Ferroelectricity-Defects Synergistic Artificial Synapses for High Recognition Accuracy Neuromorphic Computing

The ability of ferroelectric memristors to modulate conductance and offer multilevel storage has garnered significant attention in the realm of artificial synapses. On one hand, the resistance change of ferroelectric memristors mainly depends on the polarization reversal. On the other hand, the defects such as oxygen vacancies, which are inevitable presence during high-temperature processes, can undergo diffusion drift with the polarization reversal, thereby change the interface potential barrier. Thus, it is both desirable and necessary to investigate the synergistic effect of ferroelectricity and defects. Here, we prepare BaTiO3 ferroelectric memristor by pulse laser deposition and achieve resistance switching through the synergistic effect of ferroelectricity and oxygen vacancies. The memristor shows excellent switching characteristics with a large switching ratio (104) and good stability (103 s). It effectively emulates the features of artificial synapses and accomplishes decimal logical neural computing. In the neuromorphic system crafted with the memristor, the recognition accuracy of the 28 × 28 pixel image reaches 94.9%. These findings strongly support the research of ferroelectric memristors in neuromorphic devices.

Effect and Regulation Mechanism of Post-deposition Annealing on the Ferroelectric Properties of AlScN Thin Films

Integrating ferroelectric AlScN with III-N semiconductors to enhance the performance and tunability of nitride devices requires high-quality AlScN films. This work focuses on the effect and regulation mechanism of post-annealing in pure N2 on the crystal quality and ferroelectric properties of AlScN films. It is found that the crystal quality improves with increasing annealing temperatures. Remarkably, the leakage current of AlScN films caused by grain boundaries could be reduced by four orders of magnitude after annealing at 400 °C. The crystal growth dynamics simulations and band structure calculations indicate that the energy supplied by the temperature facilitates the evolution of abnormally oriented grains to have a better c-axis orientation, resulting in the defect states at the Fermi-level disappearing, which is mainly the reason for the leakage current decrease. More interestingly, the reduction of leakage current leads to the previously leaking region exhibiting ferroelectric properties, which is of great significance to improve the ferroelectricity of AlScN and ensure the uniformity of devices. Furthermore, annealing enhances the tensile strain on the film, which flattens the energy landscape of ferroelectric switching and reduces the coercive field. However, the risk of incorporation of oxygen will also be increased if the annealing temperatures are higher than 400 °C, which will not only reduce the relative displacement of metal atoms and nitrogen atoms in AlScN but also enhance the ferroelectric depolarization field, leading to the remnant polarization decreasing dramatically. These discoveries facilitate a deeper understanding of the influencing mechanism on the ferroelectric properties of AlScN films and provide a direction for obtaining high-quality AlScN.

Kinetics of N- to M-Polar Switching in Ferroelectric Al1-xScxN Capacitors

Ferroelectric wurtzite-type aluminum scandium nitride (Al1-xScxN) presents unique properties that can enhance the performance of non-volatile memory technologies. The realization of the full potential of Al1-xScxN requires a comprehensive understanding of the mechanism of polarization reversal and domain structure dynamics involved in the ferroelectric switching process. In this work, transient current integration measurements performed by a pulse switching method are combined with domain imaging by piezoresponse force microscopy (PFM) to investigate the kinetics of domain nucleation and wall motion during polarization reversal in Al0.85Sc0.15N capacitors. In the studied electric field range (from 4.4 to 5.6 MV cm-1), ferroelectric switching proceeds via domain nucleation and wall movement. The currently available phenomenological models are shown to not fully capture all the details of the complex dynamics of polarization reversal in Al0.85Sc0.15N. PFM reveals a non-linear increase of both domain nucleation rate and lateral wall velocity during the switching process, as well as the dependency of the domain pattern on the polarization reversal direction. A continuously faster N- to M-polar switching upon cycling is reported and ascribed to an increasing number of M-polar nucleation sites and density of domain walls.

Emergent Three-Dimensional Electric Dipole Sinewave in Bulk Perovskite Oxides

The magnetic and electric dipoles of ferroics play a central role in their fascinating properties. In particular, topological configurations have shown promising potential for use in novel electromechanical and electronic devices. Magnetic configurations from simple collinear to complex topological are well-documented. In contrast, many complex topological features in the electric counterpart remain unexplored. Here, we report the first example of three-dimensional electric dipole sinewave topological structure in a PbZrO3-based bulk perovskite, which presents an interesting triple-hysteresis loop macroscopically. This polar configuration consists of two orthogonal sinewave electric dipole modulations decoded from a polar incommensurate phase by advanced diffraction and atomic-resolution imaging techniques. The resulting topology is unraveled to be the competition between the antiferroelectric and ferroelectric states, stabilized by the modulation of the Pb 6s2 lone pair and the antiferrodistortive effect. These findings further reinforce the similarity of the magnetic and electric topologies.

Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2

Ultrathin 2D ferroelectrics with high Curie temperature are critical for multifunctional ferroelectric devices. However, the ferroelectric spontaneous polarization is consistently broken by the strong thermal fluctuations at high temperature, resulting in the rare discovery of high-temperature ferroelectricity in 2D materials. Here, a chemical vapor deposition method is reported to synthesize 2D CuCrSe2 nanosheets. The crystal structure is confirmed by scanning transmission electron microscopy characterization. The measured ferroelectric phase transition temperature of ultrathin CuCrSe2 is about ≈800 K. Significantly, the switchable ferroelectric polarization is observed in ≈5.2 nm nanosheet. Moreover, the in-plane and out-of-plane ferroelectric response are modulated by different maximum bias voltage. This work provides a new insight into the construction of 2D ferroelectrics with high Curie temperature.

Transition from fractal-dendritic to compact islands for the 2D-ferroelectric SnSe on graphene/Ir(111)

Epitaxial growth is a versatile method to prepare two-dimensional van der Waals ferroelectrics like group IV monochalcogenides which have potential for novel electronic devices and sensors. We systematically study SnSe monolayer islands grown by molecular beam epitaxy, especially the effect of annealing temperature on shape and morphology of the edges. Characterization of the samples by scanning tunneling microscopy reveals that the shape of the islands changes from fractal-dendritic after deposition at room temperature to a compact rhombic shape through annealing, but ripening processes are absent up to the desorption temperature. A two-step growth process leads to large, epitaxially aligned rhombic islands bounded by well-defined110-edges (armchair-like), which we claim to be the equilibrium shape of the stoichiometric SnSe monolayer islands. The relaxation of the energetically favorable edges is detected in atomically resolved STM images. The experimental findings are supported by the results of our first-principles calculations, which provide insights into the energetics of the edges, their reconstructions, and yields the equilibrium shapes of the islands which are in good agreement with the experiment.

Supramolecular Organic Ferroelectric Materials from Donor-Acceptor Systems

Organic ferroelectric (FE) materials, though known for more than a century, are yet to reach close to the benchmark of inorganic or hybrid materials in terms of the magnitude of polarization. Amongst the different classes of organic systems, donor (D)-acceptor (A) charge-transfer (CT) complexes are recognized as promising for ferroelectricity owing to their neutral-to-ionic phase transition at low temperature. This review presents an overview of different supramolecular D-A systems that have been explored for FE phase transitions. The discussion begins with a general introduction of ferroelectricity and its different associated parameters. Then it moves on to show early examples of CT cocrystals that have shown FE properties at sub-ambient temperature. Subsequently, recent developments in the field of room temperature (RT) ferroelectricity, exhibited by H-bond-stabilized lock-arm supramolecular-ordering (LASO) in D-A co-crystals or other FE CT-crystals devoid of neutral-ionic phase transition are discussed. Then the discussion moves on to emerging reports on other D-A soft materials such as gel and foldable polymers; finally it shows very recent developments in ferroelectricity in supramolecular assemblies of single-component dipolar or ambipolar π-systems, exhibiting intra-molecular charge transfer. The effects of structural nuances such as H-bonding, balanced charge transfer and chirality on the observed ferroelectricity is described with the available examples. Finally, piezoelectricity in recently reported ambipolar ADA-type systems are discussed to highlight the future potential of these soft materials in micropower energy harvesting.

Magnetron-Sputtered Lead Titanate Thin Films for Pyroelectric Applications: Part 2-Electrical Characteristics and Characterization Methods

Pyroelectric materials are naturally electrically polarized and exhibits a built-in spontaneous polarization in their unit cell structure even in the absence of any externally applied electric field. These materials are regarded as one of the ideal detector elements for infrared applications because they have a fast response time and uniform sensitivity at room temperature across all wavelengths. Crystals of the perovskite lead titanate (PbTiO3) family show pyroelectric characteristics and undergo structural phase transitions. They have a high Curie temperature (the temperature at which the material changes from the ferroelectric (polar) to the paraelectric (nonpolar) phase), high pyroelectric coefficient, high spontaneous polarization, low dielectric constant, and constitute important component materials not only useful for infrared detection, but also with vast applications in electronic, optic, and MEMS devices. However, the preparation of large perfect and pure single crystals PbTiO3 is challenging. Additionally, difficulties arise in the application of such bulk crystals in terms of connection to processing circuits, large size, and high voltages required for their operation. In this part of the review paper, we explain the electrical behavior and characterization techniques commonly utilized to unravel the pyroelectric properties of lead titanate and its derivatives. Further, it explains how the material preparation techniques affect the electrical characteristics of resulting thin films. It also provides an in-depth discussion of the measurement of pyroelectric coefficients using different techniques.

Quantification of Crystalline Phases in Hf0.5Zr0.5O2 Thin Films through Complementary Infrared Spectroscopy and Ab Initio Supercell Simulations

In the quest for thinner and more efficient ferroelectric devices, Hf0.5Zr0.5O2 (HZO) has emerged as a potential ultrathin and lead-free ferroelectric material. Indeed, when deposited on a TiN electrode, 1-25 nm thick HZO exhibits excellent ferroelectricity capability, allowing the prospective miniaturization of capacitors and transistor devices. To investigate the origin of ferroelectricity in HZO thin films, we conducted a far-infrared (FIR) spectroscopic study on 5 HZO films with thicknesses ranging from 10 to 52 nm, both within and out of the ferroelectric thickness range where ferroelectric properties are observed. Based on X-ray diffraction, these HZO films are estimated to contain various proportions of monoclinic (m-), tetragonal (t-), and polar orthorhombic (polar o-) phases, while only the 11, 17, and 21 nm thick are expected to include a higher amount of polar o-phase. We coupled the HZO infrared measurements with DFT simulations for these m-, t-, and polar o-crystallographic structures. The approach used was based on the supercell method, which combines all possible Hf/Zr mixed atomic sites in the solid solution. The excellent agreement between measured and simulated spectra allows assigning most bands and provides infrared signatures for the various HZO structures, including the polar orthorhombic form. Beyond pure assignment of bands, the DFT IR spectra averaging using a mix of different compositions (e.g., 70% polar o-phase +30% m-phase) of HZO DFT crystal phases allows quantification of the percentage of different structures inside the different HZO film thicknesses. Regarding the experimental data analysis, we used the spectroscopic data to perform a Kramers-Kronig constrained variational fit to extract the optical functions of the films using a Drude-Lorentz-based model. We found that the ferroelectric films could be described using a set of about 7 oscillators, which results in static dielectric constants in good agreement with theoretical values and previously reported ones for HfO2-doped ferroelectric films.

Polar Organic Charge-Transfer Complex of the Asymmetrical Component for Flexible Piezoelectric Energy Harvesting and Self-Powered Wearable Sensors

Organic piezomaterials have attracted much attention because of their easy processing, lightweight, and mechanic flexibility properties. Developing new smart organic piezomaterials is highly required for new-generation electronic applications. Here, we found a novel organic piezomaterial of organic charge-transfer complex (CTC) consisting of dibenzcarbazole analogue (DBCz) and tetracyanoquinodimethane (TCNQ) in the molecular-level heterojunction stacking mode. The DBCz-TCNQ complex exhibited ferroelectric properties (the saturated polarization of ∼1.23 μC/cm2) at room temperature with a low coercive field. The noncentrosymmetric alignment (Pc space group) led to a spontaneous polarization of this architecture and thus was the origin of the piezoelectric behavior. Lateral piezoelectric nanogenerators (PENGs) based on the thermal evaporated CTC thin-film exhibited significant energy conversion behavior under mechanical agitation with a calculated piezoelectric coefficient (d31) of ∼33 pC/N. Furthermore, such a binary CTC thin-film constructed single-electrode PENG could show steady-state sensing performance to external stimuli as this flexible wearable device precisely detected physiological signals (e.g., finger bending, blink movement, carotid artery, etc.) with a self-powered supply. This work provides that the polar CTCs can act as efficient piezomaterials for flexible energy harvesting, conversion, and wearable sensing devices with a self-powered supply, enabling great potential in healthcare, motion detection, human-machine interfaces, etc.

The Domain and Structural Characteristics of Ferroelectric Copolymers Based on Vinylidene Fluoride Copolymer with Tetrafluoroethylene Composition (94/6)

This paper presents data on the macroscopic polarization of copolymer films of vinylidene fluoride with tetrafluoroethylene obtained with a modified apparatus assembled according to the Sawyer-Tower Circuit. The kinetics of the polarization process were analyzed taking into consideration the contributions of both bound and quasi-free (impurity) charges. It was shown that an "abnormal" decrease in conductivity was observed in fields near the coercive fields. This could be associated with the appearance of deep traps of the impurity charge carriers formed by the polar planes of β-phase crystals. The conductivity data obtained from the charge and current responses differed. It was concluded that chain segments contributing to polarization with sufficiently low fields were present in the amorphous phase. A comparison showed that the average size of β-phase crystals (crystals of X-ray diffraction reflection width) was almost one order of magnitude lower than the domain size obtained using piezoresponse force microscopy (PFM). The analysis of the fast-stage dielectric response before and after polarization indicated that as the external polarizing field increased in the ferroelectric polymer chains, conformational transitions occurred according to the T3GT3G- → (-TT-)n и TGTG → (-TT-)n types. This was accompanied by an increase in the effective dipole moment in the amorphous phase chains. The analysis of the IR spectroscopy data obtained in transmission and ATR modes revealed a difference in the conformational states of the chains in the core and surface parts of the film.

Ferroelectricity and Thermochromism in a 2D Dion-Jacobson Organic-Inorganic Hybrid Perovskite

2D organic-inorganic hybrid perovskites (OIHPs) have become one of the hottest research topics due to their excellent environmental stability and unique optoelectronic properties. Recently, the ferroelectricity and thermochromism of 2D OIHPs have attracted increasing interests. Integrating ferroelectricity and thermochromism into perovskites can significantly promote the development of multichannel intelligent devices. Here, a novel 2D Dion-Jacobson OIHP of the formula (3AMP)PbI4 (where 3AMP is 3-(aminomethyl)pyridinium) is reported, which has a remarkable spontaneous polarization value (Ps) of 15.6 µC cm-2 and interesting thermochromism. As far it is known, such a large Ps value is the highest for 2D OIHPs recorded so far. These findings will inspire further exploration and application of multifunctional perovskites.

A Novel Ferroelectric Rashba Semiconductor

Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials are established to belong to this class of multifunctional materials. Here, Pb1- x Gex Te is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion are demonstrated by temperature dependent X-ray diffraction, and their effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. This work defines Pb1- x Gex Te as a high-potential FERSC system for spintronic applications.

Engineering Relaxor Behavior in (BaTiO3 )n /(SrTiO3 )n Superlattices

Complex-oxide superlattices provide a pathway to numerous emergent phenomena because of the juxtaposition of disparate properties and the strong interfacial interactions in these unit-cell-precise structures. This is particularly true in superlattices of ferroelectric and dielectric materials, wherein new forms of ferroelectricity, exotic dipolar textures, and distinctive domain structures can be produced. Here, relaxor-like behavior, typically associated with the chemical inhomogeneity and complexity of solid solutions, is observed in (BaTiO3 )n /(SrTiO3 )n (n = 4-20 unit cells) superlattices. Dielectric studies and subsequent Vogel-Fulcher analysis show significant frequency dispersion of the dielectric maximum across a range of periodicities, with enhanced dielectric constant and more robust relaxor behavior for smaller period n. Bond-valence molecular-dynamics simulations predict the relaxor-like behavior observed experimentally, and interpretations of the polar patterns via 2D discrete-wavelet transforms in shorter-period superlattices suggest that the relaxor behavior arises from shape variations of the dipolar configurations, in contrast to frozen antipolar stripe domains in longer-period superlattices (n = 16). Moreover, the size and shape of the dipolar configurations are tuned by superlattice periodicity, thus providing a definitive design strategy to use superlattice layering to create relaxor-like behavior which may expand the ability to control desired properties in these complex systems.

Polarization Alignment in Polycrystalline BiFeO3 Photoelectrodes for Tunable Band Bending

Polarization in a semiconductor can modulate the band bending via the depolarization electric field (EdP), subsequently tuning the charge separation and transfer (CST) process in photoelectrodes. However, the random orientation of dipole moments in many polycrystalline semiconductor photoelectrodes leads to negligible polarization effect. How to effectively align the dipole moments in polycrystalline photoelectrodes into the same direction to maximize the polarization is still to be developed. Herein, we report that the dipole moments in a ferroelectric BiFeO3 photoelectrode can be controlled under external poling, resulting in a tunable CST efficiency. A negative bias of -40 voltage (V) poling to the photoelectrode leads to an over 110% increase of the CST efficiency, while poling at +40 V, the CST efficiency is reduced to only 41% of the original value. Furthermore, a nearly linear relationship between the external poling voltage and surface potential is discovered. The findings here provide an effective method in tuning the band bending and charge transfer of the emerging ferroelectricity driven solar energy conversion.

Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications

Rapid developments in artificial neural network techniques and retina-inspired artificial visual systems are required to realize the sensing, processing, and memorization of an optical signal in a single device. Herein, a ferroelectric field-effect transistor fabricated with CuInP2S6 and α-In2Se3 van der Waals heterostructures is proposed and demonstrated for the development of an artificial visual system. The dipole polarizations are coupled and bidirectionally locked inside the ferroelectric α-In2Se3 along the in-plane and out-of-plane directions and are controlled by the gate voltages. Furthermore, light-induced polarization can change the order of polarization of the dipoles inside α-In2Se3. We demonstrate that using the combined control of these electrical and optical signals, the device may function like a retina-inspired vision system. The device can operate across a wide wavelength range (405-850 nm) and detect very low incident light (0.03 mW/cm2). Color recognition, high paired-pulse facilitation (∼170%), and short- to long-term memory transitions through quick learning are observed using this device. Additionally, this device demonstrates different complex processing abilities, including pattern recognition, light adaptation, optical logic operation, and event learning. The proposed ferroelectric heterostructure-based artificial visual system can serve as an essential bridge for fulfilling the future requirements of all-in-one sensing and memory-processing devices.

Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits

Emerging reconfigurable devices are fast gaining popularity in the search for next-generation computing hardware, while ferroelectric engineering of the doping state in semiconductor materials has the potential to offer alternatives to traditional von-Neumann architecture. In this work, we combine these concepts and demonstrate the suitability of reconfigurable ferroelectric field-effect transistors (Re-FeFETs) for designing nonvolatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe2) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP2S6) layer. Controlling the state encoded in the program gate enables switching between p, n, and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 106 and hysteresis windows of up to 10 V width. The homojunction can change from Ohmic-like to diode behavior with a large rectification ratio of 104. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy-harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with a long retention time exceeding 104 s. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key nonvolatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates high compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit promising potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.

Dual Breaking of Molecular Orbitals and Spatial Symmetry in an Optically Controlled Ferroelectric

As particles carry quantified energy, photon radiation enables orbital transitions of energy levels, leading to changes in the spin state of electrons. The resulting switchable structural bistability may bring a new paradigm for manipulating ferroelectric polarization. However, the studies on molecular orbital breaking in the ferroelectric field remain blank. Here, for the first time, a new mechanism of ferroelectrics-dual breaking of molecular orbitals and spatial symmetry, demonstrated in a photochromic organic crystal with light-induced polarization switching, is formally proposed. By alternating the ultraviolet/visible light irradiation, the states of electron spin and the radial distribution p atomic orbitals experience a change, showing a reversible switch from "shoulder-to-shoulder" form to a "head-to-head" form. This reflects a reversible conversion between π and σ bonds, which induces and couples with the variation of spatial symmetry. The intersection of spatial symmetry breaking and molecular orbital breaking in ferroelectrics present in this work will be more conducive to data encryption and anticounterfeiting.

Voltage-Mode Ferroelectric Synapse for Neuromorphic Computing

Ferroelectric materials with a modulable polarization extent hold promise for exploring voltage-driven neuromorphic hardware, in which direct current flow can be minimized. Utilizing a single active layer of an insulating ferroelectric polymer, we developed a voltage-mode ferroelectric synapse that can continuously and reversibly update its states. The device states are straightforwardly manifested in the form of variable output voltage, enabling large-scale direct cascading of multiple ferroelectric synapses to build a deep physical neural network. Such a neural network based on potential superposition rather than current flow is analogous to the biological counterpart driven by action potentials in the brain. A high accuracy of over 97% for the simulation of handwritten digit recognition is achieved using the voltage-mode neural network. The controlled ferroelectric polarization, revealed by piezoresponse force microscopy, turns out to be responsible for the synaptic weight updates in the ferroelectric synapses. The present work demonstrates an alternative strategy for the design and construction of emerging artificial neural networks.

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3

Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories due to their low energy consumption and high endurance. Among them, α-In2Se3 has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since most bulk FE materials lose their ferroelectric character at the 2D limit due to the depolarization field. Using angle resolved photoemission spectroscopy (ARPES), we unveil another unusual 2D phenomenon appearing in 2H α-In2Se3 single crystals, the occurrence of a highly metallic two-dimensional electron gas (2DEG) at the surface of vacuum-cleaved crystals. This 2DEG exhibits two confined states, which correspond to an electron density of approximately 1013 electrons/cm2, also confirmed by thermoelectric measurements. Combination of ARPES and density functional theory (DFT) calculations reveals a direct band gap of energy equal to 1.3 ± 0.1 eV, with the bottom of the conduction band localized at the center of the Brillouin zone, just below the Fermi level. Such strong n-type doping further supports the quantum confinement of electrons and the formation of the 2DEG.

Pyro-Phototronic Effect in All-Inorganic Two-Dimensional Ruddlesden-Popper Ferroelectric Perovskite Thin-films and Photodetection

Ferroelectric perovskites, where ferroelectricity is embedded in the structure, are being considered for different device applications. In this study, we introduce Cs2PbI2Cl2, an all-inorganic 2D Ruddlesden-Popper (RP) halide perovskite, as a ferroelectric material suitable for pyro-phototronic applications. Thin-films of the all-inorganic perovskite are successfully cast, and they demonstrate ferroelectric properties. Unlike hybrid materials, the ferroelectricity in Cs2PbI2Cl2 does not rely on the organic moiety possessing an electric dipole moment. Instead, the 2D-layer-forming octahedra are twisted and tilted due to a distortion in the bond lengths, leading to the emergence of spontaneous electric polarization. Based on the properties, we fabricate p-i-n heterojunctions by integrating the perovskite with carrier-transport layers. To determine the band-energies of the materials, scanning tunneling spectroscopy and Kelvin probe force microscopy are employed. The band-edges evidence a type-II band-alignment at both interfaces, enabling the material to exhibit both photovoltaic and pyroelectric behaviors when subjected to pulsed illumination. The devices based on the all-inorganic RP perovskite developed in this study exhibit pyro-phototronic effects and serve as self-powered photodetectors without any need for an external bias.

Ferroelectricity in Epitaxial Perovskite Oxide Bi2WO6 Films with One-Unit-Cell Thickness

Retaining ferroelectricity in ultrathin films or nanostructures is crucial for miniaturizing ferroelectric devices, but it is a challenging task due to intrinsic depolarization and size effects. In this study, we have shown that it is possible to stably maintain in-plane polarization in an extremely thin, one-unit-cell thick epitaxial Bi2WO6 film. The use of a perfectly lattice-matched NdGaO3 (110) substrate for the Bi2WO6 film minimizes strain and enhances stability. We attribute the residual polarization in this ultrathin film to the crystal stability of the Bi-O octahedral framework against structural distortions. Our findings suggest that ferroelectricity can surpass the critical thickness limit through proper strain engineering, and the Bi2WO6/NdGaO3 (110) system presents a potential platform for designing low-energy consumption, nonvolatile ferroelectric memories.

Robust Switchable Polarization and Coupled Electronic Characteristics of Magnesium-Doped Zinc Oxide

Ferroelectrics possess a spontaneous polarization that is switchable by an electric field and is critical for the development of low-energy nanoelectronics and neuromorphic applications. However, apart from a few recent developments, the realization of switchable polarization in metal oxides with simpler structures has been a major challenge. Here, we demonstrate the presence of robust switchable polarization at the level of a single nanocrystallite in magnesium-doped zinc oxide thin films with polar wurtzite crystal structures. Using a combination of high-resolution scanning probe microscopy and spectroscopic techniques, voltage control of the polarization and the coupled electronic transport behavior revealing a giant resistance change of approximately 10000% is unveiled. Time- and frequency-resolved nanoscale measurements provide key insights into the polarization phenomenon and a 9-fold increase in the effective longitudinal piezoelectric coefficient. Our work thus constitutes a crucial step toward validating nanoscale ferroelectricity in polar wurtzites for use in advanced nanoelectronics and memory applications.

Tailoring angle dependent ferroelectricity in nanoribbons of group-IV monochalcogenides

Ferroelectricity is significant in low dimensional structures due to the potential applications in multifunctional nanodevices. In this work, the tailoring angle dependent ferroelectricity is systematically investigated for the nanoribbons and nanowires of puckered group-IV monochalcogenides MX (M =Ge,Sn; X =S,Se). Based on first-principles calculations, it is found that the ferroelectricity of nanoribbon and nanowire strongly depends on the tailoring angle. Firstly, the critical width for the bare nanoribbon of group-IV monochalcogenide is obtained and discussed. As the nanowires are concerned, the ferroelectricity will disappear when the tailoring angle becomes small. At last, H-passivation on the edge and the strain engineering are employed to improve the ferroelectricity of nanoribbon, and it is obtained that H-passivation is beneficial to the enhancement of polarization for nanoribbons tailored near the armchair direction, while the polarization of nanoribbons tailored along the diagonal direction will decrease when the edges are passivated with H atoms, and the tensile strain along the length direction always favors the improvement of ferroelectricity of the considered nanoribbons. Therefore, tailoring angle has great influence on the ferroelectricity of nanoribbons and nanowires, which may be used as an effective way to tune the ferroelectricity and further the electronic structures of nanostructures in the field of nanoelectronics.

A Comparative Study of Pt/Al0.72Sc0.28N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates

AlxSc1-xN is a nitride-ferroelectric compatible with both CMOS and GaN technology. The origin of ferroelectricity in these ternary nitrides relies on the full inversion of nitrogen atom positions, which is a significantly different structural mechanism than conventional perovskites. Therefore, its ferroelectric characteristics exhibit a high remanent polarization and a tunable coercive field but suffer heavily from leakage currents during the switching event. In this article, we studied epitaxially grown Al0.72Sc0.28N thin films on epitaxial Pt electrode layers deposited on GaN/Al2O3 substrates. The results are compared both structurally and electrically with similar systems on SiO2/Si substrates. Our X-ray diffraction analysis showed that Al0.72Sc0.28N/epi-Pt/GaN is always a complete epitaxial stack without any significant strain gradient. Electrically, this system has an overall lower leakage current and coercive field compared to directly grown, highly crystalline, strained epitaxial Al0.72Sc0.28N/GaN, despite having a lower crystalline quality of the ferroelectric layer. In addition, decreasing the epi-Pt thickness from 100 to 10 nm resulted in further improvement of the leakage profile, which we attribute to a decrease in surface roughness in the thinner Pt. In contrast, the dominant factor of leakage in a fiber-textured system on Si substrates is the Pt(111) texture. Finally, with the combination of in-plane X-ray diffraction and high-resolution scanning transmission electron microscopy, we have demonstrated an all-epitaxial 20 nm Al0.72Sc0.28N/Pt/GaN MFM stack with a sharp interface thickness of less than 1 nm.

Interface-Tuning of Ferroelectricity and Quadruple-Well State in CuInP2S6 via Ferroelectric Oxide

Ferroelectric van der Waals CuInP2S6 possesses intriguing quadruple-well states and negative piezoelectricity. Its technological implementation has been impeded by the relatively low Curie temperature (bulk TC ∼ 42 °C) and the lack of precise domain control. Here we show that CuInP2S6 can be immune to the finite size effect and exhibits enhanced ferroelectricity, piezoelectricity, and polar alignment in the ultrathin limit when it is interfaced with ferroelectric oxide PbZr0.2Ti0.8O3 films. Piezoresponse force microscopy studies reveal that the polar domains in thin CuInP2S6 fully conform to those of the underlying PbZr0.2Ti0.8O3, where the piezoelectric coefficient changes sign and increases sharply with reducing thickness. High temperature in situ domain imaging points to a significantly enhanced TC of >200 °C for 13 nm CuInP2S6 on PbZr0.2Ti0.8O3. Density functional theory modeling and Monte Carlo simulations show that the enhanced polar alignment and TC can be attributed to interface-mediated structure distortion in CuInP2S6. Our study provides an effective material strategy to engineer the polar properties of CuInP2S6 for flexible nanoelectronic, optoelectronic, and mechanical applications.

Shear Strain-Induced Two-Dimensional Slip Avalanches in Rhombohedral MoS2

Slip avalanches are ubiquitous phenomena occurring in three-dimensional materials under shear strain, and their study contributes immensely to our understanding of plastic deformation, fragmentation, and earthquakes. So far, little is known about the role of shear strain in two-dimensional (2D) materials. Here we show some evidence of 2D slip avalanches in exfoliated rhombohedral MoS2, triggered by shear strain near the threshold level. Utilizing interfacial polarization in 3R-MoS2, we directly probe the stacking order in multilayer flakes and discover a wide variety of polarization domains with sizes following a power-law distribution. These findings suggest that slip avalanches can occur during the exfoliation of 2D materials, and the stacking orders can be changed via shear strain. Our observation has far-reaching implications for the development of new materials and technologies, where precise control over the atomic structure of these materials is essential for optimizing their properties as well as for our understanding of fundamental physical phenomena.

Solid-Liquid Crystal Biphasic Ferroelectrics with Tunable Biferroelectricity

Ferroelectricity has been separately found in numerous solid and liquid crystal materials since its first discovery in 1920. However, a single material with biferroelectricity existing in both solid and liquid crystal phases is very rare, and the regulation of biferroelectricity has never been studied. Here, solid-liquid crystal biphasic ferroelectrics, cholestanyl 4-X-benzoate (4X-CB, X = Cl, Br, and I), which exhibits biferroelectricity in both the solid and liquid crystal phases, is presented. It is noted that the ferroelectric liquid crystal phase of 4X-CB is a cholesteric one, distinct from the ordinary chiral smectic ferroelectric liquid crystal phase. Moreover, 4X-CB shows solid-solid and solid-liquid crystal phase transitions, of which the transition temperatures gradually increase from Cl to Br to I substitution. The spontaneous polarization (Ps ) of 4X-CB in both solid and liquid crystal phases can also be regulated by different halogen substitutions, where the 4Br-CB has the optimal Ps because of the larger molecular dipole moment. To the authors' knowledge, 4X-CB is the first ferroelectric with tunable biferroelectricity, which offers a feasible case for the performance optimization of solid-liquid crystal biphasic ferroelectrics.

The First Ring Enlargement Induced Large Piezoelectric Response in a Polycrystalline Molecular Ferroelectric

Inorganic ferroelectrics have long dominated research and applications, taking advantage of high piezoelectric performance in bulk polycrystalline ceramic forms. Molecular ferroelectrics have attracted growing interest because of their environmental friendliness, easy processing, lightweight, and good biocompatibility, while realizing the considerable piezoelectricity in their bulk polycrystalline forms remains a great challenge. Herein, for the first time, through ring enlargement, a molecular ferroelectric 1-azabicyclo[3.2.1]octonium perrhenate ([3.2.1-abco]ReO4 ) with a large piezoelectric coefficient d33 up to 118 pC/N in the polycrystalline pellet form is designed, which is higher than that of the parent 1-azabicyclo[2.2.1]heptanium perrhenate ([2.2.1-abch]ReO4 , 90 pC/N) and those of most molecular ferroelectrics in polycrystalline or even single crystal forms. The ring enlargement reduces the molecular strain for easier molecular deformation, which contributes to the higher piezoelectric response in [3.2.1-abco]ReO4 . This work opens up a new avenue for exploring high piezoelectric polycrystalline molecular ferroelectrics with great potential in piezoelectric applications.

Ferroelectric Modulation in Flexible Lead-Free Perovskite Schottky Direct-Current Nanogenerator for Capsule-Like Magnetic Suspension Sensor

Tribovoltaic nanogenerator (TVNG), a promising semiconductor energy technology, displays outstanding advantages such as low matching impedance and continuous direct-current output. However, the lack of controllable and stable performance modulation strategies is still a major bottleneck that impedes further practical applications of TVNG. Herein, by leveraging the ferroelectricity-enhanced mechanism and the control of interfacial energy band bending, we construct a lead-free perovskite-based [3,3-difluorocyclobutylammonium]₂ CuCl₄ ((DF-CBA)₂ CuCl₄ )/Al Schottky junction TVNG. The multiaxial ferroelectricity of (DF-CBA)₂ CuCl₄ enables an excellent surface charge modulating capacity, realizing a high work function regulation of ∼ 0.7 eV and over 15-fold current regulation (from 6 μA to 93 μA) via an electrical poling control. The controllable electrical poling leads to elevated work function difference between Al electrode and (DF-CBA)₂ CuCl₄ compared to traditional semiconductors and halide perovskites, which creates a stronger built-in electric field at the Schottky interface to enhance the electrical output. This TVNG device exhibits outstanding flexibility and long-term stability (> 20000 cycles) that can endure extreme mechanical deformations, and can also be used in a capsule-like magnetic suspension device capable of detecting vibration and weights of different objects as well as harvesting energy from human motions and water waves. This article is protected by copyright. All rights reserved.

Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure

The two-dimensional layered material CuInP₂S₆ (CIPS) has attracted significant research attention due to its nontrivial physical properties, including room-temperature ferroelectricity at the ultrathin limit and substantial ionic conductivity. Despite many efforts to control its ionic conductance and develop electronic devices, such as memristors, improving the stability of these devices remains a challenge. This work presents a highly stable threshold-switching device based on the Cu/CIPS/graphene heterostructure, achieved after a comprehensive investigation of the activation of Cu's ionic conductivity. The device exhibits exceptional threshold-switching performance, including good cycling endurance, a high on/off ratio of up to 10⁴, low operation voltages, and an ultrasmall subthreshold swing of less than 1.8 mV/decade for the resistance-switching process. Through temperature-dependent electrical and Raman spectroscopy measurements, the stable resistive-switching mechanism is interpreted with a drifting and diffusion model of Cu ions under the electric field, rather than the conventional conducting filament mechanism. These results make the layered ferroionic CIPS material a promising candidate for information storage devices, demonstrating a compelling approach to achieving high-performance threshold-switching memristor devices.

Coexistence of Ferroelectricity and Ferromagnetism in Fullerene-Based One-Dimensional Chains

One-dimensional (1D) magnetoelectric multiferroics are promising multifunctional materials for miniaturized sensors, actuators, and memories. However, 1D materials with both ferroelectricity and ferromagnetism are quite rare. Herein, using first-principles calculations, a series of fullerene-based 1D chains, namely U₂ C@C₈₀ -M (M = Cr, Mn, Mo, and Ru) 1D chains with both ferroelectric (FE) and ferromagnetic (FM) properties is designed. Compared to individual U₂ C@I_h (7)-C₈₀ , the spontaneous polarization (Ps) in 1D chains is enhanced by about two to four times owing to the interaction between U₂ C@I_h (7)-C₈₀ fullerene and M (M = Cr, Mn, Mo, and Ru) atoms. Meanwhile, the introduction of transition metal atoms dopes electrons into U's 5f orbitals, leading to numerous intriguing magnetic properties, such as U₂ C@C₈₀ -Cr and U₂ C@C₈₀ -Mo as 1D ferromagnetic semiconductors, U₂ C@C₈₀ -Ru as 1D ferrimagnetic (FiM) semiconductor, and U₂ C@C₈₀ -Mn as 1D antiferromagnetic (AFM) semiconductor. Excitingly, it is found that magnetic ordering and electrical polarization can be modulated independently by linking different transition metal atoms. These findings not only broaden the range of 1D multiferroic materials, but also provide promising candidates for novel electronic and spintronic applications.

Emerging Halide Perovskite Ferroelectrics

Halide perovskites have gained tremendous attention in the past decade owing to their excellent properties in optoelectronics. Recently, a fascinating property, ferroelectricity, has been discovered in halide perovskites and quickly attracted widespread interest. Compared with traditional perovskite oxide ferroelectrics, halide perovskites display natural advantages such as structural softness, low weight, and easy processing, which are highly desirable in applications pursuing miniaturization and flexibility. This review focuses on the current research progress in halide perovskite ferroelectrics, encompassing the emerging materials systems and their potential applications in ferroelectric photovoltaics, self-powered photodetection, and X-ray detection. The main challenges and possible solutions in the future development of halide perovskite ferroelectric materials are also attempted to be pointed out.

Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing

A new approach for the stabilization of the ferroelectric orthorhombic ZrO₂ films is demonstrated through nanosecond laser annealing (NLA) of as-deposited Si/SiO_x /W(14 nm)/ZrO₂ (8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL multiphysics simulations. The films annealed under the optimized conditions reveal the presence of the orthorhombic phase, as confirmed by X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Macroscopic polarization-electric field hysteresis loops show ferroelectric behavior, with saturation polarization of 12.8 µC cm^-2 , remnant polarization of 12.7 µC cm^-2 and coercive field of 1.2 MV cm^-1 . The films exhibit a wake-up effect that is attributed to the migration of point defects, such as oxygen vacancies, and/or a transition from nonferroelectric (monoclinic and tetragonal phase) to the ferroelectric orthorhombic phase. The capacitors demonstrate a stable polarization with an endurance of 6.0 × 10⁵ cycles, demonstrating the potential of the NLA process for the fabrication of ferroelectric memory devices with high polarization, low coercive field, and high cycling stability.

Ferroelectricity in Niobium Oxide Dihalides NbOX2 (X = Cl, I): A Macroscopic- to Microscopic-Scale Study

2D materials with ferroelectric and piezoelectric properties are of interest for energy harvesting, memory storage and electromechanical systems. Here, we present a systematic study of the ferroelectric properties in NbOX₂ (X = Cl, I) across different spatial scales. The in-plane ferroelectricity in NbOX₂ was investigated using transport and piezoresponse force microscopy (PFM) measurements, where it was observed that NbOCl₂ has a stronger ferroelectric order than NbOI₂. A high local field, exerted by both PFM and scanning tunneling microscopy (STM) tips, was found to induce 1D collinear ferroelectric strips in NbOCl₂. STM imaging reveals the unreconstructed atomic structures of NbOX₂ surfaces, and scanning tunneling spectroscopy was used to probe the electronic states induced at defect (vacancy) sites.

Fluorination Enables Dual Ferroelectricity in Both Solid- and Liquid-Crystal Phases

Ferroelectric materials are a special type of polar substances, including solids or liquid crystals. However, obtaining a material to be ferroelectric in both its solid crystal (SC) and liquid crystal (LC) phases is a great challenge. Moreover, although cholesteric LCs inherently possess the advantage of high fluidity, their ferroelectricity remains unknown. Here, through the reasonable H/F substitution on the fourth position of the phenyl group of the parent nonferroelectric dihydrocholesteryl benzoate, we designed ferroelectric dihydrocholesteryl 4-fluorobenzoate (4-F-BDC), which shows ferroelectricity in both SC and cholesteric LC phases. The fluorination induces a lower symmetric polar P1 space group and a new solid-to-solid phase transition in 4-F-BDC. Beneficial from fluorination, the SC and cholesteric LC phases of 4-F-BDC show clear ferroelectricity, as confirmed by well-shaped polarization-voltage hysteresis loops. The dual ferroelectricity in both SC and cholesteric LC phases of a single material was rarely found. This work offers a viable case for the exploration of the interplay between ferroelectric SC and LC phases and provides an efficient approach for designing ferroelectrics with dual ferroelectricity and cholesteric ferroelectric liquid crystals.

Magneto-optical Kerr Effect in Ferroelectric Antiferromagnetic Two-Dimensional Heterostructures

We studied the magneto-optical Kerr effect (MOKE) of two-dimensional (2D) heterostructure CrI₃/In₂Se₃/CrI₃ using density functional theory calculations and symmetry analysis. The spontaneous polarization in the In₂Se₃ ferroelectric layer and the antiferromagnetic ordering in CrI₃ layers break the mirror and the time-reversal symmetry, thus activating MOKE. We show that the Kerr angle can be reversed by either the polarization or the antiferromagnetic order parameter. Our results suggest that ferroelectric and antiferromagnetic 2D heterostructures could be exploited for ultracompact information storage devices, where the information is encoded by the two ferroelectric or the two time-reversed antiferromagnetic states and the read-out is performed optically by MOKE.

Polarization Switching and Correlated Phase Transitions in Fluorite-Structure ZrO2 Nanocrystals

Unconventional ferroelectricity in fluorite-structure oxides enables tremendous opportunities in nanoelectronics owing to their superior scalability and silicon compatibility. However, their polarization order and switching process remain elusive due to the challenges of visualizing oxygen ions in nanocrystalline films. In this work, the oxygen shifting during polarization switching and correlated polar-nonpolar phase transitions are directly captured among multiple metastable phases in freestanding ZrO₂ thin films by low-dose integrated differential phase-contrast scanning transmission electron microscopy (iDPC-STEM). Bidirectional transitions between antiferroelectric and ferroelectric orders and interfacial polarization relaxation are clarified at unit-cell scale. Meanwhile, polarization switching is strongly correlated with Zr-O displacement in reversible martensitic transformation between monoclinic and orthorhombic phases and two-step tetrahedral-to-orthorhombic phase transition. These findings provide atomic insights into the transition pathways between metastable polymorphs and unravel the evolution of polarization orders in (anti)ferroelectric fluorite oxides.

Review on Resistive Switching Devices Based on Multiferroic BiFeO3

This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO₃ (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and corresponding crystal types responsible for RS behaviors in BFO-based memristive devices are analyzed. The physical mechanisms underlying RS in BFO-based memristive devices, i.e., ferroelectricity and valence change memory, are thoroughly reviewed, and the impact of various effects such as the doping effect, especially in the BFO layer, is evaluated. Finally, this review provides the applications of BFO devices and discusses the valid criteria for evaluating the energy consumption in RS and potential optimization techniques for memristive devices.

Multistage SrBaTiO3 /PDMS Composite Film-Based Hybrid Nanogenerator for Efficient Floor Energy Harvesting Applications

Triboelectric nanogenerators are an emerging energy-scavenging technology that can harvest kinetic energy from various mechanical moments into electricity. The energy generated while humans walk is the most commonly available biomechanical energy. Herein, a multistage consecutively-connected hybrid nanogenerator (HNG) is fabricated and combined with a flooring system (MCHCFS) to efficiently harvest mechanical energy while humans walk. Initially, the electrical output performance of the HNG is optimized by fabricating a prototype device using various strontium-doped barium titanate (Ba_{1- x} Sr_x TiO₃ , BST) microparticles loaded polydimethylsiloxane (PDMS) composite films. The BST/PDMS composite film acts as a negative triboelectric layer that operates against aluminum. Single HNG operated in contact-separation mode could generate an electrical output of ≈280 V, ≈8.5 µA, and ≈90 µC m^-2 . The stability and robustness of the fabricated HNG are confirmed and eight similar HNGs are assembled in a 3D-printed MCHCFS. The MCHCFS is specifically designed to distribute applied force on the single HNG to four nearby HNGs. The MCHCFS can be implemented in real-life floors with an enlarged surface area to harvest energy generated while humans walk into direct current electrical output. The MCHCFS is demonstrated as a touch sensor that can be utilized in sustainable path lighting to save enormous electricity waste.

Charge Separation in BaTiO3 Nanocrystals: Spontaneous Polarization Versus Point Defect Chemistry

The fate of photogenerated charges within ferroelectric metal oxides is key for photocatalytic applications. The authors study the contributions of i) tetragonal distortion, responsible for spontaneous polarization, and ii) point defects, on charge separation and recombination within BaTiO₃ (BTO) nanocrystals of cubic and tetragonal structure. Electron paramagnetic resonance (EPR) in combination with O₂ photoadsorption experiments show that BTO nanocrystals annealed at 600 °C have a charge separation yield enhanced by a factor > 10 compared to TiO₂ anatase nanocrystals of similar geometries. This demonstrates for the first time the beneficial effect of the BTO perovskite nanocrystal lattice on charge separation. Strikingly, charge separation is considerably hindered within BTO nanoparticles annealed ≥ 600 °C, due to the formation of Ba-O divacancies that act as charge recombination centers. The opposing interplay between tetragonal distortion and annealing-induced defect formation inside the lattice highlights the importance of defect engineering within perovskite nanoparticles.

Orbital distortion and electric field control of sliding ferroelectricity in a boron nitride bilayer

Recent experiments confirm that two-dimensional boron nitride (BN) films possess room-temperature out-of-plane ferroelectricity when each BN layer is sliding with respect to each other. This ferroelectricity is attributed to the interlayered orbital hybridization or interlayer charge transfer in previous work. In this work, we attempt to understand the sliding ferroelectricity from the perspective of orbital distortion of long-pair electrons. Using the maximally localized Wannier function method and first-principles calculations, the out-of-planep_zorbitals of BN are investigated. Our results indicate that the interlayer van der Waals interaction causes the distortion of the Np_zorbitals. Based on the picture of out-of-plane orbital distortion, we propose a possible mechanism to tune the ferroelectric polarization by external fields, including electric field and stress field. It is found that both the polarization intensity and direction can be modulated under the electric field. The polarization intensity of the system can also be controlled by stress field perpendicular to the plane. This study will provide theoretical help in the device design based on sliding ferroelectrics.

Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films

It is commonly believed that the impact of the top electrodes on the ferroelectricity of hafnium-based thin films is due to strain engineering. However, several anomalies have occurred that put existing theories in doubt. This work carries out a detailed study of this issue using both theoretical and experimental approaches. The 10 nm Hf_0.5Zr_0.5O₂ (HZO) films are prepared by atomic layer deposition, and three different top capping electrodes (W/MO/ITO) are deposited by physical vapor deposition. The electrical testing finds that the strain does not completely control the ferroelectricity of the devices. The results of further piezoelectric force microscopy characterization exclude the potential interference of the top capping electrodes and interface for electrical testing. In addition, through atomic force microscopy characterization and statistical analysis, a strong correlation between the grain size of the top electrode and the grain size of the HZO film has been found, suggesting that the grain size of the top electrode can induce the formation of the grain size in HZO thin films. Finally, the first-principles calculation is carried out to understand the impact of the strain and grain size on the ferroelectric properties of HZO films. The results show that the strain is the dominant factor for ferroelectricity when the grain size is large (>10 nm). However, when the grain size becomes thinner (<10 nm), the regulation effect of grain sizes increases significantly, which could bring a series of benefits for device scaling, such as device-to-device variations, film uniformity, and domain switch consistency. This work not only completes the understanding of ferroelectricity through top electrode modulation but also provides strong support for the precise regulation of ferroelectricity of nanoscale devices and ultrathin HZO ferroelectric films.

Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor

In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed and analyzed using technology computer-aided design (TCAD) Sentaurus simulation software. By inserting a ferroelectric film into the polarity gate, the electrons and holes are induced in an intrinsic silicon film to create the p-source and the n-drain regions, respectively. Device performance is largely independent of the chemical doping profile, potentially freeing it from issues related to abrupt junctions, dopant variability, and solid solubility. An improved ON-state current and I_ON/I_OFF ratio have been demonstrated in a 3D-calibrated simulation, and the Fe-ED NSTFET's on-state current has increased significantly. According to our study, Fe-ED can be used in versatile reconfigurable nanoscale transistors as well as highly integrated circuits as an effective doping strategy.

Atomic Origins of Enhanced Ferroelectricity in Nanocolumnar PbTiO3 /PbO Composite Thin Films

Nanocomposite films hold great promise for multifunctional devices by integrating different functionalities within a single film. The microstructure of the precipitate/secondary phase is an essential element in designing composites' properties. The interphase strain between the matrix and secondary phase is responsible for strain-mediated functionalities, such as magnetoelectric coupling and ferroelectricity. However, a quantitative microstructure-dependent interphase strain characterization has been scarcely studied. Here, it is demonstrated that the PbTiO₃ (PTO)/PbO composite system can be prepared in nano-spherical and nanocolumnar configurations by tuning the misfit strain, confirmed by a three-dimensional reconstructive microscopy technique. With the atomic resolution quantitative microscopy with a depth resolution of a few nanometers, it is discovered that the strained region in PTO is much larger and more uniform in nanocolumnar compared to nano-spherical composites, resulting in much enhanced ferroelectric properties. The interphase strain between PbO and PTO in the nanocolumnar structure leads to a giant c/a ratio of 1.20 (bulk value of 1.06), accompanied by a Ti polarization displacement of 0.48 Å and an effective ferroelectric polarization of 241.7 µC cm^-2 , three times compared to the bulk value. The quantitative atomic-scale strain and polarization analysis on the interphase strain provides an important guideline for designing ferroelectric nanocomposites.

Shape-Tunable BaTiO3 Crystals Presenting Facet-Dependent Optical and Piezoelectric Properties

BaTiO₃ octahedra, edge-, and corner-truncated cubes, and cubes with four tunable sizes from 132 to 438 nm are synthesized by a solvothermal growth approach. Acetic acid treatment can cleanly remove BaCO₃ impurity. Rietveld refinement of X-ray diffraction patterns and Raman spectra help to confirm the particles have a tetragonal crystal structure. The crystals also exhibit size- and facet-dependent bandgap shifts. BaTiO₃ octahedra show larger piezoelectric, ferroelectric, and pyroelectric effects than truncated cubes and cubes. The measured dielectric constant differences should be associated with their various facet-dependent behaviors. Piezoelectric nanogenerators fabricated from BaTiO₃ octahedra consistently show the best performance than those containing truncated cubes and cubes. In particular, a nanogenerator with 30 wt.%-incorporated octahedra displays an open-circuit voltage of 23 V and short-circuit current of 324 nA. The device performance is also highly stable. The maximum output power reaches 3.9 µW at 60 MΩ. The fabricated nanogenerator can provide sufficient electricity to power light-emitting diodes. This work further demonstrates that various physical properties of semiconductor crystals show surface dependence.

Real-Space Infrared Spectroscopy of Ferroelectric Domain Walls in Multiferroic h-(Lu,Sc)FeO3

We employ synchrotron-based near-field infrared spectroscopy to image the phononic properties of ferroelectric domain walls in hexagonal (h) Lu_0.6Sc_0.4FeO₃, and we compare our findings with a detailed symmetry analysis, lattice dynamics calculations, and prior models of domain-wall structure. Rather than metallic and atomically thin as observed in the rare-earth manganites, ferroelectric walls in h-Lu_0.6Sc_0.4FeO₃ are broad and semiconducting, a finding that we attribute to the presence of an A-site substitution-induced intermediate phase that reduces strain and renders the interior of the domain wall nonpolar. Mixed Lu/Sc occupation on the A site also provides compositional heterogeneity over micron-sized length scales, and we leverage the fact that Lu and Sc cluster in different ratios to demonstrate that the spectral characteristics at the wall are robust even in different compositional regimes. This work opens the door to broadband imaging of physical and chemical heterogeneity in ferroics and represents an important step toward revealing the rich properties of these flexible defect states.

Optical and Electrophysical Properties of Vinylidene Fluoride/Hexafluoropropylene Ferroelectric Copolymer Films: Effect of Doping with Porphyrin Derivatives

Polymer films doped by different porphyrins, obtained by crystallization from the acetone solutions, differ in absorption and fluorescence spectra, which we attribute to the differences in the structuring and composition of the rotational isomers in the polymer chains. According to the infrared spectroscopy data, the crystallization of the films doped with tetraphenylporphyrin (TPP) proceeds in a mixture of α- and γ-phases with TGTG^- and T₃GT₃G^- conformations, respectively. Three bonds in the planar zigzag conformation ensures the contact of such segments with the active groups of the porphyrin macrocycle, significantly changing its electronic state. Structuring of the films in the presence of TPP leads to an increase in the low-voltage AC-conductivity and the registration of an intense Maxwell-Wagner polarization. An increased conductivity by an order of magnitude in TPP-doped films was also observed at high-voltage polarization. The introduction of TPP during the film formation promotes the displacement of the chemical attachment defects of "head-to-head" type in the monomeric units into the surface. This process is accompanied by a significant increase in the film surface roughness, which was registered by piezo-force microscopy. The latter method also revealed the appearance of hysteresis phenomena during the local piezoelectric coefficient d₃₃ measurements.

Polarity Modulation Induced High Electrostrain Performance with Near-Zero Hysteresis in a (Sr0.7Bi0.2□0.1)TiO3-Based System

High-precision piezo actuators necessitate dielectrics with high electrostrain performance with low hysteresis. Polarity-modulated (Sr_0.7Bi_0.2□0.1)TiO₃-based ceramics exhibit extraordinarily discrete multiphase coexistence regions: (i) the relaxor phase coexistence (RPC) region with local weakly polar tetragonal (T) and pseudocubic (Pc) short-range polar nanodomains and (ii) the ferroelectric phase coexistence (FPC) region with T long-range domains and Pc nanodomains. The RPC composition features a specially high and pure electrostrain performance with near-zero hysteresis (S ∼ 0.185%, Q₃₃ ∼ 0.038 m⁴·C^-2), which is double those of conventional Pb(Mg_1/3Nb_2/3)O₃-based ceramics. Particular interest is paid to the RPC and FPC with multiscale characterization to unravel local structure-performance relationships. Guided by piezoelectric force microscopy, scanning transmission electron microscopy, and phase-field simulations, the RPC composition with multiphase low-angle weakly polar nanodomains shows local structural heterogeneity and contributes to a flat local free energy profile and thus to nanodomain switching and superior electrostrain performance, in contrast to the FPC composition with a macroscopic domain that shows stark hysteresis. This work provides a paradigm to design high-precision actuator materials with large electrostrain and ultralow hysteresis, extending our knowledge of multiphase coexistence species in ferroelectrics.

Nonvolatile Electrical Valley Manipulation in WS2 by Ferroelectric Gating

Valleytronics in transition metal dichalcogenides has been intensively investigated for potential applications in next-generation information storage, data processing, and signal transmission devices. Here a ferroelectric gating approach is engaged in achieving nonvolatile electrical tuning of the valley-excitonic properties of monolayer and bilayer WS₂. The gating effects include carrier doping and ferroelectric coupling, which are further distinguished by comparing two geometries where the gate electrodes are in direct contact with or insulated from the WS₂ crystal. The results show that the carrier doping from gate electrodes acts on WS₂ through carrier screening, which only moderately alters the valley polarization. In contrast, the ferroelectric gating promotes electron-phonon interaction, introduces a strong surface polarization field, and controls the interfacial charge trapping/detrapping, causing a Stark shift in exciton energy and strongly enhancing room-temperature valley polarization. In bilayer WS₂, the intralayer-interlayer exciton transition is further induced, contributing to even higher valley polarization. The ferroelectric coupling effect can still be maintained after the removal of gate voltage, showing its nonvolatile nature. The role of ferroelectricity is further verified by the anomalous temperature dependence in valley polarization. This work has revealed effective electrical control over valley excitons in semiconductors through interaction with ferroelectric materials. The reported high room-temperature valley polarization in WS₂ will boost the development of valleytronics devices.