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Odebowale AA, Abdulghani A, Berhe AM, Somaweera D, Akter S, Abdo S, As'ham K, Saadabad RM, Tran TT, Bishop DP, Solntsev AS, Miroshnichenko AE, Hattori HT. Emerging Low Detection Limit of Optically Activated Gas Sensors Based on 2D and Hybrid Nanostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1521. [PMID: 39330677 PMCID: PMC11435144 DOI: 10.3390/nano14181521] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2024] [Revised: 09/06/2024] [Accepted: 09/17/2024] [Indexed: 09/28/2024]
Abstract
Gas sensing is essential for detecting and measuring gas concentrations across various environments, with applications in environmental monitoring, industrial safety, and healthcare. The integration of two-dimensional (2D) materials, organic materials, and metal oxides has significantly advanced gas sensor technology, enhancing its sensitivity, selectivity, and response times at room temperature. This review examines the progress in optically activated gas sensors, with emphasis on 2D materials, metal oxides, and organic materials, due to limited studies on their use in optically activated gas sensors, in contrast to other traditional gas-sensing technologies. We detail the unique properties of these materials and their impact on improving the figures of merit (FoMs) of gas sensors. Transition metal dichalcogenides (TMDCs), with their high surface-to-volume ratio and tunable band gap, show exceptional performance in gas detection, especially when activated by UV light. Graphene-based sensors also demonstrate high sensitivity and low detection limits, making them suitable for various applications. Although organic materials and hybrid structures, such as metal-organic frameworks (MoFs) and conducting polymers, face challenges related to stability and sensitivity at room temperature, they hold potential for future advancements. Optically activated gas sensors incorporating metal oxides benefit from photoactive nanomaterials and UV irradiation, further enhancing their performance. This review highlights the potential of the advanced materials in developing the next generation of gas sensors, addressing current research gaps and paving the way for future innovations.
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Affiliation(s)
- Ambali Alade Odebowale
- School of Engineering and Technology, The University of New South Wales at Canberra, Campbell, ACT 2612, Australia
| | - Amer Abdulghani
- School of Engineering and Technology, The University of New South Wales at Canberra, Campbell, ACT 2612, Australia
| | - Andergachew Mekonnen Berhe
- School of Engineering and Technology, The University of New South Wales at Canberra, Campbell, ACT 2612, Australia
| | - Dinelka Somaweera
- School of Engineering and Technology, The University of New South Wales at Canberra, Campbell, ACT 2612, Australia
| | - Sanjida Akter
- School of Engineering and Technology, The University of New South Wales at Canberra, Campbell, ACT 2612, Australia
| | - Salah Abdo
- School of Engineering and Technology, The University of New South Wales at Canberra, Campbell, ACT 2612, Australia
| | - Khalil As'ham
- School of Engineering and Technology, The University of New South Wales at Canberra, Campbell, ACT 2612, Australia
| | - Reza Masoudian Saadabad
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Toan T Tran
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - David P Bishop
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Alexander S Solntsev
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Andrey E Miroshnichenko
- School of Engineering and Technology, The University of New South Wales at Canberra, Campbell, ACT 2612, Australia
| | - Haroldo T Hattori
- School of Engineering and Technology, The University of New South Wales at Canberra, Campbell, ACT 2612, Australia
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2
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Huang W, Yang Y, Zhang H. Surface Engineering of Two-Dimensional Black Phosphorus for Advanced Nanophotonics. Acc Chem Res 2024; 57:2464-2475. [PMID: 38991156 DOI: 10.1021/acs.accounts.4c00251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/13/2024]
Abstract
ConspectusEverything in the world has two sides. We should correctly understand its two sides to pursue the positive side and get rid of the negative side. Recently, two-dimensional (2D) black phosphorus (BP) has received a tremendous amount of attention and has been applied for broad applications in optoelectronics, transistors, logic devices, and biomedicines due to its intrinsic properties, e.g., thickness-dependent bandgap, high mobility, highly anisotropic charge transport, and excellent biodegradability and biocompatibility. On one hand, rapid degradation of 2D BP under ambient conditions becomes a vital bottleneck that largely hampers its practical applications in optical and optoelectronic devices and photocatalysis. On the other hand, just because of its ambient instability, 2D BP as a novel kind of nanomedicine in a cancer drug delivery system can not only satisfy effective cancer therapy but also enable its safe biodegradation in vivo. Until now, a variety of surface functionality types and approaches have been employed to rationally modify 2D BP to meet the growing requirements of advanced nanophotonics.In this Account, we describe our research on surface engineering of 2D BP in two opposite ways: (i) stabilizing 2D BP by various approaches for advanced nanophotonic devices with both remarkable photoresponse behavior and environmentally structural stability and (ii) making full use of biodegradation, biocompatibility, and biological activity (e.g., photothermal therapy, photodynamic therapy, and bioimaging) of 2D BP for the construction of high-performance delivery nanoplatforms for biophotonic applications. We highlight the targeted aims of the surface-engineered 2D BP for advanced nanophotonics, including photonic devices (optics, optoelectronics, and photocatalysis) and photoinduced cancer therapy, by means of various surface functionalities, such as heteroatom incorporation, polymer functionalization, coating, heterostructure design, etc. From the viewpoint of potential applications, the fundamental properties of surface-engineered 2D BP and recent advances in surface-engineered 2D BP-based nanophotonic devices are briefly discussed. For the photonic devices, surface-engineered 2D BP can not only effectively improve environmentally structural stability but also simultaneously maintain photoresponse performance, enabling 2D BP-based devices for a wide range of practical applications. In terms of the photoinduced cancer therapy, surface-engineered 2D BP is more appropriate for the treatment of cancer due to negligible toxicity and excellent biodegradation and biocompatibility. We also provide our perspectives on future opportunities and challenges in this important and fast-growing field. It is envisioned that this Account can attract more attention in this area and inspire more scientists in a variety of research communities to accelerate the development of 2D BP for more widespread high-performance nanophotonic applications.
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Affiliation(s)
- Weichun Huang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, P. R. China
| | - Yuming Yang
- Key Laboratory of Neuroregeneration Ministry of Education and Jiangsu Province Co-Innovation Center of Neuroregeneration, Jiangsu Clinical Medicine Center of Tissue Engineering and Nerve Injury Repair, Nantong University, Nantong 226001, P. R. China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
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Gerile S, Shen Q, Kang J, Liu W, Dong A. Current advances in black phosphorus-based antibacterial nanoplatform for infection therpy. Colloids Surf B Biointerfaces 2024; 241:114037. [PMID: 38878660 DOI: 10.1016/j.colsurfb.2024.114037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Revised: 06/01/2024] [Accepted: 06/12/2024] [Indexed: 07/29/2024]
Abstract
Black phosphorus (BP) has attracted much attention due to its excellent physiochemical properties. However, due to its biodegradability and simple antibacterial mechanism, using only BP nanomaterials to combat bacterial infections caused by drug-resistant pathogens remains a significant challenge. In order to improve the antibacterial efficiency and avoid the emergence of drug resistance, BP nanomaterials have been combined with other functional materials to form black phosphorus-based antibacterial nanoplatform (BPANP), which provides unprecedented opportunities for the treatment of drug-resistant infections. This article reviews the performance of BPANP and its multiple antibacterial mechanisms while emphatically introducing its design direction and latest application progress in antibacterial fields. Moreover, this paper additionally summarizes and discusses the current challenges and inadequacies of BPANP that need to be improved in future research. We believe that this review will provide researchers with an up-to-date and multifaceted reference, and provide new ideas for designing effective strategies against drug-resistant bacteria.
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Affiliation(s)
- Saren Gerile
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, PR China
| | - Qiudi Shen
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, PR China
| | - Jing Kang
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, PR China.
| | - Wenxin Liu
- College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, PR China.
| | - Alideertu Dong
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, PR China.
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4
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Zhang L, Zhang Y, Xu S, Zhao R, Zhai W, Wang J. A Flexible MXene-Black Phosphorus/Zinc Oxide Hybrid Structure with Excellent UVA-Specific Photoelectric Sensing Properties for Human Skin Protection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403360. [PMID: 39105450 DOI: 10.1002/smll.202403360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2024] [Revised: 07/18/2024] [Indexed: 08/07/2024]
Abstract
Ultraviolet A (UVA) radiation causes various irreversible damages to human skin, so the research about UVA-specific sensing device is urgent. 2D black phosphorus (BP) is used in many photosensors due to its advantages of high carrier mobility and tunable bandgap, but its application for UVA-specific photosensor is not reported. Here, a MXene-BP/Zinc oxide (ZnO) hybrid structure with lamellar-spherical interfaces like finger lime fruit is prepared by the layer-by-layer assembly (LLA) method, and p-n junctions are constructed between BP and ZnO with the Ti3C2Tx electrode, showing excellent photoelectric performance. Density functional theory (DFT) calculations demonstrate that the enhanced performance is attributed to the rapid separation of photogenerated carriers in the presence of a built-in electric field at interface. Furthermore, a flexible MXene-BP/ZnO based UVA-specific photosensor is prepared, which shows a specific response to UVA as high as 7 mA W-1 and excellent mechanical stability, maintaining 98.46% response after 100 bending cycles. In particular, the integrated anti-UVA skin protection device shows excellent UVA-specific identification and wireless transmission capability, which can provide timely UVA exposure information and skin protection warning for the visually impaired. This work demonstrates a new approach for further developments of advanced photoelectric sensing technology toward improving people's skin health protection.
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Affiliation(s)
- Liangshutong Zhang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions & Shaanxi Provincial Key Laboratory of Condensed Matter Structure and Properties, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Yupu Zhang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions & Shaanxi Provincial Key Laboratory of Condensed Matter Structure and Properties, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Shuchang Xu
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions & Shaanxi Provincial Key Laboratory of Condensed Matter Structure and Properties, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Ruowen Zhao
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions & Shaanxi Provincial Key Laboratory of Condensed Matter Structure and Properties, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Wei Zhai
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions & Shaanxi Provincial Key Laboratory of Condensed Matter Structure and Properties, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Jianyuan Wang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions & Shaanxi Provincial Key Laboratory of Condensed Matter Structure and Properties, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
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Li W, Liu X, He P, Hu W, Tang K, Wen Y, Zeng Q, Tang H, Lei Y, Liu X. AuNPs-BP-MWCNTs-COOH-based electrochemical immunosensor for the determination of deoxynivalenol in wheat flour. ANALYTICAL METHODS : ADVANCING METHODS AND APPLICATIONS 2024; 16:5231-5238. [PMID: 39007341 DOI: 10.1039/d4ay00683f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/16/2024]
Abstract
Deoxynivalenol (DON) has drawn considerable attention for its obvious pathogenicity and wide use in agro-products, which cause a potential threat to human health. In this work, an electrochemical immunosensor is developed for the highly sensitive and selective detection of DON in wheat flour using AuNPs-BP-MWCNTs-COOH and antibodies. The AuNPs-BP-MWCNTs-COOH nanocomposite was prepared via an in situ reduction reaction and ultrasonic-assisted liquid-phase exfoliation. The nanocomposite exhibits a larger surface area, decent stability, excellent electron transfer capability, good protein binding capability and prominent specificity. The plentiful carboxyl group on the nanocomposite can bind to the amino group of the antibody, and AuNPs have an affinity for the sulfhydryl group of the antibody, which makes it feasible for the nanocomposite to load the antibody. The peak currents are plotted against the logarithm of DON concentration from 0.002 to 80 ng mL-1 with a limit of detection (LOD) of 0.5 pg mL-1. This approach establishes an effective label-free immunosensor platform for the detection of DON with high sensitivity and selectivity in various food and agricultural products.
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Affiliation(s)
- Weiqiang Li
- College of Food Science and Engineering, Jiangxi Agricultural University, Nanchang 330045, China.
| | - Xiaoxue Liu
- College of Food Science and Engineering, Jiangxi Agricultural University, Nanchang 330045, China.
- Institute of Functional Materials and Agricultural Applied Chemistry, Key Laboratory of Chemical Utilization of Plant Resources of Nanchang, Jiangxi Agricultural University, Nanchang 330045, China.
| | - Pianpian He
- College of Food Science and Engineering, Jiangxi Agricultural University, Nanchang 330045, China.
- Institute of Functional Materials and Agricultural Applied Chemistry, Key Laboratory of Chemical Utilization of Plant Resources of Nanchang, Jiangxi Agricultural University, Nanchang 330045, China.
| | - Wentao Hu
- Institute of Functional Materials and Agricultural Applied Chemistry, Key Laboratory of Chemical Utilization of Plant Resources of Nanchang, Jiangxi Agricultural University, Nanchang 330045, China.
| | - Kaijie Tang
- College of Food Science and Engineering, Jiangxi Agricultural University, Nanchang 330045, China.
| | - Yangping Wen
- Institute of Functional Materials and Agricultural Applied Chemistry, Key Laboratory of Chemical Utilization of Plant Resources of Nanchang, Jiangxi Agricultural University, Nanchang 330045, China.
| | - Qian Zeng
- College of Food Science and Engineering, Jiangxi Agricultural University, Nanchang 330045, China.
- Institute of Functional Materials and Agricultural Applied Chemistry, Key Laboratory of Chemical Utilization of Plant Resources of Nanchang, Jiangxi Agricultural University, Nanchang 330045, China.
| | - Huiyi Tang
- College of Food Science and Engineering, Jiangxi Agricultural University, Nanchang 330045, China.
- Institute of Functional Materials and Agricultural Applied Chemistry, Key Laboratory of Chemical Utilization of Plant Resources of Nanchang, Jiangxi Agricultural University, Nanchang 330045, China.
| | - Yaxuan Lei
- Institute of Functional Materials and Agricultural Applied Chemistry, Key Laboratory of Chemical Utilization of Plant Resources of Nanchang, Jiangxi Agricultural University, Nanchang 330045, China.
| | - Xin Liu
- Institute of Functional Materials and Agricultural Applied Chemistry, Key Laboratory of Chemical Utilization of Plant Resources of Nanchang, Jiangxi Agricultural University, Nanchang 330045, China.
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Yi K, Wu Y, An L, Deng Y, Duan R, Yang J, Zhu C, Gao W, Liu Z. Van der Waals Encapsulation by Ultrathin Oxide for Air-Sensitive 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403494. [PMID: 38863206 DOI: 10.1002/adma.202403494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2024] [Revised: 05/22/2024] [Indexed: 06/13/2024]
Abstract
The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones, such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga2O3 from liquid gallium. Taking advantage of the robust isolation ability against ambient environment of the dense native oxide of gallium, hundreds of times longer retention time of (opto)electronic properties of encapsulated BP and MoTe2 devices is realized than unencapsulated devices. Due to the ultrathin high-κ properties of Ga2O3, top-gated devices are directly fabricated with the encapsulation layer, simultaneously as a dielectric layer. This direct device fabrication is realized by selective etching of Ga2O3, leaving the encapsulated materials intact. Encapsulated 1T' MoTe2 exhibits high conductivity even after 150 days in ambient environment. This method is, therefore, highlighted as a promising and distinctive one compared with traditional passivation approaches.
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Affiliation(s)
- Kongyang Yi
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yao Wu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Liheng An
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Ya Deng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jiefu Yang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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Boidi G, Ronai B, Heift D, Benini F, Varga M, Righi MC, Rosenkranz A. Tribology of 2D black phosphorus - Current state-of-the-art and future potential. Adv Colloid Interface Sci 2024; 328:103180. [PMID: 38754213 DOI: 10.1016/j.cis.2024.103180] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2023] [Revised: 04/30/2024] [Accepted: 05/05/2024] [Indexed: 05/18/2024]
Abstract
Since the first mechanical exfoliation of graphene in 2004, the interest in 2D materials has significantly risen due to their outstanding property combination. Multiple 2D materials have been synthesized until today, while black phosphorus (BP) resembles one of their latest additions. The unique properties of BP, especially for electronic and optical devices (i.e., high carrier mobility and electrical conduction, field-effect transistor, layer-dependent bandgap, anisotropic transport), have gained notable attention. However, its layered structure, similar to those of graphene and MoS2, is also advantageous to optimize the friction and wear performance. Moreover, the strong in-plane covalent bonds and weak interlayer van-der-Waals forces favour the formation of low-friction and wear-resistant films. Although BP holds a great tribological potential, the literature to date on this topic is rather scarce. Therefore, it is a timely moment to holistically summarize the synthesis approaches and properties of BP thus guiding interested researchers to use it in mechanical/tribological applications. The existing state-of-the-art regarding tribological research is critically discussed and compared to other 2D materials thus highlighting existing research gaps and paving the way for future research activities.
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Affiliation(s)
- Guido Boidi
- AC2T research GmbH, Viktor-Kaplan-Straße 2/C, Wiener Neustadt 2700, Austria
| | - Bettina Ronai
- AC2T research GmbH, Viktor-Kaplan-Straße 2/C, Wiener Neustadt 2700, Austria
| | - Dominikus Heift
- School of Life Sciences, Pharmacy and Chemistry, Kingston University, Penrhyn Road, Kingston-upon-Thames KT1 2EE, UK
| | - Francesca Benini
- Department of Physics and Astronomy "Augusto Righi", University of Bologna, Bologna 40127, Italy
| | - Markus Varga
- AC2T research GmbH, Viktor-Kaplan-Straße 2/C, Wiener Neustadt 2700, Austria
| | - Maria Clelia Righi
- Department of Physics and Astronomy "Augusto Righi", University of Bologna, Bologna 40127, Italy
| | - Andreas Rosenkranz
- Department of Chemical Engineering, Biotechnology and Materials, FCFM, University of Chile, Santiago 8370415, Chile.
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Wang Y, Zhang H, Qiang H, Li M, Cai Y, Zhou X, Xu Y, Yan Z, Dong J, Gao Y, Pan C, Yin X, Gao J, Zhang T, Yu Z. Innovative Biomaterials for Bone Tumor Treatment and Regeneration: Tackling Postoperative Challenges and Charting the Path Forward. Adv Healthc Mater 2024; 13:e2304060. [PMID: 38429938 DOI: 10.1002/adhm.202304060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/19/2023] [Revised: 02/24/2024] [Indexed: 03/03/2024]
Abstract
Surgical resection of bone tumors is the primary approach employed in the treatment of bone cancer. Simultaneously, perioperative interventions, particularly postoperative adjuvant anticancer strategies, play a crucial role in achieving satisfactory therapeutic outcomes. However, the occurrence of postoperative bone tumor recurrence, metastasis, extensive bone defects, and infection are significant risks that can result in unfavorable prognoses or even treatment failure. In recent years, there has been significant progress in the development of biomaterials, leading to the emergence of new treatment options for bone tumor therapy and bone regeneration. This progress report aims to comprehensively analyze the strategic development of unique therapeutic biomaterials with inherent healing properties and bioactive capabilities for bone tissue regeneration. These composite biomaterials, classified into metallic, inorganic non-metallic, and organic types, are thoroughly investigated for their responses to external stimuli such as light or magnetic fields, internal interventions including chemotherapy or catalytic therapy, and combination therapy, as well as their role in bone regeneration. Additionally, an overview of self-healing materials for osteogenesis is provided and their potential applications in combating osteosarcoma and promoting bone formation are explored. Furthermore, the safety concerns of integrated materials and current limitations are addressed, while also discussing the challenges and future prospects.
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Affiliation(s)
- Yu Wang
- Department of Orthopedics, Jinshan Hospital, Fudan University, Shanghai, 201508, P. R. China
| | - Huaiyuan Zhang
- Department of Orthopedics, Jinshan Hospital, Fudan University, Shanghai, 201508, P. R. China
| | - Huifen Qiang
- Changhai Clinical Research Unit, The First Affiliated Hospital of Naval Medical University, Shanghai, 200433, P. R. China
- Shanghai Key Laboratory of Nautical Medicine and Translation of Drugs and Medical Devices, Shanghai, 200433, P. R. China
| | - Meigui Li
- School of Pharmacy, Henan University, Kaifeng City, Henan, 475004, P. R. China
| | - Yili Cai
- Department of Gastroenterology, Naval Medical Center, Naval Medical University, Shanghai, 200052, P. R. China
| | - Xuan Zhou
- School of Pharmacy, Henan University, Kaifeng City, Henan, 475004, P. R. China
| | - Yanlong Xu
- Department of Orthopedics, Jinshan Hospital, Fudan University, Shanghai, 201508, P. R. China
| | - Zhenzhen Yan
- Department of Burn Surgery, The First Affiliated Hospital of Naval Medical University, Shanghai, 200433, P. R. China
| | - Jinhua Dong
- The Women and Children Hospital Affiliated to Jiaxing University, Jiaxing, Zhejiang, 314000, P. R. China
| | - Yuan Gao
- School of Health Science and Engineering, University of Shanghai for Science and Technology, Shanghai, 200433, P. R. China
| | - Chengye Pan
- Department of Gastroenterology, The First Affiliated Hospital of Naval Medical University, Shanghai, 200433, P. R. China
| | - Xiaojing Yin
- Department of Gastroenterology, The First Affiliated Hospital of Naval Medical University, Shanghai, 200433, P. R. China
| | - Jie Gao
- Changhai Clinical Research Unit, The First Affiliated Hospital of Naval Medical University, Shanghai, 200433, P. R. China
- Shanghai Key Laboratory of Nautical Medicine and Translation of Drugs and Medical Devices, Shanghai, 200433, P. R. China
| | - Tinglin Zhang
- Changhai Clinical Research Unit, The First Affiliated Hospital of Naval Medical University, Shanghai, 200433, P. R. China
- Shanghai Key Laboratory of Nautical Medicine and Translation of Drugs and Medical Devices, Shanghai, 200433, P. R. China
| | - Zuochong Yu
- Department of Orthopedics, Jinshan Hospital, Fudan University, Shanghai, 201508, P. R. China
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Shen Q, Li Z, Bai H, Gu M, Kang J, Jia R, Zhang J, Dong A. Regulation of band gap and localized surface plasmon resonance by loading Au nanorods on violet phosphene nanosheets for photodynamic/photothermal synergistic anti-infective therapy. J Mater Chem B 2024; 12:3392-3403. [PMID: 38512335 DOI: 10.1039/d4tb00105b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/22/2024]
Abstract
In the face of the serious threat to human health and the economic burden caused by bacterial antibiotic resistance, 2D phosphorus nanomaterials have been widely used as antibacterial agents. Violet phosphorus nanosheets (VPNSs) are an exciting bandgap-adjustable 2D nanomaterial due to their good physicochemical properties, yet the study of VPNS-based antibiotics is still in its infancy. Here, a composite of gold nanorods (AuNRs) loaded onto VPNS platforms (VPNS/AuNR) is constructed to maximize the potential of VPNSs for antimicrobial applications. The loading with AuNRs not only enhances the photothermal performance via a localized surface plasmon resonance (LSPR) effect, but also enhances the light absorption capacity due to the narrowing of the band gap of the VPNSs, thus increasing the ROS generation capacity. The results demonstrate that VPNS/AuNR exhibits outstanding antibacterial properties and good biocompatibility. Attractively, VPNS/AuNR is then extensively tested for treating skin wound infections, suggesting promising in vivo antibacterial and wound-healing features. Our findings may open a novel direction to develop a versatile VPNS-based treatment platform, which can significantly boost the progress of VPNS exploration.
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Affiliation(s)
- Qiudi Shen
- College of Chemistry and Chemical Engineering, Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, 235 University West Street, Hohhot 010021, China.
| | - Zhihao Li
- Department of Chemistry, College of Sciences, Northeastern University, Shenyang 110819, China
| | - Haoran Bai
- College of Chemistry and Chemical Engineering, Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, 235 University West Street, Hohhot 010021, China.
| | - Mengyue Gu
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jing Kang
- College of Chemistry and Chemical Engineering, Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, 235 University West Street, Hohhot 010021, China.
| | - Ran Jia
- Institute of Theoretical Chemistry, College of Chemistry, Jilin University, 130023 Changchun, P. R. China
| | - Jinying Zhang
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Alideertu Dong
- College of Chemistry and Chemical Engineering, Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, 235 University West Street, Hohhot 010021, China.
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10
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Yang T, Qu J, Yang X, Cai Y, Hu J. Recent advances in ambient-stable black phosphorus materials for artificial catalytic nitrogen cycle in environment and energy. ENVIRONMENTAL POLLUTION (BARKING, ESSEX : 1987) 2024; 345:123522. [PMID: 38331240 DOI: 10.1016/j.envpol.2024.123522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Revised: 02/03/2024] [Accepted: 02/05/2024] [Indexed: 02/10/2024]
Abstract
Nitrogen cycle is crucial for the Earth's ecosystem and human-nature coexistence. However, excessive fertilizer use and industrial contamination disrupt this balance. Semiconductor-based artificial nitrogen cycle strategies are being actively researched to address this issue. Black phosphorus (BP) exhibits remarkable performance and significant potential in this area due to its unique physical and chemical properties. Nevertheless, its practical application is hindered by ambient instability. This review covers the synthesis methods of BP materials, analyzes their instability factors under environmental conditions, discusses stability improvement strategies, and provides an overview of the applications of ambient-stable BP materials in nitrogen cycle, including N2 fixation, NO3- reduction, NOx removal and nitrides sensing. The review concludes by summarizing the challenges and prospects of BP materials in the nitrogen cycle, offering valuable guidance to researchers.
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Affiliation(s)
- Tingyu Yang
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Jiafu Qu
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Xiaogang Yang
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Yahui Cai
- College of Materials Science and Engineering, Nanjing Forestry University, Nanjing, 210037, China
| | - Jundie Hu
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, China; College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
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11
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Zhang Y, Chen X, Fang D, Yan H, Wang D, Wang X, Li J, Zhai Y, Chu X, Wang D, Zhao H, Fang X. Adsorption Behavior of NO and NO 2 on Two-Dimensional As, Sb, and Bi Materials: First-Principles Insights. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1024. [PMID: 38473496 DOI: 10.3390/ma17051024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 02/07/2024] [Accepted: 02/09/2024] [Indexed: 03/14/2024]
Abstract
To address the most significant environmental challenges, the quest for high-performance gas sensing materials is crucial. Among numerous two-dimensional materials, this study investigates the gas-sensitive capabilities of monolayer As, Sb, and Bi materials. To compare the gas detection abilities of these three materials, we employ first-principles calculations to comprehensively study the adsorption behavior of NO and NO2 gas molecules on the material surfaces. The results indicate that monolayer Bi material exhibits reasonable adsorption distances, substantial adsorption energies, and significant charge transfer for both NO and NO2 gases. Therefore, among the materials studied, it demonstrates the best gas detection capability. Furthermore, monolayer As and Sb materials exhibit remarkably high capacities for adsorbing NO and NO2 gas molecules, firmly interacting with the gas molecules. Gas adsorption induces changes in the material's work function, suggesting the potential application of these two materials as catalysts.
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Affiliation(s)
- Yuting Zhang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Xi Chen
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Dan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Hao Yan
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Xiaohua Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Jinhua Li
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Yingjiao Zhai
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Xueying Chu
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Dongbo Wang
- Department of Opto-Electronic Information Science, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Hongbin Zhao
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
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12
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Cheng H, Zhang S, Guo W, Wu Q, Shen Z, Wang L, Zhong W, Li D, Zhang B, Liu C, Wang Y, Lu Y. Hydrolysis of Solid Buffer Enables High-Performance Aqueous Zinc Ion Battery. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307052. [PMID: 38063837 PMCID: PMC10870042 DOI: 10.1002/advs.202307052] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 11/06/2023] [Indexed: 02/17/2024]
Abstract
Aqueous zinc (Zn) ion batteries (AZIBs) have not yet fulfilled their talent of high safety and low cost since the anode/electrolyte interface (AEI) has long been impeded by hydrogen evolution, surface corrosion, dendritic growth, and by-product accumulation. Here, the hydrolysis of solid buffers is elaborately proposed to comprehensively and enduringly handle these issues. Take 2D layered black phosphorus (BP) as a hydrolytic subject. It is reported that the phosphoric acid generated by hydrolysis in an aqueous electrolyte produces a zinc phosphate (ZPO) rich solid electrolyte interphase (SEI) layer, which largely inhibits the dendrite growth, surface corrosion, and hydrogen evolution. Meanwhile, the hydrolytic phosphoric acid stabilizes the pH value near AEI, avoiding the accumulation of alkaline by-products. Notably, compared with the disposable ZPO engineerings of anodic SEI pre-construction and electrolyte additive, the hydrolysis strategy of BP can realize a dramatically prolonged protective effect. As a result, these multiple merits endow BP modified separator to achieve improved stripping/plating stability toward Zn anode with more than ten times lifespan enhancement in Zn||Zn symmetrical cell. More encouragingly, when coupled with a V2 O5 ·nH2 O cathode with ultra-high loadings (34.1 and 28.7 mg cm-2 ), the cumulative capacities are remarkably promoted for both coin and pouch cells.
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Affiliation(s)
- Hao Cheng
- State Key Laboratory of Chemical EngineeringInstitute of Pharmaceutical EngineeringCollege of Chemical and Biological EngineeringZhejiang UniversityHangzhou310027P.R. China
- ZJU‐Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou311215P.R. China
- Institute of WenzhouZhejiang UniversityWenzhou325006P.R. China
| | - Shichao Zhang
- State Key Laboratory of Chemical EngineeringInstitute of Pharmaceutical EngineeringCollege of Chemical and Biological EngineeringZhejiang UniversityHangzhou310027P.R. China
| | - Wenxuan Guo
- Department of PhysicsZhejiang Province Key Laboratory of Quantum Technology, and Device & State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou310027P.R. China
| | - Qian Wu
- State Key Laboratory of Chemical EngineeringInstitute of Pharmaceutical EngineeringCollege of Chemical and Biological EngineeringZhejiang UniversityHangzhou310027P.R. China
- ZJU‐Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou311215P.R. China
| | - Zeyu Shen
- State Key Laboratory of Chemical EngineeringInstitute of Pharmaceutical EngineeringCollege of Chemical and Biological EngineeringZhejiang UniversityHangzhou310027P.R. China
- ZJU‐Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou311215P.R. China
| | - Linlin Wang
- ZJU‐Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou311215P.R. China
| | - Wei Zhong
- State Key Laboratory of Chemical EngineeringInstitute of Pharmaceutical EngineeringCollege of Chemical and Biological EngineeringZhejiang UniversityHangzhou310027P.R. China
- Institute of WenzhouZhejiang UniversityWenzhou325006P.R. China
| | - Di Li
- State Key Laboratory of Chemical EngineeringInstitute of Pharmaceutical EngineeringCollege of Chemical and Biological EngineeringZhejiang UniversityHangzhou310027P.R. China
- ZJU‐Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou311215P.R. China
| | - Bing Zhang
- State Key Laboratory of Chemical EngineeringInstitute of Pharmaceutical EngineeringCollege of Chemical and Biological EngineeringZhejiang UniversityHangzhou310027P.R. China
- ZJU‐Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou311215P.R. China
| | - Chengwu Liu
- Department of Chemical EngineeringShanghai Jiao Tong UniversityShanghai200240P.R. China
| | - Yewu Wang
- Department of PhysicsZhejiang Province Key Laboratory of Quantum Technology, and Device & State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou310027P.R. China
| | - Yingying Lu
- State Key Laboratory of Chemical EngineeringInstitute of Pharmaceutical EngineeringCollege of Chemical and Biological EngineeringZhejiang UniversityHangzhou310027P.R. China
- ZJU‐Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou311215P.R. China
- Institute of WenzhouZhejiang UniversityWenzhou325006P.R. China
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13
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Wang Y, Wang W, Lu X, Chen T, Wang Y, Wen Y, Hu J, Song J, Wang X. Novel RNA genosensor based on highly stable gold nanoparticles decorated phosphorene nanohybrid with graphene for highly sensitive and low-cost electrochemical detection of coconut cadang-cadang viroid. Mikrochim Acta 2023; 191:52. [PMID: 38147136 DOI: 10.1007/s00604-023-06130-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Accepted: 11/28/2023] [Indexed: 12/27/2023]
Abstract
Coconut cadang-cadang viroid (CCCVd) is an infectious single-stranded RNA (ssRNA) pathogen, which leads directly to the death of a large number of coconut palm trees and heavy economic loss to coconut farmers. Herein, a novel electrochemical impedance RNA genosensor is presented based on highly stable gold nanoparticles (AuNPs) decorated phosphorene (BP) nanohybrid with graphene (Gr) for highly sensitive, low-cost, and label-free detection of CCCVd. BP-AuNPs are environmentally friendly prepared by ultrasonic-assisted liquid-phase exfoliation of black phosphorus, accompanying direct reduction of chloroauric acid. Gr/BP-AuNPs are facilely prepared by the in situ growth of AuNPs onto the BP surface and its nanohybrid with Gr to improve environmental stability of BP. Gr/BP-AuNP-based RNA genosensor is fabricated by immobilizing the thiol-functionalized single-stranded DNA (ssDNA) oligonucleotide probe onto the surface of Gr/BP-AuNP-modified glassy carbon electrode via gold-thiol interactions, which served as an electrochemical genosensing platform for the label-free impedance detection of CCCVd by hybridization between the functionalized ssDNA probe and the complementary CCCVd ssRNA sequence in a wide linear range from 1.0 × 10-11 to 1.0 × 10-7 M with a low limit of detection of 2.8 × 10-12 M. This work supplies an experimental support and theoretical direction for the fabrication of RNA biosensors based on graphene-like materials and potential application for a specific diagnosis of plant RNA viral disease in Arecaceae planting industry.
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Affiliation(s)
- Yutang Wang
- Department of Biochemistry and Molecular Biology, College of Bioscience and Bioengineering, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China
- Institute of Functional Materials and Agricultural Applied Chemistry, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China
| | - Wenqi Wang
- Institute of Functional Materials and Agricultural Applied Chemistry, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China
| | - Xinyu Lu
- Institute of Functional Materials and Agricultural Applied Chemistry, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China
| | - Tao Chen
- Institute of Functional Materials and Agricultural Applied Chemistry, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China
| | - Yihua Wang
- Department of Biochemistry and Molecular Biology, College of Bioscience and Bioengineering, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China.
| | - Yangping Wen
- Institute of Functional Materials and Agricultural Applied Chemistry, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China.
- Key Laboratory of Crop Physiology, Ecology and Genetic Breeding, Ministry of Education, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China.
| | - Jiaqi Hu
- Institute of Functional Materials and Agricultural Applied Chemistry, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China
| | - Jianbo Song
- Department of Biochemistry and Molecular Biology, College of Bioscience and Bioengineering, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China
| | - Xiaoqiang Wang
- Institute of Functional Materials and Agricultural Applied Chemistry, Jiangxi Agricultural University, Nanchang, 330045, People's Republic of China
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14
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Yan ZY, Hou Z, Xue KH, Tian H, Lu T, Xue J, Wu F, Zhao R, Shao M, Yan J, Yan A, Wang Z, Shen P, Zhao M, Miao X, Lin Z, Liu H, Yang Y, Ren TL. Landauer-QFLPS Model for Mixed Schottky-Ohmic Contact Two-Dimensional Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303734. [PMID: 37814361 DOI: 10.1002/advs.202303734] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 08/22/2023] [Indexed: 10/11/2023]
Abstract
Two-dimensional material-based field-effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, before electronic design automation (EDA) for 2DM-FETs can be achieved, it remains necessary to determine how to incorporate contact transports into model. Reported methods compromise between physical intelligibility and model compactness due to the heterojunction nature. To address this, quasi-Fermi-level phase space theory (QFLPS) is generalized to incorporate contact transports using the Landauer formula. It turns out that the Landauer-QFLPS model effectively overcomes the issue of concern. The proposed new formula can describe 2DM-FETs with Schottky or Ohmic contacts with superior accuracy and efficiency over previous methods, especially when describing non-monotonic drain conductance characteristics. A three-bit threshold inverter quantizer (TIQ) circuit is fabricated using ambipolar black phosphorus and it is demonstrated that the model accurately predicts circuit performance. The model could be very effective and valuable in the development of 2DM-FET-based integrated circuits.
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Affiliation(s)
- Zhao-Yi Yan
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zhan Hou
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Kan-Hao Xue
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - He Tian
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian Lu
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Junying Xue
- Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Fan Wu
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Ruiting Zhao
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Minghao Shao
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Jianlan Yan
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Anzhi Yan
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zhenze Wang
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Penghui Shen
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Mingyue Zhao
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Zhaoyang Lin
- Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Houfang Liu
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Yi Yang
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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15
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Yuan Y, Peng X, Weng X, He J, Liao C, Wang Y, Liu L, Zeng S, Song J, Qu J. Two-dimensional nanomaterials as enhanced surface plasmon resonance sensing platforms: Design perspectives and illustrative applications. Biosens Bioelectron 2023; 241:115672. [PMID: 37716156 DOI: 10.1016/j.bios.2023.115672] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 08/16/2023] [Accepted: 09/04/2023] [Indexed: 09/18/2023]
Abstract
Both increasing demand for ultrasensitive detection in the scientific community and significant new breakthroughs in materials science field have inspired and promoted the development of new-generation multifunctional plasmonic sensing platforms by adopting promising plasmonic nanomaterials. Recently, high-quality surface plasmon resonance (SPR) sensors, assisted by two dimensional (2D) nanomaterials including 2D van der Waals (vdWs) materials (such as graphene/graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, antimonene, tellurene, MXenes, and metal oxides), 2D metal-organic frameworks (MOFs), 2D hyperbolic metamaterials (HMMs), and 2D optical metasurfaces, have emerged as a class of novel plasmonic sensing platforms that show unprecedented detection sensitivity and impressive performance. This review of recent progress in 2D nanomaterials-enhanced SPR platforms will highlight their compelling plasmonic enhancement features, working mechanisms, and design methodologies, as well as discuss illustrative practical applications. Hence, it is of great importance to describe the latest research progress in 2D nanomaterials-enhanced SPR sensing cases. In this review, we present some concepts of SPR enhanced by 2D nanomaterials, including the basic principles of SPR, signal modulation approaches, and working enhancement mechanisms for various 2D materials-enhanced SPR systems. In addition, we also demonstrate a detailed categorization of 2D nanomaterials-enhanced SPR sensing platforms and comment on their ability to realize ultrasensitive SPR detection. Finally, we conclude with future perspectives for exploring a new generation of 2D nanomaterials-based sensors.
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Affiliation(s)
- Yufeng Yuan
- School of Electronic Engineering and Intelligentization, Dongguan University of Technology, Dongguan, Guangdong, 523808, China; State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Xiao Peng
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Xiaoyu Weng
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Jun He
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Changrui Liao
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Yiping Wang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Liwei Liu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Shuwen Zeng
- Light, Nanomaterials & Nanotechnologies (L2n), CNRS-EMR 7004, Université de Technologie de Troyes, 10000, Troyes, France.
| | - Jun Song
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Junle Qu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
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16
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Lien MR, Wang N, Guadagnini S, Wu J, Soibel A, Gunapala SD, Wang H, Povinelli ML. Black Phosphorus Molybdenum Disulfide Midwave Infrared Photodiodes with Broadband Absorption-Increasing Metasurfaces. NANO LETTERS 2023; 23:9980-9987. [PMID: 37883580 PMCID: PMC10636840 DOI: 10.1021/acs.nanolett.3c03076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Revised: 10/20/2023] [Accepted: 10/24/2023] [Indexed: 10/28/2023]
Abstract
Black phosphorus (BP) has been established as a promising material for room temperature midwave infrared (MWIR) photodetectors. However, many of its attractive optoelectronic properties are often observable only at smaller film thicknesses, which inhibits photodetector absorption and performance. In this work, we show that metasurface gratings increase the absorption of BP-MoS2 heterojunction photodiodes over a broad range of wavelengths in the MWIR. We designed, fabricated, and characterized metasurface gratings that increase absorption at selected wavelengths or broad spectral ranges. We evaluated the broadband metasurfaces by measuring the room temperature responsivity and specific detectivity of BP-MoS2 photodiodes at multiple MWIR wavelengths. Our results show that broadband metasurface gratings are a scalable approach for boosting the performance of BP photodiodes over large spectral ranges.
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Affiliation(s)
- Max R. Lien
- Ming
Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Nan Wang
- Mork
Family Department of Chemical Engineering & Materials Science, University of Southern California, Los Angeles, California 90089, United States
| | - Silvia Guadagnini
- Department
of Physics & Astronomy, University of
Southern California, Los Angeles, California 90089, United States
| | - Jiangbin Wu
- Ming
Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Alexander Soibel
- Jet
Propulsion Laboratory, California Institute
of Technology, 4800 Oak
Grove Dr., Pasadena, California 91030, United States
| | - Sarath D. Gunapala
- Jet
Propulsion Laboratory, California Institute
of Technology, 4800 Oak
Grove Dr., Pasadena, California 91030, United States
| | - Han Wang
- Ming
Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
- Mork
Family Department of Chemical Engineering & Materials Science, University of Southern California, Los Angeles, California 90089, United States
| | - Michelle L. Povinelli
- Ming
Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
- Department
of Physics & Astronomy, University of
Southern California, Los Angeles, California 90089, United States
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17
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Fang L, Xie Y, Xu F, Wang M, Wang G. Nitrogen doped CoP on ammoniated black phosphorus nanosheets enabling highly efficient hydrogen evolution electrocatalysis. Dalton Trans 2023; 52:12436-12443. [PMID: 37594404 DOI: 10.1039/d3dt01573d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/19/2023]
Abstract
Developing a rational and cost-effective approach for designing highly-efficient and sustainable electrocatalysts is essential for clean and renewable hydrogen energy. Herein, we report nitrogen-doped CoP on two-dimensional ammoniated black phosphorus (BP) nanosheets (N-CoP/NH2-BP) as novel and highly-active heterostructure electrocatalysts for the hydrogen evolution reaction (HER). Using the reactive defects on the BP nanosheets as the original sites under NH3 gas, N-doped CoP nanocrystals were grown on the surface of the BP nanosheets that were functionalized with NH2 groups at their edge. The N-CoP/NH2-BP heterostructure exhibits low overpotentials of 90 and 246 mV at 10 and 200 mA cm-2, respectively, in an alkaline electrolyte. The excellent HER activity should be attributed to the synergistic effect between N-doped CoP and NH2-functionalized BP, in which NH2-BP, with its high electron mobility and hydrophilicity, accelerates the charge transfer and offers more active sites, moreover, N-doped CoP modulates the electronic structure of CoP for enhanced HER activity. This work not only provides a novel and effective electrocatalyst, but also opens up a straightforward strategy for the design of phosphorene-based electrocatalysts for highly efficient hydrogen evolution and beyond.
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Affiliation(s)
- Liang Fang
- Collaborative Innovation Center of Henan Province for Energy-Saving Building Materials, Xinyang Normal University, Xinyang, Henan, 464000, China.
| | - Yanping Xie
- Analysis & Testing Center, Xinyang Normal University, Xinyang, Henan, 464000, China
| | - Feiya Xu
- Analysis & Testing Center, Xinyang Normal University, Xinyang, Henan, 464000, China
| | - Miao Wang
- College of Chemistry and Chemical Engineering, Xinyang Normal University, Xinyang 464000, China
| | - Gang Wang
- Collaborative Innovation Center of Henan Province for Energy-Saving Building Materials, Xinyang Normal University, Xinyang, Henan, 464000, China.
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18
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He Z, Du J, Miao Y, Li Y. Recent Developments of Inorganic Nanosensitizers for Sonodynamic Therapy. Adv Healthc Mater 2023; 12:e2300234. [PMID: 37070721 DOI: 10.1002/adhm.202300234] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2023] [Revised: 04/07/2023] [Indexed: 04/19/2023]
Abstract
As a noninvasive treatment, sonodynamic therapy (SDT) has been widely used in the treatment of tumors because of its ability to penetrate deep tissue with few side effects. As the key factor of SDT, it is meaningful to design and synthesize efficient sonosensitizers. Compared with organic sonosensitizers, inorganic sonosensitizers can be easily excited by ultrasound. In addition, inorganic sonosensitizers with stable properties, good dispersion, and long blood circulation time, have great development potential in SDT. This review summarizes possible mechanisms of SDT (sonoexcitation and ultrasonic cavitation) in detail. Based on these mechanisms, the design and synthesis of inorganic nanosonosensitizers can be divided into three categories: traditional inorganic semiconductor sonosensitizers, enhanced inorganic semiconductor sonosensitizers, and cavitation-enhanced sonosensitizers. Subsequently, the current efficient construction methods of sonosensitizers are summarized including accelerated semiconductor charge separation and enhanced production of reactive oxygen species through ultrasonic cavitation. Furthermore, the advantages and disadvantages of different inorganic sonosensitizers and detailed strategies are systematically discussed on how to enhance SDT. Hopefully, this review could provide new insights into the design and synthesis of efficient inorganic nano-sonosensitizers for SDT.
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Affiliation(s)
- Zongyan He
- School of Materials and Chemistry & Institute of Bismuth and Rhenium, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Jun Du
- School of Materials and Chemistry & Institute of Bismuth and Rhenium, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Yuqing Miao
- School of Materials and Chemistry & Institute of Bismuth and Rhenium, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Yuhao Li
- School of Materials and Chemistry & Institute of Bismuth and Rhenium, University of Shanghai for Science and Technology, Shanghai, 200093, China
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19
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Zhang Z, Dong X, Chen J, Liu Z, Gao Z, Chang X, Du Y, Jia C, Fu H, Luo F, Wu J. Transferred Polymer-Encapsulated Metal Electrodes for Electrical Transport Measurements on Ultrathin Air-Sensitive Crystals. SMALL METHODS 2023; 7:e2300177. [PMID: 37287373 DOI: 10.1002/smtd.202300177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Revised: 05/29/2023] [Indexed: 06/09/2023]
Abstract
Owing to rapid property degradation after ambient exposure and incompatibility with conventional device fabrication process, electrical transport measurements on air-sensitive 2D materials have always been a big issue. Here, for the first time, a facile one-step polymer-encapsulated electrode transfer (PEET) method applicable for fragile 2D materials is developed, which showed great advantages of damage-free electrodes patterning and in situ polymer encapsulation preventing from H2 O/O2 exposure during the whole electrical measurements process. The ultrathin SmTe2 metals grown by chemical vapor deposition (CVD) are chosen as the prototypical air-sensitive 2D crystals for their poor air-stability, which will become highly insulating when fabricated by conventional lithographic techniques. Nevertheless, the intrinsic electrical properties of CVD-grown SmTe2 nanosheets can be readily investigated by the PEET method instead, showing ultralow contact resistance and high signal/noise ratio. The PEET method can be applicable to other fragile ultrathin magnetic materials, such as (Mn,Cr)Te, to investigate their intrinsic electrical/magnetic properties.
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Affiliation(s)
- Zheshan Zhang
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Xinyue Dong
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Jiabiao Chen
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Zhaochao Liu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Zhansheng Gao
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Xinyue Chang
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Yaping Du
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Chuancheng Jia
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Huixia Fu
- Center of Quantum Materials and Devices & College of Physics, Chongqing University, Chongqing, 401331, China
| | - Feng Luo
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Jinxiong Wu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
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20
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Li X, Shi F, Wang L, Zhang S, Yan L, Zhang X, Sun W. Electrochemical Biosensor Based on Horseradish Peroxidase and Black Phosphorene Quantum Dot Modified Electrode. Molecules 2023; 28:6151. [PMID: 37630403 PMCID: PMC10459736 DOI: 10.3390/molecules28166151] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Revised: 08/09/2023] [Accepted: 08/14/2023] [Indexed: 08/27/2023] Open
Abstract
Black phosphorene quantum dots (BPQDs) were prepared by ultrasonic-assisted liquid-phase exfoliation and centrifugation with morphologies proved by TEM results. Furthermore, an electrochemical enzyme sensor was prepared by co-modification of BPQDs with horseradish peroxidase (HRP) on the surface of a carbon ionic liquid electrode (CILE) for the first time. The direct electrochemical behavior of HRP was studied with a pair of well-shaped voltammetric peaks that appeared, indicating that the existence of BPQDs was beneficial to accelerate the electron transfer rate between HRP and the electrode surface. This was due to the excellent properties of BPQDs, such as small particle size, high interfacial reaction activity, fast conductivity, and good biocompatibility. The presence of BPQDs on the electrode surface provided a fast channel for direct electron transfer of HRP. Therefore, the constructed electrochemical HRP biosensor was firstly used to investigate the electrocatalytic behavior of trichloroacetic acid (TCA) and potassium bromate (KBrO3), and the wide linear detection ranges of TCA and KBrO3 were 4.0-600.0 mmol/L and 2.0-57.0 mmol/L, respectively. The modified electrode was applied to the actual samples detection with satisfactory results.
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Affiliation(s)
- Xiaoqing Li
- Key Laboratory of Functional Materials and Photoelectrochemistry of Haikou, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Chemistry and Chemical Engineering, Hainan Normal University, Haikou 571158, China; (X.L.); (F.S.); (L.W.); (S.Z.); (L.Y.); (X.Z.)
- College of Health Sciences, Shandong University of Traditional Chinese Medicine, Jinan 250355, China
| | - Fan Shi
- Key Laboratory of Functional Materials and Photoelectrochemistry of Haikou, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Chemistry and Chemical Engineering, Hainan Normal University, Haikou 571158, China; (X.L.); (F.S.); (L.W.); (S.Z.); (L.Y.); (X.Z.)
| | - Lisi Wang
- Key Laboratory of Functional Materials and Photoelectrochemistry of Haikou, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Chemistry and Chemical Engineering, Hainan Normal University, Haikou 571158, China; (X.L.); (F.S.); (L.W.); (S.Z.); (L.Y.); (X.Z.)
| | - Siyue Zhang
- Key Laboratory of Functional Materials and Photoelectrochemistry of Haikou, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Chemistry and Chemical Engineering, Hainan Normal University, Haikou 571158, China; (X.L.); (F.S.); (L.W.); (S.Z.); (L.Y.); (X.Z.)
| | - Lijun Yan
- Key Laboratory of Functional Materials and Photoelectrochemistry of Haikou, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Chemistry and Chemical Engineering, Hainan Normal University, Haikou 571158, China; (X.L.); (F.S.); (L.W.); (S.Z.); (L.Y.); (X.Z.)
| | - Xiaoping Zhang
- Key Laboratory of Functional Materials and Photoelectrochemistry of Haikou, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Chemistry and Chemical Engineering, Hainan Normal University, Haikou 571158, China; (X.L.); (F.S.); (L.W.); (S.Z.); (L.Y.); (X.Z.)
| | - Wei Sun
- Key Laboratory of Functional Materials and Photoelectrochemistry of Haikou, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Chemistry and Chemical Engineering, Hainan Normal University, Haikou 571158, China; (X.L.); (F.S.); (L.W.); (S.Z.); (L.Y.); (X.Z.)
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21
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Zhang M, Yang L, Wu X, Wang J. Black Phosphorus for Photonic Integrated Circuits. RESEARCH (WASHINGTON, D.C.) 2023; 6:0206. [PMID: 37593339 PMCID: PMC10430873 DOI: 10.34133/research.0206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 07/19/2023] [Indexed: 08/19/2023]
Abstract
Black phosphorus gives several advantages and complementarities over other two-dimensional materials. It has drawn extensive interest owing to its relatively high carrier mobility, wide tunable bandgap, and in-plane anisotropy in recent years. This manuscript briefly reviews the structure and physical properties of black phosphorus and targets on black phosphorus for photonic integrated circuits. Some of the applications are discussed including photodetection, optical modulation, light emission, and polarization conversion. Corresponding recent progresses, associated challenges, and future potentials are covered.
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Affiliation(s)
| | | | | | - Junjia Wang
- National Research Center for Optical Sensors/communications Integrated Networks, School of Electronic Science and Engineering,
Southeast University, 2 Sipailou, Nanjing 210096, China
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22
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Yang Y, Dong R, Cheng H, Wang L, Tu J, Zhang S, Zhao S, Zhang B, Pan H, Lu Y. 2D Layered Materials for Fast-Charging Lithium-Ion Battery Anodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301574. [PMID: 37093221 DOI: 10.1002/smll.202301574] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Indexed: 05/03/2023]
Abstract
The development of electric vehicles has received worldwide attention in the background of reducing carbon emissions, wherein lithium-ion batteries (LIBs) become the primary energy supply systems. However, commercial graphite-based anodes in LIBs currently confront significant difficulty in enduring ultrahigh power input due to the slow Li+ transport rate and the low intercalation potential. This will, in turn, cause dramatic capacity decay and lithium plating. The 2D layered materials (2DLMs) recently emerge as new fast-charging anodes and hold huge promise for resolving the problems owing to the synergistic effect of a lower Li+ diffusion barrier, a proper Li+ intercalation potential, and a higher theoretical specific capacity with using them. In this review, the background and fundamentals of fast-charging for LIBs are first introduced. Then the research progress recently made for 2DLMs used for fast-charging anodes are elaborated and discussed. Some emerging research directions in this field with a short outlook on future studies are further discussed.
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Affiliation(s)
- Yaxiong Yang
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an, 710021, China
| | - Ruige Dong
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Silicon Materials, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310058, China
| | - Hao Cheng
- State Key Laboratory of Chemical Engineering, Institute of Pharmaceutical Engineering, College of Chemical and Biological Engineering, Zhejiang University, Hangzhou, 310027, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, 311215, China
| | - Linlin Wang
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, 311215, China
| | - Jibing Tu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, 311215, China
| | - Shichao Zhang
- State Key Laboratory of Chemical Engineering, Institute of Pharmaceutical Engineering, College of Chemical and Biological Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Sihan Zhao
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Silicon Materials, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310058, China
| | - Bing Zhang
- State Key Laboratory of Chemical Engineering, Institute of Pharmaceutical Engineering, College of Chemical and Biological Engineering, Zhejiang University, Hangzhou, 310027, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, 311215, China
| | - Hongge Pan
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an, 710021, China
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yingying Lu
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an, 710021, China
- State Key Laboratory of Chemical Engineering, Institute of Pharmaceutical Engineering, College of Chemical and Biological Engineering, Zhejiang University, Hangzhou, 310027, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, 311215, China
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23
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Zhang J, Duan L, Zhou N, Zhang L, Shang C, Xu H, Yang R, Wang X, Li X. Modulating the Function of GeAs/ReS 2 van der Waals Heterojunction with its Potential Application for Short-Wave Infrared and Polarization-Sensitive Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303335. [PMID: 37154239 DOI: 10.1002/smll.202303335] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Indexed: 05/10/2023]
Abstract
Van der Waals heterojunction (vdWs) of 2D materials with integrated or extended superior characteristics, opening up new opportunities in functional electronic and optoelectric device applications. Exploring methods to achieve multifunctional vdWs heterojunction devices is one of the most promising prospects in this area. Herein, a diverse function of forward rectifying diode, Zener tunneling diode, and backward rectifying diodes are realized in GeAs/ReS2 heterojunction by modulating the doping level of GeAs. The tunneling diode presents an interesting trend forward negative differential resistance (NDR) behavior which may facilitate the application of multi-value logic. More importantly, the GeAs/ReS2 forward rectifying diode exhibits highly sensitive photodetection in the wide-spectrum range up to 1550 nm corresponding to a short-wave infrared (SWIR) region. In addition, as two strong anisotropic 2D materials of GeAs and ReS2 , the heterojunction exhibits strong polarization-sensitive photodetection behavior with a dichroic photocurrent ratio of 1.7. This work provides an effective strategy to achieve multifunctional 2D vdW heterojunction devices and develops more possibilities to broaden their functionalities and applications.
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Affiliation(s)
- Jianbin Zhang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Linfan Duan
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Nan Zhou
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Lihui Zhang
- Xi'an Thermal Power Research Institute Co., Ltd., Xi'an, 710054, P. R. China
| | - Conghui Shang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Rusen Yang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
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24
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Margot F, Lisi S, Cucchi I, Cappelli E, Hunter A, Gutiérrez-Lezama I, Ma K, von Rohr F, Berthod C, Petocchi F, Poncé S, Marzari N, Gibertini M, Tamai A, Morpurgo AF, Baumberger F. Electronic Structure of Few-Layer Black Phosphorus from μ-ARPES. NANO LETTERS 2023; 23:6433-6439. [PMID: 37460109 PMCID: PMC10375583 DOI: 10.1021/acs.nanolett.3c01226] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based microfocus angle resolved photoemission (μ-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters, which provide an accurate description of the electronic structure for all thicknesses.
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Affiliation(s)
- Florian Margot
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Simone Lisi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Irène Cucchi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Edoardo Cappelli
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Andrew Hunter
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - KeYuan Ma
- Department of Chemistry, University of Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
| | - Fabian von Rohr
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Christophe Berthod
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Francesco Petocchi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Samuel Poncé
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, BE-1348 Louvain-la-Neuve, Belgium
| | - Nicola Marzari
- Laboratory of Theory and Simulation of Materials, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Marco Gibertini
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche, University of Modena and Reggio Emilia, 41125 Modena, Italy
| | - Anna Tamai
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Felix Baumberger
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen, Switzerland
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25
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Xie X, Ding J, Wu B, Zheng H, Li S, Wang CT, He J, Liu Z, Wang JT, Duan JA, Liu Y. Observation of optical anisotropy and a linear dichroism transition in layered silicon phosphide. NANOSCALE 2023. [PMID: 37455620 DOI: 10.1039/d3nr01765f] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
The investigation of in-plane two-dimensional (2D) anisotropic materials has garnered significant attention due to their exceptional electronic, optical, and mechanical characteristics. The anisotropic optical properties and angle-dependent photodetectors based on 2D anisotropic materials have been extensively studied. However, novel in-plane anisotropic materials still need to be explored to satisfy for distinct environments and devices. Here, we report the remarkable anisotropic behavior of excitons and demonstrate a unique linear-dichroism transition of absorption between ultraviolet and visible light in layered silicon phosphide (SiP) through the analysis of polarization photoluminescence (PL) and absorbance spectra. Its high absorption linear dichroism ratio of 1.16 at 388 nm, 1.15 at 532 nm, and 1.19 at 733 nm is revealed, suggesting the brilliant non-isotropic responses. The robust periodic variation of the A1 and A2 Raman modes in 2D SiP materials allows for the determination of their crystal orientation. Furthermore, the presence of indirect excitons with phonon sidebands in the temperature-dependent PL spectra exhibits non-monotonic energy shifts with increasing temperature, which is attributed to an enhanced electron-phonon interaction and thermal expansion. Our findings provide valuable insights into the fundamental physical properties of layered SiP and offer guidelines for designing polarization-sensitive photodetectors and angle-dependent devices based on 2D anisotropic materials.
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Affiliation(s)
- Xing Xie
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Junnan Ding
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Biao Wu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Haihong Zheng
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Shaofei Li
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
| | - Chang-Tian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jun He
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, NSW 2006, Australia
- The University of Sydney Nano Institute, The University of Sydney, NSW 2006, Australia
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Ji-An Duan
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- Shenzhen Research Institute of Central South University, Shenzhen 518057, People's Republic of China
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26
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Xu N, Shi L, Pei X, Zhang W, Chen J, Han Z, Samorì P, Wang J, Wang P, Shi Y, Li S. Oxidation kinetics and non-Marcusian charge transfer in dimensionally confined semiconductors. Nat Commun 2023; 14:4074. [PMID: 37429836 DOI: 10.1038/s41467-023-39781-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2022] [Accepted: 06/27/2023] [Indexed: 07/12/2023] Open
Abstract
Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substances can be well described by the classical Marcus-Gerischer charge transfer theory, the realistic reaction character and mechanism in dimensionally confined systems remain unknown. Here, we report the multiparametric survey on the kinetics of lateral photooxidation in structurally identical WS2 and MoS2 monolayers, where electrochemical oxidation occurs at the atomically thin monolayer edges. The oxidation rate is correlated quantitatively with various crystallographic and environmental parameters, including the density of reactive sites, humidity, temperature, and illumination fluence. In particular, we observe distinctive reaction barriers of 1.4 and 0.9 eV for the two structurally identical semiconductors and uncover an unusual non-Marcusian charge transfer mechanism in these dimensionally confined monolayers due to the limit in reactant supplies. A scenario of band bending is proposed to explain the discrepancy in reaction barriers. These results add important knowledge into the fundamental electrochemical reaction theory in low-dimensional systems.
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Affiliation(s)
- Ning Xu
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Li Shi
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xudong Pei
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210023, China
| | - Weiyang Zhang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210023, China
| | - Jian Chen
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Zheng Han
- Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, China
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000, Strasbourg, France
| | - Jinlan Wang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China.
- Suzhou Laboratory, Suzhou, 215125, China.
| | - Peng Wang
- Department of Physics, University of Warwick, CV4 7AL, Coventry, UK.
| | - Yi Shi
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China.
| | - Songlin Li
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China.
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27
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Cicirello G, Wang M, Sam QP, Hart JL, Williams NL, Yin H, Cha JJ, Wang J. Two-Dimensional Violet Phosphorus P 11: A Large Band Gap Phosphorus Allotrope. J Am Chem Soc 2023; 145:8218-8230. [PMID: 36996286 DOI: 10.1021/jacs.3c01766] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/01/2023]
Abstract
The discovery of novel large band gap two-dimensional (2D) materials with good stability and high carrier mobility will innovate the next generation of electronics and optoelectronics. A new allotrope of 2D violet phosphorus P11 was synthesized via a salt flux method in the presence of bismuth. Millimeter-sized crystals of violet-P11 were collected after removing the salt flux with DI water. From single-crystal X-ray diffraction, the crystal structure of violet-P11 was determined to be in the monoclinic space group C2/c (no. 15) with unit cell parameters of a = 9.166(6) Å, b = 9.121(6) Å, c = 21.803(14)Å, β = 97.638(17)°, and a unit cell volume of 1807(2) Å3. The structure differences between violet-P11, violet-P21, and fibrous-P21 are discussed. The violet-P11 crystals can be mechanically exfoliated down to a few layers (∼6 nm). Photoluminescence and Raman measurements reveal the thickness-dependent nature of violet-P11, and exfoliated violet-P11 flakes were stable in ambient air for at least 1 h, exhibiting moderate ambient stability. The bulk violet-P11 crystals exhibit excellent stability, being stable in ambient air for many days. The optical band gap of violet-P11 bulk crystals is 2.0(1) eV measured by UV-Vis and electron energy-loss spectroscopy measurements, in agreement with density functional theory calculations which predict that violet-P11 is a direct band gap semiconductor with band gaps of 1.8 and 1.9 eV for bulk and monolayer, respectively, and with a high carrier mobility. This band gap is the largest among the known single-element 2D layered bulk crystals and thus attractive for various optoelectronic devices.
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Affiliation(s)
- Gary Cicirello
- Department of Chemistry and Biochemistry, Wichita State University, Wichita, Kansas 67260, United States
| | - Mengjing Wang
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, United States
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Quynh P Sam
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - James L Hart
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Natalie L Williams
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Huabing Yin
- Institute for Computational Materials Science, Joint Center for Theoretical Physics, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Judy J Cha
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, United States
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Jian Wang
- Department of Chemistry and Biochemistry, Wichita State University, Wichita, Kansas 67260, United States
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28
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Zhang J, Shang C, Dai X, Zhang Y, Zhu T, Zhou N, Xu H, Yang R, Li X. Effective Passivation of Anisotropic 2D GeAs via Graphene Encapsulation for Highly Stable Near-Infrared Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:13281-13289. [PMID: 36857585 DOI: 10.1021/acsami.2c20030] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Germanium arsenic (GeAs) as a promising two-dimensional (2D) semiconducting material has attracted extensive attention. The high carrier mobility and tunable bandgap of GeAs offer broad prospects in electronic and optoelectronic device-related applications. The unique intrinsic anisotropy arising from the low-symmetry structure can be applied in the design of new devices. However, the rapid degradation of mechanically exfoliated GeAs in the environment poses a challenge to its practical development in scalable devices. Here, an approach to stabilize the sensitive material without isolation from the ambient environment is reported. The graphene capping layer effectively suppresses environmental degradation, enabling the encapsulated GeAs photodetectors to maintain the key electronic properties for more than 3 months under ambient conditions. In addition, the regulation of the work function of graphene significantly improves the device performance. An improved responsivity of 965.07 A/W is 20 times higher than that of pure GeAs. This work provides opportunities for the practical application of GeAs and other environmentally sensitive 2D materials.
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Affiliation(s)
- Jianbin Zhang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou 710068, P. R. China
| | - Conghui Shang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
| | - Xinyue Dai
- School of Life Sciences, Shanghai University, Shanghai 200444, P. R. China
| | - Yao Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Tao Zhu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Nan Zhou
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou 710068, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Rusen Yang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou 710068, P. R. China
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29
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Degradation Studies of Air-Exposed Black Phosphorous and Black Arsenic Phosphorous. CHEMENGINEERING 2023. [DOI: 10.3390/chemengineering7020018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2023]
Abstract
This work investigates the effects of oxygen and humidity on black phosphorous (BP) and black arsenic phosphorous (AsxP1−x ) flakes using Raman spectroscopy and in situ electric transport measurements (four-probe resistance and thermoelectric power, TEP). The results show that the incorporation of arsenic into the lattice of BP renders it more stable, with the degradation times for BP, As0.2P0.8, and As0.4P0.6 being 4, 5, and 11 days, respectively. The P-P Raman peak intensities were determined to decrease with exposure to oxygen and moisture. The TEP measurements confirmed that both BP and AsxP1−x are p-type semiconductors with the TEP of As0.4P0.6 stabilizing more slowly than that of BP. In addition, the four-probe resistance of BP and AsxP1−x stabilized significantly faster when exposed to air after being degassed in a vacuum. This was attributed to the charge transfer between the oxygen redox potential of air and the Fermi energy (EF) of the semiconductors.
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30
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Li W, Fu W, Bai S, Huang H, He X, Ma W, Zhang H, Wang Y. Inspired electrocatalytic performance by unique amorphous PdCu nanoparticles on black phosphorus. Electrochim Acta 2023. [DOI: 10.1016/j.electacta.2023.142082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/25/2023]
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31
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Zhang G, Chen D, Lu J. A review on black-phosphorus-based composite heterojunction photocatalysts for energy and environmental applications. Sep Purif Technol 2023. [DOI: 10.1016/j.seppur.2022.122833] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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32
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Wu P, Huang M. Investigation of adsorption behaviors, and electronic and magnetic properties for small gas molecules adsorbed on Pt-doped arsenene by density functional calculations. RSC Adv 2023; 13:3807-3817. [PMID: 36756604 PMCID: PMC9890969 DOI: 10.1039/d2ra08028a] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/16/2022] [Accepted: 01/18/2023] [Indexed: 01/27/2023] Open
Abstract
Based on first-principles calculations, we compared the adsorption behaviors, electronic and magnetic properties of gas molecules (CO, NO, NO2, O2, NH3, H2O, H2 and N2) adsorbed on Pt-embedded arsenene and pristine arsenene. Our calculations show the interactions between molecules and arsenene can be enhanced by substitution of a Pt atom, suggesting the potential application of Pt-doped arsenene in gas sensing, especially for detecting NO2 gas due to the largest adsorption energy and charge transfer between NH3 and Pt-doped arsenene. Among all the molecules considered, CO, NO, NO2, O2 and NH3 molecules chemisorb on Pt-doped arsenene (these molecules physisorb on pristine arsenene) forming covalent Pt-C, Pt-N and Pt-O bonds, thus resulting in the elongation of C-O, N-O, O-O, N-H bonds in molecules. The magnetic moments of arsenene adsorbed with O2, NO, and NO2 decrease or diminish after Pt doping. Such variation on magnetism before and after Pt doping is ascribed to significant charge transfer and strong hybridization between gas molecules and the underlying Pt atoms, indicating the magnetic properties of arsenene can be tuned by molecular adsorption and Pt doping. These findings suggest Pt-doped arsenene has potential applications in spintronic devices, catalysts and gas sensors.
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Affiliation(s)
- Ping Wu
- School of Mathematics & Physics, Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory, Qingdao University of Science and Technology Qingdao 266061 China
| | - Min Huang
- Key Laboratory of Ferro and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics and Electronic Sciences, Hubei University Wuhan 430062 China
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33
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Chen B, Song L, Yuan Y, Liu X, Guo Z, Gu Y, Lou Z, Liu Y, Zhang C, Li C, Guo C. Chirality-Dependent Tumor Phototherapy Using Amino Acid-Engineered Chiral Phosphorene. ACS APPLIED MATERIALS & INTERFACES 2023; 15:651-661. [PMID: 36591814 DOI: 10.1021/acsami.2c19291] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Phosphorene, also known as black phosphorus nanosheet (BPNS), has been investigated as a nanoagent for tumor therapy. However, promoting its intracellular accumulation while preventing the cytoplasmic decomposition remains challenging. Herein, for the first time, we propose a chiral BPNS designed through surface engineering based on amino acids with high biocompatibility and an abundant source for application in chirality-dependent tumor phototherapy based on its intracellular metabolism. The advantage of using cysteine (Cys) over other amino acids was that its d, l, or dl-form could efficiently work as the chirality inducer to modify the BPNS through electrostatic interaction and prevent alterations in the intrinsic properties of the BPNS. In particular, d-Cys-BPNS displayed an approximately threefold cytotoxic effect on tumor cells compared with l-Cys-BPNS, demonstrating a chirality-dependent therapy behavior. d-Cys-BPNS not only promoted high intracellular content but also showed resistance to cytoplasmic decomposition. Cys-engineered BPNS also demonstrated chirality-dependent phototherapy effects on tumor-bearing mice, in proximity to the results in vitro. Chiral engineering is expected to open new avenues that could promote the use of BPNS in tumor phototherapy and boost chiral nanomedicine.
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Affiliation(s)
- Bo Chen
- Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, 99 Xuefu Road, Suzhou215009, Jiangsu, P. R. China
| | - Luping Song
- Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, 99 Xuefu Road, Suzhou215009, Jiangsu, P. R. China
| | - Ying Yuan
- Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, 99 Xuefu Road, Suzhou215009, Jiangsu, P. R. China
| | - Xin Liu
- The Third School of Clinical Medical, Affiliated Hospital of Integrated Traditional Chinese and Western Medicine, Nanjing University of Chinese Medicine, 100 Hongshan Road, Nanjing210028, P. R. China
| | - Zhanhang Guo
- State Key Laboratory of Bioelectronics, Jiangsu Key Laboratory for Biomaterials and Devices, School of Biological Sciences & Medical Engineering, Southeast University, Nanjing210096, P. R. China
| | - Yu Gu
- Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, 99 Xuefu Road, Suzhou215009, Jiangsu, P. R. China
| | - Zhichao Lou
- College of Materials Science and Engineering, Nanjing Forestry University, Nanjing210037, P. R. China
| | - Yang Liu
- State Key Laboratory of Bioelectronics, Jiangsu Key Laboratory for Biomaterials and Devices, School of Biological Sciences & Medical Engineering, Southeast University, Nanjing210096, P. R. China
| | - Chunmei Zhang
- Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, 99 Xuefu Road, Suzhou215009, Jiangsu, P. R. China
| | - Changming Li
- Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, 99 Xuefu Road, Suzhou215009, Jiangsu, P. R. China
| | - Chunxian Guo
- Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, 99 Xuefu Road, Suzhou215009, Jiangsu, P. R. China
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34
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Hydroxylate black-phosphorus promote the supercapacitive performances of polyaniline by 200%: From theoretical prediction to prototype device. Electrochim Acta 2022. [DOI: 10.1016/j.electacta.2022.141327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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35
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Liu CJ, Wan Y, Li LJ, Lin CP, Hou TH, Huang ZY, Hu VPH. 2D Materials-Based Static Random-Access Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107894. [PMID: 34932857 DOI: 10.1002/adma.202107894] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2021] [Revised: 12/14/2021] [Indexed: 06/14/2023]
Abstract
2D transition-metal dichalcogenide semiconductors, such as MoS2 and WSe2 , with adequate bandgaps are promising channel materials for ultrascaled logic transistors. This scalability study of 2D material (2DM)-based field-effect transistor (FET) and static random-access memory (SRAM) cells analyzing the impact of layer thickness reveals that the monolayer 2DM FET with superior electrostatics is beneficial for its ability to mitigate the read-write conflict in an SRAM cell at scaled technology nodes (1-2.1 nm). Moreover, the monolayer 2DM SRAM exhibits lower cell read access time and write time than the bilayer and trilayer 2DM SRAM cells at fixed leakage power. This simulation predicts that the optimization of 2DM SRAM designed with state-of-the-art contact resistance, mobility, and equivalent oxide thickness leads to excellent stability and operation speed at the 1-nm node. Applying the nanosheet (NS) gate-all-around (GAA) structure to 2DM further reduces cell read access time and write time and improves the area density of the SRAM cells, demonstrating a feasible scaling path beyond Si technology using 2DM NSFETs. In addition to the device design, the process challenges for 2DM NSFETs, including the cost-effective stacking of 2DM layers, formation of electrical contacts, suspended 2DM channels, and GAA structures, are also discussed.
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Affiliation(s)
- Chang-Ju Liu
- Department of Electrical Engineering, National Central University, Taoyuan, 320, Taiwan
| | - Yi Wan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, 9999077, Hong Kong
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, 9999077, Hong Kong
| | - Chih-Pin Lin
- Department of Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan
| | - Tuo-Hung Hou
- Department of Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan
| | - Zi-Yuan Huang
- Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 106, Taiwan
| | - Vita Pi-Ho Hu
- Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 106, Taiwan
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36
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Li Z, Song J, Yang H. Emerging low-dimensional black phosphorus: from physical-optical properties to biomedical applications. Sci China Chem 2022. [DOI: 10.1007/s11426-022-1355-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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37
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Lien MR, Wang N, Wu J, Soibel A, Gunapala SD, Wang H, Povinelli ML. Resonant Grating-Enhanced Black Phosphorus Mid-Wave Infrared Photodetector. NANO LETTERS 2022; 22:8704-8710. [PMID: 36287194 DOI: 10.1021/acs.nanolett.2c03469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Black phosphorus (BP) has emerged as a promising materials system for mid-wave infrared photodetection because of its moderate bandgap, high carrier mobility, substrate compatibility, and bandgap tunability. However, its uniquely tunable bandgap can only be taken advantage of with thin layer thicknesses, which ultimately limits the optical absorption of a BP photodetector. This work demonstrates an absorption-boosting resonant metal-insulator-metal (MIM) metasurface grating integrated with a thin-film BP photodetector. We designed and fabricated different MIM gratings and characterized their spectral properties. Then, we show that an MIM structure increased room temperature responsivity from 12 to 77 mA W-1 at 3.37 μm when integrated with a thin-film BP photodetector. Our results show that MIM structures simultaneously increase mid-wave infrared absorption and responsivity in a thin-film BP photodetector.
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Affiliation(s)
- Max R Lien
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Nan Wang
- Mork Family Department of Chemical Engineering & Materials Science, University of Southern California, Los Angeles, California 90089, United States
| | - Jiangbin Wu
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Alexander Soibel
- Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91030, United States
| | - Sarath D Gunapala
- Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91030, United States
| | - Han Wang
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
- Mork Family Department of Chemical Engineering & Materials Science, University of Southern California, Los Angeles, California 90089, United States
| | - Michelle L Povinelli
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
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38
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Abu UO, Akter S, Nepal B, Pitton KA, Guiton BS, Strachan DR, Sumanasekera G, Wang H, Jasinski JB. Ultra-Narrow Phosphorene Nanoribbons Produced by Facile Electrochemical Process. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203148. [PMID: 36068163 PMCID: PMC9631066 DOI: 10.1002/advs.202203148] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 08/16/2022] [Indexed: 06/15/2023]
Abstract
Phosphorene nanoribbons (PNRs) have inspired strong research interests to explore their exciting properties that are associated with the unique two-dimensional (2D) structure of phosphorene as well as the additional quantum confinement of the nanoribbon morphology, providing new materials strategy for electronic and optoelectronic applications. Despite several important properties of PNRs, the production of these structures with narrow widths is still a great challenge. Here, a facile and straightforward approach to synthesize PNRs via an electrochemical process that utilize the anisotropic Na+ diffusion barrier in black phosphorus (BP) along the [001] zigzag direction against the [100] armchair direction, is reported. The produced PNRs display widths of good uniformity (10.3 ± 3.8 nm) observed by high-resolution transmission electron microscopy, and the suppressed B2g vibrational mode from Raman spectroscopy results. More interestingly, when used in field-effect transistors, synthesized bundles exhibit the n-type behavior, which is dramatically different from bulk BP flakes which are p-type. This work provides insights into a new synthesis approach of PNRs with confined widths, paving the way toward the development of phosphorene and other highly anisotropic nanoribbon materials for high-quality electronic applications.
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Affiliation(s)
- Usman O. Abu
- Conn Center for Renewable Energy ResearchUniversity of LouisvilleLouisvilleKY40292USA
| | - Sharmin Akter
- Department of Mechanical EngineeringUniversity of LouisvilleLouisvilleKY40292USA
| | - Bimal Nepal
- Department of Physics and AstronomyUniversity of LouisvilleLouisvilleKY40292USA
| | - Kathryn A. Pitton
- Department of ChemistryUniversity of Kentucky125 Chemistry–Physics BuildingLexingtonKY40506‐0055USA
| | - Beth S. Guiton
- Department of ChemistryUniversity of Kentucky125 Chemistry–Physics BuildingLexingtonKY40506‐0055USA
| | - Douglas R. Strachan
- Department of Physics and AstronomyUniversity of Kentucky177 Chemistry–Physics BuildingLexingtonKY40506‐0055USA
| | - Gamini Sumanasekera
- Department of Physics and AstronomyUniversity of LouisvilleLouisvilleKY40292USA
| | - Hui Wang
- Department of Mechanical EngineeringUniversity of LouisvilleLouisvilleKY40292USA
| | - Jacek B. Jasinski
- Conn Center for Renewable Energy ResearchUniversity of LouisvilleLouisvilleKY40292USA
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Yu Y, Xiong T, Guo Z, Hou S, Yang J, Liu YY, Gu H, Wei Z. Wide-spectrum polarization-sensitive and fast-response photodetector based on 2D group IV-VI semiconductor tin selenide. FUNDAMENTAL RESEARCH 2022; 2:985-992. [PMID: 38933380 PMCID: PMC11197658 DOI: 10.1016/j.fmre.2022.02.008] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 10/18/2022] Open
Abstract
Tin selenide (SnSe) has attracted considerable interest recently on account of its low-symmetry lattice structure, great compatibility with key semiconductor technology, and remarkable electrical and optical performance. SnSe-based polarization-sensitive photodetectors show promising application prospects because of their fast response and excellent photoelectric performance. Here, an in-plane anisotropic SnSe nanosheet was synthesized and reported in detail by applying angle-resolved polarized Raman spectroscopy (ARPRS), polarization-resolved optical microscopy(PROM), angle-resolved optical absorption spectroscopy (AROAS), and other crystal structure characterization methods. Moreover, SnSe crystals exhibit superior polarization detection performance with a high anisotropic photocurrent ratio (2.31 at 1064 nm) due to the structure formed by the Van der Waals superposition of covalently bonded atomic layers. Furthermore, SnSe-based photodetectors have high responsivity (9.27 A/W), high detectivity (4.08 × 1010 Jones), and fast response (in the order of nanoseconds). These results suggest a new method for fabricating 2D fast-response polarization-sensitive photodetectors in the future.
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Affiliation(s)
- Yali Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tao Xiong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhengfeng Guo
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Shijun Hou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Honggang Gu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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40
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Liu Z, Lai X, Zhou Y, Deng F, Song J, Yang Z, Peng C, Ding F, Zhao F, Hu Z, Liang Y. Enhancing the anti-oxidation stability of vapor-crystallized arsenic crystals via introducing iodine. JOURNAL OF HAZARDOUS MATERIALS 2022; 439:129573. [PMID: 35863226 DOI: 10.1016/j.jhazmat.2022.129573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2022] [Revised: 06/06/2022] [Accepted: 07/08/2022] [Indexed: 06/15/2023]
Abstract
The oxidation of arsenic restricts its application in high-performance electronic devices and functional materials. Herein, a removable iodine-regulation method was proposed for the first time to enhance the anti-oxidation behavior of arsenic. In a gradient of 500-650 ℃, the introduction of 0.6-5.0 at% iodine into arsenic vapor could regulate an arsenic crystal. The oxygen content on the regulated arsenic crystal surface was lowered below 2.5 at% after exposure to ambient conditions for 96 h, reducing over 90% compared with the control group. The residual iodine barrier, which was mainly in the As-I2 state, suppressed the long-term oxidation of arsenic. First-principles calculation suggested that the adsorbed I2 weakened the delocalization of lone-pair electrons and inhibited charge transfer from the arsenic surface. Iodine regulation stabilized arsenic surface, which preferred (003) or (012) facets. Their surface energies were 22.4 meV and 47.6 meV, respectively. The synergistic effect of surface stabilization and I2 passivation lowered the surface energy and continuously slowed the oxidation of arsenic. Therefore, iodine regulation comprehensively enhanced the anti-oxidation properties of arsenic. Moreover, heating at 200 ℃ left the arsenic surface iodine content below 0.1 at% with little variation in structure. The improved anti-oxidation property of arsenic preserves resources for further advanced applications.
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Affiliation(s)
- Zhenxing Liu
- School of Metallurgy and Environment, Central South University, Changsha 410083, China
| | - Xinting Lai
- School of Metallurgy and Environment, Central South University, Changsha 410083, China
| | - Yuan Zhou
- School of Metallurgy and Environment, Central South University, Changsha 410083, China
| | - Fangjie Deng
- School of Metallurgy and Environment, Central South University, Changsha 410083, China
| | - Jiaqi Song
- School of Metallurgy and Environment, Central South University, Changsha 410083, China
| | - Zhihui Yang
- School of Metallurgy and Environment, Central South University, Changsha 410083, China; Chinese National Engineering Research Center for Control & Treatment of Heavy Metal Pollution, Changsha 410083, China
| | - Cong Peng
- School of Metallurgy and Environment, Central South University, Changsha 410083, China; Chinese National Engineering Research Center for Control & Treatment of Heavy Metal Pollution, Changsha 410083, China
| | - Fenghua Ding
- Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan
| | - Feiping Zhao
- School of Metallurgy and Environment, Central South University, Changsha 410083, China; Chinese National Engineering Research Center for Control & Treatment of Heavy Metal Pollution, Changsha 410083, China
| | - Zhan Hu
- School of Metallurgy and Environment, Central South University, Changsha 410083, China
| | - Yanjie Liang
- School of Metallurgy and Environment, Central South University, Changsha 410083, China; Chinese National Engineering Research Center for Control & Treatment of Heavy Metal Pollution, Changsha 410083, China.
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41
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Duan Z, Liu D, Ye Z, Sun C, Wang Z, Chen K, Li Y, Huang H, Zeng X, Wang J, Sun R, Yu XF. Black Phosphorus/Carbon Nanoframes for Efficient Flexible All-Solid-State Supercapacitor. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3311. [PMID: 36234437 PMCID: PMC9565270 DOI: 10.3390/nano12193311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 09/16/2022] [Accepted: 09/19/2022] [Indexed: 06/16/2023]
Abstract
A flexible all-solid-state supercapacitor with fast charging speed and high power density is a promising high-performance energy storage and sensor device in photovoltaic systems. Two-dimensional black phosphorus (BP) is a prospective electrode nanomaterial, but it struggles to fully exert its properties limited by its self-stacking. Herein, by embedding carbon nanoparticles into the interlayer of BP microplates, the designed BP/carbon nanoframe (BP/C NF) forms a certain nano-gap on the substrate for promoting the orderly transport of charges. The corresponding supercapacitor BP/C SC has a capacity of 372 F g-1, which is higher than that constructed from BP microplates (32.6 F g-1). Moreover, the BP/C SC exhibits good stability with a ca. 90% of capacitance retentions after 10,000 repeated bending and long-term cycles. Thus, the proposed strategy of using BP/carbon nanoframes is feasible to develop exceptional flexible energy devices, and it can guide the design of relevant two-dimensional nanocomposites.
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Affiliation(s)
- Zunbin Duan
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Danni Liu
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Zhaoer Ye
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215125, China
| | - Caixia Sun
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
- Department of Hematology, Zhanjiang Central Hospital, Guangdong Medical University, Zhanjiang 524045, China
| | - Zikun Wang
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215125, China
| | - Kezhen Chen
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yang Li
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Hao Huang
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Xiaoliang Zeng
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Jiahong Wang
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Rong Sun
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Xue-Feng Yu
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
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42
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Li J, Li J. Synergistic Lubrication Effect between Oxidized Black Phosphorus and Oil Molecules Triggers Superlubricity. J Phys Chem Lett 2022; 13:8245-8253. [PMID: 36018294 DOI: 10.1021/acs.jpclett.2c02144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Oxidized black phosphorus (BP) has been demonstrated as a promising oil-based nanoadditive because of its superior friction-reducing capability. However, the synergistic lubrication effect between oxidized BP and oil at the molecular level dominating the friction properties remains unclear. In this Letter, the synergistic lubrication effect between oxidized BP and two typical oil molecules (nonane and nonanoic acid) was explored with an atomic force microscope. The superlubricity of oxidized BP with an ultralow friction coefficient of 0.006 was achieved in the nonanoic acid environment, exhibiting a 96% reduction compared with that in the nonane environment. There was a confined nonanoic acid layer in the contact zone with a tilt angle of 35° because of the hydrogen bonding interaction, contributing to the superlubricity. This observation sheds light on the exploration of the lubrication mechanism of oxidized BP as a nanoadditive in oil, which reveals the considerable implications for the design of high-performance lubrication system.
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Affiliation(s)
- Jianfeng Li
- State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
| | - Jinjin Li
- State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
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43
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Li G, Qi X, Wu J, Xu L, Wan X, Liu Y, Chen Y, Li Q. Ultrasensitive, label-free voltammetric determination of norfloxacin based on molecularly imprinted polymers and Au nanoparticle-functionalized black phosphorus nanosheet nanocomposite. JOURNAL OF HAZARDOUS MATERIALS 2022; 436:129107. [PMID: 35569369 DOI: 10.1016/j.jhazmat.2022.129107] [Citation(s) in RCA: 85] [Impact Index Per Article: 42.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2022] [Revised: 04/23/2022] [Accepted: 05/05/2022] [Indexed: 05/05/2023]
Abstract
Norfloxacin (NOR) is an antibiotic commonly used to treat humans and food-producing animals. Owing to NOR abuse, its residues are frequently found in animal-derived food products and the surrounding environment. Therefore, development of an efficient analytical technique for the selective determination of trace NOR is greatly significant for food safety and environmental protection. Here, we fabricated an ultrasensitive, label-free molecularly imprinted polymer (MIP) voltammetric sensor for the selective determination of NOR, based on an Au nanoparticle-functionalized black phosphorus nanosheet nanocomposite (BPNS-AuNP) covered by a polypyrrole-imprinted film. BPNS-AuNP nanocomposites were prepared via an in-situ one-step method without the use of reducing agents. The imprinted polypyrrole film was formed on the surface of the BPNS-AuNPs in the presence of NOR. The physical properties and electrochemical behavior of the MIP/BPNS-AuNPs were investigated using various characterization techniques, and the analytical parameters were optimized. We found that BPNS-AuNPs improve the ambient stability and electrocatalytic activity, providing a large surface area for locating a higher number of specific recognition sites. Consequently, the MIP/BPNS-AuNP/GCE showed excellent sensing performance toward NOR, with a wide linear response range (0.1 nM - 10 μM), an extremely low limit of detection (0.012 nM), and extraordinary selectivity. Moreover, the MIP/BPNS-AuNP/GCE was used to determine NOR in various experimental samples with satisfactory results.
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Affiliation(s)
- Guangli Li
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Science and Chemistry, Hunan University of Technology, Zhuzhou 412007, China.
| | - Xiaoman Qi
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Science and Chemistry, Hunan University of Technology, Zhuzhou 412007, China
| | - Jingtao Wu
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Science and Chemistry, Hunan University of Technology, Zhuzhou 412007, China
| | - Lijian Xu
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Science and Chemistry, Hunan University of Technology, Zhuzhou 412007, China
| | - Xuan Wan
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Science and Chemistry, Hunan University of Technology, Zhuzhou 412007, China
| | - Ying Liu
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Science and Chemistry, Hunan University of Technology, Zhuzhou 412007, China
| | - Yuwei Chen
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Science and Chemistry, Hunan University of Technology, Zhuzhou 412007, China
| | - Qing Li
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Science and Chemistry, Hunan University of Technology, Zhuzhou 412007, China; State Key Laboratory of Chemo/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China.
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44
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Chen J, Yang Y, Zhao S, Bi F, Song L, Liu N, Xu J, Wang Y, Zhang X. Stable Black Phosphorus Encapsulation in Porous Mesh-like UiO-66 Promoted Charge Transfer for Photocatalytic Oxidation of Toluene and o-Dichlorobenzene: Performance, Degradation Pathway, and Mechanism. ACS Catal 2022. [DOI: 10.1021/acscatal.2c01375] [Citation(s) in RCA: 30] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Affiliation(s)
- Jinfeng Chen
- School of Environment and Architecture, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yang Yang
- School of Environment and Architecture, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Shenghao Zhao
- School of Environment and Architecture, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Fukun Bi
- School of Environment and Architecture, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Liang Song
- School of Environment and Architecture, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Ning Liu
- School of Environment and Architecture, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Jingcheng Xu
- School of Materials and Chemistry, University of Shanghai for Science and Technology, 516 Jun Gong Road, Shanghai 200093, P. R. China
| | - Yuxin Wang
- Institute of Applied Biotechnology, Taizhou Vocation & Technical College, Taizhou 318000, Zhejiang, China
| | - Xiaodong Zhang
- School of Environment and Architecture, University of Shanghai for Science and Technology, Shanghai 200093, China
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45
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Tripathi RPN, Yang X, Gao J. Anisotropic third-harmonic generation of exfoliated As 2S 3 thin flakes. OPTICS EXPRESS 2022; 30:22661-22670. [PMID: 36224958 DOI: 10.1364/oe.457858] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2022] [Accepted: 05/31/2022] [Indexed: 06/16/2023]
Abstract
Van der Waals (vdW) materials have recently attracted significant interest in the context of orientation-dependent linear and nonlinear optical properties. Recently, arsenic trisulfide (As2S3) or orpiment is identified as a new vdW layered material having anisotropic vibrational and optomechanical responses due to the reduced in-plane crystal symmetry, but its nonlinear optical response is still not well understood yet. Herein, the anisotropic third-harmonic generation (THG) response of mechanically exfoliated As2S3 thin flakes is reported. The polarization-dependent evolution of THG emission from butterfly-shaped pattern to four-lobe pattern is comprehensively explored. Moreover, the third-order nonlinear susceptibility of As2S3 crystal is extracted by analyzing the thickness-dependent THG emission. We anticipate that the discussed results will not only update the existing understanding on the nonlinear light-matter interaction in anisotropic vdW materials, but also promote future applications in integrated photonic circuits, on-chip nonlinear signal processing, and polarization-sensitive optical devices.
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46
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Rahaman M, Zahn DRT. Plasmon-enhanced Raman spectroscopy of two-dimensional semiconductors. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:333001. [PMID: 35671747 DOI: 10.1088/1361-648x/ac7689] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2022] [Accepted: 06/07/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) semiconductors have grown fast into an extraordinary research field due to their unique physical properties compared to other semiconducting materials. The class of materials proved extremely fertile for both fundamental studies and a wide range of applications from electronics/spintronics/optoelectronics to photocatalysis and CO2reduction. 2D materials are highly confined in the out-of-plane direction and often possess very good environmental stability. Therefore, they have also become a popular material system for the manipulation of optoelectronic properties via numerous external parameters. Being a versatile characterization technique, Raman spectroscopy is used extensively to study and characterize various physical properties of 2D materials. However, weak signals and low spatial resolution hinder its application in more advanced systems where decoding local information plays an important role in advancing our understanding of these materials for nanotechnology applications. In this regard, plasmon-enhanced Raman spectroscopy has been introduced in recent time to investigate local heterogeneous information of 2D semiconductors. In this review, we summarize the recent progress of plasmon-enhanced Raman spectroscopy of 2D semiconductors. We discuss the current state-of-art and provide future perspectives on this specific branch of Raman spectroscopy applied to 2D semiconductors.
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Affiliation(s)
- Mahfujur Rahaman
- Semiconductor Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, 19104 Pennsilvania, United States of America
| | - Dietrich R T Zahn
- Semiconductor Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), 09126 Chemnitz, Germany
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47
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Guo J, Yang L, Zhang L, Li C. Simultaneous exfoliation and functionalization of black phosphorus by sucrose-assisted ball milling with NMP intercalating and preparation of flame retardant polyvinyl alcohol film. POLYMER 2022. [DOI: 10.1016/j.polymer.2022.125036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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48
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Dushaq G, Paredes B, Villegas JE, Tamalampudi SR, Rasras M. On-chip integration of 2D Van der Waals germanium phosphide (GeP) for active silicon photonics devices. OPTICS EXPRESS 2022; 30:15986-15997. [PMID: 36221452 DOI: 10.1364/oe.457242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Accepted: 04/11/2022] [Indexed: 06/16/2023]
Abstract
The outstanding performance and facile processability turn two-dimensional materials (2DMs) into the most sought-after class of semiconductors for optoelectronics applications. Yet, significant progress has been made toward the hybrid integration of these materials on silicon photonics (SiPh) platforms for a wide range of mid-infrared (MIR) applications. However, realizing 2D materials with a strong optical response in the NIR-MIR and excellent air stability is still a long-term goal. Here, we report a waveguide integrated photodetector based on a novel 2D GeP. This material uniquely combines narrow and wide tunable bandgap energies (0.51-1.68 eV), offering a broadband operation from visible to MIR spectral range. In a significant advantage over graphene devices, hybrid Si/GeP waveguide photodetectors work under bias with a low dark current of few nano-amps and demonstrate excellent stability and reproducibility. Additionally, 65 nm thick GeP devices integrated on silicon waveguides exhibit a remarkable photoresponsivity of 0.54 A/W and attain high external quantum efficiency of ∼ 51.3% under 1310 nm light and at room temperature. Furthermore, a measured absorption coefficient of 1.54 ± 0.3 dB/µm at 1310 nm suggests the potential of 2D GeP as an alternative infrared material with broad optical tunability and dynamic stability suitable for advanced optoelectronic integration.
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49
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Song L, Chen B, Qin Z, Liu X, Guo Z, Lou H, Liu H, Sun W, Guo C, Li C. Temperature-Dependent CAT-Like RGD-BPNS@SMFN Nanoplatform for PTT-PDT Self-Synergetic Tumor Phototherapy. Adv Healthc Mater 2022; 11:e2102298. [PMID: 34918483 DOI: 10.1002/adhm.202102298] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2021] [Revised: 11/22/2021] [Indexed: 12/27/2022]
Abstract
Phototherapies such as photothermal therapy (PTT) and photodynamic therapy (PDT) are considered as alternatives for tumor remedies, because of their advantages of precise spatial orientation, minimally invasive, and nonradiative operation. However, most of phototherapeutic agents still suffer from low photothermal conversion efficacy and photodynamic performance, poor biocompatibility, and intratumor accumulation. Herein a biocompatible and target-deliverable PTT-PDT self-synergetic nanoplatform of RGD-BPNS@SMFN based on temperature-dependent catalase (CAT)-like behavior for tumor elimination is presented. The homogeneously dispersible nanoplatform is designed and fabricated through anchoring spherical manganese ferrite nanoparticles (SMFN) to black phosphorus nanosheets (BPNS), followed by arginine-glycine-aspartic acid (RGD) peptide modification. The nanoplatform exhibits excellent targeting ability and enhanced photonic response in comparison to plain BPNS and SMFN in vitro and in vivo. It is found that PTT and PDT have a self-synergetic behavior by means of the dual phototherapy mode interaction. The self-synergetic mechanism is mainly ascribed to PTT-promoted inherent CAT-like activity in the nanoplatform, which remodels the tumor hypoxia microenvironment and further ameliorates the PDT efficiency, providing promising high performance nanoplatform for synergetic dual mode phototherapy, enriching the design for the antitumor nanozyme.
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Affiliation(s)
- Luping Song
- Institute of Advanced Cross-field Science, College of Life Science, Qingdao University, Qingdao, 266071, P. R. China
| | - Bo Chen
- Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, 99 Xuefu Road, Suzhou, Jiangsu, 215009, P. R. China
| | - Zhiguo Qin
- Nanjing Medical University, The First Clinical Medical College, Jiangsu Province Hospital, Guangzhou Road 300, Nanjing, Jiangsu, 210029, P. R. China
| | - Xin Liu
- State Key Laboratory of Bioelectronics, Jiangsu Key Laboratory for Biomaterials and Devices, School of Biological Sciences & Medical Engineering, Southeast University, Nanjing, 210096, P. R. China
| | - Zhanhang Guo
- State Key Laboratory of Bioelectronics, Jiangsu Key Laboratory for Biomaterials and Devices, School of Biological Sciences & Medical Engineering, Southeast University, Nanjing, 210096, P. R. China
| | - Hongchao Lou
- Department of Geriatrics, Suzhou Kowloon Hospital, Shanghai Jiaotong University School of Medicine, Suzhou, Jiangsu Province, 215028, P. R. China
| | - Hui Liu
- Institute of Advanced Cross-field Science, College of Life Science, Qingdao University, Qingdao, 266071, P. R. China
| | - Wei Sun
- Key Lab of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Key Lab of Functional Materials and Photoelectrochemistry of Haikou, College of Chemistry and Chemical Engineering, Hainan Normal University, Haikou, 571158, P. R. China
| | - Chunxian Guo
- Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, 99 Xuefu Road, Suzhou, Jiangsu, 215009, P. R. China
| | - Changming Li
- Institute of Advanced Cross-field Science, College of Life Science, Qingdao University, Qingdao, 266071, P. R. China.,Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, 99 Xuefu Road, Suzhou, Jiangsu, 215009, P. R. China.,Institute for Clean Energy & Advanced Materials, Southwest University, Chongqing, 400715, P. R. China
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50
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Ling Z, Li P, Zhang SY, Arif N, Zeng YJ. Stability and passivation of 2D group VA elemental materials: black phosphorus and beyond. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:224004. [PMID: 35259736 DOI: 10.1088/1361-648x/ac5bce] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Accepted: 03/08/2022] [Indexed: 06/14/2023]
Abstract
Since the successful isolation of graphene in 2004, two-dimensional (2D) materials have become one of the focuses in material science owing to their extraordinary physical and chemical properties. In particular, 2D group VA elemental materials exhibit fascinating thickness-dependent band structures. Unfortunately, the well-known instability issue hinders their fundamental researches and practical applications. In this review, we first discuss the degradation mechanism of black phosphorus (BP), a most studied group VA material. Next, we summarize the methods to enhance BP stability with the focus of multifunctional passivation. Finally, we briefly discuss the protection strategies of other emerging group VA materials in recent years. This review provides insight for the degradation mechanism and protecting strategy for 2D group VA elements materials, which will promote their potential applications in electronics, optoelectronics, and biomedicine.
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Affiliation(s)
- Zhaoheng Ling
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Peng Li
- College of New Energy, China University of Petroleum (East China), Qingdao, 266580, People's Republic of China
| | - Su-Yun Zhang
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Nayab Arif
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Yu-Jia Zeng
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
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