A New Passivation Route Leading to Over 8% Efficient PbSe Quantum-Dot Solar Cells via Direct Ion Exchange with Perovskite Nanocrystals

ZnO/SrTiO3, ZnO/WO3, and ZnO/Zn2SnO4 Bilayer as Electron Transport Layers for Lead Sulfide Colloidal Quantum Dots Solar Cells

In order to enhance the overall efficiency of colloidal quantum dots solar cells, it is crucial to suppress the recombination of charge carriers and minimize energy loss at the interfaces between the transparent electrode, electron transport layer (ETL), and colloidal quantum dots (CQDs) light-absorbing material. In the current study, ZnO/SrTiO3 (STO), ZnO/WO3 (TO), and ZnO/Zn2SnO4 (ZTO) bilayers are introduced as an ETL using a spin-coating technique. The ZTO interlayer exhibits a smoother surface with a root-mean-square (RMS) value of ≈ 3.28 nm compared to STO and TO interlayers, which enables it to cover the surface of the ITO/ZnO substrate entirely and helps to prevent direct contact between the CQDs absorber layer and the ITO/ZnO substrate, thereby effectively preventing efficient charge recombination at the interfaces of the ETL/CQDs. Furthermore, the ZTO interlayer possesses superior electron mobility, a higher visible light transmission, and a suitable energy band structure compared to STO and TO. These characteristics are advantageous for extracting charge carriers and facilitating electron transport. The PbS CQDs solar cell based on the ITO/ZnO/ZTO/PbS-FABr/PbS-EDT/NiO/Au device configuration exhibits the highest efficiency of 15.28%, which is significantly superior than the ITO/ZnO/PbS-FABr/PbS-EDT/NiO/Au solar cell device (PCE = 14.38%). This study is anticipated to offer a practical approach to develop ultrathin and compact ETL for highly efficient CQDSCs.

Facile Ligand Exchange of Ionic Ligand-Capped Amphiphilic Ag2S Nanocrystals for High Conductive Thin Films

A surface ligand modification of colloidal nanocrystals (NCs) is one of the crucial issues for their practical applications because of the highly insulating nature of native long-chain ligands. Herein, we present straightforward methods for phase transfer and ligand exchange of amphiphilic Ag2S NCs and the fabrication of highly conductive films. S-terminated Ag2S (S-Ag2S) NCs are capped with ionic octylammonium (OctAH+) ligands to compensate for surface anionic charge, S2-, of the NC core. An injection of polar solvent, formamide (FA), into S-Ag2S NCs dispersed in toluene leads to an additional envelopment of the charged S-Ag2S NC core by FA due to electrostatic stabilization, which allows its amphiphilic nature and results in a rapid and effective phase transfer without any ligand addition. Because the solvation by FA involves a dissociation equilibrium of the ionic OctAH+ ligands, controlling a concentration of OctAH+ enables this phase transfer to show reversibility. This underlying chemistry allows S-Ag2S NCs in FA to exhibit a complete ligand exchange to Na+ ligands. The S-Ag2S NCs with Na+ ligands show a close interparticle distance and compatibility for uniformly deposited thin films by a simple spin-coating method. In photoelectrochemical measurements with stacked Ag2S NCs on ITO electrodes, a 3-fold enhanced current response was observed for the ligand passivation of Na+ compared to OctAH+, indicating a significantly enhanced charge transport in the Ag2S NC film by a drastically reduced interparticle distance due to the Na+ ligands.

Cation-Exchange Enables In Situ Preparation of PbSe Quantum Dot Ink for High Performance Solar Cells

Lead selenide (PbSe) colloidal quantum dots (CQDs) are promising candidates for optoelectronic applications. To date, PbSe CQDs capped by halide ligands exhibit improved stability and solar cells using these CQDs as active layers have reported a remarkable power conversion efficiency (PCE) up to 10%. However, PbSe CQDs are more prone to oxidation, requiring delicate control over their processability and compromising their applications. Herein, an efficient strategy that addresses this issue by an in situ cation-exchange process is reported. This is achieved by a two-phase ligand exchange process where PbI₂ serves as both a passivating ligand and cation-source inducing transformation of CdSe to PbSe. The defect density and carrier lifetime of PbSe CQD films are improved to 1.05 × 10¹⁶  cm^-3 and 12.2 ns, whereas the traditional PbSe CQD films possess 1.9 × 10¹⁶  cm^-3 defect density and 10.2 ns carrier lifetime. These improvements are translated into an enhancement of photovoltaic performance of PbSe solar cells, with a PCE of up to 11.6%, ≈10% higher than the previous record. Notably, the approach enables greatly improved stability and a two-month stability is successfully demonstrated. This strategy is expected to promote the fast development of PbSe CQD applications in low-cost and high-performance optoelectronic devices.

Colloidal Quantum Dot Solar Cells: Progressive Deposition Techniques and Future Prospects on Large-Area Fabrication

Colloidally grown nanosized semiconductors yield extremely high-quality optoelectronic materials. Many examples have pointed to near perfect photoluminescence quantum yields, allowing for technology-leading materials such as high purity color centers in display technology. Furthermore, because of high chemical yield, and improved understanding of the surfaces, these materials, particularly colloidal quantum dots (QDs) can also be ideal candidates for other optoelectronic applications. Given the urgent necessity toward carbon neutrality, electricity from solar photovoltaics will play a large role in the power generation sector. QDs are developed and shown dramatic improvements over the past 15 years as photoactive materials in photovoltaics with various innovative deposition properties which can lead to exceptionally low-cost and high-performance devices. Once the key issues related to charge transport in optically thick arrays are addressed, QD-based photovoltaic technology can become a better candidate for practical application. In this article, the authors show how the possibilities of different deposition techniques can bring QD-based solar cells to the industrial level and discuss the challenges for perovskite QD solar cells in particular, to achieve large-area fabrication for further advancing technology to solve pivotal energy and environmental issues.

Phase-Transfer Exchange Lead Chalcogenide Colloidal Quantum Dots: Ink Preparation, Film Assembly, and Solar Cell Construction

Solution-processed colloidal quantum dots (CQDs) are promising candidates for the third-generation photovoltaics due to their low cost and spectral tunability. The development of CQD solar cells mainly relies on high-quality CQD ink, smooth and dense film, and charge-extraction-favored device architectures. In particular, advances in the processing of CQDs are essential for high-quality QD solids. The phase transfer exchange (PTE), in contrast with traditional solid-state ligand exchange, has demonstrated to be the most promising approach for high-quality QD solids in terms of charge transport and defect passivation. As a result, the efficiencies of Pb chalcogenide CQD solar cells have been rapidly improved to 14.0%. In this review, the development of the PTE method is briefly reviewed for lead chalcogenide CQD ink preparation, film assembly, and device construction. Particularly, the key roles of lead halides and additional additives are emphasized for defect passivation and charge transport improvement. In the end, several potential directions for future research are proposed.

Open-Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (V_oc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high V_oc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the V_oc loss is first analyzed via detailed balance theory and the origin of V_oc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the V_oc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the V_oc loss are summarized. Finally, various strategies are discussed to reduce interface V_oc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.

Passivating Quantum Dot Carrier Transport Layer with Metal Salts

Quantum dots (QDs) have a wide range of applications in the field of optoelectronics. They have been playing multiple roles within the configuration of a device, by serving as the building blocks for both the active layer and the carrier transport layer. While the performance of various optoelectronic devices has been steadily improving via developments in passivating the QD active layer, the possible improvement via passivation of the QD-based carrier transport layer has been largely overlooked. Here, with lead sulfide QD photovoltaics as the platform of study, we demonstrate that the device performance can be significantly improved by passivating the QD hole transport layer (HTL) with zinc salt post-treatments. The power conversion efficiency is improved from 8.7% of the reference device to 10.2% and 9.5% for devices with zinc acetate (ZnAc)- and zinc iodide (ZnI₂)-treated HTLs, respectively. Transient absorption spectroscopy confirms that both treatments effectively reduce band-tail states and increase carrier lifetime of the HTLs. Further elemental analysis shows that ZnAc provides a higher amount of Zn²⁺ for passivation while maintaining the function of HTL by allowing essential p-doping oxidation. In contrast, the additional I^- passivation from ZnI₂ inhibits p-doping oxidation and limits the function of HTL. This work demonstrates the potential of improving device performance by passivating the QD-based HTLs, and the method developed is likely applicable to other optoelectronic devices.

Highly fluorescent CsPbBr3/TiO2 core/shell perovskite nanocrystals with excellent stability

The poor stability of CsPbX3 (X = Cl, Br, I) perovskite nanocrystals is the most impediment to its application in the field of photoelectrics. In this work, monodisperse CsPbBr3/TiO2 nanocrystals are successfully prepared by coating titanium precursor on the surface of colloidal CsPbBr3 nanocrystals at room temperature. The CsPbBr3/TiO2 nanocomposites exhibit excellent stability, remaining the identical particle size (9.2 nm), crystal structures and optical properties. Time-resolved photoluminescence decay shows that the lifetime of CsPbBr3/TiO2 nanocrystals is about 4.04 ns and keeps great stability after lasting two months in the air. Results show that the coating of TiO2 on CsPbBr3 NCs greatly suppressed the anion exchange and photodegradation, which are the main reasons for dramatically improving their chemical stability and photostability. The results provide an effective method to solve the stability problem of perovskite nanostructures and are expected to have a promising application in optoelectronic fields

Article highlights

Flexible and efficient perovskite quantum dot solar cells via hybrid interfacial architecture

All-inorganic CsPbI₃ perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI₃ quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI₃ quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.

Optimizing Surface Chemistry of PbS Colloidal Quantum Dot for Highly Efficient and Stable Solar Cells via Chemical Binding

The surface chemistry of colloidal quantum dots (CQD) play a crucial role in fabricating highly efficient and stable solar cells. However, as-synthesized PbS CQDs are significantly off-stoichiometric and contain inhomogeneously distributed S and Pb atoms at the surface, which results in undercharged Pb atoms, dangling bonds of S atoms and uncapped sites, thus causing surface trap states. Moreover, conventional ligand exchange processes cannot efficiently eliminate these undesired atom configurations and defect sites. Here, potassium triiodide (KI3) additives are combined with conventional PbX2 matrix ligands to simultaneously eliminate the undercharged Pb species and dangling S sites via reacting with molecular I2 generated from the reversible reaction KI3 ⇌ I2 + KI. Meanwhile, high surface coverage shells on PbS CQDs are built via PbX2 and KI ligands. The implementation of KI3 additives remarkably suppresses the surface trap states and enhances the device stability due to the surface chemistry optimization. The resultant solar cells achieve the best power convention efficiency of 12.1% and retain 94% of its initial efficiency under 20 h continuous operation in air, while the control devices with KI additive deliver an efficiency of 11.0% and retains 87% of their initial efficiency under the same conditions.

Enhancing the Efficiency and Stability of PbS Quantum Dot Solar Cells through Engineering an Ultrathin NiO Nanocrystalline Interlayer

Significant progress in PbS quantum dot solar cells has been achieved through designing device architecture, engineering band alignment, and optimizing the surface chemistry of colloidal quantum dots (CQDs). However, developing a highly stable device while maintaining the desirable efficiency is still a challenging issue for these emerging solar cells. In this study, by introducing an ultrathin NiO nanocrystalline interlayer between Au electrodes and the hole-transport layer of the PbS-EDT, the resulting PbS CQD solar cell efficiency is improved from 9.3 to 10.4% because of the improved hole-extraction efficiency. More excitingly, the device stability is significantly enhanced owing to the passivation effect of the robust NiO nanocrystalline interlayer. The solar cells with the NiO nanocrystalline interlayer retain 95 and 97% of the initial efficiency when heated at 80 °C for 120 min and treated with oxygen plasma irradiation for 60 min, respectively. In contrast, the control devices without the NiO nanocrystalline interlayer retain only 75 and 63% of the initial efficiency under the same testing conditions.

Direct vs Delayed Triplet Energy Transfer from Organic Semiconductors to Quantum Dots and Implications for Luminescent Harvesting of Triplet Excitons

Hybrid inorganic-organic materials such as quantum dots (QDs) coupled with organic semiconductors have a wide range of optoelectronic applications, taking advantage of the respective materials' strengths. A key area of investigation in such systems is the transfer of triplet exciton states to and from QDs, which has potential applications in the luminescent harvesting of triplet excitons generated by singlet fission, in photocatalysis and photochemical upconversion. While the transfer of energy from QDs to the triplet state of organic semiconductors has been intensely studied in recent years, the mechanism and materials parameters controlling the reverse process, triplet transfer to QDs, have not been well investigated. Here, through a combination of steady-state and time-resolved optical spectroscopy we study the mechanism and energetic dependence of triplet energy transfer from an organic ligand (TIPS-tetracene carboxylic acid) to PbS QDs. Over an energetic range spanning from exothermic (-0.3 eV) to endothermic (+0.1 eV) triplet energy transfer we find that the triplet energy transfer to the QD occurs through a single step process with a clear energy dependence that is consistent with an electron exchange mechanism as described by Marcus-Hush theory. In contrast, the reverse process, energy transfer from the QD to the triplet state of the ligand, does not show any energy dependence in the studied energy range; interestingly, a delayed formation of the triplet state occurs relative to the quantum dots' decay. Based on the energetic dependence of triplet energy transfer we also suggest design criteria for future materials systems where triplet excitons from organic semiconductors are harvested via QDs, for instance in light emitting structures or the harvesting of triplet excitons generated via singlet fission.

3D microstructure analysis of silicon-boron phosphide mixed nanocrystals

The microstructure of boron (B) and phosphorus (P) codoped silicon (Si) nanocrystals (NCs), cubic boron phosphide (BP) NCs and their mixed NCs (BxSiyPz NCs) has been studied using atom probe tomography (APT), transmission electron microscopy (TEM), and Raman scattering spectroscopy. The BxSiyPz NCs inherit superior properties of B and P codoped Si NCs such as high dispersibility in aqueous media and near infrared (NIR) luminescence and those of cubic BP NCs such as high chemical stability. The microanalyses revealed that BxSiyPz NCs are composed of a crystalline core and an amorphous shell. The core possesses a lattice constant between that of Si (diamond-cubic) and BP (cubic). The amorphous shell is comprised of B, Si and P, though the composition is not uniform and there are local B-rich, Si-rich and P-rich domains connected contiguously. The amorphous shell is proposed to be responsible for their superior chemical properties such as high dispersibility in polar solvents and high resistance to acids, and the crystalline core is responsible for the stable NIR luminescence.

AgBiS2 as a low-cost and eco-friendly all-inorganic photovoltaic material: nanoscale morphology-property relationship

Solar cells made of low-cost solution-processed all-inorganic materials are a promising alternative to conventional solar cells made of high-temperature processed inorganic materials, especially because many high-temperature processed inorganic materials contain toxic element(s) such as lead or cadmium (e.g., CsPbI₃ perovskite, PbS, CdTe and CdS(Se)). AgBiS₂ nanocrystals, consisting of earth-abundant elements but without lead and cadmium, have already emerged as a promising candidate in high-performance solar cells. However, the nanoscale morphology-optoelectronic property relationship for AgBiS₂ nanocrystals is still largely unknown. Herein, we investigate the electronic properties of various AgBiS₂ nanocrystals by using first-principles computation. We show that the optoelectronic properties of bulk AgBiS₂ are highly dependent on the M-S-M-S- (M: Ag or Bi) orderings. Moreover, because Ag-S-Ag-S- and Bi-S-Bi-S- in AgBiS₂ bulk crystals contribute respectively to the valence band maximum and conduction band minimum, these unique chemical orderings actually benefit easy separation of mobile electrons and holes for photovoltaic application. More importantly, we find that AgBiS₂ nanocrystals (NCs) can exhibit markedly different optoelectronic properties, depending on their stoichiometry. NCs with minor off-stoichiometry give rise to mid-gap states, whereas NCs with substantial off-stoichiometry give rise to many deep defect states in the band gap, and some NCs even show metallic-like electronic behavior. We also find that the deep-defect states can be removed through ligand passivation with optimal coverage. The new insights into the nanoscale morphology-optoelectronic property relationship offer a rational design strategy to engineer the band alignment of AgBiS₂ NC layers while addressing some known challenging issues inherent in all-inorganic photovoltaic materials.

Efficient PbSe Colloidal Quantum Dot Solar Cells Using SnO2 as a Buffer Layer

PbSe colloidal quantum dots (CQDs) are widely used in solar cells because of their tunable band gap, solution processability, and efficient multiple exciton generation effect. The most efficient PbSe CQD solar cells use high-temperature-processed ZnO as the electron transport layer (ETL), limiting their applications in flexible photovoltaics. Currently, low-temperature solution-processed SnO₂ has been demonstrated as an efficient ETL for high-efficient PbS CQD and perovskite solar cells because of less parasitic light absorption and higher electron mobility. Herein, we introduce low-temperature solution-processed SnO₂ as ETL for PbSe CQD solar cells, and fabricate the PbSe CQD absorber layer with a one-step spin-coating method. The champion device with the structure of FTO (SnO₂:F)/SnO₂/PbSe-PbI₂/PbS-EDT (1,2-ethanedithiol)/Au achieves a high open-circuit voltage of 577.1 mV, a short-circuit current density of 24.87 mA  cm^-2, a fill factor of 67%, and an impressive power conversion efficiency of 9.67%. Our results pave the way for the development of low-temperature flexible PbSe CQD solar cells.

Quantum-Dot Tandem Solar Cells Based on a Solution-Processed Nanoparticle Intermediate Layer

Tandem cells are one of the most effective ways of breaking the single junction Shockley-Queisser limit. Solution-processable phosphate-buffered saline (PbS) quantum dots are good candidates for producing multiple junction solar cells because of their size-tunable band gap. The intermediate recombination layer (RL) connecting the subcells in a tandem solar cell is crucial for device performance because it determines the charge recombination efficiency and electrical resistance. In this work, a solution-processed ultrathin NiO and Ag nanoparticle film serves as an intermediate layer to enhance the charge recombination efficiency in PbS QD dual-junction tandem solar cells. The champion devices with device architecture of indium tin oxide/S-ZnO/1.45 eV PbS-PbI₂/PbS-EDT/NiO/Ag NP/ZnO NP/1.22 eV PbS-PbI₂/PbS-EDT/Au deliver a 7.1% power conversion efficiency, which outperforms the optimized reference subcells. This result underscores the critical role of an appropriate nanocrystalline RL in producing high-performance solution-processed PbS QD tandem cells.

Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices

The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.

Interfacial Contact Passivation for Efficient and Stable Cesium-Formamidinium Double-Cation Lead Halide Perovskite Solar Cells

Perovskite solar cells (PSCs) have achieved extremely high power conversion efficiencies (PCEs) of over 25%, but practical application still requires further improvement in the long-term stability of the device. Herein, we present an in situ interfacial contact passivation strategy to reduce the interfacial defects and extraction losses between the hole transporting layer and perovskite. The existence of PbS promotes the crystallization of perovskite, passivates the interface and grain boundary defects, and reduces the nonradiation recombination, thereby leading to a champion PCE of 21.07% with reduced hysteresis, which is one of the best results for the methylammonium (MA)-free, cesium formamidinium double-cation lead-based PSCs. Moreover, the unencapsulated device retains more than 93% and 82% of its original efficiencies after 1 year's storage under ambient conditions and thermal aging at 85°C for 1,000 h in a nitrogen atmosphere, likely due to the usage of MA-free perovskite and the enhanced surface hydrophobicity.

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An in situ interfacial defects contact passivation strategy has been developed

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PbS quantum dots were used as the passivant to reduce the traps of perovskite films

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The methylammonium-free device with passivation layer gives efficiency over 21%

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The unsealed device demonstrated excellent ambient and thermal long-term stability

Size dependent charge separation and recombination in CsPbI3 perovskite quantum dots

CsPbI₃ perovskite quantum dots (QDs) have shown great potential in light-harvesting and light-emitting applications, which often involve the transfer of charge carriers in and out of these materials. Here, we studied size-dependent charge separation (CS) and charge recombination (CR) between CsPbI₃ QDs and rhodamine B (RhB) molecules, using transient absorption spectroscopy. When the average size decreases from 11.8 nm to 6.5 nm, the average intrinsic CS time constant decreases from 872 ± 52 ps to 40.6 ± 4.3 ps and the corresponding charge recombination time constant decreases from 3829 ± 51 ns to 1384 ± 54 ns. The observed trend of size-dependent CS and CR rates can be well explained by Marcus theory using the theoretically calculated CS and CR driving forces (ΔG_CS and ΔG_CR), molecular reorganization energy (λ_RhB), and electronic coupling strength between QD and RhB (H_CS and H_CR). Unlike the extensively studied more strongly quantum confined Cd chalcogenide QDs, the CsPbI₃ QDs are in a weak quantum confinement regime in which size-dependent coupling strength plays a dominant role in the size-dependent charge transfer properties.

Lead Selenide (PbSe) Colloidal Quantum Dot Solar Cells with >10% Efficiency

Low-cost solution-processed lead chalcogenide colloidal quantum dots (CQDs) have garnered great attention in photovoltaic (PV) applications. In particular, lead selenide (PbSe) CQDs are regarded as attractive active absorbers in solar cells due to their high multiple-exciton generation and large exciton Bohr radius. However, their low air stability and occurrence of traps/defects during film formation restrict their further development. Air-stable PbSe CQDs are first synthesized through a cation exchange technique, followed by a solution-phase ligand exchange approach, and finally absorber films are prepared using a one-step spin-coating method. The best PV device fabricated using PbSe CQD inks exhibits a reproducible power conversion efficiency of 10.68%, 16% higher than the previous efficiency record (9.2%). Moreover, the device displays remarkably 40-day storage and 8 h illuminating stability. This novel strategy could provide an alternative route toward the use of PbSe CQDs in low-cost and high-performance infrared optoelectronic devices, such as infrared photodetectors and multijunction solar cells.

Highly Efficient Zn-Cu-In-Se Quantum Dot-Sensitized Solar Cells through Surface Capping with Ascorbic Acid

The balance between band structure, composition, and defect is essential for improving the optoelectronic properties of ternary and quaternary quantum dots and the corresponding photovoltaic performance. In this work, ascorbic acid (AA) as capping ligand is introduced into the reaction system to prepare green Zn-Cu-In-Se (ZCISe) quantum dots. Results show that the addition of AA can increase the Zn content while decrease the In content, resulting in enlarged band gap, high conduction band energy level, and suppressed charge recombination. When AA/Cu ratio is 1, the quantum dots possess the largest band gap of 1.49 eV and the assembled quantum dot-sensitized solar cells exhibit superior photovoltaic performance with ∼17% increment mainly contributed by the dramatically increased current density. The new record efficiencies of 10.44 and 13.85% are obtained from the ZCISe cells assembled with brass and titanium mesh-based counter electrodes, respectively.

In situ inclusion of thiocyanate for highly luminescent and stable CH3NH3PbBr3 perovskite nanocrystals

In this work, an in situ thiocyanate inclusion method for the fabrication of highly luminescent and stable CH3NH3PbBr3 perovskite nanocrystals (NCs) is developed, employing Pb(SCN)2 as the lead precursor to partially or totally replace PbBr2 in the ligand-assisted reprecipitation (LARP) process. The in situ approach not only avoids the introduction of impurity elements, but also more interestingly incorporation of thiocyanate can control the crystallinity, particle size, luminescence and stability of CH3NH3PbBr3 NCs in a simple and effective manner. By adjusting the thiocyanate concentration, the photoluminescence (PL) of the synthesized CH3NH3PbBr3 NCs can be tuned in a range of 473-526 nm, as characterized by narrow emission line widths of 21-28 nm and outstanding photoluminescence quantum yields (PLQYs) of 73% to 96%. Meanwhile, the stability of CH3NH3PbBr3 NCs can be greatly improved as the amount of thiocyanate increases. The improvement in the optical performance and stability of CH3NH3PbBr3 NCs is mainly due to the contribution of higher crystallinity and, more stable and defect-free surface passivation induced by the presence of thiocyanate. This work paves a novel way for preparing highly luminescent and stable CH3NH3PbBr3 NCs.

Polyoxometalates in dye-sensitized solar cells

Dye-sensitized solar cells (DSSCs) are the third generation of photovoltaic cells developed by Grätzel and O'Regan. They have the characteristics of low cost, simple manufacturing process, tunable optical properties, and higher photoelectric conversion efficiency (PCE). With an ever increasing energy crisis, there is an urgent need to develop highly efficient, environmentally benign, and energy-saving cell materials. Polyoxometalates (POMs), a kind of molecular inorganic quasi-semiconductor, are promising candidates for use in different parts of DSSCs due to their excellent photosensitivity, redox, and catalytic properties, as well as their relative stability. Following a brief introduction to the development of DSSCs and the potential virtues of POMs in DSSCs, we attempt to make some generalizations about the energy level regulation of POMs that is the underlying theoretical basis for their application in DSSCs, and then we summarize the research progress of POMs in DSSCs in recent years. This is organized in terms of the properties of POMs, namely, electron acceptor, photosensitivity, redox and catalysis, based on the accumulation of our research into POMs over many years. Meanwhile, in view of the fact that the properties of POMs depend primarily on their electronic structural diversity, we keep this point in mind throughout the article with a view to revealing their structure-property relationships. Finally we provide a short summary and remarks on the future outlook. This review may be of interest to synthetic chemists devoted to designing POMs with specific structures, and researchers engaged in the extension of POMs to photoelectric materials.

Bi-component synergic effect in lily-like CdS/Cu7S4 QDs for dye degradation

CdS has attracted extensive attention in the photocatalytic degradation of wastewater due to its relatively narrow bandgap and various microstructures. Previous reports have focused on CdS coupled with other semiconductors to reduce the photocorrosion and improve the photocatalytic performance. Herein, a 3D hierarchical CdS/Cu₇S₄ nanostructure was synthesized by cation exchange using lily-like CdS as template. The heterojunction material completely inherits the special skeleton of the template material and optimizes the nano-scale morphology, and achieves the transformation from nanometer structure to quantum dots (QDs). The introduction of Cu ions not only tuned the band gap of the composites to promote the utilization of solar photons, more importantly, Fenton-like catalysis was combined into the degradation process. Compared with the experiments of organic dye degradation under different illumination conditions, the degradability of the CdS/Cu₇S₄ QDs is greatly superior to pure CdS. Therefore, the constructed CdS/Cu₇S₄ QDs further realized the optimization of degradation performance by the synergic effect of photo-catalysis and Fenton-like catalysis.

CdS has attracted extensive attention in the photocatalytic degradation of wastewater due to its relatively narrow bandgap and various microstructures.

Quantum Dot Solar Cells: Small Beginnings Have Large Impacts

From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.

Lead Selenide Colloidal Quantum Dot Solar Cells Achieving High Open-Circuit Voltage with One-Step Deposition Strategy

Lead selenide (PbSe) colloidal quantum dots (CQDs) are considered to be a strong candidate for high-efficiency colloidal quantum dot solar cells (CQDSCs) due to its efficient multiple exciton generation. However, currently, even the best PbSe CQDSCs can only display open-circuit voltage ( V_oc) about 0.530 V. Here, we introduce a solution-phase ligand exchange method to prepare PbI₂-capped PbSe (PbSe-PbI₂) CQD inks, and for the first time, the absorber layer of PbSe CQDSCs was deposited in one step by using this PbSe-PbI₂ CQD inks. One-step-deposited PbSe CQDs absorber layer exhibits fast charge transfer rate, reduced energy funneling, and low trap assisted recombination. The champion large-area (active area is 0.35 cm²) PbSe CQDSCs fabricated with one-step PbSe CQDs achieve a power conversion efficiency (PCE) of 6.0% and a V_oc of 0.616 V, which is the highest V_oc among PbSe CQDSCs reported to date.

Surface ligand modification of cesium lead bromide nanocrystals for improved light-emitting performance

Cesium lead halide perovskite nanocrystals (NCs) possess excellent optical properties at visible wavelengths with great promise for applications in luminous display fields. We demonstrate a method to modify the surface ligand passivation of perovskite NCs for enhanced colloidal stability and emitting properties by incorporating didodecyl dimethyl ammonium bromide (DDAB). The photoluminescence quantum yield of the NC solution was improved to 96% from 70% and the perovskite film showed fewer trapped sites and enhanced carrier transport ability. The thus fabricated electroluminescent perovskite NC-LEDs exhibited a bright luminance of 11 990 cd m-2, corresponding to 4-times improved external quantum efficiency (EQE), compared to the control device using regular NCs without DDAB.

Charge recombination control for high efficiency CdS/CdSe quantum dot co-sensitized solar cells with multi-ZnS layers

ZnS as an inorganic passivation agent has been proven to be effective in suppressing charge recombination and enhancing power conversion efficiency (PCE) in quantum dot-sensitized solar cells (QDSCs).