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Yang AJ, Wang SX, Xu J, Loh XJ, Zhu Q, Wang XR. Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices. ACS NANO 2023. [PMID: 37171107 DOI: 10.1021/acsnano.3c00429] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, and packing density as well as functionalities. Heterogeneous integration, where dissimilar layers of materials and functionalities are unrestrictedly stacked at an atomic scale, is appealing for next-generation electronics, such as multifunctional, neuromorphic, spintronic, and ultralow-power devices, because it unlocks technologically useful interfaces of distinct functionalities. Recently, the combination of functional perovskite oxides and two-dimensional layered materials (2DLMs) led to unexpected functionalities and enhanced device performance. In this paper, we review the recent progress of the heterogeneous integration of perovskite oxides and 2DLMs from the perspectives of fabrication and interfacial properties, electronic applications, and challenges as well as outlooks. In particular, we focus on three types of attractive applications, namely field-effect transistors, memory, and neuromorphic electronics. The van der Waals integration approach is extendible to other oxides and 2DLMs, leading to almost unlimited combinations of oxides and 2DLMs and contributing to future high-performance electronic and spintronic devices.
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Affiliation(s)
- Allen Jian Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Su-Xi Wang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Jianwei Xu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Xian Jun Loh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Qiang Zhu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
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2
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Chau TK, Suh D, Kang H. Quantum Hall Effect across Graphene Grain Boundary. MATERIALS (BASEL, SWITZERLAND) 2021; 15:8. [PMID: 35009154 PMCID: PMC8745786 DOI: 10.3390/ma15010008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 12/17/2021] [Accepted: 12/18/2021] [Indexed: 06/14/2023]
Abstract
Charge carrier scattering at grain boundaries (GBs) in a chemical vapor deposition (CVD) graphene reduces the carrier mobility and degrades the performance of the graphene device, which is expected to affect the quantum Hall effect (QHE). This study investigated the influence of individual GBs on the QH state at different stitching angles of the GB in a monolayer CVD graphene. The measured voltage probes of the equipotential line in the QH state showed that the longitudinal resistance (Rxx) was affected by the scattering of the GB only in the low carrier concentration region, and the standard QHE of a monolayer graphene was observed regardless of the stitching angle of the GB. In addition, a controlled device with an added metal bar placed in the middle of the Hall bar configuration was introduced. Despite the fact that the equipotential lines in the controlled device were broken by the additional metal bar, only the Rxx was affected by nonzero resistance, whereas the Hall resistance (Rxy) revealed the well-quantized plateaus in the QH state. Thus, our study clarifies the effect of individual GBs on the QH states of graphenes.
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Affiliation(s)
- Tuan Khanh Chau
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea;
| | - Dongseok Suh
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea;
| | - Haeyong Kang
- Department of Physics, Pusan National University, Busan 46241, Korea
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Liu X, Zhou X, Pan Y, Yang J, Xiang H, Yuan Y, Liu S, Luo H, Zhang D, Sun J. Charge-Ferroelectric Transition in Ultrathin Na 0.5 Bi 4.5 Ti 4 O 15 Flakes Probed via a Dual-Gated Full van der Waals Transistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2004813. [PMID: 33145852 DOI: 10.1002/adma.202004813] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Revised: 09/28/2020] [Indexed: 06/11/2023]
Abstract
Ferroelectric field-effect transistors (FeFETs) have recently attracted enormous attention owing to their applications in nonvolatile memories and low-power logic electronics. However, the current mainstream thin-film-based ferroelectrics lack good compatibility with the emergent 2D van der Waals (vdW) heterostructures. In this work, the synthesis of thin ferroelectric Na0.5 Bi4.5 Ti4 O15 (NBIT) flakes by a molten-salt method is reported. With a dry-transferred NBIT flake serving as the top-gate dielectric, dual-gate molybdenum disulfide (MoS2 ) FeFETs are fabricated in a full vdW stacking structure. Barrier-free graphene contacts allow the investigation of intrinsic carrier transport of MoS2 governed by lattice scattering. Thanks to the high dielectric constant of ≈94 in NBIT, a metal to insulator transition with a high electron concentration of 3.0 × 1013 cm-2 is achieved in MoS2 under top-gate modulation. The electron field-effect mobility as high as 182 cm2 V-1 s-1 at 88 K is obtained. The as-fabricated MoS2 FeFET exhibits clockwise hysteresis transfer curves that originate from charge trapping/release with either top-gate or back-gate modulation. Interestingly, hysteresis behavior can be controlled from clockwise to counterclockwise using dual-gate. A multifunctional device utilizing this unique property of NBIT, which is switchable electrostatically between short-term memory and nonvolatile ferroelectric memory, is envisaged.
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Affiliation(s)
- Xiaochi Liu
- School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, 410083, China
| | - Xuefan Zhou
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Yuchuan Pan
- School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, 410083, China
| | - Junqiang Yang
- School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, 410083, China
| | - Haiyan Xiang
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemical/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yahua Yuan
- School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, 410083, China
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemical/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Hang Luo
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Dou Zhang
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Jian Sun
- School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, 410083, China
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4
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Chen S, Chen X, Duijnstee EA, Sanyal B, Banerjee T. Unveiling Temperature-Induced Structural Domains and Movement of Oxygen Vacancies in SrTiO 3 with Graphene. ACS APPLIED MATERIALS & INTERFACES 2020; 12:52915-52921. [PMID: 33175485 PMCID: PMC7705893 DOI: 10.1021/acsami.0c15458] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/27/2020] [Accepted: 11/03/2020] [Indexed: 06/11/2023]
Abstract
Heterointerfaces coupling complex oxides exhibit coexisting functional properties such as magnetism, superconductivity, and ferroelectricity, often absent in their individual constituent. SrTiO3 (STO), a canonical band insulator, is an active constituent of such heterointerfaces. Temperature-, strain-, or mechanical stress-induced ferroelastic transition leads to the formation of narrow domains and domain walls in STO. Such ferroelastic domain walls have been studied using imaging or transport techniques and, often, the findings are influenced by the choice and interaction of the electrodes with STO. In this work, we use graphene as a unique platform to unveil the movement of oxygen vacancies and ferroelastic domain walls near the STO surface by studying the temperature and gate bias dependence of charge transport in graphene. By sweeping the back gate voltage, we observe antihysteresis in graphene typically observed in conventional ferroelectric oxides. Interestingly, we find features in antihysteresis that are related to the movement of domain walls and of oxygen vacancies in STO. We ascertain this by analyzing the time dependence of the graphene square resistance at different temperatures and gate bias. Density functional calculations estimate the surface polarization and formation energies of layer-dependent oxygen vacancies in STO. This corroborates quantitatively with the activation energies determined from the temperature dependence of the graphene square resistance. Introduction of a hexagonal boron nitride (hBN) layer, of varying thicknesses, between graphene and STO leads to a gradual disappearance of the observed features, implying the influence of the domain walls onto the potential landscape in graphene.
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Affiliation(s)
- Si Chen
- Zernike
Institute for Advanced Materials, University
of Groningen, 9747 AG Groningen, The Netherlands
| | - Xin Chen
- Department
of Physics and Astronomy, Uppsala University, P.O. Box 516, 751 20 Uppsala, Sweden
| | - Elisabeth A. Duijnstee
- Zernike
Institute for Advanced Materials, University
of Groningen, 9747 AG Groningen, The Netherlands
| | - Biplab Sanyal
- Department
of Physics and Astronomy, Uppsala University, P.O. Box 516, 751 20 Uppsala, Sweden
| | - Tamalika Banerjee
- Zernike
Institute for Advanced Materials, University
of Groningen, 9747 AG Groningen, The Netherlands
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5
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Ding J, Cheng J, Dogan F, Li Y, Lin W, Yao Y, Manchon A, Yang K, Wu T. Two-Dimensional Electron Gas at the Spinel/Perovskite Interface: Suppression of Polar Catastrophe by an Ultrathin Layer of Interfacial Defects. ACS APPLIED MATERIALS & INTERFACES 2020; 12:42982-42991. [PMID: 32829635 DOI: 10.1021/acsami.0c13337] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional electron gas (2DEG) at the interface between two insulating perovskite oxides has attracted much interest for both fundamental physics and potential applications. Here, we report the discovery of a new 2DEG formed at the interface between spinel MgAl2O4 and perovskite SrTiO3. Transport measurements, electron microscopy imaging, and first-principles calculations reveal that the interfacial 2DEG is closely related to the symmetry breaking at the MgAl2O4/SrTiO3 interface. The critical film thickness for the insulator-to-metal transition is approximately 32 Å, which is twice as thick as that reported on the widely studied LaAlO3/SrTiO3 system. Scanning transmission electron microscopy imaging indicates the formation of interfacial Ti-Al antisite defects with a thickness of ∼4 Å. First-principles density functional theory calculations indicate that the coexistence of the antisite defects and surface oxygen vacancies may explain the formation of interfacial 2DEG as well as the observed critical film thickness. The discovery of 2DEG at the spinel/perovskite interface introduces a new material platform for designing oxide interfaces with desired characteristics.
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Affiliation(s)
- Junfeng Ding
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - Jianli Cheng
- Department of NanoEngineering, University of California, San Diego, La Jolla, California 92093-0448, United States
| | - Fatih Dogan
- College of Engineering and Technology, American University of the Middle East, Kuwait
| | - Yangyang Li
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Yingbang Yao
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
| | - Aurelien Manchon
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- Aix-Marseille Univ, CNRS, CINaM, Marseille 13288, France
| | - Kesong Yang
- Department of NanoEngineering, University of California, San Diego, La Jolla, California 92093-0448, United States
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
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6
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Apostol NG, Lizzit D, Lungu GA, Lacovig P, Chirilă CF, Pintilie L, Lizzit S, Teodorescu CM. Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum. RSC Adv 2020; 10:1522-1534. [PMID: 35494695 PMCID: PMC9047335 DOI: 10.1039/c9ra09131a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2019] [Accepted: 12/31/2019] [Indexed: 12/29/2022] Open
Abstract
Graphene-like layers synthesized in ultrahigh vacuum, characterized by surface science techniques, exhibit resistance hysteresis depending on the carbon coverage.
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7
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Kang KT, Park J, Suh D, Choi WS. Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803732. [PMID: 30589101 DOI: 10.1002/adma.201803732] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2018] [Revised: 09/18/2018] [Indexed: 05/28/2023]
Abstract
The marriage between a 2D layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that cannot be achieved in either material alone. Interesting recent discoveries in systems such as graphene/SrTiO3 , graphene/LaAlO3 /SrTiO3 , graphene/ferroelectric oxide, MoS2 /SrTiO3 , and FeSe/SrTiO3 heterostructures include voltage scaling in field-effect transistors, charge state coupling across an interface, quantum conductance probing of the electrochemical activity, novel memory functions based on charge traps, and greatly enhanced superconductivity. In this context, various properties and functionalities appearing in numerous different 2DLM/TMO heterostructure systems are reviewed. The results imply that the multidimensional heterostructure approach based on the disparate material systems leads to an entirely new platform for the study of condensed matter physics and materials science. The heterostructures are also highly relevant technologically as each constituent material is a promising candidate for next-generation optoelectronic devices.
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Affiliation(s)
- Kyeong Tae Kang
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Korea
| | - Jeongmin Park
- Department of Energy Sciences, Sungkyunkwan University, Suwon, 16419, Korea
| | - Dongseok Suh
- Department of Energy Sciences, Sungkyunkwan University, Suwon, 16419, Korea
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Korea
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8
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Chen X, Zeng K, Zhu X, Ding G, Zou T, Zhang C, Zhou K, Zhou Y, Han S. Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1900213. [PMID: 31179227 PMCID: PMC6548956 DOI: 10.1002/advs.201900213] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2019] [Revised: 02/26/2019] [Indexed: 05/30/2023]
Abstract
Depending on the mobile species involved in the resistive switching process, redox random access memories and conductive bridge random access memories are widely studied with distinct switching mechanisms. Although the two resistance switching types have faithfully proved to be electrochemically linked in metal oxide-based memristive devices, the corresponding photo-induced transition has not yet been realized. Here, a photo-induced transition through the integration of a graphene layer into a titanium oxide-based memory device is demonstrated. Coupled with Raman mapping and an electron energy loss spectroscopy technique, the photo-induced interaction at the heterostructure of graphene/titanium oxide are considered to dominate the transition process. Moreover, a negative differential resistance effect is observed by controlling the applied voltage, which can be credited to the saturation of trap centers (oxygen vacancies) and the increase of interfacial barrier at the graphene/titanium oxide heterojunction.
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Affiliation(s)
- Xiaoli Chen
- Shenzhen Key Laboratory of Flexible Memory Materials and DevicesCollege of Electronic Science and TechnologyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Kelin Zeng
- Institute for Advanced StudyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Xin Zhu
- Institute for Advanced StudyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Guanglong Ding
- Shenzhen Key Laboratory of Flexible Memory Materials and DevicesCollege of Electronic Science and TechnologyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Ting Zou
- College of Chemistry and Environmental EngineeringShenzhen UniversityShenzhenGuangdong518071P. R. China
| | - Chen Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and DevicesCollege of Electronic Science and TechnologyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Kui Zhou
- Shenzhen Key Laboratory of Flexible Memory Materials and DevicesCollege of Electronic Science and TechnologyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Ye Zhou
- Institute for Advanced StudyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Su‐Ting Han
- Shenzhen Key Laboratory of Flexible Memory Materials and DevicesCollege of Electronic Science and TechnologyShenzhen UniversityShenzhenGuangdong518060P. R. China
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9
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Ji H, Wang YG, Li Y. Charge screening-controlled Verwey phase transition in Fe 3O 4/SrTiO 3 heterostructure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:11LT01. [PMID: 29465039 DOI: 10.1088/1361-648x/aaae37] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Despite intensive investigations into the Verwey phase transition of Fe3O4 over half a century, the mechanism of this phase transition remains controversial and needs further research. In this work, we build the Fe3O4/SrTiO3 multiferroic heterostructure and investigate the temperature dependence of its saturation magnetization under various electric fields. It is found that the charge-screening effect not only influences the magnetization but also induces the temperature of the Verwey phase transition shifting ~13 K. It suggests that the Verwey phase transition has certain correlations with the electron distribution and the change of the number of minority spin electrons in the trimerons plays a dominant role in the temperature shift of the phase transition.
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Affiliation(s)
- H Ji
- College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
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