Organic High Electron Mobility Transistors Realized by 2D Electron Gas

Going ballistic: a novel characterization for the electronic energy gap

The energy gap of molecular semiconductors is a critical parameter in molecule-based devices because it fundamentally determines the operating principle and device performance, such as the charge transfer driving force. Hence, an accurate quantification of the energy gap of a molecular semiconductor is essential. The hot electron technique, which is implemented using a hot electron transistor and ballistic electron emission microscope, has been verified as the most powerful characterization in recent years. By monitoring the charge transport on the metal/molecule interface, an electron-injection barrier (or LUMO) and hole-injection barrier (or HOMO) can be achieved, which contributes to the electronic energy gap determination. In this review, a comprehensive comparison of these two techniques was made. It helps us to select a suitable method in specific situations and provides a profound comprehension of the charge transport process in molecular semiconductor and molecule-based devices.

Transport of charge carriers and optoelectronic applications of highly ordered metal phthalocyanine heterojunction thin films

Organic semiconductor thin films based on polycrystalline small molecules exhibit many attractive properties that have already led to their applications in optoelectronic devices, which can be produced by less expensive and stringent processes. Conduction of electric charges typically occurs in polycrystalline organic thin films. Unavoidably, the crystalline domain size, orientation, domain boundaries and energy level of the interface affect the transport of the charge carriers in organic thin films. In this comprehensive perspective, we focus on highly ordered organic heterojunction thin films fabricated by the weak epitaxy growth method. Transport of charge carriers in these highly ordered organic heterojunction thin films was systematically studied with various characterization techniques. Recent advances are presented in high-performance optoelectronic applications based on highly ordered organic heterojunction thin films, including organic photodetectors, photovoltaic cells, photomemory devices and artificial optoelectronic synapses.

Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization

An organic-inorganic hybrid superlattice with near perfect synergistic integration of organic and inorganic constituents was developed to produce properties vastly superior to those of either moiety alone. The complementary hybrid superlattice is composed of multiple quantum wells of 4-mercaptophenol organic monolayers and amorphous ZnO nanolayers. Within the superlattice, multichannel formation was demonstrated at the organic-inorganic interfaces to produce an excellent-performance field effect transistor exhibiting outstanding field-effect mobility with band-like transport and steep subthreshold swing. Furthermore, mutual stabilizations between organic monolayers and ZnO effectively reduced the performance degradation notorious in exclusively organic and ZnO transistors.

Molecular Layer-Defined Transition of Carrier Distribution and Correlation with Transport in Organic Crystalline Semiconductors

Despite the great efforts to unveil the charge carrier behavior at the semiconductor/dielectric interface of organic field-effect transistors, an examination of the interfacial carrier distribution and the correlation with the charge transport in molecular crystalline semiconductors remains fundamental for understanding the nature of the microscopic carrier motion. Hence, an effective approach to accurately tune the carrier distribution with molecular-layer precision is essential. Here, we find that the carrier accumulation is strictly modulated in highly ordered, few-layer molecular crystalline semiconducting films by tuning the polaronic coupling between the charge carriers and dielectric. The admittance method reveals that the carriers distribute only within a monolayer with stronger localization on a high-κ dielectric and extend to a second layer with better delocalization on a low-κ dielectric. Furthermore, a unique dimensional transition in the charge transport at the dielectric interface is evidenced under a transistor architecture by temperature-dependent measurements. The presented microscopic nature of charge carriers with layer-defined precision in molecular crystalline films should provide an unprecedented opportunity in organic electronics in terms of interface engineering, quantum transport, and device physics.

Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors

High-performance solution-processed metal oxide (MO) thin-film transistors (TFTs) are realized by fabricating a homojunction of indium oxide (In₂ O₃ ) and polyethylenimine (PEI)-doped In₂ O₃ (In₂ O₃ :x% PEI, x = 0.5-4.0 wt%) as the channel layer. A two-dimensional electron gas (2DEG) is thereby achieved by creating a band offset between the In₂ O₃ and PEI-In₂ O₃ via work function tuning of the In₂ O₃ :x% PEI, from 4.00 to 3.62 eV as the PEI content is increased from 0.0 (pristine In₂ O₃ ) to 4.0 wt%, respectively. The resulting devices achieve electron mobilities greater than 10 cm² V^-1 s^-1 on a 300 nm SiO₂ gate dielectric. Importantly, these metrics exceed those of the devices composed of the pristine In₂ O₃ materials, which achieve a maximum mobility of ≈4 cm² V^-1 s^-1 . Furthermore, a mobility as high as 30 cm² V^-1 s^-1 is achieved on a high-k ZrO₂ dielectric in the homojunction devices. This is the first demonstration of 2DEG-based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material.