily prepared by mechanical exfoliation and manual stacking, where the transfer methods easily cause interfacial contamination, and the preparation of high-quality bilayer 2D materials with small twist angles by growth methods remains a significant challenge. In this work, WSe₂ /WSe₂ homobilayers with different twist angles by chemical vapor deposition (CVD), using a heteroatom-assisted growth technique, are synthesized. Using low-frequency Raman scattering, the uniformity of the moiré superlattices is mapped to demonstrate the strong interfacial coupling of the CVD-fabricated twist-angle homobilayers. The moiré potential depths of the CVD-grown and artificially stacked homostructures with twist angles of 1.5° are 115 and 45 meV (an increase of 155%), indicating that the depth of moiré potential can be modulated by the interfacial coupling. These results open a new avenue to study the modulation of moiré potential by strong interlayer coupling and provide a foundation for the development of twistronics.

Heterostrain and temperature-tuned twist between graphene/h-BN bilayers

Two-dimensional materials stacked atomically at small twist angles enable the modification of electronic states, motivating twistronics. Here, we demonstrate that heterostrain can rotate the graphene flake on monolayer h-BN within a few degrees (- 4° to 4°), and the twist angle stabilizes at specific values with applied constant strains, while the temperature effect is negligible in 100-900 K. The band gaps of bilayers can be modulated from ~ 0 to 37 meV at proper heterostrain and twist angles. Further analysis shows that the heterostrain modulates the interlayer energy landscape by regulating Moiré pattern evolution. The energy variation is correlated with the dynamic instability of different stacking modes of bilayers, and arises from the fluctuation of interlayer repulsive interaction associated with p-orbit electrons. Our results provide a mechanical strategy to manipulate twist angles of graphene/h-BN bilayers, and may facilitate the design of rotatable electronic nanodevices.

Preparation, properties and applications of two-dimensional superlattices

As a combination concept of a 2D material and a superlattice, two-dimensional superlattices (2DSs) have attracted increasing attention recently. The natural advantages of 2D materials in their properties, dimension, diversity and compatibility, and their gradually improved technologies for preparation and device fabrication serve as solid foundations for the development of 2DSs. Compared with the existing 2D materials and even their heterostructures, 2DSs relate to more materials and elaborate architectures, leading to novel systems with more degrees of freedom to modulate material properties at the nanoscale. Here, three typical types of 2DSs, including the component, strain-induced and moiré superlattices, are reviewed. The preparation methods, properties and state-of-the-art applications of each type are summarized. An outlook of the challenges and future developments is also presented. We hope that this work can provide a reference for the development of 2DS-related research.

One Dimensional Twisted Van der Waals Structures Constructed by Self-Assembling Graphene Nanoribbons on Carbon Nanotubes

Twisted van der Waals heterostructures were recently found to possess unique physical properties, such as superconductivity in magic angle bilayer graphene. Owing to the nonhomogeneous stacking, the energy of twisted van der Waals heterostructures are often higher than their AA or AB stacking counterpart, therefore, fabricating such structures remains a great challenge in experiments. On the other hand, one dimensional (1D) coaxial van der Waals structures has less freedom to undergo phase transition, thus offer opportunity for fabricating the 1D cousin of twisted bilayer graphene. In this work, we show by molecular dynamic simulations that graphene nanoribbons can self-assemble onto the surface of carbon nanotubes driven by van der Waals interactions. By modifying the size of the carbon nanotubes or graphene nanoribbons, the resultant configurations can be controlled. Of particular interest is the formation of twisted double walled carbon nanotubes whose chiral angle difference can be tuned, including the 1.1° magic angle. Upon the longitudinal unzipping of such structures, twisted bilayer graphene nanoribbons can be obtained. As the longitudinal unzipping of carbon nanotubes is a mature technique, we expect the strategy proposed in this study to stimulate experimental efforts and promote the fast growing research in twistronics.

Influence of Twist-Angle and Concentration Disorder on the Density of Electronic States of Twisted Graphene

In this paper, we present an approach that makes it possible to describe, from unified physical considerations, the influence of rotation-angle and concentration disorder on the density of electronic states of two-layer twisted graphene. The electron relaxation time and the density of electronic states near the Fermi level are calculated by considering the multiple elastic scattering of electrons by impurities and structural inhomogeneities of the short-range order type. An analysis is presented of the change in the contributions to the density of electronic states from electron scattering on foreign atoms with variations in the defectiveness of the structure, impurity concentration, temperature, and the external electric field magnitude. It is shown that the formation of short-range order areas by foreign atoms in the first coordination sphere relative to the surface of the material can lead to the opening of a gap in the density of electronic states of twisted graphene. Point defects and short-range order regions formed by foreign atoms in the second coordination sphere lead to metallization of twisted graphene.

Reproducibility in the fabrication and physics of moiré materials

Overlaying two atomic layers with a slight lattice mismatch or at a small rotation angle creates a moiré superlattice, which has properties that are markedly modified from (and at times entirely absent in) the 'parent' materials. Such moiré materials have progressed the study and engineering of strongly correlated phenomena and topological systems in reduced dimensions. The fundamental understanding of the electronic phases, such as superconductivity, requires a precise control of the challenging fabrication process, involving the rotational alignment of two atomically thin layers with an angular precision below 0.1 degrees. Here we review the essential properties of moiré materials and discuss their fabrication and physics from a reproducibility perspective.

Developing Graphene-Based Moiré Heterostructures for Twistronics

Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.

Monolayer Twisted Graphene-Based Schottky Transistor

The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the I_D-V_GS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

Tunable Optical Rotation in Twisted Black Phosphorus

Black phosphorus (BP) is a typical two-dimensional (2D) layered material with strong in-plane anisotropy and large birefringence, making it possible to manipulate the light field with atomically controlled devices for various optoelectronic and photonic applications-for instance, atomic thickness waveplates. The twist angle in twisted black phosphorus (TBP) can be presented as a new tunable dimension to control BP's optical anisotropy. Here, we report a large and tunable optical rotation effect in TBP, the result of regulating the twist angle and BP thickness. To accurately study the optical rotation and the impact of the twist angle, we developed a new method to prepare TBP. A lab-made polarimeter microscope was used to visualize the optical rotation mapping of TBP. A large polarization-plane rotation (PORA) of 0.49° per atomic layer was observed from an air/BP/SiO₂/Si Fabry-Pérot cavity at 600 nm, an order of magnitude higher than the PORA of 0.05° per atomic layer reported earlier. For the same thickness, the PORA of TBP can be tuned from 0.48° to 7.75° based on the twist angle from 0° to 90°. Our work provides an efficient method to investigate the anisotropy of 2D materials and their heterojunctions. TBP could help us design novel optical and optoelectronic devices such as tunable nanoscale polarization controllers.

Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties

Twisted bilayer graphene (tBLG) exhibits a host of innovative physical phenomena owing to the formation of moiré superlattice. Especially, the discovery of superconducting behavior has generated new interest in graphene. The growing studies of tBLG mainly focus on its physical properties, while the fabrication of high-quality tBLG is a prerequisite for achieving the desired properties due to the great dependence on the twist angle and the interfacial contact. Here, the cutting-edge preparation strategies and challenges of tBLG fabrication are reviewed. The advantages and disadvantages of chemical vapor deposition, epitaxial growth on silicon carbide, stacking monolayer graphene, and folding monolayer graphene methods for the fabrication of tBLG are analyzed in detail, providing a reference for further development of preparation methods. Moreover, the characterization methods of twist angle for the tBLG are presented. Then, the unique physicochemical properties and corresponding applications of tBLG, containing correlated insulating and superconducting states, ferromagnetic state, soliton, enhanced optical absorption, tunable bandgap, and lithium intercalation and diffusion, are described. Finally, the opportunities and challenges for fabricating high-quality and large-area tBLG are discussed, unique physical properties are displayed, and new applications inferred from its angle-dependent features are explored, thereby impelling the commercialization of tBLG from laboratory to market.

Preparation of Twisted Bilayer Graphene via the Wetting Transfer Method

Assembling monolayers into a bilayer system unlocks the rotational free degree of van der Waals (vdW) homo/heterostructure, enabling the building of twisted bilayer graphene (tBLG) which possesses novel electronic, optical, and mechanical properties. Previous methods for preparation of homo/heterstructures inevitably leave the polymer residue or hexagonal boron nitride (h-BN) mask, which usually obstructs the measurement of intrinsic mechanical and surface properties of tBLG. Undoubtedly, to fabricate the designable tBLG with clean interface and surface is necessary but challenging. Here, we propose a simple and handy method to prepare atomically clean twisted bilayer graphene with controllable twist angles based on wetting-induced delamination. This method can transfer tBLG onto a patterned substrate, which offers an excellent platform for the observation of physical phenomena such as relaxation of moiré pattern in marginally tBLG. These findings and insight should ultimately guide the designable packaging and atomic characterization of the two-dimensional (2D) materials.

Twistronics in Graphene, from Transfer Assembly to Epitaxy

The twistronics, which is arising from the moiré superlattice of the small angle between twisted bilayers of 2D materials like graphene, has attracted much attention in the field of 2D materials and condensed matter physics. The novel physical properties in such systems, like unconventional superconductivity, come from the dispersionless flat band that appears when the twist reaches some magic angles. By tuning the filling of the fourfold degeneracy flat bands, the desired effects are induced due to the strong correlation of the degenerated Bloch electrons. In this article, we review the twistronics in twisted bi- and multi-layer graphene (TBG and TMG), which is formed both by transfer assembly of exfoliated monolayer graphene and epitaxial growth of multilayer graphene on SiC substrates. Starting from a brief history, we then introduce the theory of flat band in TBG. In the following, we focus on the major achievements in this field: (a) van Hove singularities and charge order; (b) superconductivity and Mott insulator in TBG and (c) transport properties in TBG. In the end, we give the perspective of the rising materials system of twistronics, epitaxial multilayer graphene on the SiC.

Opportunities and Challenges in Twisted Bilayer Graphene: A Review

Two-dimensional (2D) materials exhibit enhanced physical, chemical, electronic, and optical properties when compared to those of bulk materials. Graphene demands significant attention due to its superior physical and electronic characteristics among different types of 2D materials. The bilayer graphene is fabricated by the stacking of the two monolayers of graphene. The twisted bilayer graphene (tBLG) superlattice is formed when these layers are twisted at a small angle. The presence of disorders and interlayer interactions in tBLG enhances several characteristics, including the optical and electrical properties. The studies on twisted bilayer graphene have been exciting and challenging thus far, especially after superconductivity was reported in tBLG at the magic angle. This article reviews the current progress in the fabrication techniques of twisted bilayer graphene and its twisting angle-dependent properties.

Chemical Route to Twisted Graphene, Graphene Oxide and Boron Nitride

The recently discovered twisted graphene has attracted considerable interest. A simple chemical route was found to prepare twisted graphene by covalently linking layers of exfoliated graphene containing surface carboxyl groups with an amine-containing linker (trans-1,4-diaminocyclohexane). The twisted graphene shows the expected selected area electron diffraction pattern with sets of diffraction spots out with different angular spacings, unlike graphene, which shows a hexagonal pattern. Twisted multilayer graphene oxide could be prepared by the above procedure. Twisted boron nitride, prepared by cross-linking layers of boron nitride (BN) containing surface amino groups with oxalic acid linker, exhibited a diffraction pattern comparable to that of twisted graphene. First-principles DFT calculations threw light on the structures and the nature of interactions associated with twisted graphene/BN obtained by covalent linking of layers.

Twist-Dependent Raman and Electron Diffraction Correlations in Twisted Multilayer Graphene

Twisted multilayer graphene (tMLG), in contrast to twisted bilayer graphene, offers a range of angular rotations for tuning the properties of the system. In this work, a turbostratic graphene system with a high degree of two-dimensional (2D) crystallinity is chosen to represent tMLG. We have investigated the distribution and population of twist angles from distributed sextets in electron diffraction (SAED) patterns with the collective Raman behavior at the same locations. A descriptor, termed the turbostratic factor, was calculated on the basis of angular spacings in SAEDs, to account for their distribution; the greater the spread, the higher the turbostratic factor. Raman spectra have revealed that the turbostratic factor remains low (∼0°) for a graphitic region with a low 2D to G intensity ratio (I_2D/I_G) and increases rapidly at higher I_2D/I_G values, saturating at 60° for highly turbostratic systems. Relating the intensities associated with the sextets and I_2D/I_G values, we found the maximum achievable value of I_2D/I_G to be 17.92.

A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS₂, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.

Pattern Pick and Place Method for Twisted Bi- and Multi-Layer Graphene

Twisted bi-layer graphene (tBLG) has attracted much attention because of its unique band structure and properties. The properties of tBLG vary with small differences in the interlayer twist angle, but it is difficult to accurately adjust the interlayer twist angle of tBLG with the conventional fabrication method. In this study, we introduce a facile tBLG fabrication method that directly picks up a single-crystalline graphene layer from a growth substrate and places it on another graphene layer with a pre-designed twist angle. Using this approach, we stacked single-crystalline graphene layers with controlled twist angles and thus fabricated tBLG and twisted multi-layer graphene (tMLG). The structural, optical and electrical properties depending on the twist angle and number of layers, were investigated using transmission electron microscopy (TEM), micro–Raman spectroscopy, and gate-dependent sheet resistance measurements. The obtained results show that the pick and place approach enables the direct dry transfer of the top graphene layer on the as-grown graphene to fabricate uniform tBLG and tMLG with minimal interlayer contamination and pre-defined twist angles.

Superlattice in collapsed graphene wrinkles

Topographic corrugations, such as wrinkles, are known to introduce diverse physical phenomena that can significantly modify the electrical, optical and chemical properties of two-dimensional materials. This range of assets can be expanded even further when the crystal lattices of the walls of the wrinkle are aligned and form a superlattice, thereby creating a high aspect ratio analogue of a twisted bilayer or multilayer – the so-called twisted wrinkle. Here we present an experimental proof that such twisted wrinkles exist in graphene monolayers on the scale of several micrometres. Combining atomic force microscopy and Raman spectral mapping using a wide range of visible excitation energies, we show that the wrinkles are extremely narrow and their Raman spectra exhibit all the characteristic features of twisted bilayer or multilayer graphene. In light of a recent breakthrough – the superconductivity of a magic-angle graphene bilayer, the collapsed wrinkles represent naturally occurring systems with tuneable collective regimes.

Atomic-Scale Structural Modification of 2D Materials

2D materials have attracted much attention since the discovery of graphene in 2004. Due to their unique electrical, optical, and magnetic properties, they have potential for various applications such as electronics and optoelectronics. Owing to thermal motion and lattice growth kinetics, different atomic-scale structures (ASSs) can originate from natural or intentional regulation of 2D material atomic configurations. The transformations of ASSs can result in the variation of the charge density, electronic density of state and lattice symmetry so that the property tuning of 2D materials can be achieved and the functional devices can be constructed. Here, several kinds of ASSs of 2D materials are introduced, including grain boundaries, atomic defects, edge structures, and stacking arrangements. The design strategies of these structures are also summarized, especially for atomic defects and edge structures. Moreover, toward multifunctional integration of applications, the modulation of electrical, optical, and magnetic properties based on atomic-scale structural modification are presented. Finally, challenges and outlooks are featured in the aspects of controllable structure design and accurate property tuning for 2D materials with ASSs. This work may promote research on the atomic-scale structural modification of 2D materials toward functional applications.

Electrons dynamics control by shaping femtosecond laser pulses in micro/nanofabrication: modeling, method, measurement and application

During femtosecond laser fabrication, photons are mainly absorbed by electrons, and the subsequent energy transfer from electrons to ions is of picosecond order. Hence, lattice motion is negligible within the femtosecond pulse duration, whereas femtosecond photon-electron interactions dominate the entire fabrication process. Therefore, femtosecond laser fabrication must be improved by controlling localized transient electron dynamics, which poses a challenge for measuring and controlling at the electron level during fabrication processes. Pump-probe spectroscopy presents a viable solution, which can be used to observe electron dynamics during a chemical reaction. In fact, femtosecond pulse durations are shorter than many physical/chemical characteristic times, which permits manipulating, adjusting, or interfering with electron dynamics. Hence, we proposed to control localized transient electron dynamics by temporally or spatially shaping femtosecond pulses, and further to modify localized transient materials properties, and then to adjust material phase change, and eventually to implement a novel fabrication method. This review covers our progresses over the past decade regarding electrons dynamics control (EDC) by shaping femtosecond laser pulses in micro/nanomanufacturing: (1) Theoretical models were developed to prove EDC feasibility and reveal its mechanisms; (2) on the basis of the theoretical predictions, many experiments are conducted to validate our EDC-based femtosecond laser fabrication method. Seven examples are reported, which proves that the proposed method can significantly improve fabrication precision, quality, throughput and repeatability and effectively control micro/nanoscale structures; (3) a multiscale measurement system was proposed and developed to study the fundamentals of EDC from the femtosecond scale to the nanosecond scale and to the millisecond scale; and (4) As an example of practical applications, our method was employed to fabricate some key structures in one of the 16 Chinese National S&T Major Projects, for which electron dynamics were measured using our multiscale measurement system.

Mid-infrared Plasmonic Circular Dichroism Generated by Graphene Nanodisk Assemblies

It is very interesting to bring plasmonic circular dichroism spectroscopy to the mid-infrared spectral interval, and there are two reasons for this. This spectral interval is very important for thermal bioimaging, and simultaneously, this spectral range includes vibrational lines of many chiral biomolecules. Here we demonstrate that graphene plasmons indeed offer such opportunity. In particular, we show that chiral graphene assemblies consisting of a few graphene nanodisks can generate strong circular dichroism (CD) in the mid-infrared interval. The CD signal is generated due to the plasmon-plasmon coupling between adjacent nanodisks in the specially designed chiral graphene assemblies. Because of the large dimension mismatch between the thickness of a graphene layer and the incoming light's wavelength, three-dimensional configurations with a total height of a few hundred nanometers are necessary to obtain a strong CD signal in the mid-infrared range. The mid-infrared CD strength is mainly governed by the total dimensions (total height and helix scaffold radius) of the graphene nanodisk assembly and by the plasmon-plasmon interaction strength between its constitutive nanodisks. Both positive and negative CD bands can be observed in the graphene assembly array. The frequency interval of the plasmonic CD spectra overlaps with the vibrational modes of some important biomolecules, such as DNA and many different peptides, giving rise to the possibility of enhancing the vibrational optical activity of these molecular species by attaching them to the graphene assemblies. Simultaneously the spectral range of chiral mid-infrared plasmons in our structures appears near the typical wavelength of the human-body thermal radiation, and therefore, our chiral metastructures can be potentially utilized as optical components in thermal imaging devices.

Raman Radial Mode Revealed from Curved Graphene

One of the unsolved fundamental issues of graphene is establishing an appropriate way to discern layers of graphene structures. We report a simple methodology to analyze graphene structures using Raman signals in the range of ∼100 to ∼500 cm^-1 comprising clear 118 or 175 cm^-1 peaks. We demonstrate that the low-energy signals on Raman spectra of plasma-seeded grown graphene sheets originated from nanocurvature (c) of mono- (175 and 325-500 cm^-1 signals) (c ≈ 1 nm) and bilayer (118 cm^-1 peak) (c ≈ 2 nm) graphene with Raman simulations, based on Raman radial mode (RM) Eigen vectors. Our RM model provides a standard way of identifying and evaluating graphene structures.

Mapping of Bernal and non-Bernal stacking domains in bilayer graphene using infrared nanoscopy

Bilayer graphene (BLG) shows great potential as a new material for opto-electronic devices because its bandgap can be controlled by varying the stacking orders, as well as by applying an external electric field. An imaging technique that can visualize and characterize various stacking domains in BLG may greatly help in fully utilizing such properties of BLG. Here we demonstrate that infrared (IR) scattering-type scanning near-field optical microscopy (sSNOM) can visualize Bernal and non-Bernal stacking domains of BLG, based on the stacking-specific inter- and intra-band optical conductivities. The method enables nanometric mapping of stacking domains in BLG on dielectric substrates, augmenting current limitations of Raman spectroscopy and electron microscopy techniques for the structural characterization of BLG.

The Nature of Metastable AA' Graphite: Low Dimensional Nano- and Single-Crystalline Forms

Over the history of carbon, it is generally acknowledged that Bernal AB stacking of the sp² carbon layers is the unique crystalline form of graphite. The universal graphite structure is synthesized at 2,600~3,000 °C and exhibits a micro-polycrystalline feature. In this paper, we provide evidence for a metastable form of graphite with an AA' structure. The non-Bernal AA' allotrope of graphite is synthesized by the thermal- and plasma-treatment of graphene nanopowders at ~1,500 °C. The formation of AA' bilayer graphene nuclei facilitates the preferred texture growth and results in single-crystal AA' graphite in the form of nanoribbons (1D) or microplates (2D) of a few nm in thickness. Kinetically controlled AA' graphite exhibits unique nano- and single-crystalline feature and shows quasi-linear behavior near the K-point of the electronic band structure resulting in anomalous optical and acoustic phonon behavior.