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Wang Y, Wang S, Zhang Y, Cheng Z, Yang D, Wang Y, Wang T, Cheng L, Wu Y, Hao Y. Piezoelectricity in wide bandgap semiconductor 2D crystal GaN nanosheets. NANOSCALE 2024. [PMID: 39052086 DOI: 10.1039/d4nr01377h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Gallium nitride (GaN) exhibits various potential applications in optics and optoelectronics due to its outstanding physical characteristics, including a wide direct bandgap, strong deep-ultraviolet emission, and excellent electron transport properties. However, research on the piezoelectric and related properties of GaN nanosheets are scarce, as previous small-scale GaN investigations have mainly concentrated on nanowires and nanotubes. Here, we report a strategy for growing 2D GaN nanosheets using chemical vapor deposition on Ga/W liquid-phase substrates. Additionally, utilizing scanning probe techniques, it has been observed that 700 nm-thick GaN nanosheets demonstrate a piezoelectric constant of deff33 = 1.53 ± 0.21 pm V-1 and possess the capability to effectively modulate the Schottky barrier. The piezoelectric characteristics of 2D GaN are offering new options for innovative applications in various fields, including energy harvesting, electronics, sensing, and communications.
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Affiliation(s)
- Yong Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, China
| | - Shaopeng Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, China
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
| | - Yu Zhang
- Department of Physics, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Zixuan Cheng
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, China
| | - Dingyi Yang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, China
- INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel Boulet, Varennes, QC J3X 1P7, Canada
| | - Yongmei Wang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
| | - Tingting Wang
- School of Physics, Ningxia University, No. 489 Helanshan Rd., Xixia District, Yinchuan 750021, China
| | - Liang Cheng
- School of Physics, Ningxia University, No. 489 Helanshan Rd., Xixia District, Yinchuan 750021, China
| | - Yizhang Wu
- Department of Applied Physical Sciences, The University of North Carolina at Chapel Hill, Chapel Hill, NC, 27514, USA
| | - Yue Hao
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, China
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Ali A, Lee J, Kim K, Oh H, Yi GC. Highly Sensitive and Fast Responding Flexible Force Sensors Using ZnO/ZnMgO Coaxial Nanotubes on Graphene Layers for Breath Sensing. Adv Healthc Mater 2024; 13:e2304140. [PMID: 38444227 DOI: 10.1002/adhm.202304140] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Revised: 02/08/2024] [Indexed: 03/07/2024]
Abstract
The authors report the fabrication of highly sensitive, rapidly responding flexible force sensors using ZnO/ZnMgO coaxial nanotubes grown on graphene layers and their applications in sleep apnea monitoring. Flexible force sensors are fabricated by forming Schottky contacts to the nanotube array, followed by the mechanical release of the entire structure from the host substrate. The electrical characteristics of ZnO and ZnO/ZnMgO nanotube-based sensors are thoroughly investigated and compared. Importantly, in force sensor applications, the ZnO/ZnMgO coaxial structure results in significantly higher sensitivity and a faster response time when compared to the bare ZnO nanotube. The origin of the improved performance is thoroughly discussed. Furthermore, wireless breath sensing is demonstrated using the ZnO/ZnMgO pressure sensors with custom electronics, demonstrating the feasibility of the sensor technology for health monitoring and the potential diagnosis of sleep apnea.
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Affiliation(s)
- Asad Ali
- Department of Physics and Astronomy, Institute of Applied Physics (IAP), and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
| | - Jamin Lee
- Department of Physics and Astronomy, Institute of Applied Physics (IAP), and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
- Interdisciplinary Program in Neuroscience, College of Science, Seoul National University, Seoul, 08826, South Korea
| | - Kyoungho Kim
- Department of Physics and Astronomy, Institute of Applied Physics (IAP), and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
| | - Hongseok Oh
- Department of Physics, Integrative Institute of Basic Sciences (IIBS), and Department of Intelligent Semiconductors, Soongsil University, Seoul, 06978, South Korea
| | - Gyu-Chul Yi
- Department of Physics and Astronomy, Institute of Applied Physics (IAP), and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
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3
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Chen C, Yu Q, Liu S, Qin Y. Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability. ACS NANO 2024; 18:13607-13617. [PMID: 38747681 DOI: 10.1021/acsnano.4c00088] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
Piezotronic effect utilizing strain-induced piezoelectric polarization to achieve interfacial engineering in semiconductor nanodevices exhibits great advantages in applications such as human-machine interfacing, micro/nanoelectromechanical systems, and next-generation sensors and transducers. However, it is a big challenge but highly desired to develop a highly sensitive piezotronic device based on piezoelectric semiconductor wafers and thus to push piezotronics toward wafer-scale applications. Here, we develop a bicrystal barrier-based piezotronic transistor for highly sensitive pressure sensing by p-GaN single-crystal wafers. Its pressure sensitivity can be as high as 19.83 meV/MPa, which is more than 15 times higher than previous bulk-material-based piezotronic transistors and reaches the level of nanomaterial-based piezotronic transistors. Moreover, it can respond to a very small strain of 3.3 × 10-6 to 1.1 × 10-5 with high gauge factors of 1.45 × 105 to 1.38 × 106, which is a very high value among various strain sensors. Additionally, it also exhibits high stability (current stability of 97.32 ± 2.05% and barrier height change stability of 95.85 ± 3.43%) and high linearity (R2 ∼ 0.997 ± 0.002) in pressure sensing. This work proves the possibility of designing a bicrystal barrier as the interface to obtain a strong piezotronic effect and highly sensitive piezotronic devices based on wafers, which contributes to their applications.
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Affiliation(s)
- Changyu Chen
- Institute of Nanoscience and Nanotechnology, School of Materials and Energy, Lanzhou University, Lanzhou, Gansu 730000, China
| | - Qiuhong Yu
- Institute of Nanoscience and Nanotechnology, School of Materials and Energy, Lanzhou University, Lanzhou, Gansu 730000, China
- Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, School of Physics and Engineering, Henan University of Science and Technology, Luoyang, Henan 471000, China
| | - Shuhai Liu
- Institute of Nanoscience and Nanotechnology, School of Materials and Energy, Lanzhou University, Lanzhou, Gansu 730000, China
| | - Yong Qin
- MIIT Key Laboratory of Complex-field Intelligent Exploration, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
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Ge R, Yu Q, Zhou F, Liu S, Qin Y. Dual-modal piezotronic transistor for highly sensitive vertical force sensing and lateral strain sensing. Nat Commun 2023; 14:6315. [PMID: 37813847 PMCID: PMC10562489 DOI: 10.1038/s41467-023-41983-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Accepted: 09/25/2023] [Indexed: 10/11/2023] Open
Abstract
Mechanical sensors are mainly divided into two types (vertical force sensing and lateral strain sensing). Up to now, one sensor with two working modes is still a challenge. Here, we demonstrate a structural design concept combing a piezoelectric nano/microwire with a flexible polymer with protrusions that enables a dual-modal piezotronic transistor (DPT) with two working modes for highly sensitive vertical force sensing and lateral strain sensing. For vertical force sensing, DPT exhibits a force sensitivity up to 221.5 N-1 and a minimum identifiable force down to 21 mN, corresponding to a pressure sensitivity of 1.759 eV/MPa. For lateral strain sensing, DPT can respond to a large compression strain (~5.8%) with an on/off ratio up to 386.57 and a gauge factor up to 8988.6. It is a universal design that can integrate vertical force sensing and lateral strain sensing into only one nanodevice, providing a feasible strategy for multimodal devices.
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Affiliation(s)
- Rui Ge
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi, 710071, China
- Institute of Nanoscience and Nanotechnology, School of Materials and Energy, Lanzhou University, Lanzhou, Gansu, 730000, China
| | - Qiuhong Yu
- Institute of Nanoscience and Nanotechnology, School of Materials and Energy, Lanzhou University, Lanzhou, Gansu, 730000, China
- Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, School of Physics and Engineering, Henan University of Science and Technology, Luoyang, Henan, 471000, China
| | - Feng Zhou
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000, China
| | - Shuhai Liu
- Institute of Nanoscience and Nanotechnology, School of Materials and Energy, Lanzhou University, Lanzhou, Gansu, 730000, China.
| | - Yong Qin
- Institute of Nanoscience and Nanotechnology, School of Materials and Energy, Lanzhou University, Lanzhou, Gansu, 730000, China.
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Liu J, Yu S, Zhao X, Sun X, Meng Q, Liu S, Xu Y, Lv C, Li J. Resolution enhancement of tongue tactile image based on deconvolution neural network. J Texture Stud 2023; 54:456-469. [PMID: 37224845 DOI: 10.1111/jtxs.12778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2022] [Accepted: 04/26/2023] [Indexed: 05/26/2023]
Abstract
To reproduce the tactile perception of multiple contacts on the human tongue surface, it is necessary to use a pressure measurement device with high spatial resolution. However, reducing the size of the array sensing unit and optimizing the lead arrangement still pose challenges. This article describes a deconvolution neural network (DNN) for improving the resolution of tongue surface tactile imaging, which alleviates this tradeoff between tactile sensing performance and hardware simplicity. The model can work without high-resolution tactile imaging data of tongue surface: First, in the compression test using artificial tongues, the tactile image matrix (7 × 7) with low resolution can be acquired by sensor array with a sparse electrode arrangement. Then, through finite element analysis modeling, combined with the distribution rule of additional stress on the two-dimensional plane, the pressure data around the existing detection points are calculated, further expanding the tactile image matrix data amount. Finally, the DNN, based on its efficient nonlinear reconstruction attributes, uses the low-resolution and high-resolution tactile imaging matrix generated by compression test and finite element simulation, respectively, to train, and outputs high-resolution tactile imaging information (13 × 13) closer to the tactile perception of the tongue surface. The results show that the overall accuracy of the tactile image matrix calculated by this model is above 88%. Then, we deduced the spatial difference graph of the resilience index of the three kinds of ham sausages through the high-resolution tactile imaging matrix.
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Affiliation(s)
- Jingjing Liu
- College of Automation Engineering, Northeast Electric Power University, Jilin, China
| | - Shixin Yu
- College of Automation Engineering, Northeast Electric Power University, Jilin, China
| | - Xiaoyan Zhao
- College of Automation Engineering, Northeast Electric Power University, Jilin, China
| | - Xiaojun Sun
- College of Automation Engineering, Northeast Electric Power University, Jilin, China
| | - Qi Meng
- College of Automation Engineering, Northeast Electric Power University, Jilin, China
| | - Shikun Liu
- College of Automation Engineering, Northeast Electric Power University, Jilin, China
| | - Yifei Xu
- College of Automation Engineering, Northeast Electric Power University, Jilin, China
| | - Chuang Lv
- College of Automation Engineering, Northeast Electric Power University, Jilin, China
| | - Jiangyong Li
- College of Automation Engineering, Northeast Electric Power University, Jilin, China
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Carlos C, Li J, Zhang Z, Berg KJ, Wang Y, Wang X. Strain-Correlated Piezoelectricity in Quasi-Two-Dimensional Zinc Oxide Nanosheets. NANO LETTERS 2023; 23:6148-6155. [PMID: 37384822 PMCID: PMC10529621 DOI: 10.1021/acs.nanolett.3c01728] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/01/2023]
Abstract
Two-dimensional (2D) piezoelectric materials have recently drawn intense interest in studying the nanoscale electromechanical coupling phenomenon and device development. A critical knowledge gap exists to correlate the nanoscale piezoelectric property with the static strains often found in 2D materials. Here, we present a study of the out-of-plane piezoelectric property of nanometer-thick 2D ZnO-nanosheets (NS) in correlation to in-plane strains, using in situ via strain-correlated piezoresponse force microscopy (PFM). We show that the strain configuration (either tensile or compressive) can dramatically influence the measured piezoelectric coefficient (d33) of 2D ZnO-NS. A comparison of the out-of-plane piezoresponse is made for in-plane tensile and compressive strains approaching 0.50%, where the measured d33 varies between 2.1 and 20.3 pm V-1 resulting in an order-of-magnitude change in the piezoelectric property. These results highlight the important role of in-plane strain in the quantification and application of 2D piezoelectric materials.
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Affiliation(s)
- Corey Carlos
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, United States
| | - Jun Li
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, United States
| | - Ziyi Zhang
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, United States
| | - Kevin Jordan Berg
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, United States
| | - Yizhan Wang
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, United States
| | - Xudong Wang
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, United States
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Hu J, Dun G, Geng X, Chen J, Wu X, Ren TL. Recent progress in flexible micro-pressure sensors for wearable health monitoring. NANOSCALE ADVANCES 2023; 5:3131-3145. [PMID: 37325539 PMCID: PMC10262959 DOI: 10.1039/d2na00866a] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Accepted: 02/16/2023] [Indexed: 06/17/2023]
Abstract
In recent years, flexible micro-pressure sensors have been used widely in wearable health monitoring applications due to their excellent flexibility, stretchability, non-invasiveness, comfort wearing and real-time detection. According to the working mechanism of the flexible micro-pressure sensor, it can be classified as piezoresistive, piezoelectric, capacitive and triboelectric types. Herein, an overview of flexible micro-pressure sensors for wearable health monitoring is presented. The physiological signaling and body motions contain a lot of health status information. Thus, this review focuses on the applications of flexible micro-pressure sensors in these fields. Additionally, the contents of sensing mechanism, sensing materials and performance of flexible micro-pressure sensors are introduced in detail. Finally, we predict the future research directions of the flexible micro-pressure sensors, and discuss the challenges in practical applications.
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Affiliation(s)
- Jianguo Hu
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University Beijing 100084 China
| | - Guanhua Dun
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University Beijing 100084 China
| | - Xiangshun Geng
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University Beijing 100084 China
| | - Jing Chen
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University Beijing 100084 China
| | - Xiaoming Wu
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University Beijing 100084 China
| | - Tian-Ling Ren
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University Beijing 100084 China
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8
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Jiang J, Feng W, Wen Y, Yin L, Wang H, Feng X, Pei YL, Cheng R, He J. Tuning 2D Magnetism in Cobalt Monoxide Nanosheets Via In Situ Nickel-Doping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301668. [PMID: 37015006 DOI: 10.1002/adma.202301668] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 03/23/2023] [Indexed: 06/02/2023]
Abstract
Element doping has become an effective strategy to engineer the magnetic properties of two-dimensional (2D) materials and is widely explored in van der Waals layered transition metal dichalcogenides. However, the high-concentration substitution doping of 2D nonlayered metal oxides, which can preserve the original crystal texture and guarantee the homogeneity of doping distribution, is still a critical challenge due to the isotropic bonding of closed-packed structures. In this work, the synthesis of high-quality 2D nonlayered nickel-doped cobalt monoxide nanosheets via in situ atmospheric pressure chemical vapor deposition method is reported. High-resolution transmission electron microscopy confirmed that nickel atoms are doped at the intrinsic cobalt atom sites. The nickel doping concentration is stable at ≈15%, superior to most magnetic dopants doping in 2D materials and metal oxides. Magnetic measurements showed that pristine cobalt monoxide is nonferromagnetic, whereas nickel-doped cobalt monoxide exhibits robust ferromagnetic behavior with a Curie temperature of ≈180 K. Density functional theory calculations reveal that nickel atoms can improve the internal ferromagnetic correlation, giving rise to significant ferromagnetic performance of cobalt monoxide nanosheets. These results provide a valuable case for tuning the competing correlated states and magnetic ordering by substitution doping in 2D nonlayered oxide semiconductors.
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Affiliation(s)
- Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Wenyong Feng
- The State Key Lab of Optoelectronic Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Yan-Li Pei
- The State Key Lab of Optoelectronic Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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9
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Zhou K, Shang G, Hsu HH, Han ST, Roy VAL, Zhou Y. Emerging 2D Metal Oxides: From Synthesis to Device Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207774. [PMID: 36333890 DOI: 10.1002/adma.202207774] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 10/26/2022] [Indexed: 05/26/2023]
Abstract
2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.
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Affiliation(s)
- Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Gang Shang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Hsiao-Hsuan Hsu
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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Wang W, Yang D, Yan X, Wang L, Hu H, Wang K. Triboelectric nanogenerators: the beginning of blue dream. Front Chem Sci Eng 2023. [DOI: 10.1007/s11705-022-2271-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/05/2023]
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Patil SA, Jagdale PB, Singh A, Singh RV, Khan Z, Samal AK, Saxena M. 2D Zinc Oxide - Synthesis, Methodologies, Reaction Mechanism, and Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206063. [PMID: 36624578 DOI: 10.1002/smll.202206063] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Revised: 12/18/2022] [Indexed: 06/17/2023]
Abstract
Zinc oxide (ZnO) is a thermally stable n-type semiconducting material. ZnO 2D nanosheets have mainly gained substantial attention due to their unique properties, such as direct bandgap and strong excitonic binding energy at room temperature. These are widely utilized in piezotronics, energy storage, photodetectors, light-emitting diodes, solar cells, gas sensors, and photocatalysis. Notably, the chemical properties and performances of ZnO nanosheets largely depend on the nano-structuring that can be regulated and controlled through modulating synthetic strategies. Two synthetic approaches, top-down and bottom-up, are mainly employed for preparing ZnO 2D nanomaterials. However, owing to better results in producing defect-free nanostructures, homogenous chemical composition, etc., the bottom-up approach is extensively used compared to the top-down method for preparing ZnO 2D nanosheets. This review presents a comprehensive study on designing and developing 2D ZnO nanomaterials, followed by accenting its potential applications. To begin with, various synthetic strategies and attributes of ZnO 2D nanosheets are discussed, followed by focusing on methodologies and reaction mechanisms. Then, their deliberation toward batteries, supercapacitors, electronics/optoelectronics, photocatalysis, sensing, and piezoelectronic platforms are further discussed. Finally, the challenges and future opportunities are featured based on its current development.
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Affiliation(s)
- Sayali Ashok Patil
- Centre for Nano and Material Science, Jain (Deemed-to-be University), Ramanagra, Bengaluru, Karnataka, 562112, India
| | - Pallavi Bhaktapralhad Jagdale
- Centre for Nano and Material Science, Jain (Deemed-to-be University), Ramanagra, Bengaluru, Karnataka, 562112, India
| | - Ashish Singh
- R&D, Technology and Innovation, Merck- Living Innovation, Sigma Aldrich Chemicals Pvt. Ltd., #12, Bommasandra- Jigni Link Road, Bengaluru, Karnataka, 560100, India
| | - Ravindra Vikram Singh
- R&D, Technology and Innovation, Merck- Living Innovation, Sigma Aldrich Chemicals Pvt. Ltd., #12, Bommasandra- Jigni Link Road, Bengaluru, Karnataka, 560100, India
| | - Ziyauddin Khan
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, SE-60174, Sweden
| | - Akshaya Kumar Samal
- Centre for Nano and Material Science, Jain (Deemed-to-be University), Ramanagra, Bengaluru, Karnataka, 562112, India
| | - Manav Saxena
- Centre for Nano and Material Science, Jain (Deemed-to-be University), Ramanagra, Bengaluru, Karnataka, 562112, India
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Xie L, Zhang Z, Wu Q, Gao Z, Mi G, Wang R, Sun HB, Zhao Y, Du Y. Intelligent wearable devices based on nanomaterials and nanostructures for healthcare. NANOSCALE 2023; 15:405-433. [PMID: 36519286 DOI: 10.1039/d2nr04551f] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Emerging classes of flexible electronic sensors as alternatives to conventional rigid sensors offer a powerful set of capabilities for detecting and quantifying physiological and physical signals from human skin in personal healthcare. Unfortunately, the practical applications and commercialization of flexible sensors are generally limited by certain unsatisfactory aspects of their performance, such as biocompatibility, low sensing range, power supply, or single sensory function. This review intends to provide up-to-date literature on wearable devices for smart healthcare. A systematic review is provided, from sensors based on nanomaterials and nanostructures, algorithms, to multifunctional integrated devices with stretchability, self-powered performance, and biocompatibility. Typical electromechanical sensors are investigated with a specific focus on the strategies for constructing high-performance sensors based on nanomaterials and nanostructures. Then, the review emphasizes the importance of tailoring the fabrication techniques in order to improve stretchability, biocompatibility, and self-powered performance. The construction of wearable devices with high integration, high performance, and multi-functionalization for multiparameter healthcare is discussed in depth. Integrating wearable devices with appropriate machine learning algorithms is summarized. After interpretation of the algorithms, intelligent predictions are produced to give instructions or predictions for smart implementations. It is desired that this review will offer guidance for future excellence in flexible wearable sensing technologies and provide insight into commercial wearable sensors.
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Affiliation(s)
- Liping Xie
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Zelin Zhang
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Qiushuo Wu
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Zhuxuan Gao
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Gaotian Mi
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Renqiao Wang
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Hong-Bin Sun
- Department of Chemistry, Northeastern University, Shenyang, 110819, China
| | - Yue Zhao
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Yanan Du
- Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing, 100084, China
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13
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Zhang H, Tian G, Xiong D, Yang T, Wang S, Sun Y, Jin L, Lan B, Deng L, Yang W, Deng W. Carrier concentration-dependent interface engineering for high-performance zinc oxide piezoelectric device. J Colloid Interface Sci 2023; 629:534-540. [DOI: 10.1016/j.jcis.2022.08.181] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 08/06/2022] [Accepted: 08/30/2022] [Indexed: 11/15/2022]
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14
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Wang Y, Xie W, Peng W, Li F, He Y. Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics. MICROMACHINES 2022; 14:mi14010047. [PMID: 36677109 PMCID: PMC9860666 DOI: 10.3390/mi14010047] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/20/2022] [Accepted: 12/22/2022] [Indexed: 06/02/2023]
Abstract
The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal-semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms' analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.
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Affiliation(s)
- Yitong Wang
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Wanli Xie
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Wenbo Peng
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Fangpei Li
- State Key Laboratory of Solidification Processing, Key Laboratory of Radiation Detection Materials and Devices, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China
| | - Yongning He
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
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15
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Zhang H, Tian G, Xiong D, Yang T, Zhong S, Jin L, Lan B, Deng L, Wang S, Sun Y, Yang W, Deng W. Understanding the Enhancement Mechanism of ZnO Nanorod-based Piezoelectric Devices through Surface Engineering. ACS APPLIED MATERIALS & INTERFACES 2022; 14:29061-29069. [PMID: 35726823 DOI: 10.1021/acsami.2c02371] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
ZnO is a typical piezoelectric semiconductor, and enhancing the piezoelectric output of ZnO-based devices is essential for their efficient applications. Surface engineering is an effective strategy to improve the piezoelectric output of ZnO-based devices, but its unclear regulation mechanism leads to a lack of reasonable guidance for device design. In this work, the regulation effect of the barrier layer in ZnO-based piezoelectric devices is systematically investigated from the carrier perspective through surface engineering, resulting in a significant improvement (nearly 10-fold) in the output performance of piezoelectric devices. The regulation mechanism of the ZnO-Cu2O p-n heterojunction devices on piezoelectric output is revealed in terms of built-in electric field, depletion layer width, and junction capacitance. These findings facilitate further insight into the enhancement mechanism of the piezoelectric output of ZnO-based devices and provide reasonable ideas for efficient device design.
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Affiliation(s)
- Hongrui Zhang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Guo Tian
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Da Xiong
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Tao Yang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Shen Zhong
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Long Jin
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Boling Lan
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Lin Deng
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Shenglong Wang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Yue Sun
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Weiqing Yang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Weili Deng
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
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16
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Park C, Choi M, Lee S, Kim H, Lee T, Billah MM, Jung B, Jang J. Highly Sensitive, Stretchable Pressure Sensor Using Blue Laser Annealed CNTs. NANOMATERIALS 2022; 12:nano12132127. [PMID: 35807963 PMCID: PMC9268723 DOI: 10.3390/nano12132127] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/23/2022] [Revised: 06/10/2022] [Accepted: 06/16/2022] [Indexed: 12/11/2022]
Abstract
A piezoresistive sensor is an essential component of wearable electronics that can detect resistance changes when pressure is applied. In general, microstructures of sensing layers have been adopted as an effective approach to enhance piezoresistive performance. However, the mold-casted microstructures typically have quite a thick layer with dozens of microscales. In this paper, a carbon microstructure is formed by blue laser annealing (BLA) on a carbon nanotube (CNT) layer, which changes the surface morphology of CNTs into carbonaceous protrusions and increases its thickness more than four times compared to the as-deposited layer. Then, the pressure sensor is fabricated using a spin-coating of styrene–ethylene–butylene–styrene (SEBS) elastomer on the BLA CNTs layer. A 1.32 µm-thick pressure sensor exhibits a high sensitivity of 6.87 × 105 kPa−1, a wide sensing range of 278 Pa~40 kPa and a fast response/recovery time of 20 ms, respectively. The stability of the pressure sensor is demonstrated by the repeated loading and unloading of 20 kPa for 4000 cycles. The stretchable pressure sensor was also demonstrated using lateral CNT electrodes on SEBS surface, exhibiting stable pressure performance, with up to 20% stretching.
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17
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Liu K, Zhang W, Zong L, He Y, Zhang X, Liu M, Shi G, Qiao X, Pang X. Dimensional Optimization for ZnO-Based Mechano-ATRP with Extraordinary Activity. J Phys Chem Lett 2022; 13:4884-4890. [PMID: 35617686 DOI: 10.1021/acs.jpclett.2c01106] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Various piezoelectric nanomaterials were utilized in ultrasound-mediated atom transfer radical polymerization (ATRP), owing to their outstanding piezoelectric effect. However, the relationship between the morphology of those piezocatalysts and polymerization has not been clearly established. Herein, we employed different piezoelectric zinc oxide (ZnO) nanomaterials to achieve novel mechano-induced ATRP (mechano-ATRP). Based on the synergistic effect of piezoelectric properties and specific surface area, the catalytic activity of 1D ZnO nanorods (1D-ZnO NRs) with increased aspect ratio outperformed that of 0D ZnO nanoparticles (0D-ZnO NPs). Compared to the conventional ATRP system, this system exhibited extraordinary activity toward the less activated monomer acrylonitrile (67% conversion after 6 h), with a narrow molecular weight distribution (polydispersity index ∼ 1.19). Furthermore, implications of ZnO loading, copper salt amount, degree of polymerization, monomer, and solvent were also studied for the highly efficient mechano-ATRP.
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Affiliation(s)
- Kaixin Liu
- Henan Joint International Research Laboratory of Living Polymerizations and Functional Nanomaterials, Henan Key Laboratory of Advanced Nylon Materials and Application, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Wenjie Zhang
- Henan Joint International Research Laboratory of Living Polymerizations and Functional Nanomaterials, Henan Key Laboratory of Advanced Nylon Materials and Application, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Lingxin Zong
- Henan Joint International Research Laboratory of Living Polymerizations and Functional Nanomaterials, Henan Key Laboratory of Advanced Nylon Materials and Application, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Yanjie He
- Henan Joint International Research Laboratory of Living Polymerizations and Functional Nanomaterials, Henan Key Laboratory of Advanced Nylon Materials and Application, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Xiaomeng Zhang
- Henan Joint International Research Laboratory of Living Polymerizations and Functional Nanomaterials, Henan Key Laboratory of Advanced Nylon Materials and Application, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Minying Liu
- Henan Joint International Research Laboratory of Living Polymerizations and Functional Nanomaterials, Henan Key Laboratory of Advanced Nylon Materials and Application, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Ge Shi
- Henan Joint International Research Laboratory of Living Polymerizations and Functional Nanomaterials, Henan Key Laboratory of Advanced Nylon Materials and Application, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Xiaoguang Qiao
- Henan Joint International Research Laboratory of Living Polymerizations and Functional Nanomaterials, Henan Key Laboratory of Advanced Nylon Materials and Application, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
- College of Materials Engineering; Henan International Joint Laboratory of Rare Earth Composite Materials, Henan University of Engineering, Zhengzhou 451191, China
| | - Xinchang Pang
- Henan Joint International Research Laboratory of Living Polymerizations and Functional Nanomaterials, Henan Key Laboratory of Advanced Nylon Materials and Application, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
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18
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Wu H, Murti BT, Singh J, Yang P, Tsai M. Prospects of Metal-Free Perovskites for Piezoelectric Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104703. [PMID: 35199947 PMCID: PMC9036044 DOI: 10.1002/advs.202104703] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Revised: 01/14/2022] [Indexed: 06/14/2023]
Abstract
Metal-halide perovskites have emerged as versatile materials for various electronic and optoelectronic devices such as diodes, solar cells, photodetectors, and sensors due to their interesting properties of high absorption coefficient in the visible regime, tunable bandgap, and high power conversion efficiency. Recently, metal-free organic perovskites have also emerged as a particular class of perovskites materials for piezoelectric applications. This broadens the chemical variety of perovskite structures with good mechanical adaptability, light-weight, and low-cost processability. Despite these achievements, the fundamental understanding of the underlying phenomenon of piezoelectricity in metal-free perovskites is still lacking. Therefore, this perspective emphasizes the overview of piezoelectric properties of metal-halide, metal-free perovskites, and their recent progress which may encourage material designs to enhance their applicability towards practical applications. Finally, challenges and outlooks of piezoelectric metal-free perovskites are highlighted for their future developments.
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Affiliation(s)
- Han‐Song Wu
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City10607Taiwan
| | - Bayu Tri Murti
- Graduate Institute of Biomedical Materials and Tissue EngineeringTaipei Medical UniversityTaipei City11031Taiwan
- Department of Biomedical Sciences and EngineeringNational Central UniversityTaoyuan City32001Taiwan
| | - Jitendra Singh
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City10607Taiwan
| | - Po‐Kang Yang
- Department of Biomedical Sciences and EngineeringNational Central UniversityTaoyuan City32001Taiwan
- Graduate Institute of Nanomedicine and Medical EngineeringTaipei Medical UniversityTaipei City11031Taiwan
| | - Meng‐Lin Tsai
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City10607Taiwan
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19
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Highly sensitive strain sensors based on piezotronic tunneling junction. Nat Commun 2022; 13:778. [PMID: 35140219 PMCID: PMC8828782 DOI: 10.1038/s41467-022-28443-0] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2021] [Accepted: 01/26/2022] [Indexed: 12/26/2022] Open
Abstract
Piezotronics with capacity of constructing adaptive and seamless interactions between electronics/machines and human/ambient are of value in Internet of Things, artificial intelligence and biomedical engineering. Here, we report a kind of highly sensitive strain sensor based on piezotronic tunneling junction (Ag/HfO2/n-ZnO), which utilizes the strain-induced piezoelectric potential to control the tunneling barrier height and width in parallel, and hence to synergistically modulate the electrical transport process. The piezotronic tunneling strain sensor has a high on/off ratio of 478.4 and high gauge factor of 4.8 × 105 at the strain of 0.10%, which is more than 17.8 times larger than that of a conventional Schottky-barrier based strain sensor in control group as well as some existing ZnO nanowire or nanobelt based sensors. This work provides in-depth understanding for the basic mechanism of piezotronic modulation on tunneling junction, and realizes the highly sensitive strain sensor of piezotronic tunneling junction on device scale, which has great potential in advanced micro/nano-electromechanical devices and systems. Strain-induced piezoelectric polarization can be used to modulate the interface electrical transport. Here, the authors achieved a piezotronic tunneling strain sensor at device scale with optimized performance based on the structure of Ag/HfO2/n-ZnO.
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20
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Nie B, Liu S, Qu Q, Zhang Y, Zhao M, Liu J. Bio-inspired flexible electronics for smart E-skin. Acta Biomater 2022; 139:280-295. [PMID: 34157454 DOI: 10.1016/j.actbio.2021.06.018] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/08/2021] [Revised: 06/06/2021] [Accepted: 06/09/2021] [Indexed: 01/11/2023]
Abstract
"Learning from nature" provides endless inspiration for scientists to invent new materials and devices. Here, we review state-of-the-art technologies in flexible electronics, with a focus on bio-inspired smart skins. This review focuses on the development of E-skin for sensing a variety of parameters such as mechanical loads, temperature, light, and biochemical cues, with a trend of increased integration of multiple functions. It highlights the most recent advances in flexible electronics inspired by animals such as chameleons, squids, and octopi whose bodies have remarkable camouflage, mimicry, or self-healing attributes. Implantable devices, being overlapped with smart E-skin in a broad sense, are included in this review. This review outlines the remaining challenges in flexible electronics and the prospects for future development for biomedical applications. STATEMENT OF SIGNIFICANCE: This article reviews the state-of-the-art technologies of bio-inspired smart electronic skin (E-skin) developed in a "learning-mimicking-creating" (LMC) cycle. We emphasize the most recent innovations in the development of E-skin for sensing physical changes and biochemical cues, and for integrating multiple sensing modalities. We discuss the achievements in implantable materials, wireless communication, and device design pertaining to implantable flexible electronics. This review will provide prospective insights integrating material, electronics, and mechanical engineering viewpoints to foster new ideas for next-generation smart E-skin.
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Affiliation(s)
- Baoqing Nie
- School of Electronic and Information Engineering, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Sidi Liu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Qing Qu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Yiqiu Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Mengying Zhao
- School of Electronic and Information Engineering, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Jian Liu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China.
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21
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Pyo S, Lee J, Bae K, Sim S, Kim J. Recent Progress in Flexible Tactile Sensors for Human-Interactive Systems: From Sensors to Advanced Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005902. [PMID: 33887803 DOI: 10.1002/adma.202005902] [Citation(s) in RCA: 91] [Impact Index Per Article: 30.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2020] [Revised: 11/07/2020] [Indexed: 05/27/2023]
Abstract
Flexible tactile sensors capable of measuring mechanical stimuli via physical contact have attracted significant attention in the field of human-interactive systems. The utilization of tactile information can complement vision and/or sound interaction and provide new functionalities. Recent advancements in micro/nanotechnology, material science, and information technology have resulted in the development of high-performance tactile sensors that reach and even surpass the tactile sensing ability of human skin. Here, important advances in flexible tactile sensors over recent years are summarized, from sensor designs to system-level applications. This review focuses on the representative strategies based on design and material configurations for improving key performance parameters including sensitivity, detection range/linearity, response time/hysteresis, spatial resolution/crosstalk, multidirectional force detection, and insensitivity to other stimuli. System-level integration for practical applications beyond conceptual prototypes and promising applications, such as artificial electronic skin for robotics and prosthetics, wearable controllers for electronics, and bidirectional communication tools, are also discussed. Finally, perspectives on issues regarding further advances are provided.
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Affiliation(s)
- Soonjae Pyo
- Department of Mechanical System Design Engineering, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul, 01811, Republic of Korea
| | - Jaeyong Lee
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Kyubin Bae
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sangjun Sim
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Jongbaeg Kim
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
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22
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Peng Y, Yang N, Xu Q, Dai Y, Wang Z. Recent Advances in Flexible Tactile Sensors for Intelligent Systems. SENSORS (BASEL, SWITZERLAND) 2021; 21:5392. [PMID: 34450833 PMCID: PMC8401379 DOI: 10.3390/s21165392] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Revised: 07/31/2021] [Accepted: 08/05/2021] [Indexed: 11/16/2022]
Abstract
Tactile sensors are an important medium for artificial intelligence systems to perceive their external environment. With the rapid development of smart robots, wearable devices, and human-computer interaction interfaces, flexible tactile sensing has attracted extensive attention. An overview of the recent development in high-performance tactile sensors used for smart systems is introduced. The main transduction mechanisms of flexible tactile sensors including piezoresistive, capacitive, piezoelectric, and triboelectric sensors are discussed in detail. The development status of flexible tactile sensors with high resolution, high sensitive, self-powered, and visual capabilities are focused on. Then, for intelligent systems, the wide application prospects of flexible tactile sensors in the fields of wearable electronics, intelligent robots, human-computer interaction interfaces, and implantable electronics are systematically discussed. Finally, the future prospects of flexible tactile sensors for intelligent systems are proposed.
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Affiliation(s)
| | | | | | | | - Zhiqiang Wang
- Information Science Academy of China Electronics Technology Group Corporation, Beijing 100086, China; (Y.P.); (N.Y.); (Q.X.); (Y.D.)
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23
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Liu X, Wei Y, Qiu Y. Advanced Flexible Skin-Like Pressure and Strain Sensors for Human Health Monitoring. MICROMACHINES 2021; 12:695. [PMID: 34198673 PMCID: PMC8232132 DOI: 10.3390/mi12060695] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/16/2021] [Revised: 06/01/2021] [Accepted: 06/04/2021] [Indexed: 12/24/2022]
Abstract
Recently, owing to their excellent flexibility and adaptability, skin-like pressure and strain sensors integrated with the human body have the potential for great prospects in healthcare. This review mainly focuses on the representative advances of the flexible pressure and strain sensors for health monitoring in recent years. The review consists of five sections. Firstly, we give a brief introduction of flexible skin-like sensors and their primary demands, and we comprehensively outline the two categories of design strategies for flexible sensors. Secondly, combining the typical sensor structures and their applications in human body monitoring, we summarize the recent development of flexible pressure sensors based on perceptual mechanism, the sensing component, elastic substrate, sensitivity and detection range. Thirdly, the main structure principles and performance characteristic parameters of noteworthy flexible strain sensors are summed up, namely the sensing mechanism, sensitive element, substrate, gauge factor, stretchability, and representative applications for human monitoring. Furthermore, the representations of flexible sensors with the favorable biocompatibility and self-driven properties are introduced. Finally, in conclusion, besides continuously researching how to enhance the flexibility and sensitivity of flexible sensors, their biocompatibility, versatility and durability should also be given sufficient attention, especially for implantable bioelectronics. In addition, the discussion emphasizes the challenges and opportunities of the above highlighted characteristics of novel flexible skin-like sensors.
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Affiliation(s)
- Xu Liu
- School of Mechano-Electronic Engineering, Xidian University, Xi’an 710071, China
- School of Mechanical Engineering, Xi’an Aeronautical University, Xi’an 710077, China
| | - Yuan Wei
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi’an 710072, China;
| | - Yuanying Qiu
- School of Mechano-Electronic Engineering, Xidian University, Xi’an 710071, China
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24
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Affiliation(s)
- Rongrong Bao
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Nanoscience and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Center on Nanoenergy Research School of Physical Science and Technology Guangxi University Nanning Guangxi 530004 P. R. China
| | - Juan Tao
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Nanoscience and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Center on Nanoenergy Research School of Physical Science and Technology Guangxi University Nanning Guangxi 530004 P. R. China
- College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Nanoscience and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Center on Nanoenergy Research School of Physical Science and Technology Guangxi University Nanning Guangxi 530004 P. R. China
- College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332-0245 USA
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25
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Liu Q, Jin L, Zhang P, Zhang B, Li Y, Xie S, Li X. Nanofibrous Grids Assembled Orthogonally from Direct-Written Piezoelectric Fibers as Self-Powered Tactile Sensors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:10623-10631. [PMID: 33591708 DOI: 10.1021/acsami.0c22318] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Tactile sensors are indispensable to wearable electronics, but still lack self-powering, high resolution, and flexibility. Herein, we present direct-written piezoelectric poly(vinylidene difluoride) fibers that are orthogonally assembled into nanofibrous grids (NFGs) as self-powered tactile sensors. Five nanofibrous strips (NFSs) are written on a polyurethane film via a uniform-field electrospinning (UFES) process, and two polyurethane films are orthogonally assembled into 5 × 5 NFGs with 25 pixels. Benefited from the mechanical flexibility and helical architecture of UFES fibers, stable piezoelectric outputs have been detected according to different locations or different pressures on an NFS, and a sensitivity of 7.1 mV/kPa is detected from the slope of voltage-pressure curves. In the orthogonally assembled NFGs, the pressure on a pixel of an NFS causes corresponding deformations of neighboring NFSs. The piezoelectric outputs vary with the distance from the pressing point, enabling us to position the pressing points and track the pressing trajectory in real time. Through judging piezoelectric outputs of all NFSs, precise locations of any pressed pixel with a resolution of 1 mm are presented vividly via luminous light-emitting diodes (LED), and the mapping profiles are displayed by pressing metal letters (S, W, J, T, and U) on multiple pixels. Furthermore, the coordinates of pressure either on an NFS or between NFSs with a resolution of 0.5 mm are reported digitally on a liquid crystal display (LCD). Thus, we developed novel self-powered tactile sensors with orthogonal NFGs to achieve real-time motion tracking, accurate spatial sensing, and location identification with high resolutions, which provide potential applications in electronic skin, robotics, and interface of artificial intelligence.
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Affiliation(s)
- Qingjie Liu
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P. R. China
| | - Long Jin
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P. R. China
| | - Peng Zhang
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P. R. China
| | - Binbin Zhang
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P. R. China
| | - Yingxin Li
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P. R. China
| | - Shuang Xie
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P. R. China
| | - Xiaohong Li
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P. R. China
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Carlos C, Wang Y, Wang J, Li J, Wang X. Thickness-Dependent Piezoelectric Property from Quasi-Two-Dimensional Zinc Oxide Nanosheets with Unit Cell Resolution. RESEARCH (WASHINGTON, D.C.) 2021; 2021:1519340. [PMID: 33728409 PMCID: PMC7936626 DOI: 10.34133/2021/1519340] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2020] [Accepted: 01/26/2021] [Indexed: 11/06/2022]
Abstract
A quantitative understanding of the nanoscale piezoelectric property will unlock many application potentials of the electromechanical coupling phenomenon under quantum confinement. In this work, we present an atomic force microscopy- (AFM-) based approach to the quantification of the nanometer-scale piezoelectric property from single-crystalline zinc oxide nanosheets (NSs) with thicknesses ranging from 1 to 4 nm. By identifying the appropriate driving potential, we minimized the influences from electrostatic interactions and tip-sample coupling, and extrapolated the thickness-dependent piezoelectric coefficient (d 33). By averaging the measured d 33 from NSs with the same number of unit cells in thickness, an intriguing tri-unit-cell relationship was observed. From NSs with 3n unit cell thickness (n = 1, 2, 3), a bulk-like d 33 at a value of ~9 pm/V was obtained, whereas NSs with other thickness showed a ~30% higher d 33 of ~12 pm/V. Quantification of d 33 as a function of ZnO unit cell numbers offers a new experimental discovery toward nanoscale piezoelectricity from nonlayered materials that are piezoelectric in bulk.
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Affiliation(s)
- Corey Carlos
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
| | - Yizhan Wang
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
| | - Jingyu Wang
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
| | - Jun Li
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
| | - Xudong Wang
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
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27
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Jang J, Jun YS, Seo H, Kim M, Park JU. Motion Detection Using Tactile Sensors Based on Pressure-Sensitive Transistor Arrays. SENSORS (BASEL, SWITZERLAND) 2020; 20:E3624. [PMID: 32605148 PMCID: PMC7374490 DOI: 10.3390/s20133624] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2020] [Revised: 06/20/2020] [Accepted: 06/23/2020] [Indexed: 01/17/2023]
Abstract
In recent years, to develop more spontaneous and instant interfaces between a system and users, technology has evolved toward designing efficient and simple gesture recognition (GR) techniques. As a tool for acquiring human motion, a tactile sensor system, which converts the human touch signal into a single datum and executes a command by translating a bundle of data into a text language or triggering a preset sequence as a haptic motion, has been developed. The tactile sensor aims to collect comprehensive data on various motions, from the touch of a fingertip to large body movements. The sensor devices have different characteristics that are important for target applications. Furthermore, devices can be fabricated using various principles, and include piezoelectric, capacitive, piezoresistive, and field-effect transistor types, depending on the parameters to be achieved. Here, we introduce tactile sensors consisting of field-effect transistors (FETs). GR requires a process involving the acquisition of a large amount of data in an array rather than a single sensor, suggesting the importance of fabricating a tactile sensor as an array. In this case, an FET-type pressure sensor can exploit the advantages of active-matrix sensor arrays that allow high-array uniformity, high spatial contrast, and facile integration with electrical circuitry. We envision that tactile sensors based on FETs will be beneficial for GR as well as future applications, and these sensors will provide substantial opportunities for next-generation motion sensing systems.
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Affiliation(s)
- Jiuk Jang
- Nano Science Technology Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea; (J.J.); (Y.S.J.); (H.S.); (M.K.)
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME), Advanced Science Institute, Yonsei University, Seoul 03722, Korea
| | - Yoon Sun Jun
- Nano Science Technology Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea; (J.J.); (Y.S.J.); (H.S.); (M.K.)
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME), Advanced Science Institute, Yonsei University, Seoul 03722, Korea
| | - Hunkyu Seo
- Nano Science Technology Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea; (J.J.); (Y.S.J.); (H.S.); (M.K.)
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME), Advanced Science Institute, Yonsei University, Seoul 03722, Korea
| | - Moohyun Kim
- Nano Science Technology Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea; (J.J.); (Y.S.J.); (H.S.); (M.K.)
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME), Advanced Science Institute, Yonsei University, Seoul 03722, Korea
| | - Jang-Ung Park
- Nano Science Technology Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea; (J.J.); (Y.S.J.); (H.S.); (M.K.)
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME), Advanced Science Institute, Yonsei University, Seoul 03722, Korea
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Ghasemian MB, Daeneke T, Shahrbabaki Z, Yang J, Kalantar-Zadeh K. Peculiar piezoelectricity of atomically thin planar structures. NANOSCALE 2020; 12:2875-2901. [PMID: 31984979 DOI: 10.1039/c9nr08063e] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The emergence of piezoelectricity in two-dimensional (2D) materials has represented a milestone towards employing low-dimensional structures for future technologies. 2D piezoelectric materials possess unique and unprecedented characteristics that cannot be found in other morphologies; therefore, the applications of piezoelectricity can be substantially extended. By reducing the thickness into the 2D realm, piezoelectricity might be induced in otherwise non-piezoelectric materials. The origin of the enhanced piezoelectricity in such thin planes is attributed to the loss of centrosymmetry, altered carrier concentration, and change in local polarization and can be efficiently tailored via surface modifications. Access to such materials is important from a fundamental research point of view, to observe the extraordinary interactions between free charge carriers, phonons and photons, and also with respect to device development, for which planar structures provide the required compatibility with the large-scale fabrication technologies of integrated circuits. The existence of piezoelectricity in 2D materials presents great opportunities for applications in various fields of electronics, optoelectronics, energy harvesting, sensors, actuators and biotechnology. Additionally, 2D flexible nanostructures with superior piezoelectric properties are distinctive candidates for integration into nano-scale electromechanical systems. Here we fundamentally review the state of the art of 2D piezoelectric materials from both experimental and theoretical aspects and report the recent achievements in the synthesis, characterization and applications of these materials.
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Affiliation(s)
- Mohammad B Ghasemian
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, NSW 2052, Australia.
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Recent progress in tactile sensors and their applications in intelligent systems. Sci Bull (Beijing) 2020; 65:70-88. [PMID: 36659072 DOI: 10.1016/j.scib.2019.10.021] [Citation(s) in RCA: 54] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2019] [Revised: 09/19/2019] [Accepted: 10/09/2019] [Indexed: 01/21/2023]
Abstract
With the rapid development of intelligent technology, tactile sensors as sensing devices constitute the core foundation of intelligent systems. Biological organs that can sense various stimuli play vital roles in the interaction between human beings and the external environment. Inspired by this fact, research on skin-like tactile sensors with multifunctionality and high performance has attracted extensive attention. An overview of the development of high-performance tactile sensors applied in intelligent systems is systematically presented. First, the development of tactile sensors endowed with stretchability, self-healing, biodegradability, high resolution and self-powered capability is discussed. Then, for intelligent systems, tactile sensors with excellent application prospects in many fields, such as wearable devices, medical treatment, artificial limbs and robotics, are presented. Finally, the future prospects of tactile sensors for intelligent systems are discussed.
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Dai H, Thostenson ET. Large-Area Carbon Nanotube-Based Flexible Composites for Ultra-Wide Range Pressure Sensing and Spatial Pressure Mapping. ACS APPLIED MATERIALS & INTERFACES 2019; 11:48370-48380. [PMID: 31769954 DOI: 10.1021/acsami.9b17100] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Flexible pressure sensors are of broad interest for applications including human-machine interfaces, wearable electronics, and object/motion detection. However, complexities associated with constituent materials, fabrication processes, sensing mechanisms, and hardwiring often hinder the large-scale applications of using high performance pressure sensors reported in the literature. Here we demonstrate a large-area, highly flexible, conformable, and mechanically robust pressure sensor using a silicone elastomer with an embedded nonwoven textile carrier coated with carbon nanotubes. The selected silicone polymer allows through-thickness deformability of the sensor while the high modulus textile carrier ensures in-plane stiffness and stability. The sensor has an initial electrical conductivity of 4.4 ± 0.38 S/m and is fabricated using a straightforward dip coating and polymer infusion process and can be easily scaled-up for large-scale applications. On the basis of its hierarchical composite structure, this piezoresistive pressure sensor possesses extremely high resilience under compression, a repeatable monotonic positive pressure correlation, and an ultrawide elastic working range (5.5 ± 0.5 MPa) that can be segmentally linearized. A true two-dimensional modality for spatial pressure mapping is realized by utilizing electrical impedance tomography (EIT) and demonstrated to yield conductivity maps that can estimate the location, shape, and amplitude of both localized and distributed pressure with simple contact areas.
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31
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Liu S, Wang L, Feng X, Liu J, Qin Y, Wang ZL. Piezotronic Tunneling Junction Gated by Mechanical Stimuli. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1905436. [PMID: 31643113 DOI: 10.1002/adma.201905436] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2019] [Revised: 10/07/2019] [Indexed: 06/10/2023]
Abstract
Tunneling junction is used in many devices such as high-frequency oscillators, nonvolatile memories, and magnetic field sensors. In these devices, modulation on the barrier width and/or height is usually realized by electric field or magnetic field. Here, a new piezotronic tunneling junction (PTJ) principle, in which the quantum tunneling is controlled/tuned by externally applied mechanical stimuli, is proposed. In these metal/insulator/piezoelectric semiconductor PTJs, such as Pt/Al2 O3 /p-GaN, the height and the width of the tunneling barriers can be mechanically modulated via the piezotronic effect. The tunneling current characteristics of PTJs exhibit critical behavior as a function of external mechanical stimuli, which results in high sensitivity (≈5.59 mV MPa-1 ), giant switching (>105 ), and fast response (≈4.38 ms). Moreover, the mechanical controlling of tunneling transport in PTJs with various thickness of Al2 O3 is systematically investigated. The high performance observed with these metal/insulator/piezoelectric semiconductor PTJs suggest their great potential in electromechanical technology. This study not only demonstrates dynamic mechanical controlling of quantum tunneling, but also paves a way for adaptive interaction between quantum tunneling and mechanical stimuli, with potential applications in the field of ultrasensitive press sensor, human-machine interface, and artificial intelligence.
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Affiliation(s)
- Shuhai Liu
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi, 710071, China
| | - Longfei Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Xiaolong Feng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Jinmei Liu
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi, 710071, China
| | - Yong Qin
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Lanzhou, Gansu, 730000, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
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32
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Qian W, Zhao K, Zhang D, Bowen CR, Wang Y, Yang Y. Piezoelectric Material-Polymer Composite Porous Foam for Efficient Dye Degradation via the Piezo-Catalytic Effect. ACS APPLIED MATERIALS & INTERFACES 2019; 11:27862-27869. [PMID: 31305978 DOI: 10.1021/acsami.9b07857] [Citation(s) in RCA: 53] [Impact Index Per Article: 10.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Piezoelectric nanomaterials have been utilized to realize effective charge separation for degrading organic pollutants in water under the action of mechanical vibrations. However, in particulate form, the nanostructured piezoelectric catalysts can flow into the aqueous pollutant and limit its recyclability and reuse. Here, we report a new method of using a barium titanate (BaTiO3, BTO)-polydimethylsiloxane composite porous foam catalyst to address the challenge of secondary pollution and reusable limits. Piezo-catalytic dye degradation activity of the porous foam can degrade a Rhodamine B (RhB) dye solution by ∼94%, and the composite material exhibits excellent stability after repeated decomposition of 12 cycles. It is suggested that under ultrasonic vibrations, the piezoelectric BTO materials create separated electron-hole pairs that react with hydroxyl ions and oxygen molecules to generate superoxide (•O2-) and hydroxyl (•OH) radicals for organic dye degradation. The degradation efficiency of RhB is associated with the piezoelectric constant, the specific surface area, and the shape of the material.
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Affiliation(s)
- Weiqi Qian
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Kun Zhao
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Ding Zhang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Chris R Bowen
- Department of Mechanical Engineering , University of Bath , Bath BA2 7AK , U.K
| | - Yuanhao Wang
- Xinjiang Technical Institute of Physics & Chemistry , Chinese Academy of Sciences , Urumqi , Xinjiang 830011 , P. R. China
| | - Ya Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
- Center on Nanoenergy Research, School of Physical Science and Technology , Guangxi University , Nanning 530004 , P. R. China
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33
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Pan C, Zhai J, Wang ZL. Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires. Chem Rev 2019; 119:9303-9359. [PMID: 31364835 DOI: 10.1021/acs.chemrev.8b00599] [Citation(s) in RCA: 68] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.
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Affiliation(s)
- Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China.,School of Material Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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34
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Chen W, Roca I Cabarrocas P. Rational design of nanowire solar cells: from single nanowire to nanowire arrays. NANOTECHNOLOGY 2019; 30:194002. [PMID: 30654343 DOI: 10.1088/1361-6528/aaff8d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In this review, we report several rational designs of nanowire-based solar cells from single nanowire to nanowire arrays. Two methods of nanowires fabrication: via 'top-down' and 'bottom-up', and two types of configurations including axial and radial junction are presented for nanowire-based solar cells. To enhance absorption, several photon management schemes are shown in detail, including anti-reflection coating, diffractive grating, and plasmonics. Considering the rational design of nanowire arrays, we summarize a total of seven solar cell structures including axial junctions, radial junctions, substrate interfacial junctions, planar junctions, conductors, junctionless and tandem. Each type is supported by examples which are presented and discussed. Finally, a general comparison between bulk and nanowire solar cell efficiencies is given.
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Affiliation(s)
- Wanghua Chen
- Faculty of Science, Ningbo University, 315211 Ningbo, People's Republic of China. LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, F-91128 Palaiseau, France. IPVF, Institut Photovoltaïque d'Île-de-France, F-91120 Palaiseau, France
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35
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Hu W, Zhang C, Wang ZL. Recent progress in piezotronics and tribotronics. NANOTECHNOLOGY 2019; 30:042001. [PMID: 30499452 DOI: 10.1088/1361-6528/aaeddd] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
As the electronic technology is approaching its limits of materials and processing, a smart interaction between functional device and environment is a promising way for future electronic technology above the Moore's law. The mechanical signal triggering is the most common and natural way for the smart interactions, which has realized direct interaction between human/ambient and electronics and artificial intelligence. In 2006, the piezotronic effect, as a novel effect, was first proposed by Wang to achieve the effective, adaptive and seamless interactions between electronic devices and the external stress, which utilizes the piezoelectric polarization potential as the virtual gate to tune/control the carriers' transportation in the electronic device. Since then, this new effect has been widely observed in many low-dimensional semiconductors such as ZnO, GaN, CdS nanowires, and 2D MoS2. In extension, tribotronics was first proposed in 2014 by Wang, which is about the devices manufactured using the electrostatic potential created by triboelectrification as a 'gate' voltage to tune/control energy transformation and electrical transport in semiconductors for the smart interaction between device and environment. Tribotronics has made rapid research progress and many tribotronic functional devices have been studied with a variety of materials, such as tribotronic tactile switch, memory, hydrogen sensor and phototransistor. This review highlights advances in piezotronics and tribotronics with focus on fundamental theories, nanoscale materials, functional devices and simulations. Our emphasis is mainly about their application for third-generation semiconductor. The concepts and results presented in this review show that the piezotronics and tribotronics will facilitate the development of MEMS/NEMS, self-powered sensing, man-computer interfacing, and active wearable electronics.
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Affiliation(s)
- Weiguo Hu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, People's Republic of China. School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China. Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, People's Republic of China
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36
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Liu S, Wang L, Wang Z, Cai Y, Feng X, Qin Y, Wang ZL. Double-Channel Piezotronic Transistors for Highly Sensitive Pressure Sensing. ACS NANO 2018; 12:1732-1738. [PMID: 29328625 DOI: 10.1021/acsnano.7b08447] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Piezotronic transistors (PTs) that utilize inner crystal potential generated by interface piezoelectric polarization charges as the gate voltage have great potential applications in force/pressure-triggered or controlled electronic devices, sensors, human-machine communication, and microelectromechanical systems. Although the performance of PTs has been partially enhanced by exploring special materials with different geometries or high piezoelectricity, few studies have been focused on the structure design of PT itself to more effectively enhance the performance and structural reliability. Here, an integrated double-channel plane piezotronic transistor is invented as a high-performance pressure-sensing technology. Owing to the double-channel modulation and the plane structure, the PT has the merits of high pressure sensitivity (84.2-104.4 meV/MPa) and high structural reliability, which provides the opportunity for great applications, such as human-computer interfacing, biosensing, and health monitoring.
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Affiliation(s)
- Shuhai Liu
- School of Advanced Materials and Nanotechnology, Xidian University , Shaanxi 710071, China
| | - Longfei Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- College of Nanoscience and Technology, University of Chinese Academy of Sciences , Beijing 100049, China
| | - Zheng Wang
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University , Gansu 730000, China
| | - Yafeng Cai
- Key Laboratory for Advanced Materials and Research Institute of Industrial Catalysis, East China University of Science and Technology , Shanghai 200237, China
| | - Xiaolong Feng
- Microsystems and Terahertz Research Center, China Academy of Engineering Physics , Chengdu, Sichuan 610200, China
| | - Yong Qin
- School of Advanced Materials and Nanotechnology, Xidian University , Shaanxi 710071, China
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University , Gansu 730000, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- College of Nanoscience and Technology, University of Chinese Academy of Sciences , Beijing 100049, China
- School of Material Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
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37
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Xiong J, Li W, Gan Y, Wei Y, Cheng G, Dou S, Li Z. Extremely rapid engineering of zinc oxide nanoaggregates with structure-dependent catalytic capability towards removal of ciprofloxacin antibiotic. Inorg Chem Front 2018. [DOI: 10.1039/c8qi00435h] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
ZnO nanoaggregates with structure-dependent catalytic capability of removal of ciprofloxacin antibiotics were engineered by an extremely rapid polyol-mediated synthesis approach.
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Affiliation(s)
- Jinyan Xiong
- College of Chemistry and Chemical Engineering
- Hubei Key Laboratory of Biomass Fibers and Eco-dyeing & Finishing
- Wuhan Textile University
- Wuhan 430073
- China
| | - Wei Li
- College of Chemistry and Chemical Engineering
- Hubei Key Laboratory of Biomass Fibers and Eco-dyeing & Finishing
- Wuhan Textile University
- Wuhan 430073
- China
| | - Yixin Gan
- School of Chemistry and Environmental Engineering
- Wuhan Institute of Technology
- Wuhan 430073
- PR China
| | - Yi Wei
- School of Chemistry and Environmental Engineering
- Wuhan Institute of Technology
- Wuhan 430073
- PR China
| | - Gang Cheng
- School of Chemistry and Environmental Engineering
- Wuhan Institute of Technology
- Wuhan 430073
- PR China
| | - Shixue Dou
- Institute for Superconducting & Electronic Materials
- The University of Wollongong
- Australia
| | - Zhen Li
- Institute for Superconducting & Electronic Materials
- The University of Wollongong
- Australia
- State Key Laboratory of Radiation Medicine and Protection
- School of Radiation Medicine and Radiation Protection
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38
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D. Prasad M, Sangani LDV, Batabyal SK, Krishna MG. Single and twinned plates of 2D layered BiI3 for use as nanoscale pressure sensors. CrystEngComm 2018. [DOI: 10.1039/c8ce00823j] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Single and twinned plates of 2D layered BiI3 have been found to be piezoelectric and can be used as a nanoscale pressure sensor.
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Affiliation(s)
- Muvva D. Prasad
- Amrita Centre for Industrial Research & Innovation (ACIRI)
- Amrita School of Engineering
- Amrita Vishwa Vidyapeetham
- Coimbatore
- India
| | - L. D. Varma Sangani
- Centre for Advanced Studies in Electronics Science and Technology
- School of Physics
- University of Hyderabad
- Hyderabad 500046
- India
| | - Sudip K. Batabyal
- Amrita Centre for Industrial Research & Innovation (ACIRI)
- Amrita School of Engineering
- Amrita Vishwa Vidyapeetham
- Coimbatore
- India
| | - M. Ghanashyam Krishna
- Centre for Advanced Studies in Electronics Science and Technology
- School of Physics
- University of Hyderabad
- Hyderabad 500046
- India
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Faraji N, Adelung R, Mishra YK, Seidel J. Nanoscale electromechanical and electronic properties of free-standing ZnO nano- and microstructured platelets. NANOTECHNOLOGY 2017; 28:405701. [PMID: 28832338 DOI: 10.1088/1361-6528/aa87f8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The piezoelectric response, conductivity and surface potential of individual grains and grain boundaries in free-standing polycrystalline ZnO nano- and microstructured platelets is studied using scanning probe based techniques on the nanoscale. We find that applied dc electric fields can alter the piezoresponse in individual grains, as well as the local nanoscale conductivity, and invert the relative surface potential at grain boundaries. This can be attributed to defect accumulation at the grain surfaces and at grain boundaries and the associated density of carriers. Together with recently observed below-bandgap photoconductivity at grain boundaries, the presented observation opens new venues for potential nanoelectronic applications that rely on grain and grain boundary engineering and functionality in a wide-bandgap transparent material.
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Affiliation(s)
- N Faraji
- School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW 2052, Australia
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Wang L, Liu S, Feng X, Xu Q, Bai S, Zhu L, Chen L, Qin Y, Wang ZL. Ultrasensitive Vertical Piezotronic Transistor Based on ZnO Twin Nanoplatelet. ACS NANO 2017; 11:4859-4865. [PMID: 28410558 DOI: 10.1021/acsnano.7b01374] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
High sensitivity of pressure/strain sensors is the key to accurately evaluating external mechanical stimuli and could become more important in future generations of human-machine interfaces and artificial skin. Here we report the study of a two-terminal piezotronic transistor based on ZnO twin nanoplatelets (TNPT). Owing to the mirror symmetrical structure of ZnO twin nanplatelet, compressive pressure-induced positive piezoelectric polarization charges created at both metal-semiconductor interfaces can simultaneously lower both Schottky barrier heights and thus significantly modulate the carrier transport. Our device exhibits the highest pressure sensitivity of 1448.08-1677.53 meV/MPa, which is more than ∼20 times larger than the highest value reported previously, and a fast response time of <5 ms. In addition, it can be used as a photodector with an ultrahigh external photoresponsivity of ∼1.45 × 104 AW-1, which is ∼105 times larger in magnitude than that of commercial UV photodetectors. The coupling between the mirror symmetrical structure and strong piezotronic effect in ZnO twin nanoplatelets may enable the development of ultrasensitive pressure/strain sensors for various applications such as artificial skin, health monitoring, and adaptive biomedical probes.
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Affiliation(s)
- Longfei Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST) , Beijing 100083, China
| | - Shuhai Liu
- School of Advanced Materials and Nanotechnology, Xidian University , Xi'an 710071, China
| | - Xiaolong Feng
- Microsystems and Terahertz Research Center, China Academy of Engineering Physics , Chengdu, Sichuan 610200, China
| | - Qi Xu
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University , Gansu 730000, China
| | - Suo Bai
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University , Gansu 730000, China
| | - Laipan Zhu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST) , Beijing 100083, China
| | - Libo Chen
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST) , Beijing 100083, China
| | - Yong Qin
- School of Advanced Materials and Nanotechnology, Xidian University , Xi'an 710071, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST) , Beijing 100083, China
- School of Material Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
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Wang Z, Gan L, He H, Ye Z. Free-Standing Atomically Thin ZnO Layers via Oxidation of Zinc Chalcogenide Nanosheets. ACS APPLIED MATERIALS & INTERFACES 2017; 9:13537-13543. [PMID: 28358478 DOI: 10.1021/acsami.7b02425] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Monolayer ZnO represents a class of new two-dimensional (2D) materials that are expected to exhibit unique optoelectronic properties and applications. Here we report a novel strategy to synthesize free-standing atomically thin ZnO layers via the oxidation of hydrothermally grown ultrathin zinc chalcogenide nanosheets. With micrometer-scaled lateral size, the obtained ultrathin ZnO layer has a thickness of ∼2 nm, and the layered structure still maintained well after high temperature oxidation. The thermal treatment strongly improves the crystal quality as well without inducing cracks or pinholes in the ultrathin layers. The atomically thin ZnO layers are highly luminescent with dominant green emission. High quality white light is obtained from the mixed phosphors containing the ZnO layers, exhibiting their potential as compelling ultraviolet-excited phosphors.
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Affiliation(s)
- Zheng Wang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, P. R. China
| | - Lu Gan
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, P. R. China
| | - Haiping He
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, P. R. China
| | - Zhizhen Ye
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, P. R. China
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