Baromagnetic Effect in Antiperovskite Mn3 Ga0.95 N0.94 by Neutron Powder Diffraction Analysis

Phase transitions associated with magnetic-field induced topological orbital momenta in a non-collinear antiferromagnet

Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in polycrystalline materials. Here we show that in polycrystalline Mn3Zn0.5Ge0.5N with non-collinear antiferromagnetic order, changes in the diagonal and, rather unexpected, off-diagonal components of the resistivity tensor occur at low temperatures indicating subtle transitions between magnetic phases of different symmetry. This is supported by neutron scattering and explained within a phenomenological model which suggests that the phase transitions in magnetic field are associated with field induced topological orbital momenta. The fact that we observe transitions between spin phases in a polycrystal, where effects of crystalline anisotropy are cancelled suggests that they are only controlled by exchange interactions. The observation of an off-diagonal resistivity extends the possibilities for realising antiferromagnetic spintronics with polycrystalline materials.

Diverse Thermal Expansion Behaviors in Ferromagnetic Cr1-δTe with NiAs-Type, Defective Structures

Negative thermal expansion (NTE) and zero thermal expansion (ZTE) properties are of great significance for the long-life stable operation of precision equipment. However, there are still existing challenges in finding new materials that exhibit NTE or ZTE over a wide temperature range. Here, we report negative, zero, and positive thermal expansion in NiAs-type, defective Cr_1-δTe, containing three compounds: hexagonal CrTe, monoclinic Cr₃Te₄, and trigonal Cr₅Te₈. CrTe shows the NTE behavior from 280 to 340 K with the volume coefficient of thermal expansion α_V = -27.6 × 10^-6 K^-1. Cr₃Te₄ shows the ZTE behavior over a wide temperature range of 180-320 K (α_V = 0.16 × 10^-6 K^-1). And Cr₅Te₈ holds the PTE behavior over the whole temperature range (α_V = 38.5 × 10^-6 K^-1). All of the samples show obvious anisotropic thermal expansion on heating. Combined with the magnetic measurements, it can be confirmed that the NTE and ZTE properties in ferromagnetic Cr_1-δTe originate from the magnetovolume effect (MVE). Such NiAs-type, defective compounds with similar compositions but different structures provide a new perspective for tuning the NTE properties of materials and searching for new materials with ZTE over a wide temperature range.

Transition metal nitrides and their mixed crystals for spintronics

Anti-perovskite transition metal nitrides exhibit a variety of magnetic properties-such as ferromagnetic, ferrimagnetic, and paramagnetic-depending on the 3dtransition metal. Fe₄N and Co₄N are ferromagnetic at room temperature (RT), and the minority spins play a dominant role in the electrical transport properties. However, Mn₄N is ferrimagnetic at RT and exhibits a perpendicular magnetic anisotropy caused by tensile strain. Around the magnetic compensation in Mn₄N induced by impurity doping, researchers have demonstrated ultrafast current-induced domain wall motion reaching 3000 m s^-1at RT, making switching energies lower and switching speed higher compared with Mn₄N. In this review article, we start with individual magnetic nitrides-such as Fe₄N, Co₄N, Ni₄N, and Mn₄N; describe the nitrides' features; and then discuss compounds such as Fe_4-xA_xN (A = Co, Ni, and Mn) and Mn_4-xB_xN (B = Ni, Co, and Fe) to evaluate nitride properties from the standpoint of spintronics applications. We pay particular attention to preferential sites of A and B atoms in these compounds, based on x-ray absorption spectroscopy and x-ray magnetic circular dichroism.

A Distinct Spin Structure and Giant Baromagnetic Effect in MnNiGe Compounds with Fe-Doping

Spin structure of a magnetic system results from the competition of various exchange couplings. Pressure-driven spin structure evolution, through altering interatomic distance, and hence, electronic structure produces baromagnetic effect (BME), which has potential applications in sensor/actuator field. Here, we report a new spin structure(CyS-AFM^b) with antiferromagnetic(AFM) nature in Fe-doped Mn_0.87Fe_0.13NiGe. Neutron powder diffraction (NPD) under in situ hydrostatic pressure and magnetic field was conducted to reveal the spin configuration and its instabilities. We discovered that a pressure higher than 4 kbar can induce abnormal change of Mn(Fe)-Mn(Fe) distances and transform the CyS-AFM^b into a conical spiral ferromagnetic(FM) configuration(45°-CoS-FM^a) with easily magnetized but shortened magnetic moment by as much as 22%. The observed BME far exceeds previous reports. Our first-principles calculations provide theoretical supports for the enhanced BME. The compressed lattice by pressure favors the 45°-CoS-FM^a and significantly broadened 3d bandwidth of Mn(Fe) atoms, which leads to the shortened magnetic moment and evolution of spin structure.

Controlling spin current polarization through non-collinear antiferromagnetism

The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of these spin currents are collinear with the magnetization. However, symmetry conditions generally restrict spin polarizations to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced. Here, we show control of the spin polarization direction by using a non-collinear antiferromagnet Mn₃GaN, in which the triangular spin structure creates a low magnetic symmetry while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn₃GaN/permalloy heterostructures can generate unconventional spin-orbit torques at room temperature corresponding to out-of-plane and Dresselhaus-like spin polarizations which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spin-orbit torque, enabling high-efficient antiferromagnetic spintronics.

In the typical spin-hall effect, spin-current, charge current, and spin polarisation are all mutually perpendicular, a feature enforced by symmetry. Here, using an anti-ferromagnet with a triangular spin structure, the authors demonstrate a spin-hall effect without a perpendicular spin alignment.

Epitaxial antiperovskite/perovskite heterostructures for materials design

Engineered heterostructures formed by complex oxide materials are a rich source of emergent phenomena and technological applications. In the quest for new functionality, a vastly unexplored avenue is interfacing oxide perovskites with materials having dissimilar crystallochemical properties. Here, we propose a unique class of heterointerfaces based on nitride antiperovskite and oxide perovskite materials as a previously unidentified direction for materials design. We demonstrate the fabrication of atomically sharp interfaces between nitride antiperovskite Mn₃GaN and oxide perovskites (La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃ and SrTiO₃. Using atomic-resolution imaging/spectroscopic techniques and first-principles calculations, we determine the atomic-scale structure, composition, and bonding at the interface. The epitaxial antiperovskite/perovskite heterointerface is mediated by a coherent interfacial monolayer that interpolates between the two antistructures. We anticipate our results to be an important step for the development of functional antiperovskite/perovskite heterostructures, combining their unique characteristics such as topological properties for ultralow-power applications.

Antiperovskites with Exceptional Functionalities

ABX₃ perovskites, as the largest family of crystalline materials, have attracted tremendous research interest worldwide due to their versatile multifunctionalities and the intriguing scientific principles underlying them. Their counterparts, antiperovskites (X₃ BA), are actually electronically inverted perovskite derivatives, but they are not an ignorable family of functional materials. In fact, inheriting the flexible structural features of perovskites while being rich in cations at X sites, antiperovskites exhibit a diverse array of unconventional physical and chemical properties. However, rather less attention has been paid to these "inverse" analogs, and therefore, a comprehensive review is urgently needed to arouse general concern. Recent advances in novel antiperovskite materials and their exceptional functionalities are summarized, including superionic conductivity, superconductivity, giant magnetoresistance, negative thermal expansion, luminescence, and electrochemical energy conversion. In particular, considering the feasibility of the perovskite structure, a universal strategy for enhancing the performance of or generating new phenomena in antiperovskites is discussed from the perspective of solid-state chemistry. With more research enthusiasm, antiperovskites are highly anticipated to become a rising star family of functional materials.

Giant zero-field cooling exchange-bias-like behavior in antiperovskite Mn3Co0.61Mn0.39N compound

Giant zero-field cooling exchange-bias-like behavior with H EB = 3.49kOe was found in an antiperovskite Mn3Co0.61Mn0.39N compound. The magnetic structure of Mn3Co0.61Mn0.39N was resolved to be ferrimagentic ordering composed of canted Γ5g antiferromagnetic (AFM) and ferromagnetic (FM) along the [111] direction by the neutron diffraction technique. The exchange coupling model was proposed together with the first principles calculation for further understanding this exchange-bias-like behavior. It was found that the ferromagnetic exchange interaction between FM and the canted Γ5g AFM play an important role in the particular exchange-bias-like behavior. The exchange coupling constructed in the lattice is distinct from the interactions between collinear AFM and FM in conventional exchange bias system. In addition to the enhanced horizontal shift, hysteresis loops obtained after FC cooling also exhibited vertical shift. The macroscopic vertical shift of the magnetization is ascribed to the increase of the magnetic moment of canted Γ5g spins along the external magnetic field. This finding will promote the development of advanced magnetic devices.

Negative Thermal Expansion in the Materials With Giant Magnetocaloric Effect

Negative thermal expansion (NTE) behaviors in the materials with giant magnetocaloric effects (MCE) have been reviewed. Attentions are mainly focused on the hexagonal Ni2In-type MM'X compounds. Other MCE materials, such as La(Fe,Si)13, RCo2, and antiperovskite compounds are also simply introduced. The novel MCE and phase-transition-type NTE materials have similar physics origin though the applications are distinct. Spin-lattice coupling plays a key role for the both effect of NTE and giant MCE. Most of the giant MCE materials show abnormal lattice expansion owing to magnetic interactions, which provides a natural platform for exploring NTE materials. We anticipate that the present review can help finding more ways to regulate phase transition and dig novel NTE materials.

Rectifying Characteristics and Semiconductor-Metal Transition Induced by Interfacial Potential in the Mn3CuN/n-Si Intermetallic Heterojunction

The Mn₃CuN/n-Si heterojunction device is first designed in the antiperovskite compound, and excellent rectifying characteristics are obtained. The rectification ratio (RR) reaches as large as 38.9 at 10 V, and the open-circuit voltage V_oc of 1.13 V is observed under temperature of 410 K. The rectifying behaviors can be well described by the Shockley equation, indicating the existence of a Schottky diode. Simultaneously, a particular semiconductor-metal transition (SMT) behavior at 250 K is also observed in the Mn₃CuN/n-Si heterojunction. The interfacial band bending induced inversion layer, which is clarified by the interfacial schematic band diagrams, is believed to be responsible for the SMT and rectifying effects. This study can develop a new class of materials for heterojunction, rectifying devices, and SMT behaviors.