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Wang Y, Wu H, Gao H, Ren Q, Ni K, Liu S, Ma W, Wang J, Liu Z, Liu R. Hybrid Thin Film Encapsulation for Improving the Stability of PbS Quantum Dot Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404984. [PMID: 39031101 DOI: 10.1002/smll.202404984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2024] [Revised: 07/08/2024] [Indexed: 07/22/2024]
Abstract
The instability to moisture, heat, and ultraviolet (UV) light is the main problem in the application of quantum dot solar cells (QDSCs). Thin film encapsulation can effectively improve their operational stability. However, it is difficult to achieve multiple barrier effects with single layer of encapsulated film. Here, a hybrid thin-film encapsulation strategy is reported to encapsulate lead sulfide QDSCs, which can isolate moisture and partial thermal, and prevent the penetration of UV light, thus retarding the surface oxidation process of the quantum dots. After 60 h, the encapsulated device retains a normalized power conversion efficiency of 83.8% and 80.6% at 85% humidity and 75 °C, respectively, which is three and six times of the value obtained in unencapsulated devices. At continuous UV illumination, encapsulated device exhibits five times higher stability than the reference. This strategy provides the way for the overall improvement of the operating stability of lead sulfide QDSCs in harsh environments of high humidity, high temperature, and UV light.
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Affiliation(s)
- Yiying Wang
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, College of Energy, Soochow University, Suzhou, Jiangsu, 215006, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Hao Wu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Haotian Gao
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Qinyi Ren
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, College of Energy, Soochow University, Suzhou, Jiangsu, 215006, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Kun Ni
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, College of Energy, Soochow University, Suzhou, Jiangsu, 215006, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Shanfei Liu
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, College of Energy, Soochow University, Suzhou, Jiangsu, 215006, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Wanli Ma
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jianxiang Wang
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, College of Energy, Soochow University, Suzhou, Jiangsu, 215006, P. R. China
| | - Zeke Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Ruiyuan Liu
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, College of Energy, Soochow University, Suzhou, Jiangsu, 215006, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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2
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Zhang L, Wang S, Shi Y, Xu J, Cao S, Deng Z, Chen Y, Zhang J, Yang X, Meng Z, Fan Q, Sun B. Organic hole transport materials for high performance PbS quantum dot solar cells. Chem Commun (Camb) 2024; 60:5294-5297. [PMID: 38659410 DOI: 10.1039/d4cc01194e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
We developed a triazatruxene-based hole transport material (HTM), 3Ka-DBT-3Ka, aiming to enhance band alignment and augment charge generation and collection in devices, as an alternative for 1,2-ethanedithiol (EDT). The PbS CQD solar cells employing 3Ka-DBT-3Ka as the HTM achieve a peak efficiency of 11.4%, surpassing devices employing the conventional PbS-EDT HTM (8.9%).
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Affiliation(s)
- Li Zhang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Shunqiang Wang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Yi Shi
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Jiazi Xu
- Tengzhou Huashu Intelligent Manufacturing Academy, Zaozhuang, 277599, Shandong, China
| | - Shuang Cao
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Zijian Deng
- Institute of Artificial Photosynthesis, State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology (DUT), 2 Linggong Rd., Dalian 116024, China
| | - Yong Chen
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Junjie Zhang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Xichuan Yang
- Institute of Artificial Photosynthesis, State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology (DUT), 2 Linggong Rd., Dalian 116024, China
| | - Zhen Meng
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P. R. China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
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3
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Chiu A, Lu C, Kachman DE, Rong E, Chintapalli SM, Lin Y, Khurgin D, Thon SM. Role of the ZnO electron transport layer in PbS colloidal quantum dot solar cell yield. NANOSCALE 2024; 16:8273-8285. [PMID: 38592692 DOI: 10.1039/d3nr06558h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
The development of lead sulfide (PbS) colloidal quantum dot (CQD) solar cells has led to significant power conversion efficiency (PCE) improvements in recent years, with record efficiencies now over 15%. Many of the recent advances in improving PCE have focused on improving the interface between the PbS CQD active layer and the zinc oxide (ZnO) electron transport layer (ETL). Proper optimization of the ZnO ETL also increases yield, or the percentage of functioning devices per fabrication run. Simultaneous improvements in both PCE and yield will be critical as the field approaches commercialization. This review highlights recent advances in the synthesis of ZnO ETLs and discusses the impact and critical role of ZnO synthesis conditions on the PCE and yield of PbS CQD solar cells.
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Affiliation(s)
- Arlene Chiu
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Chengchangfeng Lu
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Dana E Kachman
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Eric Rong
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Sreyas M Chintapalli
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Yida Lin
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Daniel Khurgin
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Susanna M Thon
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
- Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA
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4
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Xiao G, Liang T, Wang X, Ying C, Lv K, Shi C. Reduced Surface Trap States of PbS Quantum Dots by Acetonitrile Treatment for Efficient SnO 2-Based PbS Quantum Dot Solar Cells. ACS OMEGA 2024; 9:12211-12218. [PMID: 38496937 PMCID: PMC10938384 DOI: 10.1021/acsomega.4c00208] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/07/2024] [Revised: 02/01/2024] [Accepted: 02/22/2024] [Indexed: 03/19/2024]
Abstract
The solution-phase ligand-exchange strategy offers a simple pathway to prepare PbS quantum dots (QDs) and their corresponding solar cells. However, the production of high-quality PbS QDs with reduced surface trap state density for efficient PbS QD solar cells (QDSCs) still faces challenges. As the hydroxyl group (-OH) has been demonstrated to be the primary source of the surface trap states on PbS QDs in the general oleic acid method, here, we present an effective and facile strategy for reducing the surface -OH content of PbS QDs by using acetonitrile (ACN) as precipitant to wash the surface of QDs, which significantly decreases the trap state density and enables the preparation of superior PbS QDs. The resulting solar cell with an ITO/SnO2/n-PbS/p-PbS/Au structure obtained an improved photoelectric conversion efficiency (PCE) from 8.53 to 10.49% with an enhanced air storage stability, realizing a high PCE for SnO2-based PbS QDSCs.
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Affiliation(s)
- Guannan Xiao
- Chengdu Polytechnic, Chengdu 610041, P. R. China
- Material Corrosion
and Protection Key Laboratory of Sichuan Province, Zigong 643002, P. R. China
| | - Taohua Liang
- Chengdu Polytechnic, Chengdu 610041, P. R. China
| | | | - Chao Ying
- School of Chemistry
and Materials Engineering, Anhui Key Laboratory of Low Temperature
Co-fired Materials, Huainan Normal University, Huainan 232038, P. R. China
| | - Kai Lv
- School of Chemistry
and Chemical Engineering, Hefei University
of Technology, Hefei 230009, P. R. China
| | - Chengwu Shi
- School of Chemistry
and Chemical Engineering, Hefei University
of Technology, Hefei 230009, P. R. China
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5
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Ding X, Wen X, Kawata Y, Liu Y, Shi G, Ghazi RB, Sun X, Zhu Y, Wu H, Gao H, Shen Q, Liu Z, Ma W. In situ synergistic halogen passivation of semiconducting PbS quantum dot inks for efficient photovoltaics. NANOSCALE 2024; 16:5115-5122. [PMID: 38369889 DOI: 10.1039/d3nr05951k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/20/2024]
Abstract
Lead sulfide colloidal quantum dots (PbS CQDs) show great potential in next-generation photovoltaics. However, their high specific surface area and complex surface crystallography lead to a high surface trap density, which normally requires more than one type of capping ion or ligand to achieve effective surface passivation. In this study, we performed in situ mixed halogen passivation (MHP) during the direct synthesis of semiconducting PbS CQD inks by using different lead halogens. The different halogens can bind with the surface of the CQD throughout the nucleation/growth process, resulting in optimal surface configuration. As a result, the MHP CQD exhibited superior surface passivation compared to the conventionally iodine-capped CQDs. Finally, we achieved a substantial improvement in efficiency from 10.64% to 12.58% after the MHP treatment. Our work demonstrates the advantages of exploring efficient passivation in the directly synthesized CQD inks.
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Affiliation(s)
- Xiaobo Ding
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, Jiangsu, PR China
| | - Xin Wen
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Yuto Kawata
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan
| | - Yang Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Guozheng Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan
| | - Refka Ben Ghazi
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Xiang Sun
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Yujie Zhu
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Hao Wu
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Haotian Gao
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Qing Shen
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan
| | - Zeke Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, Jiangsu, PR China
| | - Wanli Ma
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, PR China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, Jiangsu, PR China
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6
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Zhao X, Li M, Ma T, Yan J, Khalaf GMG, Chen C, Hsu HY, Song H, Tang J. Stable PbS colloidal quantum dot inks enable blade-coating infrared solar cells. FRONTIERS OF OPTOELECTRONICS 2023; 16:27. [PMID: 37882898 PMCID: PMC10602987 DOI: 10.1007/s12200-023-00085-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Accepted: 09/11/2023] [Indexed: 10/27/2023]
Abstract
Infrared solar cells are more effective than normal bandgap solar cells at reducing the spectral loss in the near-infrared region, thus also at broadening the absorption spectra and improving power conversion efficiency. PbS colloidal quantum dots (QDs) with tunable bandgap are ideal infrared photovoltaic materials. However, QD solar cell production suffers from small-area-based spin-coating fabrication methods and unstable QD ink. Herein, the QD ink stability mechanism was fully investigated according to Lewis acid-base theory and colloid stability theory. We further studied a mixed solvent system using dimethylformamide and butylamine, compatible with the scalable manufacture of method-blade coating. Based on the ink system, 100 cm2 of uniform and dense near-infrared PbS QDs (~ 0.96 eV) film was successfully prepared by blade coating. The average efficiencies of above absorber-based devices reached 11.14% under AM1.5G illumination, and the 800 nm-filtered efficiency achieved 4.28%. Both were the top values among blade coating method based devices. The newly developed ink showed excellent stability, and the device performance based on the ink stored for 7 h was similar to that of fresh ink. The matched solvent system for stable PbS QD ink represents a crucial step toward large area blade coating photoelectric devices.
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Affiliation(s)
- Xinzhao Zhao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Mingyu Li
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Tianjun Ma
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Jun Yan
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Gomaa Mohamed Gomaa Khalaf
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Chao Chen
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Hsien-Yi Hsu
- School of Energy and Environment and Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, China.
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China.
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China.
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, 325035, China.
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, 325035, China
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7
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Liu Y, Jiang Z, Huang C, Jeong S, Coughlin AL, Zhang S, Liu Y, Ye X. Ligand-Controlled Electroreduction of CO 2 to Formate over Facet-Defined Bimetallic Sulfide Nanoplates. NANO LETTERS 2023. [PMID: 37339508 DOI: 10.1021/acs.nanolett.3c00703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2023]
Abstract
CO2 reduction (CO2R) catalyzed by an efficient, stable, and earth-abundant electrocatalyst offers an attractive means to store energy derived from renewable sources. Here, we describe the synthesis of facet-defined Cu2SnS3 nanoplates and the ligand-controlled CO2R property. We show that thiocyanate-capped Cu2SnS3 nanoplates possess excellent selectivity toward formate over a wide range of potentials and current densities, attaining a maximum formate Faradaic efficiency of 92% and partial current densities as high as 181 mA cm-2 when tested using a flow cell with gas-diffusion electrode. In situ spectroscopic measurements and theoretical calculations reveal that the high formate selectivity originates from favorable adsorption of HCOO* intermediates on cationic Sn sites that are electronically modulated by thiocyanates bound to adjacent Cu sites. Our work illustrates that well-defined multimetallic sulfide nanocrystals with tailored surface chemistries could provide a new avenue for future CO2R electrocatalyst design.
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Affiliation(s)
- Yang Liu
- Department of Chemistry, Indiana University Bloomington, Bloomington, Indiana 47405, United States
| | - Zhou Jiang
- Texas Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Chuanliang Huang
- Department of Chemistry, Indiana University Bloomington, Bloomington, Indiana 47405, United States
| | - Soojin Jeong
- Department of Chemistry, Indiana University Bloomington, Bloomington, Indiana 47405, United States
| | - Amanda L Coughlin
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
| | - Shixiong Zhang
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
| | - Yuanyue Liu
- Texas Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Xingchen Ye
- Department of Chemistry, Indiana University Bloomington, Bloomington, Indiana 47405, United States
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8
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Fang S, Huang J, Tao R, Wei Q, Ding X, Yajima S, Chen Z, Zhu W, Liu C, Li Y, Yin N, Song L, Liu Y, Shi G, Wu H, Gao Y, Wen X, Chen Q, Shen Q, Li Y, Liu Z, Li Y, Ma W. Open-Shell Diradical-Sensitized Electron Transport Layer for High-Performance Colloidal Quantum Dot Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2212184. [PMID: 36870078 DOI: 10.1002/adma.202212184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2022] [Revised: 02/17/2023] [Indexed: 05/26/2023]
Abstract
The zinc oxide (ZnO) nanoparticles (NPs) are well-documented as an excellent electron transport layer (ETL) in optoelectronic devices. However, the intrinsic surface flaw of the ZnO NPs can easily result in serious surface recombination of carriers. Exploring effective passivation methods of ZnO NPs is essential to maximize the device's performance. Herein, a hybrid strategy is explored for the first time to improve the quality of ZnO ETL by incorporating stable organic open-shell donor-acceptor type diradicaloids. The high electron-donating feature of the diradical molecules can efficiently passivate the deep-level trap states and improve the conductivity of ZnO NP film. The unique advantage of the radical strategy is that its passivation effectiveness is highly correlated with the electron-donating ability of radical molecules, which can be precisely controlled by the rational design of molecular chemical structures. The well-passivated ZnO ETL is applied in lead sulfide (PbS) colloidal quantum dot solar cells, delivering a power conversion efficiency of 13.54%. More importantly, as a proof-of-concept study, this work will inspire the exploration of general strategies using radical molecules to construct high-efficiency solution-processed optoelectronic devices.
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Affiliation(s)
- Shiwen Fang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jiaxing Huang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Ran Tao
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Qi Wei
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Xiaobo Ding
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Shota Yajima
- Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan
| | - Zhongxin Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Weiya Zhu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Cheng Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Yusheng Li
- Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan
| | - Ni Yin
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, 215123, China
| | - Leliang Song
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Yang Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Guozheng Shi
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Hao Wu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Yiyuan Gao
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Xin Wen
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, 215123, China
| | - Qing Shen
- Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan
| | - Youyong Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Zeke Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Yuan Li
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Wanli Ma
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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9
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Liu Y, Wu H, Shi G, Li Y, Gao Y, Fang S, Tang H, Chen W, Ma T, Khan I, Wang K, Wang C, Li X, Shen Q, Liu Z, Ma W. Merging Passivation in Synthesis Enabling the Lowest Open-Circuit Voltage Loss for PbS Quantum Dot Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207293. [PMID: 36380715 DOI: 10.1002/adma.202207293] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 11/09/2022] [Indexed: 06/16/2023]
Abstract
The high open-circuit voltage (Voc ) loss arising from insufficient surface passivation is the main factor that limits the efficiency of current lead sulfide colloidal quantum dots (PbS CQDs) solar cell. Here, synergistic passivation is performed in the direct synthesis of conductive PbS CQD inks by introducing multifunctional ligands to well coordinate the complicated CQDs surface with the thermodynamically optimal configuration. The improved passivation effect is intactly delivered to the final photovoltaic device, leading to an order lower surface trap density and beneficial doping behavior compared to the control sample. The obtained CQD inks show the highest photoluminescence quantum yield (PLQY) of 24% for all photovoltaic PbS CQD inks, which is more than twice the reported average PLQY value of ≈10%. As a result, a high Voc of 0.71 V and power conversion efficiency (PCE) of 13.3% is achieved, which results in the lowest Voc loss (0.35 eV) for the reported PbS CQD solar cells with PCE >10%, comparable to that of perovskite solar cells. This work provides valuable insights into the future CQDs passivation strategies and also demonstrates the great potential for the direct-synthesis protocol of PbS CQDs.
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Affiliation(s)
- Yang Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Hao Wu
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Guozheng Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Yusheng Li
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Yiyuan Gao
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Shiwen Fang
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Haodong Tang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Wei Chen
- College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, China
| | - Tianshu Ma
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Irfan Khan
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Kai Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Changlei Wang
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Xiaofeng Li
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Qing Shen
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Zeke Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Wanli Ma
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
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10
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Wang C, Wang Y, Jia Y, Wang H, Li X, Liu S, Liu X, Zhu H, Wang H, Liu Y, Zhang X. Precursor Chemistry Enables the Surface Ligand Control of PbS Quantum Dots for Efficient Photovoltaics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2204655. [PMID: 36382562 PMCID: PMC9896031 DOI: 10.1002/advs.202204655] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Revised: 10/18/2022] [Indexed: 06/16/2023]
Abstract
The surface ligand environment plays a dominant role in determining the physicochemical, optical, and electronic properties of colloidal quantum dots (CQDs). Specifically, the ligand-related electronic traps are the main reason for the carrier nonradiative recombination and the energetic losses in colloidal quantum dot solar cells (CQDSCs), which are usually solved with numerous advanced ligand exchange reactions. However, the synthesis process, as the essential initial step to control the surface ligand environment of CQDs, has lagged behind these post-synthesis ligand exchange reactions. The current PbS CQDs synthesis tactic generally uses lead oxide (PbO) as lead precursor, and thus suffers from the water byproducts issue increasing the surface-hydroxyl ligands and aggravating trap-induced recombination in the PbS CQDSCs. Herein, an organic-Pb precursor, lead (II) acetylacetonate (Pb(acac)2 ), is used instead of a PbO precursor to avoid the adverse impact of water byproducts. Consequently, the Pb(acac)2 precursor successfully optimizes the surface ligands of PbS CQDs by reducing the hydroxyl ligands and increasing the iodine ligands with trap-passivation ability. Finally, the Pb(acac)2 -based CQDSCs possess remarkably reduced trap states and suppressed nonradiative recombination, generating a certified record Voc of 0.652 V and a champion power conversion efficiency (PCE) of 11.48% with long-term stability in planar heterojunction-structure CQDSCs.
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Affiliation(s)
- Chao Wang
- Key Laboratory of UV‐Emitting Materials and Technology of Chinese Ministry of EducationNortheast Normal UniversityChangchun130024China
| | - Yinglin Wang
- Key Laboratory of UV‐Emitting Materials and Technology of Chinese Ministry of EducationNortheast Normal UniversityChangchun130024China
| | - Yuwen Jia
- Key Laboratory of UV‐Emitting Materials and Technology of Chinese Ministry of EducationNortheast Normal UniversityChangchun130024China
| | - Hai Wang
- State Key Laboratory on Integrated OptoelectronicsCollege of Electronic Science and EngineeringJilin UniversityChangchun130012China
| | - Xiaofei Li
- Key Laboratory of UV‐Emitting Materials and Technology of Chinese Ministry of EducationNortheast Normal UniversityChangchun130024China
| | - Shuai Liu
- Key Laboratory of UV‐Emitting Materials and Technology of Chinese Ministry of EducationNortheast Normal UniversityChangchun130024China
| | - Xinlu Liu
- Key Laboratory of UV‐Emitting Materials and Technology of Chinese Ministry of EducationNortheast Normal UniversityChangchun130024China
| | - Hongbo Zhu
- Key Laboratory of UV‐Emitting Materials and Technology of Chinese Ministry of EducationNortheast Normal UniversityChangchun130024China
| | - Haiyu Wang
- State Key Laboratory on Integrated OptoelectronicsCollege of Electronic Science and EngineeringJilin UniversityChangchun130012China
| | - Yichun Liu
- Key Laboratory of UV‐Emitting Materials and Technology of Chinese Ministry of EducationNortheast Normal UniversityChangchun130024China
| | - Xintong Zhang
- Key Laboratory of UV‐Emitting Materials and Technology of Chinese Ministry of EducationNortheast Normal UniversityChangchun130024China
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11
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Liu X, Fu T, Liu J, Wang Y, Jia Y, Wang C, Li X, Zhang X, Liu Y. Solution Annealing Induces Surface Chemical Reconstruction for High-Efficiency PbS Quantum Dot Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2022; 14:14274-14283. [PMID: 35289178 DOI: 10.1021/acsami.2c01196] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Colloidal quantum dots (CQDs) have a large specific surface area and a complex surface structure. Their properties in diverse optoelectronic applications are largely determined by their surface chemistry. Therefore, it is essential to investigate the surface chemistry of CQDs for improving device performance. Herein, we realized an efficient surface chemistry optimization of lead sulfide (PbS) CQDs for photovoltaics by annealing the CQD solution with concentrated lead halide ligands after the conventional solution-phase ligand exchange. During the annealing process, the colloidal solution was used to transfer heat and create a secondary reaction environment, promoting the desorption of electrically insulating oleate ligands as well as the trap-related surface groups (Pb-hydroxyl and oxidized Pb species). This was accompanied by the binding of more conductive lead halide ligands on the CQD surface, eventually achieving a more complete ligand exchange. Furthermore, this strategy also minimized CQD polydispersity and decreased aggregation caused by conventional solution-phase ligand exchange, thereby contributing to yielding CQD films with twofold enhanced carrier mobility and twofold reduced trap-state density compared with those of the control. Based on these merits, the fabricated PbS CQD solar cells showed high efficiency of 11% under ambient conditions. Our strategy opens a novel and effective avenue to obtain high-efficiency CQD solar cells with diverse band gaps, providing meaningful guidance for controlling ligand reactivity and realizing subtly purified CQDs.
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Affiliation(s)
- Xinlu Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Ting Fu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Jianping Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Yinglin Wang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Yuwen Jia
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Chao Wang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Xiaofei Li
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Xintong Zhang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
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12
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Pradhan S. Multi-bandgap colloidal quantum dot mixing for optoelectronic devices. NEW J CHEM 2022. [DOI: 10.1039/d2nj01987f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This article discusses the current status and future prospects of multi-bandgap colloidal quantum dot-based optoelectronic devices.
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Affiliation(s)
- Santanu Pradhan
- Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee-247667, India
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13
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Li M, Chen S, Zhao X, Xiong K, Wang B, Shah UA, Gao L, Lan X, Zhang J, Hsu HY, Tang J, Song H. Matching Charge Extraction Contact for Infrared PbS Colloidal Quantum Dot Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105495. [PMID: 34859592 DOI: 10.1002/smll.202105495] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2021] [Revised: 10/21/2021] [Indexed: 05/17/2023]
Abstract
Infrared solar cells (IRSCs) can supplement silicon or perovskite SCs to broaden the utilization of the solar spectrum. As an ideal infrared photovoltaic material, PbS colloidal quantum dots (CQDs) with tunable bandgaps can make good use of solar energy, especially the infrared region. However, as the QD size increases, the energy level shrinking and surface facet evolution makes us reconsider the matching charge extraction contacts and the QD passivation strategy. Herein, different to the traditional sol-gel ZnO layer, energy-level aligned ZnO thin film from a magnetron sputtering method is adopted for electron extraction. In addition, a modified hybrid ligand recipe is developed for the facet passivation of large size QDs. As a result, the champion IRSC delivers an open circuit voltage of 0.49 V and a power conversion efficiency (PCE) of 10.47% under AM1.5 full-spectrum illumination, and the certified PCE is over 10%. Especially the 1100 nm filtered efficiency achieves 1.23%. The obtained devices also show high storage stability. The present matched electron extraction and QD passivation strategies are expected to highly booster the IR conversion yield and promote the fast development of new conception QD optoelectronics.
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Affiliation(s)
- Mingyu Li
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, P. R. China
| | - Shiwu Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xinzhao Zhao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Kao Xiong
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Bo Wang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Usman Ali Shah
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xinzheng Lan
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Jianbing Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Hsien-Yi Hsu
- School of Energy and Environment & Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong, 999077, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, P. R. China
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
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14
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Yuan M, Wang X, Chen X, He J, Li K, Song B, Hu H, Gao L, Lan X, Chen C, Tang J. Phase-Transfer Exchange Lead Chalcogenide Colloidal Quantum Dots: Ink Preparation, Film Assembly, and Solar Cell Construction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2102340. [PMID: 34561947 DOI: 10.1002/smll.202102340] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Revised: 07/23/2021] [Indexed: 06/13/2023]
Abstract
Solution-processed colloidal quantum dots (CQDs) are promising candidates for the third-generation photovoltaics due to their low cost and spectral tunability. The development of CQD solar cells mainly relies on high-quality CQD ink, smooth and dense film, and charge-extraction-favored device architectures. In particular, advances in the processing of CQDs are essential for high-quality QD solids. The phase transfer exchange (PTE), in contrast with traditional solid-state ligand exchange, has demonstrated to be the most promising approach for high-quality QD solids in terms of charge transport and defect passivation. As a result, the efficiencies of Pb chalcogenide CQD solar cells have been rapidly improved to 14.0%. In this review, the development of the PTE method is briefly reviewed for lead chalcogenide CQD ink preparation, film assembly, and device construction. Particularly, the key roles of lead halides and additional additives are emphasized for defect passivation and charge transport improvement. In the end, several potential directions for future research are proposed.
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Affiliation(s)
- Mohan Yuan
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xia Wang
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Xiao Chen
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Jungang He
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Boxiang Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Huicheng Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
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15
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Zeng X, Hou M, Zhu P, Yuan M, Ouyang S, Lu Q, Zhao C, Wang H, Du F, Zeng G, Zhang Y. g-C 3N 5-dots as fluorescence probes prepared by an alkali-assisted hydrothermal method for cell imaging. RSC Adv 2022; 12:26476-26484. [PMID: 36275159 PMCID: PMC9478806 DOI: 10.1039/d2ra03934f] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2022] [Accepted: 08/18/2022] [Indexed: 11/21/2022] Open
Abstract
Carbon nitride materials have become one of the highly explored carbon-based nanomaterials due to their unique properties. Herein, the novel graphitic carbon nitride quantum dots (g-C3N5-dots) were synthesized using an alkali-assisted hydrothermal method. The proposed strategy was simple, time-saving and the entire synthetic process only takes 60 min. And the prepared g-C3N5-dots showed excellent dispersion and good stability in water. What is more, the g-C3N5-dots displayed bright blue fluorescence with a high quantum yield of 12%. It was found that the g-C3N5-dots exhibited peroxidase-like activity, good biocompatibility and low cytotoxicity and can be successfully applied in cell imaging. The proposed method opens a new and efficient way for the preparation of fluorescent g-C3N5-dots and facilitates g-C3N5-dots for bioimaging and related biological sensing applications. Novel graphitic carbon nitride quantum dots (g-C3N5-dots) were synthesized by an alkali-assisted hydrothermal method, having great potential applications in bioimaging and biological sensing.![]()
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Affiliation(s)
- Xiangwang Zeng
- College of Biological and Chemical Engineering, Changsha University, Changsha, 410022, China
| | - Mengke Hou
- College of Biological and Chemical Engineering, Changsha University, Changsha, 410022, China
| | - Pan Zhu
- College of Biological and Chemical Engineering, Changsha University, Changsha, 410022, China
| | - Minyi Yuan
- College of Biological and Chemical Engineering, Changsha University, Changsha, 410022, China
| | - Sitao Ouyang
- College of Biological and Chemical Engineering, Changsha University, Changsha, 410022, China
| | - Qiujun Lu
- College of Biological and Chemical Engineering, Changsha University, Changsha, 410022, China
| | - Chenxi Zhao
- College of Biological and Chemical Engineering, Changsha University, Changsha, 410022, China
| | - Haiyan Wang
- College of Biological and Chemical Engineering, Changsha University, Changsha, 410022, China
| | - Fuyou Du
- College of Biological and Chemical Engineering, Changsha University, Changsha, 410022, China
| | - Guangsheng Zeng
- College of Biological and Chemical Engineering, Changsha University, Changsha, 410022, China
| | - Youyu Zhang
- Key Laboratory of Chemical Biology and Traditional Chinese Medicine Research (Ministry of Education), College of Chemistry and Chemical Engineering, Hunan Normal University, Changsha 410081, China
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16
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Xing M, Wang L, Wang R. A Review on the Effects of ZnO Nanowire Morphology on the Performance of Interpenetrating Bulk Heterojunction Quantum Dot Solar Cells. NANOMATERIALS 2021; 12:nano12010114. [PMID: 35010064 PMCID: PMC8746555 DOI: 10.3390/nano12010114] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Revised: 12/24/2021] [Accepted: 12/27/2021] [Indexed: 12/04/2022]
Abstract
Interpenetrating bulk heterojunction (IBHJ) quantum dot solar cells (QDSCs) offer a direct pathway for electrical contacts to overcome the trade-off between light absorption and carrier extraction. However, their complex three-dimensional structure creates higher requirements for the optimization of their design due to their more difficult interface defect states control, more complex light capture mechanism, and more advanced QD deposition technology. ZnO nanowire (NW) has been widely used as the electron transport layer (ETL) for this structure. Hence, the optimization of the ZnO NW morphology (such as density, length, and surface defects) is the key to improving the photoelectric performance of these SCs. In this study, the morphology control principles of ZnO NW for different synthetic methods are discussed. Furthermore, the effects of the density and length of the NW on the collection of photocarriers and their light capture effects are investigated. It is indicated that the NW spacing determines the transverse collection of electrons, while the length of the NW and the thickness of the SC often affect the longitudinal collection of holes. Finally, the optimization strategies for the geometrical morphology of and defect passivation in ZnO NWs are proposed to improve the efficiency of IBHJ QDSCs.
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Affiliation(s)
| | | | - Ruixiang Wang
- Correspondence: ; Tel.: +86-29-82668738; Fax: +86-29-82668725
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17
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Mandal D, Dambhare NV, Rath AK. Reduction of Hydroxyl Traps and Improved Coupling for Efficient and Stable Quantum Dot Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2021; 13:46549-46557. [PMID: 34553589 DOI: 10.1021/acsami.1c11214] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Progress in quantum dot (QD)-based solar cells has been underpinned by the improvements in surface passivation and advancements in device engineering. Acute control over the surface properties is crucial to restrict the formation of in-gap trap states and improve the QD coupling in achieving conducting QD films. In this report, we demonstrate a solution-phase hybrid passivation strategy, which is beneficial in removing detrimental hydroxyl traps and improving the coupling between QDs by reducing the interdot distance. Advancement in surface passivation is translated to the long carrier lifetime, higher carrier mobility, and superior protection toward degradations in QD solids. The performance of solar cell devices is increased by 26% to reach an efficiency of 10.6%, compared to the state-of-the-art lead halide passivated solar cells. The improvement in solar cell performance is supported by the reduction of trap states and an 80 nm increase in thickness of the light-absorbing QD layer.
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Affiliation(s)
- Debranjan Mandal
- CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Neha V Dambhare
- CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Arup K Rath
- CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
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18
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Jarschel P, Kim JH, Biadala L, Berthe M, Lambert Y, Osgood RM, Patriarche G, Grandidier B, Xu J. Single-Electron Tunneling PbS/InP Heterostructure Nanoplatelets for Synaptic Operations. ACS APPLIED MATERIALS & INTERFACES 2021; 13:38450-38457. [PMID: 34357748 DOI: 10.1021/acsami.1c06096] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Power consumption, thermal management, and wiring challenge of the binary serial architecture drive the search for alternative paradigms to computing. Of special interest is neuromorphic computing, in which materials and device structures are designed to mimic neuronal functionalities with energy-efficient non-linear responses and both short- and long-term plasticities. In this work, we explore and report on the enabling potential of single-electron tunneling (SET) in PbS nanoplatelets epitaxially grown in the liquid phase on InP, which present these key features. By extrapolating the experimental data in the SET regime, we predict and model synaptic operations. The low-energy (<fJ), high-speed (MHz) operation and scalable fabrication process of the PbS/InP nanoplatelets make such a nanoscale system attractive as neuromorphic computing building blocks.
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Affiliation(s)
- Paulo Jarschel
- School of Engineering, Brown University, Providence 02912, Rhode Island, United States
- Photonics Research Center, University of Campinas, Campinas 13083-859, São Paulo, Brazil
- Quantum Electronics Department, Gleb Wataghin Physics Institute, University of Campinas, Campinas 13083-859, São Paulo, Brazil
| | - Jin Ho Kim
- School of Engineering, Brown University, Providence 02912, Rhode Island, United States
| | - Louis Biadala
- University of Lille, CNRS, Centrale Lille, University of Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, Lille 59000, France
| | - Maxime Berthe
- University of Lille, CNRS, Centrale Lille, University of Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, Lille 59000, France
| | - Yannick Lambert
- University of Lille, CNRS, Centrale Lille, University of Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, Lille 59000, France
| | - Richard M Osgood
- US Army Combat Capabilities Development Command-Soldier Center, 15 General Greene Avenue, Natick, Massachusetts 01760, United States
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, University Paris-Saclay, Avenue de la Vauve, Palaiseau 91120, France
| | - Bruno Grandidier
- University of Lille, CNRS, Centrale Lille, University of Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, Lille 59000, France
| | - Jimmy Xu
- School of Engineering, Brown University, Providence 02912, Rhode Island, United States
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19
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Shi G, Wang H, Zhang Y, Cheng C, Zhai T, Chen B, Liu X, Jono R, Mao X, Liu Y, Zhang X, Ling X, Zhang Y, Meng X, Chen Y, Duhm S, Zhang L, Li T, Wang L, Xiong S, Sagawa T, Kubo T, Segawa H, Shen Q, Liu Z, Ma W. The effect of water on colloidal quantum dot solar cells. Nat Commun 2021; 12:4381. [PMID: 34282133 PMCID: PMC8289876 DOI: 10.1038/s41467-021-24614-7] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2020] [Accepted: 06/22/2021] [Indexed: 02/06/2023] Open
Abstract
Almost all surfaces sensitive to the ambient environment are covered by water, whereas the impacts of water on surface-dominated colloidal quantum dot (CQD) semiconductor electronics have rarely been explored. Here, strongly hydrogen-bonded water on hydroxylated lead sulfide (PbS) CQD is identified. The water could pilot the thermally induced evolution of surface chemical environment, which significantly influences the nanostructures, carrier dynamics, and trap behaviors in CQD solar cells. The aggravation of surface hydroxylation and water adsorption triggers epitaxial CQD fusion during device fabrication under humid ambient, giving rise to the inter-band traps and deficiency in solar cells. To address this problem, meniscus-guided-coating technique is introduced to achieve dense-packed CQD solids and extrude ambient water, improving device performance and thermal stability. Our works not only elucidate the water involved PbS CQD surface chemistry, but may also achieve a comprehensive understanding of the impact of ambient water on CQD based electronics.
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Affiliation(s)
- Guozheng Shi
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Haibin Wang
- Research Center for Advanced Science and Technology, The University of Tokyo, Meguro-ku, Tokyo, Japan
| | - Yaohong Zhang
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo, Japan
| | - Chen Cheng
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Tianshu Zhai
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Botong Chen
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Xinyi Liu
- Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb, IL, USA
| | - Ryota Jono
- Research Center for Advanced Science and Technology, The University of Tokyo, Meguro-ku, Tokyo, Japan
| | - Xinnan Mao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Yang Liu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Xuliang Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Xufeng Ling
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Yannan Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Xing Meng
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Yifan Chen
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Steffen Duhm
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Liang Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Tao Li
- Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb, IL, USA
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Lu Wang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Shiyun Xiong
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China
| | - Takashi Sagawa
- Graduate School of Energy Science, Kyoto University, Kyoto, Japan
| | - Takaya Kubo
- Research Center for Advanced Science and Technology, The University of Tokyo, Meguro-ku, Tokyo, Japan
| | - Hiroshi Segawa
- Research Center for Advanced Science and Technology, The University of Tokyo, Meguro-ku, Tokyo, Japan
| | - Qing Shen
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo, Japan
| | - Zeke Liu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China.
| | - Wanli Ma
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China.
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20
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Liu J, Xian K, Ye L, Zhou Z. Open-Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008115. [PMID: 34085736 DOI: 10.1002/adma.202008115] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2020] [Revised: 01/09/2021] [Indexed: 06/12/2023]
Abstract
Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (Voc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high Voc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the Voc loss is first analyzed via detailed balance theory and the origin of Voc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the Voc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the Voc loss are summarized. Finally, various strategies are discussed to reduce interface Voc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.
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Affiliation(s)
- Junwei Liu
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
- Tianjin Key Laboratory of Indoor Air Environmental Quality Control, School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Kaihu Xian
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Long Ye
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Zhihua Zhou
- Tianjin Key Laboratory of Indoor Air Environmental Quality Control, School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, China
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21
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Chen Z, Zhang Y, Teh ZL, Yang J, Yuan L, Conibeer GJ, Patterson RJ, Shen Q, Huang S, Zhang Z. Passivating Quantum Dot Carrier Transport Layer with Metal Salts. ACS APPLIED MATERIALS & INTERFACES 2021; 13:28679-28688. [PMID: 34101423 DOI: 10.1021/acsami.1c06410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Quantum dots (QDs) have a wide range of applications in the field of optoelectronics. They have been playing multiple roles within the configuration of a device, by serving as the building blocks for both the active layer and the carrier transport layer. While the performance of various optoelectronic devices has been steadily improving via developments in passivating the QD active layer, the possible improvement via passivation of the QD-based carrier transport layer has been largely overlooked. Here, with lead sulfide QD photovoltaics as the platform of study, we demonstrate that the device performance can be significantly improved by passivating the QD hole transport layer (HTL) with zinc salt post-treatments. The power conversion efficiency is improved from 8.7% of the reference device to 10.2% and 9.5% for devices with zinc acetate (ZnAc)- and zinc iodide (ZnI2)-treated HTLs, respectively. Transient absorption spectroscopy confirms that both treatments effectively reduce band-tail states and increase carrier lifetime of the HTLs. Further elemental analysis shows that ZnAc provides a higher amount of Zn2+ for passivation while maintaining the function of HTL by allowing essential p-doping oxidation. In contrast, the additional I- passivation from ZnI2 inhibits p-doping oxidation and limits the function of HTL. This work demonstrates the potential of improving device performance by passivating the QD-based HTLs, and the method developed is likely applicable to other optoelectronic devices.
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Affiliation(s)
- Zihan Chen
- Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
| | - Yaohong Zhang
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan
- School of Physics, Northwest University, Xi'an Bai North Road No. 229, Xi'an 710069, China
| | - Zhi Li Teh
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
| | - Jianfeng Yang
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
| | - Lin Yuan
- School of Engineering, Macquarie University Sustainable Energy Research Centre, Macquarie University, Sydney, New South Wales 2109, Australia
| | - Gavin J Conibeer
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
| | - Robert J Patterson
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
| | - Qing Shen
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan
| | - Shujuan Huang
- School of Engineering, Macquarie University Sustainable Energy Research Centre, Macquarie University, Sydney, New South Wales 2109, Australia
| | - Zhilong Zhang
- Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
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22
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Liu S, Xiong K, Wang K, Liang G, Li MY, Tang H, Yang X, Huang Z, Lian L, Tan M, Wang K, Gao L, Song H, Zhang D, Gao J, Lan X, Tang J, Zhang J. Efficiently Passivated PbSe Quantum Dot Solids for Infrared Photovoltaics. ACS NANO 2021; 15:3376-3386. [PMID: 33512158 DOI: 10.1021/acsnano.0c10373] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Infrared (IR) solar cells are promising devices for significantly improving the power conversion efficiency of common solar cells by harvesting the low-energy IR photons. PbSe quantum dots (QDs) are superior IR photon absorbing materials due to their strong quantum confinement and thus strong interdot electronic coupling. However, the high chemical activity of PbSe QDs leads to etching and poor passivation in ligand exchange, resulting in a high trap-state density and a high open circuit voltage (VOC) deficit. Here we develop a hybrid ligand co-passivation strategy to simultaneously passivate the Pb and Se sites; that is, halide anions passivate the Pb sites and Cd cations passivate the Se sites. The cation and anion hybrid passivation substantially improves the quality of PbSe QD solids, giving rise to an excellent trap-state control and prolonged carrier lifetime. A high VOC and a high short circuit current density (JSC) are achieved simultaneously in the IR QD solar cells based on this hybrid ligand treatment. Finally, a IR-PCE of 1.31% under the 1100-nm-filtered solar illumination is achieved in the PbSe QD solar cells, which is the highest IR-PCE for PbSe QD IR solar cells at present. Additionally, the PbSe QD devices show a high external quantum efficiency of 80% at ∼1295 nm.
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Affiliation(s)
- Sisi Liu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Kao Xiong
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Kang Wang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Guijie Liang
- Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang, Hubei 441053, China
| | - Ming-Yu Li
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Haodong Tang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Xueyuan Boulevard 1088, Shenzhen 518055, China
| | - Xiaokun Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Zhen Huang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Linyuan Lian
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Manlin Tan
- Research Institute of Tsinghua University in Shenzhen, Shenzhen, Guangdong 518057, China
| | - Kai Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Xueyuan Boulevard 1088, Shenzhen 518055, China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Daoli Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Jianbo Gao
- Ultrafast Photophysics of Quantum Devices, Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
| | - Xinzheng Lan
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Jianbing Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
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23
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Efficient PbS Quantum Dot Solar Cells with Both Mg-Doped ZnO Window Layer and ZnO Nanocrystal Interface Passivation Layer. NANOMATERIALS 2021; 11:nano11010219. [PMID: 33467785 PMCID: PMC7830923 DOI: 10.3390/nano11010219] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2020] [Revised: 01/12/2021] [Accepted: 01/13/2021] [Indexed: 11/16/2022]
Abstract
In this paper, a Mg-doped ZnO (MZO) thin film is prepared by a simple solution process under ambient conditions and is used as the window layer for PbS solar cells due to a wide n-type bandgap. Moreover, a thin layer of ZnO nanocrystals (NCs) was deposited on the MZO to reduce carrier recombination at the interface for inverted PbS quantum dot solar cells with the configuration Indium Tin Oxides (ITO)/MZO/ZnO NC (w/o)/PbS/Au. The effect of film thickness and annealing temperature of MZO and ZnO NC on the performance of PbS quantum dot solar cells was investigated in detail. It was found that without the ZnO NC thin layer, the highest power conversion efficiency(PCE) of 5.52% was obtained in the case of a device with an MZO thickness of 50 nm. When a thin layer of ZnO NC was introduced between MZO and PbS quantum dot film, the PCE of the champion device was greatly improved to 7.06% due to the decreased interface recombination. The usage of the MZO buffer layer along with the ZnO NC interface passivation technique is expected to further improve the performance of quantum dot solar cells.
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24
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Liu Y, Shi G, Liu Z, Ma W. Toward printable solar cells based on PbX colloidal quantum dot inks. NANOSCALE HORIZONS 2021; 6:8-23. [PMID: 33174558 DOI: 10.1039/d0nh00488j] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Lead chalcogenide (PbX, X = S, Se) colloidal quantum dots (CQDs) are promising solution-processed semiconductor materials for the construction of low-cost, large-area, and flexible solar cells. The properties of CQDs endow them with advantages in semi-conducting film deposition compared to other solution-processed photovoltaic materials, which is critical for the fabrication of efficient large-area solar cells towards industrialization. However, the development of large-area CQD solar cells is impeded by the conventional solid-state ligand exchange process, where the tedious processing with high expense is indispensable to facilitate charge transport of CQD films for photovoltaic applications. In the past several years, the rapid development of CQD inks has boosted the device performance and dramatically simplified the fabrication process. The CQD inks are compatible with most of the industrialized printing techniques, demonstrating potential in fabricating solar modules for commercialization. This article aims to review the recent advances in solar cells based on PbX CQD inks, including both lab-scale and large-area photovoltaic devices prepared from solution-phase ligand exchange (SPLE) as well as the recently invented "one-step" synthesis. We expect to draw attention to the enormous potential of CQD inks for developing high-efficiency and low-cost large-area photovoltaics.
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Affiliation(s)
- Yang Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123 Jiangsu, P. R. China.
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25
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Hu L, Lei Q, Guan X, Patterson R, Yuan J, Lin C, Kim J, Geng X, Younis A, Wu X, Liu X, Wan T, Chu D, Wu T, Huang S. Optimizing Surface Chemistry of PbS Colloidal Quantum Dot for Highly Efficient and Stable Solar Cells via Chemical Binding. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2003138. [PMID: 33511019 PMCID: PMC7816699 DOI: 10.1002/advs.202003138] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2020] [Revised: 09/17/2020] [Indexed: 05/31/2023]
Abstract
The surface chemistry of colloidal quantum dots (CQD) play a crucial role in fabricating highly efficient and stable solar cells. However, as-synthesized PbS CQDs are significantly off-stoichiometric and contain inhomogeneously distributed S and Pb atoms at the surface, which results in undercharged Pb atoms, dangling bonds of S atoms and uncapped sites, thus causing surface trap states. Moreover, conventional ligand exchange processes cannot efficiently eliminate these undesired atom configurations and defect sites. Here, potassium triiodide (KI3) additives are combined with conventional PbX2 matrix ligands to simultaneously eliminate the undercharged Pb species and dangling S sites via reacting with molecular I2 generated from the reversible reaction KI3 ⇌ I2 + KI. Meanwhile, high surface coverage shells on PbS CQDs are built via PbX2 and KI ligands. The implementation of KI3 additives remarkably suppresses the surface trap states and enhances the device stability due to the surface chemistry optimization. The resultant solar cells achieve the best power convention efficiency of 12.1% and retain 94% of its initial efficiency under 20 h continuous operation in air, while the control devices with KI additive deliver an efficiency of 11.0% and retains 87% of their initial efficiency under the same conditions.
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Affiliation(s)
- Long Hu
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
- School of EngineeringMacquarie University Sustainable Energy Research CentreMacquarie UniversitySydneyNSW2109Australia
| | - Qi Lei
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Xinwei Guan
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Robert Patterson
- School of Photovoltaics and Renewable Energy EngineeringUniversity of New South WalesSydney2019Australia
| | - Jianyu Yuan
- Institute of Functional Nano and Soft Materials (FUNSOM)Soochow UniversitySuzhouJiangsu215123China
| | - Chun‐Ho Lin
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Jiyun Kim
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Xun Geng
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Adnan Younis
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Xianxin Wu
- Division of Nanophotonics CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and TechnologyBeijing100190P. R. China
| | - Xinfeng Liu
- Division of Nanophotonics CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and TechnologyBeijing100190P. R. China
| | - Tao Wan
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Dewei Chu
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Tom Wu
- School of Materials Science and EngineeringUniversity of New South Wales (UNSW)SydneyNSW2052Australia
| | - Shujuan Huang
- School of EngineeringMacquarie University Sustainable Energy Research CentreMacquarie UniversitySydneyNSW2109Australia
- School of Photovoltaics and Renewable Energy EngineeringUniversity of New South WalesSydney2019Australia
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26
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Abstract
Infrared PbS colloidal quantum dot (CQD)-based materials receive significant attention because of its unique properties. The PbS CQD ink that originates from ligand exchange of CQDs is highly potential for efficient and stable infrared CQD solar cells (CQDSCs) using low-temperature solution-phase processing. In this review, we present a comprehensive overview of CQD inks for the development of efficient infrared solar cells, which can effectively harvest the photons from the infrared wavelength region of the solar spectrum, including the importance of infrared absorbers for solar cells, the unique properties of CQDs, ligand-exchange determined CQD inks, and related photovoltaic performance of CQDSCs. Finally, we present a brief conclusion, and the possible challenges and opportunities of the CQD inks are discussed in-depth to further develop highly efficient and stable infrared solar cells.
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Affiliation(s)
- Siyu Zheng
- School of Materials Science and Engineering, Beihang University, 100191 Beijing, China
| | - Jingxuan Chen
- School of Materials Science and Engineering, Beihang University, 100191 Beijing, China
| | - Erik M J Johansson
- Department of Chemistry-Ångström, Physical Chemistry, Uppsala University, 75120 Uppsala, Sweden
| | - Xiaoliang Zhang
- School of Materials Science and Engineering, Beihang University, 100191 Beijing, China
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27
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Kim T, Lim S, Yun S, Jeong S, Park T, Choi J. Design Strategy of Quantum Dot Thin-Film Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2002460. [PMID: 33079485 DOI: 10.1002/smll.202002460] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2020] [Revised: 07/28/2020] [Indexed: 06/11/2023]
Abstract
Quantum dots (QDs) are emerging photovoltaic materials that display exclusive characteristics that can be adjusted through modification of their size and surface chemistry. However, designing a QD-based optoelectronic device requires specialized approaches compared with designing conventional bulk-based solar cells. In this paper, design considerations for QD thin-film solar cells are introduced from two different viewpoints: optics and electrics. The confined energy level of QDs contributes to the adjustment of their band alignment, enabling their absorption characteristics to be adapted to a specific device purpose. However, the materials selected for this energy adjustment can increase the light loss induced by interface reflection. Thus, management of the light path is important for optical QD solar cell design, whereas surface modification is a crucial issue for the electrical design of QD solar cells. QD thin-film solar cell architectures are fabricated as a heterojunction today, and ligand exchange provides suitable doping states and enhanced carrier transfer for the junction. Lastly, the stability issues and methods on QD thin-film solar cells are surveyed. Through these strategies, a QD solar cell study can provide valuable insights for future-oriented solar cell technology.
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Affiliation(s)
- Taewan Kim
- Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
- Department of Energy Science and Center for Artificial Atoms, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Seyeong Lim
- Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Sunhee Yun
- Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Sohee Jeong
- Department of Energy Science and Center for Artificial Atoms, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Taiho Park
- Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Jongmin Choi
- Energy Science & Engineering, Daegu Gyeongbuk Institute of Science and Technology, Daegu, 42988, Republic of Korea
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Liu S, Hu L, Huang S, Zhang W, Ma J, Wang J, Guan X, Lin CH, Kim J, Wan T, Lei Q, Chu D, Wu T. Enhancing the Efficiency and Stability of PbS Quantum Dot Solar Cells through Engineering an Ultrathin NiO Nanocrystalline Interlayer. ACS APPLIED MATERIALS & INTERFACES 2020; 12:46239-46246. [PMID: 32929953 DOI: 10.1021/acsami.0c14332] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Significant progress in PbS quantum dot solar cells has been achieved through designing device architecture, engineering band alignment, and optimizing the surface chemistry of colloidal quantum dots (CQDs). However, developing a highly stable device while maintaining the desirable efficiency is still a challenging issue for these emerging solar cells. In this study, by introducing an ultrathin NiO nanocrystalline interlayer between Au electrodes and the hole-transport layer of the PbS-EDT, the resulting PbS CQD solar cell efficiency is improved from 9.3 to 10.4% because of the improved hole-extraction efficiency. More excitingly, the device stability is significantly enhanced owing to the passivation effect of the robust NiO nanocrystalline interlayer. The solar cells with the NiO nanocrystalline interlayer retain 95 and 97% of the initial efficiency when heated at 80 °C for 120 min and treated with oxygen plasma irradiation for 60 min, respectively. In contrast, the control devices without the NiO nanocrystalline interlayer retain only 75 and 63% of the initial efficiency under the same testing conditions.
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Affiliation(s)
- Shanqin Liu
- School of Chemistry and Chemical Engineering, Henan Institute of Science and Technology, Xinxiang 453003, Henan, P. R. China
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
- School of Engineering, Macquarie University Sustainable Energy Research Centre, Macquarie University, Sydney, NSW 2109, Australia
| | - Shujuan Huang
- School of Engineering, Macquarie University Sustainable Energy Research Centre, Macquarie University, Sydney, NSW 2109, Australia
| | - Wanqing Zhang
- School of Chemistry and Chemical Engineering, Henan Institute of Science and Technology, Xinxiang 453003, Henan, P. R. China
| | - Jingjing Ma
- School of Chemistry and Chemical Engineering, Henan Institute of Science and Technology, Xinxiang 453003, Henan, P. R. China
| | - Jichao Wang
- School of Chemistry and Chemical Engineering, Henan Institute of Science and Technology, Xinxiang 453003, Henan, P. R. China
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Jiyun Kim
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Tao Wan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Qi Lei
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Dewei Chu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
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Yang X, Yang J, Ullah MI, Xia Y, Liang G, Wang S, Zhang J, Hsu HY, Song H, Tang J. Enhanced Passivation and Carrier Collection in Ink-Processed PbS Quantum Dot Solar Cells via a Supplementary Ligand Strategy. ACS APPLIED MATERIALS & INTERFACES 2020; 12:42217-42225. [PMID: 32805951 DOI: 10.1021/acsami.0c08135] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Solution-processed semiconductors have opened promising avenues for next-generation semiconductor and optoelectronic industries. Colloidal quantum dots (QDs) as one of the most typical materials are widely utilized for the design and development of light-emitting diodes, photodetectors, and solar cells. Recently, an emerging process of PbS QD ink has been employed to attain world record power conversion efficiency by surface passivation using a PbI2 ligand to form PbI2-PbS and the process optimization in the field of photovoltaics. However, the bonding and debonding of the ligands on the surface of PbS QDs are dynamic reversible processes in an ink environment. The uncoordinated Pb2+ defects induced by unbonded PbS QDs serve as the recombination sites. Thus, the present ink process leaves much room for the enhancement by surface passivation of PbS QDs. Herein, we devise an efficient strategy with a supplementary phenethylammonium iodide (PEAI) ligand for the formation of the PEAI-PbS interface in PbS QD ink-processed solar cells. This newly developed method can not only improve the passivation on the QD surface by iodine ions but also simultaneously enhance the carrier collection efficiency by a graded energy alignment between PbI2-PbS and PEAI-PbS layers. The corresponding power conversion efficiency of the optimized device has significantly increased by approximately 20% more than the control device. As a result, such a robust and efficient method regarded as a strategic candidate can overcome the bottleneck of imperfect passivation caused by a large specific surface area and loose bonding ligands, eventually promoting the industrial application of QDs.
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Affiliation(s)
- Xiaokun Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Ji Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Muhammad Irfan Ullah
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Yong Xia
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074, P. R. China
| | - Guijie Liang
- Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang, Hubei 441053, P. R. China
| | - Song Wang
- Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang, Hubei 441053, P. R. China
| | - Jianbing Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074, P. R. China
| | - Hsien-Yi Hsu
- School of Energy and Environment & Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong 999077, China
- Shenzhen Research Institute of City University of Hong Kong, Shenzhen 518057, China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, P. R. China
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Chen K, Wang C, Peng Z, Qi K, Guo Z, Zhang Y, Zhang H. The chemistry of colloidal semiconductor nanocrystals: From metal-chalcogenides to emerging perovskite. Coord Chem Rev 2020. [DOI: 10.1016/j.ccr.2020.213333] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Tom AE, Thomas A, Ison VV. Novel post-synthesis purification strategies and the ligand exchange processes in simplifying the fabrication of PbS quantum dot solar cells. RSC Adv 2020; 10:30707-30715. [PMID: 35516046 PMCID: PMC9056350 DOI: 10.1039/d0ra05242f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2020] [Accepted: 08/12/2020] [Indexed: 11/21/2022] Open
Abstract
Quantum dots (QDs) solids with iodide passivation are a key component for most of the well-performing PbS QDs solar cells. Usually, iodide passivation of oleic acid (OA) capped PbS QDs films is achieved by a solid-state ligand exchange process using tetrabutylammonium iodide (TBAI). This ligand exchange process has generally been reported to be incomplete, especially in higher thicknesses, affecting the properties of the films adversely, producing inconsistent results in the device structures fabricated. The present study is based on a systematic investigation of the TBAI exchange on PbS QDs films and the performance of the resulting solar cells. We could achieve a complete TBAI exchange in a sufficiently thick (∼240 nm) and dense QDs film deposited by a minimum number of coating steps, through the optimization of the number of post-synthesis washing cycles on the QDs. Detailed studies were carried out investigating the effect of the number of washing cycles on the quantity of OA before and after the exchange, the ligand exchange efficiency, the development of trap states and the resulting photovoltaic device performance. A power conversion efficiency of 5.55% was obtained for a device subjected to an optimum number of washing cycles. Quantum dots (QDs) solids with iodide passivation are a key component for most of the well-performing PbS QDs solar cells.![]()
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Affiliation(s)
- Anju Elsa Tom
- Centre for Nano-Bio-Polymer Science and Technology, Research and PG Department of Physics, St. Thomas College Palai Kerala-686574 India +919446126926
| | - Ajith Thomas
- Centre for Nano-Bio-Polymer Science and Technology, Research and PG Department of Physics, St. Thomas College Palai Kerala-686574 India +919446126926.,Research and Development Centre, Bharathiar University Coimbatore Tamil Nadu-641046 India
| | - V V Ison
- Centre for Nano-Bio-Polymer Science and Technology, Research and PG Department of Physics, St. Thomas College Palai Kerala-686574 India +919446126926
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Durmusoglu EG, Selopal GS, Mohammadnezhad M, Zhang H, Dagtepe P, Barba D, Sun S, Zhao H, Acar HY, Wang ZM, Rosei F. Low-Cost, Air-Processed Quantum Dot Solar Cells via Diffusion-Controlled Synthesis. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36301-36310. [PMID: 32666797 DOI: 10.1021/acsami.0c06694] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Despite significant advances in the development of high-efficiency and stable quantum dot (QD) solar cells (QDSCs), recent synthetic and fabrication routes still require improvements to render QDSCs commercially feasible. Here, we describe a low-cost, industrially viable fabrication method of QDSCs under an ambient atmosphere (humid air and room temperature) using stable, high-quality, and small-sized PbS QDs prepared with low-cost, greener precursors [i.e., thioacetamide (TAA)] compared to the widely used bis(trimethylsilyl)sulfide [(TMS)2S], at low temperatures without requiring any stringent conditions. The low reaction temperature, medium reactivity of TAA, and diffusion-controlled particle growth adopted in this approach provide an opportunity to synthesize ultrasmall (emission peak ∼700 nm) to larger PbS QDs (emission peak ∼1050 nm). This also enables well-controlled large-scale (multigram) synthesis with a rough estimated production cost of PbS of 8.11 $ per gram (based on materials cost), which is the lowest among the available PbS QDs produced using wet chemistry routes. QDSCs fabricated using 3.25 nm PbS QDs (bandgap 1.29 eV) under ambient conditions yield a high circuit current density (Jsc) of 32.4 mA/cm2 (one of the highest values of Jsc ever reported) with a power conversion efficiency of 7.8% under 1 sun simulated sunlight at AM 1.5 G (100 mW/cm2). These devices exhibit better photovoltaic performance compared to devices fabricated with more traditional PbS QDs synthesized with (TMS)2S under an ambient atmosphere, confirming the quality of PbS QDs produced with our method. The diffusion-controlled TAA-based synthetic route developed herein is found to be very promising for synthesizing size-tunable PbS QDs for photovoltaic and other optoelectronic applications.
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Affiliation(s)
- Emek G Durmusoglu
- Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, J3X 1S2 Varennes, Québec, Canada
| | - Gurpreet S Selopal
- Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, J3X 1S2 Varennes, Québec, Canada
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Mahyar Mohammadnezhad
- Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, J3X 1S2 Varennes, Québec, Canada
| | - Hui Zhang
- Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, J3X 1S2 Varennes, Québec, Canada
| | - Pinar Dagtepe
- Department of Chemistry, Koc University, Rumelifeneri Yolu, Sariyer, Istanbul 34450, Turkey
| | - David Barba
- Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, J3X 1S2 Varennes, Québec, Canada
| | - Shuhui Sun
- Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, J3X 1S2 Varennes, Québec, Canada
| | - Haiguang Zhao
- College of Physics & The State Key Laboratory of Bio-Fibers and Eco-Textiles, Qingdao University, No. 308 Ningxia Road, Qingdao 266071, PR China
| | - Havva Yağcı Acar
- Department of Chemistry, Koc University, Rumelifeneri Yolu, Sariyer, Istanbul 34450, Turkey
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Federico Rosei
- Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, J3X 1S2 Varennes, Québec, Canada
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Aqueous-processed insulating polymer/nanocrystal solar cells with effective suppression of the leakage current and carrier recombination. CHINESE CHEM LETT 2020. [DOI: 10.1016/j.cclet.2019.08.024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register]
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34
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Sun B, Vafaie M, Levina L, Wei M, Dong Y, Gao Y, Kung HT, Biondi M, Proppe AH, Chen B, Choi MJ, Sagar LK, Voznyy O, Kelley SO, Laquai F, Lu ZH, Hoogland S, García de Arquer FP, Sargent EH. Ligand-Assisted Reconstruction of Colloidal Quantum Dots Decreases Trap State Density. NANO LETTERS 2020; 20:3694-3702. [PMID: 32227970 DOI: 10.1021/acs.nanolett.0c00638] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Increasing the power conversion efficiency (PCE) of colloidal quantum dot (CQD) solar cells has relied on improving the passivation of CQD surfaces, enhancing CQD coupling and charge transport, and advancing device architecture. The presence of hydroxyl groups on the nanoparticle surface, as well as dimers-fusion between CQDs-has been found to be the major source of trap states, detrimental to optoelectronic properties and device performance. Here, we introduce a CQD reconstruction step that decreases surface hydroxyl groups and dimers simultaneously. We explored the dynamic interaction of charge carriers between band-edge states and trap states in CQDs using time-resolved spectroscopy, showing that trap to ground-state recombination occurs mainly from surface defects in coupled CQD solids passivated using simple metal halides. Using CQD reconstruction, we demonstrate a 60% reduction in trap density and a 25% improvement in charge diffusion length. These translate into a PCE of 12.5% compared to 10.9% for control CQDs.
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Affiliation(s)
- Bin Sun
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Larissa Levina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Mingyang Wei
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Yitong Dong
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Yajun Gao
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Hao Ting Kung
- Department of Material Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4, Canada
| | - Margherita Biondi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Andrew H Proppe
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
- Department of Chemistry, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Bin Chen
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Min-Jae Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Laxmi Kishore Sagar
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Oleksandr Voznyy
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Shana O Kelley
- Department of Pharmaceutical Science, Leslie Dan Faculty of Pharmacy, University of Toronto, Toronto, Ontario M5S 3G4, Canada
- Department of Chemistry, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Frédéric Laquai
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Zheng-Hong Lu
- Department of Material Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
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Biondi M, Choi MJ, Ouellette O, Baek SW, Todorović P, Sun B, Lee S, Wei M, Li P, Kirmani AR, Sagar LK, Richter LJ, Hoogland S, Lu ZH, García de Arquer FP, Sargent EH. A Chemically Orthogonal Hole Transport Layer for Efficient Colloidal Quantum Dot Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1906199. [PMID: 32196136 DOI: 10.1002/adma.201906199] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2019] [Revised: 01/25/2020] [Indexed: 06/10/2023]
Abstract
Colloidal quantum dots (CQDs) are of interest in light of their solution-processing and bandgap tuning. Advances in the performance of CQD optoelectronic devices require fine control over the properties of each layer in the device materials stack. This is particularly challenging in the present best CQD solar cells, since these employ a p-type hole-transport layer (HTL) implemented using 1,2-ethanedithiol (EDT) ligand exchange on top of the CQD active layer. It is established that the high reactivity of EDT causes a severe chemical modification to the active layer that deteriorates charge extraction. By combining elemental mapping with the spatial charge collection efficiency in CQD solar cells, the key materials interface dominating the subpar performance of prior CQD PV devices is demonstrated. This motivates to develop a chemically orthogonal HTL that consists of malonic-acid-crosslinked CQDs. The new crosslinking strategy preserves the surface chemistry of the active layer beneath, and at the same time provides the needed efficient charge extraction. The new HTL enables a 1.4× increase in charge carrier diffusion length in the active layer; and as a result leads to an improvement in power conversion efficiency to 13.0% compared to EDT standard cells (12.2%).
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Affiliation(s)
- Margherita Biondi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Min-Jae Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Olivier Ouellette
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Se-Woong Baek
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Petar Todorović
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Bin Sun
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Mingyang Wei
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Peicheng Li
- Department of Material Science and Engineering, University of Toronto, 184 College St, Toronto, Ontario, M5S 3E4, Canada
| | - Ahmad R Kirmani
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA
| | - Laxmi K Sagar
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Lee J Richter
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Zheng-Hong Lu
- Department of Material Science and Engineering, University of Toronto, 184 College St, Toronto, Ontario, M5S 3E4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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Shen Y, Yin J, Cai B, Wang Z, Dong Y, Xu X, Zeng H. Lead-free, stable, high-efficiency (52%) blue luminescent FA 3Bi 2Br 9 perovskite quantum dots. NANOSCALE HORIZONS 2020; 5:580-585. [PMID: 32118235 DOI: 10.1039/c9nh00685k] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Lead halide perovskites are promising candidates as next-generation emitting materials for lighting and displays due to their superior properties. However, the toxicity of lead content severely limits their practical applications. Although lead-free Sn-based and Bi-based perovskites (Cs3Bi2Br9, MA3Bi2Br9) are reported, they all suffer from low photoluminescence quantum yield (PLQY). Here, we report the synthesis of lead-free FA3Bi2Br9 perovskite quantum dots (QDs) and their optical characterization. Through a facile ligand-assisted solution process, the as-synthesized FA3Bi2Br9 QDs exhibit a bright blue emission at 437 nm with a high PLQY of 52%. As to the origins, the observed high exciton binding energy (274.6 meV), direct bandgap nature and low defect density are proposed to guarantee the exciton generation and efficient radiative recombination. Besides, the FA3Bi2Br9 QDs show a good air stability and ethanol stability. A lead-free perovskite blue light-emitting diodes (LED) was successfully fabricated by combining FA3Bi2Br9 QDs/PS composites with a UV light chip. Our results highlight the potential of lead-free perovskites for applications in light-emitting devices.
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Affiliation(s)
- Yalong Shen
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
| | - Jun Yin
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Bo Cai
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
| | - Ziming Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
| | - Yuhang Dong
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
| | - Xiaobao Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
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Albaladejo-Siguan M, Becker-Koch D, Taylor AD, Sun Q, Lami V, Oppenheimer PG, Paulus F, Vaynzof Y. Efficient and Stable PbS Quantum Dot Solar Cells by Triple-Cation Perovskite Passivation. ACS NANO 2020; 14:384-393. [PMID: 31721556 DOI: 10.1021/acsnano.9b05848] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Solution-processed quantum dots (QDs) have a high potential for fabricating low-cost, flexible, and large-scale solar energy harvesting devices. It has recently been demonstrated that hybrid devices employing a single monovalent cation perovskite solution for PbS QD surface passivation exhibit enhanced photovoltaic performance when compared to standard ligand passivation. Herein, we demonstrate that the use of a triple cation Cs0.05(MA0.17FA0.83)0.95Pb(I0.9Br0.1)3 perovskite composition for surface passivation of the quantum dots results in highly efficient solar cells, which maintain 96% of their initial performance after 1200 h shelf storage. We confirm perovskite shell formation around the PbS nanocrystals by a range of spectroscopic techniques as well as high-resolution transmission electron microscopy. We find that the triple cation shell results in a favorable energetic alignment to the core of the dot, resulting in reduced recombination due to charge confinement without limiting transport in the active layer. Consequently, photovoltaic devices fabricated via a single-step film deposition reached a maximum AM1.5G power conversion efficiency of 11.3% surpassing most previous reports of PbS solar cells employing perovskite passivation.
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Affiliation(s)
- Miguel Albaladejo-Siguan
- Kirchhoff Institute for Physics, Heidelberg University , Im Neuenheimer Feld 227 , 69120 Heidelberg , Germany
- Integrated Centre for Applied Physics and Photonic Materials and Centre for Advancing Electronics Dresden (cfaed) , Technical University of Dresden , Nöthnitzer Straße 61 , 01187 Dresden , Germany
| | - David Becker-Koch
- Kirchhoff Institute for Physics, Heidelberg University , Im Neuenheimer Feld 227 , 69120 Heidelberg , Germany
- Integrated Centre for Applied Physics and Photonic Materials and Centre for Advancing Electronics Dresden (cfaed) , Technical University of Dresden , Nöthnitzer Straße 61 , 01187 Dresden , Germany
| | - Alexander D Taylor
- Kirchhoff Institute for Physics, Heidelberg University , Im Neuenheimer Feld 227 , 69120 Heidelberg , Germany
- Integrated Centre for Applied Physics and Photonic Materials and Centre for Advancing Electronics Dresden (cfaed) , Technical University of Dresden , Nöthnitzer Straße 61 , 01187 Dresden , Germany
| | - Qing Sun
- Kirchhoff Institute for Physics, Heidelberg University , Im Neuenheimer Feld 227 , 69120 Heidelberg , Germany
| | - Vincent Lami
- Kirchhoff Institute for Physics, Heidelberg University , Im Neuenheimer Feld 227 , 69120 Heidelberg , Germany
| | - Pola Goldberg Oppenheimer
- School of Biochemical Engineering , University of Birmingham , Edgbaston , Birmingham , West Midlands B15 2TT , United Kingdom
| | - Fabian Paulus
- Kirchhoff Institute for Physics, Heidelberg University , Im Neuenheimer Feld 227 , 69120 Heidelberg , Germany
- Integrated Centre for Applied Physics and Photonic Materials and Centre for Advancing Electronics Dresden (cfaed) , Technical University of Dresden , Nöthnitzer Straße 61 , 01187 Dresden , Germany
| | - Yana Vaynzof
- Kirchhoff Institute for Physics, Heidelberg University , Im Neuenheimer Feld 227 , 69120 Heidelberg , Germany
- Integrated Centre for Applied Physics and Photonic Materials and Centre for Advancing Electronics Dresden (cfaed) , Technical University of Dresden , Nöthnitzer Straße 61 , 01187 Dresden , Germany
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Yang X, Yang J, Khan J, Deng H, Yuan S, Zhang J, Xia Y, Deng F, Zhou X, Umar F, Jin Z, Song H, Cheng C, Sabry M, Tang J. Hydroiodic Acid Additive Enhanced the Performance and Stability of PbS-QDs Solar Cells via Suppressing Hydroxyl Ligand. NANO-MICRO LETTERS 2020; 12:37. [PMID: 34138233 PMCID: PMC7770827 DOI: 10.1007/s40820-020-0372-z] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2019] [Accepted: 12/25/2019] [Indexed: 05/03/2023]
Abstract
The recent emerging progress of quantum dot ink (QD-ink) has overcome the complexity of multiple-step colloidal QD (CQD) film preparation and pronouncedly promoted the device performance. However, the detrimental hydroxyl (OH) ligands induced from synthesis procedure have not been completely removed. Here, a halide ligand additive strategy was devised to optimize QD-ink process. It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface, which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances. The corresponding power conversion efficiency of this optimized device reached 10.78%. (The control device was 9.56%.) Therefore, this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands, which is also compatible with other CQD-based optoelectronic devices.
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Affiliation(s)
- Xiaokun Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
- Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen, 518055, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen, 518000, People's Republic of China
| | - Ji Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Jahangeer Khan
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Hui Deng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen, 518000, People's Republic of China
| | - Shengjie Yuan
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen, 518000, People's Republic of China
| | - Jian Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Yong Xia
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, People's Republic of China
| | - Feng Deng
- National Center for Magnetic Resonance in Wuhan, State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan, 430071, People's Republic of China
| | - Xue Zhou
- National Center for Magnetic Resonance in Wuhan, State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan, 430071, People's Republic of China
| | - Farooq Umar
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Zhixin Jin
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
- Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen, 518055, People's Republic of China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China.
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen, 518000, People's Republic of China.
| | - Chun Cheng
- Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen, 518055, People's Republic of China.
| | - Mohamed Sabry
- Physics Department, College of Applied Science, Umm Al-Qura University, Mecca, Kingdom of Saudi Arabia
- Solar Physics Lab, National Research Institute of Astronomy and Geophysics, Cairo, Egypt
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen, 518000, People's Republic of China
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Zhang Y, Wu G, Liu F, Ding C, Zou Z, Shen Q. Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices. Chem Soc Rev 2020; 49:49-84. [PMID: 31825404 DOI: 10.1039/c9cs00560a] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
Abstract
The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.
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Affiliation(s)
- Yaohong Zhang
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan.
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Babaev AA, Parfenov PS, Onishchuk DA, Dubavik A, Cherevkov SA, Rybin AV, Baranov MA, Baranov AV, Litvin AP, Fedorov AV. Functionalized rGO Interlayers Improve the Fill Factor and Current Density in PbS QDs-Based Solar Cells. MATERIALS (BASEL, SWITZERLAND) 2019; 12:E4221. [PMID: 31888184 PMCID: PMC6947317 DOI: 10.3390/ma12244221] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2019] [Revised: 12/09/2019] [Accepted: 12/11/2019] [Indexed: 11/16/2022]
Abstract
Graphene-quantum dot nanocomposites attract significant attention for novel optoelectronic devices, such as ultrafast photodetectors and third-generation solar cells. Combining the remarkable optical properties of quantum dots (QDs) with the exceptional electrical properties of graphene derivatives opens a vast perspective for further growth in solar cell efficiency. Here, we applied (3-mercaptopropyl) trimethoxysilane functionalized reduced graphene oxide (f-rGO) to improve the QDs-based solar cell active layer. The different strategies of f-rGO embedding are explored. When f-rGO interlayers are inserted between PbS QD layers, the solar cells demonstrate a higher current density and a better fill factor. A combined study of the morphological and electrical parameters of the solar cells shows that the improved efficiency is associated with better layer homogeneity, lower trap-state densities, higher charge carrier concentrations, and the blocking of the minor charge carriers.
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Affiliation(s)
- Anton A. Babaev
- Center of Information optical technology, ITMO University, 197101 St. Petersburg, Russia; (P.S.P.); (D.A.O.); (A.D.); (S.A.C.); (A.V.R.); (M.A.B.); (A.V.B.); (A.P.L.); (A.V.F.)
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41
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Room-temperature direct synthesis of semi-conductive PbS nanocrystal inks for optoelectronic applications. Nat Commun 2019; 10:5136. [PMID: 31723126 PMCID: PMC6853884 DOI: 10.1038/s41467-019-13158-6] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/23/2019] [Accepted: 09/30/2019] [Indexed: 11/23/2022] Open
Abstract
Lead sulphide (PbS) nanocrystals (NCs) are promising materials for low-cost, high-performance optoelectronic devices. So far, PbS NCs have to be first synthesized with long-alkyl chain organic surface ligands and then be ligand-exchanged with shorter ligands (two-steps) to enable charge transport. However, the initial synthesis of insulated PbS NCs show no necessity and the ligand-exchange process is tedious and extravagant. Herein, we have developed a direct one-step, scalable synthetic method for iodide capped PbS (PbS-I) NC inks. The estimated cost for PbS-I NC inks is decreased to less than 6 $·g−1, compared with 16 $·g−1 for conventional methods. Furthermore, based on these PbS-I NCs, photodetector devices show a high detectivity of 1.4 × 1011Jones and solar cells show an air-stable power conversion efficiency (PCE) up to 10%. This scalable and low-cost direct preparation of high-quality PbS-I NC inks may pave a path for the future commercialization of NC based optoelectronics. Providing large-scale iodide capped semi-conductive PbS nanocrystals inks preparation for high-throughput manufacturing remains a challenge. Here, the authors propose a direct one step and scalable synthesis method enabling cost reduction and promoting its commercial viability for solar cells.
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42
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Park SY, Han S, Kim Y, Jung S, Kim DH, Han GS, Jung HS. Ultimate Charge Extraction of Monolayer PbS Quantum Dot for Observation of Multiple Exciton Generation. Chemphyschem 2019; 20:2657-2661. [PMID: 31410971 DOI: 10.1002/cphc.201900381] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2019] [Revised: 07/17/2019] [Indexed: 11/06/2022]
Abstract
Multiple exciton generation (MEG) has great potential to improve the Shockley-Queisser (S-Q) efficiency limitation for colloidal quantum dot (CQD) solar cells. However, MEG has rarely been observed in CQD solar cells because of the loss of carriers through the transport mechanism between adjacent QDs. Herein, we demonstrate that excess charge carriers produced via MEG can be efficiently extracted using monolayer PbS QDs. The monolayer PbS QDs solar cells exhibit α=1 in the light intensity dependence of the short-circuit current density Jsc (Jsc ∝Iα ) and an internal quantum efficiency (IQE) value of 100 % at 2.95 eV because of their very short charge extraction path. In addition, the measured MEG threshold is 2.23 times the bandgap energy (Eg ), which is the lowest value in PbS QD solar cells. We believe that this approach can provide a simple method to find suitable CQD materials and design interface engineering for MEG.
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Affiliation(s)
- So-Yeon Park
- School of Advanced Materials & Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Sehoon Han
- School of Advanced Materials & Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Younghoon Kim
- Convergence Research Center for Solar Energy Convergence Research Institute, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 72988, Republic of Korea
| | - Sohee Jung
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Dong Hoe Kim
- Department of Nanotechnology & Advanced Materials Engineering Sejong University, Seoul, 05006, Republic of Korea
| | - Gill Sang Han
- School of Advanced Materials & Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Hyun Suk Jung
- School of Advanced Materials & Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
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43
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Woo HK, Kang MS, Park T, Bang J, Jeon S, Lee WS, Ahn J, Cho G, Ko DK, Kim Y, Ha DH, Oh SJ. Colloidal-annealing of ZnO nanoparticles to passivate traps and improve charge extraction in colloidal quantum dot solar cells. NANOSCALE 2019; 11:17498-17505. [PMID: 31532437 DOI: 10.1039/c9nr06346c] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The popularity of colloidal quantum dot (CQD) solar cells has increased owing to their tunable bandgap, multiple exciton generation, and low-cost solution processes. ZnO nanoparticle (NP) layers are generally employed as electron transport layers in CQD solar cells to efficiently extract the electrons. However, trap sites and the unfavorable band structure of the as-synthesized ZnO NPs have hindered their potential performance. Herein, we introduce a facile method of ZnO NP annealing in the colloidal state. Electrical, structural, and optical analyses demonstrated that the colloidal-annealing of ZnO NPs effectively passivated the defects and simultaneously shifted their band diagram; therefore, colloidal-annealing is a more favorable method as compared to conventional film-annealing. These CQD solar cells based on colloidal-annealed ZnO NPs exhibited efficient charge extraction, reduced recombination and achieved an enhanced power conversion efficiency (PCE) of 9.29%, whereas the CQD solar cells based on ZnO NPs without annealing had a PCE of 8.05%. Moreover, the CQD solar cells using colloidal-annealed ZnO NPs exhibited an improved air stability with 98% retention after 120 days, as compared to that of CQD solar cells using non-annealed ZnO NPs with 84% retention.
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Affiliation(s)
- Ho Kun Woo
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Min Su Kang
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Taesung Park
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Junsung Bang
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Sanghyun Jeon
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Woo Seok Lee
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Junhyuk Ahn
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Geonhee Cho
- School of Integrative Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Dong-Kyun Ko
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA
| | - Younghoon Kim
- Convergence Research Center for Solar Energy, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-Daero, Hyeonpung, Daegu 42988, Korea
| | - Don-Hyung Ha
- School of Integrative Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
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Yang J, Lee J, Lee J, Yi W. Improving Charge Collection from Colloidal Quantum Dot Photovoltaics by Single-Walled Carbon Nanotube Incorporation. ACS APPLIED MATERIALS & INTERFACES 2019; 11:33759-33769. [PMID: 31430430 DOI: 10.1021/acsami.9b07089] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Improving charge collection is one of the key issues for high-performance PbS colloidal quantum dot photovoltaics (CQDPVs) due to the considerable charge loss resulting from the low mobility and large defect densities of the 1,2-ethanedithiol-treated PbS quantum dot hole-transporting layer (HTL). To overcome these limitations, single-walled carbon nanotubes (SWNTs) and C60-encapsulated SWNTs (C60@SWNTs) are incorporated into the HTL in CQDPVs. SWNT-incorporated CQDPV demonstrates a significantly improved short-circuit current density (JSC), and C60@SWNT-incorporated CQDPV exhibits an even higher JSC than that of pristine SWNT. Both result in improved power-conversion efficiencies. Hole-selective, photoinduced charge extraction with linearly increasing voltage measurements demonstrates that SWNT or C60@SWNT incorporation improves hole-transporting behavior, rendering suppressed charge recombination and enhanced mobility of the HTL. The enhanced p-type characteristics and the improved hole diffusion lengths of SWNT- or C60@SWNT-incorporated HTL bring improvement of the entire hole-transporting length and enable lossless hole collection, which results in the JSC enhancement of the CQDPVs.
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Affiliation(s)
- Jonghee Yang
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 04763 , Republic of Korea
| | - Jongtaek Lee
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 04763 , Republic of Korea
| | - Junyoung Lee
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 04763 , Republic of Korea
| | - Whikun Yi
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 04763 , Republic of Korea
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Xue J, Wang R, Chen L, Nuryyeva S, Han TH, Huang T, Tan S, Zhu J, Wang M, Wang ZK, Zhang C, Lee JW, Yang Y. A Small-Molecule "Charge Driver" enables Perovskite Quantum Dot Solar Cells with Efficiency Approaching 13. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900111. [PMID: 31343086 DOI: 10.1002/adma.201900111] [Citation(s) in RCA: 35] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2019] [Revised: 07/03/2019] [Indexed: 05/20/2023]
Abstract
Halide perovskite colloidal quantum dots (CQDs) have recently emerged as a promising candidate for CQD photovoltaics due to their superior optoelectronic properties to conventional chalcogenides CQDs. However, the low charge separation efficiency due to quantum confinement still remains a critical obstacle toward higher-performance perovskite CQD photovoltaics. Available strategies employed in the conventional CQD devices to enhance the carrier separation, such as the design of type-Ⅱ core-shell structure and versatile surface modification to tune the electronic properties, are still not applicable to the perovskite CQD system owing to the difficulty in modulating surface ligands and structural integrity. Herein, a facile strategy that takes advantage of conjugated small molecules that provide an additional driving force for effective charge separation in perovskite CQD solar cells is developed. The resulting perovskite CQD solar cell shows a power conversion efficiency approaching 13% with an open-circuit voltage of 1.10 V, short-circuit current density of 15.4 mA cm-2 , and fill factor of 74.8%, demonstrating the strong potential of this strategy toward achieving high-performance perovskite CQD solar cells.
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Affiliation(s)
- Jingjing Xue
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Rui Wang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Lan Chen
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Selbi Nuryyeva
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Tae-Hee Han
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Tianyi Huang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Shaun Tan
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Jiahui Zhu
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Minhuan Wang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Zhao-Kui Wang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Chunfeng Zhang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Jin-Wook Lee
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Yang Yang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
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Shkir M, Yahia I, AlFaify S. A facilely one pot low temperature synthesis of novel Pt doped PbS nanopowders and their characterizations for optoelectronic applications. J Mol Struct 2019. [DOI: 10.1016/j.molstruc.2019.04.099] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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Tavakoli Dastjerdi H, Tavakoli R, Yadav P, Prochowicz D, Saliba M, Tavakoli MM. Oxygen Plasma-Induced p-Type Doping Improves Performance and Stability of PbS Quantum Dot Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2019; 11:26047-26052. [PMID: 31257844 DOI: 10.1021/acsami.9b08466] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
PbS quantum dots (QDs) have been extensively studied for photovoltaic applications, thanks to their facile and low-cost fabrication processing and interesting physical properties such as size dependent and tunable band gap. However, the performance of PbS QD-based solar cells is highly sensitive to the humidity level in the ambient air, which is a serious obstacle toward its practical applications. Although it has been previously revealed that oxygen doping of the hole transporting layer can mitigate the cause of this issue, the suggested methods to recover the device performance are time-consuming and relatively costly. Here, we report a low-power oxygen plasma treatment as a rapid and low-cost method to effectively recover the device performance and stability. Our optimization results show that a 10 min treatment is the best condition, resulting in an enhanced power conversion efficiency from 6.9% for the as-prepared device to 9% for the plasma treated one. Moreover, our modified device shows long-term shelf-life stability.
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Affiliation(s)
| | - Rouhollah Tavakoli
- Department of Materials Science and Engineering , Sharif University of Technology , 14588 Tehran , Iran
| | - Pankaj Yadav
- Department of Solar Energy, School of Technology , Pandit Deendayal Petroleum University , 382 007 Gandhinagar , Gujarat , India
| | - Daniel Prochowicz
- Institute of Physical Chemistry , Polish Academy of Sciences , Kasprzaka 44/52 , 01-224 Warsaw , Poland
| | - Michael Saliba
- Institute of Materials Science , Technical University of Darmstadt , Alarich-Weiss-Strasse 2 , D-64287 Darmstadt , Germany
| | - Mohammad Mahdi Tavakoli
- Department of Materials Science and Engineering , Sharif University of Technology , 14588 Tehran , Iran
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48
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Rufato KB, Almeida VC, Kipper MJ, Rubira AF, Martins AF, Muniz EC. Polysaccharide-based adsorbents prepared in ionic liquid with high performance for removing Pb(II) from aqueous systems. Carbohydr Polym 2019; 215:272-279. [DOI: 10.1016/j.carbpol.2019.03.095] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2019] [Revised: 03/23/2019] [Accepted: 03/26/2019] [Indexed: 01/08/2023]
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49
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Lee WS, Jeon S, Oh SJ. Wearable sensors based on colloidal nanocrystals. NANO CONVERGENCE 2019; 6:10. [PMID: 30937630 PMCID: PMC6443739 DOI: 10.1186/s40580-019-0180-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2019] [Accepted: 03/12/2019] [Indexed: 05/04/2023]
Abstract
In recent times, wearable sensors have attracted significant attention in various research fields and industries. The rapid growth of the wearable sensor related research and industry has led to the development of new devices and advanced applications such as bio-integrated devices, wearable health care systems, soft robotics, and electronic skins, among others. Nanocrystals (NCs) are promising building blocks for the design of novel wearable sensors, due to their solution processability and tunable properties. In this paper, an overview of NC synthesis, NC thin film fabrication, and the functionalization of NCs for wearable applications (strain sensors, pressure sensors, and temperature sensors) are provided. The recent development of NC-based strain, pressure, and temperature sensors is reviewed, and a discussion on their strategies and operating principles is presented. Finally, the current limitations of NC-based wearable sensors are discussed, in addition to methods to overcome these limitations.
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Affiliation(s)
- Woo Seok Lee
- Department of Materials Science and Engineering, Korea University, Seoul, 02841 Republic of Korea
| | - Sanghyun Jeon
- Department of Materials Science and Engineering, Korea University, Seoul, 02841 Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, Seoul, 02841 Republic of Korea
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Shulga A, Kahmann S, Dirin DN, Graf A, Zaumseil J, Kovalenko MV, Loi MA. Electroluminescence Generation in PbS Quantum Dot Light-Emitting Field-Effect Transistors with Solid-State Gating. ACS NANO 2018; 12:12805-12813. [PMID: 30540904 PMCID: PMC6307172 DOI: 10.1021/acsnano.8b07938] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2018] [Accepted: 12/12/2018] [Indexed: 05/22/2023]
Abstract
The application of light-emitting field-effect transistors (LEFET) is an elegant way of combining electrical switching and light emission in a single device architecture instead of two. This allows for a higher degree of miniaturization and integration in future optoelectronic applications. Here, we report on a LEFET based on lead sulfide quantum dots processed from solution. Our device shows state-of-the-art electronic behavior and emits near-infrared photons with a quantum yield exceeding 1% when cooled. We furthermore show how LEFETs can be used to simultaneously characterize the optical and electrical material properties on the same device and use this benefit to investigate the charge transport through the quantum dot film.
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Affiliation(s)
- Artem
G. Shulga
- Zernike
Institute for Advanced Materials, University
of Groningen, NL-9747AG Groningen, The Netherlands
| | - Simon Kahmann
- Zernike
Institute for Advanced Materials, University
of Groningen, NL-9747AG Groningen, The Netherlands
| | - Dmitry N. Dirin
- Department
of Chemistry and Applied Biosciences, ETH
Zürich, CH-8093 Zürich, Switzerland
- Empa-Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Arko Graf
- Institute
for Physical Chemistry, Universität
Heidelberg, DE-69120 Heidelberg, Germany
| | - Jana Zaumseil
- Institute
for Physical Chemistry, Universität
Heidelberg, DE-69120 Heidelberg, Germany
| | - Maksym V. Kovalenko
- Department
of Chemistry and Applied Biosciences, ETH
Zürich, CH-8093 Zürich, Switzerland
- Empa-Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Maria A. Loi
- Zernike
Institute for Advanced Materials, University
of Groningen, NL-9747AG Groningen, The Netherlands
- Phone: +31 50 363 4119. Fax: +31 50363 8751. E-mail:
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