White Electroluminescent Lighting Device Based on a Single Quantum Dot Emitter

Modulating Eco-friendly Colloidal AgGaS2 Quantum Dots for Highly Efficient Photodetection and Image Sensing via Direct Growth of Ternary AgInS2 Shell

Tailoring the optoelectronic characteristics of colloidal quantum dots (QDs) by constructing a core/shell structure offers the potential to achieve high-performing solution-processed photoelectric conversion and information processing applications. In this work, the direct growth of wurtzite ternary AgInS2 (AIS) shell on eco-friendly AgGaS2 (AGS) core QDs is realized, giving rise to broadened visible light absorption, prolonged exciton lifetime and enhanced photoluminescence quantum yield (PLQY). Ultrafast transient absorption spectroscopy demonstrats that the photoinduced carrier separation and transfer kinetics of AGS QDs are significantly optimized following the AIS shell coating. As-synthesized environmentally benign AGS/AIS core/shell QDs are employed to fabricate photodetectors (PDs), showing a remarkable responsivity of 38.4 A W-1 and a detectivity of 2.4 × 1012 Jones under visible light illumination (405 nm). Moreover, the fabricated QDs-PDs exhibit superior image-sensing capability to record complex patterns with high resolution (160 × 160 pixels) under visible light illumination at 405 and 532 nm. The findings indicate that the direct growth of multinary narrow-band shell materials on eco-friendly QDs holds great promise to implement future "green", cost-effective and high-performance optoelectronic sensing/imaging systems.

High-Color-Rendition White QLEDs by Balancing Red, Green and Blue Centres in Eco-Friendly ZnCuGaS:In@ZnS Quantum Dots

White light-emitting diodes (WLEDs) are the key components in the next-generation lighting and display devices. The inherent toxicity of Cd/Pb-based quantum dots (QDs) limits the further application in WLEDs. Recently, more attention is focused on eco-friendly QDs and their WLEDs, especially the phosphor-free WLEDs based on mono-component, which profits from bias-insensitive color stability. However, the imbalanced carrier distribution between red-green-blue luminescent centers, even the absence of a certain luminescent center, hinders their balanced and stable photoluminescence/electroluminescence (PL/EL). Here, an In3+-doped strategy in Zn-Cu-Ga-S@ZnS QDs is first proposed, and the balanced carrier distribution is realized by non-equivalent substitution and In3+ doping concentration modulation. The alleviation of the green emitter by the In3+-related red emitter and the compensation of blue emitter by the Zn-related electronic states contribute to the balanced red-green-blue emitting with high PL quantum yield (PLQY) of 95.3% and long lifetime (T90) of over 1100 h in atmospheric conditions. Thus, the In3+-doped WLEDs can achieve exceedingly slight proportional variations between red-green-blue EL intensity over time (∆CIE = (0.007, 0.009)), and high champion CRI of 94.9. This study proposes a single-component QD with balanced and stable red-green-blue PL/EL spectrum, meeting the requirements of lighting and display.

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Helical-caging enables single-emitted large asymmetric full-color circularly polarized luminescence

Colorful circularly polarized luminescence materials are desired for 3D displays, information security and asymmetric synthesis, in which single-emitted materials are ideal owing to self-absorption avoidance, evenly entire-visible-spectrum-covered photon emission and facile device fabrication. However, restricted by the synthesis of chiral broad-luminescent emitters, the realization and application of high-performing single-emitted full-color circularly polarized luminescence is in its infancy. Here, we disclose a single-emitted full-color circularly polarized luminescence system (spiral full-color emission generator), composed of whole-vis-spectrum emissive quantum dots and chiral liquid crystals. The system achieves a maximum luminescence dissymmetry factor of 0.8 and remains an order of 10-1 in visible region by tuning its photonic bandgap. We then expand it to a series of desired customized-color circularly polarized luminescence, build chiral devices and further demonstrate the working scenario in the photoinduced enantioselective polymerization. This work contributes to the design and synthesis of efficient chiroptical materials, device fabrication and photoinduced asymmetric synthesis.

Color Rendering Index over 95 Achieved by Using Light Recycling Process Based on Hybrid Remote-Type Red Quantum-Dot Components Applied to Conventional LED Lighting Devices

Red color conversion materials have often been used in conventional white LEDs (light-emitting diodes) to enhance the insufficient deep-red component and thus improve the color-rendering property. Quantum dots (QDs) are one of the candidates for this due to their flexibility in controlling the emission wavelength, which is attributed to the quantum confinement effect. Two types of remote QD components, i.e., QD films and QD caps, were prepared and applied to conventional white LED illumination to improve the color-rendering properties. Thanks to the red component near 630 nm caused by the QD components, the color rendering indices (CRIs) of both Ra and R9 could be increased to over 95. It was found that both the diffusing nature of the reflector and the light recycling process in the vertical cavity between the bottom reflector and the top optical films play important roles in improving the color conversion efficiency of remote QD components. The present study showed that the proper application of remote QDs combined with a suitable optical cavity can control the correlated color temperature of the illumination over a wide range, thus realizing different color appearances of white LED illumination. In addition, a high CRI of over 95 could be achieved due to the sufficient excitation from fewer QDs, due to the strong optical cavity effect.

I-III-VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I-III-VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I-III-VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I-III-VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

Review: Quantum Dot Light-Emitting Diodes

Quantum dot light-emitting diodes (QD-LEDs) are one of the most promising self-emissive displays in terms of light-emitting efficiency, wavelength tunability, and cost. Future applications using QD-LEDs can cover a range from a wide color gamut and large panel displays to augmented/virtual reality displays, wearable/flexible displays, automotive displays, and transparent displays, which demand extreme performance in terms of contrast ratio, viewing angle, response time, and power consumption. The efficiency and lifetime have been improved by tailoring the QD structures and optimizing the charge balance in charge transport layers, resulting in theoretical efficiency for unit devices. Currently, longevity and inkjet-printing fabrication of QD-LEDs are being tested for future commercialization. In this Review, we summarize significant progress in the development of QD-LEDs and describe their potential compared to other displays. Furthermore, the critical elements to determine the performance of QD-LEDs, such as emitters, hole/electron transport layers, and device structures, are discussed comprehensively, and the degradation mechanisms of the devices and the issues of the inkjet-printing process were also investigated.

Emission Mechanism of Self-Trapped Excitons in Sb3+-Doped All-Inorganic Metal-Halide Perovskites

Sb³⁺ doping confers highly efficient and color-diverse broadband light emission to all-inorganic metal-halide perovskites. However, the emission mechanism is still under debate. Herein, a trace amount of Sb³⁺ ions (<0.1% atomic percentage) doping in the typical all-inorganic perovskites Cs₂NaInCl₆, Rb₃InCl₆, and Cs₂InCl₅·H₂O allows universal observation of the fine structure in the photoluminescence excitation spectrum of the ns² electron. A lifetime mapping method was utilized to reveal the origin of broadband emission triggered by Sb³⁺ doping, by which various fluorescence components can be differentiated. In particular, free-exciton emission was identified at the high-energy end of the broadband emission for all three doped systems. The excitation-energy- and temperature-dependent fluorescence decay further indicates the existence and origin of self-trapped states. The observed structural and vibrational symmetry-dependent emission behaviors suggest dipole interactions can dramatically alter Stokes-shift energy and modulate the light-emitting wavelength.

Structural Optimization of Vertically-Stacked White LEDs with a Yellow Phosphor Plate and a Red Quantum-Dot Film

A remote-type white light-emitting diode (LED) consisting of a red quantum-dot (QD) film and a yellow phosphor plate was studied by both experiment and optical simulation. The sequence of the two color-conversion films had a substantial effect on the color-rendering properties of the vertically-stacked white LED, and the optimized configuration exhibited a high color rendering index of more than 90 thanks to the enhanced red component via the QD film. For the design of high-power white LED devices of a remote type, it was necessary to locate the color-conversion films below the diffuser plate to remove the substantial color dispersion depending on the viewing angle. The present study shows that high power and high color-rendering white LED devices can be realized in terms of two vertically-stacked color-conversion materials, which would provide long-term stability due to the remote design.

Substantial Improvement of Color-Rendering Properties of Conventional White LEDs Using Remote-Type Red Quantum-Dot Caps

A new type of remote red quantum-dot (QD) component was designed and fabricated to improve the color-rendering properties of conventional white LED (light-emitting diode) lightings. Based on an optical simulation, the rectangular cavity-type QD cap was designed with an opening window on the top surface. Red QD caps were fabricated using a typical injection molding technique and CdSe/ZnS QDs with a core/shell structure whose average size was ~6 nm. Red QD caps were applied to conventional 6-inch, 15-W white LED downlighting consisting of 72 LEDs arrayed concentrically. The red QD caps placed over white LEDs enhanced the red components in the long-wavelength range resulting in the increase of the color rendering index (CRI) from 82.9 to 94.5. The correlated color temperature was tuned easily in a wide range by adopting various configurations consisting of different QD caps. The spatial and angular homogeneities were secured on the emitting area because QD caps placed over the white LEDs did not exhibit any substantial optical path length difference. The present study demonstrates that adopting QD caps in conventional LED lightings provides a flexible and efficient method to realize a high color-rendering property and to adjust correlated color temperature appropriately for a specific application.

Synthesis of UV/blue light-emitting aluminum hydroxide with oxygen vacancy and their application to electrically driven light-emitting diodes

Aluminum hydroxide nanoparticles, one of the essential luminescent materials for display technology, bio-imaging, and sensors due to their non-toxicity, affordable pricing, and rare-earth-free phosphors, are synthesized via a simple method at a reaction time of 10 min at a low temperature of 200 °C. By controlling the precursor's ratio of aluminum acetylacetonate to oleic acid, UV or blue light-emitting aluminum hydroxides with oxygen defects and carbonyl radicals can be synthesized. As a result, aluminum hydroxide (Al(OH)_3−x) nanoparticles overwhelmingly emit UVA light (390 nm) because of the oxygen defects in nanoparticles, and carbon-related radicals on the nanoparticles are responsible for the blue-light emission at 465 nm. Electrically driven light-emitting devices are applied using luminescent aluminum hydroxide as an emissive layer, that consists of a cost-efficient inverted bottom-emission structure as [ITO (cathode)/ZnO/emissive layers/2,2′-bis(4-(carbazol-9-yl)phenyl)-biphenyl (BCBP)/MoO₃/Al (anode)]. The device with aluminum hydroxide as an emissive layer shows a maximum luminance of 215.48 cd m⁻² and external quantum efficiency (EQE) of 0.12%. The new method for synthesizing UV–blue emitting aluminum hydroxides and their application to LEDs will contribute to developing the field of non-toxic optoelectronic material or UV–blue emitting devices.

Ultraviolet/blue light-emitting aluminum hydroxide nanoparticles are prepared using a simple method and applied to the electrically driven light-emitting diode as an emissive layer.

Encapsulation of AgInS2/GaSx core/shell quantum dots in In-fumarate metal–organic frameworks for stability enhancement

Silver indium sulfide/gallium sulfide (AgInS2/GaSx) core/shell quantum dots (QDs), among the cadmium-free alternatives that possess a narrow band-edge emission, have attracted immense attention in recent years. However, the insufficient stability...

One-Dimensional Superlattice Heterostructure Library

Axially, epitaxially organizing nano-objects of distinct compositions and structures into superlattice nanowires enables full utilization of sunlight, readily engineered band structures, and tunable geometric parameters to fit carrier transport, thus holding great promise for optoelectronics and solar-to-fuel conversion. To maximize their efficiency, the general and high-precision synthesis of colloidal axial superlattice nanowires (ASLNWs) with programmable compositions and structures is the prerequisite; however, it remains challenging. Here, we report an axial encoding methodology toward the ASLNW library with precise control over their compositions, dimensions, crystal phases, interfaces, and periodicity. Using a predesigned, editable nanoparticle framework that offers the synthetic selectivity, we are able to chemically decouple adjacent sub-objects in ASLNWs and thus craft them in a controlled approach, yielding a library of distinct ASLNWs. We integrate therein plasmonic, metallic, or near-infrared-active chalcogenides, which hold great potential in solar energy conversion. Such synthetic capability enables a performance boost in target applications, as we report order-of-magnitude enhanced photocatalytic hydrogen production rates using optimized ASLNWs compared to corresponding solo objects. Furthermore, it is expected that such unique superlattice nanowires could bring out new phenomena.

High-performance tricolored white lighting electroluminescent devices integrated with environmentally benign quantum dots

The electroluminescent (EL) performances of quantum dot-light-emitting diodes (QLEDs) based on either high-quality CdSe- or Cd-free quantum dots (QDs) have been greatly improved during the last decade, exclusively aiming at monochromatic devices for display applications. Meanwhile, work on white lighting QLEDs integrated particularly with Cd-free QDs remains highly underdeveloped. In this work, the solution-processed fabrication of tricolored white lighting QLEDs comprising three environmentally benign primary color emitters of II-VI blue and green ZnSeTe and I-III-VI red Zn-Cu-In-S (ZCIS) QDs is explored. The emitting layer (EML) consists of two different QD layers stacked on top of the other with an ultrathin ZnMgO nanoparticle buffer layer inserted in the middle, with both blue and green QDs mixed in one layer, and red QDs placed in a separate layer. The stacking order of the bilayered EML architecture is found to control the exciton recombination zone and thus crucially determine the EL performance of the device. The optimal tricolored white device yields outstanding EL performances such as 5461 cd m^-2 luminance, 5.8% external quantum efficiency, and 8.4 lm W^-1 power efficiency, along with a near-ideal color rendering index of 95, corresponding to the record quantities reported among Cd-free white lighting QLEDs.

Direct Writing Large-Area Multi-Layer Ultrasmooth Films by an All-Solution Process: Toward High-Performance QLEDs

With increasing the film area/layer, deteriorating in both smoothness and uniformity of thin-films frequently happen, which remains a barrier for making large-area quantum dot light-emitting diodes (QLEDs) by solution processes. Here, we demonstrated a facile all-solution process guided by the conical fiber array to write multi-layer ultrasmooth thin-films directly in centimeter scale. The side-by-side fibrous array helps to align surface tensions at the tri-phase contact line to facilitate large-area homogeneous deposition, which was verified by theoretical simulation. The Laplace pressure along individual conical fiber contributes to the steady liquid transfer. Thin-films with small roughness (<2.03 nm) and large-area (2×2 cm² ) uniformity were prepared sequentially on the target substrate, leading to large-area high-performance QLEDs. The result offers new insights for fabricating large-area high-performance thin-film devices.

Warm white-light emitting silica films prepared using lead-free double perovskite QDs

Lead-free double perovskite has attracted widespread attention due to its good stability and non-toxicity. In this work, Cs2AgxNa1-xInCl6 quantum dots were synthesized via a thermal injection method using non-toxic precursors. Based on the wide spectrum of self-bound excitons, the quantum dots achieved white light emission. Bi-doped Cs2AgxNa1-xInCl6 quantum dots with excellent luminescence performance have the same cubic structure, and they have a larger Stokes shift. The cubic perovskite space group is Fm3[combining macron]m, and [NaCl6], [AgCl6] and [InCl6] octahedrons alternately appear in the cubic structure. The photoluminescence quantum yield of Cs2AgxNa1-xInCl6 is improved by doping with a small amount of Bi; the PL QY increased to 57.3% with an obvious emission peak at 600 nm. The stability and luminescence intensity of perovskite QDs were further enhanced by SiO2 coating and a Cs2AgxNa1-xInCl6:Bi-SiO2 thin film was prepared using perhydropolysilazane as the precursor. The materials have huge application potential in the field of white light emission and display.

Synthesis of water soluble CuGaS2/ZnS quantum dots for ultrasensitive fluorescent detection of alkaline phosphatase based on inner filter effect

Developing monitoring technique for alkaline phosphatase (ALP) is crucial due to the important role it plays in living cells. Here, a kind of biocompatible glutathione-modified CuGaS₂/ZnS quantum dots (GSH-CGS/ZnS QDs) was used as a fluorescent substance and then fabricated "turn-off" fluorescent biosensor for detection of ALP by help of inner filter effect (IFE). Firstly, we prepared CuGaS₂/ZnS (CGS/ZnS) QDs using solvothermal method and explored the efficient ligand (GSH) exchanges strategy for transferring oil-soluble CGS/ZnS QDs to aqueous phase. More importantly, we also explored the potential biological applications of the nanohybrid QDs. The obtained GSH-CGS/ZnS QDs emitted strong yellow fluorescence with the maximum excitation (400 nm) and emission (601 nm). Then, GSH-CGS/ZnS QDs were mixed with p-nitrophenylphosphate (PNPP) and ALP. PNPP could be hydrolyzed to p-nitrophenol (PNP) by help of catalysis of ALP, and the excitation spectrum of the GSH-CGS/ZnS QDs overlapped well with the absorption spectrum of PNP, so the fluorescence of GSH-CGS/ZnS QDs was initially quenched via the so-called "IFE". Finally, a novel "turn-off" biosensor for sensitive detection of ALP in the range of 0.05-10 U L ^-1(R² = 0.98) with a detection limit of 0.01 U L^-1 was successfully obtained. Results indicated that I-III-VI₂ nanocrystals have great potential for their promising biomedical application.

High-Performance Quantum-Dot Light-Emitting Transistors Based on Vertical Organic Thin-Film Transistors

In this work, a novel vertical quantum-dot light-emitting transistor (VQLET) based on a vertical organic thin-film transistor is successfully fabricated. Benefiting from the new vertical architecture, the VQLET is able to afford an extremely high current density, which allows most of the organic thin film transistors (OTFT) even with low mobility (for instance, poly(3-hexylthiophene)) to drive a quantum-dot light-emitting diode (QLED), which was previously unavailable. Moreover, the hole injection barrier could be modulated by the additional gate electrode, which precisely optimizes the charge balance in the device, a critical issue in QLED, resulting in the precise control of current density and brightness of the VQLET. The VQLET shows a high performance with a maximum current efficiency of 37 cd/A. Furthermore, integrating OTFT and QLED into a single device, the VQLET features drastic advantages by realizing active matrix quantum-dot light-emitting diodes (AMQLEDs), which significantly reduces the number of transistors and frees the large area fraction occupied by transistors. Hence, these results indicate that the VQLET provides a new strategy for realizing a low-cost, solution-processed, high-performance OTFT-AMQLED for the flat panel display technology. Moreover, the novel design offers a unique method to exquisitely control the charge balance and maximize the efficiency the QLED.

Tunable Emission of Bluish Zn-Cu-Ga-S Quantum Dots by Mn Doping and Their Electroluminescence

On the basis of bluish-emitting double-shelled quantum dots (QDs) of Zn-Cu-Ga-S (ZCGS)/ZnS/ZnS, Mn doping into ZCGS host with different Mn/Cu concentrations is implemented via surface adsorption and lattice diffusion. The resulting double-shelled Mn-doped ZCGS (ZCGS/Mn) QDs exhibit a distinct Mn^2+ 4T₁-⁶A₁ emission as a consequence of effective lattice incorporation simultaneously with host intragap states-involving emissions of free-to-bound and donor-acceptor pair recombinations. The relative contribution of Mn emission to the overall photoluminescence (PL) is consistently proportional to its concentration, resulting in tunable PL from bluish, white, to reddish white. Regardless of Mn doping and its concentration, all QDs possess high PL quantum yield levels of 74-79%. Those undoped and doped QDs are then employed as an emitting layer (EML) of all-solution-processed QD-light-emitting diodes (QLEDs) with hybrid charge transport layers and their electroluminescence (EL) is compared. Compared to undoped QDs, doped analogues give rise to a huge spectral disparity of EL versus PL, specifically showing a near-complete quenching of Mn²⁺ EL. This unexpected observation is rationalized primarily by considering unbalanced carrier injection to QD EML on the basis of energetic alignment of the present QLED and rapid trapping of holes injected at intragap states of QDs.

Synthesis and electroluminescence of novel white fluorescence quantum dots based on a Zn–Ga–S host

White-light-emitting Ag, Mn: Zn–Ga–S/ZnS quantum dots (QDs) with a gratifying photoluminescence (PL) quantum yield (QY) of up to 90% were prepared, and shown to be ultra-stable, maintaining a high PL intensity at 300 °C or for 32 h of UV illumination.

From one-dimensional to two-dimensional wurtzite CuGaS2 nanocrystals: non-injection synthesis and photocatalytic evolution

Multinary copper-based chalcogenides exhibit significant performance in photocatalytic hydrogen evolution due to their suitable optical bandgap for visible light absorption and environmentally friendly character. Herein, high-quality wurtzite CuGaS2 (CGS) nanocrystals (NCs) were synthesized by using a one-step heating-up process without any injection, and the morphology could be tuned from one-dimensional (1D) to two-dimensional (2D) by precise choice of surface ligands and gallium precursors. The formation mechanism of CGS NCs was studied comprehensively by means of the temporal-evolution of the morphology, crystal structure and optical absorption results. The reaction started from djurleite Cu31S16 NCs, and then proceeded with the formation of Cu31S16-CGS heteronanostructures (HNS), and finally the transformation from HNS to monophasic CGS nanorods took place with prolonging of the synthesis time. The optical bandgap and the energy level of the different-dimensional CGS NCs exhibited a strong dependence on the morphology change, which correlated with the percentage of the exposed {001} and {100} facets. The theoretical calculation based on density functional theory (DFT) revealed that the (001) surface facilitated the charge transport rather than the (100) surface, which was consistent with the electrochemical impedance spectroscopy (EIS) results. As a result, the 2D CGS nanoplates with more exposed {001} facets exhibited an attractive photocatalytic hydrogen production activity under simulated solar illumination as compared to 1D and quasi-2D counterparts. This study demonstrates that control over the dimension of I-III-V group semiconductor NCs could lead to a significant improvement of the photocatalytic hydrogen evolution.

Electroluminescence from two I-III-VI quantum dots of A-Ga-S (A=Cu, Ag)

Together with III-V InP, chalcopyrite I-III-VI metal chalcogenides particularly with the compositions of A-B-S (A=Cu⁺, Ag⁺, B=In³⁺, Ga³⁺) are regarded as an emerging non-Cd class for synthesis of visible-emitting colloidal quantum dots (QDs) and the following fabrication of QD-light-emitting diodes (QLEDs). To date, the composition of I-III-VI QDs which were exploited for QLED fabrication remains highly limited, with most devices demonstrated from Cu-In-S-based ones. Herein, we explore the synthesis of two Ga-based I-III-VI QDs of Ag-Ga-S (AGS) and Cu-Ga-S (CGS) QDs and their application to QLED fabrication. Using cyan AGS/ZnS and azure CGS/ZnS core/shell QDs, all-solution-processed, multilayered QLEDs with a hybrid combination of organic hole transport layer and inorganic electron transport layer are fabricated and compared. We observe that CGS QLED by far outperforms in luminance and efficiency its AGS counterpart, which is ascribable to the differences in both electronic band structure and core/shell structure between two comparative QDs.

Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers

In this work, we developed a charge control sandwich structure around QD layers for the inverted QLEDs, the performance of which is shown to exceed that of the conventional QLEDs in terms of the external quantum efficiency (EQE) and the current efficiency (CE). The QD light-emitting layer (EML) is sandwiched with two ultrathin interfacial layers: one is a poly(9-vinlycarbazole) (PVK) layer to prevent excess electrons, and the other is a polyethylenimine ethoxylated (PEIE) layer to reduce the hole injection barrier. The sandwich structure resolves the imbalance between injected holes and electrons and brings the level of balanced charge carriers to a maximum. We demonstrated the highly improved performance of 89.8 cd/A of current efficiency, 22.4% of external quantum efficiency, and 72 814 cd m^-2 of maximum brightness with the solution-processed inverted QLED. This sandwich structure (PVK/QD/PEIE), as a framework, can be applied to various QLED devices for enhancing performance.

Synthesis of highly efficient azure-to-blue-emitting Zn-Cu-Ga-S quantum dots

To realize blue emission-capable non-Cd I-III-VI quantum dots (QDs), we explore the synthesis of ternary Cu-Ga-S (CGS) QDs and subsequent quaternary Zn-Cu-Ga-S (ZCGS) via Zn alloying into a CGS host. The resulting ZCGS/ZnS core/shell QDs possess not only Zn content-dependent tunable emissions in the azure-to-blue range but also exceptional quantum yields of 78-83%.

From Large-Scale Synthesis to Lighting Device Applications of Ternary I-III-VI Semiconductor Nanocrystals: Inspiring Greener Material Emitters

Quantum dots with fabulous size-dependent and color-tunable emissions remained as one of the most exciting inventories in nanomaterials for the last 3 decades. Even though a large number of such dot nanocrystals were developed, CdSe still remained as unbeatable and highly trusted lighting nanocrystals. Beyond these, the ternary I-III-VI family of nanocrystals emerged as the most widely accepted greener materials with efficient emissions tunable in visible as well as NIR spectral windows. These bring the high possibility of their implementation as lighting materials acceptable to the community and also to the environment. Keeping these in mind, in this Perspective, the latest developments of ternary I-III-VI nanocrystals from their large-scale synthesis to device applications are presented. Incorporating ZnS, tuning the composition, mixing with other nanocrystals, and doping with Mn ions, light-emitting devices of single color as well as for generating white light emissions are also discussed. In addition, the future prospects of these materials in lighting applications are also proposed.

Composite Supraparticles with Tunable Light Emission

Robust luminophores emitting light with broadly tunable colors are desirable in many applications such as light-emitting diode (LED)-based lighting, displays, integrated optoelectronics and biology. Nanocrystalline quantum dots with multicolor emission, from core- and shell-localized excitons, as well as solid layers of mixed quantum dots that emit different colors have been proposed. Here, we report on colloidal supraparticles that are composed of three types of Cd(Se,ZnS) core/(Cd,Zn)S shell nanocrystals with emission in the red, green, and blue. The emission of the supraparticles can be varied from pure to composite colors over the entire visible region and fine-tuned into variable shades of white light by mixing the nanocrystals in controlled proportions. Our approach results in supraparticles with sizes spanning the colloidal domain and beyond that combine versatility and processability with a broad, stable, and tunable emission, promising applications in lighting devices and biological research.

Phosphine-Free Synthesis of Metal Chalcogenide Quantum Dots by Directly Dissolving Chalcogen Dioxides in Alkylthiol as the Precursor

Semiconductor quantum dots (QDs) are competitive emitting materials in developing new-generation light-emitting diodes (LEDs) with high color rendering and broad color gamut. However, the use of highly toxic alkylphosphines cannot be fully avoided in the synthesis of metal selenide and telluride QDs because they are requisite reducing agents and solvents for preparing chalcogen precursors. In this work, we demonstrate the phosphine-free preparation of selenium (Se) and tellurium (Te) precursors by directly dissolving chalcogen dioxides in the alkylthiol under the mild condition. The chalcogen dioxides are reduced to elemental chalcogen clusters, while the alkylthiol is oxidized to disulfides. The chalcogen clusters further combine with the disulfides, generating dispersible chalcogen precursors. The resulting chalcogen precursors are suitable for synthesizing various metal chalcogenide QDs, including CdSe, CdTe, Cu₂Te, Ag₂Te, PbTe, HgTe, and so forth. In addition, the precursors are of high reactivity, which permits a shorter QD synthesis process at lower temperature. Owing to the high quantum yield (QYs) and easy tunability of the photoluminescence (PL), the as-synthesized QDs are further employed as down-conversion materials to fabricate monochrome and white LEDs.

Emissive CdTe/ZnO/GO quasi-core-shell-shell hybrid quantum dots for white light emitting diodes

Colloidal quantum dots (QDs) have been extensively studied for optoelectronic and biological applications due to their unique physical and optical properties. In particular, among the optoelectronics applications, the white light emitting diode (WLED) has great potential in flat panel displays and solid-state lighting. Herein, we demonstrate a novel, facile, and efficient technique for the synthesis of CdTe/ZnO/GO quasi-core-shell-shell hybrid quantum dots containing the CdTe core with multi shells of ZnO and graphene oxide (GO) and fabrication of WQDLEDs. The CdTe/ZnO/GO quasi-core-shell-shell QDs have a unique strong photoluminescence (PL) peak at 624 nm related to the CdTe core and new weak peaks at 382, 404, 422, and 440 nm due to conjugation with ZnO and GO. Also, in the electroluminescence (EL), multiple emission peaks are observed, which can be correlated to the recombination process inside the CdTe core and also recombination of electrons in the lowest unoccupied molecular orbital (LUMO) and LUMO+2 of GO and holes in the valence band (VB) of ZnO. The QDLEDs show clear white color emission with a maximum luminance value of about 480 cd m^-2 with Commission Internationale de l'Eclairage (CIE) color coordinates of (0.35, 0.28).