Enhanced Optical and Electrical Properties of Polymer-Assisted All-Inorganic Perovskites for Light-Emitting Diodes

The Rise of Tandem Perovskite Light-Emitting Diode

In 2024, tandem perovskite light-emitting diodes (tandem-PLEDs) achieved a breakthrough external quantum efficiency of 43.42%, with an organic electroluminescence (EL) unit stacked atop a perovskite EL unit, surpassing the previous single-junction perovskite LEDs. This innovative design enables a higher brightness at lower currents, enhancing the longevity and efficiency of the tandem-PLEDs. Additionally, the tandem-PLEDs can also be fabricated by combining a perovskite EL unit with a perovskite quantum dot unit. In this perspective, the key advancements in tandem-PLEDs are highlighted, focusing on the development of perovskite-organic materials, perovskite-perovskite quantum dots, and the design principles for obtaining efficient and stable charge generation layers. But more importantly, the challenges and solutions are discussed in fabricating all-perovskite tandem LEDs using strongly polar solvents that have yet to be reported nowadays. This comprehensive guide aims to support researchers in advancing the practical deployment of tandem-PLED technology.

Blade-coated perovskite nanoplatelet polymer composites for sky-blue light-emitting diodes

Colloidal perovskite nanoplatelets (NPLs) have shown promise in tackling blue light-emitting diode challenges based on their tunable band gap and high photoluminescence efficiencies. However, high quality and large area dense NPL films have been proven to be very hard to prepare because of their chemical and physical fragility during the liquid phase deposition. Herein, we report a perovskite-polymer composite film deposition strategy with fine morphology engineering obtained using the blade coating method. The effects of the polymer type, solution concentration, compounding ratio and film thickness on the film quality are systematically investigated. We found that a relatively high-concentration suspension with an optimized NPL to polymer ratio of 1 : 2 is crucial for the suppression of phase separation and arriving at a uniform film. Finally, sky-blue NPL-based perovskite light-emitting diodes were fabricated by blade coating showing an EQE of 0.12% on a device area of 16 mm2.

Production and characterization of low-density silicon nitride reinforced zinc nanocomposite coatings on mild steel for applications in marine and automotive industries

In today's automotive, marine and petrochemical industries, the desire for lightweight materials has increased. Hence, necessitating the production of components with low density. In this work, lightweight Zn-Si3N4 coatings were developed by including Si3N4 in the zinc matrix. The optimal coatings were produced on steel samples at 45 °C and varied Si3N4 particles and voltages following ASTM A53/A53M standard. The deterioration (corrosion) property i.e. corrosion rate (CR) and current density (jocorr) of the uncoated (control) and coated samples were examined in 0.5 M of sulphuric acid using a potentiodynamic polarization technique following ASTM G3/G102 standard. The microstructure of the samples was studied via the SEM micrographs and XRD patterns, while the wear performance resistance (following ASTM G99 standard) and electrical conductivity of the samples were examined with a pin-on-disc tribometer and ammeter-voltmeter. The corrosion experiment indicated that the uncoated mild steel specimen possessed a CR of 12.345 mm year-1 and jocorr of 1060 μA/cm2, while the CR and jcorr of the coated samples ranged from 2.6793 to 4.7975 mm year-1 and 231-413 μA/cm2, respectively. The lower CR and jcorr values of the coated specimens, relative to the coated sample showed that the coatings possessed superior passivation ability in the test medium. The SEM micrographs of the samples showed refined morphology, while the XRD patterns revealed high peak intensity crystals such as Zn4SiN, ZnNSi, Zn4N and Zn2NSi, which could be beneficial to the mechanical properties and corrosion resistance of the steel. Moreover, the wear resistance study indicated that the COF of the uncoated sample ranged from 0.1 to 0.5, while those for coated specimens ranged from 0.05 to 0.35. Similarly, the uncoated steel exhibited a wear volume (WV) of 0.00508 mm3, while the WV of the coated specimens ranged from 0.00266 to 0.0028 mm3, indicating the existence of high strengthening mechanisms between the interface of the protecting device and the steel. Also, the electrical conductivity of the mild steel sample reduced from 12.97 Ω-1cm-1 to 0.64 Ω-1cm-1, indicating that the electrical resistivity of the steel was enhanced by the coatings.

High-Performance Blue Perovskite Light-Emitting Diodes Enabled by Synergistic Effect of Additives

While quasi-two-dimensional (quasi-2D) perovskites have good properties of cascade energy transfer, high exciton binding energy, and high quantum efficiency, which will benefit high-efficiency blue PeLEDs, inefficient domain distribution management and unbalanced carrier transport impede device performance improvement. Herein, (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz) and methyl 2-aminopyridine-4-carboxylate (MAC) were simultaneously introduced to a blue quasi-2D perovskite film. Relying on the synergistic effect of 2PACz and MAC, it not only modulates the phase distribution inhibiting the n = 2 phase but also greatly improves the electrical property of the quasi-2D perovskite film. As a result, the as-modified blue quasi-2D PeLED demonstrated an external quantum efficiency (EQE) of 17.08% and a luminance of 10142 cd m-2. This study exemplifies the synergistic effect among dual additives and offers a new effective additive strategy modulating phase distribution and building balanced carrier transport, which paves the way for the fabrication of highly efficient blue PeLEDs.

Highly stable CsPbBr3/ PMA perovskite nanocrystals for improved optical performance

In this study, to address the stability issues, we synthesized a CsPbBr3-coated poly (maleic anhydride-alt-1-octadecene) (CsPbBr3/PMA) using a modified hot-injection method. The CsPbBr3/PMA perovskite nanocrystals (PNCs) exhibited effective green emission at 522 nm with an improved photoluminescence quantum yield (86.8 %) compared to traditional CsPbBr3 PNCs (54.2 %). The ligands in the polymer coating can bond with the uncoordinated Pb and Br ions on the surface of PNCs to minimize surface defects and avoid exposure to the external environment, enhancing the stability of the perovskites. Time-resolved photoluminescence spectra showed longer lifetimes for CsPbBr3/PMA PNCs, while transient absorption measurements provided valuable insights into the intraband hot-exciton relaxation and recombination. We demonstrate the potential application of CSPbBr3/PMA in a down-conversion white-light-emitting diode (LED) by coupling green CsPbBr3/PMA and red K2SiF6:Mn4+ phosphor-coated glass slides onto a 455-nm blue GaN LED. The white LED produced a white light with the International Commission on Illumination color coordinates of (0.323, 0.345), luminous efficiency of 58.4 lm/W, and color rendering index of 83.2. The fabricated, white-LED system obtained a wide color gamut of 125.3 % of the National Television Standards Committee and 98.9 % of Rec. 2020. The findings demonstrate that CsPbBr3/PMA can be an efficient down-conversion material for white LEDs and backlighting.

Multifunctional Conjugated Molecular Additives for Highly Efficient Perovskite Light-Emitting Diodes

Further optimization of perovskite light-emitting diodes (PeLEDs) is impeded by crystal deformation caused by residual stress and defect formation with subsequent non-radiative recombination. Molecular additives for defect passivation are widely studied; however, the majority have insulating properties that hinder charge injection and transport. Herein, highly efficient green-emitting PeLEDs are reported by introducing semiconducting molecular additives (Fl-OEGA and Fl-C8A). Transmission electron microscopy shows that conjugated additives exist primarily at the grain boundaries of perovskite, and Kelvin probe force microscopy confirms that the variation in contact potential difference between grain boundaries and perovskite crystal domains is significantly reduced. The residual tensile stress is reduced by 13% and the activation energy for ion migration increases in the Fl-OEGA-treated perovskite film, compared to those of the film without additives. Compared to insulating 2,2'-(ethylenedioxy)diethylamine (EDEA), the introduction of semiconducting additives prevents a significant reduction in the charge-transport capability. Furthermore, the PeLEDs with Fl-OEGA show a negligible shift in the turn-on voltage and a significantly smaller decrease in the current density with increasing Fl-OEGA compared to the devices with EDEA. Finally, the 3D CsPbBr₃ -PeLEDs show the highest external quantum efficiency of 21.3% by the incorporation of semiconducting Fl-OEGA as a new multifunctional additive.

Improved Performance of All-Inorganic Perovskite Light-emitting Diodes via Nanostructured Stamp Imprinting

Halide perovskites are emerging emitters with excellent optoelectronic properties. Contrary to the large grain fabrication goal in perovskite solar cells, perovskite light-emitting diodes (PeLEDs) based on small grain enable efficient radiative recombination because of relatively higher charge carrier densities due to spatial confinement. However, achieving small-sized grain growth with superior crystal quality and film morphology remains a challenge. In this work, we demonstrated a nanostructured stamp thermal imprinting strategy to boost the surface coverage and improve the crystalline quality of CsPbBr₃ film, particularly confine the grain size, leading to the improvement of luminance and efficiency of PeLEDs. We improved the thermal imprinting process utilizing the nanostructured stamp to selectively manipulate the nucleation and growth in the nanoscale region and acquire small-sized grain accompanied by improved crystal quality and surface morphology of the film. By optimizing the imprinting pressure and the period of the nanostructures, appropriate grain size, high surface coverage, small surface roughness and improved crystallization could be achieved synchronously. Finally, the maximum luminance and efficiency of PeLEDs achieved by nanostructured stamp imprinting with a period of 320 nm are 67600 cd/m² and 16.36 cd/A, respectively. This corresponds to improvements of 123 % in luminance and 100 % in efficiency, compared to that of PeLEDs without the imprinting.

Modified Fabrication of Perovskite-Based Composites and Its Exploration in Printable Humidity Sensors

Organic perovskites are promising optoelectronic semiconductor materials with photoelectric applications. It is known that the luminescence of perovskites is highly sensitive to hydron molecules due to its low moisture resistance of crystal structure, indicating its potential application on humidity-sensing. Herein, a novel perovskite-based compound (PBC) with minimal defects was developed to promote the photoluminescence performance via optimization of the drying method and precursor constitutions. Perovskite materials with good structural integrity and enhanced fluorescence performance up to four times were obtained from supercritical drying. Moreover, the hydrophilic polymer matrix, polyethylene oxide (PEO), was added to obtain a composite of perovskite/PEO (PPC), introducing enhanced humidity sensitivity and solution processibility. These perovskite/PEO composites also exhibited long-term stability and manifold cycles of sensitivity to humidity owing to perovskite encapsulation by PEO. In addition, this precursor solution of perovskite-based composites could be fancily processed by multiple methods, including printing and handwriting, which demonstrates the potential and broaden the applications in architecture decoration, logos, trademarks, and double encryption of anti-fake combined with humidity.

18-Crown-6 Additive to Enhance Performance and Durability in Solution-Processed Halide Perovskite Electronics

Recently, an "interlayer" has been often adopted in organic-inorganic hybrid perovskite light-emitting diodes (PeLEDs). The term "interlayer" infers that the layer function is not clear, but it improves electroluminescence (EL) performance. In this respect, it is of interest to determine the exact role of the interlayer and how it works in PeLEDs. In this study, the interlayer is determined to play a crucial role in suppressing the chemical reaction between the metal oxide and hybrid perovskite layers. Nevertheless, the use of an interlayer, a wide gap insulator, does not guarantee the best PeLED performance because it hinders charge injection into the emission layer. Here, a method is proposed that does not apply an "interlayer" but enables simultaneous attainment of high EL performance and outstanding device stability. 18-crown 6-ether (18C6) additive (2.5 mg mL^-1 ) is found to fully suppress the chemical reaction between the metal oxide and hybrid perovskite layers. With the 18C6 additive, an 82-fold longer device lifetime and very low operating voltage (3.2 V at 10 000 cd m^-2 ) are demonstrated in a PeLED.

Ion Migration in Perovskite Light-Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

In recent years, perovskite light-emitting diodes (PeLEDs) have emerged as a promising new lighting technology with high external quantum efficiency, color purity, and wavelength tunability, as well as, low-temperature processability. However, the operational stability of PeLEDs is still insufficient for their commercialization. The generation and migration of ionic species in metal halide perovskites has been widely acknowledged as the primary factor causing the performance degradation of PeLEDs. Herein, this topic is systematically discussed by considering the fundamental and engineering aspects of ion-related issues in PeLEDs, including the material and processing origins of ion generation, the mechanisms driving ion migration, characterization approaches for probing ion distributions, the effects of ion migration on device performance and stability, and strategies for ion management in PeLEDs. Finally, perspectives on remaining challenges and future opportunities are highlighted.

Effect of Carrier Gas Flow Rate on the Morphology and Luminescence Properties of CsPbBr3 Microcrystals

All-inorganic halide perovskites, especially lead perovskite microcrystals, have attracted more and more attention because of their excellent photoelectric properties and chemical stability. Herein, high quality CsPbBr3 microcrystals with three different stable morphologies, namely microplate, frustum of a square pyramid and pyramid, were synthesized by the chemical vapor deposition (CVD) method through altering the flow rate of a carrier gas and were comparatively studied in structure and optical property. The photoluminescence (PL) results showed that the CsPbBr3 microplate has the best luminescence property. The structural characterization results by scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), X-ray rocking curves (XRC) and Raman revealed that the flow rate of the carrier gas could manipulate the morphology evolution of CsPbBr3 microcrystals and further impact their luminescence properties.

In situ preparation of Mn-doped perovskite nanocrystalline films and application to white light emitting devices

Mn-doped perovskite nanocrystals have promised new optoelectronic applications due to their unique material properties. In the present study, Mn-doped perovskite nanocrystalline films were prepared in situ in a polymer matrix. The Mn-doped perovskite nanocrystals (PNCs) had good crystallinity and uniform size/spatial distributions in the polymer film. Bright dual-color emission and the long lifetime of the excited state of the dopant were observed from the host exciton and the Mn²⁺ dopant, respectively. Furthermore, magnetism was observed in the optimal Mn²⁺ concentration, implying that magnetic coupling was achieved in the Mn-doped perovskite lattice. The Mn-doped perovskite films also showed superior stability against moisture. To demonstrate the practicality of this composite film, a white light emitting device was fabricated by combining a single composite film with a blue light emitting diode; the device showed a high-quality white light emission, and the Commission Internationale De L'Eclairage (CIE) chromaticity coordinate of the white light emitting diode (WLED) (0.361, 0.326) was close to the optimal white color index. In this single-layer WLED, self-absorption among the luminous multilayers in traditional white light emitting diodes can be avoided. The study findings revealed that Mn-doped perovskite nanocrystalline films have many exciting properties, which bodes well for the fundamental study and design of high-performance optoelectronic devices.

Recent Advances in Synthesis, Properties, and Applications of Metal Halide Perovskite Nanocrystals/Polymer Nanocomposites

Metal halide perovskite nanocrystals (PNCs) have recently garnered tremendous research interest due to their unique optoelectronic properties and promising applications in photovoltaics and optoelectronics. Metal halide PNCs can be combined with polymers to create nanocomposites that carry an array of advantageous characteristics. The polymer matrix can bestow stability, stretchability, and solution-processability while the PNCs maintain their size-, shape- and composition-dependent optoelectronic properties. As such, these nanocomposites possess great promise for next-generation displays, lighting, sensing, biomedical technologies, and energy conversion. The recent advances in metal halide PNC/polymer nanocomposites are summarized here. First, a variety of synthetic strategies for crafting PNC/polymer nanocomposites are discussed. Second, their array of intriguing properties is examined. Third, the broad range of applications of PNC/polymer nanocomposites is highlighted, including light-emitting diodes (LEDs), lasers, and scintillators. Finally, an outlook on future research directions and challenges in this rapidly evolving field are presented.

Low-Threshold Amplified Spontaneous Emission from Air-Stable CsPbBr3 Perovskite Films Containing Trace Amounts of Polyethylene Oxide

Organic additives can enhance the amplified spontaneous emission (ASE) performance of inorganic cesium lead halide perovskites (CsPbBr₃ ) but volatility, potential hygroscopicity and oxidative degradation of these additives jeopardizes the thermal stability and shelf-life of blended CsPbBr₃ films. To address this problem, we have fabricated perovskite films in a two-step solution protocol involving as little added polyethylene oxide (PEO) as possible. These films exhibited enhanced crystallization, improved photoluminescence (PL) intensity and prolonged lifetimes. Their hierarchical morphology and surface passivation lowered the ASE threshold from 278 to 176 μЈ/cm² under one-photon nanosecond laser excitation. The proportion of added PEO was 0.3 wt% and was subsequently almost fully removed, thereby reducing its adverse influence on the stability of resulting films under continuous pulsed laser excitation. Stable ASE spectra could be stimulated after storage in air for 10 months.

Antisolvent-Processed One-Dimensional Ternary Rubidium Copper Bromine Microwires for Sensitive and Flexible Ultraviolet Photodetectors

Recently, newly emerging halide perovskites have aroused intensive attention in photoelectric fields in virtue of their good properties, such as well-balanced carrier transport, large light absorption coefficient, tunable band gap, and low-temperature solution processing technique. Nevertheless, their future commercial development is severely hampered by lead toxicity and instability of such materials. In this work, one-dimensional Rb₂CuBr₃ single-crystal microwires (MWs) were prepared by antisolvent engineering, and they were further employed as absorbers to prepare sensitive ultraviolet (UV) photodetectors. The optical band gap of Rb₂CuBr₃ MWs is measured to be 3.83 eV, exhibiting an excellent UV absorption. The fabricated device demonstrates a remarkable UV light detection ability with a specific detectivity of 1.23 × 10¹¹ Jones, responsivity of 113.64 mA W^-1, and response speed of 69.31/87.55 ms under light illumination of 265 nm. Meanwhile, the proposed photodetector without any encapsulation shows outstanding stability and repeatability. After storing in ambient air for 2 weeks, the light detection ability remains basically unchanged. Further, a flexible photodetector was fabricated with the same structure, which demonstrates a remarkable bending endurance. These results confirm the great potential of Rb₂CuBr₃ for high-performance UV photodetectors, increasing the possibility for assembly of optoelectronic systems.

Perovskite Light-Emitting Diodes with EQE Exceeding 28% through a Synergetic Dual-Additive Strategy for Defect Passivation and Nanostructure Regulation

Quasi-2D perovskites have long been considered to have favorable "energy funnel/cascade" structures and excellent optical properties compared with their 3D counterparts. However, most quasi-2D perovskite light-emitting diodes (PeLEDs) exhibit high external quantum efficiency (EQE) but unsatisfactory operating stability due to Auger recombination induced by high current density. Herein, a synergetic dual-additive strategy is adopted to prepare perovskite films with low defect density and high environmental stability by using 18-crown-6 and poly(ethylene glycol) methyl ether acrylate (MPEG-MAA) as the additives. The dual additives containing COC bonds can not only effectively reduce the perovskite defects but also destroy the self-aggregation of organic ligands, inducing the formation of perovskite nanocrystals with quasi-core/shell structure. After thermal annealing, the MPEG-MAA with its CC bond can be polymerized to obtain a comb-like polymer, further protecting the passivated perovskite nanocrystals against water and oxygen. Finally, state-of-the-art green PeLEDs with a normal EQE of 25.2% and a maximum EQE of 28.1% are achieved, and the operating lifetime (T₅₀ ) of the device in air environment is over ten times increased, providing a novel and effective strategy to make high efficiency and long operating lifetime PeLEDs.

Highly Efficient Quasi-2D Perovskite Light-Emitting Diodes Incorporating a TADF Dendrimer as an Exciton-Retrieving Additive

Although small organics or polymer additives have been introduced to enhance film formation and radiative recombination of perovskite light-emitting diodes (PeLEDs), the exciton utilization and quantum efficiency need further optimization. Here, we introduce a thermal-activated delayed fluorescence (TADF) dendrimer as an additive to enhance the surface coverage and reduce the trap state of the grain boundary. More importantly, the TADF nature of such an additive can retrieve the exciton dissociated from perovskite or trapped by the grain boundary and then transfer the energy back to emissive perovskite through the Förster energy transfer process. Since the triplets can be reused by reverse intersystem crossing in such a TADF additive, the theoretical exciton utilization is 100%. As a result, the optimized PeLEDs cooperating with a TADF additive achieved a high current efficiency of 39.0 cd A^-1 and an ultrabright luminescence of 18,000 cd m^-2, which are almost 5 times higher than those of the control device without an additive. Moreover, the device stability monitored by half-lifetime at 1000 cd m^-2 enhanced 2 times after introducing the TADF dendrimer as an additive. The parent dendrimer without a TADF feature was also synthesized as an additive to explore the mechanism action, which found that 54% enhancement of device efficiency can be attributed to defect passivating, while 46% was assigned to retrieved energy. This research first demonstrates that the TADF dendrimer is a promising exciton-retrieving additive for enhancing the performance of PeLEDs by passivating defect, filling up grain boundary, and retrieving leakage exciton.

Highly Efficient Vacuum-Evaporated CsPbBr3 Perovskite Light-Emitting Diodes with an Electrical Conductivity Enhanced Polymer-Assisted Passivation Layer

Highly efficient vacuum-deposited CsPbBr₃ perovskite light-emitting diodes (PeLEDs) are demonstrated by introducing a separate polyethylene oxide (PEO) passivation layer. A CsPbBr₃ film deposited on the PEO layer via thermal co-evaporation of CsBr and PbBr₂ exhibits an almost 50-fold increase in photoluminescence quantum yield intensity compared to a reference sample without PEO. This enhancement is attributed to the passivation of interfacial defects of the perovskite, as evidenced by temperature-dependent photoluminescence measurements. However, direct application of PEO to an LED device is challenging because of the electrically insulating nature of PEO. This issue is solved by doping PEO layers with MgCl₂. This strategy results in an enhanced luminance and external quantum efficiency (EQE) of up to 6887 cd m^-2 and 7.6%, respectively. To the best of our knowledge, this is the highest EQE reported to date among vacuum-deposited PeLEDs.

Efficient and Stable Blue Perovskite Light-Emitting Devices Based on Inorganic Cs4PbBr6 Spaced Low-Dimensional CsPbBr3 through Synergistic Control of Amino Alcohols and Polymer Additives

Perovskite light-emitting devices (PeLEDs) have drawn a great deal of attention because of their exceptional optical and electrical properties. However, as for the blue PeLEDs based on low-dimensional (LD) CsPbBr₃, the low conductivity of the widely used organic spacers as well as the difficulty of forming pure and uniform LD CsPbBr₃ phase have severely inhibited the device performance such as stability and efficiency. In this work, we report an effective strategy to obtain high-quality LD CsPbBr₃ by using a novel spacer of inorganic Cs₄PbBr₆ instead of the common long-chain ammonium halides. We found that a 3-amino-1-propanol (3AP)-modified PEDOT:PSS was helpful to stimulate the formation of the LD blue emissive CsPbBr₃:Cs₄PbBr₆ composite. We also revealed that an additive of poly(vinylpyrrolidone) (PVP) in the precursor can limit further growth of LD perovskite phase into 3D perovskite phase upon annealing, thus resulting in a uniformly distributed LD perovskite with high color stability. Consequently, efficient blue PeLEDs @ 485 nm with a brightness of 2192 cd/m², current efficiency of 2.68 cd/A, and external quantum efficiency of 2.3% was successfully achieved. More importantly, the device showed much improved working stability compared to those with the spacer of organic ammonium halides. Our results provide some helpful insights into developing efficient and stable blue PeLEDs.

Color-Stable Blue Light-Emitting Diodes Enabled by Effective Passivation of Mixed Halide Perovskites

Bandgap tuning through mixing halide anions is one of the most attractive features for metal halide perovskites. However, mixed halide perovskites usually suffer from phase segregation under electrical biases. Herein, we obtain high-performance and color-stable blue perovskite LEDs (PeLEDs) based on mixed bromide/chloride three-dimensional (3D) structures. We demonstrate that the color instability of CsPb(Br_1-xCl_x)₃ PeLEDs results from surface defects at perovskite grain boundaries. By effective defect passivation, we achieve color-stable blue electroluminescence from CsPb(Br_1-xCl_x)₃ PeLEDs, with maximum external quantum efficiencies of up to 4.5% and high luminance of up to 5351 cd m^-2 in the sky-blue region (489 nm). Our work provides new insights into the color instability issue of mixed halide perovskites and can spur new development of high-performance and color-stable blue PeLEDs.

Case Studies on Structure-Property Relations in Perovskite Light-Emitting Diodes via Interfacial Engineering with Self-Assembled Monolayers

Metal halide perovskites promise bright and narrow-band light-emitting diodes (LEDs). To this end, reliable understanding on structure-property relations is necessary, yet singling out one effect from others is difficult because photophysical and electronic functions of perovskite LEDs are interwoven each other. To resolve this problem, we herein employ self-assembled monolayers (SAMs) for interfacial engineering nanomaterials. Four different molecules that have the same anchor (thiol), different backbone (aryl vs alkyl) and different terminal group (amine vs pyridine vs methyl) are used to form SAMs at the interface with the thin film of a green-color perovskite, CH₃NH₃PbBr₃. SAM-engineered perovskite films are characterized with X-ray diffraction (XRD), depth-profile X-ray photoelectron spectroscopy (XPS), Kelvin probe force microscopy (KPFM), scanning electron microscopy (SEM), time-resolved laser spectroscopy, and UV-vis absorption and emission spectroscopies. This permits access to how the chemical structure of molecule comprising SAM is related to the various chemical and physical features such as quality and grain size, cross-sectional atomic composition (Pb(0) vs Pb(II)), charge carrier lifetime, and charge mobility of perovskite films, leading to inferences of structure-property relations in the perovskite. Finally, we demonstrate that the trends observed in the model system stem from the affinity of SAM over the undercoordinated Pb ions of perovskite, and these are translated into considerably enhanced EQE (from 2.20 to 5.74%) and narrow-band performances (from 21.3 to 15.9 nm), without a noticeable wavelength shift in perovskite LEDs. Our work suggests that SAM-based interfacial engineering holds a promise for deciphering mechanisms of perovskite LEDs.

Materials, photophysics and device engineering of perovskite light-emitting diodes

Here we provide a comprehensive review of a newly developed lighting technology based on metal halide perovskites (i.e. perovskite light-emitting diodes) encompassing the research endeavours into materials, photophysics and device engineering. At the outset we survey the basic perovskite structures and their various dimensions (namely three-, two- and zero-dimensional perovskites), and demonstrate how the compositional engineering of these structures affects the perovskite light-emitting properties. Next, we turn to the physics underpinning photo- and electroluminescence in these materials through their connection to the fundamental excited states, energy/charge transport processes and radiative and non-radiative decay mechanisms. In the remainder of the review, we focus on the engineering of perovskite light-emitting diodes, including the history of their development as well as an extensive analysis of contemporary strategies for boosting device performance. Key concepts include balancing the electron/hole injection, suppression of parasitic carrier losses, improvement of the photoluminescence quantum yield and enhancement of the light extraction. Overall, this review reflects the current paradigm for perovskite lighting, and is intended to serve as a foundation to materials and device scientists newly working in this field.

Oriented Perovskite Growth Regulation Enables Sensitive Broadband Detection and Imaging of Polarized Photons Covering 300-1050 nm

Photodetectors selective to the polarization empower breakthroughs in sensing technology for target identification. However, the realization of polarization-sensitive photodetectors based on intrinsically anisotropic crystal structure or extrinsically anisotropic device pattern requires complicated epitaxy and etching processes, which limit scalable production and application. Here, solution-processed PEA₂ MA₄ (Sn_0.5 Pb_0.5 )₅ I₁₆ (PEA= phenylethylammonium, MA= methylammonium) polycrystalline film is probed as photoactive layer toward sensing polarized photon from 300 to 1050 nm. The growth of the PEA₂ MA₄ (Sn_0.5 Pb_0.5 )₅ I₁₆ crystal occurs in confined crystallographic orientation of the (202) facet upon the assistance of NH₄ SCN and NH₄ Cl, enhancing anisotropic photoelectric properties. Therefore, the photodetector achieves a polarization ratio of 0.41 and dichroism ratio (I_max /I_min ) of 2.4 at 900 nm. At 520 nm, the I_max /I_min even surpasses the one of the perovskite crystalline films, 1.8 and ≈1.2, respectively. It is worth noting that the superior figure-of-merits possess a response width of 900 kHz, I_on /I_off ratio of ≈3 × 10⁸ , linear dynamic range from 0.15 nW to 12 mW, noise current of 8.28 × 10^-13 A × Hz^-0.5 , and specific detectivity of 1.53 × 10¹² Jones, which demonstrate high resolution and high speed for weak signal sensing and imaging. The proof of concept in polarized imaging confirms that the polarization-sensitive photodetector meets the requirements for practical application in target recognition.

Advances in Perovskite Light-Emitting Diodes Possessing Improved Lifetime

Recently, perovskite light-emitting diodes (PeLEDs) are seeing an increasing academic and industrial interest with a potential for a broad range of technologies including display, lighting, and signaling. The maximum external quantum efficiency of PeLEDs can overtake 20% nowadays, however, the lifetime of PeLEDs is still far from the demand of practical applications. In this review, state-of-the-art concepts to improve the lifetime of PeLEDs are comprehensively summarized from the perspective of the design of perovskite emitting materials, the innovation of device engineering, the manipulation of optical effects, and the introduction of advanced encapsulations. First, the fundamental concepts determining the lifetime of PeLEDs are presented. Then, the strategies to improve the lifetime of both organic-inorganic hybrid and all-inorganic PeLEDs are highlighted. Particularly, the approaches to manage optical effects and encapsulations for the improved lifetime, which are negligibly studied in PeLEDs, are discussed based on the related concepts of organic LEDs and Cd-based quantum-dot LEDs, which is beneficial to insightfully understand the lifetime of PeLEDs. At last, the challenges and opportunities to further enhance the lifetime of PeLEDs are introduced.

Boosting the Efficiency and Stability of Perovskite Light-Emitting Devices by a 3-Amino-1-propanol-Tailored PEDOT:PSS Hole Transport Layer

Properties of the underlying hole transport layer (HTL) in perovskite light-emitting devices (PeLEDs) play a critical role in determining the optoelectronic performance through influencing both the charge transport and the quality of the active perovskite emission layer (EML). This work focuses on manipulating the carrier transport behavior and obtaining a high-quality EML film by tailoring the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL with previously unused amino alcohol 3-amino-1-propanol (3AP). The modified PEDOT:PSS rendered a deeper work function that is more suitable for the hole injection from the HTL to EML. More importantly, the 3AP-modified PEDOT:PSS film can induce a low-dimensional perovskite phase that can passivate the defects in the EML, resulting in a significantly improved light emission. Such ameliorations consequently result in a dramatical enhancement in performance of PeLED with a low turn-on voltage of 2.54 V, a maximum luminance of 23033 cd/m², a highest current efficiency of 29.38 cd/A, a corresponding maximum external quantum efficiency of 9.4%, and a prolonged lifetime of 6.1 h at a proper Cs/Pb ratio.

Efficient All-Inorganic Perovskite Light-Emitting Diodes with Cesium Tungsten Bronze as a Hole-Transporting Layer

The realization of high-performance optoelectronic devices requires excellent charge-transporting layers and efficient carrier recombination. Herein, we synthesized cesium tungsten bronze (Cs_0.32WO₃) nanocrystals and utilized them as the hole-transporting material to fabricate all-inorganic perovskite light-emitting diodes (PeLEDs). Due to the excellent carrier balance characteristics via comparison between the hole-only device and electron-only device, the all-inorganic PeLEDs with CsPbBr₃ as the light-emitting layer present the maximum current efficiency of 31.51 cd/A and external quantum efficiency (EQE) of 8.48%, which are self-evidently enhanced compared with the PEDOT:PSS (14.78 cd/A, 4.03%) and WO₃ (24.75 cd/A, 6.18%) based devices. Considering the remarkably improved device performance, the proposed HTL of Cs_0.32WO₃ is promising, acting as a favorable building block for high-efficiency light-emitting devices.

Enhancement of the optical properties of CsPbBr3 perovskite nanocrystals using three different solvents

Green-emitting CsPbBr₃ perovskite nanocrystals were synthesized by the modified hot-injection method using three different solvents. The produced nanocrystals showed a narrow green emission band centered at 515-520 nm with full width at half-maximum (FWHM) values of approximately 18-20 nm. The highest photoluminescence quantum yield (PLQY) was obtained for the nanocrystal sample synthesized using a paraffin liquid solvent, with a value of 70.1% under excitation at 450 nm. The CsPbBr₃ nanocrystals film light-emitting diodes (LED) chip module showed a luminous efficacy of 40.7lm/W_rad. The white LED (WLED) with green CsPbBr₃ and red CsPbI₃ nanocrystal films emitted bluish-white light with a high color rendering index of 89, and the luminous efficacy of the WLED reached 16.3lm/W_rad.

A solution-processed ternary copper halide thin films for air-stable and deep-ultraviolet-sensitive photodetector

Recently, the newly emerging lead-halide perovskites have received tremendous attention in the photodetection field because of their intrinsic large light absorption and high well-balanced carrier transport characteristics. Unfortunately, the issue of instability and the existence of toxic lead cations have greatly restricted their practical applications and future commercialization. Furthermore, the previous studies on perovskite photodetectors mainly operate in visible and near-infrared light region, and there are practically no relevant reports aimed at the deep-ultraviolet (DUV) region. In this study, an air-stable and DUV-sensitive photoconductive detector was demonstrated with a solution-processed ternary copper halides Cs₃Cu₂I₅ thin films as the light absorber. The proposed photodetector is very sensitive to wavelengths of light below 320 nm and unresponsive to the visible light. Because of the high material integrity and large surface coverage of the Cs₃Cu₂I₅ thin films, the detector presents an outstanding photodetection performance with a photoresponsivity of ∼17.8 A W^-1, specific detectivity of 1.12 × 10¹² Jones, and fast response speed of 465/897 μs, superior to previously reported DUV photodetectors based on other material systems. Unlike traditional lead-halide perovskites, the lead-free Cs₃Cu₂I₅ shows remarkable stability against heat, UV light, and environmental oxygen/moisture. Thus, the unsealed photodetector demonstrates good operation stability for 11 h of continuous running in open air. Even after 80-day storage in ambient air, its photodetection capability can nearly be maintained. The results suggest that non-toxic Cs₃Cu₂I₅ could be a potential candidate for stable and environment friendly DUV detectors, enabling an assembly of optoelectronic systems in the future.

Unexpected bowing band evolution in an all-inorganic CsSn1-x Pb x Br3 perovskite

We theoretically investigated the structural and electronic properties of the all-inorganic perovskite CsSn_1−xPb_xBr₃, compared with the mixed perovskite compound MA_yCs_1−ySn_1−xPb_xBr₃, based on first-principle calculations. It has been demonstrated that Pb and Sn atoms are inclined to occupy the lattice sites uniformly in the all-inorganic perovskite, and this is distinguished from the most stable configurations observed in the mixed Cs-MA system. It is interesting that small Sn atoms prefer to stay close to the large MA⁺ cations, leading to smaller local structural distortion. Through spin-orbital coupling calculations, we found non-linear bowing band evolution in the all-inorganic mixed Sn–Pb system with a small bowing parameter (b = 0.35), while the band gap of MA_yCs_1−ySn_1−xPb_xBr₃ was clearly reduced as the ratio of MA was around 0.5 (y ≥ 0.25). We determined the bowing band evolution in the mixed cation perovskites and the intrinsic electronic deficiency of the all-inorganic perovskite to obtain the optimal band gap.

We theoretically investigated the structural and electronic properties of the all-inorganic perovskite CsSn_1−xPb_xBr₃, compared with the mixed perovskite compound MA_yCs_1−ySn_1−xPb_xBr₃, based on first-principle calculations.

Micro- and Nanopatterning of Halide Perovskites Where Crystal Engineering for Emerging Photoelectronics Meets Integrated Device Array Technology

Tremendous efforts have been devoted to developing thin film halide perovskites (HPs) for use in high-performance photoelectronic devices, including solar cells, displays, and photodetectors. Furthermore, structured HPs with periodic micro- or nanopatterns have recently attracted significant interest due to their potential to not only improve the efficiency of an individual device via the controlled arrangement of HP crystals into a confined geometry, but also to technologically pixelate the device into arrays suitable for future commercialization. However, micro- or nanopatterning of HPs is not usually compatible with conventional photolithography, which is detrimental to ionic HPs and requires special techniques. Herein, a comprehensive overview of the state-of-the-art technologies used to develop micro- and nanometer-scale HP patterns, with an emphasis on their controlled microstructures based on top-down and bottom-up approaches, and their potential for future applications, is provided. Top-down approaches include modified conventional lithographic techniques and soft-lithographic methods, while bottom-up approaches include template-assisted patterning of HPs based on lithographically defined prepatterns and self-assembly. HP patterning is shown here to not only improve device performance, but also to reveal the unprecedented functionality of HPs, leading to new research areas that utilize their novel photophysical properties.

Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes

In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described.

Rational Interface Engineering for Efficient Flexible Perovskite Light-Emitting Diodes

Although perovskite light-emitting diodes (PeLEDs) are promising for next-generation displays and lighting, their efficiency is still considerably below that of conventional inorganic and organic counterparts. Significant efforts in various aspects of the electroluminescence process are required to achieve high-performance PeLEDs. Here, we present an improved flexible PeLED structure based on the rational interface engineering for energy-efficient photon generation and enhanced light outcoupling. The interface-stimulated crystallization and defect passivation of the perovskite emitter are synergistically realized by tuning the underlying interlayer, leading to the suppression of trap-mediated nonradiative recombination losses. Besides approaching highly emissive perovskite layers, the outcoupling of trapped light is also enhanced by combining the silver nanowires-based electrode with quasi-random nanopatterns on flexible plastic substrate. Upon the collective optimization of the device structure, a record external quantum efficiency of 24.5% is achieved for flexible PeLEDs based on green-emitting CsPbBr₃ perovskite.

Silver-Bismuth Bilayer Anode for Perovskite Nanocrystal Light-Emitting Devices

Perovskite nanocrystal light-emitting devices (PNC LEDs) exhibit great potential in display and lighting applications. Balanced hole and electron injection in the light-emitting layer is undoubtedly an effective way to improve LED performance. Here, bismuth (Bi) was introduced into PNC LEDs to form a silver-bismuth (Ag-Bi) bilayer anode. Ag diffused into a defective 2 nm thick Bi layer to form an alloy-like state that promoted hole injection, reduced the charge transfer resistance, and enhanced charge transfer, leading to more balanced hole-electron carriers in the emission layer through hole injection enhancement. As a result, the turn-on voltage and brightness changed from 2.41 V and 2200 cd m^-2, respectively, for CsPb_1-xZn_xI₃-based LEDs with a Ag monolayer anode to 2.2 V and 3714 cd m^-2, respectively, for devices with a Ag-Bi bilayer anode. In addition, the performance of CsPbI₃ and CsPbBrI₂ PNC-based LEDs has also been effectively improved by using a Ag-Bi bilayer anode.

Improved performance of pure red perovskite light-emitting devices based on CsPb(Br1-xIx)3 with variable content of iodine and bromine

All-inorganic cubic α-CsPbI₃ perovskite for red perovskite light-emitting device (PeLED) applications is suffering from a phase transition. Unstable black α phase tends to transit to yellow δ phase under ambient conditions, which results in poor performance of the CsPbI₃-based PeLEDs. Partial replacement of iodine anion with a comparatively smaller bromine anion in the perovskite film can effectively adjust the Goldschmidt tolerance factor and stabilize the α-phase. A phase-stable CsPb(Br_1-xI_x)₃ perovskite has been obtained at low annealing temperature of 50°C by tuning the iodine-to-bromine ratios. A PeLED with pure red emission based on the CsPb(Br_0.43I_0.57)₃ perovskite has been demonstrated. The maximum luminance and efficiency were 2200cd/m² and 0.38 cd/A, respectively. Moreover, the PTAA layer was introduced between the PEDOT:PSS and perovskite film to improve the surface morphologies of perovskite. As a result, red PeLEDs with a maximum luminance of 2765cd/m² have been achieved.

Perovskite-Carbon Nanotube Light-Emitting Fibers

Active fibers with electro-optic functionalities are promising building blocks for the emerging and rapidly growing field of fiber and textile electronics. Yet, there remains significant challenges that require improved understanding of the principles of active fiber assembly to enable the development of fiber-shaped devices characterized by having a small diameter, being lightweight, and having high mechanical strength. To this end, the current frameworks are insufficient, and new designs and fabrication approaches are essential to accommodate this unconventional form factor. Here, we present a first demonstration of a pathway that effectively integrates the foundational components meeting such requirements, with the use of a flexible and robust conductive core carbon nanotube fiber and an organic-inorganic emissive composite layer as the two critical elements. We introduce an active fiber design that can be realized through an all solution-processed approach. We have implemented this technique to demonstrate a three-layered light-emitting fiber with a coaxially coated design.

Improving the Performance and Stability of Perovskite Light-Emitting Diodes by a Polymeric Nanothick Interlayer-Assisted Grain Control Process

CsPbBr₃ is a promising light-emitting material due to its wet solution processability, high photoluminescence quantum yield (PLQY), narrow color spectrum, and cost-effectiveness. Despite such advantages, the morphological defects, unsatisfactory carrier injection, and stability issues retard its widespread applications in light-emitting devices (LEDs). In this work, we demonstrated a facile and cost-effective method to improve the morphology, efficiency, and stability of the CsPbBr₃ emissive layer using a dual polymeric encapsulation governed by an interface-assisted grain control process (IAGCP). An eco-friendly low-cost hydrophilic polymer poly(vinylpyrrolidone) (PVP) was blended into the CsPbBr₃ precursor solution, which endows the prepared film with a better surface coverage with a smoothened surface. Furthermore, it is revealed that inserting a thin PVP nanothick interlayer at the poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS)/emissive layer interface further promotes the film quality and the performance of the derived LED. It is mainly attributed to three major consequences: (i) reduced grain size of the emissive layer, which facilitates charge recombination, (ii) reduced current leakage due to the enhanced electron-blocking effect, and (iii) improved color purity and air stability owing to better defect passivation. As a result, the optimized composite emissive film can retain the luminescence properties even on exposure to ambient conditions for 80 days and ∼62% of its initial PL intensity can be preserved after 30 days of storage without any encapsulation.

Density Functional Study of Cubic, Tetragonal, and Orthorhombic CsPbBr3 Perovskite

Cesium lead bromide (CsPbBr3) perovskite has recently gained significance owing to its rapidly increasing performance when used for light-emitting devices. In this study, we used density functional theory to determine the structural, electronic, and optical properties of the cubic, tetragonal, and orthorhombic temperature-dependent phases of CsPbBr3 perovskite using the full-potential linear augmented plane wave method. The electronic properties of CsPbBr3 perovskite have been investigated by evaluating their changes upon exerting spin-orbit coupling (SOC). The following exchange potentials were used: the local density approximation (LDA), Perdew-Burke-Ernzerhof generalized gradient approximation (PBE-GGA), Engel-Vosko GGA (EV-GGA), Perdew-Burke-Ernzerhof GGA revised for solids (PBEsol-GGA), modified Becke-Johnson GGA (mBJ-GGA), new modified Becke-Johnson GGA (nmBJ-GGA), and unmodified Becke-Johnson GGA (umBJ-GGA). Our band structure results indicated that the cubic, tetragonal, and orthorhombic phases have direct energy bandgaps. By including the SOC effect in the calculations, the bandgaps computed with mBJ-GGA and nmBJ-GGA were found to be in good agreement with the experimental results. Additionally, despite the large variations in their lattice constants, the three CsPbBr3 phases possessed similar optical properties. These results demonstrate a wide temperature range of operation for CsPbBr3.

Facile Fabrication of Stretchable Touch-Responsive Perovskite Light-Emitting Diodes Using Robust Stretchable Composite Electrodes

Perovskite light-emitting diode (PeLED) has been vigorously developed in recent years. As it has demonstrated good performance on the rigid substrates, the next important direction of PeLED is its integration with stretchable components to realize stretchable, responsive device. Here, we describe a facile fabrication of stretchable perovskite light-emissive touch-responsive devices (PeLETDs) by utilizing highly transparent and conductive polyurethane/silver nanowires (PU/AgNWs) as the electrode. Meanwhile, a stretchable tricomposite perovskite emissive layer was developed by blending a small amount of poly(ethylene oxide) (PEO) and poly(vinylpyrrolidone) (PVP) with CsPbBr₃. Additionally, a thin PVP layer was introduced at the bottom of the emissive layer. On one hand, it can further improve the morphology of the emissive layer; on the other hand, it can serve as an electron-injection barrier to reduce the high nonradiative recombination at the corresponding interface. Further, to fulfill the responsive function of the fabricated PeLEDs, a poly(ethylene terephthalate) (PET) spacer with a 100 μm thickness was inserted between the top electrode and the emissive layer. A stretchable PeLETD is finally demonstrated to possess a low turn-on voltage of 2 V with a brightness of 380.5 cd m^-2 at 7.5 V and can sustain 30% uniaxial strain with a small luminance variation of 24%. More interestingly, our stretchable PeLETD exhibited high stability, which could be well touch responsivity, where the luminance is on/off switched for 300 cycles by repeatedly applying pressure.

Tightly Compacted Perovskite Laminates on Flexible Substrates via Hot-Pressing

Pressure and temperature are powerful tools applied to perovskites to achieve recrystallization. Lamination, based on recrystallization of perovskites, avoids the limitations and improves the compatibility of materials and solvents in perovskite device architectures. In this work, we demonstrate tightly compacted perovskite laminates on flexible substrates via hot-pressing and investigate the effect of hot-pressing conditions on the lamination qualities and optical properties of perovskite laminates. The optimized laminates achieved at a temperature of 90 °C and a pressure of 10 MPa could sustain a horizontal pulling pressure of 636 kPa and a vertical pulling pressure of 71 kPa. Perovskite laminates exhibit increased crystallinity and a crystallization orientation preference to the (100) direction. The optical properties of laminated perovskites are almost identical to those of pristine perovskites, and the photoluminescence quantum yield (PLQY) survives the negative impact of thermal degradation. This work demonstrates a promising approach to physically laminating perovskite films, which may accelerate the development of roll-to-roll printed perovskite devices and perovskite tandem architectures in the future.

Photoluminescence Loss and Recovery of α-CsPbI3 Quantum Dots Originated from Chemical Equilibrium Shift of Oleylammonium

α-CsPbI₃ perovskite quantum dots (PQDs) have great potentials in red-emitting LED and solar cell applications. However, their instability with quick photoluminescence loss with time greatly limits their development. In this study, we found that the nonluminous aged α-CsPbI₃ PQDs instantly regained fluorescence emission after a surface treatment with trioctylphosphine. Meanwhile, this surface treatment also worked on fresh α-CsPbI₃ PQDs to enhance photoluminescence emission. The structures and compositions of fresh and aged PQDs before and after surface treatment were analyzed in detail. We demonstrated that a surface chemical equilibrium shift mechanism involving oleylammonium led to the PL loss and recovery of α-CsPbI₃ PQDs. This chemical equilibrium shift also played an important role in other PQD stabilities against long-term storage, temperature, UV irradiation and ethanol, which were all significantly improved after treatment. The treated α-CsPbI₃ PQDs were phase stable for more than 6 months. Oleic acid and oleylamine are common ligands used in PQD syntheses; this study shall promote the understanding of PQD surface chemistry and the preparation of stable α-CsPbI₃ PQDs.

High-Brightness Perovskite Light-Emitting Diodes Using a Printable Silver Microflake Contact

Achieving efficient devices while maintaining a high fabrication yield is a key challenge in the fabrication of solution-processed, perovskite-based light-emitting diodes (PeLEDs). In this respect, pinholes in the solution-processed perovskite layers are a major obstacle. These are usually mitigated using organic electron-conducting planarization layers. However, these organic interlayers are unstable under applied bias in air and suffer from limited charge carrier mobility. In this work, we present a high brightness p-i-n PeLED based on a novel blade-coated silver microflake (SMF) rear electrode, which allows for a low-cost nanocrystalline ZnO inorganic electron-transporting layer to be used. This novel SMF contact is crucial for achieving high performance as it prevents the electrical shorting suffered when standard thermally evaporated silver rear contacts are used. The fabricated PeLEDs exhibit an excellent maximum luminance of 98,000 cd/m², a maximum current efficiency of 22.3 cd/A, and a high external quantum efficiency of 4.6% under 5.9 V forward bias. The SMF rear contact can be printed and scaled at low cost to large areas and applied to flexible devices.

CsPbBr3 nanowire polarized light-emitting diodes through mechanical rubbing

CsPbBr₃ nanowire polarized light-emitting diodes with low turn-on voltage were obtained through mechanical rubbing combined with an optimal device structure.

A simple multiple centrifugation method for large-area homogeneous perovskite CsPbBr3 films with optical lasing

Large scale cesium lead-halide (CsPbX₃, X = Cl, Br, and I) perovskite films have become the basis of laser applications.

A facile method for preparing Yb3+-doped perovskite nanocrystals with ultra-stable near-infrared light emission

Colloidal all-inorganic cesium lead halide (CsPbX₃, X = Cl, Br, I) nanocrystals (NCs) are very important optoelectronic materials and have been successfully utilized as bright light sources and high efficiency photovoltaics due to their facile solution processability. Recently, rare-earth dopants have opened a new pathway for lead halide perovskite NCs for applications in near-infrared wave bands. However, these materials still suffer from serious environmental instability. In this study, we have successfully developed a facile method for fabricating all-inorganic SiO₂-encapsulated Yb³⁺-doped CsPbBr₃ NCs by slowly hydrolyzing the organosilicon precursor in situ. Experimental results showed that the Yb³⁺ ions were uniformly distributed in the NCs, and the whole NCs were completely encapsulated by a dense SiO₂ layer. The as-prepared SiO₂-encapsulated NCs can emit a strong near-infrared (985 nm) photoluminescence, which originates from the intrinsic luminescence of Yb³⁺ in the NCs, pumped by the perovskite host NCs. Meanwhile, the SiO₂-encapsulated NCs possessed excellent high PLQYs, narrow FWHM, and excellent environmental stability under a room atmosphere for over 15 days. We anticipate that this work will be helpful for promoting the optical properties and environmental stability of perovskite NCs and expanding their practical applications to near infrared photodetectors and other optoelectronic devices.

A facile method for fabricating CsPbBr₃:Yb³⁺@SiO₂ NCs which guarantees high PLQY and excellent stability at the same time.

Preventing Anion Exchange between Perovskite Nanocrystals by Confinement in Porous SiO2 Nanobeads

All-inorganic CsPbX₃ (X = Cl, Br, I) perovskite nanocrystals (NCs) are highly attractive due to their outstanding optical and electrical properties. However, poor stability and easy anion exchanges between CsPbX₃ nanocrystals with different halides limit their applications in light-emitting diodes (LEDs). To solve the problems, we developed an approach to in situ synthesize CsPbX₃ NCs into porous silica colloidal spheres, which can effectively prevent anion exchange and increase photo stability. Based on our results, we first proved that the anion exchange between CsPbX₃ nanocrystals is mainly driven by physical collision of the nanocrystals, not requiring a bridge such as a solvent. We subsequently used an optimized ratio of green, red, and blue SiO₂/CsPbX₃ composites as solid-state luminescent materials to fabricate single-layer white light-emitting diodes (WLEDs). No anion exchanges have been observed in the LED fabrication and lighting process.

Optical and structural properties of CsPbBr3 perovskite quantum dots/PFO polymer composite thin films

The aim of this study is to investigate the optical and structural properties of polymer/perovskite quantum dots (QDs) composite thin films and estimate the applicability of using these blends as active materials in photonic devices. A solution has been utilized, which is processed based on conjugated polymer and perovskite QDs composite films. The incorporation of CsPbBr₃ QDs, with various weight ratios, influences the structure of the thin films, as proven by several techniques. The results of the study showed that the surface of the poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO)/CsPbBr₃ thin films improved, when compared to that of the pristine CsPbBr₃ thin film. The increase in the steepness parameter and decrease in both the energy gaps and Urbach tail, upon the increment of CsPbBr₃ QDs, can be attributed to the decrease in the localized density of electronic states within the forbidden band gap of the hybrids. The overlap between the absorption spectrum of PFO and emission spectrum of CsPbBr₃ QDs, and the enhancement in the emission peak of CsPbBr₃ in the blends, confirmed the efficient non-radiative energy transfer between them.

Lead-Free Perovskites for Lighting and Lasing Applications: A Minireview

Research on materials with perovskite crystal symmetry for photonics applications represent a rapidly growing area of the photonics development due to their unique optical and electrical properties. Among them are high charge carrier mobility, high photoluminescence quantum yield, and high extinction coefficients, which can be tuned through all visible range by a controllable change in chemical composition. To date, most of such materials contain lead atoms, which is one of the obstacles for their large-scale implementation. This disadvantage can be overcome via the substitution of lead with less toxic chemical elements, such as Sn, Bi, Yb, etc., and their mixtures. Herein, we summarized the scientific works from 2016 related to the lead-free perovskite materials with stress on the lasing and lighting applications. The synthetic approaches, chemical composition, and morphology of materials, together with the optimal device configurations depending on the material parameters are summarized with a focus on future challenges.