Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) known for their exceptional electrical and optical properties have emerged as promising channel materials for next-generation electronics. However, as strong Fermi-level pinning (FLP) between the metal and the 2D TMDC material at the source/drain (S/D) contact decides the Schottky barrier height (SBH), the transistor polarity is fixed to a certain type, which remains a challenge for the 2D TMDC field-effect transistors (FETs). Here, a S/D contact structure with a quasi-zero-dimensional (quasi-0D) contact interface, in which the dimensionality reduction effect alleviates FLP, was developed to gain controllability over the polarity of the 2D TMDC FET. As a result, conventional metal contacts on the WSe2 FET showed n-type characteristics due to strong FLP (pinning factor of 0.06) near the conduction band, and the proposed quasi-0D contact enabled by the Ag conductive filament on the WSe2 FET exhibited p-type characteristics with a SBH very close to the Schottky-Mott rule (pinning factor of 0.95). Furthermore, modeling of Schottky barriers of conventional contacts, one-dimensional (1D) contacts, and quasi-0D contacts revealed that the SBH of the quasi-0D contact is relatively less subject to interface dipoles that induce FLP, owing to more rapid decaying of dipole energy. The proposed contact in this study provided a method that progressed beyond the alleviation of FLP to achieve controllable polarity. Moreover, reducing the contact dimensionality to quasi-0D will enable high compatibility with the further scaled-down nanoscale device contact structure.

Object Motion Detection Enabled by Reconfigurable Neuromorphic Vision Sensor under Ferroelectric Modulation

Increasing the demand for object motion detection (OMD) requires shifts of reducing redundancy, heightened power efficiency, and precise programming capabilities to ensure consistency and accuracy. Drawing inspiration from object motion-sensitive ganglion cells, we propose an OMD vision sensor with a simple device structure of a WSe2 homojunction modulated by a ferroelectric copolymer. Under optical mode and intermediate ferroelectric modulation, the vision sensor can generate progressive and bidirectional photocurrents with discrete multistates under zero power consumption. This design enables reconfigurable devices to emulate long-term potentiation and depression for synaptic weights updating, which exhibit 82 states (more than 6 bits) with a uniform step of 6 pA. Such OMD devices also demonstrate nonvolatility, reversibility, symmetry, and ultrahigh linearity, achieving a fitted R2 of 0.999 and nonlinearity values of 0.01/-0.01. Thus, a vision sensor could implement motion detection by sensing only dynamic information based on the brightness difference between frames, while eliminating redundant data from static scenes. Additionally, the neural network utilizing a linear result can recognize the essential moving information with a high recognition accuracy of 96.8%. We also present the scalable potential via a uniform 3 × 3 neuromorphic vision sensor array. Our work offers a platform to achieve motion detection based on controllable and energy-efficient ferroelectric programmability.

Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits

Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.

van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for next-generation electronics owing to their atomically thin structures and surfaces devoid of dangling bonds. However, establishing high-quality metal contacts with TMDs presents a critical challenge, primarily attributed to their ultrathin bodies and delicate lattices. These distinctive characteristics render them susceptible to physical damage and chemical reactions when conventional metallization approaches involving "high-energy" processes are implemented. To tackle this challenge, the concept of van der Waals (vdW) contacts has recently been proposed as a "low-energy" alternative. Within the vdW geometry, metal contacts can be physically laminated or gently deposited onto the 2D channel of TMDs, ensuring the formation of atomically clean and electronically sharp contact interfaces while preserving the inherent properties of the 2D TMDs. Consequently, a considerable number of vdW contact devices have been extensively investigated, revealing unprecedented transport physics or exceptional device performance that was previously unachievable. This review presents recent advancements in vdW contacts for TMD transistors, discussing the merits, limitations, and prospects associated with each device geometry. By doing so, our purpose is to offer a comprehensive understanding of the current research landscape and provide insights into future directions within this rapidly evolving field.

Reconfigurable Two-Dimensional Air-Gap Barristors

Reconfigurable logic circuits implemented by two-dimensional (2D) ambipolar semiconductors provide a prospective solution for the post-Moore era. It is still a challenge for ambipolar nanomaterials to realize reconfigurable polarity control and rectification with a simplified device structure. Here, an air-gap barristor based on an asymmetric stacking sequence of the electrode contacts was developed to resolve these issues. For the 2D ambipolar channel of WSe₂, the barristor can not only be reconfigured as an n- or p-type unipolar transistor but also work as a switchable diode. The air gap around the bottom electrode dominates the reconfigurable behaviors by widening the Schottky barrier here, thus blocking the injection of both electrons and holes. The electrical performances can be improved by optimizing the electrode materials, which achieve an on/off ratio of 10⁴ for the transistor and a rectifying ratio of 10⁵ for the diode. A complementary inverter and a switchable AND/OR logic gate were constructed by using the air-gap barristors as building blocks. This work provides an efficient approach with great potential for low-dimensional reconfigurable electronics.

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices. However, researchers face formidable challenges in 2D device processing mainly originated from the out-of-plane van der Waals (vdW) structure of ultrathin 2D materials. As major challenges, untunable Schottky barrier height and the corresponding strong Fermi level pinning (FLP) at metal interfaces are observed unexpectedly with 2D vdW materials, giving rise to unmodulated semiconductor polarity, high contact resistance, and lowered device mobility. Here, FLP observed from recently developed 2D semiconductor devices is addressed differently from those observed from conventional semiconductor devices. It is understood that the observed FLP is attributed to inefficient doping into 2D materials, vdW gap present at the metal interface, and hybridized compounds formed under contacting metals. To provide readers with practical guidelines for the design of 2D devices, the impact of FLP occurring in 2D semiconductor devices is further reviewed by exploring various origins responsible for the FLP, effects of FLP on 2D device performances, and methods for improving metallic contact to 2D materials.

High-specific-power flexible transition metal dichalcogenide solar cells

Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact–TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: (1) transparent graphene contacts to mitigate Fermi-level pinning, (2) MoO_x capping for doping, passivation and anti-reflection, and (3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of 4.4 W g⁻¹ for flexible TMD (WSe₂) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to 46 W g⁻¹, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

Ultrathin transition metal dichalcogenides (TMDs) hold promise for next-generation lightweight photovoltaics. Here, the authors demonstrate the first flexible high power-per-weight TMD solar cells with notably improved power conversion efficiency.

Status and prospects of Ohmic contacts on two-dimensional semiconductors

In recent years, two-dimensional materials have received more and more attention in the development of semiconductor devices, and their practical applications in optoelectronic devices have also developed rapidly. However, there are still some factors that limit the performance of two-dimensional semiconductor material devices, and one of the most important is Ohmic contact. Here, we elaborate on a variety of approaches to achieve Ohmic contacts on two-dimensional materials and reveal their physical mechanisms. For the work function mismatch problem, we summarize the comparison of barrier heights between different metals and 2D semiconductors. We also examine different methods to solve the problem of Fermi level pinning. For the novel 2D metal-semiconductor contact methods, we analyse their effects on reducing contact resistance from two different perspectives: homojunction and heterojunction. Finally, the challenges of 2D semiconductors in achieving Ohmic contacts are outlined.

Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors

The controllability of carrier density and major carrier type of transition metal dichalcogenides(TMDCs) is critical for electronic and optoelectronic device applications. To utilize doping in TMDC devices, it is important to understand the role of dopants in charge transport properties of TMDCs. Here, the effects of molecular doping on the charge transport properties of tungsten diselenide (WSe₂ ) are investigated using three p-type molecular dopants, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄ -TCNQ), tris(4-bromophenyl)ammoniumyl hexachloroantimonate (magic blue), and molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd-COCF₃ )₃ ). The temperature-dependent transport measurements show that the dopant counterions on WSe₂ surface can induce Coulomb scattering in WSe₂ channel and the degree of scattering is significantly dependent on the dopant. Furthermore, the quantitative analysis revealed that the amount of charge transfer between WSe₂ and dopants is related to not only doping density, but also the contribution of each dopant ion toward Coulomb scattering. The first-principles density functional theory calculations show that the amount of charge transfer is mainly determined by intrinsic properties of the dopant molecules such as relative frontier orbital positions and their spin configurations. The authors' systematic investigation of the charge transport of doped TMDCs will be directly relevant for pursuing molecular routes for efficient and controllable doping in TMDC nanoelectronic devices.

Probing magnetism in atomically thin semiconducting PtSe2

Atomic-scale disorder in two-dimensional transition metal dichalcogenides is often accompanied by local magnetic moments, which can conceivably induce long-range magnetic ordering into intrinsically non-magnetic materials. Here, we demonstrate the signature of long-range magnetic orderings in defective mono- and bi-layer semiconducting PtSe₂ by performing magnetoresistance measurements under both lateral and vertical measurement configurations. As the material is thinned down from bi- to mono-layer thickness, we observe a ferromagnetic-to-antiferromagnetic crossover, a behavior which is opposite to the one observed in the prototypical 2D magnet CrI₃. Our first-principles calculations, supported by aberration-corrected transmission electron microscopy imaging of point defects, associate this transition to the interplay between the defect-induced magnetism and the interlayer interactions in PtSe₂. Furthermore, we show that graphene can be effectively used to probe the magnetization of adjacent semiconducting PtSe₂. Our findings in an ultimately scaled monolayer system lay the foundation for atom-by-atom engineering of magnetism in otherwise non-magnetic 2D materials.

Beneficiary defects could be utilized to introduce magnetism into materials that are not intrinsically magnetic. Here, the authors demonstrate long range magnetic order in the air-stable, defective Platinum Diselenide in the ultimate limit of thickness by using proximitized graphene as a probe.

Thermomechanical Nanocutting of 2D Materials

Atomically thin materials, such as graphene and transition metal dichalcogenides, are promising candidates for future applications in micro/nanodevices and systems. For most applications, functional nanostructures have to be patterned by lithography. Developing lithography techniques for 2D materials is essential for system integration and wafer-scale manufacturing. Here, a thermomechanical indentation technique is demonstrated, which allows for the direct cutting of 2D materials using a heated scanning nanotip. Arbitrarily shaped cuts with a resolution of 20 nm are obtained in monolayer 2D materials, i.e., molybdenum ditelluride (MoTe₂ ), molybdenum disulfide (MoS₂ ), and molybdenum diselenide (MoSe₂ ), by thermomechanically cleaving the chemical bonds and by rapid sublimation of the polymer layer underneath the 2D material layer. Several micro/nanoribbon structures are fabricated and electrically characterized to demonstrate the process for device fabrication. The proposed direct nanocutting technique allows for precisely tailoring nanostructures of 2D materials with foreseen applications in the fabrication of electronic and photonic nanodevices.

Versatile Electronic Devices Based on WSe2/SnSe2 Vertical van der Waals Heterostructures

Van der Waals heterostructures formed by stacking of various two-dimensional materials are promising in electronic applications. However, the performances of most reported electronic devices based on van der Waals heterostructures are far away from those of existing (Si, Ge, and III-V bulk material based) technologies. Here, we report high-performance heterostructure devices based on vertically stacked tungsten diselenide and tin diselenide. Due to the unique band alignment and the atomic thickness of the material, both charge carrier transport and energy barrier can be effectively modulated by the applied electrical field. As a result, the heterostructure devices show superb characteristics, with a high current on/off ratio of ∼3 × 10⁸, an average subthreshold slope of 126 mV/dec over 5 dec of current change due to band-to-band tunneling, an ultrahigh rectification ratio of ∼3 × 10⁸, and a current density of more than 10⁴ A/cm². Furthermore, a small signal half-wave rectifier circuit based on a majority-carrier-transport-dominated diode is successfully demonstrated, showing great potential in future high-speed electronic applications.