2D Layered Materials of Rare-Earth Er-Doped MoS2 with NIR-to-NIR Down- and Up-Conversion Photoluminescence

Theoretical study of piezoelectric and light absorption properties, and carrier mobilities of Janus TiPX (X = F, Cl, and Br) monolayers

Janus TiPX (X = F, Cl, and Br) monolayers were systematically investigated through first-principles calculations. The Janus TiPX monolayers exhibit mechanical and dynamic stability. Two monolayers are indirect bandgap semiconductors, except the TiPBr monolayer, which has the features of a quasi-direct bandgap semiconductor. Biaxial strain can modify the band gap of single layers. The Janus TiPX monolayers have remarkable flexibility and piezoelectric properties. In particular, the TiPF monolayer shows high horizontal (44.18 pm V-1) and vertical piezoelectric coefficients (-3.59 pm V-1). These values exceed those of conventional bulk materials, like GaN (3.1 pm V-1) and α-quartz (2.3 pm V-1). All of the monolayers have absorption coefficients of 105 cm-1 for visible and ultraviolet (UV) light, which are one order of magnitude greater than that of MoSSe. Furthermore, TiPX monolayers have high carrier mobility. Janus TiPX monolayers represent a class of two-dimensional (2D) materials with exceptional properties and multifunctionality, holding significant promise for various applications in piezoelectric sensors, solar cells, and nano-electronic devices.

High-Stability Near-Infrared Luminescent Glass Ceramic and Its Applications

Near-infrared (NIR) light, valuable for its biological penetration and invisibility to the human eye, is a crucial tool in biomedicine, environmental monitoring, anticounterfeiting, and information encryption, yet traditional NIR luminescent materials are often unstable in humid conditions. Here, a highly stable MgGeO3:Mn2+ glass ceramic (GC) with NIR luminescence was successfully synthesized. As-obtained GC700 boasts exceptional luminescent capabilities and possesses abundant trap structures, enabling data inscription with a 405 nm laser and retrieval via laser/thermal excitation. Moreover, the emission peak of Mn2+ can be manipulated from 630 to 691 nm by increasing the annealing treatment temperature. With the harnessing of the effective NIR emission, stable carrier characteristics, and numerous trap structures, there is potential for application in information encryption. Accordingly, we explored the application of MgGeO3:Mn2+ GC (GC700 and GC800) samples in precious three-dimensional (3D) information storage and NIR mechanoluminescence (ML) for biological tissue imaging. These applications demonstrate the potential and versatility of electron-capturing NIR luminescent materials in a range of cutting-edge fields.

Strong Covalent Coupling in Vertically Layered SnSe2/PTAA Heterojunctions Enabled High Performance Inorganic-Organic Hybrid Photodetectors

Controllable large-scale integration of two-dimensional (2D) materials with organic semiconductors and the realization of strong coupling between them still remain challenging. Herein, we demonstrate a wafer-scale, vertically layered SnSe2/PTAA heterojunction array with high light-trapping ability via a low-temperature molecular beam epitaxy method and a facile spin-coating process. Conductive probe atomic force microscopy (CP-AFM) measurements reveal strong rectification and photoresponse behavior in the individual SnSe2 nanosheet/PTAA heterojunction. Theoretical analysis demonstrates that vertically layered SnSe2/PTAA heterojunctions exhibit stronger C-Se covalent coupling than that of the conventional tiled type, which could facilitate more efficient charge transfer. Benefiting from these advantages, the SnSe2/PTAA heterojunction photodetectors with an optimized PTAA concentration show high performance, including a responsivity of 41.02 A/W, an external quantum efficiency of 1.31 × 104%, and high uniformity. The proposed approach for constructing large-scale 2D inorganic-organic heterostructures represents an effective route to fabricate high-performance broadband photodetectors for integrated optoelectronic systems.

Recent progress of UCNPs-MoS2 nanocomposites as a platform for biological applications

Composite materials can take advantages of the functional benefits of multiple pure nanomaterials to a greater degree than single nanomaterials alone. The UCNPs-MoS2 composite is a nano-application platform that combines upconversion luminescence and photothermal properties. Upconversion nanoparticles (UCNPs) are inorganic nanomaterials with long-wavelength excitation and short-wavelength tunable emission capabilities, and are able to effectively convert near-infrared (NIR) light into visible light for increased photostability. However, UCNPs have a low capacity for absorbing visible light, whereas MoS2 shows better absorption in the ultraviolet and visible regions. By integrating the benefits of UCNPs and MoS2, UCNPs-MoS2 nanocomposites can convert NIR light with a higher depth of detection into visible light for application with MoS2 through fluorescence resonance energy transfer (FRET), which compensates for the issues of MoS2's low tissue penetration light-absorbing wavelengths and expands its potential biological applications. Therefore, starting from the construction of UCNPs-MoS2 nanoplatforms, herein, we review the research progress in biological applications, including biosensing, phototherapy, bioimaging, and targeted drug delivery. Additionally, the current challenges and future development trends of UCNPs-MoS2 nanocomposites for biological applications are also discussed.

Improving the Luminescence Performance of Monolayer MoS2 by Doping Multiple Metal Elements with CVT Method

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) draw much attention as critical semiconductor materials for 2D, optoelectronic, and spin electronic devices. Although controlled doping of 2D semiconductors can also be used to tune their bandgap and type of carrier and further change their electronic, optical, and catalytic properties, this remains an ongoing challenge. Here, we successfully doped a series of metal elements (including Hf, Zr, Gd, and Dy) into the monolayer MoS2 through a single-step chemical vapor transport (CVT), and the atomic embedded structure is confirmed by scanning transmission electron microscope (STEM) with a probe corrector measurement. In addition, the host crystal is well preserved, and no random atomic aggregation is observed. More importantly, adjusting the band structure of MoS2 enhanced the fluorescence and the carrier effect. This work provides a growth method for doping non-like elements into 2D MoS2 and potentially many other 2D materials to modify their properties.

Lanthanide-doped MoS2 with enhanced oxygen reduction activity and biperiodic chemical trends

Molybdenum disulfide has broad applications in catalysis, optoelectronics, and solid lubrication, where lanthanide (Ln) doping can be used to tune its physicochemical properties. The reduction of oxygen is an electrochemical process important in determining fuel cell efficiency, or a possible environmental-degradation mechanism for nanodevices and coatings consisting of Ln-doped MoS₂. Here, by combining density-functional theory calculations and current-potential polarization curve simulations, we show that the dopant-induced high oxygen reduction activity at Ln-MoS₂/water interfaces scales as a biperiodic function of Ln type. A defect-state pairing mechanism, which selectively stabilizes the hydroxyl and hydroperoxyl adsorbates on Ln-MoS₂, is proposed for the activity enhancement, and the biperiodic chemical trend in activity is found originating from the similar trends in intraatomic 4f-5d6s orbital hybridization and interatomic Ln-S bonding. A generic orbital-chemistry mechanism is described for explaining the simultaneous biperiodic trends observed in many electronic, thermodynamic, and kinetic properties.

Recent Developments of Microscopic Study for Lanthanide and Manganese Doped Luminescent Materials

Luminescent materials are indispensable for applications in lighting, displays and photovoltaics, which can transfer, absorb, store and utilize light energy. Their performance is closely related with their size and morphologies, exact atomic arrangement, and local configuration about photofunctional centers. Advanced electron microscopy-based techniques have enabled the possibility to study nanostructures with atomic resolution. Especially, with the advanced micro-electro-mechanical systems, it is able to characterize the luminescent materials at the atomic scale under various environments, providing a deep understanding of the luminescent mechanism. Accordingly, this review summarizes the recent achievements of microscopic study to directly image the microstructure and local environment of activators in lanthanide and manganese (Ln/Mn²⁺ )-doped luminescent materials, including: 1) bulk materials, the typical systems are nitride/oxynitride phosphors; and 2) nanomaterials, such as nanocrystals (hexagonal-phase NaLnF₄ and perovskite) and 2D nanosheets (Ca₂ Ta₃ O₁₀ and MoS₂ ). Finally, the challenges and limitations are highlighted, and some possible solutions to facilitate the developments of advanced luminescent materials are provided.

Recent Development in Sensitizers for Lanthanide-Doped Upconversion Luminescence

The attractive features of lanthanide-doped upconversion luminescence (UCL), such as high photostability, nonphotobleaching or photoblinking, and large anti-Stokes shift, have shown great potentials in life science, information technology, and energy materials. Therefore, UCL modulation is highly demanded toward expected emission wavelength, lifetime, and relative intensity in order to satisfy stringent requirements raised from a wide variety of areas. Unfortunately, the majority of efforts have been devoted to either simple codoping of multiple activators or variation of hosts, while very little attention has been paid to the critical role that sensitizers have been playing. In fact, different sensitizers possess different excitation wavelengths and different energy transfer pathways (to different activators), which will lead to different UCL features. Thus, rational design of sensitizers shall provide extra opportunities for UCL tuning, particularly from the excitation side. In this review, we specifically focus on advances in sensitizers, including the current status, working mechanisms, design principles, as well as future challenges and endeavor directions.

Infrared Light Emission Devices Based on Two-Dimensional Materials

Two-dimensional (2D) materials have garnered considerable attention due to their advantageous properties, including tunable bandgap, prominent carrier mobility, tunable response and absorption spectral band, and so forth. The above-mentioned properties ensure that 2D materials hold great promise for various high-performance infrared (IR) applications, such as night vision, remote sensing, surveillance, target acquisition, optical communication, etc. Thus, it is of great significance to acquire better insight into IR applications based on 2D materials. In this review, we summarize the recent progress of 2D materials in IR light emission device applications. First, we introduce the background and motivation of the review, then the 2D materials suitable for IR light emission are presented, followed by a comprehensive review of 2D-material-based spontaneous emission and laser applications. Finally, further development directions and challenges are summarized. We believe that milestone investigations of 2D-material-based IR light emission applications will emerge soon, which are beneficial for 2D-material-based nano-device commercialization.

First-principles study of the electronic and optical properties of Ho[Formula: see text] impurities in single-layer tungsten disulfide

The electronic and optical properties of single-layer (SL) tungsten disulfide (WS[Formula: see text]) in the presence of substitutional Holmium impurities (Ho[Formula: see text]) are studied. Although Ho is much larger than W, density functional theory (DFT) including spin-orbit coupling is used to show that Ho:SL WS[Formula: see text] is stable. The magnetic moment of the Ho impurity is found to be 4.75[Formula: see text] using spin-dependent DFT. The optical selection rules identified in the optical spectrum match exactly the optical selection rules derived by means of group theory. The presence of neutral Ho[Formula: see text] impurities gives rise to localized impurity states (LIS) with f-orbital character in the band structure. Using the Kubo-Greenwood formula and Kohn-Sham orbitals we obtain atom-like sharp transitions in the in-plane and out-of-plane components of the susceptibility tensor, Im[Formula: see text] and Im[Formula: see text]. The optical resonances are in good agreement with experimental data.

Substantially Enhanced Properties of 2D WS2 by High Concentration of Erbium Doping against Tungsten Vacancy Formation

Doping in 2D materials is an important method for tuning of band structures. For this purpose, it is important to develop controllable doping techniques. Here, we demonstrate a substitutional doping strategy by erbium (Er) ions in the synthesis of monolayer WS2 by chemical vapor deposition. Substantial enhancements in photoluminescent and photoresponsive properties are achieved, which indicate a tungsten vacancy suppression mechanism by Er filling. Er ion doping in the monolayer WS2 is proved by X-ray diffraction (XRD) and X-ray photoelectron spectra (XPS), fluorescence, absorption, excitation, and Raman spectra. 11.5 at% of the maximum Er concentration is examined by energy dispersive X-ray spectroscopy (EDX). Over 6 times enhancement of intensities with 7.9 nm redshift in peaks are observed from the fluorescent spectra of Er-doped WS2 monolayers compared with their counterparts of the pristine WS2 monolayers, which agrees well with the density functional theory calculations. In addition, over 11 times of dark current, 469 times of photocurrents, photoresponsivity, and external quantum efficiency, and two orders of photoresponse speed are demonstrated from the Er-doped WS2 photodetector compared with those of the pristine WS2 device. Our findings prove rare-earth doping in 2D materials, the exciting and ideal technique for substantially enhanced photoluminescent and photoresponsive properties.

2D Personality of Multifunctional Carbon Nitrides towards Enhanced Catalytic Performance in Energy Storage and Remediation

Numerous scholars in the scientific and management areas have been overly focused on contemporary breakthroughs in two-dimensional objects for multiple prospective applications. Photochemical and electrocatalytic functions of integrated circuits associated with multi-component tools have been enhanced by designing the macro- and microstructures of the building blocks. Therefore, the current research attempts to explore a larger spectrum of layered graphitic carbon nitrides (g-C3N4) and their derivatives as an efficient catalyst. By executing systematic manufacturing, optimization, and evaluation of its relevance towards astonishing energy storage devices, adsorption chemistry, and remediation, many researchers have focused on the coupling of such 2D carbon nitrides combined with suitable elementals. Hybrid carbon nitrides have been promoted as reliable 2D combinations for the enhanced electrophotocatalytic functionalities, proved by experimental observations and research outputs. By appreciating the modified structural, surface, and physicochemical characteristics of the carbon nitrides, we aim to report a systematic overview of the g-C3N4 materials for the application of energy storages and environments. It has altered energy band gap, thermal stability, remarkable dimensional texturing, and electrochemistry, and therefore detailed studies are highlighted by discussing the chemical architectures and atomic alternation of g-C3N4 (2D) structures.

Rare-Earth Doping in Nanostructured Inorganic Materials

Impurity doping is a promising method to impart new properties to various materials. Due to their unique optical, magnetic, and electrical properties, rare-earth ions have been extensively explored as active dopants in inorganic crystal lattices since the 18th century. Rare-earth doping can alter the crystallographic phase, morphology, and size, leading to tunable optical responses of doped nanomaterials. Moreover, rare-earth doping can control the ultimate electronic and catalytic performance of doped nanomaterials in a tunable and scalable manner, enabling significant improvements in energy harvesting and conversion. A better understanding of the critical role of rare-earth doping is a prerequisite for the development of an extensive repertoire of functional nanomaterials for practical applications. In this review, we highlight recent advances in rare-earth doping in inorganic nanomaterials and the associated applications in many fields. This review covers the key criteria for rare-earth doping, including basic electronic structures, lattice environments, and doping strategies, as well as fundamental design principles that enhance the electrical, optical, catalytic, and magnetic properties of the material. We also discuss future research directions and challenges in controlling rare-earth doping for new applications.

Influence of Ce, Nd, Eu and Tm Dopants on the Properties of InSe Monolayer: A First-Principles Study

Doping of foreign atoms may substantially alter the properties of the host materials, in particular low-dimension materials, leading to many potential functional applications. Here, we perform density functional theory calculations of two-dimensional InSe materials with substitutional doping of lanthanide atoms (Ce, Nd, Eu, Tm) and investigate systematically their structural, magnetic, electronic and optical properties. The calculated formation energy shows that the substitutional doping of these lanthanide atoms is feasible in the InSe monolayer, and such doping is more favorable under Se-rich than In-rich conditions. As for the structure, doping of lanthanide atoms induces visible outward movement of the lanthanide atom and its surrounding Se atoms. The calculated total magnetic moments are 0.973, 2.948, 7.528 and 1.945 μB for the Ce-, Nd-, Eu-, and Tm-doped systems, respectively, which are mainly derived from lanthanide atoms. Further band structure calculations reveal that the Ce-doped InSe monolayer has n-type conductivity, while the Nd-doped InSe monolayer has p-type conductivity. The Eu- and Tm-doped systems are found to be diluted magnetic semiconductors. The calculated optical response of absorption in the four doping cases shows redshift to lower energy within the infrared range compared with the host InSe monolayer. These findings suggest that doping of lanthanide atoms may open up a new way of manipulating functionalities of InSe materials for low-dimension optoelectronics and spintronics applications.

Lanthanide-Doped Topological Nanosheets with Enhanced Near-Infrared Photothermal Performance for Energy Conversion

Two-dimensional inorganic semiconductor materials have aroused tremendous research interest and found their potential in resolving the present urgent global issues, such as cancer therapy and fresh water shortage. Particularly, the near-infrared (NIR) photothermal conversion efficiency is a significant parameter in photothermal therapy. However, lack of an effective improvement strategy and their relatively low NIR phothermal conversion efficiency would restrict their wide and further application. Here, this work reports that enhanced NIR photothermal conversion is achieved in topological Bi₂Se₃ nanosheets by introducing a lanthanide dopant. Specifically, lanthanide Pr-doped Bi₂Se₃ nanosheets possess a photothermal conversion efficiency of 49.5%, which is higher than those of undoped Bi₂Se₃ nanosheets (31.0%) and numerous reported photothermal materials. The electronic structure of Pr-doped Bi₂Se₃ nanosheets was also analyzed by first-principles simulation. Furthermore, an interfacial evaporation system based on the developed nanosheets has been established, demonstrating a superior solar-thermal conversion efficiency of 91.5% and a water evaporation rate of 1.669 kg m^-2 h^-1 under 1 sun irradiation. The present work would provide new insights for the increase in the efficiency of photothermal materials.

Investigation of high-concentration doping performance based on Er3+-ion-doped Ba6Gd2Ti4O17

Recently, various strategies have been explored during research into the use of lanthanide-doped luminescent materials to mitigate energy loss at elevated dopant concentrations. Herein we report Yb3+/Er3+ co-doped Ba6Gd2Ti4O17 (BGTO) phosphors with a laminated lattice structure, which can allow the high-concentration doping of Er3+ ions into the oxide. Detailed investigations into the luminescence properties and crystal structures of Yb3+/Er3+ co-doped BGTO reveal that an increase in the dopant concentration is associated with the dimensional limitation of energy transfer in the crystal lattice. This finding may provide a novel avenue for the construction of high-dopant-concentration UC luminescent materials.

Photoluminescence upconversion of 2D materials and applications

Photoluminescence (PL) upconversion is a phenomenon involving light-matter interactions, where the energy of emitted photons is higher than that of the incident photons. PL upconversion is an intriguing process in two-dimensional materials and specifically designed 2D heterostructures, which have potential upconversion applications in optoelectronic devices, bioimaging, and semiconductor cooling. In this review, we focus on the recent advances in photoluminescence upconversion in two-dimensional materials and their heterostructures. We discuss the upconversion mechanisms, applications, and future outlook of upconversion in two-dimensional materials.

2D Rare Earth Material (EuOCl) with Ultra-Narrow Photoluminescence at Room Temperature

High color purity and color rendition of 2D luminescent materials have long been pursued for applications in low-dimensional lighting, display, biolabeling, and laser. However, the reported photoluminescence (PL) linewidth of most 2D luminescent materials is about dozens of meV. Herein, a brand-new luminescent system of 2D rare earth (RE) material EuOCl (1.1 nm) with ultra-narrow linewidth (1.2 meV) at room temperature is successfully synthesized via chemical vapor deposition (CVD). The linewidth of EuOCl flakes at room temperature is even narrower than most 2D luminescent materials and heterostructures detected at below 10 K. Impressively, the as-synthesized EuOCl flakes show abnormal temperature-dependent photoluminescent properties, which is absolutely different from the relatively stable 4f-4f transitions in RE owing to shielding from outer shell electrons. J-mixing effect has been successfully applied for this phenomenon. Undoubtedly, luminescent 2D EuOCl flakes will open new territory for the applications of 2D RE materials in the 2D luminescent areas, especially for the applications at room temperature.

1550 nm excitation-responsive upconversion nanoparticles to establish dual-photodynamic therapy against pancreatic tumors

The second near-infrared biological window b (NIR-IIb, 1500-1700 nm) is recently considered as the promising region for deeper tissue penetration. Herein, a nanocarrier for 1550 nm light-responsive dual-photodynamic therapy (PDT) is developed to efficiently boost singlet oxygen (1O2) generation. The dual-photosensitizers (PSs), rose bengal (RB) and chlorin e6 (Ce6), are carried by the silica-coated core-shell LiYbF4:Er@LiGdF4 upconversion nanoparticles (UCNPs), forming UCNP/RB,Ce6. Following 1550 nm laser irradiation, the upconversion emission of UCNP/RB,Ce6 in both green (∼550 nm) and red (∼670 nm) colors is fully utilized to activate RB and Ce6, respectively. The simultaneous triggering of dual-PS generates an abundant amount of 1O2 resulting in boosted PDT efficacy. This dual-PDT nanocarrier presents an enhanced anticancer effect under single dose treatment in comparison with the single-PS ones from in vitro and in vivo treatments. The marriage between the boosted dual-PDT and 1550 nm light excitation is anticipated to provide a new avenue for non-invasive therapy.

Enhanced Electrical Performance of Monolayer MoS2 with Rare Earth Element Sm Doping

Rare earth (RE) element-doped two-dimensional (2D) transition metal dichalcogenides (TMDCs) with applications in luminescence and magnetics have received considerable attention in recent years. To date, the effect of RE element doping on the electronic properties of monolayer 2D-TMDCs remains unanswered due to challenges including the difficulty of achieving valid monolayer doping and introducing RE elements with distinct valence and atomic configurations. Herein, we report a unique strategy to grow the Sm-doped monolayer MoS₂ film by using an atmospheric pressure chemical vapor deposition method with the substrate face down on top of the growth source. A stable monolayer triangular Sm-doped MoS₂ was achieved. The threshold voltage of an Sm-doped MoS₂-based field effect transistor (FET) moved from -12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS₂. Additionally, the electrical performance of the monolayer MoS₂-based FET was improved by RE element Sm doping, including a 500% increase of the on/off current ratio and a 40% increase of the FET's mobility. The electronic property enhancement resulted from Sm doping MoS₂, which led internal lattice strain and changes in Fermi energy levels. These findings provide a general approach to synthesize RE element-doped monolayer 2D-TMDCs and to enrich their applications in electrical devices.

Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Atomic defects, being the most prevalent zero-dimensional topological defects, are ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be intrinsic, formed during the initial sample growth, or created by postprocessing. Despite the majority of TMDs being largely unaffected after losing chalcogen atoms in the outermost layer, a spectrum of properties, including optical, electrical, and chemical properties, can be significantly modulated, and potentially invoke applicable functionalities utilized in many applications. Hence, controlling chalcogen atomic defects provides an alternative avenue for engineering a wide range of physical and chemical properties of 2D TMDs. In this article, we review recent progress on the role of chalcogen atomic defects in engineering 2D TMDs, with a particular focus on device performance improvements. Various approaches for creating chalcogen atomic defects including nonstoichiometric synthesis and postgrowth treatment, together with their characterization and interpretation are systematically overviewed. The tailoring of optical, electrical, and magnetic properties, along with the device performance enhancement in electronic, optoelectronic, chemical sensing, biomedical, and catalytic activity are discussed in detail. Postformation dynamic evolution and repair of chalcogen atomic defects are also introduced. Finally, we offer our perspective on the challenges and opportunities in this field.

Pathogenic Virus Detection by Optical Nanobiosensors

The novel coronavirus pandemic is sweeping the world and causing global crises. The lack of effective methods of early diagnosis and accurate detection may result in severe infection as well as mortality. Therefore, it is urgently required that rapid, selective, and accurate techniques for detecting pathogenic viruses are developed. Nanotechnology-based biosensors are finding many applications in biological detection, which may address these issues and realize direct detection of molecular targets in real time. Among various nanoplatforms, optical nanobiosensors have aroused much interest due to their inherent advantages of high sensitivity and direct readout. In this review, a summary of recent progress on the optical biosensors based on nanotechnology for pathogenic virus detection is provided, with focus on quantum dots (QDs), upconversion nanoparticles (UCNPs), noble metal nanoparticles, and organic fluorescent molecules-based nanoprobes and chemiluminescence assays. These representative studies demonstrate appealing performance as biosensors and hold great promise for clinical diagnosis.

Multi-level information security realized in ortho-stannic acid magnesium with a single activator of Tb3+

In this work, we designed and successfully synthesized a material Mg₂SnO₄:Tb³⁺, which fully prove that the security of information has been greatly improved.

Selective growth and upconversion photoluminescence of Y-based fluorides: from NaYF4: Yb/Er to YF3: Yb/Er crystals

Y-based fluorides have been recognized as most efficient host materials for upconversion photoluminescence (UC-PL). Herein, we have produced a series of Yb/Er doped Y-based fluorides with specific crystal structures, shapes and sizes. The selective growth process is governed by our pre-designed surfactant 4, 4'-((2,5-bi's (2-(diethylamino) ethoxy) -1,4-phenylene) bis (ethyne-2,1-diyl)) dibenzoic acid (DBA) and selective solvents. It is shown that highly pure hexagonal microprisms and cubic microspheres of NaYF₄: Yb/Er could be selectively grown in water at low and high content of DBA, respectively, while only orthorhombic nanowires and microflowers of YF₃: Yb/Er could be obtained in ethanol. Finally, all these materials obtained exhibit strong UC-PL signal while the UC emission intensity of the NaYF₄: Yb/Er hexagonal microprisms is much higher than those of the cubic microspheres and orthorhombic YF₃ nanowires and microflowers. This work provides a novel method for selective crystal growth of Y-based fluorides with specific shape, size, crystal phase and highly UC-PL efficiency by breaking the intrinsic limitation of crystal growth habit, which could be possibly extended to the controlled synthesis of other related materials.

Ultrabroadband Tuning and Fine Structure of Emission Spectra in Lanthanide Er-Doped ZnSe Nanosheets for Display and Temperature Sensing

Realizing multicolored luminescence in two-dimensional (2D) nanomaterials would afford potential for a range of next-generation nanoscale optoelectronic devices. Moreover, combining fine structured spectral line emission and detection may further enrich the studies and applications of functional nanomaterials. Herein, a lanthanide doping strategy has been utilized for the synthesis of 2D ZnSe:Er³⁺ nanosheets to achieve fine-structured, multicolor luminescence spectra. Simultaneous upconversion and downconversion emission is realized, which can cover an ultrabroadband optical range, from ultraviolet through visible to the near-infrared region. By investigating the low-temperature fine structure of emission spectra at 4 K, we have observed an abundance of sublevel electronic energy transitions, elucidating the electronic structure of Er³⁺ ions in the 2D ZnSe nanosheet. As the temperature is varied, these nanosheets exhibit tunable multicolored luminescence under 980 and 365 nm excitation. Utilizing the distinct sublevel transitions of Er³⁺ ions, the developed 2D ZnSe:Er³⁺ optical temperature sensor shows high absolute (15.23% K^-1) and relative sensitivity (8.61% K^-1), which is superior to conventional Er³⁺-activated upconversion luminescent nanothermometers. These findings imply that Er³⁺-doped ZnSe nanomaterials with direct and wide band gap have the potential for applications in future low-dimensional photonic and sensing devices at the 2D limit.

Mechanisms and Applications of Steady-State Photoluminescence Spectroscopy in Two-Dimensional Transition-Metal Dichalcogenides

Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors exhibit many important structural and optoelectronic properties, such as strong light-matter interactions, direct bandgaps tunable from visible to near-infrared regions, flexibility and atomic thickness, quantum-confinement effects, valley polarization possibilities, and so on. Therefore, they are regarded as a very promising class of materials for next-generation state-of-the-art nano/micro optoelectronic devices. To explore different applications and device structures based on 2D TMDs, intrinsic material properties, their relationships, and evolutions with fabrication parameters need to be deeply understood, very often through a combination of various characterization techniques. Among them, steady-state photoluminescence (PL) spectroscopy has been extensively employed. This class of techniques is fast, contactless, and nondestructive and can provide very high spatial resolution. Therefore, it can be used to obtain optoelectronic properties from samples of various sizes (from microns to centimeters) during the fabrication process without complex sample preparation. In this article, the mechanism and applications of steady-state PL spectroscopy in 2D TMDs are reviewed. The first part of this review details the physics of PL phenomena in semiconductors and common techniques to acquire and analyze PL spectra. The second part introduces various applications of PL spectroscopy in 2D TMDs. Finally, a broader perspective is discussed to highlight some limitations and untapped opportunities of PL spectroscopy in characterizing 2D TMDs.

Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Extrinsically doped two-dimensional (2D) semiconductors are essential for the fabrication of high-performance nanoelectronics among many other applications. Herein, we present a facile synthesis method for Al-doped MoS₂ via plasma-enhanced atomic layer deposition (ALD), resulting in a particularly sought-after p-type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (10¹⁷ up to 10²¹ cm^-3) while retaining good crystallinity, mobility, and stoichiometry. This ALD-based approach also affords excellent control over the doping profile, as demonstrated by a combined transmission electron microscopy and energy-dispersive X-ray spectroscopy study. Sharp transitions in the Al concentration were realized and both doped and undoped materials had the characteristic 2D-layered nature. The fine control over the doping concentration, combined with the conformality and uniformity, and subnanometer thickness control inherent to ALD should ensure compatibility with large-scale fabrication. This makes Al:MoS₂ ALD of interest not only for nanoelectronics but also for photovoltaics and transition-metal dichalcogenide-based catalysts.

A Linear Relationship between the Charge Transfer Amount and Level Alignment in Molecule/Two-Dimensional Adsorption Systems

We systematically study the adsorption of tetrathiafulvalene (TTF), tetracyanoquinodimethane (TCNQ), and tetracyanoethylene (TCNE) on a variety of two-dimensional (2D) monolayers with weak van der Waals (vdW) interactions based on density functional theory. We confirm that TTF can act as an effective donor when its highest occupied molecular orbital (HOMO) level is higher than the conduction band minimum (CBM) state of 2D materials, while TCNQ and TCNE can act as effective acceptors when their lowest unoccupied molecular orbital (LUMO) levels are lower than the valence band maximum (VBM) state of 2D materials. Moreover, our calculations reveal a linear relationship between the charge transfer amount and level alignment between the molecule and 2D monolayer. In other words, the charge transfer is linearly dependent on the energy difference between the HOMO level and 2D CBM state for the donor molecule or the energy difference between the LUMO level and 2D VBM state for the acceptor molecule. The linear relationship indicates that the charge transfer is insensitive to the local binding environments due to the weak vdW interaction. However, the linear relationship cannot be applied to atoms or molecules that are chemisorbed on 2D materials.

Tuning Electrical Conductance in Bilayer MoS2 through Defect-Mediated Interlayer Chemical Bonding

Interlayer interaction could substantially affect the electrical transport in transition metal dichalcogenides, serving as an effective way to control the device performance. However, it is still challenging to utilize interlayer interaction in weakly interlayer-coupled materials such as pristine MoS₂ to realize layer-dependent tunable transport behavior. Here, we demonstrate that, by substitutional doping of vanadium atoms in the Mo sites of the MoS₂ lattice, the vanadium-doped monolayer MoS₂ device exhibits an ambipolar field effect characteristic, while its bilayer device demonstrates a heavy p-type field effect feature, in sharp contrast to the pristine monolayer and bilayer MoS₂ devices, both of which show similar n-type electrical transport behaviors. Moreover, the electrical conductance of the doped bilayer MoS₂ device is drastically enhanced with respect to that of the doped monolayer MoS₂ device. Employing first-principle calculations, we reveal that such striking behaviors arise from the presence of electrical transport networks associated with the enhanced interlayer hybridization of S-3p_z orbitals between adjacent layers activated by vanadium dopants in the bilayer MoS₂, which is nevertheless absent in its monolayer counterpart. Our work highlights that the effect of dopant not only is confined in the in-plane electrical transport behavior but also could be used to activate out-of-plane interaction between adjacent layers in tailoring the electrical transport of the bilayer transitional metal dichalcogenides, which may bring different applications in electronic and optoelectronic devices.

Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS2 and Effectively Altering the Electronic Structure and Phononic Properties

Substitutional doping of layered transition metal dichalcogenides (TMDs) has been proved to be an effective route to alter their intrinsic properties and achieve tunable bandgap, electrical conductivity and magnetism, thus greatly broadening their applications. However, achieving valid substitutional doping of TMDs remains a great challenge to date. Herein, a distinctive molten-salt-assisted chemical vapor deposition (MACVD) method is developed to match the volatilization of the dopants perfectly with the growth process of monolayer MoS2, realizing the substitutional doping of transition metal Fe, Co, and Mn. This doping strategy effectively alters the electronic structure and phononic properties of the pristine MoS2. In addition, a temperature-dependent Raman spectrum is employed to explore the effect of dopants on the lattice dynamics and first-order temperature coefficient of monolayer MoS2, and this doping effect is illustrated in depth combined with the theoretical calculation. This work provides an intriguing and powerful doping strategy for TMDs through employing molten salt in the CVD system, paving the way for exploring new properties of 2D TMDs and extending their applications into spintronics, catalytic chemistry and photoelectric devices.

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties

Doping of bulk silicon and III-V materials has paved the foundation of the current semiconductor industry. Controlled doping of 2D semiconductors, which can also be used to tune their bandgap and type of carrier thus changing their electronic, optical, and catalytic properties, remains challenging. Here the substitutional doping of nonlike element dopant (Mn) at the Mo sites of 2D MoS₂ is reported to tune its electronic and catalytic properties. The key for the successful incorporation of Mn into the MoS₂ lattice stems from the development of a new growth technology called dual-additive chemical vapor deposition. First, the addition of a MnO₂ additive to the MoS₂ growth process reshapes the morphology and increases lateral size of Mn-doped MoS₂ . Second, a NaCl additive helps in promoting the substitutional doping and increases the concentration of Mn dopant to 1.7 at%. Because Mn has more valance electrons than Mo, its doping into MoS₂ shifts the Fermi level toward the conduction band, resulting in improved electrical contact in field effect transistors. Mn doping also increases the hydrogen evolution activity of MoS₂ electrocatalysts. This work provides a growth method for doping nonlike elements into 2D MoS₂ and potentially many other 2D materials to modify their properties.

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition

Molybdenum disulfide (MoS₂) with excellent properties has been widely reported in recent years. However, it is a great challenge to achieve p-type conductivity in MoS₂ because of its native stubborn n-type conductivity. Substitutional transition metal doping has been proved to be an effective approach to tune their intrinsic properties and enhance device performance. Herein, we report the growth of Nb-doping large-area monolayer MoS₂ by a one-step salt-assisted chemical vapor deposition method. Electrical measurements indicate that Nb doping suppresses n-type conductivity in MoS₂ and shows an ambipolar transport behavior after annealing under the sulfur atmosphere, which highlights the p-type doping effect via Nb, corresponding to the density functional theory calculations with Fermi-level shifting to valence band maximum. This work provides a promising approach of two-dimensional materials in electronic and optoelectronic applications.

Multicolor luminescence and triple-mode emission of simple CaTiO3:Pr3+,Er3+ particles for advanced anti-counterfeiting

The multilevel anticounterfeiting QR code readily integrates the advantages of excitation wavelength-dependent PL emissions, a strong red afterglow and sensitive excitation power-dependent UCL emissions in one overall device.

Ultrathin 2D Rare-Earth Nanomaterials: Compositions, Syntheses, and Applications

Ultrathin 2D nanomaterials possess promising properties due to electron confinement within single or a few atom layers. As an emerging class of functional materials, ultrathin 2D rare-earth nanomaterials may incorporate the unique optical, magnetic, and catalytic behaviors of rare-earth elements into layers, exhibiting great potential in various applications such as optoelectronics, magnetic devices, transistors, high-efficiency catalysts, etc. Despite its importance, reviews on ultrathin 2D rare-earth nanomaterials or related topics are rare and only focus on a certain family of ultrathin 2D rare-earth nanomaterials. This work is the first comprehensive review in this impressive field, which covers all families of ultrathin 2D rare-earth nanomaterials, illustrating their compositions, syntheses, and applications. After summarizing the current achievements, the challenges and opportunities of future research on ultrathin 2D rare-earth nanomaterials are evaluated.

ZnS/C/MoS2 Nanocomposite Derived from Metal-Organic Framework for High-Performance Photo-Electrochemical Immunosensing of Carcinoembryonic Antigen

A hexafluorophosphate ionic liquid is used as a functional monomer to prepare a metal-organic framework (Zn-MOF). Zn-MOF is used as a template for MoS₂ nanosheets synthesis and further carbonized to yield light-responsive ZnS/C/MoS₂ nanocomposites. Zn-MOF, carbonized-Zn-MOF, and ZnS/C/MoS₂ nanocomposites are characterized by Fourier transform infrared spectroscopy, transmission electron microscopy, X-ray diffraction pattern, scanning electron microscopy (SEM), element mapping, Raman spectroscopy, X-ray photoelectron spectroscopy, fluorescence, and nitrogen-adsorption analysis. Carcinoembryonic antigen (CEA) is selected as a model to construct an immunosensing platform to evaluate the photo-electrochemical (PEC) performances of ZnS/C/MoS₂ nanocomposites. A sandwich-type PEC immunosensor is fabricated by immobilizing CEA antibody (Ab₁ ) onto the ZnS/C/MoS₂ /GCE surface, subsequently binding CEA and the alkaline phosphatase-gold nanoparticle labeled CEA antibody (ALP-Au-Ab₂ ). The catalytic conversion of vitamin C magnesium phosphate produces ascorbic acid (AA). Upon being illuminated, AA can react with photogenerated holes from ZnS/C/MoS₂ nanocomposites to generate a photocurrent for quantitative assay. Under optimized experimental conditions, the PEC immunosensor exhibits excellent analytical characteristics with a linear range from 2.0 pg mL^-1 to 10.0 ng mL^-1 and a detection limit of 1.30 pg mL^-1 (S/N = 3). The outstanding practicability of this PEC immunosensor is demonstrated by accurate assaying of CEA in clinical serum samples.

Challenges and recent advancements of functionalization of two-dimensional nanostructured molybdenum trioxide and dichalcogenides

Atomically thin two-dimensional (2D) semiconductors are the thinnest functional semiconducting materials available today. Among them, both molybdenum trioxide and chalcogenides (MT&Ds) represent key components within the family of different 2D semiconductors for various electronic, optoelectronic and electrochemical applications due to their unique electronic, optical, mechanical and electrochemical properties. However, despite great progress in research dedicated to the development and fabrication of 2D MT&Ds observed within the last decade, there are significant challenges that affected their charge transport behavior and fabrication on a large scale as well as there is high dependence of the carrier mobility on the thickness. In this article, we review the recent progress in the carrier mobility engineering of 2D MT&Ds and elaborate devised strategies dedicated to the optimization of MT&D properties. Specifically, the latest physical and chemical methods towards the surface functionalization and optimization of the major factors influencing the extrinsic transport at the electrode-2D semiconductor interface are discussed.

Multilevel Static-Dynamic Anticounterfeiting Based on Stimuli-Responsive Luminescence in a Niobate Structure

Anticounterfeiting is a highly required technique to protect the product and the consumer rights in the modern society. The conventional luminescent anticounterfeiting is based on downconversion luminescence excited by an ultraviolet light, which is easy to be faked. In this work, we realized six luminescent modes in a niobate-based structure (LiNbO₃:RE³⁺, RE³⁺ = Pr³⁺, Tm³⁺, Er³⁺, Yb³⁺), in which photostimulated luminescence of LiNbO₃:Pr³⁺, and upconversion luminescence color evolution of LiNbO₃:Er³⁺ were first presented. Based on the above luminescent modes of LiNbO₃:RE³⁺, multilevel anticounterfeiting devices were developed. By employing mechanoluminescence and persistent luminescence, we achieved dual-mode anticounterfeiting that could display the luminescent patterns without any direct irradiation. In addition, another dual-mode anticounterfeiting based on photostimulated luminescence and upconversion luminescence excited by a near-infrared light was realized, which could display the anticounterfeiting patterns in both static and dynamic states. To obtain an even higher anticounterfeiting level, downconversion luminescence, thermoluminescence, photostimulated luminescence, and upconversion luminescence were simultaneously applied in a food trademark. This four-mode anticounterfeiting trademark could not only show a static-dynamic luminescence that is hard to be faked but also allow consumers to distinguish the food freshness. The presented multilevel anticounterfeiting strategies could be employed to resolve the counterfeit issues in various fields.

Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities

Two-dimensional (2D) materials have attracted increasing interests in the last decade. The ultrathin feature of 2D materials makes them promising building blocks for next-generation electronic and optoelectronic devices. With reducing dimensionality from 3D to 2D, the inevitable defects will play more important roles in determining the properties of materials. In order to maximize the functionality of 2D materials, deep understanding and precise manipulation of the defects are indispensable. In the recent years, increasing research efforts have been made on the observation, understanding, manipulation, and control of defects in 2D materials. Here, we summarize the recent research progress of defect engineering on 2D materials. The defect engineering triggered by electron beam (e-beam), plasma, chemical treatment, and so forth is comprehensively reviewed. Firstly, e-beam irradiation-induced defect evolution, structural transformation, and novel structure fabrication are introduced. With the assistance of a high-resolution electron microscope, the dynamics of defect engineering can be visualized in situ. Subsequently, defect engineering employed to improve the performance of 2D devices by means of other methods of plasma, chemical, and ozone treatments is reviewed. At last, the challenges and opportunities of defect engineering on promoting the development of 2D materials are discussed. Through this review, we aim to build a correlation between defects and properties of 2D materials to support the design and optimization of high-performance electronic and optoelectronic devices.

Doping MoS2 monolayer with nonmetal atoms to tune its electronic and magnetic properties, and chemical activity: a computational study

The introduction of heteroatom into MoS₂ nanosheet can effectively tune the electronic properties and enhance its chemical reactivity towards small molecules, thus greatly widening their applications.

Doping engineering and functionalization of two-dimensional metal chalcogenides

Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism. A variety of novel doping engineering examples leading to Janus structures, defect curing effects, zero-valent intercalation and deliberately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for functionalizing MXs will be provided to facilitate ongoing research in this field toward multifunctional applications.

Two-dimensional plumbum-doped tin diselenide monolayer transistor with high on/off ratio

Doping can effectively regulate the electrical and optical properties of two-dimensional semiconductors. Here, we present high-quality Pb-doped SnSe₂ monolayer exfoliated using a micromechanical cleavage method. X-ray photoelectron spectroscopy measurement demonstrates that Pb content of the doped sample is ∼3.6% and doping induces the downward shift of the Fermi level with respect to the pure SnSe₂. Transmission electron microscopy characterization exhibits that Pb_0.036Sn_0.964Se₂ nanosheets have a high-quality hexagonal symmetry structure and Pb element is uniformly distributed in the nanosheets. The current of the SnSe₂ field effect transistors (FETs) was found to be very difficult to turn off due to the high electron density. The FETs based on the Pb_0.036Sn_0.964Se₂ monolayer show n-type behavior with a high on/off ratio of 10⁶ which is higher than any values of SnSe₂ FETs reported at the moment. The estimated carrier concentration of Pb_0.036Sn_0.964Se₂ is approximately six times lower than that of SnSe₂. The results suggest that the method of reducing carrier concentration by doping to achieve high on/off ratio is effective, and Pb-doped SnSe₂ monolayer has significant potential in future nanoelectronic and optoelectronic applications.

Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride

Hexagonal boron nitride (h-BN) was recently reported to display single photon emission from ultraviolet to near-infrared range due to the existence of defects. Single photon emission has potential applications in quantum information processing and optoelectronics. These findings trigger increasing research interests in h-BN defects, such as revealing the nature of the defects. Here, we report another intriguing defect property in h-BN, namely photoluminescence (PL) upconversion (anti-Stokes process). The energy gain by the PL upconversion is about 162 meV. The anomalous PL upconversion is attributed to optical phonon absorption in the one-photon excitation process, based on excitation power, excitation wavelength, and temperature-dependence investigations. Possible constitutions of the defects are discussed from the results of scanning transmission electron microscopy (STEM) studies and theoretical calculations. These findings show that defects in h-BN exhibit strong defect-phonon coupling. The results from STEM and theoretical calculations are beneficial for understanding the constitution of the h-BN defects.

One-Dimensional Atomic Segregation at Semiconductor-Metal Interfaces of Polymorphic Transition Metal Dichalcogenide Monolayers

Interface segregation is a powerful approach to tailor properties of bulk materials by interface engineering. Nevertheless, little is known about the chemical inhomogeneity at interfaces of polymorphic two-dimensional transition metal dichalcogenides (TMDs) and its influence on the properties of the 2D materials. Here we report one-dimensional monatomic segregation at coherent semiconductor-metal 1H/1T interfaces of Mo-doped WS₂ monolayers. The monatomic interface segregation takes place at an intact transition metal plane and is associated with the topological defects caused by reflection symmetry breaking at the 1T/1H interfaces and the weak difference in bonding strength between Mo-S and W-S. This finding enriches our understanding of the interaction between topological defects and impurities in 2D crystals and enlightens a potential approach to manipulate the properties of 2D TMDs by local chemical modification and interface engineering for applications in 2D TMD electronic devices.

Honeycomb-Satellite Structured pH/H2O2-Responsive Degradable Nanoplatform for Efficient Photodynamic Therapy and Multimodal Imaging

The oxygen-deprived environment of a solid tumor is still great restriction in achieving an efficient photodynamic therapy (PDT). In this work, we developed a smart pH-controllable and H₂O₂-responsive nanoplatform with degradable property, which was based on honeycomb manganese oxide (hMnO₂) nanospheres loaded with Ce6-sensitized core-shell-shell structured up-conversion nanoparticles (NaGdF₄:Yb/Er,Tm@NaGdF₄:Yb@NaNdF₄:Yb) (abbreviated as hMUC). In the system, the speedy breakup of the as-prepared hMnO₂ nanostructures results in release of loaded Ce6-sensitized UCNPs under the condition of H₂O₂ in acid solution. When exposed to tissue-penetrable 808 nm laser, up-conversion nanoparticles (UCNPs) emit higher-energy visible photons which would be absorbed by Ce6 to yield cytotoxic reactive oxygen species (ROS), thus triggering PDT treatment naturally. Moreover, the in vitro and in vivo experiments demonstrate that hMUC sample with the honeycomb-satellite structure can serve as multimodal bioimaging contrast agent for self-enhanced upconversion luminescence (UCL), magnetic resonance imaging (MRI) and computed tomography (CT) imaging, indicating that the as-prepared hMUC could be used in imaging-guided diagnosis and treatment, which has a potential application in the PDT treatment of tumor.

Realization of Lasing Emission from One Step Fabricated WSe₂ Quantum Dots

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) quantum dots (QDs) are the vanguard due to their unique properties. In this work, WSe₂ QDs were fabricated via one step ultrasonic probe sonication. Excitation wavelength dependent photoluminescence (PL) is observed from WSe₂ QDs. Room-temperature lasing emission which benefits from 3.7 times enhancement of PL intensity by thermal treatment at ~470 nm was achieved with an excitation threshold value of ~3.5 kW/cm² in a Fabry⁻Perot laser cavity. To the best of our knowledge, this is the first demonstration of lasing emission from TMDCs QDs. This indicates that TMDCs QDs are a superior candidate as a new type of laser gain medium.